CN115961336A - Single crystal furnace and secondary feeding method - Google Patents
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- 239000013078 crystal Substances 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 18
- 230000007246 mechanism Effects 0.000 claims abstract description 16
- 230000002093 peripheral effect Effects 0.000 claims abstract description 15
- 230000005540 biological transmission Effects 0.000 claims description 39
- 230000033001 locomotion Effects 0.000 claims description 17
- 238000009434 installation Methods 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
Description
技术领域technical field
本发明涉及拉晶技术领域,尤其涉及一种单晶炉及二次加料方法。The invention relates to the technical field of crystal pulling, in particular to a single crystal furnace and a secondary feeding method.
背景技术Background technique
单晶炉是生产单晶硅棒的专业设备。传统生产过程中,多晶硅原料一次性装入石英坩埚内熔化进行生产。单晶硅棒的有效质量受最大投料量限制,最大投料量是由石英坩埚的尺寸决定的,石英坩埚装满的块状硅料重量,即为最大投料量。在硅料熔化过程中,块状固体硅变成液体,料块间缝隙所占用的空间得到释放,一次性投料不能做到足量投料,在一定程度上减少了最大投料量,坩埚利用率不高。因此,二次加料技术得到广泛应用,可提高坩埚利用率,降低成本。Single crystal furnace is a professional equipment for producing single crystal silicon rods. In the traditional production process, the polysilicon raw material is put into a quartz crucible once and melted for production. The effective mass of monocrystalline silicon rods is limited by the maximum feeding amount, which is determined by the size of the quartz crucible, and the weight of the bulk silicon material filled with the quartz crucible is the maximum feeding amount. During the melting process of silicon material, the bulk solid silicon becomes liquid, and the space occupied by the gaps between the material blocks is released. The one-time feeding cannot achieve a sufficient amount of feeding, which reduces the maximum feeding amount to a certain extent, and the utilization rate of the crucible is not good. high. Therefore, the secondary charging technology is widely used, which can improve the utilization rate of the crucible and reduce the cost.
在相关技术中,广泛使用一种典型二次加料系统通过加料管实现。加料管主要由导向装置、管体、中心钼杆和锥形底座组成;中心钼杆顶部可与单晶炉提拉头连接,底部通过螺丝与锥形底座连接,中心钼杆穿过管体与导向装置,管体底部与锥形底座闭合便形成可储存硅料的空间。加料管需要借助单晶炉内相应位置的挡块进行定位与限位,然后降落提拉头,锥形底座与管体逐渐分离,硅料落下,实现加料。In the related art, a typical secondary feeding system through a feeding pipe is widely used. The feeding tube is mainly composed of a guide device, a tube body, a central molybdenum rod and a conical base; the top of the central molybdenum rod can be connected to the lifting head of the single crystal furnace, the bottom is connected to the conical base through screws, and the central molybdenum rod passes through the tube body and The guide device, the bottom of the tube body and the conical base are closed to form a space for storing silicon materials. The feeding tube needs to be positioned and limited by the stopper at the corresponding position in the single crystal furnace, and then the lifting head is lowered, the conical base is gradually separated from the tube body, and the silicon material falls to realize feeding.
但是,常规的加料方式存在一定局限性:用于对加料管进行定位和限位的挡块是不能移动的,随着加料的进行,硅液面会上升而距离加料管越来越近,飞溅与高温对加料管有所损伤,因此只能减少加料量;若需要增加加料量,则要提高挡块的高度,这样又不可避免在加料初期溶液飞溅更为严重,会有损伤加热器与热场的风险,也会减少导流筒的使用寿命。However, there are certain limitations in the conventional feeding method: the stopper used for positioning and limiting the feeding tube cannot be moved. As the feeding progresses, the silicon liquid level will rise and get closer to the feeding tube, causing splash The high temperature will damage the feeding pipe, so the feeding amount can only be reduced; if the feeding amount needs to be increased, the height of the stopper should be increased, so that it is inevitable that the solution splash will be more serious at the initial stage of feeding, and the heater and heat will be damaged. The risk of the field will also reduce the service life of the guide tube.
在一些技术中设计了伸缩式石英加料装置,可以实现加料管的移动,但是该方案需重新设计加料管,加料管的结构更为复杂,更换与维护成本更高,整体结构径向尺寸太大,在细长的炉室中不易实施等,且不能实时进行调节,需要将加料管取出才能进行调节,也存在一定局限性。In some technologies, a telescopic quartz feeding device is designed, which can realize the movement of the feeding pipe, but this solution needs to redesign the feeding pipe, the structure of the feeding pipe is more complicated, the cost of replacement and maintenance is higher, and the radial dimension of the overall structure is too large , it is not easy to implement in the slender furnace chamber, and it cannot be adjusted in real time. It is necessary to take out the feeding pipe to adjust, and there are certain limitations.
发明内容Contents of the invention
本公开实施例提供了一种单晶炉及二次加料方法,能够在加料管的加料过程中灵活调整加料管的高度。Embodiments of the present disclosure provide a single crystal furnace and a secondary charging method, which can flexibly adjust the height of the feeding tube during the charging process of the feeding tube.
本发明所提供的技术方案如下:The technical scheme provided by the present invention is as follows:
一种单晶炉,包括:A single crystal furnace, comprising:
炉体,其包括炉室;及the furnace body, which includes the furnace chamber; and
至少一组挡块机构,每组所述挡块机构包括挡块及升降单元,所述挡块设置在所述炉室的内周壁上,且所述挡块连接至所述升降单元上,并在所述升降单元驱动下能够沿所述炉室轴向移动。At least one set of stopper mechanisms, each set of stopper mechanisms includes a stopper and a lifting unit, the stoppers are arranged on the inner peripheral wall of the furnace chamber, and the stoppers are connected to the lifting unit, and Driven by the lifting unit, it can move axially along the furnace chamber.
示例性的,所述挡块机构至少有两组,至少两组所述挡块机构沿所述炉室的内周壁周向分布。Exemplarily, there are at least two groups of stopper mechanisms, and at least two groups of stopper mechanisms are distributed along the inner peripheral wall of the furnace chamber.
示例性的,所述炉室的内周壁上设有沿所述炉室轴向延伸的滑槽,所述炉室的侧壁内部还设有与所述滑槽相通的安装腔,所述炉室侧壁上还设有径向贯通所述安装腔及所述炉室的外周壁的径向通道;Exemplarily, the inner peripheral wall of the furnace chamber is provided with a chute extending axially along the furnace chamber, and the inside of the side wall of the furnace chamber is also provided with an installation cavity communicating with the chute. The side wall of the chamber is also provided with a radial channel radially penetrating the outer peripheral wall of the installation cavity and the furnace chamber;
其中,所述升降单元包括传动组件和驱动组件,所述挡块对应所述滑槽设置,所述驱动组件至少部分暴露至所述炉室外、且经由所述径向通道连接至所述传动组件,所述传动组件安装至所述安装腔内、且经由所述滑槽连接所述挡块,所述驱动组件通过所述传动组件驱动所述挡块沿所述炉室轴向移动。Wherein, the lifting unit includes a transmission assembly and a drive assembly, the stopper is arranged corresponding to the chute, the drive assembly is at least partially exposed to the furnace chamber, and is connected to the transmission assembly through the radial channel , the transmission assembly is installed in the installation cavity and connected to the stopper through the chute, and the drive assembly drives the stopper to move axially along the furnace chamber through the transmission assembly.
示例性的,所述传动组件包括丝杠组,所述丝杠组包括:Exemplarily, the transmission assembly includes a lead screw set, and the lead screw set includes:
沿所述炉室轴向设置的丝杠,所述丝杠具有沿其自身轴向相对的第一端和第二端;及a lead screw disposed axially along the furnace chamber, the lead screw having a first end and a second end axially opposite to each other; and
滑块,所述滑块连接至所述丝杠上,且能够随所述丝杠旋转而沿所述丝杠运动;a slider, the slider is connected to the lead screw and can move along the lead screw as the lead screw rotates;
其中,所述驱动组件直接或间接连接至所述丝杠上以驱动所述丝杠旋转,所述挡块连接至所述滑块上以与所述滑块同步运动。Wherein, the driving assembly is directly or indirectly connected to the lead screw to drive the lead screw to rotate, and the stopper is connected to the slider to move synchronously with the slider.
示例性的,所述驱动组件包括转轴和驱动件,所述转轴沿所述炉室径向延伸且穿设于所述径向通道内,所述转轴具有沿其自身轴向相对的第三端和第四端,所述第三端置于所述安装腔内,所述第四端伸至所述炉体的外周壁外侧,所述第四端连接所述驱动件;Exemplarily, the drive assembly includes a rotating shaft and a driving member, the rotating shaft extends radially along the furnace chamber and passes through the radial channel, the rotating shaft has a third end opposite to the axial direction of itself and a fourth end, the third end is placed in the installation cavity, the fourth end extends to the outside of the outer peripheral wall of the furnace body, and the fourth end is connected to the driving member;
所述传动组件还包括:锥齿传动组,所述锥齿传动组连接所述丝杠的所述第二端与所述转轴的所述第三端,用于将所述转轴的绕自身轴线旋转运动转换为所述丝杠的绕自身轴线旋转运动。The transmission assembly also includes: a bevel gear transmission group, the bevel gear transmission group connects the second end of the lead screw and the third end of the rotating shaft, and is used to rotate the rotating shaft around its own axis. The rotational movement is converted into a rotational movement of the lead screw about its own axis.
示例性的,所述驱动件包括手轮或驱动电机。Exemplarily, the driving member includes a hand wheel or a driving motor.
示例性的,所述锥齿传动组包括:Exemplarily, the bevel gear transmission group includes:
第一锥齿轮,所述第一锥齿轮同轴连接至所述丝杠的所述第二端;a first bevel gear coaxially connected to the second end of the lead screw;
第二锥齿轮,所述第二锥齿轮同轴连接至所述转轴的所述第三端;a second bevel gear coaxially connected to the third end of the shaft;
其中,所述第一锥齿轮与所述第二锥齿轮的锥面齿轮彼此啮合。Wherein, the bevel gears of the first bevel gear and the second bevel gear mesh with each other.
示例性的,所述第一锥齿轮的齿轮外径尺寸小于或等于所述第二锥齿轮的齿轮外径尺寸。Exemplarily, the gear outer diameter of the first bevel gear is smaller than or equal to the gear outer diameter of the second bevel gear.
示例性的,所述安装腔包括沿所述炉室轴向延伸的第一腔室和与所述第一腔室分隔开的第二腔室,其中所述第一腔室与所述滑槽相通,所述丝杠组安装至所述滑槽内,所述丝杠的第二端自所述第一腔室延伸至所述第二腔室,所述转轴的第三端自所述炉室外延伸至所述第二腔室,所述锥齿传动组安装至所述第二腔室。Exemplarily, the installation chamber includes a first chamber extending axially along the furnace chamber and a second chamber separated from the first chamber, wherein the first chamber is connected to the slide The grooves are connected, the screw group is installed in the sliding groove, the second end of the screw extends from the first chamber to the second chamber, and the third end of the rotating shaft extends from the The furnace outside extends to the second chamber, and the bevel gear transmission group is installed to the second chamber.
一种单晶炉的二次加料方法,应用于如上所述的单晶炉,所述方法包括如下步骤:A method for secondary charging of a single crystal furnace, applied to the above single crystal furnace, said method comprising the following steps:
在通过加料管向单晶炉内二次加料过程中,通过所述挡块来对所述加料管进行定位及限位,且根据预定规则沿所述炉室轴向方向上移动所述挡块,以调节所述加料管与所述炉室内的坩埚在该炉室轴向上的相对距离。During the secondary feeding process into the single crystal furnace through the feeding pipe, the feeding pipe is positioned and limited by the stopper, and the stopper is moved along the axial direction of the furnace chamber according to predetermined rules , to adjust the relative distance between the feeding pipe and the crucible in the furnace chamber in the axial direction of the furnace chamber.
本公开实施例所带来的有益效果如下:The beneficial effects brought by the embodiments of the present disclosure are as follows:
上述方案中,将单晶炉内用于对加料管进行定位及限位的挡块设计为可沿炉室轴向自由移动的结构,这样,挡块由于其沿炉室轴向可自由移动,因此加料管与坩埚液面距离可调节,从而可保证每次加料量足够,也能够保证加热器、热场及加料管的安全;并且,由于加料管与液面距离可根据实际情况进行调节,可更好应对各种突发状况,保证设备安全;此外,仅需对挡块进行结构改进实现其升降目的,结构简单,操作便捷;此外,拉制多根晶棒时,可直接调节挡块高度,拉制单根与多根自由切换,不受其他外部因素限制。综合上述,宏观上,提高了单晶炉在单个周期内的产量、石英坩埚的利用率,降低了制备单晶的制造成本。In the above scheme, the stopper used for positioning and limiting the feeding tube in the single crystal furnace is designed as a structure that can move freely along the furnace chamber axis. In this way, since the stopper can move freely along the furnace chamber axis, Therefore, the distance between the feeding pipe and the liquid surface of the crucible can be adjusted, so as to ensure that the feeding amount is sufficient each time, and also ensure the safety of the heater, thermal field and feeding pipe; moreover, since the distance between the feeding pipe and the liquid surface can be adjusted according to the actual situation, It can better cope with various emergencies and ensure the safety of the equipment; in addition, it only needs to improve the structure of the stopper to achieve its lifting purpose, the structure is simple and the operation is convenient; in addition, when pulling multiple ingots, the stopper can be directly adjusted Height, free to switch between single and multiple pulls, not limited by other external factors. Based on the above, macroscopically, the output of single crystal furnace in a single cycle and the utilization rate of quartz crucible are improved, and the manufacturing cost of preparing single crystal is reduced.
附图说明Description of drawings
图1表示本公开实施例中的单晶炉的外观图;Figure 1 shows the appearance of a single crystal furnace in an embodiment of the present disclosure;
图2表示本公开实施例中的单晶炉的剖视图;Figure 2 shows a cross-sectional view of a single crystal furnace in an embodiment of the present disclosure;
图3表示图2中A虚线框的局部结构放大图。Fig. 3 shows an enlarged view of the partial structure of the dotted line box A in Fig. 2 .
具体实施方式Detailed ways
为使本公开实施例的目的、技术方案和优点更加清楚,下面将结合本公开实施例的附图,对本公开实施例的技术方案进行清楚、完整地描述。显然,所描述的实施例是本公开的一部分实施例,而不是全部的实施例。基于所描述的本公开的实施例,本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例,都属于本公开保护的范围。In order to make the purpose, technical solutions and advantages of the embodiments of the present disclosure clearer, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present disclosure. Apparently, the described embodiments are some of the embodiments of the present disclosure, not all of them. Based on the described embodiments of the present disclosure, all other embodiments obtained by persons of ordinary skill in the art without creative effort fall within the protection scope of the present disclosure.
除非另外定义,本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性,而只是用来区分不同的组成部分。同样,“一个”、“一”或者“该”等类似词语也不表示数量限制,而是表示存在至少一个。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同,而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接,而是可以包括电性的连接,不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系,当被描述对象的绝对位置改变后,则该相对位置关系也可能相应地改变。Unless otherwise defined, the technical terms or scientific terms used in the present disclosure shall have the usual meanings understood by those skilled in the art to which the present disclosure belongs. "First", "second" and similar words used in the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Likewise, words like "a", "an" or "the" do not denote a limitation of quantity, but mean that there is at least one. "Comprising" or "comprising" and similar words mean that the elements or items appearing before the word include the elements or items listed after the word and their equivalents, without excluding other elements or items. Words such as "connected" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "Down", "Left", "Right" and so on are only used to indicate the relative positional relationship. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.
如图1至图3所示,本发明实施例所提供的单晶炉包括炉体10及至少一组挡块机构20。所述炉体10包括炉室,所述炉室内可设置有坩埚、坩埚轴、加热器等;As shown in FIGS. 1 to 3 , the single crystal furnace provided by the embodiment of the present invention includes a
每组所述挡块机构20包括挡块21及升降单元22,所述挡块21设置在所述炉室的内周壁上,且所述挡块21连接至所述升降单元22上,并在所述升降单元22驱动下能够沿所述炉室轴向移动。Each set of
上述方案中,将单晶炉内用于对加料管进行定位及限位的挡块21设计为可沿炉室轴向自由移动的结构,这样,挡块21由于其沿炉室轴向可自由移动,因此加料管与坩埚液面距离可调节,从而可保证每次加料量足够,也能够保证加热器、热场及加料管的安全;并且,由于加料管与液面距离可根据实际情况进行调节,可更好应对各种突发状况,保证设备安全;此外,仅需对挡块21进行结构改进实现其升降目的,结构简单,操作便捷;此外,拉制多根晶棒时,可直接调节挡块21高度,拉制单根与多根自由切换,不受其他外部因素限制。综合上述,宏观上,提高了单晶炉在单个周期内的产量、石英坩埚的利用率,降低了制备单晶的制造成本。In the above scheme, the
作为一种示例性的实施例,如图1和图2所示,所述挡块机构20可至少有两组,至少两组所述挡块机构20沿所述炉室的内周壁周向分布。一种更具体实施例中,如图1和图2所示,所述挡块机构20可有两组,两组所述挡块机构20对称设置在炉室径向相对的两侧壁上。当然可以理解的是,对于所述挡块机构20的具体数量不限定,也可以是两组及两组以上。As an exemplary embodiment, as shown in Fig. 1 and Fig. 2, there may be at least two groups of the
作为一些示例性的实施例,如图3所示,所述炉室的内周壁上设有沿所述炉室轴向延伸的滑槽11,所述炉室的侧壁内部还设有与所述滑槽11相通的安装腔12,所述炉室侧壁上还设有径向贯通所述安装腔12及所述炉室的外周壁的径向通道13;其中,所述升降单元22包括传动组件221和驱动组件222,所述挡块21对应所述滑槽11设置,所述驱动组件222至少部分暴露至所述炉室外、且经由所述径向通道13连接至所述传动组件221,所述传动组件221安装至所述安装腔12内、且经由所述滑槽11连接所述挡块21,所述驱动组件222通过所述传动组件221驱动所述挡块21沿所述炉室轴向移动。As some exemplary embodiments, as shown in Figure 3, the inner peripheral wall of the furnace chamber is provided with a
在上述方案中,所述传动组件221作为所述驱动组件222与所述挡块21之间的动力传输部件,其承担着在所述驱动组件222的动力驱动下来带动所述挡块21升降的作用。所述驱动组件222至少部分暴露至所述炉室外,以便于操作人员控制其工作,以随时改变所述挡块21的位置。In the above solution, the
示例性的,如图3所示,所述传动组件221包括丝杠组,所述丝杠组包括:Exemplarily, as shown in FIG. 3 , the
沿所述炉室轴向设置的丝杠2211,所述丝杠2211具有沿其自身轴向相对的第一端和第二端;及A
滑块2212,所述滑块2212连接至所述丝杠2211上,且能够随所述丝杠2211旋转而沿所述丝杠2211运动;a
其中,所述驱动组件222直接或间接连接至所述丝杠2211上以驱动所述丝杠2211旋转,所述挡块21连接至所述滑块2212上以与所述滑块2212同步运动。Wherein, the driving
在上述方案中,所述传动组件221选用丝杠2211组,通过所述丝杠2211上的滑块2212运动,来带动所述挡块21运动,这样的方式,结构简单,且所述挡块21的运动精度较高。In the above solution, the
这里需要说明的是,所述丝杠2211螺旋传动所述滑块2212运动,所述丝杠2211的螺纹生胶需满足自锁条件,以将所述滑块2212可锁定至预期位置上。It should be noted here that the
当然可以理解的是,所述传动组件221可不限于丝杠2211组,还可以是其他任意可实现带动挡块21升降的结构。Of course, it can be understood that the
此外,示例的,如图3所示,所述丝杠组还包括导向杆2213,所述滑块2212可沿所述导向杆2213移动,以提高挡块的运动平稳性。In addition, for example, as shown in FIG. 3 , the lead screw assembly further includes a
此外,示例性的,如图3所示,所述驱动组件222包括转轴2221和驱动件2222,所述转轴2221沿所述炉室径向延伸且穿设于所述径向通道13内,所述转轴2221与所述径向通道13之间设有轴承,以使所述转轴2221可在径向通道13内自由转动,且通过轴承盖密封所述转轴2221与所述径向通道13之间的空隙;所述转轴2221具有沿其自身轴向相对的第三端和第四端,所述第三端置于所述安装腔12内,所述第四端伸至所述炉体10的外周壁外侧,所述第四端连接所述驱动件2222;所述传动组件221还包括:锥齿传动组,所述锥齿传动组连接所述丝杠2211的所述第二端与所述转轴2221的所述第三端,用于将所述转轴2221的绕自身轴线旋转运动转换为所述丝杠2211的绕自身轴线旋转运动。In addition, exemplary, as shown in FIG. 3 , the driving
在上述方案中,所述驱动件2222可驱动所述转轴2221旋转,所述转轴2221轴向被布置为沿炉室径向延伸,而所述丝杠2211轴向沿炉室轴向延伸,因此传动组件221中还采用可传递垂直方向旋转运动的锥齿传动组,实现将径向的转轴2221旋转运动改变为轴向的丝杠2211旋转运动,进而由丝杠2211旋转运动转换为挡块21的轴向直线运动,该锥齿传动组同时也能承受一部分轴向力,通过改变该锥齿传动组的传动比可控制挡块21移动的速度。In the above solution, the driving
示例性的,所述驱动件2222可选用手轮,以实现人工操作;所述驱动件2222也可以选用驱动电机,以实现自动化操作。Exemplarily, the driving
此外,作为一种示例性的实施例,如图3所示,所述锥齿传动组包括:In addition, as an exemplary embodiment, as shown in Figure 3, the bevel gear transmission group includes:
第一锥齿轮223,所述第一锥齿轮223同轴连接至所述丝杠2211的所述第二端;a
第二锥齿轮224,所述第二锥齿轮224同轴连接至所述转轴2221的所述第三端;a
其中,所述第一锥齿轮223与所述第二锥齿轮224的锥面齿轮彼此啮合。Wherein, the bevel gears of the
示例性的,所述第一锥齿轮223的齿轮外径尺寸小于或等于所述第二锥齿轮224的齿轮外径尺寸。采用这样的方案,可以将所述驱动件2222的较大扭矩转换为所述丝杠2211的较小扭矩,从而实现更为精准调节挡块21高度的目的。Exemplarily, the gear outer diameter of the
此外,示例性的,所述安装腔12包括沿所述炉室轴向延伸的第一腔室121和与所述第一腔室121分隔开的第二腔室122,其中所述第一腔室121与所述滑槽11相通,所述丝杠2211组安装至所述滑槽11内,所述丝杠2211的第二端自所述第一腔室121延伸至所述第二腔室122,所述转轴2221的第三端自所述炉室外延伸至所述第二腔室122,所述锥齿传动组安装至所述第二腔室122。采用上述方案,所述第二腔室122可为所述锥齿传动组提供一较为洁净空间,以避免颗粒等杂质污染,提高其使用寿命。In addition, exemplary, the
此外,本公开实施例还提供了一种单晶炉的二次加料方法,应用于本公开实施例中的单晶炉,所述方法包括如下步骤:In addition, the embodiment of the present disclosure also provides a secondary charging method of the single crystal furnace, which is applied to the single crystal furnace in the embodiment of the present disclosure, and the method includes the following steps:
在通过加料管向单晶炉内二次加料过程中,通过所述挡块21来对所述加料管进行定位及限位,且根据预定规则沿所述炉室轴向方向上移动所述挡块21,以调节所述加料管与所述炉室内的坩埚在该炉室轴向上的相对距离。During the secondary charging process through the feeding pipe into the single crystal furnace, the feeding pipe is positioned and limited by the
有以下几点需要说明:The following points need to be explained:
(1)本公开实施例附图只涉及到与本公开实施例涉及到的结构,其他结构可参考通常设计。(1) The drawings of the embodiments of the present disclosure only relate to the structures involved in the embodiments of the present disclosure, and other structures may refer to general designs.
(2)为了清晰起见,在用于描述本公开的实施例的附图中,层或区域的厚度被放大或缩小,即这些附图并非按照实际的比例绘制。可以理解,当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时,该元件可以“直接”位于另一元件“上”或“下”或者可以存在中间元件。(2) For the sake of clarity, in the drawings used to describe the embodiments of the present disclosure, the thicknesses of layers or regions are exaggerated or reduced, that is, the drawings are not drawn in actual scale. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "under" another element, it can be "directly on" or "under" the other element, or Intermediate elements may be present.
(3)在不冲突的情况下,本公开的实施例及实施例中的特征可以相互组合以得到新的实施例。(3) In the case of no conflict, the embodiments of the present disclosure and the features in the embodiments can be combined with each other to obtain new embodiments.
以上,仅为本公开的具体实施方式,但本公开的保护范围并不局限于此,本公开的保护范围应以权利要求的保护范围为准。The above are only specific embodiments of the present disclosure, but the protection scope of the present disclosure is not limited thereto, and the protection scope of the present disclosure should be based on the protection scope of the claims.
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