CN115863506B - Light emitting device, display substrate and display device - Google Patents
Light emitting device, display substrate and display device Download PDFInfo
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- CN115863506B CN115863506B CN202211653911.5A CN202211653911A CN115863506B CN 115863506 B CN115863506 B CN 115863506B CN 202211653911 A CN202211653911 A CN 202211653911A CN 115863506 B CN115863506 B CN 115863506B
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Abstract
The application discloses a light emitting device, a display substrate and a display device. The light emitting device comprises a first semiconductor light emitting layer, a second semiconductor light emitting layer and a first shading layer, wherein the second semiconductor light emitting layer is positioned on the backlight side of the first semiconductor light emitting layer and is staggered and stacked with the first semiconductor light emitting layer, and the first semiconductor light emitting layer and the second semiconductor light emitting layer emit light with different colors; the first shading layer is arranged on the light emitting side of the first semiconductor light emitting layer, and the projection of the first shading layer on the light emitting surface is overlapped with the partial projection of the first semiconductor light emitting layer on the light emitting surface. According to the technical scheme, the first semiconductor light-emitting layer and the second semiconductor light-emitting layer are stacked, so that the occupied plane area after stacking the first semiconductor light-emitting layer and the second semiconductor light-emitting layer is smaller than the sum of the occupied plane areas after tiling the first semiconductor light-emitting layer and the second semiconductor light-emitting layer, the area of the pixel unit can be reduced, more pixel units are arranged, and the resolution is improved.
Description
Technical Field
The present disclosure relates to the field of display technologies, and in particular, to a light emitting device, a display substrate using the light emitting device, and a display apparatus using the display substrate.
Background
The LED display panel based on the semiconductor material has the characteristics of high brightness, long service life, low energy consumption and high response speed. However, in a conventional LED display panel, a plurality of LED light emitting chip arrays are typically mounted on a substrate, and each LED light emitting chip is tiled on the substrate to form sub-pixels of each pixel unit. If higher resolution is required, the size of each pixel needs to be reduced, that is, the size of each LED light emitting chip is reduced, but this may deteriorate the performance of the LED device and make the manufacturing difficult.
Disclosure of Invention
The main purpose of the present application is to provide a light emitting device, which aims to improve the problem that the high resolution effect of a display device is difficult to achieve.
In order to achieve the above object, a light emitting device according to the present application includes a first semiconductor light emitting layer, a second semiconductor light emitting layer, and a first light shielding layer, where the second semiconductor light emitting layer is located at a backlight side of the first semiconductor light emitting layer and is stacked in a staggered manner with the first semiconductor light emitting layer, and the first semiconductor light emitting layer and the second semiconductor light emitting layer emit light with different colors; the first shading layer is arranged on the light emitting side of the first semiconductor light emitting layer, and the projection of the first shading layer on the light emitting surface is overlapped with the partial projection of the first semiconductor light emitting layer on the light emitting surface of the light emitting device.
In an embodiment, the light emitting device further includes a third semiconductor light emitting layer disposed on a backlight side of the second semiconductor light emitting layer, and the light emitting color of the first semiconductor light emitting layer and the light emitting color of the second semiconductor light emitting layer are different from the light emitting color of the third semiconductor light emitting layer; and the first semiconductor light-emitting layer and the second semiconductor light-emitting layer are sequentially staggered and stacked with the third semiconductor light-emitting layer.
In an embodiment, an area of a region of the third semiconductor light emitting layer not covered by the second semiconductor light emitting layer is defined as S1, an area of a region of the second semiconductor light emitting layer not covered by the first semiconductor light emitting layer is defined as S2, and an area of a region of the first semiconductor light emitting layer not covered by the first light shielding layer is defined as S3, s1=s2=s3.
In an embodiment, the first semiconductor light emitting layer, the second semiconductor light emitting layer and the third semiconductor light emitting layer together form a stacked assembly, and the stacked assembly is disposed obliquely with respect to the light emitting surface.
In an embodiment, the light emitting device further includes a third semiconductor light emitting layer, and the light emitting color of the first semiconductor light emitting layer and the light emitting color of the second semiconductor light emitting layer are each different from the light emitting color of the third semiconductor light emitting layer; and the projection of the first semiconductor light-emitting layer on the light-emitting surface and the projection of the second semiconductor light-emitting layer on the light-emitting surface are not overlapped with the projection of the third semiconductor light-emitting layer on the light-emitting surface.
In an embodiment, the third semiconductor light emitting layer is disposed obliquely with respect to the light emitting surface; and/or the first semiconductor light-emitting layer and the second semiconductor light-emitting layer are obliquely arranged relative to the light-emitting surface.
In an embodiment, the light emitting device further includes a second light shielding layer, where the second light shielding layer is located on a light emitting side of the third semiconductor light emitting layer, and a projection of the second light shielding layer on the light emitting surface coincides with a partial projection of the third semiconductor light emitting layer on the light emitting surface.
In an embodiment, the backlight side of the first semiconductor light emitting layer, the backlight side of the second semiconductor light emitting layer and the backlight side of the third semiconductor light emitting layer are provided with reflective films.
The application also provides a display substrate, which comprises a substrate and the light-emitting devices, wherein the substrate is divided into a plurality of pixel areas which are arranged in an array manner, and the light-emitting devices are arranged in each pixel area.
The application also provides a display device, which is characterized by comprising a packaging cover plate and the display substrate, wherein the packaging cover plate is covered on one side of the light-emitting device, which is away from the substrate.
According to the technical scheme, the light-emitting device comprises the first semiconductor light-emitting layer and the second semiconductor light-emitting layer, the two layers of semiconductor light-emitting layers are staggered and stacked, and the emitted light has different colors, so that the occupied planar area after the stacking of the first semiconductor light-emitting layer and the second semiconductor light-emitting layer is smaller than the sum of the occupied planar areas after the stacking of the first semiconductor light-emitting layer and the second semiconductor light-emitting layer, the effect of reducing the area of a pixel unit can be achieved, more pixel units can be arranged in a display device with the same size, the resolution of the display device is improved, and the effect of high resolution is achieved. In addition, through the arrangement of the first semiconductor light-emitting layer and the second semiconductor light-emitting layer, compared with the scheme of the arrangement of the first semiconductor light-emitting layer and the second semiconductor light-emitting layer in a completely stacked mode, the overall size is larger, the overall size of the light-emitting device can be further increased, good light-emitting performance of the light-emitting device is guaranteed, and meanwhile the requirement on machining precision is reduced. In addition, by arranging the first shading layer on the light emitting side of the first semiconductor light emitting layer, and the projection of the first shading layer on the light emitting surface is overlapped with the partial projection of the first semiconductor light emitting layer on the light emitting surface, the area of the light emitting area of the first semiconductor light emitting layer is equivalent to the area of the second semiconductor light emitting layer which is not blocked by the first semiconductor light emitting layer, and further, the light mixing effect can be better.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained from the structures shown in these drawings without inventive effort to a person of ordinary skill in the art.
Fig. 1 is a schematic front view of an example of a light emitting device according to an embodiment of the present application when a first semiconductor light emitting layer, a second semiconductor light emitting layer, and a third semiconductor light emitting layer are stacked in a staggered manner;
fig. 2 is a schematic perspective view illustrating an example of a light emitting device according to an embodiment of the present disclosure when the first semiconductor light emitting layer, the second semiconductor light emitting layer, and the third semiconductor light emitting layer are stacked in a staggered manner;
fig. 3 is a schematic front view of another example of a light emitting device according to the embodiment of the present application when the first semiconductor light emitting layer, the second semiconductor light emitting layer, and the third semiconductor light emitting layer are stacked in a staggered manner;
fig. 4 is a schematic perspective view of another example of a light emitting device according to the embodiment of the present application when the first semiconductor light emitting layer, the second semiconductor light emitting layer, and the third semiconductor light emitting layer are stacked in a staggered manner;
fig. 5 is a schematic structural diagram of an example in which the first semiconductor light emitting layer and the second semiconductor light emitting layer are not overlapped with the projection of the third semiconductor light emitting layer on the light emitting surface in the light emitting device according to the embodiment of the present application;
FIG. 6 is a schematic diagram of a structure in which a second light shielding layer is disposed on the third semiconductor light emitting layer in FIG. 5;
fig. 7 is a schematic structural diagram of another example in which the first semiconductor light emitting layer and the second semiconductor light emitting layer are not overlapped with the projection of the third semiconductor light emitting layer on the light emitting surface in the light emitting device according to the embodiment of the present application;
fig. 8 is a schematic front view of another example of a light emitting device according to an embodiment of the present application, where the first semiconductor light emitting layer and the second semiconductor light emitting layer are not overlapped with the projection of the third semiconductor light emitting layer on the light emitting surface;
fig. 9 is a schematic front view of another example of a light emitting device according to the embodiment of the present application, in which the first semiconductor light emitting layer and the second semiconductor light emitting layer are not overlapped with the projection of the third semiconductor light emitting layer on the light emitting surface;
fig. 10 is a schematic structural view of a light emitting device according to an embodiment of the present disclosure, wherein a reflective film is provided;
FIG. 11 is a schematic front view of an embodiment of a display substrate according to the second embodiment of the present disclosure;
FIG. 12 is a schematic perspective view of an embodiment of a display substrate according to the second embodiment of the present disclosure;
fig. 13 is a schematic front view of an embodiment of a display device according to a third embodiment of the present application.
Reference numerals illustrate:
| reference numerals | Name of the name | Reference numerals | Name of the name |
| 100 | First semiconductor light-emitting layer | 200 | Second semiconductor light emitting layer |
| 300 | A first light shielding layer | 400 | Third semiconductor light-emitting layer |
| 500 | A second light shielding layer | 600 | Reflective film |
| 800 | Substrate | 801 | Pixel area |
| 900 | Packaging cover plate | 10 | Light-emitting surface |
The realization, functional characteristics and advantages of the present application will be further described with reference to the embodiments, referring to the attached drawings.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.
It should be noted that, in the embodiment of the present application, directional indications (such as up, down, left, right, front, and rear … …) are referred to, and the directional indications are merely used to explain the relative positional relationship, movement conditions, and the like between the components in a specific posture (as shown in the drawings), and if the specific posture is changed, the directional indications are correspondingly changed.
In addition, if there is a description of "first", "second", etc. in the embodiments of the present application, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be regarded as not exist and not within the protection scope of the present application.
Embodiment one:
the application proposes a light emitting device.
In the embodiment of the present application, referring to fig. 1 to 9 in combination, the light emitting device includes a first semiconductor light emitting layer 100, a second semiconductor light emitting layer 200 and a first light shielding layer 300, wherein the second semiconductor light emitting layer 200 is located at a backlight side of the first semiconductor light emitting layer 100 and is stacked with the first semiconductor light emitting layer 100 in a staggered manner, and the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200 emit light with different colors; the first light shielding layer 300 is disposed on the light emitting side of the first semiconductor light emitting layer 100, and the projection of the first light shielding layer 300 on the light emitting surface 10 overlaps with the partial projection of the first semiconductor light emitting layer 100 on the light emitting surface 10 of the light emitting device.
In the display panel, a plurality of pixel units are provided, each pixel unit is composed of a plurality of sub-pixel units with different colors, for example, a red pixel unit, a green pixel unit and a blue pixel unit are composed of a pixel unit, wherein the red pixel unit, the green pixel unit and the blue pixel unit are all sub-pixel units in the pixel unit. In the led display panel, each led corresponds to one sub-pixel unit. The colors of light emitted by the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200 of the light emitting device in the present embodiment are different, and the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200 may be regarded as one sub-pixel unit of two different colors, respectively. The first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200 are arranged to be stacked with respect to each other in a staggered manner, i.e., two sub-pixel units are arranged to be stacked with respect to each other.
Compared with the scheme that the first semiconductor light-emitting layer 100 and the second semiconductor light-emitting layer 200 are tiled, in the technical scheme, the first semiconductor light-emitting layer 100 and the second semiconductor light-emitting layer 200 are staggered and stacked, so that when two sub-pixel units are formed, the occupied planar area of the light-emitting device is smaller, the sum of the areas of a plurality of sub-pixels in one pixel area 801 can be reduced, namely the area of each pixel unit is reduced, when the light-emitting device is applied to a display device, the number of the pixel units arranged in the display device is increased, the resolution of the display device is improved, and the effect with high resolution is achieved. In addition, it can be understood that, since the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200 are stacked and arranged, and the two have areas overlapping each other in the direction perpendicular to the plane, the size of the first semiconductor light emitting layer 100 and the size of the second semiconductor light emitting layer 200 in the technical solution of the present application may not be too small, so that the overall size of the light emitting device may not be too small, and thus the light emitting device may have better light emitting performance; meanwhile, the requirement on processing precision in the manufacturing process of the light-emitting device is reduced. Further, by stacking the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200 in a staggered manner, the area of the second semiconductor light emitting layer 200, which is not covered by the first semiconductor light emitting layer 100, can be optionally adjusted as required, and thus the area of the sub-pixel unit and the area of the whole pixel unit can be adjusted, so that the effect of high resolution can be easily achieved.
Specifically, the projected areas of the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200 on the light emitting surface 10 may be equal or unequal. The first semiconductor light emitting layer 100 and the second light emitting layer may be arranged to be offset in only one direction or may be arranged to be offset in both directions at the same time. The light emitting device in the present embodiment may include only the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200, and may further include other semiconductor light emitting layers other than the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200, where the other semiconductor light emitting layers may be stacked with the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200, and may not be stacked with the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200.
It can be understood that when the second semiconductor light emitting layer 200 is disposed on the backlight side of the first semiconductor light emitting layer 100, the first semiconductor light emitting layer 100 blocks a portion of the light emitted by the second semiconductor light emitting layer 200, that is, blocks the light emitted by the area where the projection of the second semiconductor light emitting layer 200 on the light emitting surface 10 coincides with the projection of the first semiconductor light emitting layer 100 on the light emitting surface 10, so that when the first semiconductor light emitting layer 100 uses the same current as the second semiconductor light emitting layer 200, the brightness of the light emitted by the first semiconductor light emitting layer 100 is greater than the brightness of the light emitted by the second semiconductor light emitting layer 200 during display. According to the technical scheme, the first shading layer 300 is arranged on the light emitting side of the first semiconductor light emitting layer 100, so that the first shading layer 300 can shade the brightness of light emitted by the first semiconductor light emitting layer 100, and further the brightness of the light emitted by the first semiconductor light emitting layer 100 is smaller than the brightness of the light emitted by the second semiconductor light emitting layer 200 when the display device applying the light emitting device is used for displaying. Of course, in order to achieve the effect of uniform light display of the respective colors, the current value passing through the first semiconductor light emitting layer 100 may be reduced or the current value passing through the second semiconductor light emitting layer 200 may be increased without increasing the first light shielding layer 300.
According to the technical scheme, the light-emitting device comprises the first semiconductor light-emitting layer 100 and the second semiconductor light-emitting layer 200, the two layers of semiconductor light-emitting layers are staggered and stacked, and the emitted light has different colors, so that the occupied planar area after the first semiconductor light-emitting layer 100 and the second semiconductor light-emitting layer 200 are stacked is smaller than the sum of the occupied planar areas after the first semiconductor light-emitting layer 100 and the second semiconductor light-emitting layer 200 are tiled, the effect of reducing the area of a pixel unit can be achieved, more pixel units can be arranged in a display device with the same size, the resolution of the display device is improved, and the effect of high resolution is achieved. In addition, through the staggered stacking arrangement of the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200, compared with the scheme of completely stacking the first semiconductor light emitting layer and the second semiconductor light emitting layer, the overall size is larger, so that the overall size of the light emitting device can be increased, the good light emitting performance of the light emitting device is ensured, and meanwhile, the requirement on processing precision is reduced. In addition, by providing the first light shielding layer 300 on the light emitting side of the first semiconductor light emitting layer 100, and overlapping the projection of the first light shielding layer 300 on the light emitting surface 10 with the partial projection of the first semiconductor light emitting layer 100 on the light emitting surface 10, the area of the light emitting region of the first semiconductor light emitting layer 100 is equivalent to the area of the region of the second semiconductor light emitting layer 200 not blocked by the first semiconductor light emitting layer 100, and thus the light mixing effect can be better.
As an example, referring to fig. 1 to 4 in combination, the light emitting device further includes a third semiconductor light emitting layer 400 disposed on the backlight side of the second semiconductor light emitting layer 200, and the light emitting color of the first semiconductor light emitting layer 100 and the light emitting color of the second semiconductor light emitting layer 200 are different from the light emitting color of the third semiconductor light emitting layer 400; and the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200 are stacked with the third semiconductor light emitting layer 400 in a staggered manner.
Specifically, the colors of light emitted from the third semiconductor light emitting layer 400, the second semiconductor light emitting layer 200, and the first semiconductor light emitting layer 100 may be red, green, and blue, respectively, so that the light emitted from the three semiconductor light emitting layers may be mixed into light of a plurality of colors. In this example, by stacking the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200 with the third semiconductor light emitting layer 400 in a staggered manner, the overall planar area occupied by the three semiconductor light emitting layers is further smaller than that occupied by the conventional three semiconductor light emitting layers when tiled, so that the area of a single pixel unit can be further reduced, the display device under the same area can be further provided with more pixel units, the resolution of the display device is improved, and the effect of high resolution is achieved.
When the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200 are stacked with the third semiconductor light emitting layer 400 in a staggered manner, it may include: the dislocation direction of the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200 is the same as the dislocation direction of the second semiconductor light emitting layer 200 and the third semiconductor light emitting layer 400; alternatively, the misalignment direction of the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200 and the misalignment direction of the second semiconductor light emitting layer 200 and the third semiconductor light emitting layer 400 are opposite; alternatively, the direction of the dislocation of the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200, the direction of the dislocation of the second semiconductor light emitting layer 200 and the third semiconductor light emitting layer 400 may be perpendicular.
Further, as shown in fig. 2, the area of the region of the third semiconductor light emitting layer 400 not covered by the second semiconductor light emitting layer 200 is defined as S1, the area of the region of the second semiconductor light emitting layer 200 not covered by the first semiconductor light emitting layer 100 is defined as S2, the area of the region of the first semiconductor light emitting layer 100 not covered by the first light shielding layer 300 is defined as S3, s1=s2=s3.
With this arrangement, the luminance of the light emitted from the first semiconductor light emitting layer 100, the luminance of the light emitted from the second semiconductor light emitting layer 200, and the luminance of the light emitted from the third semiconductor light emitting layer 400 are equal to each other when displaying, so that a good light mixing effect can be achieved.
Further, as shown in fig. 3 and 4, the first semiconductor light emitting layer 100, the second semiconductor light emitting layer 200, and the third semiconductor light emitting layer 400 together form a stacked assembly, and the stacked assembly is disposed obliquely with respect to the light emitting surface 10.
By forming the stacked assembly by the first semiconductor light emitting layer 100, the second semiconductor light emitting layer 200 and the third semiconductor light emitting layer 400 together and obliquely setting the stacked assembly relative to the light emitting surface 10, the projection of the stacked assembly on the light emitting surface 10 is further reduced, thereby increasing the number of pixel units in the display device and further realizing the effects of high resolution and high resolution.
As another example, referring to fig. 5 to 9 in combination, the light emitting device further includes a third semiconductor light emitting layer 400, and the light emitting color of the first semiconductor light emitting layer 100 and the light emitting color of the second semiconductor light emitting layer 200 are different from the light emitting color of the third semiconductor light emitting layer 400; and the projection of the first semiconductor light emitting layer 100 on the light emitting surface 10 and the projection of the second semiconductor light emitting layer 200 on the light emitting surface 10 do not overlap with the projection of the third semiconductor light emitting layer 400 on the light emitting surface 10.
Specifically, the colors of light emitted from the third semiconductor light emitting layer 400, the second semiconductor light emitting layer 200, and the first semiconductor light emitting layer 100 may be red, green, and blue, respectively, so that the light emitted from the three semiconductor light emitting layers may be mixed into light of a plurality of colors. In this example, by setting the projection of the first semiconductor light emitting layer 100 on the light emitting surface 10 and the projection of the second semiconductor light emitting layer 200 on the light emitting surface 10 to be not overlapped with the projection of the third semiconductor light emitting layer 400 on the light emitting surface 10, the planar area occupied when the display device is tiled is smaller than that of the conventional three semiconductor light emitting layers, so that the display device under the same area can be provided with more pixel units, the resolution of the display device is improved, and the effect of high resolution is achieved; and the overall size is larger than that of the three semiconductor light-emitting layers when the three semiconductor light-emitting layers are stacked, so that the light-emitting performance of the light-emitting device can be improved, and meanwhile, the requirement on the manufacturing precision of the light-emitting device is reduced.
The third semiconductor light emitting layer 400 may be provided in the same layer as the first semiconductor light emitting layer 100, or may be provided in the same layer as the second semiconductor light emitting layer 200, or may be provided in the same layer as a region between the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200.
Further, referring to fig. 7 to 9, the third semiconductor light emitting layer 400 is disposed obliquely with respect to the light emitting surface 10; and/or, the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200 are disposed obliquely with respect to the light emitting surface 10.
By arranging the third semiconductor light emitting layer 400 obliquely with respect to the light emitting surface 10, the area occupied by the projection of the third semiconductor light emitting layer 400 on the light emitting surface 10 is reduced, so that the size of the light emitting device can be reduced, the number of the light emitting devices can be increased, namely, the number of pixel units can be increased, and the effects of high resolution and high resolution can be realized. Also, by disposing the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200 obliquely with respect to the light emitting surface 10, the total projected area of the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200 on the light emitting surface 10 is reduced, and thus the size of the light emitting device can be reduced, the number of light emitting devices can be increased, i.e., the number of pixel units can be increased, and the effects of high resolution and high resolution can be achieved.
Specifically, when the third semiconductor light emitting layer 400 and the first and second semiconductor light emitting layers 100 and 200 are each disposed obliquely to the light-emitting surface 10, the oblique direction of the third semiconductor light emitting layer 400 may be the same as the oblique direction of the first and second semiconductor light emitting layers 100 and 200, or may be different from the oblique direction of the first and second semiconductor light emitting layers 100 and 200.
Further, as shown in fig. 6, the light emitting device further includes a second light shielding layer 500, where the second light shielding layer 500 is located on the light emitting side of the third semiconductor light emitting layer 400, and the projection of the second light shielding layer 500 on the light emitting surface 10 overlaps with the partial projection of the third semiconductor light emitting layer 400 on the light emitting surface 10.
When the first, second, and third semiconductor light emitting layers 100, 200, and 400 are provided, the projection sizes of the first, second, and third semiconductor light emitting layers 100, 200, and 400 on the light emitting surface 10 may be the same. When the projection of the third semiconductor light emitting layer 400 on the light emitting surface 10 is not overlapped with the projection of the first semiconductor light emitting layer 100 on the light emitting surface 10 and the projection of the second semiconductor light emitting layer 200 on the light emitting surface 10, and the three current values are equal, the brightness of the light emitted by the third semiconductor light emitting layer 400 is relatively large, so that the second light shielding layer 500 is arranged on the light emitting side of the third semiconductor light emitting layer 400, and the projection of the second light shielding layer 500 on the light emitting surface 10 is overlapped with the partial projection of the third semiconductor light emitting layer 400 on the light emitting surface 10, the brightness of the light displayed by each semiconductor light emitting layer can be balanced, and a better light mixing effect is realized.
Further, as shown in fig. 10, the backlight side of the first semiconductor light emitting layer 100, the backlight side of the second semiconductor light emitting layer 200, and the backlight side of the third semiconductor light emitting layer 400 are each provided with a reflective film 600.
By doing so, the light emitted from the first semiconductor light emitting layer 100 is reflected by the reflection film 600 on the backlight side thereof, thereby improving the light emitting luminance of the first semiconductor light emitting layer 100, while the light emitted from the second semiconductor light emitting layer 200 is reflected by the reflection film 600 on the backlight side thereof, thereby improving the light emitting luminance of the second semiconductor light emitting layer 200; light emitted from the third semiconductor light emitting layer 400 is reflected by the reflection film 600 on the backlight side thereof, thereby improving the light emitting luminance of the third semiconductor light emitting layer 400.
Embodiment two:
the present application further proposes a display substrate, please refer to fig. 11 and 12, the display substrate includes a base 800 and a light emitting device, and the specific structure of the light emitting device refers to the above embodiment. The substrate 800 is divided into a plurality of pixel areas 801 arranged in an array, and a light emitting device is mounted in each pixel area 801.
By installing the light emitting devices in each pixel area 801, compared with the conventional scheme of arranging three light emitting devices in a tiled manner in each pixel area 801, the planar area occupied by the scheme is smaller, so that each pixel area 801 can be smaller, the number of pixel areas 801 on a display substrate is increased, and the resolution of the display substrate are improved.
Embodiment III:
the application further provides a display device, as shown in fig. 13, where the display device includes a package cover plate 900 and a display substrate, and the specific structure of the display substrate refers to the above embodiment. The package cover 900 is disposed on a side of the light emitting device facing away from the substrate. By arranging the encapsulation cover plate 900 on the side of the light emitting device facing away from the substrate, the light emitting device can be encapsulated and protected.
The foregoing description is only of the preferred embodiments of the present application and is not intended to limit the scope of the claims, and all equivalent structural changes made in the present application and the accompanying drawings or direct/indirect application in other related technical fields are included in the scope of the present application.
Claims (10)
1. A light emitting device, comprising:
a first semiconductor light emitting layer;
the second semiconductor light-emitting layer is positioned on the backlight side of the first semiconductor light-emitting layer, is staggered and stacked with the first semiconductor light-emitting layer, and emits light with different colors; and
the first light shielding layer is arranged on the light emitting side of the first semiconductor light emitting layer, and the projection of the first light shielding layer on the light emitting surface is overlapped with the partial projection of the first semiconductor light emitting layer on the light emitting surface of the light emitting device; the first light shielding layer shields a region of the first semiconductor light emitting layer not opposite to the second semiconductor light emitting layer, and shields a partial region of the first semiconductor light emitting layer opposite to the second semiconductor light emitting layer.
2. The light-emitting device according to claim 1, further comprising a third semiconductor light-emitting layer provided on a backlight side of the second semiconductor light-emitting layer, wherein a light-emitting color of the first semiconductor light-emitting layer and a light-emitting color of the second semiconductor light-emitting layer are each different from a light-emitting color of the third semiconductor light-emitting layer; and the first semiconductor light-emitting layer and the second semiconductor light-emitting layer are sequentially staggered and stacked with the third semiconductor light-emitting layer.
3. The light-emitting device according to claim 2, wherein an area of a region of the third semiconductor light-emitting layer which is not covered by the second semiconductor light-emitting layer is defined as S1, an area of a region of the second semiconductor light-emitting layer which is not covered by the first semiconductor light-emitting layer is defined as S2, and an area of a region of the first semiconductor light-emitting layer which is not covered by the first light-shielding layer is defined as S3, s1=s2=s3.
4. The light-emitting device according to claim 2, wherein the first semiconductor light-emitting layer, the second semiconductor light-emitting layer, and the third semiconductor light-emitting layer together form a stacked assembly, and the stacked assembly is disposed obliquely with respect to the light-emitting surface.
5. The light-emitting device according to claim 1, further comprising a third semiconductor light-emitting layer, wherein an emission color of the first semiconductor light-emitting layer and an emission color of the second semiconductor light-emitting layer are each different from an emission color of the third semiconductor light-emitting layer; and the projection of the first semiconductor light-emitting layer on the light-emitting surface and the projection of the second semiconductor light-emitting layer on the light-emitting surface are not overlapped with the projection of the third semiconductor light-emitting layer on the light-emitting surface.
6. The light-emitting device according to claim 5, wherein the third semiconductor light-emitting layer is provided obliquely with respect to the light-emitting surface; and/or the first semiconductor light-emitting layer and the second semiconductor light-emitting layer are obliquely arranged relative to the light-emitting surface.
7. The light-emitting device according to claim 5, further comprising a second light-shielding layer, wherein the second light-shielding layer is located on a light-emitting side of the third semiconductor light-emitting layer, and wherein a projection of the second light-shielding layer onto the light-emitting surface coincides with a partial projection of the third semiconductor light-emitting layer onto the light-emitting surface.
8. The light-emitting device according to any one of claims 2 to 7, wherein a backlight side of the first semiconductor light-emitting layer, a backlight side of the second semiconductor light-emitting layer, and a backlight side of the third semiconductor light-emitting layer are each provided with a reflective film.
9. A display substrate comprising a base and a light emitting device according to any one of claims 1 to 8, the base being divided into a plurality of pixel regions arranged in an array, the light emitting device being mounted in each pixel region.
10. A display device comprising a package cover and the display substrate of claim 9, wherein the package cover is disposed on a side of the light emitting device facing away from the substrate.
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| JP2013197445A (en) * | 2012-03-22 | 2013-09-30 | Seiko Epson Corp | Semiconductor light source, projection display device and semiconductor light source manufacturing method |
| JP2018045838A (en) * | 2016-09-13 | 2018-03-22 | 株式会社小糸製作所 | Light emitting module and vehicular lighting fixture |
| CN112736170A (en) * | 2021-03-30 | 2021-04-30 | 北京芯海视界三维科技有限公司 | Light emitting device and display apparatus |
| CN112736169A (en) * | 2021-03-30 | 2021-04-30 | 北京芯海视界三维科技有限公司 | Light emitting device and display apparatus |
| CN114388555A (en) * | 2021-12-20 | 2022-04-22 | 重庆惠科金渝光电科技有限公司 | Display substrate and display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR102613051B1 (en) * | 2018-09-05 | 2023-12-12 | 삼성전자주식회사 | High resolution display device |
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| JP2013197445A (en) * | 2012-03-22 | 2013-09-30 | Seiko Epson Corp | Semiconductor light source, projection display device and semiconductor light source manufacturing method |
| JP2018045838A (en) * | 2016-09-13 | 2018-03-22 | 株式会社小糸製作所 | Light emitting module and vehicular lighting fixture |
| CN112736170A (en) * | 2021-03-30 | 2021-04-30 | 北京芯海视界三维科技有限公司 | Light emitting device and display apparatus |
| CN112736169A (en) * | 2021-03-30 | 2021-04-30 | 北京芯海视界三维科技有限公司 | Light emitting device and display apparatus |
| CN114388555A (en) * | 2021-12-20 | 2022-04-22 | 重庆惠科金渝光电科技有限公司 | Display substrate and display device |
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