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CN113316303A - Device and method for exciting plasma synthetic jet array driven by direct current arc - Google Patents

Device and method for exciting plasma synthetic jet array driven by direct current arc Download PDF

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CN113316303A
CN113316303A CN202110574889.4A CN202110574889A CN113316303A CN 113316303 A CN113316303 A CN 113316303A CN 202110574889 A CN202110574889 A CN 202110574889A CN 113316303 A CN113316303 A CN 113316303A
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synthetic jet
voltage
plasma
array
plasma synthetic
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CN113316303B (en
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宗豪华
吴云
梁华
张志波
宋慧敏
贾敏
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Air Force Engineering University of PLA
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/26Plasma torches
    • H05H1/32Plasma torches using an arc
    • H05H1/34Details, e.g. electrodes, nozzles
    • H05H1/36Circuit arrangements
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/26Plasma torches
    • H05H1/32Plasma torches using an arc
    • H05H1/34Details, e.g. electrodes, nozzles

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Abstract

提供一种直流电弧驱动的等离子体合成射流阵列同步激励装置,包含一个直流电源、一个高压脉冲发生器、两个高压硅堆、两个电阻器、一个高压电子开关Q1和若干个等离子体合成射流激励器串联在一起形成的阵列;高压脉冲发生器、高压硅堆D2和等离子体合成射流激励器阵列组成一个高压击穿回路;直流电源、电阻器R2、高压硅堆D1和激励器阵列组成了一个直流供电回路,保证放电不熄灭;直流电源、高压电子开关Q1、电阻器R1、高压硅堆D1和激励器阵列形成一个脉冲放电回路;这三个供电回路交替工作,来实现等离子体合成射流的高频工作。还提供一种直流电弧驱动的等离子体合成射流阵列同步激励方法。本发明激励装置只需要一次高压击穿过程,不使用重频高压脉冲电源。

Figure 202110574889

Provided is a DC arc-driven plasma synthetic jet array synchronous excitation device, comprising a DC power supply, a high-voltage pulse generator, two high-voltage silicon stacks, two resistors, a high-voltage electronic switch Q1 and several plasma synthetic jets The array formed by the exciters connected in series; the high voltage pulse generator, the high voltage silicon stack D2 and the plasma synthetic jet exciter array form a high voltage breakdown circuit; the DC power supply, the resistor R2, the high voltage silicon stack D1 and the exciter array form a high voltage breakdown circuit; A DC power supply circuit ensures that the discharge does not go out; the DC power supply, the high-voltage electronic switch Q1, the resistor R1, the high-voltage silicon stack D1 and the exciter array form a pulse discharge circuit; these three power supply circuits work alternately to realize the plasma synthesis jet high frequency work. Also provided is a method for synchronizing excitation of a plasma synthetic jet array driven by a DC arc. The excitation device of the present invention only needs a high-voltage breakdown process, and does not use a repeated-frequency high-voltage pulse power supply.

Figure 202110574889

Description

Device and method for exciting plasma synthetic jet array driven by direct current arc
Technical Field
The invention relates to the field of active flow control, in particular to a device and a method for exciting a plasma synthetic jet array driven by direct current arc.
Background
Lift-enhancing drag reduction is a constant theme of aircraft development. Currently, aircraft designs based on conventional layouts have reached a high level and reliance on active flow control techniques is necessary to further improve the performance of the aircraft. The heart of this technology is the exciter. The plasma synthetic jet exciter as a special active flow control exciter has the obvious advantages of high jet speed (more than 500m/s) and wide excitation frequency band (10kHz), thereby having wide application prospect in the field of active flow control. But limited by the jet aperture (1-3mm) and the volume of the chamber, the flow control range of a single plasma synthetic jet actuator is extremely limited, typically not more than 10mm along the span. In order to realize the flow separation control of the airplane flap under a large deflection angle in a space scale of tens of meters, a plurality of plasma synthetic jet actuators are required to be arranged together to form an array. Existing plasma synthetic jet array excitation generating devices can be roughly divided into two categories. One type is a series connection type Discharge circuit (Boretkij V.et al.Properties of Multi-Spark Plasma Discharge Developed for Flow control. AIAA 2016-. The other type is a parallel discharge circuit (Shatao, Wanglie, chapter, Duckweed, Rough, Wanglin. "high-voltage pulse power supply for synchronous discharge of a plurality of plasma synthetic jet actuators", application No. 201510578087.5, 2015; Shatao, Wanglie, chapter, Duckweed, Rough, Wanglin. "high-voltage pulse power supply for synchronous discharge of a plurality of plasma synthetic jet actuators", application No. 201510058090.4, 2015), that is, each actuator is connected with a high-voltage generating circuit containing a resistor, a transformer winding and other semiconductor devices. Although the parallel discharge circuit does not need a high-voltage switch, the power supply is large in size and multiple in components, and the discharge of each exciter is not strictly synchronous. In summary, how to realize high-frequency low-noise synchronous discharge of a plasma synthetic jet array by using a simple circuit is still a problem.
Disclosure of Invention
The invention provides a synchronous exciting device of a plasma synthetic jet array driven by a direct current arc, which is characterized by comprising a direct current power supply, a high-voltage pulse generator, a first high-voltage silicon stack D1, a second high-voltage silicon stack D2, a first resistor R1, a second resistor R2, a high-voltage electronic switch Q1 and a plasma synthetic jet exciter array formed by connecting a plurality of plasma synthetic jet exciters in series; wherein
The high-voltage electronic switch Q1 is connected with the first resistor R1 in series to form a series structure, and the whole series structure is connected with the second resistor R2 in parallel to form a series-parallel structure; in the two ends of the series-parallel structure, the end of a high-voltage electronic switch Q1 is connected with the positive end of a direct-current power supply, and the connecting ends of two resistors are connected with the positive end of a first high-voltage silicon stack D1; the positive end of the high-voltage pulse generator is connected with the positive end of the second high-voltage silicon stack D2, and the negative end of the second high-voltage silicon stack D2 is connected with the negative end of the first high-voltage silicon stack D1; a plurality of plasma synthetic jet actuators are connected in series to form a plasma synthetic jet actuator array; in the array, the left end of the first plasma synthetic jet actuator is connected with the negative end of a first high-voltage silicon stack D1 and the negative end of a second high-voltage silicon stack D2, and the right end of the first plasma synthetic jet actuator is connected with the left end of a second plasma synthetic jet actuator; the right end of the second plasma synthetic jet actuator is connected with the left end of the third plasma synthetic jet actuator, and the like to form an end-to-end connection structure; the right end of the Nth plasma synthetic jet actuator at the tail end of the array is grounded, and N is the number of the plasma synthetic jet actuators; the negative end of the direct current power supply and the negative end of the high-voltage pulse generator are both grounded.
In one embodiment of the invention, the plasma synthetic jet actuator consists of a cavity with a small hole and two tungsten needle electrodes which are inserted oppositely; the volume of the cavity is 50-1000mm3(ii) a The electrode spacing is 0.5-4 mm; the diameter of the outlet orifice is 1-3 mm.
In a specific embodiment of the invention, the volume of the cavity is 50mm3(ii) a The diameter of the tungsten needle electrode is 1-3 mm; the electrode spacing is 1 mm; the diameter of the outlet orifice is 2 mm.
The working process of the direct-current arc-driven plasma synthetic jet array synchronous excitation device is as follows:
the high-voltage pulse generator, the second high-voltage silicon stack D2 and the plasma synthetic jet actuator array form a high-voltage breakdown loop to realize breakdown of discharge; the direct-current power supply, the second resistor R2, the first high-voltage silicon stack D1 and the plasma synthetic jet actuator array form a direct-current power supply loop, and the direct-current power supply loop is used for maintaining an electric arc formed by the plasma synthetic jet actuator array after high-voltage breakdown, so that discharge is guaranteed not to be extinguished; the direct-current power supply, the high-voltage electronic switch Q1, the first resistor R1, the first high-voltage silicon stack D1 and the plasma synthetic jet actuator array form a pulse discharge loop which is used for periodically injecting energy into the plasma synthetic jet actuator; the three power supply loops work alternately, and the high-frequency work of the plasma synthetic jet can be realized.
The method for synchronously exciting the plasma synthetic jet array driven by the direct current arc comprises the following steps:
(1) and (B) stage A: ignition triggering phase
In the stage, the high-voltage pulse generator outputs a high-voltage pulse to be applied to the two ends of the second high-voltage silicon stack D2 and the plasma synthetic jet actuator array; when the pulse amplitude exceeds the sum of breakdown voltages corresponding to all air gaps of the plasma synthetic jet actuator, a discharge arc channel is formed between electrodes of the plasma synthetic jet actuator;
(2) and (B) stage: high energy release phase
After ignition triggering, a high-voltage electronic switch Q1 is turned on, and the plasma synthetic jet excitation array enters a stage B; at this stage, the dc power supply injects energy through the first resistor R1, the first high voltage silicon stack D1, into the arc channel between the electrodes of the plasma synthetic jet actuator; the strong discharge current enables the diameter of the electric arc to be rapidly increased and the temperature to be rapidly increased, so that the rapid pressurization of the gas in the cavity of the plasma synthetic jet actuator is realized; under the drive of the pressure difference inside and outside the cavity, jet flow is ejected from an outlet small hole of the cavity of the plasma synthetic jet actuator;
(3) and C: low energy maintenance arc stage
After the high-energy release stage is finished, the high-voltage electronic switch Q1 is closed, and the plasma synthetic jet excitation device enters a low-energy-maintenance arc stage, namely stage C; the direct current power supply, the second resistor R2, the first high-voltage silicon stack D1 and the plasma synthetic jet exciter array form a closed discharge loop; the discharge current in the circuit is only used for maintaining the arc channel not to be extinguished, and the heating effect on the gas can be ignored; under the action of natural cooling, the temperature and pressure of gas in the cavity of the plasma synthetic jet actuator begin to be slowly reduced, and the external ambient atmosphere is sucked into the plasma synthetic jet actuator again through the small outlet hole, so that the cavity is restored to the initial state;
(4) alternating phases B/C: high frequency jet generation stage
Since the arc does not extinguish after a complete duty cycle, the high-voltage electronic switch Q1 is alternately turned on and off, i.e., phases B and C are repeatedly entered, to generate a high-frequency pulsed jet.
In one particular embodiment of the invention, in phase a: the amplitude of the high-voltage pulse output by the high-voltage pulse generator is more than 20kV, and the pulse width is not limited.
In another embodiment of the invention, in stage B: the first resistor R1 is of the order of 100 omega in resistance.
In yet another embodiment of the present invention, in stage C: the second resistor R2 is of the order of 100k omega in resistance.
The invention can realize the one-time ignition and high-frequency work of the exciter array, overcomes the defects of large electromagnetic interference, high cost and large power supply volume of the traditional exciter, and has important significance for promoting the engineering application of active flow control.
In addition, in the method, the multi-path electric arc of the plasma synthetic jet array is not extinguished, so that only one-time high-voltage breakdown is needed, and the problem of strong electromagnetic interference caused by high-frequency high-voltage pulse in the repeated breakdown process is overcome.
The traditional excitation device needs to frequently puncture the air gap, and electromagnetic interference is large. The excitation device only needs one high-voltage breakdown process, and has small electromagnetic interference.
The traditional excitation device is limited by the highest repeated working frequency of a high-voltage pulse power supply, and the discharge frequency is generally below 5 kHz. The exciting device of the invention does not need to use a repetition frequency high-voltage pulse power supply, and the working frequency of the exciter array is determined by a high-voltage electronic switch Q1 and can reach 50 kHz.
The high-voltage pulse generator can be realized by an ignition power supply with low price, and is good in economical efficiency.
Drawings
FIG. 1 illustrates a DC arc driven plasma synthetic jet array excitation device;
FIG. 2 shows a schematic diagram of a plasma synthetic jet array discharge waveform;
fig. 3 shows three phases of operation of the plasma synthetic jet array.
Detailed Description
FIG. 1 shows a DC arc driven plasma synthetic jet array excitation device of the present invention. The device mainly comprises a direct current power supply (the voltage is in the 1000V magnitude), a high-voltage pulse generator (the pulse voltage is 20-30kV), two high-voltage silicon stacks (D1 and D2), two resistors (R1 and R2), a high-voltage electronic switch Q1 and a plurality of plasma synthetic jet actuators which are connected in series to form an array. The high-voltage electronic switch Q1 and the first resistor R1 are connected in series to form a series structure, and the whole series structure is connected in parallel with the second resistor R2 to form a series-parallel structure; in the two ends of the series-parallel structure, the end of a high-voltage electronic switch Q1 is connected with the positive end of a direct-current power supply, and the connecting ends of two resistors are connected with the positive end of a first high-voltage silicon stack D1. The positive end of the high-voltage pulse generator is connected with the positive end of the second high-voltage silicon stack D2, and the negative end of the second high-voltage silicon stack D2 is connected with the negative end of the first high-voltage silicon stack D1. A plurality of plasma synthetic jet actuators are connected in series to form an array of plasma synthetic jet actuators. In the array, the left end of the first plasma synthetic jet actuator is connected with the negative end of a first high-voltage silicon stack D1 and the negative end of a second high-voltage silicon stack D2, and the right end of the first plasma synthetic jet actuator is connected with the left end of a second plasma synthetic jet actuator; the right end of the second plasma synthetic jet actuator is connected with the left end of the third plasma synthetic jet actuator, and the like to form an end-to-end connection structure; the right end of the Nth plasma synthetic jet actuator at the tail end of the array is grounded, and N is the number of the plasma synthetic jet actuators. The negative end of the direct current power supply and the negative end of the high-voltage pulse generator are both grounded.
Each plasma synthetic jet actuator consists of a cavity with a small hole and two tungsten needle electrodes inserted oppositely (religious, songhuomin, traghua, jiamin, lisheng, nanosecond pulsed plasma synthetic jet characteristic experimental research [ J]. Push-in technique, 2015, (10): 1474-1478. ). The volume of the cavity is about 50-1000mm3Preferably 50mm in view of heating efficiency3. The diameter of the tungsten needle electrode is 1 to 3mm, and 2mm is preferable in view of ablation resistance. The electrode spacing is in the range of 0.5-4mm, preferably 1mm for ease of discharge breakdown. The diameter of the outlet orifice is 1-3mm, preferably 2 mm.
The high-voltage pulse generator, the second high-voltage silicon stack D2 and the plasma synthetic jet actuator array form a high-voltage breakdown loop to realize breakdown of discharge. The direct-current power supply, the second resistor R2, the first high-voltage silicon stack D1 and the plasma synthetic jet actuator array form a direct-current power supply loop, and the direct-current power supply loop is used for maintaining an electric arc formed by the plasma synthetic jet actuator array after high-voltage breakdown, and ensuring that discharge is not extinguished. The direct current power supply, the high voltage electronic switch Q1, the first resistor R1, the first high voltage silicon stack D1, and the plasma synthetic jet actuator array form a pulsed discharge circuit for periodically injecting energy into the plasma synthetic jet actuator. The three power supply loops work alternately, and the high-frequency work of the plasma synthetic jet can be realized.
Fig. 2 shows the discharge waveform of the plasma synthetic jet actuator array during high frequency operation. The whole discharge waveform can be divided into A, B and C three stages. The plasma synthetic jet actuator operating state for each stage is shown in fig. 3. The operation of the excitation device of fig. 1 will now be described with reference to fig. 2 and 3.
A DC arc driven plasma synthetic jet array exciting device and method specifically comprise the following steps:
(1) the ignition trigger phase (phase a).
At this stage, the high voltage pulse generator outputs a high voltage pulse (amplitude > 20kV, pulse width unlimited) to be applied across the second high voltage silicon stack D2 and the plasma synthetic jet actuator array. When the pulse amplitude exceeds the sum of the breakdown voltages corresponding to all air gaps of the plasma synthetic jet actuator, a discharge arc channel is formed between the electrodes of the plasma synthetic jet actuator, corresponding to the current spike in fig. 2.
(2) High energy release phase (phase B).
After the ignition is triggered, the high voltage electronic switch Q1 is turned on, and the plasma synthetic jet excitation array enters a high energy release phase (phase B). At this stage, the dc power supply injects energy into the arc channel between the electrodes of the plasma synthetic jet actuator through the first resistor R1 (for example, with a resistance value of the order of 100 Ω) and the first high voltage silicon stack D1, and the discharge current is of the order of 10A. The strong discharge current enables the diameter of the electric arc to be rapidly increased and the temperature to be rapidly increased, so that the rapid pressurization of the gas in the cavity of the plasma synthetic jet exciter is realized. The jet is ejected from the small outlet hole of the cavity of the plasma synthetic jet exciter by the driving of the pressure difference between the inner and the outer parts of the cavity.
(3) Low energy pilot arc stage (stage C).
After the high-energy release stage is finished, the high-voltage electronic switch Q1 is closed, and the plasma synthetic jet excitation device enters a low-energy-maintenance arc stage, namely stage C. The dc power supply, the second resistor R2 (e.g., having a resistance on the order of 100k Ω), the first high voltage silicon stack D1, and the array of plasma synthetic jet actuators form a closed discharge circuit. The discharge current in the circuit is only 10mA magnitude, which is only used for maintaining the arc channel not to be extinguished, and the heating effect on the gas can be ignored. Under the action of natural cooling, the temperature and pressure of the gas in the cavity of the plasma synthetic jet actuator begin to be slowly reduced, and the external ambient atmosphere is sucked into the plasma synthetic jet actuator again through the small outlet hole, so that the cavity is restored to the initial state.
(4) High frequency jet generation phase (phase B/C alternating)
Since the arc does not extinguish after a full duty cycle, alternating the high voltage electronic switch Q1 on and off (i.e., the exciter repeats phases B and C), a high frequency pulsed jet is produced.
The core of the invention is that a low-energy-maintenance arc loop is arranged in the exciting device, so that the arc is kept in a non-extinguishing state all the time in the working process of the plasma synthetic jet exciter array, and the aims of one-time breakdown and high-frequency working are fulfilled. The high-voltage electronic switch can be selected from IGBT or MOSFET.

Claims (8)

1.一种直流电弧驱动的等离子体合成射流阵列同步激励装置,其特征在于,包含直流电源、高压脉冲发生器、第一高压硅堆D1、第二高压硅堆D2、第一电阻器R1、第二电阻器R2、高压电子开关Q1,以及多个等离子体合成射流激励器串联在一起形成的等离子体合成射流激励器阵列;其中1. A plasma synthetic jet array synchronous excitation device driven by a DC arc, characterized in that, comprising a DC power supply, a high-voltage pulse generator, the first high-voltage silicon stack D1, the second high-voltage silicon stack D2, the first resistor R1, The second resistor R2, the high-voltage electronic switch Q1, and a plasma synthetic jet exciter array formed by connecting a plurality of plasma synthetic jet exciters in series; wherein 高压电子开关Q1与第一电阻器R1相串联形成串联结构,该串联结构再整体与第二电阻器R2相并联,形成串并结构;该串并结构的两端中,高压电子开关Q1端与直流电源正端相连,两个电阻器连接端与第一高压硅堆D1的正端相连;高压脉冲发生器正端接第二高压硅堆D2的正端,第二高压硅堆D2的负端与第一高压硅堆D1的负端相连接;多个等离子体合成射流激励器串联在一起形成等离子体合成射流激励器阵列;在该阵列中,第一等离子体合成射流激励器的左端与第一高压硅堆D1负端、第二高压硅堆D2负端相连,右端与第二等离子体合成射流激励器的左端相连;第二等离子体合成射流激励器右端与第三等离子体合成射流激励器左端相连...诸如此类,构成首尾相接结构;阵列末尾第N等离子体合成射流激励器的右端接地,N为等离子体合成射流激励器个数;直流电源负端、高压脉冲发生器负端均接地。The high-voltage electronic switch Q1 is connected in series with the first resistor R1 to form a series structure, and the series structure is connected in parallel with the second resistor R2 as a whole to form a series-parallel structure; among the two ends of the series-parallel structure, the high-voltage electronic switch Q1 terminal is connected to the second resistor R2. The positive terminal of the DC power supply is connected to the positive terminal of the first high-voltage silicon stack D1; the positive terminal of the high-voltage pulse generator is connected to the positive terminal of the second high-voltage silicon stack D2, and the negative terminal of the second high-voltage silicon stack D2 Connected with the negative end of the first high-voltage silicon stack D1; a plurality of plasma synthetic jet exciters are connected in series to form a plasma synthetic jet exciter array; in the array, the left end of the first plasma synthetic jet exciter is connected to the first plasma synthetic jet exciter The negative end of a high-voltage silicon stack D1 is connected to the negative end of the second high-voltage silicon stack D2, and the right end is connected to the left end of the second plasma synthetic jet exciter; the right end of the second plasma synthetic jet exciter is connected to the third plasma synthetic jet exciter The left ends are connected...and so on, forming an end-to-end structure; the right end of the Nth plasma synthetic jet exciter at the end of the array is grounded, and N is the number of plasma synthetic jet exciters; the negative end of the DC power supply and the negative end of the high-voltage pulse generator are both ground. 2.如权利要求1所述的直流电弧驱动的等离子体合成射流阵列同步激励装置,其特征在于,等离体合成射流激励器由开有小孔的腔体和两根对插的钨针电极组成;腔体的体积为50-1000mm3;电极间距为0.5-4mm;出口小孔的直径为1-3mm。2. The DC arc-driven plasma synthetic jet array synchronous excitation device as claimed in claim 1, wherein the plasma synthetic jet exciter consists of a cavity with a small hole and two tungsten needle electrodes that are inserted in pairs composition; the volume of the cavity is 50-1000mm 3 ; the electrode spacing is 0.5-4mm; the diameter of the outlet hole is 1-3mm. 3.如权利要求2所述的直流电弧驱动的等离子体合成射流阵列同步激励装置,其特征在于,腔体的体积为50mm3;钨针电极的直径为1-3mm;电极间距为1mm;出口小孔的直径为2mm。3. The plasma synthesis jet array synchronous excitation device driven by DC arc as claimed in claim 2, wherein the volume of the cavity is 50mm 3 ; the diameter of the tungsten needle electrode is 1-3mm; the electrode spacing is 1mm; The diameter of the small hole is 2mm. 4.如权利要求1所述的直流电弧驱动的等离子体合成射流阵列同步激励装置,其特征在于,工作过程如下:4. The plasma synthesis jet array synchronous excitation device driven by DC arc as claimed in claim 1, is characterized in that, the working process is as follows: 高压脉冲发生器、第二高压硅堆D2和等离子体合成射流激励器阵列组成高压击穿回路,实现放电的击穿;直流电源、第二电阻器R2、第一高压硅堆D1和等离子体合成射流激励器阵列组成直流供电回路,用于维持等离子体合成射流激励器阵列在高电压击穿后形成的电弧,保证放电不熄灭;直流电源、高压电子开关Q1、第一电阻器R1、第一高压硅堆D1和等离子体合成射流激励器阵列形成脉冲放电回路,用于周期性地给等离子体合成射流激励器注入能量;这三个供电回路交替工作,能够实现等离子体合成射流的高频工作。The high-voltage pulse generator, the second high-voltage silicon stack D2 and the plasma synthesis jet exciter array form a high-voltage breakdown circuit to realize the breakdown of the discharge; the DC power supply, the second resistor R2, the first high-voltage silicon stack D1 and the plasma synthesis The jet exciter array forms a DC power supply circuit, which is used to maintain the arc formed by the plasma synthetic jet exciter array after the high voltage breakdown, and ensure that the discharge is not extinguished; the DC power supply, the high-voltage electronic switch Q1, the first resistor R1, the first The high-voltage silicon stack D1 and the plasma synthetic jet exciter array form a pulse discharge circuit, which is used to periodically inject energy into the plasma synthetic jet exciter; these three power supply loops work alternately, which can realize the high-frequency operation of the plasma synthetic jet . 5.一种直流电弧驱动的等离子体合成射流阵列同步激励方法,其特征在于,具体包括下列步骤:5. A synchronous excitation method for plasma synthesis jet array driven by a DC arc, characterized in that it specifically comprises the following steps: (1)阶段A:点火触发阶段(1) Stage A: ignition trigger stage 在该阶段,高压脉冲发生器输出一个高压脉冲施加在第二高压硅堆D2和等离子体合成射流激励器阵列两端;当脉冲幅值超过等离子体合成射流激励器的所有空气间隙对应的击穿电压之和时,等离子体合成射流激励器的电极之间形成放电电弧通道;At this stage, the high-voltage pulse generator outputs a high-voltage pulse applied to both ends of the second high-voltage silicon stack D2 and the plasma synthetic jet exciter array; when the pulse amplitude exceeds the breakdown corresponding to all the air gaps of the plasma synthetic jet exciter When the voltage is summed, a discharge arc channel is formed between the electrodes of the plasma synthetic jet exciter; (2)阶段B:高能释放阶段(2) Stage B: High-energy release stage 点火触发后,高压电子开关Q1打开,等离子体合成射流激励阵列进入阶段B;在该阶段,直流电源通过第一电阻器R1、第一高压硅堆D1向等离子体合成射流激励器的电极之间的电弧通道注入能量;强放电电流使得电弧直径迅速增大、温度急剧升高,实现对等离子体合成射流激励器的腔体内气体的快速增压;在腔体内外压差的驱动,射流从等离子体合成射流激励器腔体的出口小孔喷出;After the ignition is triggered, the high-voltage electronic switch Q1 is turned on, and the plasma synthesis jet excitation array enters stage B; in this stage, the DC power supply passes between the electrodes of the plasma synthesis jet exciter through the first resistor R1 and the first high-voltage silicon stack D1. The arc channel injects energy; the strong discharge current causes the arc diameter to increase rapidly and the temperature to rise sharply, realizing rapid pressurization of the gas in the cavity of the plasma synthetic jet exciter; driven by the pressure difference between the inside and outside of the cavity, the jet flows from the plasma The outlet orifice of the cavity of the body synthetic jet exciter is ejected; (3)阶段C:低能维弧阶段(3) Stage C: low-energy dimension arc stage 高能释放阶段结束后,高压电子开关Q1关闭,等离子体合成射流激励装置进入低能维弧阶段,即阶段C;直流电源、第二电阻器R2、第一高压硅堆D1和等离子体合成射流激励器阵列构成闭合的放电回路;电路中的放电电流仅供维持电弧通道的不熄灭,对于气体的加热效应能够忽略;受自然冷却作用,等离子体合成射流激励器的腔体内气体温度和压力开始缓慢降低,外部环境大气通过出口小孔重新吸入等离子体合成射流激励器,使腔体复原到初始状态;After the high-energy release stage is over, the high-voltage electronic switch Q1 is turned off, and the plasma synthetic jet excitation device enters the low-energy dimension arc stage, namely stage C; the DC power supply, the second resistor R2, the first high-voltage silicon stack D1 and the plasma synthetic jet exciter The array forms a closed discharge loop; the discharge current in the circuit is only to keep the arc channel unextinguished, and the heating effect on the gas can be ignored; due to natural cooling, the gas temperature and pressure in the cavity of the plasma synthetic jet exciter begin to slowly decrease , the external ambient atmosphere is re-injected into the plasma synthetic jet exciter through the outlet hole, so that the cavity is restored to the initial state; (4)阶段B/C交替:高频射流产生阶段(4) Stage B/C alternation: high frequency jet generation stage 由于电弧在一个完整工作周期后并未熄灭,因此交替打开和关闭高压电子开关Q1,即重复进入阶段B和C,即可产生高频的脉冲射流。Since the arc is not extinguished after a complete working cycle, the high-voltage electronic switch Q1 is turned on and off alternately, that is, repeatedly entering stages B and C, and a high-frequency pulsed jet can be generated. 6.如权利要求5所述的直流电弧驱动的等离子体合成射流阵列同步激励方法,其特征在于,在阶段A:高压脉冲发生器输出的高压脉冲的幅值>20kV,脉宽不限。6 . The DC arc-driven plasma synthesis jet array synchronous excitation method according to claim 5 , wherein, in stage A: the amplitude of the high-voltage pulse output by the high-voltage pulse generator is greater than 20kV, and the pulse width is not limited. 7 . 7.如权利要求5所述的直流电弧驱动的等离子体合成射流阵列同步激励方法,其特征在于,在阶段B:第一电阻器R1阻值为100Ω量级。7 . The method for synchronous excitation of a plasma synthetic jet array driven by a DC arc according to claim 5 , wherein, in stage B: the resistance value of the first resistor R1 is in the order of 100Ω. 8 . 8.如权利要求5所述的直流电弧驱动的等离子体合成射流阵列同步激励方法,其特征在于,在阶段C:第二电阻器R2阻值为100kΩ量级。8 . The DC arc-driven plasma synthesis jet array synchronous excitation method according to claim 5 , wherein, in stage C: the resistance value of the second resistor R2 is in the order of 100kΩ. 9 .
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