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CN115249681A - Thin film flip chip packaging structure - Google Patents

Thin film flip chip packaging structure Download PDF

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Publication number
CN115249681A
CN115249681A CN202110667331.0A CN202110667331A CN115249681A CN 115249681 A CN115249681 A CN 115249681A CN 202110667331 A CN202110667331 A CN 202110667331A CN 115249681 A CN115249681 A CN 115249681A
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circuit layer
package structure
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沈弘哲
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Chipmos Technologies Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838Geometry or layout
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/14Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/145Organic substrates, e.g. plastic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Structure Of Printed Boards (AREA)
  • Wire Bonding (AREA)

Abstract

本发明提供一种薄膜覆晶封装结构,包括可挠性基板、第一线路层、第二线路层以及芯片。可挠性基板具有相对的第一表面与第二表面以及位于第一表面的芯片覆盖区,其中芯片覆盖区沿长边方向划分成第一侧边区、中央区及第二侧边区。可挠性基板包括分别对应第一侧边区、中央区及第二侧边区的第一区、第二区与第三区。第一线路层与第二线路层分别位于第一表面与第二表面上。芯片配置于芯片覆盖区并接合第一线路层。第二线路层的线路铺设面积与第一线路层的线路铺设面积的比值在第一区内与第三区内是介于0.9至1.2之间。

Figure 202110667331

The present invention provides a film-on-chip packaging structure, comprising a flexible substrate, a first circuit layer, a second circuit layer and a chip. The flexible substrate has opposite first and second surfaces and a chip coverage area located on the first surface, wherein the chip coverage area is divided into a first side area, a central area and a second side area along the longitudinal direction. The flexible substrate includes a first area, a second area and a third area respectively corresponding to the first side area, the central area and the second side area. The first circuit layer and the second circuit layer are respectively located on the first surface and the second surface. The chip is disposed in the chip coverage area and is bonded to the first circuit layer. The ratio of the line laying area of the second line layer to the line laying area of the first line layer is between 0.9 and 1.2 in the first zone and the third zone.

Figure 202110667331

Description

薄膜覆晶封装结构Chip-on-Film Package Structure

技术领域technical field

本发明涉及一种封装结构,尤其涉及一种薄膜覆晶封装结构。The invention relates to a packaging structure, in particular to a film-on-chip packaging structure.

背景技术Background technique

随着电子产品功能需求越来越多,芯片的集成电路密集度不断提高,薄膜覆晶封装结构的可挠性线路载板上的引脚数量也必须跟着增加,原本广泛使用的单面线路可挠性基板的布线难度越来越高,因此,可挠性线路载板开始朝向双面线路的方式设计。With the increasing functional requirements of electronic products and the continuous improvement of the integrated circuit density of chips, the number of pins on the flexible circuit carrier board of the film-on-chip package structure must also increase. The single-sided circuit that was widely used can be The wiring of flexible substrates is becoming more and more difficult. Therefore, flexible circuit carriers are beginning to be designed in a way of double-sided circuits.

进一步而言,可挠性线路载板在双面线路的设计下,不同材料之间(例如可挠性基板所使用的可挠性材料和线路层所使用的金属材料)的热膨胀系数(coefficient ofthermal expansion,CTE)不匹配(mismatch)在二个相对表面上所产生的热应力大小会取决于线路层的铺设面积尺寸,当二个相对表面上的线路铺设面积差异越大,应力不平均的情况也越严重,导致可挠性基板产生变形、翘曲(warpage)。当薄膜覆晶封装结构以热压(thermocompression)方式进行内引脚接合(Inner Lead Bonding,ILB)工艺时,高温对于芯片覆盖区产生的热效应尤其明显,因此可挠性基板在这个区域内因热应力不平均导致的翘曲变形情况会更为严重,进一步也可能导致引脚接合不良、剥离(peeling)或断裂的问题。Further, under the double-sided circuit design of the flexible circuit carrier, the coefficient of thermal expansion between different materials (such as the flexible material used in the flexible substrate and the metal material used in the circuit layer) Expansion, CTE) mismatch (mismatch) The thermal stress generated on the two opposite surfaces will depend on the size of the laying area of the circuit layer. When the difference between the laying areas of the two opposite surfaces is greater, the stress is uneven. The more serious it is, the deformation and warpage of the flexible substrate are caused. When the film-on-chip package structure is subjected to the Inner Lead Bonding (ILB) process by means of thermocompression, the thermal effect of high temperature on the chip footprint is particularly obvious, so the flexible substrate is affected by thermal stress in this area. The warpage deformation caused by unevenness will be more serious, and it may further lead to the problem of poor pin bonding, peeling (peeling) or breakage.

发明内容SUMMARY OF THE INVENTION

本发明提供一种薄膜覆晶封装结构,其可以改善可挠性基板翘曲变形及引脚接合不良、剥离或断裂的问题,进而提升其可靠度。The present invention provides a film-on-chip package structure, which can improve the warpage deformation of the flexible substrate and the problems of poor pin bonding, peeling or breakage, thereby improving its reliability.

本发明的一种薄膜覆晶封装结构,包括可挠性基板、第一线路层、第二线路层以及芯片。可挠性基板具有相对的第一表面与第二表面以及位于第一表面的芯片覆盖区,其中芯片覆盖区沿长边方向划分成第一侧边区、中央区及第二侧边区。可挠性基板包括分别对应第一侧边区、中央区及第二侧边区的第一区、第二区与第三区。第一线路层与第二线路层分别位于第一表面与第二表面上。芯片配置于芯片覆盖区并接合第一线路层。第二线路层的线路铺设面积与第一线路层的线路铺设面积的比值在第一区内与第三区内是介于0.9至1.2之间。A film-on-chip packaging structure of the present invention includes a flexible substrate, a first circuit layer, a second circuit layer and a chip. The flexible substrate has opposite first and second surfaces and a chip coverage area located on the first surface, wherein the chip coverage area is divided into a first side area, a central area and a second side area along the longitudinal direction. The flexible substrate includes a first area, a second area and a third area respectively corresponding to the first side area, the central area and the second side area. The first circuit layer and the second circuit layer are respectively located on the first surface and the second surface. The chip is disposed in the chip coverage area and is bonded to the first circuit layer. The ratio of the line laying area of the second line layer to the line laying area of the first line layer is between 0.9 and 1.2 in the first zone and the third zone.

在本发明的一实施例中,上述的第一侧边区在长边方向上的长度与第二侧边区在长边方向上的长度分别为芯片覆盖区的长边长度的1/4至1/6。In an embodiment of the present invention, the length of the first side region in the longitudinal direction and the length of the second side region in the longitudinal direction are respectively 1/4 to 1/4 of the long side length of the chip coverage area. 1/6.

在本发明的一实施例中,上述的第一侧边区在长边方向上的长度与第二侧边区在长边方向上的长度分别为芯片覆盖区的长边长度的1/5。In an embodiment of the present invention, the length of the first side region in the longitudinal direction and the length of the second side region in the longitudinal direction are respectively 1/5 of the length of the long side of the chip coverage area.

在本发明的一实施例中,上述的芯片覆盖区外扩一距离而构成第一区、第二区与第三区的边缘。In an embodiment of the present invention, the above-mentioned chip coverage area is expanded by a distance to form the edges of the first area, the second area and the third area.

在本发明的一实施例中,上述的边缘与芯片覆盖区之间包括围绕第一侧边区的三边的第一外扩区,邻接中央区的相对两边的第二外扩区与围绕第二侧边区的三边的第三外扩区,其中第一区包括第一侧边区与第一外扩区,第二区包括中央区与第二外扩区,第三区包括第二侧边区与第三外扩区。In an embodiment of the present invention, the edge and the chip coverage area include a first expansion area surrounding three sides of the first side area, a second expansion area adjacent to two opposite sides of the central area and a second expansion area surrounding the first side area. The third outer expansion area on the three sides of the two side areas, wherein the first area includes the first side area and the first outer expansion area, the second area includes the central area and the second outer expansion area, and the third area includes the second outer expansion area. The side area and the third expansion area.

在本发明的一实施例中,上述的距离为芯片覆盖区的长边长度的1/8至1/12。In an embodiment of the present invention, the above-mentioned distance is 1/8 to 1/12 of the length of the long side of the chip coverage area.

在本发明的一实施例中,上述的距离为芯片覆盖区的长边长度的1/10。In an embodiment of the present invention, the above-mentioned distance is 1/10 of the length of the long side of the chip coverage area.

在本发明的一实施例中,上述的距离为400微米。In an embodiment of the present invention, the above-mentioned distance is 400 microns.

在本发明的一实施例中,上述的第二线路层的线路铺设面积与第一线路层的线路铺设面积的比值在第二区内是不大于1.5。In an embodiment of the present invention, the ratio of the above-mentioned line laying area of the second line layer to the line laying area of the first line layer is not greater than 1.5 in the second area.

在本发明的一实施例中,上述的芯片通过多个凸块接合第一线路层。In an embodiment of the present invention, the above-mentioned chip is bonded to the first circuit layer through a plurality of bumps.

基于上述,本发明的薄膜覆晶封装结构在封装工艺(例如内引脚接合工艺)中,可挠性基板的芯片覆盖区所承受的热效应最为强烈,特别是在对应芯片两侧边处的翘曲变形量又较对应芯片中央处的翘曲变形量来得大,因此将可挠性基板上的线路布局设计为第二线路层的线路铺设面积与第一线路层的线路铺设面积的比值在对应芯片两侧边处的第一区内与第三区内是介于0.9至1.2之间,以使可挠性基板的相对二个表面上的线路铺设面积比例相近,因此可以避免可挠性基板因相对二个表面的热膨胀系数不匹配幅度差异产生的应力不平均所导致的翘曲变形,进而改善引脚接合不良、剥离或断裂的问题,提升薄膜覆晶封装结构的可靠度。Based on the above, in the packaging process (such as the internal pin bonding process) of the film-on-chip packaging structure of the present invention, the chip coverage area of the flexible substrate is most affected by the thermal effect, especially the warping at the two sides of the corresponding chip. The amount of warpage is larger than that at the center of the corresponding chip. Therefore, the circuit layout on the flexible substrate is designed to be the ratio of the circuit laying area of the second circuit layer to the circuit laying area of the first circuit layer. The first area and the third area on both sides of the chip are between 0.9 and 1.2, so that the ratio of the laying area of the lines on the two opposite surfaces of the flexible substrate is similar, so the flexible substrate can be avoided. The warpage deformation caused by the uneven stress caused by the difference in the thermal expansion coefficients of the two surfaces, thereby improving the problems of poor pin bonding, peeling or cracking, and improving the reliability of the film-on-chip package structure.

为让本发明的上述特征和优点能更明显易懂,下文特举实施例,并配合附图作详细说明如下。In order to make the above-mentioned features and advantages of the present invention more obvious and easy to understand, the following embodiments are given and described in detail with the accompanying drawings as follows.

附图说明Description of drawings

图1A是依照本发明一实施例的薄膜覆晶封装结构的部分俯视示意图;FIG. 1A is a partial top schematic view of a chip on film package structure according to an embodiment of the present invention;

图1B是图1A中的区域B的局部放大图;Fig. 1B is a partial enlarged view of region B in Fig. 1A;

图2A是依照本发明一实施例的薄膜覆晶封装结构的部分仰视示意图;2A is a schematic bottom view of a portion of a chip on film package structure according to an embodiment of the present invention;

图2B是图2A中的区域C的局部放大图;Fig. 2B is a partial enlarged view of region C in Fig. 2A;

图3是图1A的薄膜覆晶封装结构沿着A-A线的剖面示意图。FIG. 3 is a schematic cross-sectional view of the chip on film package structure of FIG. 1A along the line A-A.

应说明的是,图1A与图1B中的芯片、凸块与防焊层采用透视绘法呈现,并且省略示出封装胶体。图2A与图2B中的防焊层亦采用透视绘法呈现。It should be noted that the chips, bumps and solder mask in FIG. 1A and FIG. 1B are represented by perspective drawing, and the encapsulation compound is omitted. The solder mask layers in FIGS. 2A and 2B are also represented by perspective drawing.

具体实施方式Detailed ways

现将详细地参考本发明的示范性实施例,示范性实施例的实例说明于附图中。只要有可能,相同元件符号在附图和描述中用来表示相同或相似部分。Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numerals are used in the drawings and description to refer to the same or like parts.

本文所使用的方向用语(例如,上、下、右、左、前、后、顶部、底部)仅作为参看所绘附图使用且不意欲暗示绝对定向。Directional terms (eg, top, bottom, right, left, front, back, top, bottom) as used herein are used only for reference to the drawings and are not intended to imply absolute orientation.

参照本实施例的附图以更全面地阐述本发明。然而,本发明亦可以各种不同的形式体现,而不应限于本文中所述的实施例。附图中的层或区域的厚度、尺寸或大小会为了清楚起见而放大。相同或相似的参考号码表示相同或相似的元件,以下段落将不再一一赘述。The present invention will be more fully explained with reference to the accompanying drawings of this embodiment. However, the present invention may be embodied in various forms and should not be limited to the embodiments described herein. The thicknesses, dimensions or dimensions of layers or regions in the drawings may be exaggerated for clarity. The same or similar reference numerals denote the same or similar elements, and the detailed description in the following paragraphs will not be repeated.

图1A是依照本发明一实施例的薄膜覆晶封装结构的部分俯视示意图。图1B是图1A中的区域B的局部放大图。图2A是依照本发明一实施例的薄膜覆晶封装结构的部分仰视示意图。图2B是图2A中的区域C的局部放大图。图3是图1A的薄膜覆晶封装结构沿着A-A线的剖面示意图。请参考图1至图3,在本实施例中,薄膜覆晶封装结构100包括可挠性基板110、第一线路层120、第二线路层130以及芯片140,其中可挠性基板110具有相对的第一表面110a与第二表面110b以及位于第一表面110a的芯片覆盖区112。进一步而言,芯片覆盖区112可以包括相对的二个长边112L与相对的二个短边112S,而芯片覆盖区112沿长边方向D划分成邻接二个短边112S的其中一者的第一侧边区1121、中央区1122及邻接二个短边112S的另外一者的第二侧边区1123,其中可挠性基板110包括分别对应第一侧边区1121、中央区1122及第二侧边区1123的第一区R1、第二区R2与第三区R3。另一方面,第一线路层120与第二线路层130分别位于第一表面110a与第二表面110b上,而芯片140配置于芯片覆盖区112并接合第一线路层120。举例而言,芯片140通过多个凸块142接合并电性连接至第一线路层120,但本发明不限于此。FIG. 1A is a partial top schematic view of a chip on film package structure according to an embodiment of the present invention. FIG. 1B is a partial enlarged view of area B in FIG. 1A . FIG. 2A is a schematic bottom view of a portion of a chip on film package structure according to an embodiment of the present invention. FIG. 2B is a partial enlarged view of area C in FIG. 2A . FIG. 3 is a schematic cross-sectional view of the chip on film package structure of FIG. 1A along the line A-A. Please refer to FIG. 1 to FIG. 3 , in this embodiment, the chip on film package structure 100 includes a flexible substrate 110 , a first circuit layer 120 , a second circuit layer 130 and a chip 140 , wherein the flexible substrate 110 has a relatively The first surface 110a and the second surface 110b of the first surface 110a and the chip coverage area 112 located on the first surface 110a. Further, the chip coverage area 112 may include two opposite long sides 112L and two opposite short sides 112S, and the chip coverage area 112 is divided into a second area adjacent to one of the two short sides 112S along the long side direction D A side area 1121, a central area 1122, and a second side area 1123 adjacent to the other one of the two short sides 112S, wherein the flexible substrate 110 includes a first side area 1121, a central area 1122, and a second side area 1122 corresponding respectively The first region R1 , the second region R2 and the third region R3 of the side region 1123 . On the other hand, the first circuit layer 120 and the second circuit layer 130 are respectively located on the first surface 110 a and the second surface 110 b , and the chip 140 is disposed in the chip coverage area 112 and bonded to the first circuit layer 120 . For example, the chip 140 is bonded and electrically connected to the first wiring layer 120 through a plurality of bumps 142, but the invention is not limited thereto.

在此,可挠性基板110的材质例如是聚乙烯对苯二甲酸酯(polyethyleneterephthalate,PET)、聚酰亚胺(Polyimide,PI)、聚醚(polyethersulfone,PES)、碳酸脂(polycarbonate,PC)或其他适合的可挠性材料,第一线路层120与第二线路层130的材质例如是铜(可形成双面铜箔基板)或其他适宜的导电金属材料,而芯片140可以是驱动芯片或任何适宜的芯片。Here, the material of the flexible substrate 110 is, for example, polyethylene terephthalate (PET), polyimide (PI), polyethersulfone (PES), and polycarbonate (PC). ) or other suitable flexible materials, the material of the first circuit layer 120 and the second circuit layer 130 is, for example, copper (a double-sided copper foil substrate can be formed) or other suitable conductive metal materials, and the chip 140 can be a driver chip or any suitable chip.

在本实施例中,薄膜覆晶封装结构100将可挠性基板110上的线路布局设计为第二线路层130的线路铺设面积与第一线路层120的线路铺设面积的比值在第一区R1内与第三区R3内是介于0.9至1.2之间,以使可挠性基板110的相对二个表面(第一表面110a与第二表面110b)上的线路铺设面积比例相近,因此可以避免可挠性基板110因相对二个表面的热膨胀系数不匹配幅度差异产生的应力不平均所导致的翘曲变形,进而改善引脚接合不良、剥离或断裂的问题,提升薄膜覆晶封装结构100的可靠度。进一步而言,由于可挠性材料的可挠性基板110与金属材料的线路层的热膨胀系数不匹配幅度会与线路层的铺设面积正相关,而热膨胀系数不匹配幅度越大也会产生越大的热应力,因此可挠性基板110若是在相对二个表面上的线路铺设面积比例差异越大时,会对应地在相对二个表面上形成越不平均的热应力,进而导致可挠性基板110较明显的翘曲变形。此外,在内引脚接合工艺中,芯片140一般是以热压方式接合至可挠性基板110的芯片覆盖区112,因此芯片覆盖区112所承受的热效应更为强烈,而可挠性基板110的芯片覆盖区112在对应芯片140两侧边(即邻近二个短边112S)的第一侧边区1121与第二侧边区1123的翘曲变形量又较对应芯片140中央的中央区1122的翘曲变形量来得大,因此本实施例的薄膜覆晶封装结构100针对可挠性基板110在对应第一侧边区1121与第二侧边区1123的第一区R1与第三区R3处将相对二个表面(第一表面110a与第二表面110b)上的线路层的铺设面积做趋近的设计,使第二线路层130的线路铺设面积与第一线路层120的线路铺设面积的比值介于0.9至1.2之间,以使线路铺设面积比例相近,因此可以降低热应力不平均所导致的翘曲变形,改善引脚接合不良、剥离或断裂的问题,进而提升薄膜覆晶封装结构100的可靠度。In this embodiment, the chip on film package structure 100 designs the circuit layout on the flexible substrate 110 such that the ratio of the circuit laying area of the second circuit layer 130 to the circuit laying area of the first circuit layer 120 is in the first region R1 The inner and third regions R3 are between 0.9 and 1.2, so that the ratio of the laying area of the lines on the two opposite surfaces (the first surface 110 a and the second surface 110 b ) of the flexible substrate 110 is similar, so it can be avoided. The flexible substrate 110 is warped and deformed due to the uneven stress caused by the difference in the thermal expansion coefficients of the two surfaces, thereby improving the problems of poor pin bonding, peeling or cracking, and improving the film-on-chip package structure 100. reliability. Further, because the mismatch of the thermal expansion coefficient between the flexible substrate 110 of the flexible material and the circuit layer of the metal material is positively related to the laying area of the circuit layer, and the larger the mismatch of the thermal expansion coefficient, the greater the Therefore, if the difference in the ratio of the laying area of the lines on the two opposite surfaces of the flexible substrate 110 is larger, the more uneven thermal stress will be formed on the two opposite surfaces accordingly, resulting in the flexible substrate 110 110 more obvious warping deformation. In addition, in the inner pin bonding process, the chip 140 is generally bonded to the chip footprint 112 of the flexible substrate 110 by thermocompression, so the thermal effect on the chip footprint 112 is more intense, and the flexible substrate 110 The warpage deformation of the first side region 1121 and the second side region 1123 corresponding to the two sides of the chip 140 (that is, adjacent to the two short sides 112S) of the chip coverage area 112 is larger than that of the central region 1122 corresponding to the center of the chip 140 Therefore, the thin film-on-chip package structure 100 of the present embodiment targets the flexible substrate 110 in the first region R1 and the third region R3 corresponding to the first side region 1121 and the second side region 1123 At this point, the layout area of the circuit layers on the opposite two surfaces (the first surface 110 a and the second surface 110 b ) is designed to be approximated, so that the circuit layout area of the second circuit layer 130 is the same as the circuit layout area of the first circuit layer 120 The ratio is between 0.9 and 1.2, so that the ratio of the laying area of the circuit is similar, so it can reduce the warpage caused by uneven thermal stress, improve the problem of poor pin bonding, peeling or breaking, and then improve the thin film flip chip packaging. Reliability of structure 100.

在一些实施例中,第一侧边区1121在长边方向D上的长度L1与第二侧边区1123在长边方向D上的长度L2分别为芯片覆盖区112的长边长度L的1/4至1/6。进一步而言,第一侧边区1121在长边方向D上的长度L1与第二侧边区1123在长边方向D上的长度L2可以分别为芯片覆盖区112的长边长度L的1/5,但本发明不限于此。In some embodiments, the length L1 of the first side region 1121 in the longitudinal direction D and the length L2 of the second side region 1123 in the longitudinal direction D are respectively 1 of the long side length L of the chip footprint 112 . /4 to 1/6. Further, the length L1 of the first side region 1121 in the longitudinal direction D and the length L2 of the second side region 1123 in the longitudinal direction D may be respectively 1/1 of the long side length L of the chip footprint 112 5, but the present invention is not limited to this.

在一些实施例中,第一侧边区1121在长边方向D上的长度L1与第二侧边区1123在长边方向D上的长度L2相同,但本发明不限于此,依实际设计上的需求第一侧边区1121在长边方向D上的长度L1与第二侧边区1123在长边方向D上的长度L2可以不同。In some embodiments, the length L1 of the first side region 1121 in the longitudinal direction D is the same as the length L2 of the second side region 1123 in the longitudinal direction D, but the present invention is not limited to this, depending on the actual design The length L1 of the first side region 1121 in the longitudinal direction D and the length L2 of the second side region 1123 in the longitudinal direction D may be different.

在一些实施例中,芯片覆盖区112外扩一距离d而构成第一区R1、第二区R2与第三区R3的边缘e。进一步而言,边缘e与芯片覆盖区112之间可以包括围绕第一侧边区1121的三边(如二个短边112S的其中一者与连接前述短边112S的二个长边112L的一侧边部分区段)的第一外扩区E1,邻接中央区1122的相对两边(如二个长边112L的中间部分区段)的第二外扩区E2与围绕第二侧边区1123的三边(如二个短边112S的另外一者与连接前述短边112S的二个长边112L的另一侧边部分区段)的第三外扩区E3,其中第一区R1包括第一侧边区1121与第一外扩区E1,第二区R2包括中央区1122与第二外扩区E2,而第三区R3包括第二侧边区1123与第三外扩区E3。由于内引脚接合工艺时的热效应主要作用在芯片覆盖区112以及其邻近区域,特别是邻近二个短边112S的区域受热导致的翘曲变形情况更加明显,因此对于分别邻接二个短边112S的第一区R1(对应第一侧边区1121)与第三区R3(对应第二侧边区1123)进行二个表面上的线路铺设面积比例的设计,可以更有效改善薄膜覆晶封装结构100的翘曲变形与引脚接合不良、剥离或断裂的问题,进一步提升薄膜覆晶封装结构100的可靠度,但本发明不限于此。In some embodiments, the chip coverage area 112 is expanded by a distance d to form the edge e of the first area R1 , the second area R2 and the third area R3 . Further, the edge e and the chip coverage area 112 may include three sides surrounding the first side area 1121 (eg, one of the two short sides 112S and one of the two long sides 112L connecting the aforementioned short sides 112S) The first outer expansion area E1 of the side part section), the second outer expansion area E2 adjacent to the opposite sides of the central area 1122 (such as the middle part section of the two long sides 112L), and the second outer expansion area E2 surrounding the second side area 1123. The third expansion area E3 of three sides (eg, the other one of the two short sides 112S and the other side part section connecting the two long sides 112L of the aforementioned short sides 112S), wherein the first area R1 includes the first The side area 1121 and the first expanding area E1, the second area R2 includes the central area 1122 and the second expanding area E2, and the third area R3 includes the second side area 1123 and the third expanding area E3. Since the thermal effect during the inner pin bonding process mainly acts on the chip coverage area 112 and its adjacent areas, especially the warping deformation caused by the heat in the area adjacent to the two short sides 112S is more obvious. Therefore, for the two adjacent short sides 112S respectively The first region R1 (corresponding to the first side region 1121 ) and the third region R3 (corresponding to the second side region 1123 ) are designed to design the area ratio of the lines on the two surfaces, which can more effectively improve the film-on-chip packaging structure. The warpage deformation of 100 and the problems of poor pin bonding, peeling or fracture further improve the reliability of the chip on film package structure 100, but the present invention is not limited thereto.

在一些实施例中,距离d为芯片覆盖区112的长边长度L的1/8至1/12。进一步而言,距离d可以为芯片覆盖区112的长边长度L的1/10。举例而言,距离d可以为400微米。应说明的是,本发明不限制于上述外扩距离的数值与范围,外扩距离可以视实际设计上的需求而定。In some embodiments, the distance d is 1/8 to 1/12 of the length L of the long side of the chip footprint 112 . Further, the distance d may be 1/10 of the length L of the long side of the chip footprint 112 . For example, the distance d may be 400 microns. It should be noted that the present invention is not limited to the numerical value and range of the above-mentioned outward expansion distance, and the outward expansion distance may be determined according to actual design requirements.

在一些实施例中,由于可挠性基板110在芯片覆盖区112的中央区域的形变量较小,但考量相对二个表面的热膨胀系数不匹配幅度差异过大时仍容易导致翘曲变形,因此将第二区R2内的第二线路层130的线路铺设面积与第一线路层120的线路铺设面积的比值设计为不大于1.5,相较于第一区R1与第三区R3内第二线路层130的线路铺设面积与第一线路层120的线路铺设面积的比值而言具有较大的空间应用弹性,但本发明不限于此。In some embodiments, since the deformation of the flexible substrate 110 in the central area of the chip coverage area 112 is relatively small, warpage is likely to be caused when the difference in the thermal expansion coefficients of the two surfaces is too large. The ratio of the circuit laying area of the second circuit layer 130 in the second area R2 to the circuit laying area of the first circuit layer 120 is designed to be no greater than 1.5, compared to the second circuit in the first area R1 and the third area R3. The ratio of the circuit laying area of the layer 130 to the circuit laying area of the first circuit layer 120 has greater flexibility in spatial application, but the invention is not limited thereto.

在一些实施例中,薄膜覆晶封装结构100还包括防焊层150,其中防焊层150位于可挠性基材110上,且局部覆盖第一线路层120与第二线路层130,以防止第一线路层120与第二线路层130受到水气或异物污染而影响电性能力,但本发明不限于此。In some embodiments, the chip on film package structure 100 further includes a solder mask layer 150 , wherein the solder mask layer 150 is located on the flexible substrate 110 and partially covers the first circuit layer 120 and the second circuit layer 130 to prevent The electrical capability of the first circuit layer 120 and the second circuit layer 130 is affected by contamination by water vapor or foreign matter, but the invention is not limited thereto.

在一些实施例中,薄膜覆晶封装结构100还包括封装胶体160,封装胶体160可以填充至芯片140与可挠性基板110之间的空隙中,以对芯片140与可挠性基板110的电性接点进行保护。封装胶体160例如是底部填充胶(Underfill),但本发明不限于此。In some embodiments, the chip on film package structure 100 further includes an encapsulating compound 160 , and the encapsulating compound 160 can be filled into the gap between the chip 140 and the flexible substrate 110 , so as to electrically connect the chip 140 and the flexible substrate 110 . Sex contacts are protected. The encapsulant 160 is, for example, underfill, but the present invention is not limited thereto.

综上所述,本发明的薄膜覆晶封装结构在封装工艺(例如内引脚接合工艺)中,可挠性基板的芯片覆盖区所承受的热效应最为强烈,特别是在对应芯片两侧边处的翘曲变形量又较对应芯片中央处的翘曲变形量来得大,因此将可挠性基板上的线路布局设计为第二线路层的线路铺设面积与第一线路层的线路铺设面积的比值在对应芯片两侧边处的第一区内与第三区内是介于0.9至1.2之间,以使可挠性基板的相对二个表面上的线路铺设面积比例相近,因此可以避免可挠性基板因相对二个表面的热膨胀系数不匹配幅度差异产生的应力不平均所导致的翘曲变形,进而改善引脚接合不良、剥离或断裂的问题,提升薄膜覆晶封装结构的可靠度。To sum up, in the packaging process (such as the inner pin bonding process) of the film-on-chip package structure of the present invention, the chip coverage area of the flexible substrate is subjected to the strongest thermal effect, especially at the two sides of the corresponding chip. The warpage deformation is larger than that at the center of the corresponding chip. Therefore, the circuit layout on the flexible substrate is designed as the ratio of the circuit laying area of the second circuit layer to the circuit laying area of the first circuit layer. The first area and the third area at the two sides of the corresponding chip are between 0.9 and 1.2, so that the circuit laying area ratios on the two opposite surfaces of the flexible substrate are similar, so that the flexible substrate can be avoided. The warpage deformation caused by the uneven stress caused by the difference in the thermal expansion coefficients of the two surfaces of the flexible substrate, thereby improving the problems of poor pin bonding, peeling or cracking, and improving the reliability of the film-on-chip package structure.

最后应说明的是:以上各实施例仅用以说明本发明的技术方案,而非对其限制;尽管参照前述各实施例对本发明进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分或者全部技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明各实施例技术方案的范围。Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, but not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: The technical solutions described in the foregoing embodiments can still be modified, or some or all of the technical features thereof can be equivalently replaced; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the technical solutions of the embodiments of the present invention. scope.

Claims (10)

1.一种薄膜覆晶封装结构,其特征在于,包括:1. A film-on-chip packaging structure, characterized in that, comprising: 可挠性基板,具有相对的第一表面与第二表面以及位于所述第一表面的芯片覆盖区,所述芯片覆盖区沿长边方向划分成第一侧边区、中央区及第二侧边区,所述可挠性基板包括分别对应所述第一侧边区、所述中央区及所述第二侧边区的第一区、第二区与第三区;A flexible substrate having opposite first and second surfaces and a chip coverage area located on the first surface, the chip coverage area is divided into a first side area, a central area and a second side along the longitudinal direction an edge region, the flexible substrate includes a first region, a second region and a third region corresponding to the first side region, the central region and the second side region respectively; 第一线路层,位于所述第一表面上;a first circuit layer, located on the first surface; 第二线路层,位于所述第二表面上;以及a second wiring layer on the second surface; and 芯片,配置于所述芯片覆盖区并接合所述第一线路层,其中a chip, disposed in the chip coverage area and bonded to the first circuit layer, wherein 所述第二线路层的线路铺设面积与所述第一线路层的线路铺设面积的比值在所述第一区内与所述第三区内是介于0.9至1.2之间。The ratio of the line laying area of the second line layer to the line laying area of the first line layer is between 0.9 and 1.2 in the first area and the third area. 2.根据权利要求1所述的薄膜覆晶封装结构,其特征在于,所述第一侧边区在所述长边方向上的长度与所述第二侧边区在所述长边方向上的长度分别为所述芯片覆盖区的长边长度的1/4至1/6。2 . The chip-on-film package structure according to claim 1 , wherein the length of the first side region in the longitudinal direction is the same as the length of the second side region in the longitudinal direction. 3 . The lengths are respectively 1/4 to 1/6 of the length of the long side of the chip coverage area. 3.根据权利要求2所述的薄膜覆晶封装结构,其特征在于,所述第一侧边区在所述长边方向上的长度与所述第二侧边区在所述长边方向上的长度分别为所述芯片覆盖区的长边长度的1/5。3 . The chip-on-film package structure according to claim 2 , wherein the length of the first side region in the longitudinal direction is the same as the length of the second side region in the longitudinal direction. 4 . The lengths are respectively 1/5 of the length of the long side of the chip coverage area. 4.根据权利要求1所述的薄膜覆晶封装结构,其特征在于,所述芯片覆盖区外扩一距离而构成所述第一区、所述第二区与所述第三区的边缘。4 . The chip-on-film package structure of claim 1 , wherein the chip coverage area is extended by a distance to form edges of the first area, the second area, and the third area. 5 . 5.根据权利要求4所述的薄膜覆晶封装结构,其特征在于,所述边缘与所述芯片覆盖区之间包括围绕所述第一侧边区的三边的第一外扩区,邻接所述中央区的相对两边的第二外扩区与围绕所述第二侧边区的三边的第三外扩区,其中所述第一区包括所述第一侧边区与所述第一外扩区,所述第二区包括所述中央区与所述第二外扩区,所述第三区包括所述第二侧边区与所述第三外扩区。5 . The chip-on-film package structure according to claim 4 , wherein the edge and the chip coverage area comprise a first expansion area surrounding three sides of the first side area, and adjacent to The second outer expansion area on the opposite two sides of the central area and the third outer expansion area surrounding the three sides of the second side area, wherein the first area includes the first side area and the third outer expansion area. an expansion area, the second area includes the central area and the second expansion area, and the third area includes the second side area and the third expansion area. 6.根据权利要求4所述的薄膜覆晶封装结构,其特征在于,所述距离为所述芯片覆盖区的长边长度的1/8至1/12。6 . The chip on film package structure according to claim 4 , wherein the distance is 1/8 to 1/12 of the length of the long side of the chip coverage area. 7 . 7.根据权利要求6所述的薄膜覆晶封装结构,其特征在于,所述距离为所述芯片覆盖区的长边长度的1/10。7 . The chip on film package structure according to claim 6 , wherein the distance is 1/10 of the length of the long side of the chip coverage area. 8 . 8.根据权利要求4所述的薄膜覆晶封装结构,其特征在于,所述距离为400微米。8 . The chip on film package structure according to claim 4 , wherein the distance is 400 μm. 9 . 9.根据权利要求1所述的薄膜覆晶封装结构,其特征在于,所述第二线路层的线路铺设面积与所述第一线路层的线路铺设面积的比值在所述第二区内是不大于1.5。9 . The chip-on-film package structure according to claim 1 , wherein the ratio of the circuit laying area of the second circuit layer to the circuit laying area of the first circuit layer in the second region is 10 . not greater than 1.5. 10.根据权利要求1所述的薄膜覆晶封装结构,其特征在于,所述芯片通过多个凸块接合所述第一线路层。10 . The chip on film package structure of claim 1 , wherein the chip is bonded to the first circuit layer through a plurality of bumps. 11 .
CN202110667331.0A 2021-04-28 2021-06-16 Thin film flip chip packaging structure Pending CN115249681A (en)

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CN110391207A (en) * 2018-04-19 2019-10-29 南茂科技股份有限公司 Thin Film Chip-on-Chip Packaging Structure
TWI686507B (en) * 2019-05-14 2020-03-01 頎邦科技股份有限公司 Flexible circuit board for carrying chip and manufacturing method thereof
CN112420653A (en) * 2019-08-23 2021-02-26 欣兴电子股份有限公司 Substrate structure and manufacturing method thereof

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CN109494208A (en) * 2017-09-11 2019-03-19 南茂科技股份有限公司 Chip-on-Film Package Structure
CN110391207A (en) * 2018-04-19 2019-10-29 南茂科技股份有限公司 Thin Film Chip-on-Chip Packaging Structure
TWI686507B (en) * 2019-05-14 2020-03-01 頎邦科技股份有限公司 Flexible circuit board for carrying chip and manufacturing method thereof
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