CN115775826B - P-type grid enhanced GaN-based power device, preparation method thereof and electronic equipment - Google Patents
P-type grid enhanced GaN-based power device, preparation method thereof and electronic equipment Download PDFInfo
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The invention discloses a P-type gate enhanced GaN-based power device and a preparation method thereof, wherein the P-type gate enhanced GaN-based power device comprises a substrate, a buffer layer, a GaN voltage-resistant layer, a GaN channel layer, an AlN inserting layer, an AlGaN barrier layer and a GaN cap layer which are sequentially laminated on the substrate, and the surface of the GaN cap layer is provided with a source electrode, a drain electrode and a grid electrode growing on the surface of the P-type composite layer; the P-type composite layer comprises a plurality of first Mg atom diffusion blocking layers, second Ga atom desorption layers and third Mg atom adsorption layers which are alternately stacked and grown periodically in sequence. The P-type gate enhanced GaN-based power device provided by the invention can solve the problems of difficult ionization and low ionization rate of acceptor impurity Mg atoms.
Description
Technical Field
The invention relates to the technical field of photoelectricity, in particular to a P-type grid enhanced GaN-based power device, a preparation method thereof and electronic equipment.
Background
HEMT (high electron mobility transistor) based on AlGaN/GaN heterostructure has high current density, critical breakdown voltage and electron mobility, and has very important application value in the fields of microwave power and high-temperature electronic devices.
HEMTs typically include a chip and source, drain and gate electrodes located on the chip, and conventional depletion mode GaN-based HEMT devices cannot achieve circuit anti-false start protection in radio frequency and power circuit applications, so development of enhancement mode GaN-based HEMT devices is needed to simplify circuit design and improve circuit security. At present, the enhancement technology of a commercialized GaN-based HEMT device is a P-type gate technology, and the P-type gate is enhanced by growing P-type nitride between a gate and a barrier layer to raise the conduction band bottom of a heterojunction above the Fermi level and deplete a region 2DEG under the gate. The P-type gate enhancement type device does not need to carry out an additional treatment process on the gate, has no gate instability problem, has high reliability and becomes the first choice for commercialization of GaN power devices.
However, the P-type gate enhancement type GaN-based HEMT device still faces the problem of lower P-type doping concentration, because the energy level of acceptor impurity magnesium (Mg) in the P-type semiconductor is very high, so that the ionization difficulty (170 meV) of the acceptor impurity magnesium (Mg) is caused, and the ionization rate is only 1%. Meanwhile, the problem of large grid leakage occurs, the higher hole concentration cannot be obtained only by increasing the doping concentration of magnesium, and crystal defects appear after heavy doping, and at the moment, the compensation of acceptor doping comes from the crystal defects (self compensation), so that the acceptor doping concentration and the acceptor energy level are influenced, and the problems restrict the further popularization and application of the enhanced device.
Disclosure of Invention
The invention aims to solve the technical problem of providing a P-type grid enhanced GaN-based power device which can solve the problems of difficult ionization and low ionization rate of acceptor impurity Mg atoms.
The invention also aims to solve the technical problem of providing a preparation method of the P-type grid enhanced GaN-based power device, which has simple process and can stably prepare the P-type grid enhanced GaN-based power device with good performance.
In order to solve the technical problems, the invention provides a P-type gate enhanced GaN-based power device, which comprises a substrate, a buffer layer, a GaN voltage-resistant layer, a GaN channel layer, an AlN inserting layer, an AlGaN barrier layer and a GaN cap layer, wherein the buffer layer, the GaN voltage-resistant layer, the GaN channel layer, the AlN inserting layer, the AlGaN barrier layer and the GaN cap layer are sequentially laminated on the substrate, and a source electrode, a drain electrode and a grid electrode growing on the surface of the P-type composite layer are arranged on the surface of the GaN cap layer;
the P-type composite layer comprises a plurality of first Mg atom diffusion blocking layers, second Ga atom desorption layers and third Mg atom adsorption layers which are alternately stacked and grown periodically in sequence.
In one embodiment, the first Mg atom diffusion barrier layer, the second Ga atom desorption layer, and the third Mg atom adsorption layer have a cycle number of 2 to 20.
In one embodiment, the thickness of the P-type composite layer is 10nm to 200nm.
In one embodiment, in the P-type composite layer, the first Mg atom diffusion barrier layer has a thickness of 70% to 80%, the second Ga atom desorption layer has a thickness of 10% to 20%, and the third Mg atom adsorption layer has a thickness of 1% to 20%.
In one embodiment, the P-type composite layer has a Mg doping concentration of 1×10 20 atoms/cm 3 -1×10 21 atoms/cm 3 。
In order to solve the problems, the invention also provides a preparation method of the P-type gate enhanced GaN-based power device, which comprises the following steps:
preparing a substrate;
sequentially depositing a buffer layer, a GaN voltage-resistant layer, a GaN channel layer, an AlN inserting layer, an AlGaN barrier layer and a GaN cap layer on the substrate;
preparing a source electrode and a drain electrode on the surface of the GaN cap layer, depositing a P-type composite layer on the surface of the GaN cap layer, and preparing a grid electrode on the surface of the P-type composite layer;
the P-type composite layer comprises a plurality of first Mg atom diffusion blocking layers, second Ga atom desorption layers and third Mg atom adsorption layers which are alternately stacked and grown periodically in sequence.
In one embodiment, the first Mg atom diffusion barrier layer is grown as a precipitate by:
controlling the growth temperature of the reaction cavity to be 800-1100 ℃, introducing a gallium source, a nitrogen source and a magnesium source, and carrying out surface diffusion on gallium atoms and nitrogen atoms to form the first Mg atom diffusion barrier layer.
In one embodiment, the second Ga atom desorption layer is grown as a precipitate by:
and controlling the growth temperature of the reaction cavity to 1100-1400 ℃, and introducing a gallium source and a nitrogen source, wherein the introduced amount of the gallium source is gradually reduced to be closed, so as to form the second Ga atom desorption layer.
In one embodiment, the third Mg atom adsorption layer is grown as a precipitate by:
controlling the growth temperature of the reaction cavity to be 500-800 ℃, introducing a magnesium source and a nitrogen source, and performing surface diffusion on magnesium atoms to form the third Mg atom adsorption layer.
Correspondingly, the invention also provides electronic equipment, which comprises the P-type grid enhanced GaN-based power device.
The implementation of the invention has the following beneficial effects:
compared with the prior art, the P-type composite layer is additionally arranged on the GaN cap layer, and the P-type composite layer comprises a plurality of first Mg atom diffusion blocking layers, second Ga atom desorption layers and third Mg atom adsorption layers which are periodically and alternately stacked and grown in sequence. The first Mg atom diffusion blocking layer can effectively block Mg atoms in the third Mg atom adsorption layer from diffusing into the AlGaN barrier layer and the GaN channel layer, carrier traps and leakage channels are reduced, and performance and reliability of the HEMT device are improved. The second Ga atom desorption layer accurately regulates and controls the Ga atom desorption rate of the GaN material, and a laying is made for realizing efficient incorporation of Mg atoms in the third Mg atom adsorption layer. And the third Mg atom adsorption layer utilizes the surface effect to efficiently integrate Mg atoms into the GaN material on the basis of the second Ga atom desorption layer, and finally the high-quality P-type GaN semiconductor layer with flat surface and high hole concentration is obtained. Under the interaction of all sub-layers of the P type composite layer, the problems of difficult ionization and low ionization rate of acceptor impurity Mg atoms are finally solved.
Drawings
Fig. 1 is a schematic structural diagram of a P-type gate enhancement GaN-based power device provided by the invention.
Wherein: substrate 1, buffer layer 2, gaN withstand voltage layer 3, gaN channel layer 4, alN insertion layer 5, alGaN barrier layer 6, gaN cap layer 7, P-type composite layer 8, drain electrode 9, source electrode 10, and gate electrode 11.
Detailed Description
The present invention will be described in further detail below in order to make the objects, technical solutions and advantages of the present invention more apparent.
Unless otherwise indicated or contradicted, terms or phrases used herein have the following meanings:
in the present invention, the use of "a combination thereof", "any combination thereof", and the like includes all suitable combinations of any two or more of the listed items.
In the present invention, "preferred" is merely to describe embodiments or examples that are more effective, and it should be understood that they are not intended to limit the scope of the present invention.
In the invention, the technical characteristics described in an open mode comprise a closed technical scheme composed of the listed characteristics and also comprise an open technical scheme comprising the listed characteristics.
In the present invention, the numerical range is referred to, and both ends of the numerical range are included unless otherwise specified.
In order to solve the above problems, the present invention provides a P-type gate enhancement type GaN-based power device, as shown in fig. 1, comprising a substrate 1, and a buffer layer 2, a GaN withstand voltage layer 3, a GaN channel layer 4, an AlN insertion layer 5, an AlGaN barrier layer 6 and a GaN cap layer 7 sequentially stacked on the substrate 1, wherein the surface of the GaN cap layer 7 is provided with a source electrode 10, a drain electrode 9 and a gate electrode 11 grown on the surface of a P-type composite layer 8;
the P-type composite layer 8 comprises a plurality of first Mg atom diffusion blocking layers, second Ga atom desorption layers and third Mg atom adsorption layers which are alternately stacked and grown periodically in sequence.
In the prior art, a P-type GaN semiconductor is generally doped with Mg in GaN, and the energy level of acceptor impurity magnesium (Mg) is very high, so that ionization of acceptor impurity magnesium (Mg) is difficult (170 meV), the ionization rate is only 1%, and a higher hole concentration cannot be obtained simply by increasing the doping concentration of magnesium (Mg), because crystal defects appear after heavy doping, and at this time, the acceptor doping compensation comes from the crystal defects (self compensation), so that the acceptor doping concentration and the acceptor energy level are affected.
Compared with the prior art, the P-type composite layer 8 is additionally arranged on the GaN cap layer 7, and the P-type composite layer 8 comprises a plurality of first Mg atom diffusion blocking layers, second Ga atom desorption layers and third Mg atom adsorption layers which are periodically and alternately stacked and grown in sequence. The first Mg atom diffusion blocking layer can effectively block Mg atoms in the third Mg atom adsorption layer from diffusing into the AlGaN barrier layer 6 and the GaN channel layer 4, reduce formation of carrier traps and leakage channels, and improve performance and reliability of the HEMT device. The second Ga atom desorption layer accurately regulates and controls the Ga atom desorption rate of the GaN material, and a laying is made for realizing efficient incorporation of Mg atoms in the third Mg atom adsorption layer. And the third Mg atom adsorption layer utilizes the surface effect to efficiently integrate Mg atoms into the GaN material on the basis of the second Ga atom desorption layer, and finally the high-quality P-type GaN semiconductor layer with flat surface and high hole concentration is obtained. The problems of difficult ionization and low ionization rate of acceptor impurity Mg atoms are finally solved under the interaction of all sublayers of the P-type composite layer 8.
The P-type composite layer 8 comprises a plurality of first Mg atom diffusion blocking layers, second Ga atom desorption layers and third Mg atom adsorption layers which are alternately stacked and grown periodically in sequence. The number of cycle periods is too small, which is unfavorable for obtaining high hole concentration; the number of cycle periods is excessive, the Mg doping concentration in the P-type gate is unavoidable or increases with the number of cycle periods, the Mg doping of high concentration causes threading dislocation caused by inversion domain, point defect and surface Mg protrusion, the crystal quality of the P-type gate material is reduced, and Mg can further diffuse into the AlGaN barrier layer 6 and the GaN cap layer 7 and the GaN channel layer 4 due to memory effect. In one embodiment, the first Mg atom diffusion barrier layer, the second Ga atom desorption layer, and the third Mg atom adsorption layer have a cycle number of 2 to 20. In one embodiment, the P-type composite layer 8 has a Mg doping concentration of 1×10 20 atoms/cm 3 -1×10 21 atoms/cm 3 。
In one embodiment, the thickness of the P-type composite layer 8 is 10nm to 200nm. Preferably, in the P-type composite layer 8, the first Mg atom diffusion blocking layer has a thickness ratio of 70% -80%, the second Ga atom desorbing layer has a thickness ratio of 10% -20%, and the third Mg atom adsorbing layer has a thickness ratio of 1% -20%.
The thickness of the first Mg-atom diffusion blocking layer is greater than the thickness of the third Mg-atom adsorption layer according to the above range, so that Mg atoms of the third Mg-atom adsorption layer can be effectively blocked by the first Mg-atom diffusion blocking layer, and Mg atoms are doped with a memory effect and can be further diffused into the barrier and the channel, so that effective blocking of the first Mg-atom diffusion blocking layer needs to be ensured.
The thickness of the second Ga atom desorption layer is greater than the thickness of the third Mg atom adsorption layer in the above range, so that Ga vacancies left in the second Ga atom desorption layer can be sufficiently substituted for and filled with Mg atoms in the third Mg atom adsorption layer. However, considering the memory effect of Mg atoms, not all Mg atoms replace Ga vacancies, increasing the hole concentration of GaN, and a part of Mg atoms diffuse further into AlGaN barrier layer 6 and GaN cap layer 7 and GaN channel layer 4, and this part of Mg atoms are blocked by the first Mg atom diffusion blocking layer, so that the high hole concentration of P-type gate is increased, and at the same time, the crystal quality of materials of P-type gate and AlGaN barrier layer 6 and GaN cap layer 7 and GaN channel layer 4 is also ensured.
More preferably, the thickness of the first Mg atom diffusion barrier layer is 0.1nm to 10nm, the thickness of the second Ga atom desorption layer is 0.1nm to 10nm, and the thickness of the third Mg atom adsorption layer is 0.1nm to 10nm.
In one embodiment, the first Mg atom diffusion barrier layer is grown as a precipitate by:
controlling the growth temperature of the reaction cavity to be 800-1100 ℃, introducing a gallium source, a nitrogen source and a magnesium source, and carrying out surface diffusion on gallium atoms and nitrogen atoms to form the first Mg atom diffusion barrier layer. Preferably, the nitrogen source NH 3 The atmosphere is 35slm-50slm. In the process, after gallium atoms and nitrogen atoms enter the reaction chamber, gas phase diffusion is adsorbed on the surface of the substrate 1 to carry out surface diffusion, the diffusion coefficient reaches the best at 800-1100 ℃, and surface reaction occurs to form the gallium nitride film.
In one embodiment, the second Ga atom desorption layer is grown as a precipitate by:
and controlling the growth temperature of the reaction cavity to 1100-1400 ℃, and introducing a gallium source and a nitrogen source, wherein the introduced amount of the gallium source is gradually reduced to be closed, so as to form the second Ga atom desorption layer. Preferably, the nitrogen source NH 3 The atmosphere is 35slm-50slm. The flow rate of the gallium source is gradually reduced to off at a rate of 30% -60% reduction per minute. In the process, the gallium source is reduced until the interruption, and NH of the reaction chamber is kept 3 The atmosphere is unchanged, gallium atoms are gradually desorbed from the gallium nitride film, and the desorption efficiency reaches the maximum at 1100-1400 ℃, so that a mat is prepared for efficient incorporation of Mg atoms in the third Mg atom adsorption layer.
In one embodiment, the third Mg atom adsorption layer is grown as a precipitate by:
controlling the growth temperature of the reaction cavity to be 500-800 ℃, introducing a magnesium source and a nitrogen source, and performing surface diffusion on magnesium atoms to form the third Mg atom adsorption layer. Preferably, the nitrogen source NH 3 The atmosphere is 35slm-50slm. In the process, the growth temperature is controlled to 500-800 ℃, the diffusion coefficient of magnesium atoms reaches the best, and the gallium atoms are replaced by desorbed vacancies, so that the vacancies are efficiently incorporated into the gallium nitride film, and the hole concentration of the P-type composite layer 8 is improved.
According to the above, the P-type composite layer 8 is manufactured by adopting a specific method, wherein the first Mg atom diffusion blocking layer effectively prevents Mg from diffusing into the AlGaN barrier layer 6 and the GaN channel layer 4, reduces the formation of carrier traps and leakage channels, and improves the performance and reliability of the HEMT device. The second Ga atom desorption layer precisely controls the Ga atom desorption rate of the GaN material by regulating and controlling the growth temperature, the ammonia atmosphere and the flow of the Ga source, and lays a cushion for efficient incorporation of the Mg atoms in the third Mg atom adsorption layer. The third Mg atom adsorption layer utilizes the surface effect to realize efficient incorporation of Mg atoms by regulating and controlling the growth temperature, the ammonia atmosphere and the flow of the Mg source. The problems of difficult ionization and low ionization rate of acceptor impurity Mg atoms are solved under the comprehensive action of the three-layer structure.
Correspondingly, the invention also provides a preparation method of the P-type gate enhanced GaN-based power device, which comprises the following steps:
preparing a substrate 1;
sequentially depositing a buffer layer 2, a GaN withstand voltage layer 3, a GaN channel layer 4, an AlN inserting layer 5, an AlGaN barrier layer 6 and a GaN cap layer 7 on the substrate 1;
preparing a source electrode 10 and a drain electrode 9 on the surface of the GaN cap layer 7, depositing a P-type composite layer 8 on the surface of the GaN cap layer 7, and preparing a grid electrode 11 on the surface of the P-type composite layer 8;
the P-type composite layer 8 comprises a plurality of first Mg atom diffusion blocking layers, second Ga atom desorption layers and third Mg atom adsorption layers which are alternately stacked and grown periodically in sequence.
Specifically, the method comprises the following steps:
s1, providing a substrate 1 required for growth; preferably, a Si (111) crystal plane is used as the epitaxial layer growth substrate 1.
S2, depositing a buffer layer 2 on the substrate 1;
in one embodiment, a metal organic vapor phase chemical deposition method is adopted to deposit a buffer layer 2 on the substrate 1, the growth pressure of a reaction chamber is 50-200 torr, the rotating speed of a graphite base is controlled to be 500-1000 r/min, and NH with the flow rate of 30-70 slm is introduced 3 As a nitrogen source, trimethylaluminum having a flux of 100sccm to 400sccm was introduced as an aluminum source, and trimethylgallium having a flux of 50sccm to 200sccm was introduced as a gallium source to deposit a buffer layer 2 having a gradient of Al composition in which AlN and AlGaN are alternately laminated on a substrate 1 to a thickness of 500nm to 1000 nm.
S3, depositing a GaN voltage-resistant layer 3 on the buffer layer 2;
in one embodiment, NH with the flow rate of 10slm-60slm is introduced on the buffer layer 2 3 As nitrogen source, introducing TMGa with flow of 200-500 sccm as gallium source, and ferrocene as dopant, wherein the doping concentration of Fe is 1×10 19 atoms/cm 3 -1×10 20 atoms/cm 3 Raising the temperature of the reaction chamber to 800-1200 ℃,the pressure is controlled to be 100-500 torr, the rotating speed of the graphite base is reduced to be 500-1000 r/min, so that a GaN pressure-resistant layer 3 grows, and the thickness of the GaN pressure-resistant layer 3 is controlled to be 500-10000 nm.
S4, depositing a GaN channel layer 4 on the GaN voltage-resistant layer 3;
in one embodiment, the temperature of the reaction chamber is maintained at 700-1300 ℃, the pressure is controlled at 50-250 torr, the rotating speed of the graphite base is controlled at 800-1200 r/min, and NH with the flow rate of 40-90 slm is introduced 3 As a nitrogen source, TMGa with the flow of 300-800 sccm is introduced as a gallium source, an unintentionally doped GaN layer with high crystal quality is grown, namely a GaN channel layer 4, and the thickness of the two-dimensional combined growth layer is controlled to be 100-2000 nm.
S5, depositing an AlN inserting layer 5 on the GaN channel layer 4;
in one embodiment, the temperature of the reaction chamber is increased to 1000-1300 ℃, the pressure is controlled to be 50-250 torr, the rotating speed of the graphite base is controlled to be 800-1200 r/min, and NH with the flow of 30-80 slm is introduced 3 As a nitrogen source, trimethylaluminum with a flux of 100sccm to 400sccm was introduced as an aluminum source, and the thickness of the AlN insert layer 5 was controlled to be 0.5nm to 10nm.
S6, depositing an AlGaN barrier layer 6 on the AlN inserting layer 5;
in one embodiment, the temperature of the reaction chamber is maintained to 1000-1250 ℃, the pressure is controlled to 50-250 torr, the rotating speed of the graphite base is controlled to 800-1200 r/min, and NH with the flow of 30-80 slm is introduced 3 As a nitrogen source, trimethylaluminum with a flow rate of 100sccm-400sccm is used as an aluminum source, TMGa with a flow rate of 50sccm-200sccm is used as a gallium source, and the thickness of the AlGaN barrier layer 6 is controlled to be 5nm-50nm.
S7, depositing a GaN cap layer 7 on the AlGaN barrier layer 6;
in one embodiment, the temperature of the reaction chamber is increased to 1000-1300 ℃, the pressure is controlled to be 100-250 torr, the rotating speed of the graphite base is controlled to be 800-1200 r/min, and NH with the flow of 40-90 slm is introduced 3 As a nitrogen source, TMGa with the flow of 10-50 sccm is introduced as a gallium source, a GaN cap layer 7 is grown, and the thickness of the GaN cap layer 7 is controlled to be 1-10 nm.
S8, depositing a P-type composite layer 8 on the GaN cap layer 7;
and periodically and alternately stacking and growing a first Mg atom diffusion blocking layer, a second Ga atom desorption layer and a third Mg atom adsorption layer on the surface of the GaN cap layer 7 in sequence.
In one embodiment, the temperature of the reaction chamber is controlled to be 500-1400 ℃, the pressure is controlled to be 100-500 torr, the rotating speed of the graphite base is controlled to be 800-1200 r/min, and NH with the flow of 30-90 slm is introduced 3 As nitrogen source, introducing TEGa with flow of 100-800 sccm as gallium source, introducing magnesium dicyclopentadiene as dopant, wherein the doping concentration of Mg is 1×10 20 atoms/cm 3 -1×10 21 atoms/cm 3 。
In one embodiment, the first Mg atom diffusion barrier layer is grown as a precipitate by:
controlling the growth temperature of the reaction cavity to be 800-1100 ℃, introducing a gallium source, a nitrogen source and a magnesium source, and carrying out surface diffusion on gallium atoms and nitrogen atoms to form the first Mg atom diffusion barrier layer. Preferably, the nitrogen source NH 3 The atmosphere is 35slm-50slm. In the process, after gallium atoms and nitrogen atoms enter the reaction chamber, gas phase diffusion is adsorbed on the surface of the substrate 1 to carry out surface diffusion, the diffusion coefficient reaches the best at 800-1100 ℃, and surface reaction occurs to form the gallium nitride film.
In one embodiment, the second Ga atom desorption layer is grown as a precipitate by:
and controlling the growth temperature of the reaction cavity to 1100-1400 ℃, and introducing a gallium source and a nitrogen source, wherein the introduced amount of the gallium source is gradually reduced to be closed, so as to form the second Ga atom desorption layer. Preferably, the nitrogen source NH 3 The atmosphere is 35slm-50slm. The flow rate of the gallium source is gradually reduced to off at a rate of 30% -60% reduction per minute. In the process, the gallium source is reduced until the interruption, and NH of the reaction chamber is kept 3 Atmosphere is unchanged, gallium atoms are gradually changedGradually desorbing from the gallium nitride film, and reaching the maximum desorption efficiency at 1100-1400 ℃, thereby making a bedding for the efficient incorporation of Mg atoms in the third Mg atom adsorption layer.
In one embodiment, the third Mg atom adsorption layer is grown as a precipitate by:
controlling the growth temperature of the reaction cavity to be 500-800 ℃, introducing a magnesium source and a nitrogen source, and performing surface diffusion on magnesium atoms to form the third Mg atom adsorption layer. Preferably, the nitrogen source NH 3 The atmosphere is 35slm-50slm. In the process, the growth temperature is controlled to 500-800 ℃, the diffusion coefficient of magnesium atoms reaches the best, and the gallium atoms are replaced by desorbed vacancies, so that the vacancies are efficiently incorporated into the gallium nitride film, and the hole concentration of the P-type composite layer 8 is improved.
The first Mg atom diffusion blocking layer effectively prevents Mg from diffusing into the AlGaN barrier layer 6 and the GaN channel layer 4, reduces formation of carrier traps and leakage channels, and improves performance and reliability of the HEMT device. The second Ga atom desorption layer precisely controls the Ga atom desorption rate of the GaN material by regulating and controlling the growth temperature, the ammonia atmosphere and the flow of the Ga source, and lays a cushion for efficient incorporation of the Mg atoms in the third Mg atom adsorption layer. The third Mg atom adsorption layer utilizes the surface effect to realize efficient incorporation of Mg atoms by regulating and controlling the growth temperature, the ammonia atmosphere and the flow of the Mg source. The problems of difficult ionization and low ionization rate of acceptor impurity Mg atoms are solved under the comprehensive action of the three-layer structure.
S9, preparing a source electrode 10 and a drain electrode 9 on the surface of the GaN cap layer 7, and preparing a grid electrode 11 on the surface of the P-type composite layer 8.
Correspondingly, the invention also provides electronic equipment, which comprises the P-type grid enhanced GaN-based power device.
The preparation process is completed by adopting MOCVD equipment, CVD equipment or PVD equipment, high-purity ammonia gas is used as a nitrogen source, trimethylgallium or triethylgallium is used as a gallium source, trimethylaluminum is used as an aluminum source, wherein silane is used as an N-type dopant, magnesium cyclopentadienyl is used as a P-type dopant, ferrocene is used as a GaN voltage-resistant layer 3 dopant, and high-purity hydrogen and/or high-purity nitrogen gas is used as carrier gas. The deposition apparatus and the raw material the present invention is not particularly limited.
The invention is further illustrated by the following examples:
example 1
The embodiment provides a P-type gate enhanced GaN-based power device, which comprises a substrate, a buffer layer, a GaN voltage-resistant layer, a GaN channel layer, an AlN inserting layer, an AlGaN barrier layer and a GaN cap layer, wherein the buffer layer, the GaN voltage-resistant layer, the GaN channel layer, the AlN inserting layer, the AlGaN barrier layer and the GaN cap layer are sequentially laminated on the substrate, and a source electrode, a drain electrode and a grid electrode growing on the surface of the P-type composite layer are arranged on the surface of the GaN cap layer;
the P-type composite layer comprises a first Mg atom diffusion blocking layer, a second Ga atom desorption layer and a third Mg atom adsorption layer which are sequentially and alternately stacked and grown in 10 periods.
The preparation method of the P-type gate enhanced GaN-based power device comprises the following steps:
preparing a substrate;
sequentially depositing a buffer layer, a GaN voltage-resistant layer, a GaN channel layer, an AlN inserting layer, an AlGaN barrier layer and a GaN cap layer on the substrate;
preparing a source electrode and a drain electrode on the surface of the GaN cap layer, depositing a P-type composite layer on the surface of the GaN cap layer, and preparing a grid electrode on the surface of the P-type composite layer;
wherein, deposit the P type composite layer on the said GaN cap layer, including the following steps:
and a first Mg atom diffusion blocking layer, a second Ga atom desorption layer and a third Mg atom adsorption layer which grow for 10 periods are sequentially and alternately laminated on the surface of the GaN cap layer.
The first Mg atom diffusion barrier layer grows and precipitates by adopting the following method:
and controlling the growth temperature of the reaction cavity to be 1000 ℃, introducing a gallium source, a nitrogen source and a magnesium source, wherein the introduced amount of the nitrogen source is 40slm, and carrying out surface diffusion on gallium atoms and nitrogen atoms to form the first Mg atom diffusion barrier layer.
The second Ga atom desorption layer grows and precipitates by adopting the following method:
and controlling the growth temperature of the reaction cavity to be 1200 ℃, and introducing a gallium source and a nitrogen source, wherein the flow of the gallium source is gradually reduced to be closed at a speed of reducing 50% per minute, and the introduced nitrogen source is 40slm, so that the second Ga atom desorption layer is formed.
The third Mg atom adsorption layer grows and precipitates by adopting the following method:
and controlling the growth temperature of the reaction cavity to be 700 ℃, and introducing a magnesium source and a nitrogen source, wherein the introduced amount of the nitrogen source is 40slm, and performing surface diffusion on magnesium atoms to form the third Mg atom adsorption layer.
Example 2
The embodiment provides a P-type gate enhanced GaN-based power device, which comprises a substrate, a buffer layer, a GaN voltage-resistant layer, a GaN channel layer, an AlN inserting layer, an AlGaN barrier layer and a GaN cap layer, wherein the buffer layer, the GaN voltage-resistant layer, the GaN channel layer, the AlN inserting layer, the AlGaN barrier layer and the GaN cap layer are sequentially laminated on the substrate, and a source electrode, a drain electrode and a grid electrode growing on the surface of the P-type composite layer are arranged on the surface of the GaN cap layer;
the P-type composite layer comprises a first Mg atom diffusion blocking layer, a second Ga atom desorption layer and a third Mg atom adsorption layer which are sequentially and alternately stacked and grown in 2 periods.
The preparation method of the P-type gate enhanced GaN-based power device comprises the following steps:
preparing a substrate;
sequentially depositing a buffer layer, a GaN voltage-resistant layer, a GaN channel layer, an AlN inserting layer, an AlGaN barrier layer and a GaN cap layer on the substrate;
preparing a source electrode and a drain electrode on the surface of the GaN cap layer, depositing a P-type composite layer on the surface of the GaN cap layer, and preparing a grid electrode on the surface of the P-type composite layer;
wherein, deposit the P type composite layer on the said GaN cap layer, including the following steps:
and alternately stacking a first Mg atom diffusion blocking layer, a second Ga atom desorption layer and a third Mg atom adsorption layer which grow for 2 periods on the surface of the GaN cap layer in sequence.
The first Mg atom diffusion barrier layer grows and precipitates by adopting the following method:
and controlling the growth temperature of the reaction cavity to be 800 ℃, introducing a gallium source, a nitrogen source and a magnesium source, wherein the introduced amount of the nitrogen source is 35slm, and carrying out surface diffusion on gallium atoms and nitrogen atoms to form the first Mg atom diffusion barrier layer.
The second Ga atom desorption layer grows and precipitates by adopting the following method:
and controlling the growth temperature of the reaction cavity to be 1100 ℃, and introducing a gallium source and a nitrogen source, wherein the flow of the gallium source is gradually reduced to be closed at a speed of reducing 50% per minute, and the introducing amount of the nitrogen source is 35slm, so that the second Ga atom desorption layer is formed.
The third Mg atom adsorption layer grows and precipitates by adopting the following method:
and controlling the growth temperature of the reaction cavity to be 750 ℃, introducing a magnesium source and a nitrogen source, wherein the introduced amount of the nitrogen source is 35slm, and performing surface diffusion on magnesium atoms to form the third Mg atom adsorption layer.
Example 3
The embodiment provides a P-type gate enhanced GaN-based power device, which comprises a substrate, a buffer layer, a GaN voltage-resistant layer, a GaN channel layer, an AlN inserting layer, an AlGaN barrier layer and a GaN cap layer, wherein the buffer layer, the GaN voltage-resistant layer, the GaN channel layer, the AlN inserting layer, the AlGaN barrier layer and the GaN cap layer are sequentially laminated on the substrate, and a source electrode, a drain electrode and a grid electrode growing on the surface of the P-type composite layer are arranged on the surface of the GaN cap layer;
the P-type composite layer comprises a first Mg atom diffusion blocking layer, a second Ga atom desorption layer and a third Mg atom adsorption layer which are sequentially and alternately stacked and grown for 20 periods.
The preparation method of the P-type gate enhanced GaN-based power device comprises the following steps:
preparing a substrate;
sequentially depositing a buffer layer, a GaN voltage-resistant layer, a GaN channel layer, an AlN inserting layer, an AlGaN barrier layer and a GaN cap layer on the substrate;
preparing a source electrode and a drain electrode on the surface of the GaN cap layer, depositing a P-type composite layer on the surface of the GaN cap layer, and preparing a grid electrode on the surface of the P-type composite layer;
wherein, deposit the P type composite layer on the said GaN cap layer, including the following steps:
and alternately stacking a first Mg atom diffusion blocking layer, a second Ga atom desorption layer and a third Mg atom adsorption layer which grow for 20 periods on the surface of the GaN cap layer in sequence.
The first Mg atom diffusion barrier layer grows and precipitates by adopting the following method:
and controlling the growth temperature of the reaction cavity to be 1100 ℃, introducing a gallium source, a nitrogen source and a magnesium source, wherein the introduced amount of the nitrogen source is 50slm, and carrying out surface diffusion on gallium atoms and nitrogen atoms to form the first Mg atom diffusion barrier layer.
The second Ga atom desorption layer grows and precipitates by adopting the following method:
and controlling the growth temperature of the reaction cavity to be 1400 ℃, and introducing a gallium source and a nitrogen source, wherein the flow of the gallium source is gradually reduced to be closed at a speed of reducing by 50% per minute, and the introduced nitrogen source is 50slm, so that the second Ga atom desorption layer is formed.
The third Mg atom adsorption layer grows and precipitates by adopting the following method:
and controlling the growth temperature of the reaction cavity to be 800 ℃, introducing a magnesium source and a nitrogen source, wherein the introduced amount of the nitrogen source is 50slm, and performing surface diffusion on magnesium atoms to form the third Mg atom adsorption layer.
Comparative example 1
This comparative example provides a P-type gate enhanced GaN-based power device, which is different from embodiment 1 in that: the P-type composite layer was not provided with the first Mg atom diffusion barrier layer, and the rest was the same as in example 1.
Comparative example 2
This comparative example provides a P-type gate enhanced GaN-based power device, which is different from embodiment 1 in that: the second Ga atom desorption layer was not provided in the P-type composite layer, and the rest was the same as in example 1.
Comparative example 3
This comparative example provides a P-type gate enhanced GaN-based power device, which is different from embodiment 1 in that: the third Mg atom adsorption layer was not provided in the P-type clad layer, and the rest was the same as in example 1.
The P-type gate enhanced GaN-based power devices prepared in example 1-example 3 and comparative example 1-comparative example 3 were tested to compare sheet resistance uniformity and DS leakage, and the test results are shown below.
Table 1 shows the sheet resistance uniformity test results of the P-type gate-enhanced GaN-based power devices prepared in example 1-example 3 and comparative example 1-comparative example 3
The sheet resistances of examples 1 and 3 are both around 280 Ω, and the sheet resistance of example 3 is much smaller than the sheet resistance of the comparative example at around 330 Ω. And the on-chip uniformity of each example was also much higher than that of the comparative example.
Table 2 shows the DS leakage test results of the P-type gate-enhanced GaN-based power devices prepared in example 1-example 3 and comparative example 1-comparative example 3
Table 2 shows the results of a test for the breakdown-free characteristic of a 72mm device DS leakage, with the breakdown voltage of the small devices of the examples being normal. And the threshold voltage of the wafer with small square resistance is more negative. Whereas in the comparative example there is a field with a threshold voltage of-5, -6V.
Table 3 shows the results of the high device yield tests of the P-type gate-enhanced GaN-based power devices prepared in example 1-example 3 and comparative example 1-comparative example 3
The breakdown voltage yield of each comparative example was low, even though the breakdown voltage yield of comparative example 1 was close to 0, mainly due to the gate breakdown voltage abnormality.
From the above results, the P-type gate enhancement type GaN-based power device prepared by the method can effectively prevent Mg atoms in the third Mg atom adsorption layer from diffusing into the AlGaN barrier layer and the GaN channel layer, reduce formation of carrier traps and leakage channels, and improve performance and reliability of the HEMT device. The second Ga atom desorption layer accurately regulates and controls the Ga atom desorption rate of the GaN material, and a laying is made for realizing efficient incorporation of Mg atoms in the third Mg atom adsorption layer. And the third Mg atom adsorption layer utilizes the surface effect to efficiently integrate Mg atoms into the GaN material on the basis of the second Ga atom desorption layer, and finally the high-quality P-type GaN semiconductor layer with flat surface and high hole concentration is obtained. Under the interaction of all sub-layers of the P type composite layer, the problems of difficult ionization and low ionization rate of acceptor impurity Mg atoms are finally solved.
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that changes and modifications may be made without departing from the principles of the invention, such changes and modifications are also intended to be within the scope of the invention.
Claims (6)
1. The P-type gate enhanced GaN-based power device is characterized by comprising a substrate, a buffer layer, a GaN voltage-resistant layer, a GaN channel layer, an AlN inserting layer, an AlGaN barrier layer and a GaN cap layer which are sequentially laminated on the substrate, wherein the surface of the GaN cap layer is provided with a source electrode, a drain electrode and a grid electrode which grows on the surface of the P-type composite layer;
the P-type composite layer comprises a plurality of first Mg atom diffusion barrier layers, second Ga atom desorption layers and third Mg atom adsorption layers which are alternately stacked and grown periodically in sequence;
in the P-type composite layer, the thickness of the first Mg atom diffusion blocking layer accounts for 70% -80%, the thickness of the second Ga atom desorption layer accounts for 10% -20%, and the thickness of the third Mg atom adsorption layer accounts for 1% -20%;
the first Mg atom diffusion barrier layer grows and precipitates by adopting the following method:
controlling the growth temperature of the reaction cavity to be 800-1100 ℃, introducing a gallium source, a nitrogen source and a magnesium source, and carrying out surface diffusion on gallium atoms and nitrogen atoms to form a first Mg atom diffusion barrier layer;
the second Ga atom desorption layer grows and precipitates by adopting the following method:
controlling the growth temperature of the reaction cavity to 1100-1400 ℃, and introducing a gallium source and a nitrogen source, wherein the introduced amount of the gallium source is gradually reduced to be closed, so as to form the second Ga atom desorption layer;
the third Mg atom adsorption layer grows and precipitates by adopting the following method:
controlling the growth temperature of the reaction cavity to be 500-800 ℃, introducing a magnesium source and a nitrogen source, and performing surface diffusion on magnesium atoms to form the third Mg atom adsorption layer.
2. The P-type gate enhancement GaN-based power device of claim 1, wherein the cycle number of said first Mg atom diffusion barrier layer, second Ga atom desorb layer and third Mg atom adsorb layer is 2-20.
3. The P-type gate enhancement GaN-based power device of claim 1, wherein said P-type composite layer has a thickness of 10nm to 200nm.
4. The P-type gate enhancement mode GaN-based power device of claim 1, wherein said P-type composite layer has a Mg doping concentration of 1 x 10 20 atoms/cm 3 -1×10 21 atoms/cm 3 。
5. A method for manufacturing a P-type gate-enhanced GaN-based power device as claimed in any one of claims 1 to 4, comprising the steps of:
preparing a substrate;
sequentially depositing a buffer layer, a GaN voltage-resistant layer, a GaN channel layer, an AlN inserting layer, an AlGaN barrier layer and a GaN cap layer on the substrate;
preparing a source electrode and a drain electrode on the surface of the GaN cap layer, depositing a P-type composite layer on the surface of the GaN cap layer, and preparing a grid electrode on the surface of the P-type composite layer;
the P-type composite layer comprises a plurality of first Mg atom diffusion blocking layers, second Ga atom desorption layers and third Mg atom adsorption layers which are alternately stacked and grown periodically in sequence.
6. An electronic device comprising the P-type gate-enhanced GaN-based power device of any of claims 1-4.
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