CN115863506A - Light emitting device, display substrate and display device - Google Patents
Light emitting device, display substrate and display device Download PDFInfo
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- CN115863506A CN115863506A CN202211653911.5A CN202211653911A CN115863506A CN 115863506 A CN115863506 A CN 115863506A CN 202211653911 A CN202211653911 A CN 202211653911A CN 115863506 A CN115863506 A CN 115863506A
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Abstract
The application discloses a light emitting device, a display substrate and a display device. The light-emitting device comprises a first semiconductor light-emitting layer, a second semiconductor light-emitting layer and a first shading layer, wherein the second semiconductor light-emitting layer is positioned on the backlight side of the first semiconductor light-emitting layer and is staggered and stacked with the first semiconductor light-emitting layer, and the first semiconductor light-emitting layer and the second semiconductor light-emitting layer emit light with different colors; the first shading layer is arranged on the light emitting side of the first semiconductor light emitting layer, and the projection of the first shading layer on the light emitting surface is superposed with the partial projection of the first semiconductor light emitting layer on the light emitting surface. This application technical scheme is through piling up the setting with first semiconductor luminescent layer and second semiconductor luminescent layer dislocation, and then shared planar area after first semiconductor luminescent layer and the second semiconductor luminescent layer pile compares shared planar area after the tiling and sum littleer in the two, and then can reduce pixel unit's area to set up more pixel unit, improved the resolution.
Description
Technical Field
The present disclosure relates to display technologies, and particularly to a light emitting device, a display substrate using the light emitting device, and a display device using the display substrate.
Background
The LED display panel based on the semiconductor material has the characteristics of high brightness, long service life, low energy consumption and high response speed. However, in a conventional LED display panel, a plurality of LED light emitting chips are mounted on a substrate in an array manner, and each LED light emitting chip is tiled on the substrate to form a sub-pixel of each pixel unit. If a higher resolution is required, the size of each pixel, i.e., the size of each LED light emitting chip, needs to be reduced, but this may deteriorate the performance of the LED device and make the manufacturing difficult.
Disclosure of Invention
The present application is directed to a light emitting device, and aims to solve the problem that it is difficult to achieve a high resolution effect of a display device.
In order to achieve the above object, the light emitting device provided in the present application includes a first semiconductor light emitting layer, a second semiconductor light emitting layer, and a first light shielding layer, where the second semiconductor light emitting layer is located on a backlight side of the first semiconductor light emitting layer and is staggered from the first semiconductor light emitting layer, and the first semiconductor light emitting layer and the second semiconductor light emitting layer emit light of different colors; the first shading layer is arranged on the light emitting side of the first semiconductor light emitting layer, and the projection of the first shading layer on the light emitting surface is superposed with the partial projection of the first semiconductor light emitting layer on the light emitting surface of the light emitting device.
In one embodiment, the light emitting device further includes a third semiconductor light emitting layer provided on a backlight side of the second semiconductor light emitting layer, and both an emission color of the first semiconductor light emitting layer and an emission color of the second semiconductor light emitting layer are different from an emission color of the third semiconductor light emitting layer; and the first semiconductor light emitting layer and the second semiconductor light emitting layer are sequentially arranged in a staggered and stacked mode with the third semiconductor light emitting layer.
In one embodiment, an area of a region of the third semiconductor light emitting layer not covered by the second semiconductor light emitting layer is defined as S1, an area of a region of the second semiconductor light emitting layer not covered by the first semiconductor light emitting layer is defined as S2, and an area of a region of the first semiconductor light emitting layer not covered by the first light shielding layer is defined as S3, and S1= S2= S3.
In an embodiment, the first semiconductor light emitting layer, the second semiconductor light emitting layer and the third semiconductor light emitting layer together form a stacked assembly, and the stacked assembly is disposed in an inclined manner with respect to the light emitting surface.
In one embodiment, the light emitting device further includes a third semiconductor light emitting layer, and both an emission color of the first semiconductor light emitting layer and an emission color of the second semiconductor light emitting layer are different from an emission color of the third semiconductor light emitting layer; and the projection of the first semiconductor light emitting layer on the light-emitting surface and the projection of the second semiconductor light emitting layer on the light-emitting surface are not coincident with the projection of the third semiconductor light emitting layer on the light-emitting surface.
In one embodiment, the third semiconductor light emitting layer is obliquely arranged relative to the light emitting surface; and/or the first semiconductor light emitting layer and the second semiconductor light emitting layer are obliquely arranged relative to the light emitting surface.
In an embodiment, the light emitting device further includes a second light shielding layer, the second light shielding layer is located on a light emitting side of the third semiconductor light emitting layer, and a projection of the second light shielding layer on the light emitting surface coincides with a partial projection of the third semiconductor light emitting layer on the light emitting surface.
In one embodiment, the backlight side of the first semiconductor light emitting layer, the backlight side of the second semiconductor light emitting layer and the backlight side of the third semiconductor light emitting layer are provided with reflective films.
The application further provides a display substrate, which comprises a substrate and the light-emitting device, wherein the substrate is divided into a plurality of pixel areas arranged in an array mode, and the light-emitting device is installed in each pixel area.
The application also provides a display device which is characterized by comprising a packaging cover plate and the display substrate, wherein the packaging cover plate is covered on one side of the substrate, and the light-emitting device deviates from the one side of the substrate.
This application technical scheme is through making luminescent device include first semiconductor luminescent layer and second semiconductor luminescent layer, and two-layer semiconductor luminescent layer dislocation piles up the setting, and the colour of the light that sends is different, it is littleer to make shared planar area after first semiconductor luminescent layer and the second semiconductor luminescent layer pile compare in the two shared planar area after tiling, and then can realize the effect that reduces the area of pixel unit, in the display device of equal size, can set up more pixel units, improve display device's resolution ratio, realize the effect of high resolution. In addition, the first semiconductor light emitting layer and the second semiconductor light emitting layer are arranged in a staggered and stacked mode, compared with the scheme that the first semiconductor light emitting layer and the second semiconductor light emitting layer are arranged in a completely stacked mode, the overall size of the light emitting device is larger, the overall size of the light emitting device can be increased, good light emitting performance of the light emitting device is guaranteed, and meanwhile the requirement for machining accuracy is lowered. In addition, the first light shielding layer is arranged on the light emitting side of the first semiconductor light emitting layer, and the projection of the first light shielding layer on the light emitting surface is overlapped with the partial projection of the first semiconductor light emitting layer on the light emitting surface, so that the area of a light emitting area of the first semiconductor light emitting layer is equivalent to the area of an area, which is not shielded by the first semiconductor light emitting layer, of the second semiconductor light emitting layer, and a better light mixing effect can be achieved.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
Fig. 1 is a schematic front view illustrating an exemplary light emitting device in which a first semiconductor light emitting layer, a second semiconductor light emitting layer and a third semiconductor light emitting layer are stacked in a staggered manner;
fig. 2 is a schematic perspective view illustrating an exemplary structure of a first semiconductor light emitting layer, a second semiconductor light emitting layer and a third semiconductor light emitting layer of a light emitting device according to an embodiment of the present disclosure, which are stacked in a staggered manner;
fig. 3 is a schematic front view illustrating another example of a staggered stacked arrangement of a first semiconductor light emitting layer, a second semiconductor light emitting layer and a third semiconductor light emitting layer in a light emitting device according to an embodiment of the present disclosure;
fig. 4 is a schematic perspective view illustrating another example of a staggered stacked arrangement of a first semiconductor light emitting layer, a second semiconductor light emitting layer and a third semiconductor light emitting layer in a light emitting device according to an embodiment of the present disclosure;
fig. 5 is a schematic structural diagram of an example of a projection of the first semiconductor light emitting layer and the second semiconductor light emitting layer on the light emitting surface of the light emitting device of the embodiment of the present application, which are not overlapped with each other;
FIG. 6 is a schematic structural view of the third semiconductor light emitting layer in FIG. 5 with a second light shielding layer disposed thereon;
fig. 7 is a schematic structural diagram of another example in which the first semiconductor light emitting layer and the second semiconductor light emitting layer in the light emitting device of the embodiment of the present application do not overlap with the projection of the third semiconductor light emitting layer on the light emitting surface;
fig. 8 is a schematic front view illustrating a projection of the first semiconductor light emitting layer and the second semiconductor light emitting layer onto the light emitting surface of the third semiconductor light emitting layer in a light emitting device according to an embodiment of the present disclosure;
fig. 9 is a schematic front view illustrating another example of a light emitting device according to an embodiment of the present disclosure, in which the first semiconductor light emitting layer and the second semiconductor light emitting layer are not overlapped with the third semiconductor light emitting layer in projection on the light emitting surface;
fig. 10 is a schematic structural view of a light emitting device provided with a reflective film according to an embodiment of the present disclosure;
FIG. 11 is a schematic front view illustrating a structure of a display substrate according to an embodiment of the present application;
fig. 12 is a schematic perspective view of a second display substrate according to an embodiment of the present disclosure;
fig. 13 is a schematic front structure diagram of an embodiment of a third display device according to the present application.
The reference numbers illustrate:
| reference numerals | Name (R) | Reference numerals | Name (R) |
| 100 | First semiconductor |
200 | Second semiconductor light emitting layer |
| 300 | A first light- |
400 | Third semiconductor light emitting layer |
| 500 | A second light- |
600 | |
| 800 | |
801 | |
| 900 | |
10 | Light emitting surface |
The implementation, functional features and advantages of the objectives of the present application will be further explained with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present application will be described clearly and completely with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present application without making any creative effort belong to the protection scope of the present application.
It should be noted that, if directional indications (such as up, down, left, right, front, and back … …) are involved in the embodiment of the present application, the directional indications are only used to explain the relative position relationship between the components, the motion situation, and the like in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indications are changed accordingly.
In addition, if there is a description of "first", "second", etc. in the embodiments of the present application, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present application.
The first embodiment is as follows:
the present application provides a light emitting device.
In the embodiment of the present application, please refer to fig. 1 to 9 in combination, the light emitting device includes a first semiconductor light emitting layer 100, a second semiconductor light emitting layer 200 and a first light shielding layer 300, the second semiconductor light emitting layer 200 is located on the backlight side of the first semiconductor light emitting layer 100 and is disposed in a staggered and stacked manner with the first semiconductor light emitting layer 100, and the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200 emit light with different colors; the first light shielding layer 300 is disposed on the light emitting side of the first semiconductor light emitting layer 100, and a projection of the first light shielding layer 300 on the light emitting surface 10 coincides with a partial projection of the first semiconductor light emitting layer 100 on the light emitting surface 10 of the light emitting device.
The display panel has a plurality of pixel units, each pixel unit is composed of a plurality of sub-pixel units with different colors, for example, a red pixel unit, a green pixel unit and a blue pixel unit are composed of a pixel unit, wherein the red pixel unit, the green pixel unit and the blue pixel unit are all sub-pixel units in one pixel unit. In the light emitting diode display panel, each light emitting diode correspondingly forms a sub-pixel unit. In the light emitting device in the technical solution of the present application, the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200 emit light with different colors, and the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200 can be regarded as two sub-pixel units with different colors respectively. The first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200 are stacked with a relative offset, i.e. it can be regarded as two sub-pixel units are stacked on each other.
Compared with the conventional scheme that the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200 are laid in a flat manner, in the technical scheme of the application, the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200 are arranged in a staggered and stacked manner, so that when two sub-pixel units are formed similarly, the planar area occupied by the light emitting device is smaller, the sum of the areas of a plurality of sub-pixels in one pixel area 801 can be reduced, namely the area of each pixel unit is reduced, when the light emitting device is applied to a display device, the number of pixel units arranged in the display device is increased, the resolution of the display device is improved, and the effect of high resolution is achieved. In addition, it can be understood that, because the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200 are stacked and arranged, and have mutually overlapped regions in the direction perpendicular to the plane, the size of the first semiconductor light emitting layer 100 and the size of the second semiconductor light emitting layer 200 in the technical solution of the present application may not be too small, and thus the overall size of the light emitting device may not be too small, thereby ensuring that the light emitting device has better light emitting performance; meanwhile, the requirement on the processing precision in the manufacturing process of the light-emitting device is reduced. Furthermore, by arranging the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200 in a staggered and stacked manner, the area of the second semiconductor light emitting layer 200 not covered by the first semiconductor light emitting layer 100 can be adjusted at will according to the needs, and further the area of the sub-pixel unit and the area of the whole pixel unit are adjusted, so that the effect of high resolution can be easily realized.
Specifically, the projection areas of the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200 on the light emitting surface 10 may be equal or different. The first semiconductor light emitting layer 100 and the second light emitting layer may be arranged to be shifted in only one direction, or may be arranged to be shifted in both directions. The light emitting device in the technical solution of the present application may only include the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200, or may further include other semiconductor light emitting layers other than the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200, and the other semiconductor light emitting layers may be continuously stacked with the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200, or may not be stacked with the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200.
It can be understood that, when the second semiconductor light emitting layer 200 is disposed on the backlight side of the first semiconductor light emitting layer 100, the first semiconductor light emitting layer 100 blocks a part of the light emitted by the second semiconductor light emitting layer 200, i.e. blocks the light emitted by the area where the projection of the second semiconductor light emitting layer 200 on the light emitting surface 10 coincides with the projection of the first semiconductor light emitting layer 100 on the light emitting surface 10, so that when the first semiconductor light emitting layer 100 uses the same current as the second semiconductor light emitting layer 200, the brightness of the light emitted by the first semiconductor light emitting layer 100 is greater than the brightness of the light emitted by the second semiconductor light emitting layer 200 during display. According to the technical scheme of the application, the first light shielding layer 300 is arranged on the light emitting side of the first semiconductor light emitting layer 100, so that the first light shielding layer 300 can shield the brightness of the light emitted by the first semiconductor light emitting layer 100, and further, when a display device applying the light emitting device displays, the difference between the brightness of the light emitted by the first semiconductor light emitting layer 100 and the brightness of the light emitted by the second semiconductor light emitting layer 200 is small. Of course, in order to achieve the effect of uniform light display of each color, the current value passing through the first semiconductor light emitting layer 100 may be reduced or the current value passing through the second semiconductor light emitting layer 200 may be increased without increasing the number of the first light shielding layer 300.
This application technical scheme is through making luminescent device include first semiconductor luminescent layer 100 and second semiconductor luminescent layer 200, and two-layer semiconductor luminescent layer dislocation piles up the setting, and the colour of the light that sends is different, it is littleer to make the shared plane area after first semiconductor luminescent layer 100 and the second semiconductor luminescent layer 200 pile up compare in the two shared plane area after tiling, and then can realize the effect that reduces the area of pixel unit, in the display device of equal size, can set up more pixel units, improve display device's resolution ratio, realize the effect of high resolution. In addition, the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200 are arranged in a staggered and stacked manner, and compared with the scheme that the first semiconductor light emitting layer and the second semiconductor light emitting layer are completely stacked, the overall size is larger, so that the overall size of the light emitting device can be increased, the good light emitting performance of the light emitting device is ensured, and meanwhile, the requirement on the processing precision is reduced. In addition, by providing the first light shielding layer 300 on the light emitting side of the first semiconductor light emitting layer 100, and overlapping the projection of the first light shielding layer 300 on the light emitting surface 10 with the partial projection of the first semiconductor light emitting layer 100 on the light emitting surface 10, the area of the light emitting region of the first semiconductor light emitting layer 100 is equivalent to the area of the region of the second semiconductor light emitting layer 200 not shielded by the first semiconductor light emitting layer 100, and thus better light mixing effect can be achieved.
As an example, referring to fig. 1 to 4 in combination, the light emitting device further includes a third semiconductor light emitting layer 400 disposed on the backlight side of the second semiconductor light emitting layer 200, and the light emitting color of the first semiconductor light emitting layer 100 and the light emitting color of the second semiconductor light emitting layer 200 are different from the light emitting color of the third semiconductor light emitting layer 400; and the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200 are stacked with the third semiconductor light emitting layer 400 in a staggered manner.
Specifically, the colors of light emitted from the third semiconductor light emitting layer 400, the second semiconductor light emitting layer 200, and the first semiconductor light emitting layer 100 may be red, green, and blue, respectively, so that light emitted from the three semiconductor light emitting layers may be mixed into light of a plurality of colors. In this example, by arranging the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200 in a staggered and stacked manner with the third semiconductor light emitting layer 400, the planar area occupied by the whole three semiconductor light emitting layers is further smaller than that occupied by the conventional three semiconductor light emitting layers when tiled, so that the area of a single pixel unit can be further reduced, a display device with the same area can be provided with more pixel units, the resolution of the display device is improved, and the effect of high resolution is achieved.
When the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200 are stacked with the third semiconductor light emitting layer 400 in a staggered manner, the method may include: the dislocation direction of the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200 is the same as the dislocation direction of the second semiconductor light emitting layer 200 and the third semiconductor light emitting layer 400; alternatively, the dislocation direction of the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200 is opposite to the dislocation direction of the second semiconductor light emitting layer 200 and the third semiconductor light emitting layer 400; alternatively, the offset direction between the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200 and the offset direction between the second semiconductor light emitting layer 200 and the third semiconductor light emitting layer 400 are perpendicular to each other.
Further, as shown in fig. 2, an area of a region of the third semiconductor light emitting layer 400 not covered by the second semiconductor light emitting layer 200 is defined as S1, an area of a region of the second semiconductor light emitting layer 200 not covered by the first semiconductor light emitting layer 100 is defined as S2, an area of a region of the first semiconductor light emitting layer 100 not covered by the first light shielding layer 300 is defined as S3, and S1= S2= S3.
With this arrangement, the luminance of light emitted from the first semiconductor light emitting layer 100, the luminance of light emitted from the second semiconductor light emitting layer 200, and the luminance of light emitted from the third semiconductor light emitting layer 400 when viewed from the light emitting side during display are equal, so that a good light mixing effect can be achieved.
Further, as shown in fig. 3 and 4, the first semiconductor light emitting layer 100, the second semiconductor light emitting layer 200 and the third semiconductor light emitting layer 400 together form a stacked assembly, and the stacked assembly is disposed obliquely with respect to the light emitting surface 10.
The first semiconductor light emitting layer 100, the second semiconductor light emitting layer 200 and the third semiconductor light emitting layer 400 together form a stacked assembly which is inclined relative to the light emitting surface 10, so that the projection of the stacked assembly on the light emitting surface 10 is further reduced, the arrangement number of pixel units in the display device is increased, and the effects of high resolution and high resolution are further achieved.
As another example, referring to fig. 5 to 9 in combination, the light emitting device further includes a third semiconductor light emitting layer 400, where both the light emitting color of the first semiconductor light emitting layer 100 and the light emitting color of the second semiconductor light emitting layer 200 are different from the light emitting color of the third semiconductor light emitting layer 400; and the projection of the first semiconductor light emitting layer 100 on the light emitting surface 10 and the projection of the second semiconductor light emitting layer 200 on the light emitting surface 10 are not coincident with the projection of the third semiconductor light emitting layer 400 on the light emitting surface 10.
Specifically, the colors of light emitted from the third semiconductor light emitting layer 400, the second semiconductor light emitting layer 200, and the first semiconductor light emitting layer 100 may be red, green, and blue, respectively, so that light emitted from the three semiconductor light emitting layers may be mixed into light of a plurality of colors. In this example, by arranging the projection of the first semiconductor light emitting layer 100 on the light emitting surface 10 and the projection of the second semiconductor light emitting layer 200 on the light emitting surface 10 not to be overlapped with the projection of the third semiconductor light emitting layer 400 on the light emitting surface 10, the occupied planar area is smaller than that of the conventional three semiconductor light emitting layers when tiled, so that a display device with the same area can be provided with more pixel units, the resolution of the display device is improved, and the effect of high resolution is achieved; and the whole size is larger compared with the three semiconductor light emitting layers when the three semiconductor light emitting layers are stacked, so that the light emitting performance of the light emitting device can be improved, and the requirement on the manufacturing precision of the light emitting device is reduced.
The third semiconductor light emitting layer 400 may be disposed in the same layer as the first semiconductor light emitting layer 100, or may be disposed in the same layer as the second semiconductor light emitting layer 200, or may be disposed in the same layer as a region between the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200.
Further, referring to fig. 7 to 9, the third semiconductor light emitting layer 400 is disposed obliquely with respect to the light emitting surface 10; and/or the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200 are obliquely arranged relative to the light emitting surface 10.
By arranging the third semiconductor light emitting layer 400 obliquely with respect to the light emitting surface 10, the area occupied by the projection of the third semiconductor light emitting layer 400 on the light emitting surface 10 is reduced, so that the size of the light emitting device can be reduced, the number of the light emitting devices can be increased, that is, the number of pixel units can be increased, and the effects of high resolution and high resolution can be achieved. Similarly, by disposing the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200 obliquely with respect to the light emitting surface 10, the total projection area of the first semiconductor light emitting layer 100 and the second semiconductor light emitting layer 200 on the light emitting surface 10 is reduced, so that the size of the light emitting device can be reduced, the number of light emitting devices can be increased, that is, the number of pixel units can be increased, and the effects of high resolution and high resolution can be achieved.
Specifically, when the third semiconductor light emitting layer 400 and the first and second semiconductor light emitting layers 100 and 200 are both disposed obliquely with respect to the light emitting surface 10, the oblique direction of the third semiconductor light emitting layer 400 may be the same as the oblique direction of the first and second semiconductor light emitting layers 100 and 200 or may be different from the oblique direction of the first and second semiconductor light emitting layers 100 and 200.
Further, as shown in fig. 6, the light emitting device further includes a second light shielding layer 500, the second light shielding layer 500 is located on the light emitting side of the third semiconductor light emitting layer 400, and a projection of the second light shielding layer 500 on the light emitting surface 10 is overlapped with a partial projection of the third semiconductor light emitting layer 400 on the light emitting surface 10.
When the first semiconductor light emitting layer 100, the second semiconductor light emitting layer 200 and the third semiconductor light emitting layer 400 are disposed, the projection sizes of the first semiconductor light emitting layer 100, the second semiconductor light emitting layer 200 and the third semiconductor light emitting layer 400 on the light emitting surface 10 may be the same. When the projection of the third semiconductor light emitting layer 400 on the light emitting surface 10 does not coincide with the projection of the first semiconductor light emitting layer 100 on the light emitting surface 10 and the projection of the second semiconductor light emitting layer 200 on the light emitting surface 10, and the current values of the three are equal, the brightness of the light emitted by the third semiconductor light emitting layer 400 is higher, so that the brightness of the light displayed by each semiconductor light emitting layer can be balanced by arranging the second light shielding layer 500 on the light emitting side of the third semiconductor light emitting layer 400, and the projection of the second light shielding layer 500 on the light emitting surface 10 coincides with the partial projection of the third semiconductor light emitting layer 400 on the light emitting surface 10, thereby achieving a better light mixing effect.
Further, as shown in fig. 10, the backlight side of the first semiconductor light emitting layer 100, the backlight side of the second semiconductor light emitting layer 200, and the backlight side of the third semiconductor light emitting layer 400 are provided with the reflective film 600.
With this arrangement, the light emitted from the first semiconductor light emitting layer 100 is reflected by the reflective film 600 on the backlight side thereof, so that the light emitting luminance of the first semiconductor light emitting layer 100 is improved, and the light emitted from the second semiconductor light emitting layer 200 is reflected by the reflective film 600 on the backlight side thereof, so that the light emitting luminance of the second semiconductor light emitting layer 200 is improved; the light emitted from the third semiconductor light emitting layer 400 is reflected by the reflective film 600 on the backlight side thereof, thereby improving the light emitting luminance of the third semiconductor light emitting layer 400.
Example two:
the present application further provides a display substrate, please refer to fig. 11 and 12 in combination, where the display substrate includes a base 800 and a light emitting device, and the specific structure of the light emitting device refers to the above embodiments. The substrate 800 is divided into a plurality of pixel regions 801 arranged in an array, and each pixel region 801 is provided with a light emitting device.
Compared with the conventional scheme that three light emitting devices are arranged in each pixel area 801 in a tiled manner, the light emitting device has a smaller planar area, so that each pixel area 801 can be smaller, the number of the pixel areas 801 on the display substrate is increased, and the resolution of the display substrate are improved.
Example three:
as shown in fig. 13, the display device includes a package cover 900 and a display substrate, and the specific structure of the display substrate refers to the above embodiments, and since the display device adopts all technical solutions of all the above embodiments, the display device at least has all beneficial effects brought by the technical solutions of the above embodiments, and details are not repeated here. The package cover 900 covers a side of the light emitting device away from the substrate. By disposing the package cover 900 on a side of the light emitting device away from the substrate, the light emitting device can be protected by packaging.
The above description is only a preferred embodiment of the present application, and not intended to limit the scope of the present application, and all modifications and equivalents of the technical solutions that can be directly or indirectly applied to other related fields without departing from the spirit of the present application are intended to be included in the scope of the present application.
Claims (10)
1. A light emitting device, comprising:
a first semiconductor light emitting layer;
the second semiconductor light emitting layer is positioned on the backlight side of the first semiconductor light emitting layer and is staggered and stacked with the first semiconductor light emitting layer, and the first semiconductor light emitting layer and the second semiconductor light emitting layer emit light with different colors; and
the first shading layer is arranged on the light emitting side of the first semiconductor light emitting layer, and the projection of the first shading layer on the light emitting surface is superposed with the partial projection of the first semiconductor light emitting layer on the light emitting surface of the light emitting device.
2. The light-emitting device according to claim 1, further comprising a third semiconductor light-emitting layer provided on a backlight side of the second semiconductor light-emitting layer, wherein both an emission color of the first semiconductor light-emitting layer and an emission color of the second semiconductor light-emitting layer are different from an emission color of the third semiconductor light-emitting layer; and the first semiconductor light emitting layer and the second semiconductor light emitting layer are sequentially arranged in a staggered and stacked mode with the third semiconductor light emitting layer.
3. The light-emitting device according to claim 2, wherein an area of a region of the third semiconductor light-emitting layer not covered by the second semiconductor light-emitting layer is defined as S1, an area of a region of the second semiconductor light-emitting layer not covered by the first semiconductor light-emitting layer is defined as S2, and an area of a region of the first semiconductor light-emitting layer not covered by the first light-shielding layer is defined as S3, and S1= S2= S3.
4. The light-emitting device according to claim 2, wherein the first semiconductor light-emitting layer, the second semiconductor light-emitting layer and the third semiconductor light-emitting layer together form a stacked assembly, and the stacked assembly is disposed obliquely with respect to the light-emitting surface.
5. The light-emitting device according to claim 1, further comprising a third semiconductor light-emitting layer, wherein both an emission color of the first semiconductor light-emitting layer and an emission color of the second semiconductor light-emitting layer are different from an emission color of the third semiconductor light-emitting layer; and the projection of the first semiconductor light emitting layer on the light-emitting surface and the projection of the second semiconductor light emitting layer on the light-emitting surface are not coincident with the projection of the third semiconductor light emitting layer on the light-emitting surface.
6. The light-emitting device according to claim 5, wherein the third semiconductor light-emitting layer is disposed obliquely to the light-emitting surface; and/or the first semiconductor light emitting layer and the second semiconductor light emitting layer are obliquely arranged relative to the light emitting surface.
7. The light-emitting device according to claim 5, further comprising a second light-shielding layer, wherein the second light-shielding layer is located on a light-emitting side of the third semiconductor light-emitting layer, and a projection of the second light-shielding layer on the light-emitting surface coincides with a partial projection of the third semiconductor light-emitting layer on the light-emitting surface.
8. The light-emitting device according to any one of claims 2 to 7, wherein a backlight side of the first semiconductor light-emitting layer, a backlight side of the second semiconductor light-emitting layer, and a backlight side of the third semiconductor light-emitting layer are provided with a reflective film.
9. A display substrate comprising a substrate and the light emitting device as claimed in any one of claims 1 to 8, wherein the substrate is divided into a plurality of pixel regions arranged in an array, and the light emitting device is mounted in each pixel region.
10. A display device comprising a display substrate as claimed in claim 9 and an encapsulating cover, the encapsulating cover being arranged on a side of the light emitting device facing away from the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211653911.5A CN115863506B (en) | 2022-12-19 | 2022-12-19 | Light emitting device, display substrate and display device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211653911.5A CN115863506B (en) | 2022-12-19 | 2022-12-19 | Light emitting device, display substrate and display device |
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| CN115863506A true CN115863506A (en) | 2023-03-28 |
| CN115863506B CN115863506B (en) | 2024-03-01 |
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| JP2013197445A (en) * | 2012-03-22 | 2013-09-30 | Seiko Epson Corp | Semiconductor light source, projection display device and semiconductor light source manufacturing method |
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| US20200075665A1 (en) * | 2018-09-05 | 2020-03-05 | Samsung Electronics Co., Ltd. | High-resolution display device |
| CN112736169A (en) * | 2021-03-30 | 2021-04-30 | 北京芯海视界三维科技有限公司 | Light emitting device and display apparatus |
| CN112736170A (en) * | 2021-03-30 | 2021-04-30 | 北京芯海视界三维科技有限公司 | Light emitting device and display apparatus |
| CN114388555A (en) * | 2021-12-20 | 2022-04-22 | 重庆惠科金渝光电科技有限公司 | Display substrate and display device |
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| JP2013197445A (en) * | 2012-03-22 | 2013-09-30 | Seiko Epson Corp | Semiconductor light source, projection display device and semiconductor light source manufacturing method |
| JP2018045838A (en) * | 2016-09-13 | 2018-03-22 | 株式会社小糸製作所 | Light emitting module and vehicular lighting fixture |
| US20200075665A1 (en) * | 2018-09-05 | 2020-03-05 | Samsung Electronics Co., Ltd. | High-resolution display device |
| CN112736169A (en) * | 2021-03-30 | 2021-04-30 | 北京芯海视界三维科技有限公司 | Light emitting device and display apparatus |
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