CN114530383A - Fan-out type packaging method - Google Patents
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- CN114530383A CN114530383A CN202111665483.3A CN202111665483A CN114530383A CN 114530383 A CN114530383 A CN 114530383A CN 202111665483 A CN202111665483 A CN 202111665483A CN 114530383 A CN114530383 A CN 114530383A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 47
- 238000000034 method Methods 0.000 title claims abstract description 31
- 230000007246 mechanism Effects 0.000 claims abstract description 115
- 230000000903 blocking effect Effects 0.000 claims abstract description 53
- 239000003292 glue Substances 0.000 claims abstract description 14
- 239000004020 conductor Substances 0.000 claims description 31
- 229920002120 photoresistant polymer Polymers 0.000 claims description 16
- 239000000084 colloidal system Substances 0.000 claims description 6
- 238000000465 moulding Methods 0.000 claims description 3
- 239000008393 encapsulating agent Substances 0.000 claims 1
- 239000005022 packaging material Substances 0.000 abstract description 3
- 238000007789 sealing Methods 0.000 description 31
- 238000010586 diagram Methods 0.000 description 15
- 238000005538 encapsulation Methods 0.000 description 10
- 230000009286 beneficial effect Effects 0.000 description 4
- 239000004615 ingredient Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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Abstract
Description
技术领域technical field
本申请涉及半导体封装技术领域,特别是涉及一种扇出型封装方法。The present application relates to the technical field of semiconductor packaging, and in particular, to a fan-out packaging method.
背景技术Background technique
本部分的描述仅提供与本说明书公开相关的背景信息,而不构成现有技术。The descriptions in this section merely provide background information related to the disclosure in this specification and do not constitute prior art.
传统的扇出型封装结构,由于塑封料会因收缩产生形变,容易造成芯片在封装结构内产生偏移,从而存在被塑封的芯片偏离原设计位置的问题,影响芯片的稳定性。In the traditional fan-out packaging structure, since the plastic packaging material will deform due to shrinkage, it is easy to cause the chip to shift within the packaging structure, so that the plastic-encapsulated chip deviates from the original design position, which affects the stability of the chip.
应该注意,上面对技术背景的介绍只是为了方便对本说明书的技术方案进行清楚、完整的说明,并方便本领域技术人员的理解而阐述的。不能仅仅因为这些方案在本说明书的背景技术部分进行了阐述而认为上述技术方案为本领域技术人员所公知。It should be noted that the above description of the technical background is only for the convenience of clearly and completely describing the technical solutions of the present specification, and for the convenience of understanding of those skilled in the art. It should not be assumed that the above-mentioned technical solutions are known to those skilled in the art simply because they are described in the background section of this specification.
发明内容SUMMARY OF THE INVENTION
本申请主要解决的技术问题是提供一种扇出型封装方法,操作简单,且能够减小塑封料因收缩产生的形变量,保证芯片的稳定性。The main technical problem to be solved by the present application is to provide a fan-out packaging method, which is easy to operate, and can reduce the amount of deformation caused by shrinkage of the plastic packaging material, so as to ensure the stability of the chip.
为解决上述技术问题,本申请采用的一个技术方案是:提供一种扇出型封装方法,包括:In order to solve the above technical problems, a technical solution adopted in this application is to provide a fan-out packaging method, including:
提供第一载板;provide a first carrier board;
在所述第一载板上形成导电机构;forming a conductive mechanism on the first carrier;
在所述第一载板上点胶形成阻挡机构;其中,至少部分所述导电机构和所述阻挡机构相接触;Dispensing glue on the first carrier to form a blocking mechanism; wherein at least part of the conductive mechanism is in contact with the blocking mechanism;
在所述第一载板上设置芯片,使所述导电机构和所述阻挡机构位于所述芯片的外围;A chip is arranged on the first carrier board, so that the conductive mechanism and the blocking mechanism are located on the periphery of the chip;
在所述第一载板设有所述芯片的一侧形成塑封层;其中,所述塑封层至少覆盖所述芯片、所述阻挡机构和所述导电机构的侧面外围,所述芯片、所述阻挡机构和所述导电机构通过所述塑封层形成整体结构;A plastic encapsulation layer is formed on the side of the first carrier plate on which the chip is provided; wherein, the plastic encapsulation layer at least covers the side periphery of the chip, the blocking mechanism and the conductive mechanism, and the chip, the The blocking mechanism and the conductive mechanism form an integral structure through the plastic sealing layer;
去除所述第一载板。The first carrier plate is removed.
进一步地,所述在所述第一载板上点胶形成阻挡机构的步骤,包括:Further, the step of forming a blocking mechanism by dispensing glue on the first carrier includes:
在所述导电机构背对所述第一载板的一侧对所述导电机构点胶。The conductive mechanism is glued on the side of the conductive mechanism facing away from the first carrier board.
进一步地,所述导电机构包括多个导电件,且位于所述芯片同侧的多个所述导电件形成导电件组;所述对所述导电机构点胶的步骤,包括:Further, the conductive mechanism includes a plurality of conductive members, and a plurality of the conductive members located on the same side of the chip form a conductive member group; the step of dispensing glue to the conductive mechanism includes:
使点出的胶体与至少部分所述导电件组内的至少部分相邻所述导电件的侧面外围接触。The dotted colloid is brought into contact with at least part of the outer periphery of the side surfaces of at least part of the adjacent conductive members in the conductive member group.
进一步地,所述对所述导电机构点胶的步骤之后,还包括:Further, after the step of dispensing glue to the conductive mechanism, it also includes:
烘烤固化所述阻挡机构。The blocking mechanism is cured by baking.
进一步地,所述阻挡机构位于所述塑封层内的表面为曲面。Further, the surface of the blocking mechanism located in the plastic sealing layer is a curved surface.
进一步地,所述在所述第一载板上形成导电机构的步骤,包括:Further, the step of forming a conductive mechanism on the first carrier board includes:
在所述第一载板的一侧形成导电层;forming a conductive layer on one side of the first carrier;
在所述导电层背对所述第一载板的一侧形成光阻层;forming a photoresist layer on the side of the conductive layer facing away from the first carrier;
对所述光阻层进行曝光显影,以在所述光阻层上形成多个通孔;exposing and developing the photoresist layer to form a plurality of through holes on the photoresist layer;
在所述通孔内填入导电材料以形成所述导电机构;Filling conductive material in the through hole to form the conductive mechanism;
去除所述光阻层和所述导电层。The photoresist layer and the conductive layer are removed.
进一步地,所述芯片包括相背设置的功能面和非功能面,所述在所述第一载板上设置芯片的步骤中,使所述功能面面对所述第一载板。Further, the chip includes a functional surface and a non-functional surface disposed opposite to each other, and in the step of disposing the chip on the first carrier board, the functional surface is made to face the first carrier board.
进一步地,所述形成塑封层的步骤,包括:Further, the step of forming the plastic encapsulation layer includes:
在所述第一载板设置有所述芯片一侧形成所述塑封层,且所述塑封层覆盖所述导电机构、所述阻挡机构以及所述芯片所围设的空间内的缝隙;The plastic sealing layer is formed on the side where the chip is disposed on the first carrier, and the plastic sealing layer covers the conductive mechanism, the blocking mechanism and the gap in the space surrounded by the chip;
从所述塑封层背离所述第一载板的一侧对所述塑封层进行研磨,以使得所述导电机构背离所述第一载板的一侧露出。The plastic packaging layer is ground from the side of the plastic packaging layer away from the first carrier board, so that the conductive mechanism is exposed on the side away from the first carrier board.
进一步地,在所述形成塑封层的步骤之后,及所述去除所述第一载板的步骤之前,还包括:Further, after the step of forming the plastic encapsulation layer and before the step of removing the first carrier board, the method further includes:
在所述塑封层背对所述第一载板的一侧形成第一再布线层,所述第一再布线层与所述导电机构背对所述第一载板的一端电连接;A first redistribution layer is formed on the side of the plastic sealing layer facing away from the first carrier board, and the first redistribution layer is electrically connected to an end of the conductive mechanism facing away from the first carrier board;
在所述第一再布线层背离所述塑封层的一侧设置第一导电体,所述第一导电体与所述第一再布线层电连接。A first electrical conductor is disposed on the side of the first redistribution layer away from the plastic sealing layer, and the first electrical conductor is electrically connected to the first redistribution layer.
进一步地,在所述去除所述第一载板的步骤之后,还包括:Further, after the step of removing the first carrier board, the method further includes:
在所述第一导电体背对所述第一再布线层的一侧设置第二载板;A second carrier is arranged on the side of the first conductor facing away from the first redistribution layer;
在所述塑封层背对所述第二载板的一侧形成第二再布线层,所述第二再布线层分别与所述导电机构背对所述第二载板的一端、所述芯片电连接;A second redistribution layer is formed on the side of the plastic packaging layer facing away from the second carrier, the second redistribution layer and the end of the conductive mechanism facing away from the second carrier, the chip electrical connection;
在所述第二再布线层背离所述塑封层的一侧设置第二导电体,所述第二导电体与所述第二再布线层电连接;A second conductor is provided on the side of the second redistribution layer away from the plastic sealing layer, and the second conductor is electrically connected to the second redistribution layer;
去除所述第二载板。The second carrier plate is removed.
区别于现有技术的情况,本申请的有益效果是:本申请实施方式提供的扇出型封装方法,成本更低,易于生产。在芯片的外围通过点胶形成阻挡机构,操作简单,阻挡机构可以相当于围堰挡墙,其可以限制塑封层中塑封料的移动,以减小塑封料因收缩产生的形变量,限制芯片位移,降低芯片翘曲的概率;此外,在芯片的外围还设置有导电机构,可以实现三维垂直互联结构,有利于降低扇出型封装方法的高度;另外,至少部分导电机构和阻挡机构相接触,芯片、阻挡机构和导电机构通过塑封层形成整体结构,大大增强了阻挡机构的强度,进一步保证芯片的稳定性。Different from the situation in the prior art, the beneficial effects of the present application are: the fan-out packaging method provided by the embodiments of the present application has lower cost and is easy to produce. A blocking mechanism is formed by dispensing glue on the periphery of the chip. The operation is simple. The blocking mechanism can be equivalent to a cofferdam retaining wall, which can limit the movement of the plastic sealing compound in the plastic sealing layer, so as to reduce the deformation amount caused by the shrinkage of the plastic sealing material and limit the displacement of the chip. , reduce the probability of chip warping; in addition, a conductive mechanism is also provided on the periphery of the chip, which can realize a three-dimensional vertical interconnection structure, which is beneficial to reduce the height of the fan-out packaging method; in addition, at least part of the conductive mechanism and the blocking mechanism are in contact, The chip, the blocking mechanism and the conductive mechanism form an integral structure through the plastic sealing layer, which greatly enhances the strength of the blocking mechanism and further ensures the stability of the chip.
附图说明Description of drawings
为了更清楚地说明本申请实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。其中:In order to illustrate the technical solutions in the embodiments of the present application more clearly, the following briefly introduces the drawings that are used in the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can also be obtained from these drawings without creative effort. in:
图1为本实施方式中所提供的一种扇出型封装方法的步骤流程图;1 is a flowchart of steps of a fan-out packaging method provided in this embodiment;
图2为图1中步骤S20的具体步骤流程图;Fig. 2 is the specific step flow chart of step S20 in Fig. 1;
图3为图1中步骤S50和步骤S60之间的步骤流程图;Fig. 3 is a flow chart of the steps between step S50 and step S60 in Fig. 1;
图4为图1中步骤S60之后的步骤流程图;Fig. 4 is the step flow chart after step S60 in Fig. 1;
图5为对第一载板进行图2中步骤S201的结构示意图;FIG. 5 is a schematic structural diagram of performing step S201 in FIG. 2 on the first carrier board;
图6为对图5进行图2中步骤S202和步骤S203的结构示意图;FIG. 6 is a schematic structural diagram of performing step S202 and step S203 in FIG. 2 to FIG. 5;
图7为对图6进行图2中步骤S204的结构示意图;FIG. 7 is a schematic structural diagram of performing step S204 in FIG. 2 on FIG. 6;
图8为对图7进行图2中步骤S205的结构示意图;FIG. 8 is a schematic structural diagram of performing step S205 in FIG. 2 on FIG. 7;
图9为对图8进行图1中步骤S30的结构示意图;FIG. 9 is a schematic structural diagram of performing step S30 in FIG. 1 on FIG. 8;
图10为对图9进行步骤S30后的结构示意图;FIG. 10 is a schematic structural diagram of FIG. 9 after step S30 is performed;
图11为对图10进行图1中步骤S40后的结构示意图;FIG. 11 is a schematic structural diagram of FIG. 10 after step S40 in FIG. 1 is performed;
图12为对图11进行图3中步骤S501的结构示意图;FIG. 12 is a schematic structural diagram of performing step S501 in FIG. 3 on FIG. 11 ;
图13为对图12进行图3中步骤S502的结构示意图;FIG. 13 is a schematic structural diagram of performing step S502 in FIG. 3 on FIG. 12;
图14为对图13进行图3中步骤S503和步骤S504的结构示意图;FIG. 14 is a schematic structural diagram of performing step S503 and step S504 in FIG. 3 to FIG. 13 ;
图15为对图14进行步骤S60和步骤S601的结构示意图;FIG. 15 is a schematic structural diagram of performing steps S60 and S601 on FIG. 14;
图16为对图15进行图4中步骤S602和步骤S603的结构示意图;FIG. 16 is a schematic structural diagram of performing step S602 and step S603 in FIG. 4 to FIG. 15;
图17为对图16进行图4中步骤S604的结构示意图,图17也为根据图1的封装方法提供的第一种扇出型封装器件的结构示意图;17 is a schematic structural diagram of performing step S604 in FIG. 4 on FIG. 16 , and FIG. 17 is also a schematic structural diagram of the first fan-out package device provided according to the packaging method of FIG. 1 ;
图18为根据图1的封装方法提供的第二种扇出型封装器件的结构示意图。FIG. 18 is a schematic structural diagram of a second fan-out package device provided according to the packaging method of FIG. 1 .
附图标记说明:Description of reference numbers:
1、第一载板;2、导电机构;3、阻挡机构;4、芯片;5、塑封层;6、光阻层;7、通孔;8、导电材料;9、导电层;11、导电件;12、导电件组;13、功能面;14、非功能面;15、第一再布线层;16、第一导电体;17、第一绝缘层;18、第二载板;19、第二再布线层;20、第二导电体;21、第二绝缘层。1. First carrier board; 2. Conductive mechanism; 3. Blocking mechanism; 4. Chip; 5. Plastic encapsulation layer; 6. Photoresist layer; 7. Through hole; 8. Conductive material; 9. Conductive layer; component; 12, conductive component group; 13, functional surface; 14, non-functional surface; 15, first redistribution layer; 16, first conductor; 17, first insulating layer; 18, second carrier board; 19, The second redistribution layer; 20, the second conductor; 21, the second insulating layer.
具体实施方式Detailed ways
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅是本申请的一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例,都属于本申请保护的范围。The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, but not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present application.
需要说明的是,当元件被称为“设置于”另一个元件,它可以直接在另一个元件上或者也可以存在居中的另一个元件。当一个元件被认为是“连接”另一个元件,它可以是直接连接到另一个元件或者可能同时存在居中另一个元件。本文所使用的术语“垂直的”、“水平的”、“左”、“右”以及类似的表述只是为了说明的目的,并不表示是唯一的实施方式。It should be noted that when an element is referred to as being "disposed on" another element, it can be directly on the other element or intervening another element may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or it may be intervening with the other element. The terms "vertical", "horizontal", "left", "right" and similar expressions used herein are for the purpose of illustration only and do not represent the only embodiment.
除非另有定义,本文所使用的所有的技术和科学术语与属于本申请的技术领域的技术人员通常理解的含义相同。本文中在本申请的说明书中所使用的术语只是为了描述具体的实施例的目的,不是旨在于限制本申请。本文所使用的术语“和/或”包括一个或多个相关的所列项目的任意的和所有的组合。Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terms used herein in the specification of the application are for the purpose of describing specific embodiments only, and are not intended to limit the application. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
请参阅图1。本申请实施方式提供一种扇出型封装方法,包括以下步骤:See Figure 1. Embodiments of the present application provide a fan-out packaging method, including the following steps:
步骤S10:提供第一载板1;Step S10: providing a
步骤S20:在第一载板1上形成导电机构2;Step S20: forming a
步骤S30:在第一载板1上点胶形成阻挡机构3;其中,至少部分导电机构2和阻挡机构3相接触;Step S30: Dispensing glue on the
步骤S40:在第一载板1上设置芯片4,使导电机构2和阻挡机构3位于芯片4的外围;Step S40: disposing the
步骤S50:在第一载板1设有芯片4的一侧形成塑封层5;其中,塑封层5至少覆盖芯片4、阻挡机构3和导电机构2的侧面外围,芯片4、阻挡机构3和导电机构2通过塑封层5形成整体结构;Step S50 : forming a
步骤S60:去除第一载板1。Step S60 : removing the
本申请实施方式提供的扇出型封装方法,成本更低,易于生产。在芯片4的外围通过点胶形成阻挡机构3,操作简单,阻挡机构3可以相当于围堰挡墙,其可以限制塑封层5中塑封料的移动,以减小塑封料因收缩产生的形变量,限制芯片4位移,降低芯片4翘曲的概率;此外,在芯片4的外围还设置有导电机构2,可以实现三维垂直互联结构,有利于降低扇出型封装方法的高度;另外,至少部分导电机构2和阻挡机构3相接触,芯片4、阻挡机构3和导电机构2通过塑封层5形成整体结构,大大增强了阻挡机构3的强度,进一步保证芯片4的稳定性。The fan-out packaging method provided by the embodiment of the present application has lower cost and is easy to produce. The
在本实施方式中,阻挡机构3可以有多个,多个阻挡机构3可以位于芯片4外围的不同位置,从而对芯片4周围各处进行阻挡,减小塑封料因收缩产生的形变量。具体的,芯片4可以为矩形,则其四条边的外围可以各设有一个阻挡机构3。矩形芯片4的四个角的外围也可以各设有一个阻挡机构3。In this embodiment, there may be multiple blocking
在步骤S30中,如图9所示,具体的,可以在导电机构2背对第一载板1的一侧对导电机构2点胶。由于凸点的附着力和胶体的表面张力,胶体不流出凸点区域本身,同时由于胶体的表面张力,其表面呈弧形。其中的凸点是指胶体落入第一载板1上的导电机构2中之后形成的形状。点胶的方式形成阻挡机构3,使得阻挡机构3位于塑封层5内的表面为曲面,可以进一步增大阻挡机构3和塑封层5的接触面积,使二者的结合更紧密,有利于封装结构的稳定。In step S30 , as shown in FIG. 9 , specifically, glue can be dispensed on the
在本实施方式中,导电机构2可以包括多个导电件11,且位于芯片4同侧的多个导电件11形成导电件组12。各导电件11可以沿芯片4的厚度方向延伸,也即,各导电件11可以沿图8中的竖直方向延伸。对导电机构2点胶的步骤需要使点出的胶体与至少部分导电件组12内的至少部分相邻导电件11的侧面外围接触,从而可以有效利用封装器件内的空间,且能增强阻挡机构3的强度。In this embodiment, the
在本实施方式中,对导电机构2点胶的步骤之后,还可以包括步骤:烘烤固化阻挡机构3,如图10所示,从而形成最终的阻挡机构3,使阻挡机构3更稳定。In this embodiment, after the step of dispensing glue on the
在本实施方式中,如图2所示,在第一载板1上形成导电机构2的步骤(即步骤S20),具体包括以下步骤:In this embodiment, as shown in FIG. 2 , the step of forming the
步骤S201:在第一载板1的一侧形成导电层9;Step S201: forming a
步骤S202:在导电层9背对第一载板1的一侧形成光阻层6;Step S202: forming a
步骤S203:对光阻层6进行曝光显影,以在光阻层6上形成多个通孔7;Step S203 : exposing and developing the
步骤S204:在通孔7内填入导电材料8以形成导电机构2;Step S204: Filling the conductive material 8 in the through
步骤S205:去除光阻层6和导电层9。Step S205 : removing the
在步骤S201中,参考图5,导电层9需均匀沉积在第一载板1的上表面。在步骤S203中,如图6所示,在光阻层6的上方对光阻层6进行曝光显影。优选的,各通孔7的延伸方向平行,且垂直于第一载板1的上表面。在步骤S204中,如图7所示,在通孔7内填入的导电材料8的高度需要小于或等于通孔7的高度,便于后续去除光阻层6。在步骤S205中,需要先去除光阻层6,再去除除了位于导电材料8下方以外的所有导电层9。In step S201 , referring to FIG. 5 , the
在本实施方式中,芯片4包括相背设置的功能面13和非功能面14,如图11所示,在第一载板1上设置芯片4的步骤中,使功能面13面对第一载板1。本实施方式对芯片4的数量不做限定,至少有一个待封装的芯片4。芯片4可以是数字芯片,也可以是模拟芯片,或者是存储芯片,或者是无源器件,或者是有源器件。若有多个芯片4,则芯片4之间可以相互堆叠,堆叠方式可以是Wafer to wafer(晶圆到晶圆)、chip to wafer(晶片到晶圆)或者chip tochip(晶片到晶片)。In this embodiment, the
在其他实施例中,可以使芯片4的非功能面14面对第一载板1。此时,需要在芯片4的功能面13设置电性结构,以将芯片4的功能面13引出至塑封层5外。在本实施方式中,步骤S40设置芯片4可以在步骤S20之前进行,也可以在步骤S30之后进行。In other embodiments, the
在本实施方式中,如图3所示,形成塑封层5的步骤(即步骤S50),具体包括:In this embodiment, as shown in FIG. 3 , the step of forming the plastic sealing layer 5 (ie, step S50 ) specifically includes:
步骤S501:在第一载板1设置有芯片4一侧形成塑封层5,且塑封层5覆盖导电机构2、阻挡机构3以及芯片4所围设的空间内的缝隙;Step S501 : forming a
步骤S502:从塑封层5背离第一载板1的一侧对塑封层5进行研磨,以使得导电机构2背离第一载板1的一侧露出。Step S502 : grinding the
经过步骤S501形成塑封层5后的封装结构如图12所示。The package structure after forming the
具体的,步骤S502之后,如图13所示,塑封层5的高度、阻挡机构3的高度、以及导电机构2的高度相同,使整体结构更稳定。导电机构2在长度方向上的两端从塑封层5中露出,便于后续形成再布线层。导电机构2、阻挡机构3和塑封层5与功能面13齐平设置,非功能面14位于塑封层5内。Specifically, after step S502 , as shown in FIG. 13 , the height of the
在本实施方式中,如图3所示,在形成塑封层5的步骤之后,及去除第一载板1的步骤之前,即步骤S50和步骤S60之间,还包括以下步骤:In this embodiment, as shown in FIG. 3 , after the step of forming the
步骤S503:在塑封层5背对第一载板1的一侧形成第一再布线层15,第一再布线层15与导电机构2背对第一载板1的一端电连接;Step S503 : forming a
步骤S504:在第一再布线层15背离塑封层5的一侧设置第一导电体16,第一导电体16与第一再布线层15电连接。Step S504 : a
在本实施方式中,由于封装器件本身的翘曲和芯片4位置偏移被限制,扇出型封装方法可以进行至少一层的高密度布线。如图14所示,在步骤S504中,可以同时在第一再布线层15背离塑封层5的一侧设置第一绝缘层17和第一导电体16。第一绝缘层17用于保护第一再布线层15,第一导电体16作为电性导出结构,将第一再布线层15电性导出。In the present embodiment, since the warpage of the packaged device itself and the positional displacement of the
在本实施方式中,如图4所示,在去除第一载板1的步骤(即步骤S60)之后,还包括以下步骤:In this embodiment, as shown in FIG. 4 , after the step of removing the first carrier board 1 (ie, step S60 ), the following steps are further included:
步骤S601:在第一导电体16背对第一再布线层15的一侧设置第二载板18;Step S601 : disposing the
步骤S602:在塑封层5背对第二载板18的一侧形成第二再布线层19,第二再布线层19分别与导电机构2背对第二载板18的一端、芯片4电连接;Step S602 : forming a
步骤S603:在第二再布线层19背离塑封层5的一侧设置第二导电体20,第二导电体20与第二再布线层19电连接;Step S603 : disposing a
步骤S604:去除第二载板18。Step S604 : removing the
经过步骤S601设置第二载板18后的封装结构如图15所示。如图16所示,在步骤S603中,可以同时在第二再布线层19背离塑封层5的一侧设置第二绝缘层21和第二导电体20。第二绝缘层21用于保护第二再布线层19,第二导电体20作为电性导出结构,将第二再布线层19电性导出。经过步骤S604去除第二载板18后的封装结构如图17所示。The package structure after setting the
本实施方式中的导电机构2通过光刻与电镀制作,可实现高密度排布,再搭配重布线工艺,可代替传统高密度垂直互联的转接板结构,实现了封装体积的最小化、电性损耗的最小化和封装成本的最小化。The
在本实施方式中,第一导电体16和第二导电体20可以都是Bump(凸块)结构,或者都是UBM(Under Bump Metal,凸点下金属层)结构,或者第一导电体16和第二导电体20其中之一是Bump结构,另一个是UBM结构。In this embodiment, the first
在其他实施方式中,步骤S203在光阻层6上形成多个通孔7时,可以只形成一组通孔7,从而只有芯片4一侧形成导电结构,最终形成的封装结构如图18所示。In other embodiments, when multiple through
需要说明的是,在本说明书的描述中,术语“第一”、“第二”等仅用于描述目的和区别类似的对象,两者之间并不存在先后顺序,也不能理解为指示或暗示相对重要性。此外,在本说明书的描述中,除非另有说明,“多个”的含义是两个或两个以上。It should be noted that in the description of this specification, the terms "first", "second", etc. are only used for the purpose of description and to distinguish similar objects, and there is no sequence between the two, nor can they be understood as indicating or imply relative importance. Also, in the description of this specification, unless otherwise specified, "plurality" means two or more.
使用术语“包含”或“包括”来描述这里的元件、成分、部件或步骤的组合也想到了基本由这些元件、成分、部件或步骤构成的实施方式。这里通过使用术语“可以”,旨在说明“可以”包括的所描述的任何属性都是可选的。Use of the terms "comprising" or "comprising" to describe combinations of elements, ingredients, components or steps herein also contemplates embodiments consisting essentially of those elements, ingredients, components or steps. By use of the term "may" herein, it is intended to indicate that "may" include any described attributes that are optional.
多个元件、成分、部件或步骤能够由单个集成元件、成分、部件或步骤来提供。另选地,单个集成元件、成分、部件或步骤可以被分成分离的多个元件、成分、部件或步骤。用来描述元件、成分、部件或步骤的公开“一”或“一个”并不说为了排除其他的元件、成分、部件或步骤。A plurality of elements, components, components or steps can be provided by a single integrated element, component, component or step. Alternatively, a single integrated element, component, component or step may be divided into separate multiple elements, components, components or steps. The disclosure of "a" or "an" used to describe an element, ingredient, part or step is not intended to exclude other elements, ingredients, parts or steps.
以上所述仅为本申请的实施方式,并非因此限制本申请的专利范围,凡是利用本申请说明书及附图内容所作的等效结构或等效流程变换,或直接或间接运用在其他相关的技术领域,均同理包括在本申请的专利保护范围内。The above description is only an embodiment of the present application, and is not intended to limit the scope of the patent of the present application. Any equivalent structure or equivalent process transformation made by using the contents of the description and drawings of the present application, or directly or indirectly applied to other related technologies Fields are similarly included within the scope of patent protection of this application.
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US20170271272A1 (en) * | 2016-03-15 | 2017-09-21 | Samsung Electro-Mechanics Co., Ltd. | Fan-out semiconductor package and method of manufacturing same |
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