CN115515289A - Nanosecond pulse dielectric barrier discharge supercharging array plasma synthetic jet device - Google Patents
Nanosecond pulse dielectric barrier discharge supercharging array plasma synthetic jet device Download PDFInfo
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Abstract
Description
技术领域technical field
本发明涉及主动流动控制领域,尤其是一种采用纳秒脉冲介质阻挡放电冲击增压的阵列等离子体合成射流激励器。The invention relates to the field of active flow control, in particular to an array plasma synthetic jet exciter which adopts nanosecond pulse dielectric barrier discharge impact pressurization.
背景技术Background technique
主动流动控制技术在2010年被美国航空航天学会列为支撑全球航空领域未来发展的十大关键技术之一。该技术的核心是激励器,通过激励器诱导产生可控的扰动,可以达到改变飞行器外部流场、提升飞行器和发动机性能的目的。等离子体合成射流激励器是一种零质量流量的高强度激励器,它的基本工作原理是通过脉冲电弧迅速对半封闭腔体内部的气体间隙进行快速加热和增压,诱导射流周期性地从小孔喷出。该激励器的最高射流速度可以达到500m/s,最高工作频率超过10kHz,因而,尤其适用于高速高雷诺数下的流动控制。但是,由于单个电弧所能加热的气体区域有限,等离子体合成射流激励器的腔体尺寸一般都在5-15mm之间。对应的射流孔径一般设置在1-3mm,所能控制的流场范围极其有限。为了在大型民航客机和战斗机上应用主动流动控制技术,必须将几十甚至上百个的等离子体合成射流激励器扩展成一个阵列,才能实现0(1-10m)量级的流场控制能力。由于电弧放电具有负阻抗特性,直接将多个等离子体合成射流激励器进行并联,并不能实现阵列内部激励器的同时工作。目前,实现阵列等离子体合成射流有两类方案。一是优化电源设计,将等离子体合成射流供电电源的高压输出端分成若干个相对独立的回路;每个回路中都有一个储能装置,都可以输出一路的脉冲高压给激励器供电,最终实现阵列内部各个激励器的“同步工作”;这一类方案的典型代表是“CN105119517A,邵涛,王磊,章程,严萍,罗振兵,王林;多个等离子体合成射流激励器同步放电的高压脉冲电源”,“CN104682765A,邵涛,王磊,章程,严萍,罗振兵,王林;用于多个等离子体合成射流激励器同步放电的装置及方法”。二是进行负载匹配设计,将电阻、电容等元器件与气体放电间隙进行串并联,保证击穿前后放电回路内的电压不会显著下降;最终,高压脉冲可以顺次传递、实现阵列内部各个等离子体合成射流激励器的“依次击穿”;该类方案的典型代表是“CN110933832A,吴云,张志波,金迪,甘甜,宋慧敏,贾敏,梁华;单电源驱动阵列式等离子体合成射流流动控制装置及流动控制方法”,“CN106050593,邵涛,韩磊,罗振兵,孙鹞鸿,王林,严萍;基于Marx发生器的等离子体合成射流串联放电装置”。Active flow control technology was listed by the American Institute of Aeronautics and Astronautics in 2010 as one of the ten key technologies supporting the future development of the global aviation field. The core of this technology is the exciter, which induces controllable disturbances to achieve the purpose of changing the external flow field of the aircraft and improving the performance of the aircraft and the engine. The plasma synthetic jet actuator is a high-intensity actuator with zero mass flow rate. Its basic working principle is to quickly heat and pressurize the gas gap inside the semi-closed cavity through pulsed arc, and induce the jet to periodically flow from Small holes spray out. The maximum jet velocity of the exciter can reach 500m/s, and the maximum operating frequency exceeds 10kHz. Therefore, it is especially suitable for flow control at high speed and high Reynolds number. However, due to the limited gas area that can be heated by a single arc, the cavity size of plasma synthetic jet actuators is generally between 5-15mm. The corresponding jet aperture is generally set at 1-3mm, and the range of the flow field that can be controlled is extremely limited. In order to apply active flow control technology to large civil aviation airliners and fighter jets, dozens or even hundreds of plasma synthetic jet actuators must be expanded into an array to achieve a flow field control capability of the order of 0 (1-10m). Due to the negative impedance characteristic of arc discharge, parallel connection of multiple plasma synthetic jet exciters directly cannot realize the simultaneous work of the exciters inside the array. At present, there are two types of schemes for realizing array plasma synthetic jets. One is to optimize the power supply design, divide the high-voltage output end of the plasma synthetic jet power supply into several relatively independent circuits; each circuit has an energy storage device, which can output a pulse of high voltage to supply power to the exciter, and finally realize The "synchronous work" of each exciter inside the array; a typical representative of this type of scheme is "CN105119517A, Shao Tao, Wang Lei, Zhang Zhang, Yan Ping, Luo Zhenbing, Wang Lin; High-voltage pulses of synchronous discharge of multiple plasma synthetic jet exciters Power supply", "CN104682765A, Shao Tao, Wang Lei, Zhang Zhang, Yan Ping, Luo Zhenbing, Wang Lin; device and method for synchronous discharge of multiple plasma synthetic jet actuators". The second is to carry out load matching design, connect resistors, capacitors and other components in series and parallel with the gas discharge gap, so as to ensure that the voltage in the discharge circuit will not drop significantly before and after the breakdown; finally, high-voltage pulses can be transmitted in sequence to realize each plasma in the array. "Sequential breakdown" of solid synthetic jet actuators; a typical representative of this type of scheme is "CN110933832A, Wu Yun, Zhang Zhibo, Jin Di, Gan Tian, Song Huimin, Jia Min, Liang Hua; single power supply drive array plasma synthetic jet Flow control device and flow control method", "CN106050593, Shao Tao, Han Lei, Luo Zhenbing, Sun Yaohong, Wang Lin, Yan Ping; Plasma synthetic jet series discharge device based on Marx generator".
但是,上述两类方案在航空应用中均存在着诸多问题。第一类方案中每增加一个激励器,就需要多出一个高压储能电容和若干高压硅堆,用于大规模等离子体激励器阵列供电时电源体积庞大、价格昂贵、重量难以接受。第二类方案中的负载匹配元器件均为小功率器件,相比而言价格低廉,但是整体的接线复杂;电路工作频率由前端大容量储能电容的充电速率和第一个电极间隙击穿电压决定,脉冲频率无法实时调节,典型工作频率只有10Hz;而且受电极间隙击穿电压波动影响,脉冲的重复性差(Zhibo Zhang,Yun Wu,Min Jiaet al.The multichannel discharge plasma synthetic jet actuator,Sensors andActuators A:Physical,2017,253:112-117)。因此,如何以低成本产生高频率、高重复性的等离子体合成射流阵列是亟需解决的技术难题。However, the above two types of solutions all have many problems in aviation applications. In the first type of scheme, every time an exciter is added, an additional high-voltage energy storage capacitor and several high-voltage silicon stacks are required. When used for powering large-scale plasma exciter arrays, the power supply is bulky, expensive, and unacceptable in weight. The load matching components in the second type of scheme are all low-power devices, which are relatively cheap, but the overall wiring is complicated; the operating frequency of the circuit is determined by the charging rate of the front-end large-capacity energy storage capacitor and the breakdown of the first electrode gap Depending on the voltage, the pulse frequency cannot be adjusted in real time, and the typical operating frequency is only 10Hz; and affected by the fluctuation of the breakdown voltage of the electrode gap, the repeatability of the pulse is poor (Zhibo Zhang, Yun Wu, Min Jia et al. The multichannel discharge plasma synthetic jet actuator, Sensors and Actuators A: Physical, 2017, 253: 112-117). Therefore, how to generate a high-frequency, high-repeatability plasma synthetic jet array at low cost is a technical problem that needs to be solved urgently.
发明内容Contents of the invention
针对现有技术存在的问题,本发明提出一种纳秒脉冲介质阻挡放电增压的阵列等离子体合成射流激励器,包括:顶盖10,高压电极板20,绝缘介质板30和接地金属板40;其中Aiming at the problems existing in the prior art, the present invention proposes a nanosecond pulse dielectric barrier discharge supercharged array plasma synthetic jet actuator, including: a
顶盖10为绝缘材料制成的矩形体,上表面为方形;顶盖10的外轮廓长度和宽度需要根据实际应用做出适应性设计;顶盖10内部挖空;形成矩形内部空腔,下部开放,当与高压电极板20和绝缘介质板30配合在一起后,形成一个半封闭的、偏平的方形等离子体放电腔体,即激励器腔体105;在顶盖10的上表面,沿着垂直于壁面方向,自下而上加工若干个收敛型射流孔102,射流孔102上小下大;这些射流孔102排成N×M阵列,作为气体自上而下流入和自下而上流出激励器腔体105的喉道;位于顶盖10上表面的喉道出口101为圆形;位于激励器腔体105上表面的喉道入口103也为圆形;射流孔中心轴线垂直于顶盖10上表面,或与顶盖10的法线呈一定的角度;只要保证射流孔102下部入口面积大于上部出口面积,且自下而上、从入口到出口的截面面积是单调减小的;The
电极板20由薄片状金属板制成;电极板具有稠密的网孔状;每个射流孔阵列102的位置对应一个网孔,二者轴线重合;相邻射流孔的中心间距与相邻网孔的中心间距相同;最外圈网孔与电极板20的边缘均保持一定距离;电极板20的长宽尺寸与激励器腔体105的长宽尺寸基本相同,方便将电极板20自下而上嵌入顶盖10;The
绝缘介质板30为薄片状矩形体;绝缘介质板30在水平面上的投影与顶盖10投影重合,即二者长、宽尺寸相同;The insulating
接地金属板40为薄片状矩形体;接地金属板40在水平面上的投影与顶盖10投影重合,即绝缘介质板30、接地金属板40的长、宽尺寸均与外壳10相同;安装时,绝缘介质板30下表面与接地金属板40上表面紧密结合;外壳10、电极板20、绝缘介质板30和接地金属板40自上而下依次组装在一起,即构成激励器。The
在本发明的一个实施例中,In one embodiment of the invention,
顶盖10厚度为4-6mm;顶盖10的外轮廓长度和宽度为50mm-500mm;The thickness of the
喉道出口101直径范围为1-2mm;喉道入口103的直径范围为2-4mm;The
收敛型射流孔102的喉道长度为1-3mm;射流孔阵列102的行间距和列间距应设置为3-5倍的喉道出口直径,范围为3-15mm。The throat length of the converging
在本发明的一个具体实施例中,In a specific embodiment of the present invention,
顶盖10厚度为4mm,由尼龙、聚酰亚胺、PEEK或者陶瓷等绝缘材料制成;顶盖10的外轮廓长度和宽度为50mm*50mm;The
射流孔102的形状为截椎体,该截椎体上表面与下表面平行;The shape of the
喉道出口101直径为1.5mm;喉道入口103的直径为3mm;The
收敛型射流孔102的喉道长度为2mm。The throat length of the converging
在本发明的另一个实施例中,In another embodiment of the present invention,
电极板20厚度为0.01mm-1mm(优选0.05mm);The thickness of the
电极板20的网孔最大直径2-5mm(优选4mm)。The maximum diameter of the mesh of the
在本发明的另一个具体实施例中,In another specific embodiment of the present invention,
电极板20厚度为0.05mm;The thickness of the
电极板20的网孔最大直径4mm;The maximum diameter of the mesh of the
电极板20为稠密方格网、三角形格子网、蜂窝网、或者梳状网。The
在本发明的又一个实施例中,绝缘介质板30采用聚酰亚胺、尼龙、亚克力、PPEK、陶瓷或者云母等绝缘材料制成;当采用薄膜聚酰亚胺时,厚度范围为0.05-0.2mm;当采用其他材料时,厚度范围为0.5-2mm。In yet another embodiment of the present invention, the insulating
在本发明的再一个实施例中,接地金属板40厚度范围是2-4mm。In yet another embodiment of the present invention, the thickness of the
在本发明的还一个实施例中,激励器腔体105的深度为1-4mm;顶盖10的侧壁厚度为4-10mm。In yet another embodiment of the present invention, the depth of the
还提供一种纳秒脉冲介质阻挡放电增压的阵列等离子体合成射流装置的工作方法,该装置基于上述纳秒脉冲介质阻挡放电增压的阵列等离子体合成射流激励器,其中,高压纳秒脉冲电源50的高压输出端通过引线201与电极板20相连,接地端则通过引线401与接地金属板40相连;其特征在于,在一个射流周期内,完整的工作过程包含三个阶段:冲击增压阶段、阵列射流阶段和多孔吸气复原阶段;It also provides a working method of a nanosecond pulse dielectric barrier discharge supercharged array plasma synthetic jet device, the device is based on the nanosecond pulse dielectric barrier discharge supercharged array plasma synthetic jet actuator, wherein the high-voltage nanosecond pulse The high-voltage output end of the
step1、在冲击增压阶段,高压纳秒脉冲电源50输出一个高压脉冲、施加在电极板20上;由于电极板20的每一个边缘处均存在尖端效应、电场强度集中,因此,边缘附近最先产生放电流柱;电流柱在高压纳秒脉冲上升沿作用下,沿着电场方向不断朝外扩展,在电极边缘附近形成一个介质阻挡放电等离子体区域;在该区域内,由部分气体分子电离而来的高能电子不断轰击其他未电离气体分子,产生大量的激发态粒子;这些激发态粒子在熄灭过程中,又释放出大量的热量,在纳秒时间尺度内将等离子体区域内气体的温度加热形成高温气体;由于加热时间尺度极短,高温气体来不及膨胀,因此,等离子体区域内的压力急剧增加、诱导产生冲击波106;冲击波106从等离子体区域朝着四周传播,通过不断的反射和汇合,将整个激励器腔体105的温度和压力提升至远高于大气压的水平;至此,完成冲击增压阶段;step1, in the stage of impact boosting, the high-voltage nanosecond
step 2、在阵列射流阶段,受激励器腔体105内部的高压驱动,高温气体自内而外从收敛型射流孔102快速喷出,形成高速射流阵列60,用于超音速或者其他场合下的流动控制;射流在喷射过程中,激励器腔体105内部的压力会不断降低;当腔体105内部的压力小于等于大气压时,射流结束,激励器开始冷却,进入多孔吸气复原;Step 2. In the stage of jet array, driven by the high pressure inside the
step 3、在多孔吸气复原阶段,激励器腔体105内部开始冷却降温,对应的气体压力逐步降低;受射流喉道内外负压差作用,形成吸气流动70;具体来讲,激励器外部的常温、高密度气体从收敛型射流孔阵列102吸入到激励器腔体105的内部,与膨胀后的高温、低密度气体进行混合,使激励器复原到初始的工作状态;完全复原以后,高压纳秒脉冲电源50可以输出下一个高压脉冲,实现激励器的重频工作。Step 3. In the recovery stage of porous air suction, the interior of the
本发明基于纳秒脉冲介质阻挡放电的快速加热效应,提出了一种新型的阵列式等离子体合成射流激励器。与传统方案相比,该阵列激励器不需要复杂的负载匹配电路设计或供电电源优化设计,具有接线简单、实现成本低、易于进行大规模扩展、工作频率高、脉冲重复性好等优点。Based on the rapid heating effect of nanosecond pulse dielectric barrier discharge, the invention proposes a novel array type plasma synthetic jet exciter. Compared with traditional solutions, the array exciter does not require complex load matching circuit design or power supply optimization design, and has the advantages of simple wiring, low implementation cost, easy large-scale expansion, high operating frequency, and good pulse repeatability.
附图说明Description of drawings
图1示出阵列等离子体合成射流激励器结构,其中图1(a)示出组装图,图1(b)示出爆炸图;Fig. 1 shows the structure of the array plasma synthetic jet exciter, wherein Fig. 1(a) shows an assembly view, and Fig. 1(b) shows an exploded view;
图2示出激励器顶盖10结构,其中图2(a)示出俯视图;图2(b)示出仰视图;图2(c)示出B-B横截面视图;图2(d)示出将顶盖10底面向上放置时的立体图;Fig. 2 shows the structure of exciter
图3示出激励器三个工作阶段(A-A横截面视图),其中图3(a)示出冲击增压阶段;图3(b)示出阵列射流阶段;图3(c)示出多孔吸气恢复阶段。Figure 3 shows the three working stages of the exciter (A-A cross-sectional view), in which Figure 3(a) shows the shock boost stage; Figure 3(b) shows the array jet stage; Figure 3(c) shows the porous suction stage gas recovery phase.
附图标注说明:Notes on drawings:
0顶盖 101喉道出口 102收敛型射流孔 103喉道入口 104螺纹孔0
105激励器腔体 106冲击波 20高压电极板 201高压引线105
30绝缘介质板 301定位通孔 40接地金属板 401接地引线30 insulating
402通过孔 50高压纳秒脉冲电源 60高速射流 70吸气流动402 through
具体实施方式detailed description
图1-2为纳秒脉冲介质阻挡放电增压的阵列等离子体合成射流激励器基本结构。该激励器主要包含四个部件:顶盖10,高压电极板20,绝缘介质板30和接地金属板40。Figure 1-2 shows the basic structure of the array plasma synthetic jet actuator boosted by nanosecond pulse dielectric barrier discharge. The exciter mainly includes four parts: a
顶盖10为矩形体,上表面为方形,厚度为4-6mm(优选4mm),由尼龙、聚酰亚胺、PEEK或者陶瓷等绝缘材料制成。顶盖10的外轮廓长度和宽度需要根据实际应用做出适应性设计,典型范围为50mm-500mm,在本发明的一个优选实施例中,长、宽尺寸为50mm*50mm。顶盖10内部挖空。形成矩形内部空腔,下部开放,当与高压电极板20和绝缘介质板30配合在一起后,可以形成一个半封闭的、偏平的方形等离子体放电腔体,即激励器腔体105,具体如后详述。在顶盖10的上表面,沿着垂直于壁面方向,自下而上加工若干个收敛型射流孔102,射流孔102上小下大,在图1-2所示的具体实施例中,射流孔102的形状为截椎体,该截椎体上表面与下表面平行。这些射流孔102排成N×M阵列,作为气体自上而下流入和自下而上流出激励器腔体105的喉道。位于顶盖10上表面的喉道出口101为圆形,典型直径范围为1-2mm(优选1.5mm)。位于激励器腔体105上表面的喉道入口103(处在射流孔102下端)也为圆形,典型直径范围为2-4mm(优选3mm)。由于气体在管道内部流动时流量是守恒的,因此,设计为收敛型射流孔102可以使得气体自下而上流出激励器腔体105时获得气体加速,有助于提高等离子体合成射流的出口速度。收敛型射流孔102的喉道长度(即顶盖10上壁面厚度)会直接影响到激励器的饱和工作频率。喉道过长会导致激励器吸气时间变长、饱和工作频率降低;喉道过短,又会导致结构强度不够。综合考虑,收敛型射流孔102的喉道长度典型范围为1-3mm(优选2mm)。射流孔阵列102的行间距和列间距应设置为3-5倍的喉道出口直径,范围为3-15mm(图1-2实施案例中为5mm)。需要说明的是,收敛型射流孔102的出口除了是圆形外,还可以采用长狭缝孔、多边形孔等构型;射流孔中心轴线除了垂直于顶盖10上表面外,还可以呈一定的角度(即斜口构型)。只要保证射流孔102下部入口面积大于上部出口面积,且自下而上、从入口到出口的截面面积是单调减小的。The
电极板20由薄片状金属板制成,该金属板采用铜、银、铝等导电性能好的金属材料制成,典型厚度为0.01mm-1mm(优选0.05mm)。在图1-2示出的实施案例中,电极板具有稠密的圆形网孔状,每一个圆形网孔直径典型范围为2-5mm(优选4mm)。每个射流孔阵列102的位置对应一个圆形网孔,二者轴线重合;相邻射流孔的中心间距与相邻圆形网孔的中心间距相同,在所示的实施例中,该中心间距为5mm;最外圈圆形网孔与电极板20的边缘均保持一定距离。该网孔形状、直径、间距和排布方式并不唯一,本领域内技术人员可以根据期待的单位面积介质阻挡放电加热功率进行适当调整。此外,电极板20还可以设计成稠密方格网、三角形格子网、蜂窝网、或者梳状网等其他构型。如为方格网、三角形格子网或者蜂窝网,单个网孔的中心轴线可以与射流孔对齐,也可以不对齐,只要具备稠密和网状这两个特征,且目的是增大单位面积上的等离子体加热功率和加热均匀性,均属于本发明范畴。工艺上,电极板20可以由薄金属板作为基材,通过化学刻蚀或者激光切割方法得到相应的网格状构型;也可以通过丝网印刷、掩模刻蚀、磁控溅射等工艺将电极板20直接沉积在绝缘介质板30上,形成电极镀层。优选加工成本低廉的激光切割方法或者丝网印刷工艺。电极板20的长宽尺寸与激励器腔体105的长宽尺寸基本相同,方便将电极板20自下而上嵌入顶盖10。The
绝缘介质板30为薄片状矩形体,由绝缘材料制成,可以采用聚酰亚胺、尼龙、亚克力、PPEK、陶瓷或者云母等绝缘材料制成,绝缘介质板30用于高压绝缘,防止电极板20和接地金属板40之间形成电弧放电。绝缘介质板30在水平面上的投影与顶盖10投影重合,即二者长、宽尺寸相同。当采用薄膜聚酰亚胺时,典型厚度范围为0.05-0.2mm(优选0.2mm);当采用其他材料时,厚度典型范围为0.5-2mm(优选1mm)。The insulating
接地金属板40为薄片状矩形体,由铜、铝或者不锈钢等金属材料制成,从结构强度和原材料价格角度考虑优选不锈钢,其作用是充当纳秒脉冲介质阻挡放电的接地极。接地金属板40典型厚度范围是2-4mm,优选3mm。接地金属板40在水平面上的投影与顶盖10投影重合,即绝缘介质板30、接地金属板40的长、宽尺寸均与外壳10相同,需要本领域技术人员根据应用场合进行适应性的参数选取。安装时,绝缘介质板30下表面与接地金属板40上表面紧密结合(例如采用双面胶进行或者其他速干胶水进行粘合)。The grounding
外壳10、电极板20、绝缘介质板30和接地金属板40组装在一起,即构成了本发明中的激励器。各个部件的组装可以通过胶水粘接或者螺纹对接形式完成。在图1-2的具体实施例中,采用的是螺纹对接形式。首先,在外壳10的四个顶角上,沿着垂直方向,自下而上开有四个标准螺纹孔104;在绝缘介质板30的对应位置上开有四个定位通孔301;在接地金属板的顶角对应位置上开有四个通过孔402。然后,通过胶水将电极板20下表面粘贴在绝缘介质板30上表面。最后,使用四个螺丝,自下而上,依次穿过通过孔402、定位通孔301和螺纹孔104,实现激励器各个部件的组装配合。The
激励器腔体105的深度由竖直方向上纳秒脉冲介质阻挡放电所能够加热的气体范围决定,典型值为1-4mm(优选2mm)。激励器腔体105的深度仅仅指代内部挖空区域的高度,不包括射流孔102的高度以及电极板20的厚度。激励器腔体105的长、宽尺寸可以由顶盖10的长、宽尺寸减去顶盖侧壁的厚度得到。为了保证结构强度、方便螺纹固定,顶盖10的侧壁厚度典型范围为4-10mm,图1-2中设置为4mm。由此所得到的图1-2中激励器腔体105的长、宽尺寸分别为42mm*42mm。The depth of the
电极板20、绝缘介质板30和接地金属板40共同构成三明治类型的介质阻挡放电结构。The
电极板20通过高压引线201连接到外部纳秒脉冲高压电源上,接地金属板40通过接地引线401实现与纳秒脉冲高压电源共地连接。电源开启后,通过在稠密网孔电极板20的所有边缘处(既包含矩形外部边缘,也包括每个网孔的圆形内边缘)产生介质阻挡放电等离子体来对空气进行快速加热增压。传统的等离子体合成射流激励器采用电弧放电进行加热,能量集中在5mm左右的空气间隙内、单个脉冲能量可以达到100mJ以上。而纳秒脉冲放电等离子体的单脉冲加热能量一般为10-50mJ,平均到同样空气间隙上的能量要小很多。因此,为了满足单位面积上的加热能量需求,电极板10在外形上必须具备稠密的网状特征,以大大增加单位面积上放电等离子体的总长度和放电功率;最终达到的效果是:网状电极板的每一个边缘(既包含矩形外部边缘,也包括每个网孔的圆形内边缘)都是一个微小的快速放电加热源,紧密布置的多个快速放电加热源组合在一起,实现与传统的“电热丝”加热膜相类似的功能,从而达到对激励器腔体105内部空气进行快速、均匀加热的目的。The
下面结合图3,对纳秒脉冲介质阻挡放电冲击增压的阵列等离子体合成射流激励器工作方法进行说明。该阵列激励器的供电回路极其简单,只需要一个高压纳秒脉冲电源50即可(输出电压:10-20kV,最高重复频率:10kHz)。高压纳秒脉冲电源50的高压输出端通过引线201(未标出)与电极板20相连,接地端则通过引线401与接地金属板40相连。在一个射流周期内,完整的工作过程包含三个阶段:冲击增压阶段、阵列射流阶段和多孔吸气复原阶段。Next, with reference to FIG. 3 , the working method of the array plasma synthetic jet actuator for impingement pressurization by nanosecond pulse dielectric barrier discharge will be described. The power supply circuit of the array exciter is extremely simple, and only needs a high-voltage nanosecond pulse power supply 50 (output voltage: 10-20kV, maximum repetition rate: 10kHz). The high-voltage output end of the high-voltage nanosecond
1、在冲击增压阶段,高压纳秒脉冲电源50输出一个高压脉冲、施加在电极板20上。由于电极板20的每一个边缘处均存在尖端效应、电场强度集中,因此,边缘附近最先产生放电流柱。电流柱在高压纳秒脉冲上升沿作用下,沿着电场方向不断朝外扩展,在电极边缘附近形成一个介质阻挡放电等离子体区域。在该区域内,由部分气体分子电离而来的高能电子不断轰击其他未电离气体分子,产生大量的激发态粒子。这些激发态粒子在熄灭过程中,又释放出大量的热量,在纳秒时间尺度内将等离子体区域内气体的温度加热至1000K以上,形成高温气体。由于加热时间尺度极短,高温气体来不及膨胀,因此,等离子体区域内的压力急剧增加、诱导产生冲击波106。冲击波106从等离子体区域朝着四周传播,通过不断的反射和汇合,将整个激励器腔体105的温度和压力提升至远远高于大气压的水平。至此,完成冲击增压阶段。1. In the shock boost stage, the high-voltage nanosecond
2、在阵列射流阶段,受激励器腔体105内部的高压驱动,高温气体自内而外从收敛型射流孔102快速喷出,形成高速射流阵列60,用于超音速或者其他场合下的流动控制。射流在喷射过程中,激励器腔体105内部的压力会不断降低。当腔体105内部的压力小于等于大气压时,射流结束,激励器开始冷却,进入多孔吸气复原。2. In the jet array stage, driven by the high pressure inside the
3、在多孔吸气复原阶段,激励器腔体105内部开始冷却降温,对应的气体压力逐步降低。受射流喉道内外负压差作用,形成吸气流动70。具体来讲,激励器外部的常温、高密度气体从收敛型射流孔阵列102吸入到激励器腔体105的内部,与膨胀后的高温、低密度气体进行混合,使激励器复原到初始的工作状态。完全复原以后,高压纳秒脉冲电源50可以输出下一个高压脉冲,实现激励器的重频工作。3. In the recovery stage of porous suction, the inside of the
从以上工作原理和结构描述,不难得出,本发明在技术方案上的主要创新是采用稠密网状纳秒脉冲介质阻挡放电代替传统的脉冲电弧放电,能够实现对大面积等离子体合成射流激励器腔体的快速空间均匀加热。该方案的优点和效果体现在以下几个方面:From the above working principle and structural description, it is not difficult to conclude that the main innovation in the technical solution of the present invention is to replace the traditional pulsed arc discharge with dense network nanosecond pulse dielectric barrier discharge, which can realize the large-area plasma synthetic jet actuator The fast space of the chamber heats up evenly. The advantages and effects of this program are reflected in the following aspects:
1、成本低廉、供电简单。本方案采用的是市场上成熟的纳秒脉冲电源,不需要任何的电源改型和负载匹配电路设计。大大节省了电源研发成本,能够克服传统方案需要大体积电源和复杂连线对阵列等离子体合成射流进行供电的问题。1. Low cost and simple power supply. This solution uses a mature nanosecond pulse power supply on the market, and does not require any power supply modification and load matching circuit design. The power supply research and development cost is greatly saved, and the problem that the traditional solution requires a large-volume power supply and complicated wiring to supply power to the array plasma synthetic jet can be overcome.
2、易于扩展。由于纳秒脉冲介质阻挡放电等离子体是容性负载,没有电弧放电“负阻抗负载特性”的弊端,因此,无论是多大面积的等离子体合成射流阵列,均可以采用一个纳秒脉冲电源进行供电,易于在实际流动控制应用中根据具体需求进行激励器射流阵列面积的扩展。2. Easy to expand. Since the nanosecond pulse dielectric barrier discharge plasma is a capacitive load, there is no disadvantage of the "negative impedance load characteristic" of arc discharge. Therefore, no matter how large the area of the plasma synthetic jet array is, a nanosecond pulse power supply can be used for power supply. It is easy to expand the area of the actuator jet array according to specific needs in actual flow control applications.
3、同步精度高。与基于“顺次击穿”原理实现的阵列等离子体合成射流相比,本方案中整个电极板表面的等离子体是同时产生的,不存在任何延时,阵列内部各个射流孔的喷射严格同步。3. High synchronization precision. Compared with the array plasma synthetic jet based on the "sequential breakdown" principle, the plasma on the entire surface of the electrode plate in this scheme is generated simultaneously without any delay, and the injection of each jet hole inside the array is strictly synchronized.
4、频率高、重复性好。与基于“顺次击穿”原理实现的阵列等离子体合成射流相比,本发明中射流的喷射频率完全由高压纳秒脉冲电源50的放电频率和激励器腔体的共振频率决定,不存在前端的充电回路,也不会出现由于击穿电压波动而引起的频率不稳定现象,典型频率可以达到10kHz以上。4. High frequency and good repeatability. Compared with the array plasma synthetic jet based on the principle of "sequential breakdown", the injection frequency of the jet in the present invention is completely determined by the discharge frequency of the high-voltage nanosecond
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