[go: up one dir, main page]

CN114507073A - Zirconium nitride powder and preparation method thereof - Google Patents

Zirconium nitride powder and preparation method thereof Download PDF

Info

Publication number
CN114507073A
CN114507073A CN202011277829.8A CN202011277829A CN114507073A CN 114507073 A CN114507073 A CN 114507073A CN 202011277829 A CN202011277829 A CN 202011277829A CN 114507073 A CN114507073 A CN 114507073A
Authority
CN
China
Prior art keywords
zirconium nitride
powder
nitride powder
zirconium
dispersion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202011277829.8A
Other languages
Chinese (zh)
Other versions
CN114507073B (en
Inventor
影山谦介
小西隆史
相场直幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Electronic Chemicals Co Ltd
Original Assignee
Mitsubishi Materials Electronic Chemicals Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Electronic Chemicals Co Ltd filed Critical Mitsubishi Materials Electronic Chemicals Co Ltd
Priority to CN202011277829.8A priority Critical patent/CN114507073B/en
Publication of CN114507073A publication Critical patent/CN114507073A/en
Application granted granted Critical
Publication of CN114507073B publication Critical patent/CN114507073B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/58007Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on refractory metal nitrides
    • C04B35/58028Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on refractory metal nitrides based on zirconium or hafnium nitrides
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/0072Heat treatment
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/656Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
    • C04B2235/6567Treatment time

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

The invention provides a high insulation material which can obtain high insulation and high blackness and has high insulation. The volume resistivity of the zirconium nitride powder of the present invention in a state of a green compact compacted with a pressure of 5MPa was 107A particle size distribution D of not less than Ω · cm and obtained by ultrasonic dispersion for 5 minutes in a state diluted with water or an alcohol having 2 to 5 carbon atoms90Is 10 μm or less. In addition, the above-described zirconium nitride powder may be dispersed in an acrylic monomer or an epoxy monomer to prepare a monomer dispersion. Further, the above-described zirconium nitride powder may be dispersed as a black pigment in a dispersion medium and mixed with a resin to prepare a black composition.

Description

氮化锆粉末及其制备方法Zirconium nitride powder and preparation method thereof

技术领域technical field

本发明涉及适合用作具有高紫外线透射率和高黑色度、并且具有高绝缘性的黑色颜料的氮化锆粉末及其制备方法。The present invention relates to a zirconium nitride powder suitable for use as a black pigment having high ultraviolet transmittance and high blackness, and having high insulating properties, and a preparation method thereof.

背景技术Background technique

以往,公开了一种氮化锆粉末,所述氮化锆粉末通过BET法测定的比表面积为20m2/g~90m2/g,在X射线衍射图中具有氮化锆的峰,而不具有二氧化锆的峰和低价氧化锆的峰(例如参照专利文献1 (权利要求1、段落[0016]))。该氮化锆粉末在该粉末浓度为50ppm的分散液透射光谱中,370nm的光透射率X至少为18%,550nm的光透射率Y为12%以下,550nm的光透射率Y与370nm的光透射率X之比(X/Y)为2.5以上。Conventionally, a zirconium nitride powder has been disclosed. The zirconium nitride powder has a specific surface area of 20 m 2 /g to 90 m 2 /g measured by the BET method, and has a peak of zirconium nitride in an X-ray diffraction pattern, and does not It has a peak of zirconium dioxide and a peak of subvalent zirconium oxide (for example, refer to Patent Document 1 (claim 1, paragraph [0016])). In the transmission spectrum of the dispersion liquid of the zirconium nitride powder with the powder concentration of 50ppm, the light transmittance X at 370nm is at least 18%, the light transmittance Y at 550nm is 12% or less, the light transmittance Y at 550nm and the light at 370nm are at least 18%. The ratio (X/Y) of the transmittance X is 2.5 or more.

这样构成的氮化锆粉末由于比表面积为20m2/g以上,所以在制成抗蚀剂的情况下有抑制沉降的效果,另外由于为90m2/g以下,所以有具有充分的遮光性的效果。另外,由于在X射线衍射图中具有氮化锆的峰,而不具有二氧化锆的峰、低价氧化锆的峰和低价氧氮化锆的峰,所以具有在粉末浓度为50ppm的分散液透射光谱中370nm的光透射率X至少为18%,550nm的光透射率Y为12%以下的特征,另外具有X/Y为2.5以上的特征。由于X/Y为2.5以上,所以有更多地透射紫外线的特点。因此,在作为黑色颜料形成黑色图案化膜时可形成高分辨率的图案化膜,而且所形成的图案化膜具有高遮光性能。The zirconium nitride powder thus constituted has a specific surface area of 20 m 2 /g or more, so it has the effect of suppressing sedimentation when used as a resist, and has a sufficient light-shielding property because it is 90 m 2 /g or less. Effect. In addition, since it has a peak of zirconium nitride in the X-ray diffraction pattern, and does not have a peak of zirconium dioxide, a peak of subvalent zirconium oxide, and a peak of subvalent zirconium oxynitride, it has dispersion at a powder concentration of 50 ppm In the liquid transmission spectrum, the light transmittance X at 370 nm is at least 18%, the light transmittance Y at 550 nm is 12% or less, and X/Y is 2.5 or more. Since X/Y is 2.5 or more, more ultraviolet rays are transmitted. Therefore, a high-resolution patterned film can be formed when a black patterned film is formed as a black pigment, and the formed patterned film has high light-shielding performance.

现有技术文献prior art literature

专利文献Patent Literature

专利文献1:日本特开2017-222559号公报。Patent Document 1: Japanese Patent Laid-Open No. 2017-222559.

发明内容SUMMARY OF THE INVENTION

发明所要解决的课题The problem to be solved by the invention

就上述专利文献1所示的氮化锆粉末而言,若将氮化锆粗粉末分散在分散媒质中,并使用珠磨机(介质:氧化锆)等提高分散性,则虽然可得到高绝缘性,但若将该氮化锆粉末直接捏合到高粘度的树脂糊料中,则氮化锆粗粉末残留,分散性不足。因此,在将氮化锆粉末用作黑色颜料时,在黑色涂料的着色力降低的同时,有电阻值因氮化锆粗粉末的残留而降低的不良情况。另外,若将上述氮化锆粗粉末用干式粉碎机等强制粉碎,则粉末直径变小,并且引起粉末表面的氧化反应,因此,虽然绝缘性提高,但有黑色涂料的黑色度降低的问题。In the case of the zirconium nitride powder shown in the above-mentioned Patent Document 1, if the coarse zirconium nitride powder is dispersed in a dispersion medium, and the dispersibility is improved by using a bead mill (medium: zirconia) or the like, although high insulation can be obtained. However, if the zirconium nitride powder is directly kneaded into a high-viscosity resin paste, the coarse zirconium nitride powder remains and the dispersibility is insufficient. Therefore, when the zirconium nitride powder is used as a black pigment, the tinting strength of the black paint is lowered, and there is a disadvantage that the resistance value is lowered due to the residue of the zirconium nitride coarse powder. In addition, when the above-mentioned coarse zirconium nitride powder is forcibly pulverized with a dry pulverizer or the like, the diameter of the powder becomes small, and an oxidation reaction occurs on the surface of the powder. Therefore, although the insulating properties are improved, there is a problem that the blackness of the black paint decreases. .

本发明的第1目的在于,提供在可得到高绝缘性和高黑色度的同时,具有高绝缘性的氮化锆粉末及其制备方法。本发明的第2目的在于,提供通过低温湿式介质粉碎或通过利用发热量少的喷射磨机的粉碎,制备可维持高黑色度的氮化锆粉末的方法。本发明的第3目的在于,提供通过在惰性气体气氛中进行焙烧,制备可提高黑色膜的绝缘性的氮化锆粉末的方法。The first object of the present invention is to provide a zirconium nitride powder having high insulating properties while obtaining high insulating properties and high blackness, and a method for producing the same. The second object of the present invention is to provide a method for producing a zirconium nitride powder capable of maintaining a high blackness by pulverizing in a low-temperature wet medium or pulverizing with a jet mill having a small calorific value. The third object of the present invention is to provide a method for producing a zirconium nitride powder capable of improving the insulating properties of a black film by firing in an inert gas atmosphere.

解决课题的手段means of solving problems

本发明的第1观点为氮化锆粉末,所述氮化锆粉末在用5MPa的压力压实的压坯的状态下的体电阻率为107Ω·cm以上,并且在用水或碳原子数在2~5的范围内的醇稀释的状态下超声波分散5分钟时的粒度分布D90为10μm以下。A first aspect of the present invention is a zirconium nitride powder having a volume resistivity of 10 7 Ω·cm or more in a state of a compact compacted with a pressure of 5 MPa, and having a volume resistivity of 10 7 Ω·cm or more when subjected to water or carbon atoms. The particle size distribution D 90 at the time of ultrasonic dispersion for 5 minutes in the state of dilution with alcohol in the range of 2 to 5 was 10 μm or less.

本发明的第2观点为氮化锆粉末的制备方法,所述制备方法包括:通过热剂法或等离子体合成法生成氮化锆粗粉末的工序;通过将该氮化锆粗粉末在10℃以下的分散媒质温度下进行低温湿式介质粉碎或在0.3MPa以上的气压下进行喷射磨机粉碎,制作氮化锆前体粉末的工序,所述氮化锆前体粉末在用水或碳原子数在3~5的范围内的醇稀释的状态下超声波分散5分钟时的粒度分布D90为10μm以下;和通过将该粉碎的氮化锆前体粉末在惰性气体气氛中进行焙烧,制备氮化锆粉末的工序,所述氮化锆粉末在用5MPa的压力压实的压坯的状态下的体电阻率为107Ω·cm以上。A second aspect of the present invention is a method for producing a zirconium nitride powder, the production method comprising the steps of: generating a coarse zirconium nitride powder by a thermal agent method or a plasma synthesis method; A step of producing a zirconium nitride precursor powder by performing low-temperature wet-medium pulverization at the following dispersion medium temperature or jet mill pulverization under an air pressure of 0.3 MPa or more, the zirconium nitride precursor powder being mixed with water or carbon atoms in The particle size distribution D 90 at the time of ultrasonic dispersion for 5 minutes in the state of dilution with alcohol in the range of 3 to 5 is 10 μm or less; and by calcining the pulverized zirconium nitride precursor powder in an inert gas atmosphere to prepare zirconium nitride In the step of powdering, the zirconium nitride powder has a volume resistivity of 10 7 Ω·cm or more in a state of a compact compacted with a pressure of 5 MPa.

本发明的第3观点为单体分散体,所述单体分散体是将根据第1观点所述的氮化锆粉末分散在丙烯酸类单体(acrylic monomer)或环氧单体中而得到的。A third aspect of the present invention is a monomer dispersion obtained by dispersing the zirconium nitride powder according to the first aspect in an acrylic monomer or an epoxy monomer .

本发明的第4观点为黑色组合物,所述黑色组合物是将根据第1观点所述的氮化锆粉末作为黑色颜料分散在分散媒质中并且混合树脂而得到的。A fourth aspect of the present invention is a black composition obtained by dispersing the zirconium nitride powder according to the first aspect as a black pigment in a dispersion medium and mixing resin.

本发明的第5观点为黑色膜的制作方法,所述制作方法包括:将根据第3观点所述的单体分散体涂布在基板上而形成涂膜的工序,和使该涂膜热固化或紫外线固化而制作黑色膜的工序。A fifth aspect of the present invention is a method for producing a black film comprising the steps of applying the monomer dispersion according to the third aspect on a substrate to form a coating film, and thermally curing the coating film Or the process of UV curing to make a black film.

本发明的第6观点为黑色膜的制作方法,所述制作方法包括:将根据第4观点所述的黑色组合物涂布在基板上而形成涂膜的工序,和使该涂膜热固化或紫外线固化而制作黑色膜的工序。A sixth aspect of the present invention is a method for producing a black film comprising the steps of applying the black composition according to the fourth aspect to a substrate to form a coating film, and thermally curing or thermally curing the coating film. The process of making a black film by ultraviolet curing.

发明的效果effect of invention

由于本发明的第1观点的氮化锆粉末在用5MPa的压力压实的压坯的状态下的体电阻率为107Ω·cm以上,所以制作厚度为10μm~100μm左右的黑色厚膜时的绝缘性可提高。另外,由于氮化锆粉末在用水或碳原子数在2~5的范围内的醇稀释的状态下超声波分散5分钟时的粒度分布D90为10μm以下,所以可得到不存在氮化锆粗粉末的良好的分散体或分散液。由此,由使用了上述氮化锆粉末的分散体或分散液制作的黑色膜在可得到高绝缘性和高黑色度的同时,具有高绝缘性。Since the zirconium nitride powder of the first aspect of the present invention has a volume resistivity of 10 7 Ω·cm or more in a compacted state with a pressure of 5 MPa, when a thick black film having a thickness of about 10 μm to 100 μm is produced The insulation can be improved. In addition, since the particle size distribution D90 of the zirconium nitride powder in the state of being diluted with water or an alcohol having a carbon number in the range of 2 to 5 by ultrasonic dispersion for 5 minutes is 10 μm or less, it is possible to obtain a coarse powder of zirconium nitride that does not exist. good dispersion or dispersion. Thereby, the black film produced from the dispersion or dispersion liquid using the above-mentioned zirconium nitride powder can obtain high insulating properties and high blackness, and has high insulating properties.

在本发明的第2观点的氮化锆粉末的制备方法中,若将氮化锆粗粉末在10℃以下的分散媒质温度下进行低温湿式介质粉碎,则发热量少,因此不会进行氮化锆的表面氧化,可维持高黑色度。另外,若将氮化锆粗粉末在0.3MPa以上的气压下进行喷射磨机粉碎,则氮化锆粗粉末不残留,可提高黑色膜的绝缘性。此外,通过将上述粉碎的氮化锆前体粉末在惰性气体气氛中进行焙烧,可提高黑色膜的绝缘性。In the method for producing a zirconium nitride powder according to the second aspect of the present invention, if the coarse zirconium nitride powder is pulverized in a low-temperature wet medium at a dispersion medium temperature of 10° C. or lower, the calorific value is small, so that nitriding is not performed. The surface of zirconium is oxidized to maintain high blackness. In addition, when the zirconium nitride coarse powder is pulverized by a jet mill under an air pressure of 0.3 MPa or more, the zirconium nitride coarse powder does not remain, and the insulating properties of the black film can be improved. In addition, the insulating properties of the black film can be improved by firing the pulverized zirconium nitride precursor powder in an inert gas atmosphere.

由于本发明的第3观点的单体分散体是将本发明的第1观点的氮化锆粉末分散在丙烯酸类单体或环氧单体中而得到的,所以即使这些单体的粘度较高,也可保持氮化锆粉末相对于上述单体的分散性良好。由此,使用单体分散体而得到的黑色膜在可得到高绝缘性和高黑色度的同时,具有高绝缘性。Since the monomer dispersion of the third aspect of the present invention is obtained by dispersing the zirconium nitride powder of the first aspect of the present invention in an acrylic monomer or an epoxy monomer, even if these monomers have high viscosity , the dispersibility of the zirconium nitride powder relative to the above monomers can also be kept good. As a result, the black film obtained by using the monomer dispersion has high insulating properties while obtaining high insulating properties and high blackness.

由于本发明的第4观点的黑色组合物是将本发明的第1观点的氮化锆粉末作为黑色颜料分散在分散媒质中并且混合树脂而得到的,所以氮化锆粉末均匀地分散在分散媒质中。由此,使用黑色组合物而得到的黑色膜在可得到高绝缘性和高黑色度的同时,具有高绝缘性。The black composition of the fourth aspect of the present invention is obtained by dispersing the zirconium nitride powder of the first aspect of the present invention as a black pigment in a dispersion medium and mixing a resin, so that the zirconium nitride powder is uniformly dispersed in the dispersion medium middle. As a result, the black film obtained by using the black composition has high insulating properties while obtaining high insulating properties and high blackness.

在本发明的第5观点的黑色膜的制作方法中,由于在将上述单体分散体涂布在基板上而形成涂膜后,使该涂膜热固化或紫外线固化而制作黑色膜,所以黑色膜在可得到高绝缘性和高黑色度的同时,具有高绝缘性。In the method for producing a black film according to the fifth aspect of the present invention, after the above-mentioned monomer dispersion is applied on a substrate to form a coating film, the coating film is thermally cured or UV-cured to produce a black film, so the black color is The film has high insulating properties while obtaining high insulating properties and high blackness.

在本发明的第6观点的黑色膜的制作方法中,由于在将上述黑色组合物涂布在基板上而形成涂膜后,使该涂膜热固化或紫外线固化而制作黑色膜,所以黑色膜在可得到高绝缘性和高黑色度的同时,具有高绝缘性。In the method for producing a black film according to the sixth aspect of the present invention, after applying the above-mentioned black composition on a substrate to form a coating film, the black film is produced by thermally curing or ultraviolet curing the coating film. It has high insulating properties while obtaining high insulating properties and high blackness.

具体实施方式Detailed ways

接下来,对实施本发明的方式进行说明。本实施方式的氮化锆粉末在用5MPa的压力压实的压坯的状态下的体电阻率为107Ω·cm以上,优选为108Ω·cm以上,并且在用水或碳原子数在2~5的范围内的醇稀释的状态下超声波分散5分钟时的粒度分布D90为10μm以下,优选为8μm以下。在这里,将上述体电阻率限定为107Ω·cm以上的原因在于,若低于107Ω·cm,则使用氮化锆粉末制作厚度为1μm~100μm左右的黑色厚膜时的绝缘性会降低。另外,将上述粒度分布D90限定为10μm以下的原因在于,若超过10μm,则氮化锆粗粉末残留,得不到良好的分散体和黑色膜。Next, the form for implementing this invention is demonstrated. The zirconium nitride powder of the present embodiment has a volume resistivity of 10 7 Ω·cm or more, preferably 10 8 Ω·cm or more, in the state of a compact compacted with a pressure of 5 MPa, and has a volume resistivity of 10 7 Ω·cm or more in water or the number of carbon atoms in The particle size distribution D 90 at the time of ultrasonic dispersion for 5 minutes in the state of being diluted with alcohol in the range of 2 to 5 is 10 μm or less, preferably 8 μm or less. Here, the reason why the above-mentioned volume resistivity is limited to 10 7 Ω·cm or more is that if it is less than 10 7 Ω·cm, the insulating properties when a black thick film with a thickness of about 1 μm to 100 μm is produced using zirconium nitride powder will decrease. In addition, the reason why the particle size distribution D 90 is limited to 10 μm or less is that if it exceeds 10 μm, coarse zirconium nitride powder remains, and a good dispersion and black film cannot be obtained.

上述体电阻率例如使用三菱化学公司制的低电阻率计Loresta-GP (型号:UV-3101PC),通过四端子四探针法测定。该四端子四探针法是指,在试样(压坯)的表面上将4根针状电极隔开规定的间隔放置在一条直线上,在外侧的2根针状电极间流过一定的电流,测定在内侧的2根针状电极间产生的电位差,由此求得体电阻率的方法。The said volume resistivity is measured by the four-terminal four-probe method using, for example, a low-resistivity meter Loresta-GP (model number: UV-3101PC) manufactured by Mitsubishi Chemical Corporation. In the four-terminal four-probe method, four needle-shaped electrodes are placed on a straight line at a predetermined interval on the surface of a sample (green compact), and a constant flow of a predetermined amount of needle-shaped electrodes flows between the two outer needle-shaped electrodes. A method of obtaining the volume resistivity by measuring the potential difference generated between the two needle-shaped electrodes on the inner side of the current.

另外,氮化锆粉末为一次粒子凝聚而成的二次粒子的状态,是通过激光衍射散射法测定的体积基准的粒度分布。在这里,基于激光衍射散射法的体积基准的粒度分布的测定如下进行。首先,将0.1g的氮化锆粉末(二次粒子)投入到20g的离子交换水中,照射5分钟的25kHz的超声波,使氮化锆粉末分散在离子交换水中。接着,将得到的氮化锆粉末的分散液适量滴加到激光衍射散射式粒度分布测定装置(堀场制作所制商品名:LA-300)的观察池中,依据该装置的程序测定粒度分布。通过该激光衍射散射法测定的粒度分布为氮化锆粉末的一次粒子凝聚而成的二次粒子的粒度分布。需说明的是,代替离子交换水,也可使用碳原子数在2~5的范围内的醇。作为碳原子数为2的醇,可列举出乙醇;作为碳原子数为3的醇,可列举出1-丙醇、2-丙醇等;作为碳原子数为4的醇,可列举出1-丁醇、2-丁醇等;作为碳原子数为5的醇,可列举出1-戊醇、2-戊醇等。需说明的是,若碳原子数为1以下,则有挥发性高从而测定值不稳定的不良情况;若碳原子数为6以上,则有亲和性不足从而测定值不稳定的不良情况。In addition, the zirconium nitride powder is a state of secondary particles in which primary particles are aggregated, and is a particle size distribution on a volume basis measured by a laser diffraction scattering method. Here, the measurement of the volume-based particle size distribution by the laser diffraction scattering method is performed as follows. First, 0.1 g of zirconium nitride powder (secondary particles) was put into 20 g of ion-exchanged water, and 25 kHz ultrasonic waves were irradiated for 5 minutes to disperse the zirconium nitride powder in the ion-exchanged water. Next, an appropriate amount of the obtained dispersion of zirconium nitride powder was dropped into the observation cell of a laser diffraction scattering particle size distribution measuring device (trade name: LA-300, manufactured by Horiba, Ltd.), and the particle size distribution was measured according to the program of the device. . The particle size distribution measured by this laser diffraction scattering method is the particle size distribution of the secondary particles in which the primary particles of the zirconium nitride powder are aggregated. It should be noted that, instead of ion-exchanged water, an alcohol having a carbon number in the range of 2 to 5 may be used. Examples of the alcohol having 2 carbon atoms include ethanol; examples of the alcohol having 3 carbon atoms include 1-propanol, 2-propanol, and the like; and examples of the alcohol having 4 carbon atoms include 1 -Butanol, 2-butanol, etc.; Examples of the alcohol having 5 carbon atoms include 1-pentanol, 2-pentanol, and the like. It should be noted that when the number of carbon atoms is 1 or less, the volatility is high and the measurement value is not stable, and when the carbon number is 6 or more, the affinity is insufficient and the measurement value is not stable.

对这样构成的氮化锆粉末的制备方法进行说明。首先,通过热剂法或等离子体合成法生成氮化锆粗粉末。在本说明书中,热剂法(thermit method)指在金属镁的存在下使氧化锆粉末与N2气(氮气)反应而还原的方法。在该实施方式中,作为氧化锆粉末,使用二氧化锆(ZrO2)粉末或被覆有二氧化硅的二氧化锆(ZrO2)粉末。另外,在金属镁粉末中添加氮化镁(Mg3N2)粉末。将这些粉末作为起始原料,在特定的气氛下,以特定的温度和时间进行焙烧,由此生成通过BET法测定的比表面积为20m2/g~90m2/g的氮化锆粗粉末。A method for producing the zirconium nitride powder having such a structure will be described. First, a coarse powder of zirconium nitride is produced by a thermal agent method or a plasma synthesis method. In the present specification, the thermal method (thermit method) refers to a method of reducing zirconia powder by reacting it with N 2 gas (nitrogen gas) in the presence of metallic magnesium. In this embodiment, as the zirconia powder, zirconia (ZrO 2 ) powder or silica-coated zirconia (ZrO 2 ) powder is used. In addition, magnesium nitride (Mg 3 N 2 ) powder is added to the metallic magnesium powder. These powders are used as starting materials, and are calcined in a specific atmosphere at a specific temperature and time to produce a zirconium nitride coarse powder having a specific surface area measured by the BET method of 20 m 2 /g to 90 m 2 /g.

[二氧化锆粉末][Zirconium dioxide powder]

作为二氧化锆粉末,例如单斜晶系二氧化锆、立方晶系二氧化锆、钇稳定化二氧化锆等二氧化锆的粉末均可使用,从氮化锆粉末的生成率升高的观点出发,优选单斜晶系二氧化锆粉末。另外,为了得到通过BET法测定的比表面积为20m2/g~90m2/g的氮化锆粗粉末,以由比表面积的测定值进行球形换算而得的平均一次粒径计,二氧化锆粉末或被覆有二氧化硅的二氧化锆粉末的各自平均一次粒径和氧化镁粉末的平均一次粒径优选为500nm以下,且从粉末的易处理性出发,以平均一次粒径计,优选为500nm以下且10nm以上。As the zirconium dioxide powder, for example, powders of zirconium dioxide such as monoclinic zirconium dioxide, cubic zirconium dioxide, and yttrium-stabilized zirconium dioxide can be used, from the viewpoint of increasing the generation rate of zirconium nitride powder From the standpoint, monoclinic zirconium dioxide powder is preferred. In addition, in order to obtain a zirconium nitride coarse powder having a specific surface area of 20 m 2 /g to 90 m 2 /g measured by the BET method, the zirconium dioxide powder was calculated as an average primary particle size obtained by performing spherical conversion from the measured value of the specific surface area. Or the average primary particle size of the silica-coated zirconium dioxide powder and the average primary particle size of the magnesium oxide powder are preferably 500 nm or less, and the average primary particle size is preferably 500 nm from the viewpoint of easy handling of the powder. less than 10 nm or more.

[被覆有二氧化硅的二氧化锆粉末][Silica-coated zirconia powder]

被覆有二氧化硅的二氧化锆粉末是将二氧化锆粉末和硅酸酯溶胶凝胶液混合而制备浆料,将该浆料干燥并粉碎而得到的。关于二氧化锆与硅酸酯溶胶凝胶液的混合比例,以质量比计,优选二氧化锆:硅酸酯溶胶凝胶液的二氧化硅量为(90.0~99.5):(10.0~0.5)。若二氧化硅量低于下限值,则二氧化锆表面的二氧化硅被覆率过低;若二氧化硅量超过上限值,则在使用得到的氮化锆粉末形成图案化膜时有遮光性不足的不良情况。The silica-coated zirconia powder is obtained by mixing zirconia powder and a silicate sol-gel solution to prepare a slurry, and drying and pulverizing the slurry. Regarding the mixing ratio of zirconium dioxide and the silicate sol-gel solution, in terms of mass ratio, it is preferable that the amount of zirconium dioxide: the silica content of the silicate sol-gel solution is (90.0~99.5):(10.0~0.5) . If the amount of silica is less than the lower limit, the coverage rate of silica on the surface of the zirconium dioxide will be too low; if the amount of silica exceeds the upper limit, the resulting zirconium nitride powder may be used to form a patterned film. Insufficient light-shielding properties.

为了将二氧化锆均匀地混合到溶胶凝胶液中,优选将二氧化锆粉末加入到水、醇等分散液中并混合后,将该混合液添加混合到硅酸酯溶胶凝胶液中。硅酸酯溶胶凝胶液优选将硅酸甲酯、硅酸乙酯等硅酸酯溶解在水、醇等溶剂中而得到的液体。关于二氧化锆与溶胶凝胶液的混合比例,可按照使得到的浆料的固体成分浓度以固体成分计为10质量%~50质量%的方式来确定。将得到的浆料在大气中或真空气氛下在60℃~350℃的温度下干燥1分钟~360分钟,得到被覆有二氧化硅的二氧化锆粉末。In order to uniformly mix zirconium dioxide into the sol-gel liquid, it is preferable to add and mix the zirconium dioxide powder into a dispersion liquid such as water or alcohol, and then add and mix the mixed liquid into the silicate sol-gel liquid. The silicate sol-gel liquid is preferably a liquid obtained by dissolving silicate esters such as methyl silicate and ethyl silicate in a solvent such as water and alcohol. The mixing ratio of zirconium dioxide and the sol-gel liquid can be determined so that the solid content concentration of the obtained slurry is 10% by mass to 50% by mass in terms of solid content. The obtained slurry is dried at a temperature of 60° C. to 350° C. for 1 minute to 360 minutes in the air or in a vacuum atmosphere to obtain silica-coated zirconia powder.

通过在起始原料中使用被覆有二氧化硅的二氧化锆粉末,在焙烧时可抑制晶粒生长,可得到通过BET法测定的比表面积为20m2/g~90m2/g的更微细的氮化锆粉末。此时,氮化锆粉末以10.0质量%以下、优选9.0质量%以下的比例含有氧化硅和/或氮化硅。若超过10.0质量%,则在使用得到的氮化锆粉末形成图案化膜时有遮光性不足的不良情况。By using silica-coated zirconium dioxide powder as the starting material, grain growth can be suppressed during calcination, and finer particles with a specific surface area of 20 m 2 /g to 90 m 2 /g as measured by the BET method can be obtained. Zirconium nitride powder. At this time, the zirconium nitride powder contains silicon oxide and/or silicon nitride in a ratio of 10.0 mass % or less, preferably 9.0 mass % or less. When it exceeds 10.0 mass %, when a patterned film is formed using the obtained zirconium nitride powder, the light-shielding property may be insufficient.

[金属镁粉末][Metal magnesium powder]

若金属镁粉末的粒径过小,则反应急剧进行,从而操作上的危险性升高,因此金属镁粉末优选粒径以通过筛的筛目(mesh pass)计为100μm~1000μm的粒状的粉末,特别优选200μm~500μm的粒状的粉末。但是,金属镁即使不全部在上述粒径范围内,只要其80质量%以上、特别是90质量%以上在上述范围内也可。If the particle size of the magnesium metal powder is too small, the reaction proceeds rapidly and the risk of handling increases. Therefore, the magnesium metal powder is preferably a granular powder having a particle size of 100 μm to 1000 μm in terms of mesh pass. , particularly preferably a granular powder of 200 μm to 500 μm. However, even if not all of the metallic magnesium falls within the above-mentioned particle size range, 80% by mass or more, particularly 90% by mass or more, may fall within the above-mentioned range.

金属镁粉末相对于二氧化锆粉末的添加量的多寡与后述气氛气体中的氨气和氢气的量一起对二氧化锆的还原力产生影响。若金属镁的量过少,则还原不足,从而难以得到目标氮化锆粉末;若过多,则反应温度因过剩的金属镁而急剧上升,从而有引起粉末的晶粒生长的可能,并且变得不经济。金属镁粉末根据其粒径的大小,以使金属镁为二氧化锆的2.0倍摩尔~6.0倍摩尔的比例的方式,将金属镁粉末添加到二氧化锆粉末中并混合。若低于2.0倍摩尔,则二氧化锆的还原反应不充分,若超过6.0倍摩尔,则反应温度因过剩的金属镁而急剧上升,从而有引起粉末的晶粒生长的可能,并且变得不经济。The amount of the magnesium metal powder to be added to the zirconium dioxide powder affects the reducing power of the zirconium dioxide together with the amounts of ammonia gas and hydrogen gas in the atmospheric gas described later. If the amount of metallic magnesium is too small, the reduction will be insufficient, and it will be difficult to obtain the target zirconium nitride powder; if the amount is too large, the reaction temperature will rise sharply due to the excess metallic magnesium, which may cause grain growth of the powder, and will Not economical. The magnesium metal powder is added to and mixed with the zirconium dioxide powder in a ratio of 2.0 to 6.0 times the mole of the zirconium dioxide depending on the particle size of the metal magnesium powder. If it is less than 2.0 times the mol, the reduction reaction of zirconium dioxide will be insufficient, and if it exceeds 6.0 times the mol, the reaction temperature will be rapidly increased due to the excess metal magnesium, and the grain growth of the powder may be caused, and it will become unsatisfactory. economy.

[氮化镁粉末][Magnesium Nitride Powder]

氮化镁粉末在焙烧时被覆氮化锆表面,从而缓和金属镁的还原力,以防止氮化锆粉末的烧结和晶粒生长。氮化镁粉末根据其粒径的大小,以使氮化镁为二氧化锆的0.3倍摩尔~3.0倍摩尔的比例的方式,添加到二氧化锆中并混合。若低于0.3倍摩尔,则无法防止氮化锆粉末的烧结;若超过3.0倍摩尔,则有在焙烧后的酸清洗时所需要的酸性溶液的使用量增加的不良情况。优选为0.4倍摩尔~2.0倍摩尔。关于氮化镁粉末,以由比表面积的测定值进行球形换算而得的平均一次粒径计,优选为1000nm以下;从粉末的易处理性出发,以平均一次粒径计,优选为10nm以上且500nm以下。需说明的是,不只是氮化镁,氧化镁也对预防氮化锆的烧结有效,因此也可在氮化镁中混合一部分氧化镁来使用。The magnesium nitride powder coats the surface of the zirconium nitride during sintering, thereby relaxing the reducing force of the metal magnesium to prevent the sintering and grain growth of the zirconium nitride powder. Magnesium nitride powder is added to and mixed with zirconium dioxide in a ratio of 0.3 to 3.0 times the mole of zirconium dioxide, depending on the size of the particle diameter. If it is less than 0.3 times the mole, the sintering of the zirconium nitride powder cannot be prevented, and if it exceeds 3.0 times the mole, the usage amount of the acidic solution required for acid cleaning after baking may increase. Preferably, it is 0.4-fold mol to 2.0-fold mol. The magnesium nitride powder is preferably 1000 nm or less in terms of the average primary particle diameter obtained by converting the measured value of the specific surface area into spheres, and preferably 10 nm or more and 500 nm in terms of the average primary particle diameter in terms of easy handling of the powder. the following. It should be noted that not only magnesium nitride but also magnesium oxide is effective in preventing sintering of zirconium nitride, so it is also possible to use a part of magnesium oxide mixed with magnesium nitride.

[利用金属镁粉末的还原反应][Reduction Reaction Using Metal Magnesium Powder]

用于生成氮化锆粗粉末的利用金属镁的还原反应时的温度为650℃~900℃,优选为700℃~800℃。650℃是金属镁的熔化温度,若温度比该温度低,则二氧化锆的还原反应不会充分发生。另外,即使温度高于900℃,其效果也不会增加,在导致热能浪费的同时会进行粉末的烧结,从而不优选。另外,还原反应时间优选30分钟~90分钟,进一步优选30分钟~60分钟。The temperature at the time of the reduction reaction with metallic magnesium for producing the coarse zirconium nitride powder is 650°C to 900°C, preferably 700°C to 800°C. 650° C. is the melting temperature of metallic magnesium, and if the temperature is lower than this temperature, the reduction reaction of zirconium dioxide does not sufficiently occur. In addition, even if the temperature is higher than 900° C., the effect does not increase, and the powder is sintered while wasting heat energy, which is not preferable. In addition, the reduction reaction time is preferably 30 minutes to 90 minutes, and more preferably 30 minutes to 60 minutes.

进行上述还原反应时的反应容器优选具有盖子的容器,以使反应时原料和产物不会飞散。其原因在于,若金属镁开始熔化,则还原反应急剧进行,温度随之上升,容器内部的气体膨胀,由此,容器内部的物质有飞散到外部的可能。The reaction vessel in which the above-mentioned reduction reaction is performed is preferably a vessel with a lid so that the raw materials and products are not scattered during the reaction. The reason for this is that when the metal magnesium begins to melt, the reduction reaction rapidly proceeds, the temperature rises, and the gas inside the container expands, thereby possibly scattering the substance inside the container to the outside.

[利用金属镁粉末的还原反应时的气氛气体][Atmospheric gas at the time of reduction reaction with magnesium metal powder]

气氛气体为氮气单质、或氮气与氢气的混合气体、或氮气与氨气的混合气体。上述还原反应在上述混合气体的气流中进行。混合气体中的氮气具有防止金属镁或还原产物与氧的接触、从而防止它们氧化,同时使氮与锆反应而生成氮化锆的作用。混合气体中的氢气或氨气具有与金属镁一起还原二氧化锆的作用。在上述混合气体中优选含有0体积%~40体积%氢气,进一步优选含有10体积%~30体积%氢气。另外,在上述混合气体中优选含有0体积%~50体积%氨气,进一步优选含有0体积%~40体积%氨气。通过使用该具有还原力的气氛气体,最终可制备不含有低价氧化锆和低价氧氮化锆的氮化锆粉末。另一方面,若氢气的比例或氮气的比例比该范围高,则虽然进行还原,但氮源变少,因此会生成低价氧化锆或低价氧氮化锆,从而不优选。另外,认为氨气的比例比氢气的比例高是因为氨的气体氮化能力比氢高。The atmosphere gas is nitrogen element, or a mixed gas of nitrogen and hydrogen, or a mixed gas of nitrogen and ammonia. The above-mentioned reduction reaction is carried out in the gas flow of the above-mentioned mixed gas. Nitrogen in the mixed gas has the function of preventing the metal magnesium or the reduction product from contacting with oxygen, thereby preventing them from oxidizing, and simultaneously reacting nitrogen and zirconium to generate zirconium nitride. Hydrogen or ammonia in the mixed gas has the effect of reducing zirconium dioxide together with metal magnesium. The above-mentioned mixed gas preferably contains 0 to 40% by volume of hydrogen, and more preferably contains 10 to 30% by volume of hydrogen. Moreover, it is preferable to contain 0 to 50 volume% of ammonia gas in the said mixed gas, and it is more preferable to contain 0 to 40 volume% of ammonia gas. By using the atmospheric gas having reducing power, a zirconium nitride powder that does not contain subvalent zirconium oxide and subvalent zirconium oxynitride can be finally produced. On the other hand, if the ratio of hydrogen gas or nitrogen gas is higher than this range, the reduction proceeds, but the nitrogen source decreases, so that subvalent zirconium oxide or subvalent zirconium oxynitride is produced, which is not preferable. In addition, it is considered that the ratio of ammonia gas is higher than that of hydrogen gas because the gas nitriding ability of ammonia is higher than that of hydrogen.

另一方面,利用等离子体合成法生成氮化锆粗粉末的方法是将金属锆粉末引入到等离子体纳米粒子制备装置中,在N2气气氛中得到氮化锆纳米粒子的方法。关于通过该方法合成的氮化锆,可得到20m2/g~90m2/g的通过BET法测定的比表面积的氮化锆,但有作为原料的金属锆的燃烧性高的危险和成本升高的缺点。需说明的是,由于通过等离子体合成法生成的纳米粒子会因冷却过程、产品取出过程中的急剧的表面氧化、附着、凝聚等而粗大化,从而成为粗粉末,因此通过等离子体合成法生成的氮化锆也作为氮化锆粗粉末。On the other hand, the method of generating coarse zirconium nitride powder by plasma synthesis is a method of introducing metal zirconium powder into a plasma nanoparticle preparation device, and obtaining zirconium nitride nanoparticles in an N 2 gas atmosphere. For zirconium nitride synthesized by this method, zirconium nitride with a specific surface area of 20 m 2 /g to 90 m 2 /g can be obtained, but there is a risk of high flammability of metal zirconium used as a raw material and an increase in cost. High disadvantage. It should be noted that the nanoparticles produced by the plasma synthesis method are coarsened by rapid surface oxidation, adhesion, aggregation, etc. in the cooling process and the product extraction process, and become coarse powder, so they are produced by the plasma synthesis method. The zirconium nitride is also used as zirconium nitride coarse powder.

接着,通过将该氮化锆粗粉末在10℃以下的分散媒质温度下进行低温湿式介质粉碎或在0.3MPa以上的气压下进行喷射磨机粉碎,制作氮化锆前体粉末,所述氮化锆前体粉末在用水或碳原子数在3~5的范围内的醇稀释的状态下超声波分散5分钟时的粒度分布D90为10μm以下。需说明的是,该氮化锆前体粉末的通过BET法测定的比表面积为22m2/g~120m2/g。Next, the zirconium nitride precursor powder is produced by subjecting the zirconium nitride coarse powder to low-temperature wet-medium pulverization at a dispersion medium temperature of 10° C. or lower or jet mill pulverization at an air pressure of 0.3 MPa or more. The particle size distribution D 90 of the zirconium precursor powder in the state of being diluted with water or an alcohol having a carbon number in the range of 3 to 5 by ultrasonic dispersion for 5 minutes is 10 μm or less. It should be noted that the specific surface area of the zirconium nitride precursor powder measured by the BET method was 22 m 2 /g to 120 m 2 /g.

上述低温湿式介质粉碎法是指,将氮化锆粗粉末分散在离子交换水或碳原子数为2~5的醇等分散媒质中,在保持分散媒质温度为10℃以下的状态下,使用平均粒径为50μm~500μm的氧化锆、氧化铝、玻璃、聚氨酯树脂等介质的珠磨机粉碎法。在这里,保持分散媒质温度为10℃以下的原因在于,若超过10℃,则会进行氮化锆前体粉末的粉碎,后述黑色膜的OD值会降低。需说明的是,为了保持分散媒质温度为10℃以下,可使用液态氮作为分散媒质,或使用干冰珠作为介质。另外,若用上述低温湿式介质粉碎法粉碎氮化锆粗粉末,则发热量少,因此不会进行氮化锆的表面氧化,而可维持高黑色度。The above-mentioned low-temperature wet medium pulverization method refers to dispersing the coarse powder of zirconium nitride in a dispersion medium such as ion-exchanged water or an alcohol having 2 to 5 carbon atoms, and keeping the temperature of the dispersion medium at 10°C or lower, using an average A bead mill pulverization method for media such as zirconia, alumina, glass, and polyurethane resin with a particle size of 50 μm to 500 μm. Here, the reason why the temperature of the dispersion medium is kept at 10° C. or lower is that, when it exceeds 10° C., the pulverization of the zirconium nitride precursor powder proceeds, and the OD value of the black film described later decreases. It should be noted that, in order to keep the temperature of the dispersion medium below 10°C, liquid nitrogen can be used as the dispersion medium, or dry ice beads can be used as the medium. In addition, when the zirconium nitride coarse powder is pulverized by the above-mentioned low-temperature wet medium pulverization method, the calorific value is small, so that the surface oxidation of the zirconium nitride does not proceed, and a high degree of blackness can be maintained.

另外,气压为0.3MPa以上的喷射磨机粉碎是指,将从喷嘴喷射的0.3MPa以上的高压的空气、氮等惰性气体或蒸气以超高速射流的形式与粉末碰撞,通过粉末彼此的冲击而使之粉碎至数μm水平的微粉末的装置,喷射的空气或蒸气达到音速左右。作为喷射磨机的特征,可列举出:因喷射的气体绝热膨胀而降低温度,因此可在低温下粉碎;从而即使是本发明中的氮化锆这样的还原性物质,氧化也可得到抑制。在这里,将上述气压限定为0.3MPa以上的原因在于,若低于0.3MPa,则氮化锆粗粉末会残留。需说明的是,若用上述喷射磨机粉碎法粉碎氮化锆粗粉末,则氮化锆粗粉末不会残留,可提高黑色膜的绝缘性。In addition, pulverization in a jet mill with a gas pressure of 0.3 MPa or more means that inert gas or steam such as high-pressure air, nitrogen, etc. of 0.3 MPa or more injected from a nozzle collides with the powder in the form of an ultra-high-speed jet, and the powder is crushed by the impact of each other. A device that pulverizes the powder to a level of several μm, and the ejected air or steam reaches about the speed of sound. The characteristics of the jet mill include that the temperature of the jetted gas is lowered due to the adiabatic expansion, so that it can be pulverized at a low temperature, and the oxidation of even a reducing substance such as zirconium nitride in the present invention can be suppressed. Here, the reason why the above-mentioned gas pressure is limited to 0.3 MPa or more is that if it is less than 0.3 MPa, the coarse zirconium nitride powder will remain. It should be noted that when the coarse zirconium nitride powder is pulverized by the above-mentioned jet mill pulverization method, the coarse zirconium nitride powder does not remain, and the insulating properties of the black film can be improved.

此外,通过将该粉碎的氮化锆前体粉末在惰性气体气氛中进行焙烧,制备在用5MPa的压力压实的压坯的状态下的体电阻率为107Ω·cm以上的氮化锆粉末。作为惰性气体,可列举出N2气、氦气、氩气等。上述焙烧温度优选在250℃~550℃的范围内,焙烧时间优选在1小时~5小时的范围内。在这里,将优选的焙烧温度限定在250℃~550℃的范围内的原因在于,若低于250℃,则电阻值的上升不充分,而若超过550℃,则会进行粉末彼此的熔合,粗粉末会增加。另外,将优选的焙烧时间限定在1小时~5小时的范围内的原因在于,若低于1小时,则电阻值的上升不充分,而即使超过5小时,效果也不会改变,从而不经济。需说明的是,通过将氮化锆前体粉末在惰性气体气氛中焙烧,可提高黑色膜的绝缘性。通过在惰性气体气氛中进行焙烧而提高黑色膜的绝缘性的详细机制不明确,但推测是氮化锆的粗粉末消失从而粉末的均匀性变好,接触点减少,或在黑色膜的表面形成极薄的绝缘层所导致的。Further, by calcining the pulverized zirconium nitride precursor powder in an inert gas atmosphere, zirconium nitride having a volume resistivity of 10 7 Ω·cm or more in the state of a compact compacted with a pressure of 5 MPa was prepared powder. As an inert gas, N 2 gas, helium gas, argon gas, etc. are mentioned. The calcination temperature is preferably in the range of 250°C to 550°C, and the calcination time is preferably in the range of 1 hour to 5 hours. Here, the reason why the preferable calcination temperature is limited to the range of 250°C to 550°C is that if the temperature is lower than 250°C, the increase in resistance value is insufficient, and if it exceeds 550°C, the powders are fused together. Coarse powder will increase. In addition, the reason why the preferable firing time is limited to the range of 1 hour to 5 hours is that if it is less than 1 hour, the rise of the resistance value will not be sufficient, and even if it exceeds 5 hours, the effect will not change, which is not economical. . It should be noted that the insulating properties of the black film can be improved by firing the zirconium nitride precursor powder in an inert gas atmosphere. The detailed mechanism for improving the insulating properties of the black film by firing in an inert gas atmosphere is not clear, but it is presumed that the coarse powder of zirconium nitride disappears, the uniformity of the powder is improved, the number of contact points decreases, or the black film is formed on the surface caused by a very thin insulating layer.

将上述氮化锆粉末分散在丙烯酸类单体或环氧单体中来制备单体分散体。该单体分散体可用于分散含有无机粉末的树脂组合物、树脂成型体等用途。另外,上述单体分散体还可含有金属氧化物粉末,还可含有增塑剂。作为增塑剂,无特殊限定,例如可列举出磷酸三丁酯、磷酸2-乙基己酯等磷酸酯系增塑剂,邻苯二甲酸二甲酯、邻苯二甲酸二丁酯等邻苯二甲酸酯系增塑剂,油酸丁酯、甘油单油酸酯等脂族一元酸酯系增塑剂,己二酸二丁酯、癸二酸二-2-乙基己酯等脂族二元酸酯系增塑剂,二甘醇二苯甲酸酯、三甘醇二-2-乙基丁酸酯等二元醇酯系增塑剂,乙酰基蓖麻油酸甲酯、乙酰基柠檬酸三丁酯等含氧酸酯系增塑剂等以往公知的增塑剂。此外,在单体分散体中还可添加其它的单体。作为其它的单体,无特殊限定,例如可列举出(甲基)丙烯酸、(甲基)丙烯酸酯等(甲基)丙烯酸系单体,苯乙烯、乙烯基甲苯、二乙烯基苯等苯乙烯系单体,氯乙烯、乙酸乙烯酯等乙酰基系单体,氨基甲酸酯丙烯酸酯等氨基甲酸酯系单体,上述各种多元醇类等以往公知的单体。需说明的是,考虑氮化锆粉末的分散性,单体分散体的粘度优选设定在10Pa·s~1000mPa·s(10mPa·s~1000mPa·s)的范围内。向单体中的分散也可与向溶剂中的分散同样地使用利用粉碎介质的研磨方式。另外,虽然不是必需成分,但为了进一步提高分散性,也可使用高分子分散剂。高分子分散剂的分子量为数千~数万是有效的,另外,作为吸附在颜料上的官能团,可列举出仲胺、叔胺、羧酸、磷酸、磷酸酯等,特别是叔胺、羧酸是有效的。代替高分子分散剂,添加少量的硅烷偶联剂对提高分散性也是有效的。另一方面,也可在实施行星搅拌后,通过数次三辊而得到分散液。另一方面,制备将氮化锆粉末作为黑色颜料分散在分散媒质中并且混合树脂而得到的黑色组合物。作为该上述分散媒质,可列举出丙二醇单甲基醚乙酸酯(PGMEA)、甲乙酮(MEK)、乙酸丁酯(BA)等。另外,作为上述树脂,可列举出丙烯酸类树脂、环氧树脂等。对于溶剂系分散,与单体分散同样地添加高分子分散剂是有效的,且与单体分散同样,分子量为数千至数万是有效的,作为官能团,叔胺、羧酸是有效的。A monomer dispersion is prepared by dispersing the above-mentioned zirconium nitride powder in an acrylic monomer or an epoxy monomer. The monomer dispersion can be used for dispersing resin compositions containing inorganic powders, resin moldings, and the like. In addition, the above-mentioned monomer dispersion may further contain a metal oxide powder, and may further contain a plasticizer. The plasticizer is not particularly limited, and examples thereof include phosphate-based plasticizers such as tributyl phosphate and 2-ethylhexyl phosphate; Phthalate-based plasticizers, aliphatic monobasic ester-based plasticizers such as butyl oleate and glycerol monooleate, dibutyl adipate, di-2-ethylhexyl sebacate, etc. Aliphatic dibasic acid ester plasticizers, diethylene glycol dibenzoate, triethylene glycol di-2-ethyl butyrate and other glycol ester plasticizers, methyl acetyl ricinoleate, Conventionally well-known plasticizers, such as oxyester-type plasticizers, such as acetyl tributyl citrate. In addition, other monomers may be added to the monomer dispersion. It does not specifically limit as another monomer, For example, (meth)acrylic-type monomers, such as (meth)acrylic acid and (meth)acrylate, styrene, such as styrene, vinyltoluene, and divinylbenzene, are mentioned. The monomers include acetyl-based monomers such as vinyl chloride and vinyl acetate, urethane-based monomers such as urethane acrylate, and conventionally known monomers such as the various polyols mentioned above. In addition, considering the dispersibility of zirconium nitride powder, it is preferable to set the viscosity of a monomer dispersion in the range of 10 Pa.s-1000 mPa.s (10 mPa.s-1000 mPa.s). For the dispersion into the monomer, the grinding method using a grinding medium can be used in the same manner as the dispersion into the solvent. In addition, although it is not an essential component, in order to further improve dispersibility, you may use a polymeric dispersing agent. The molecular weight of the polymer dispersant is effectively several thousands to tens of thousands. In addition, as the functional group adsorbed on the pigment, secondary amines, tertiary amines, carboxylic acids, phosphoric acid, phosphoric acid esters, etc. can be listed, especially tertiary amines, carboxylic acid Acid is effective. In place of the polymer dispersant, adding a small amount of a silane coupling agent is also effective for improving the dispersibility. On the other hand, after performing planetary stirring, a dispersion liquid can also be obtained by passing through three rolls several times. On the other hand, a black composition obtained by dispersing zirconium nitride powder as a black pigment in a dispersion medium and mixing a resin was prepared. As the said dispersion medium, propylene glycol monomethyl ether acetate (PGMEA), methyl ethyl ketone (MEK), butyl acetate (BA), etc. are mentioned. Moreover, as said resin, an acrylic resin, an epoxy resin, etc. are mentioned. For solvent-based dispersion, it is effective to add a polymer dispersant in the same manner as monomer dispersion, and similarly to monomer dispersion, it is effective to have a molecular weight of several thousands to tens of thousands, and as functional groups, tertiary amines and carboxylic acids are effective.

接着,对使用上述单体分散体来制作黑色膜的方法进行说明。首先,在单体分散体中加入光聚合引发剂后,将该单体分散体涂布在基板上而形成涂膜。接着,使该涂膜热固化或紫外线固化而制作黑色膜。作为上述基板,例如可列举出玻璃、硅树脂、聚碳酸酯、聚酯、芳族聚酰胺、聚酰胺酰亚胺、聚酰亚胺等。另外,对于上述基板,也可根据需要预先实施利用硅烷偶联剂等的化学品处理、等离子体处理、离子镀、溅射、气相反应法、真空蒸镀等适宜的前处理。在将单体分散体涂布在基板上时,可采用旋转涂布、流延涂布、辊涂等适宜的涂布法。Next, a method for producing a black film using the above-mentioned monomer dispersion will be described. First, after adding a photopolymerization initiator to the monomer dispersion, the monomer dispersion is applied on a substrate to form a coating film. Next, this coating film is thermally cured or UV-cured to prepare a black film. As said board|substrate, glass, a silicone resin, a polycarbonate, a polyester, an aramid, a polyamideimide, a polyimide etc. are mentioned, for example. In addition, appropriate pretreatments such as chemical treatment using a silane coupling agent, plasma treatment, ion plating, sputtering, gas-phase reaction method, and vacuum vapor deposition may be performed in advance on the above-mentioned substrate as necessary. When coating the monomer dispersion on the substrate, a suitable coating method such as spin coating, cast coating, and roll coating can be employed.

为了使上述涂膜热固化,优选在大气中在80℃~250℃的温度下保持5分钟~60分钟。在这里,将涂膜的热固化温度限定在80℃~250℃的范围内的原因在于,若低于80℃,则涂膜未充分固化,而若超过250℃,则基板会软化。另外,将涂膜的热固化时间限定在5分钟~60分钟的范围内的原因在于,若低于5分钟,则涂膜未充分固化,而若超过60分钟,则需要超出必要的时间从而不经济。另一方面,为了使上述涂膜紫外线固化,预先在单体分散体中添加Irgacure 184 (BASF公司制)、Irgacure 250 (BASF公司制)、Irgacure 270 (BASF公司制)、Irgacure 369 (BASF公司制)、Irgacure 500 (BASF公司制)、Irgacure 907 (BASF公司制)、ADEKA OPTOMER N-1919 (ADEKA公司制)等通过紫外线裂解的光聚合引发剂。然后,将添加有该光聚合引发剂的单体分散体涂布在基板上后,进行预烘焙而使溶剂蒸发,从而形成光致抗蚀剂膜。接着,在该光致抗蚀剂膜上经由光掩模曝光成规定的图案形状后,使用碱显影液进行显影,并溶解除去光致抗蚀剂膜的未曝光部,然后优选进行后烘焙,由此形成规定的黑色膜。In order to thermoset the said coating film, it is preferable to hold|maintain at the temperature of 80 degreeC - 250 degreeC in the atmosphere for 5 minutes - 60 minutes. Here, the reason why the thermosetting temperature of the coating film is limited to the range of 80°C to 250°C is that if the temperature is lower than 80°C, the coating film is not sufficiently cured, and if it exceeds 250°C, the substrate is softened. In addition, the reason why the thermal curing time of the coating film is limited to the range of 5 minutes to 60 minutes is that if it is less than 5 minutes, the coating film is not sufficiently cured, and if it exceeds 60 minutes, it will take longer than necessary to prevent the economy. On the other hand, Irgacure 184 (manufactured by BASF), Irgacure 250 (manufactured by BASF), Irgacure 270 (manufactured by BASF), and Irgacure 369 (manufactured by BASF) were previously added to the monomer dispersion in order to cure the above-mentioned coating film by ultraviolet rays. ), Irgacure 500 (manufactured by BASF), Irgacure 907 (manufactured by BASF), and ADEKA OPTOMER N-1919 (manufactured by ADEKA) are photopolymerization initiators that are cleaved by ultraviolet rays. Then, after applying the monomer dispersion to which the photopolymerization initiator is added on the substrate, prebaking is performed to evaporate the solvent, thereby forming a photoresist film. Next, after exposing the photoresist film to a predetermined pattern shape through a photomask, it is developed using an alkali developing solution to dissolve and remove the unexposed portion of the photoresist film, and then preferably post-baking is performed. Thereby, a predetermined black film is formed.

固化后的黑色膜的膜厚优选在0.1μm~100μm的范围内。特别适合于制作膜厚为10μm~100μm的厚的黑色膜。另外,黑色膜的OD(光密度,Optical Density)值是作为表示使用氮化锆粉末的黑色膜的遮光性(透射率的衰减)的指标的光学密度。具体而言,OD值是用对数表示光通过黑色膜时被吸收的程度的值,用以下式(1)定义。在式(1)中,I为透射光量,I0为入射光量。It is preferable that the film thickness of the black film after hardening exists in the range of 0.1 micrometer - 100 micrometers. It is especially suitable for the production of thick black films with a film thickness of 10 μm to 100 μm. In addition, the OD (Optical Density) value of a black film is an optical density as an index which shows the light-shielding property (decrease of transmittance) of the black film using a zirconium nitride powder. Specifically, the OD value is a logarithmic value representing the degree to which light is absorbed when passing through a black film, and is defined by the following formula (1). In Formula (1), I is the amount of transmitted light, and I 0 is the amount of incident light.

OD值=-log10(I/I0) …………(1)OD value=-log10(I/I 0 ) …………(1)

此外,为了确保高遮光性,上述黑色膜的OD值优选为2.0以上,且为了确保高绝缘性,黑色膜的体电阻率优选为1×1013Ω·cm以上。In addition, in order to ensure high light-shielding properties, the OD value of the black film is preferably 2.0 or more, and the volume resistivity of the black film is preferably 1×10 13 Ω·cm or more in order to ensure high insulating properties.

对使用上述黑色组合物来制作黑色膜的方法进行说明。首先,将黑色组合物涂布在基板上以形成涂膜。接着,使该涂膜热固化或紫外线固化而制作黑色膜。由于使用该黑色组合物的黑色膜的制作方法与使用上述单体分散体的黑色膜的制作方法大致相同,所以省略重复的说明。A method of producing a black film using the above-mentioned black composition will be described. First, the black composition is coated on a substrate to form a coating film. Next, this coating film is thermally cured or UV-cured to prepare a black film. Since the production method of the black film using this black composition is substantially the same as the production method of the black film using the above-mentioned monomer dispersion, the overlapping description is omitted.

实施例Example

接下来,将本发明的实施例与比较例一起详细地说明。Next, the Example of this invention is demonstrated in detail together with the comparative example.

<实施例1><Example 1>

首先,通过热剂法制作氮化锆粗粉末。具体而言,在7.4g的由通过BET法测定的比表面积计算的平均一次粒径为50nm的单斜晶系二氧化锆粉末中,添加7.3g的平均一次粒径为150μm的金属镁粉末和3.0g的平均一次粒径为200nm的氮化镁粉末,利用在石英制玻璃管中内装有石墨舟的反应装置均匀地混合。此时,金属镁的添加量为二氧化锆的5.0倍摩尔,氮化镁的添加量为二氧化锆的0.5倍摩尔。将该混合物在氮气气氛下在700℃的温度下焙烧60分钟而得到焙烧物。将该焙烧物分散在1升的水中,缓慢地添加10%盐酸,在pH为1以上、温度保持在100℃以下的同时进行清洗,然后用25%氨水调整至pH7~pH8,过滤。将该过滤固体成分在水中再分散成400g/升,再次与上述相同地进行酸清洗,用氨水进行pH调整后,过滤。这样将酸清洗-利用氨水的pH调整重复2次后,将过滤物以固体成分换算为500g/升地分散在离子交换水中,在60℃下加热搅拌并调整为pH7后,用抽滤装置过滤,进而用等量的离子交换水清洗,用设定温度:120℃的热风干燥机进行干燥,由此得到氮化锆粗粉末。First, zirconium nitride coarse powder is produced by the thermal agent method. Specifically, to 7.4 g of monoclinic zirconium dioxide powder having an average primary particle diameter of 50 nm calculated from the specific surface area measured by the BET method, 7.3 g of magnesium metal powder having an average primary particle diameter of 150 μm and 3.0 g of magnesium nitride powder having an average primary particle size of 200 nm was uniformly mixed in a reaction apparatus in which a graphite boat was installed in a glass tube made of quartz. At this time, the amount of metal magnesium added was 5.0 times the mole of zirconium dioxide, and the amount of magnesium nitride added was 0.5 times the mole of zirconium dioxide. The mixture was calcined at a temperature of 700° C. for 60 minutes under a nitrogen atmosphere to obtain a calcined product. The calcined product was dispersed in 1 liter of water, 10% hydrochloric acid was slowly added, the pH was 1 or more, and the temperature was kept at 100° C. or less while washing, and then adjusted to pH 7 to pH 8 with 25% ammonia water, and filtered. This filtered solid content was redispersed in water to 400 g/liter, acid washing was performed again in the same manner as above, and pH was adjusted with ammonia water, followed by filtration. After repeating the acid cleaning and pH adjustment with ammonia water twice in this way, the filtrate was dispersed in ion-exchanged water at a solid content of 500 g/liter, heated and stirred at 60°C to adjust to pH 7, and then filtered with a suction filter. , and further washed with an equal amount of ion-exchanged water, and dried with a hot-air dryer with a set temperature of 120° C. to obtain a coarse powder of zirconium nitride.

接着,将20g的上述氮化锆粗粉末分散在5升的异丙醇中,进行60分钟的低温湿式介质粉碎(介质:氧化铝),得到氮化锆前体粉末。此时的异丙醇(分散媒质)的温度为5℃以下。进而使上述氮化锆前体粉末干燥后,在N2气气氛中在350℃的温度下保持4小时来进行焙烧,得到氮化锆粉末。将该氮化锆粉末作为实施例1。Next, 20 g of the above-mentioned coarse zirconium nitride powder was dispersed in 5 liters of isopropanol, and subjected to low-temperature wet medium pulverization (medium: alumina) for 60 minutes to obtain a zirconium nitride precursor powder. The temperature of the isopropyl alcohol (dispersion medium) at this time is 5°C or lower. Furthermore, after drying the said zirconium nitride precursor powder, it calcined at the temperature of 350 degreeC in N2 gas atmosphere for 4 hours, and obtained the zirconium nitride powder. This zirconium nitride powder was taken as Example 1.

<实施例2~12和比较例1~10><Examples 2 to 12 and Comparative Examples 1 to 10>

关于实施例2~12和比较例1~10的氮化锆粉末,用表1所示的方法分别生成氮化锆粗粉末,分别粉碎,进而分别焙烧。需说明的是,除了表1所示的生成方法、粉碎方法和焙烧方法以外,与实施例1相同地制作氮化锆粉末。需说明的是,在表1的氮化锆粗粉末的生成方法的栏中,“TM”为热剂法,“PZ”为等离子体法。另外,在表1的氮化锆粗粉末的粉碎方法的栏中,“BM”为珠磨机法,“JM”为喷射磨机法。此外,在表1的氮化锆前体粉末的焙烧时间/气体的栏中,“N2”为氮气,“He”为氦气,“Ar”为氩气。Regarding the zirconium nitride powders of Examples 2 to 12 and Comparative Examples 1 to 10, coarse zirconium nitride powders were produced by the methods shown in Table 1, respectively, and pulverized, respectively, and further calcined. It should be noted that zirconium nitride powder was produced in the same manner as in Example 1, except for the production method, pulverization method, and calcination method shown in Table 1. In addition, in the column of the generation method of the zirconium nitride coarse powder of Table 1, "TM" is a thermal agent method, and "PZ" is a plasma method. In addition, in the column of the grinding method of the zirconium nitride coarse powder in Table 1, "BM" is a bead mill method, and "JM" is a jet mill method. In addition, in the column of calcination time/gas of the zirconium nitride precursor powder in Table 1, "N 2 " is nitrogen gas, "He" is helium gas, and "Ar" is argon gas.

<比较试验1><Comparative Test 1>

对于实施例1~12和比较例1~10的氮化锆粉末,分别测定在用5MPa的压力压实的压坯的状态下的体电阻率,和在用水稀释的状态下超声波分散5分钟时的粒度分布D90。将这些结果示出于表1中。For the zirconium nitride powders of Examples 1 to 12 and Comparative Examples 1 to 10, the volume resistivity in the state of the compact compacted with a pressure of 5 MPa and the ultrasonic dispersion for 5 minutes in the state of dilution with water were measured, respectively. The particle size distribution D 90 . These results are shown in Table 1.

<比较试验2><Comparative Test 2>

对于40g的实施例1~11和比较例1~9的氮化锆粉末,如表1所示,分散在200毫升的丙烯酸类单体或环氧单体中而制备单体分散体。另一方面,对于40g的实施例12和比较例10的氮化锆粉末,如表1所示,添加胺系分散剂,在200毫升的丙二醇单甲基醚乙酸酯(PGMEA)溶剂中进行分散处理而制备黑色颜料分散液后,在这些黑色颜料分散液中以按质量比计黑色颜料:树脂=3:7的比例添加并混合丙烯酸类树脂,从而制备黑色组合物。然后,在上述单体分散体或黑色组合物中添加4g的Irgacure 500 (光聚合引发剂:BASF公司制)。接着,将上述单体分散体或黑色组合物以使焙烧后的膜厚为表1所示的厚度的方式旋涂在玻璃基板上,然后进行预烘焙而使溶剂蒸发,从而形成光致抗蚀剂膜。进而在该光致抗蚀剂膜上经由光掩模曝光成规定的图案形状后,使用碱显影液进行显影,并溶解除去光致抗蚀剂膜的未曝光部,然后,进行后烘焙,由此分别形成黑色膜。对于这些黑色膜,基于前述式(1),使用Macbeth公司制的商品名D200的光密度计(densitometer)分别测定紫外线(中心波长为370nm)和可见光(中心波长为560nm)的OD值,并且也分别测定黑色膜的体电阻率(Ω·cm)。将这些结果示出于表1中。As shown in Table 1, 40 g of the zirconium nitride powders of Examples 1 to 11 and Comparative Examples 1 to 9 were dispersed in 200 ml of acrylic monomers or epoxy monomers to prepare monomer dispersions. On the other hand, to 40 g of the zirconium nitride powders of Example 12 and Comparative Example 10, as shown in Table 1, an amine-based dispersant was added, and the test was carried out in 200 ml of a propylene glycol monomethyl ether acetate (PGMEA) solvent. After the dispersion treatment to prepare black pigment dispersion liquids, acrylic resins were added and mixed to these black pigment dispersion liquids at a mass ratio of black pigment:resin=3:7 to prepare a black composition. Then, 4 g of Irgacure 500 (photopolymerization initiator: manufactured by BASF Corporation) was added to the above-mentioned monomer dispersion or black composition. Next, the above-mentioned monomer dispersion or black composition was spin-coated on a glass substrate so that the film thickness after firing was as shown in Table 1, and then pre-baked to evaporate the solvent to form a photoresist agent film. Further, after exposing the photoresist film to a predetermined pattern shape through a photomask, it is developed using an alkali developing solution to dissolve and remove the unexposed portion of the photoresist film, and then post-baking is performed to obtain a This respectively forms a black film. For these black films, based on the aforementioned formula (1), the OD values of ultraviolet rays (central wavelength: 370 nm) and visible light (central wavelength: 560 nm) were measured using a densitometer (densitometer) of the trade name D200 manufactured by Macbeth, respectively, and also The volume resistivity (Ω·cm) of the black films was measured, respectively. These results are shown in Table 1.

[表1][Table 1]

Figure DEST_PATH_IMAGE002
Figure DEST_PATH_IMAGE002

由表1可知,比较例1和10的氮化锆粉末,即虽然用热剂法制作氮化锆粗粉末,但未将该氮化锆粉碎,而在氮气气氛中进行在350℃的温度下保持4小时的焙烧而得到的氮化锆粉末,在用5MPa的压力压实的压坯的状态下的体电阻率分别为1×105Ω·cm,比适当的范围(1×107Ω·cm以上)小,在用水稀释的状态下超声波分散5分钟时的粒度分布D90分别为30μm,比适当的范围(10μm以下)大。另外,使比较例1的氮化锆粉末分散在丙烯酸类单体中而制作的黑色膜的OD值为1.0,比适当的范围(2.0以上)小,体电阻率为1×106Ω·cm,比适当的范围(1×1013以上)小,涂膜不均匀。此外,使比较例10的氮化锆粉末分散在丙二醇单甲基醚乙酸酯(PGMEA)中而制作的黑色膜的OD值为1.9,比适当的范围(2.0以上)小,体电阻率为6×1012Ω·cm,比适当的范围(1×1013以上)小。As can be seen from Table 1, the zirconium nitride powders of Comparative Examples 1 and 10, that is, the zirconium nitride coarse powders were produced by the thermal agent method, but the zirconium nitride was not pulverized, but was carried out at a temperature of 350°C in a nitrogen atmosphere. The volume resistivity of the zirconium nitride powder obtained by holding the calcination for 4 hours in a compacted state with a pressure of 5 MPa was 1×10 5 Ω·cm, respectively, which was lower than an appropriate range (1×10 7 Ω cm or more), and the particle size distribution D90 when ultrasonically dispersed for 5 minutes in the state of dilution with water was 30 μm, which was larger than an appropriate range (10 μm or less). In addition, the OD value of the black film prepared by dispersing the zirconium nitride powder of Comparative Example 1 in the acrylic monomer was 1.0, which was smaller than an appropriate range (2.0 or more), and the volume resistivity was 1×10 6 Ω·cm , smaller than the appropriate range (1×10 13 or more), and the coating film is uneven. In addition, the OD value of the black film prepared by dispersing the zirconium nitride powder of Comparative Example 10 in propylene glycol monomethyl ether acetate (PGMEA) was 1.9, which was smaller than an appropriate range (2.0 or more), and the volume resistivity was 1.9. 6×10 12 Ω·cm is smaller than an appropriate range (1×10 13 or more).

比较例3的氮化锆粉末,即虽然用热剂法制作氮化锆粗粉末,并将该氮化锆粗粉末用分散媒质温度为5℃以下的珠磨机法进行粉碎(低温湿式介质粉碎),但未对氮化锆前体粉末进行焙烧而得到的氮化锆粉末,虽然在用水稀释的状态下超声波分散5分钟时的粒度分布D90为9μm,在适当的范围(10μm以下)内,但在用5MPa的压力压实的压坯的状态下的体电阻率为1×106Ω·cm,比适当的范围(1×107Ω·cm以上)小。另外,虽然使比较例3的氮化锆粉末分散在丙烯酸类单体中而制作的黑色膜的OD值为2.1,在适当的范围(2.0以上)内,但体电阻率为5×1011Ω·cm,比适当的范围(1×1013以上)小。The zirconium nitride powder of Comparative Example 3 was prepared as a coarse zirconium nitride powder by the thermal agent method, and the coarse zirconium nitride powder was pulverized by a bead mill method with a dispersion medium temperature of 5°C or lower (low temperature wet medium pulverization). ), but the zirconium nitride powder obtained without calcining the zirconium nitride precursor powder has a particle size distribution D 90 of 9 μm when it is ultrasonically dispersed for 5 minutes in a state of dilution with water, which is within an appropriate range (10 μm or less) , but the volume resistivity in the state of the compact compacted with a pressure of 5 MPa is 1×10 6 Ω·cm, which is smaller than an appropriate range (1×10 7 Ω·cm or more). In addition, although the OD value of the black film prepared by dispersing the zirconium nitride powder of Comparative Example 3 in the acrylic monomer was 2.1, which was within an appropriate range (2.0 or more), the volume resistivity was 5×10 11 Ω cm, which is smaller than an appropriate range (1×10 13 or more).

与之相对的是,实施例1和12的氮化锆粉末,即用热剂法制作氮化锆粗粉末,并将该氮化锆用分散媒质温度为5℃以下的珠磨机法进行粉碎(低温湿式介质粉碎)后,在氮气气氛中进行在350℃的温度下保持4小时的焙烧而得到的氮化锆粉末,在用5MPa的压力压实的压坯的状态下的体电阻率分别为1×108Ω·cm,在适当的范围(1×107Ω·cm以上)内,在用水稀释的状态下超声波分散5分钟时的粒度分布D90分别为7μm,在适当的范围(10μm以下)内。另外,使实施例1的氮化锆粉末分散在丙烯酸类单体中而制作的黑色膜的OD值为2.1,在适当的范围(2.0以上)内,体电阻率为5×1013Ω·cm,在适当的范围(1×1013以上)。此外,使实施例12的氮化锆粉末分散在丙二醇单甲基醚乙酸酯(PGMEA)中而制作的黑色膜的OD值为2.1,在适当的范围(2.0以上)内,体电阻率为5×1013Ω·cm,在适当的范围(1×1013以上)内。On the other hand, for the zirconium nitride powders of Examples 1 and 12, the zirconium nitride coarse powder was prepared by the thermal agent method, and the zirconium nitride was pulverized by the bead mill method with a dispersion medium temperature of 5°C or lower. The zirconium nitride powder obtained by calcining at a temperature of 350° C. for 4 hours in a nitrogen atmosphere after the (low-temperature wet-medium pulverization), the volume resistivity of the zirconium nitride powder in the state of a compact compacted with a pressure of 5 MPa respectively is 1×10 8 Ω·cm, within the appropriate range (1×10 7 Ω·cm or more), and the particle size distribution D 90 of ultrasonic dispersion for 5 minutes in the state of dilution with water is 7 μm, respectively, within the appropriate range ( 10 μm or less). In addition, the OD value of the black film prepared by dispersing the zirconium nitride powder of Example 1 in an acrylic monomer was 2.1, and within an appropriate range (2.0 or more), the volume resistivity was 5×10 13 Ω·cm , in an appropriate range (above 1×10 13 ). In addition, the OD value of the black film prepared by dispersing the zirconium nitride powder of Example 12 in propylene glycol monomethyl ether acetate (PGMEA) was 2.1, and the volume resistivity was within an appropriate range (2.0 or more). 5×10 13 Ω·cm is within an appropriate range (1×10 13 or more).

实施例9的氮化锆粉末,即用热剂法制作氮化锆粗粉末,并将该氮化锆用分散媒质温度为5℃的珠磨机法进行粉碎(低温湿式介质粉碎)后,在氦气气氛中进行在350℃的温度下保持4小时的焙烧而得到的氮化锆粉末,在用5MPa的压力压实的压坯的状态下的体电阻率为8×107Ω·cm,在适当的范围(1×107Ω·cm以上)内,在用水稀释的状态下超声波分散5分钟时的粒度分布D90为7μm,在适当的范围(10μm以下)内。另外,使实施例9的氮化锆粉末分散在丙烯酸类单体中而制作的黑色膜的OD值为2.2,在适当的范围(2.0以上)内,体电阻率为3×1013Ω·cm,在适当的范围(1×1013以上)内。The zirconium nitride powder of Example 9 was prepared as a coarse zirconium nitride powder by a thermal agent method, and the zirconium nitride was pulverized by a bead mill method with a dispersion medium temperature of 5°C (low-temperature wet medium pulverization), and then the zirconium nitride was pulverized in a The zirconium nitride powder obtained by calcining at a temperature of 350° C. for 4 hours in a helium atmosphere has a volume resistivity of 8×10 7 Ω·cm in the state of a compact compacted with a pressure of 5 MPa, In an appropriate range (1×10 7 Ω·cm or more), the particle size distribution D 90 when ultrasonically dispersed for 5 minutes in a state of dilution with water is 7 μm, which is in an appropriate range (10 μm or less). In addition, the OD value of the black film prepared by dispersing the zirconium nitride powder of Example 9 in the acrylic monomer was 2.2, and the volume resistivity was 3×10 13 Ω·cm within an appropriate range (2.0 or more). , within an appropriate range (above 1×10 13 ).

实施例10的氮化锆粉末,即用热剂法制作氮化锆粗粉末,并将该氮化锆用分散媒质温度为5℃的珠磨机法进行粉碎(低温湿式介质粉碎)后,在氩气气氛中进行在350℃的温度下保持4小时的焙烧而得到的氮化锆粉末,在用5MPa的压力压实的压坯的状态下的体电阻率为8×107Ω·cm,在适当的范围(1×107Ω·cm以上)内,在用水稀释的状态下超声波分散5分钟时的粒度分布D90为9μm,在适当的范围(10μm以下)内。另外,使实施例10的氮化锆粉末分散在丙烯酸类单体中而制作的黑色膜的OD值为2.2,在适当的范围(2.0以上)内,体电阻率为3×1013Ω·cm,在适当的范围(1×1013以上)内。The zirconium nitride powder of Example 10 was prepared as a coarse powder of zirconium nitride by a thermal agent method, and the zirconium nitride was pulverized by a bead mill method with a dispersion medium temperature of 5°C (low-temperature wet medium pulverization), and then the The zirconium nitride powder obtained by calcining at a temperature of 350° C. for 4 hours in an argon atmosphere has a volume resistivity of 8×10 7 Ω·cm in the state of a compact compacted with a pressure of 5 MPa, In an appropriate range (1×10 7 Ω·cm or more), the particle size distribution D 90 when ultrasonically dispersed for 5 minutes in a state of dilution with water is 9 μm, which is in an appropriate range (10 μm or less). In addition, the OD value of the black film prepared by dispersing the zirconium nitride powder of Example 10 in an acrylic monomer was 2.2, and within an appropriate range (2.0 or more), the volume resistivity was 3×10 13 Ω·cm , within an appropriate range (above 1×10 13 ).

另一方面,比较例2的氮化锆粉末,即虽然用等离子体法制作氮化锆粗粉末,但未将该氮化锆粉碎,而在氮气气氛中进行在350℃的温度下保持4小时的焙烧而得到的氮化锆粉末,在用5MPa的压力压实的压坯的状态下的体电阻率为3×104Ω·cm,比适当的范围(1×107Ω·cm以上)小,在用水稀释的状态下超声波分散5分钟时的粒度分布D90为14μm,比适当的范围(10μm以下)大。另外,使比较例2的氮化锆粉末分散在环氧单体中而制作的黑色膜的OD值为1.2,比适当的范围(2.0以上)小,体电阻率为2×106Ω·cm,比适当的范围(1×1013以上)小。On the other hand, the zirconium nitride powder of Comparative Example 2, that is, the zirconium nitride coarse powder was produced by the plasma method, but the zirconium nitride was not pulverized, but kept at a temperature of 350° C. for 4 hours in a nitrogen atmosphere The volume resistivity of the zirconium nitride powder obtained by sintering with a pressure of 5 MPa is 3×10 4 Ω·cm, which is an appropriate range (1×10 7 Ω·cm or more) Small, the particle size distribution D90 when ultrasonically dispersed for 5 minutes in a state of dilution with water is 14 μm, which is larger than an appropriate range (10 μm or less). In addition, the OD value of the black film prepared by dispersing the zirconium nitride powder of Comparative Example 2 in an epoxy monomer was 1.2, which was smaller than an appropriate range (2.0 or more), and the volume resistivity was 2×10 6 Ω·cm , which is smaller than the appropriate range (1×10 13 or more).

比较例4的氮化锆粉末,即虽然用等离子体法制作氮化锆粗粉末,并将该氮化锆粗粉末用分散媒质温度为5℃以下的珠磨机法进行粉碎(低温湿式介质粉碎),但未对氮化锆前体粉末进行焙烧而得到的氮化锆粉末,虽然在用水稀释的状态下超声波分散5分钟时的粒度分布D90为5μm,在适当的范围(10μm以下)内,但在用5MPa的压力压实的压坯的状态下的体电阻率为2×104Ω·cm,比适当的范围(1×107Ω·cm以上)小。另外,虽然使比较例4的氮化锆粉末分散在环氧单体中而制作的黑色膜的OD值为2.0,在适当的范围(2.0以上)内,但体电阻率为2×1010Ω·cm,比适当的范围(1×1013以上)小。The zirconium nitride powder of Comparative Example 4 was prepared as a zirconium nitride coarse powder by a plasma method, and the zirconium nitride coarse powder was pulverized by a bead mill method with a dispersion medium temperature of 5°C or lower (low temperature wet medium pulverization). ), but the zirconium nitride powder obtained without calcining the zirconium nitride precursor powder has a particle size distribution D 90 of 5 μm when it is ultrasonically dispersed for 5 minutes in a state of dilution with water, which is within an appropriate range (10 μm or less) , but the volume resistivity in the state of the compact compacted with a pressure of 5 MPa is 2×10 4 Ω·cm, which is smaller than an appropriate range (1×10 7 Ω·cm or more). In addition, although the OD value of the black film prepared by dispersing the zirconium nitride powder of Comparative Example 4 in an epoxy monomer was 2.0, which was within an appropriate range (2.0 or more), the volume resistivity was 2×10 10 Ω cm, which is smaller than an appropriate range (1×10 13 or more).

与之相对的是,实施例2和4的氮化锆粉末,即用等离子体法制作氮化锆粗粉末,并将该氮化锆粗粉末用分散媒质温度为5℃以下的珠磨机法进行粉碎(低温湿式介质粉碎)后,在氮气气氛中进行在350℃的温度下保持4小时的焙烧而得到的氮化锆粉末,在用5MPa的压力压实的压坯的状态下的体电阻率分别为1×107Ω·cm,在适当的范围(1×107Ω·cm以上)内,在用水稀释的状态下超声波分散5分钟时的粒度分布D90分别为5μm,在适当的范围(10μm以下)内。另外,使实施例2的氮化锆粉末分散在环氧单体中而制作的黑色膜的OD值为2.2,在适当的范围(2.0以上)内,体电阻率为2×1013Ω·cm,在适当的范围(1×1013以上)内。此外,使实施例4的氮化锆粉末分散在丙烯酸类单体中而制作的黑色膜的OD值为2.3,在适当的范围(2.0以上)内,体电阻率为1×1013Ω·cm,在适当的范围(1×1013以上)内。On the other hand, for the zirconium nitride powders of Examples 2 and 4, the zirconium nitride coarse powder was produced by the plasma method, and the zirconium nitride coarse powder was prepared by the bead mill method with the dispersion medium temperature of 5°C or lower. Volume resistance of zirconium nitride powder obtained by calcining at a temperature of 350° C. for 4 hours in a nitrogen atmosphere after pulverization (low-temperature wet medium pulverization) in a compacted state with a pressure of 5 MPa The particle size distribution D 90 of ultrasonic dispersion for 5 minutes in the state of dilution with water is 5 μm, respectively, within the appropriate range (1× 10 7 Ω ·cm or more). range (less than 10 μm). In addition, the OD value of the black film prepared by dispersing the zirconium nitride powder of Example 2 in an epoxy monomer was 2.2, and the volume resistivity was 2×10 13 Ω·cm within an appropriate range (2.0 or more). , within an appropriate range (above 1×10 13 ). In addition, the OD value of the black film prepared by dispersing the zirconium nitride powder of Example 4 in an acrylic monomer was 2.3, and within an appropriate range (2.0 or more), the volume resistivity was 1×10 13 Ω·cm , within an appropriate range (above 1×10 13 ).

另一方面,比较例5的氮化锆粉末,即虽然用热剂法制作氮化锆粗粉末,但将该氮化锆粗粉末用比适当的分散媒质温度范围(10℃以下)高的分散媒质温度12℃的珠磨机法进行粉碎(低温湿式介质粉碎)后,在氮气气氛中进行在350℃的温度下保持4小时的焙烧而得到的氮化锆粉末,虽然在用水稀释的状态下超声波分散5分钟时的粒度分布D90为10μm,在适当的范围(10μm以下)内,但在用5MPa的压力压实的压坯的状态下的体电阻率为7×106Ω·cm,比适当的范围(1×107Ω·cm以上)小。另外,虽然使比较例5的氮化锆粉末分散在丙烯酸类单体中而制作的黑色膜的OD值为2.0,在适当的范围(2.0以上)内,但体电阻率为4×1012Ω·cm,比适当的范围(1×1013以上)小。On the other hand, the zirconium nitride powder of Comparative Example 5, that is, the zirconium nitride coarse powder was prepared by the thermal agent method, but the zirconium nitride coarse powder was dispersed in a temperature range higher than a suitable dispersion medium (10° C. or lower). Zirconium nitride powder obtained by pulverizing by the bead mill method at a medium temperature of 12°C (low-temperature wet medium pulverization), and then calcining at a temperature of 350°C for 4 hours in a nitrogen atmosphere, although diluted with water. The particle size distribution D 90 at the time of ultrasonic dispersion for 5 minutes is 10 μm, which is in an appropriate range (10 μm or less), but the volume resistivity in the state of the compacted compact with a pressure of 5 MPa is 7×10 6 Ω·cm, It is smaller than an appropriate range (1×10 7 Ω·cm or more). In addition, although the OD value of the black film prepared by dispersing the zirconium nitride powder of Comparative Example 5 in the acrylic monomer was 2.0, which was within an appropriate range (2.0 or more), the volume resistivity was 4×10 12 Ω cm, which is smaller than an appropriate range (1×10 13 or more).

与之相对的是,实施例5的氮化锆粉末,即用热剂法制作氮化锆粗粉末,并将该氮化锆粗粉末用在适当的分散媒质温度范围(10℃以下)内的分散媒质温度10℃的珠磨机法进行粉碎(低温湿式介质粉碎)后,在氮气气氛中进行在350℃的温度下保持4小时的焙烧而得到的氮化锆粉末,在用5MPa的压力压实的压坯的状态下的体电阻率为8×107Ω·cm,在适当的范围(1×107Ω·cm以上)内,在用水稀释的状态下超声波分散5分钟时的粒度分布D90为10μm,在适当的范围(10μm以下)内。另外,使实施例5的氮化锆粉末分散在丙烯酸类单体中而制作的黑色膜的OD值为2.0,在适当的范围(2.0以上)内,体电阻率为3×1013Ω·cm,在适当的范围(1×1013以上)内。On the other hand, the zirconium nitride powder of Example 5 was prepared by the thermal agent method as a zirconium nitride coarse powder, and the zirconium nitride coarse powder was used in a suitable dispersion medium temperature range (below 10°C). The zirconium nitride powder obtained by pulverizing with a bead mill method at a dispersion medium temperature of 10°C (low-temperature wet medium pulverization), and calcining at a temperature of 350°C for 4 hours in a nitrogen atmosphere, was pressed under a pressure of 5 MPa. The volume resistivity in the solid compact state is 8×10 7 Ω·cm, and the particle size distribution is within the appropriate range (1×10 7 Ω·cm or more) after ultrasonic dispersion for 5 minutes in the state of dilution with water D 90 is 10 μm, which is within an appropriate range (10 μm or less). In addition, the OD value of the black film prepared by dispersing the zirconium nitride powder of Example 5 in the acrylic monomer was 2.0, and the volume resistivity was 3×10 13 Ω·cm within an appropriate range (2.0 or more). , within an appropriate range (above 1×10 13 ).

另一方面,比较例6的氮化锆粉末,即虽然用热剂法制作氮化锆粗粉末,并将该氮化锆粗粉末用分散媒质温度为5℃的珠磨机法进行粉碎(低温湿式介质粉碎),但在氮气气氛中进行在焙烧温度为比适当的范围(250℃~550℃)低的200℃的温度下保持焙烧时间为在适当的范围(1小时~5小时)内的4小时的焙烧而得到的氮化锆粉末,虽然在用水稀释的状态下超声波分散5分钟时的粒度分布D90为8μm,在适当的范围(10μm以下)内,但在用5MPa的压力压实的压坯的状态下的体电阻率为1×106Ω·cm,比适当的范围(1×107Ω·cm以上)小。另外,虽然使比较例6的氮化锆粉末分散在丙烯酸类单体中而制作的黑色膜的OD值为2.0,在适当的范围(2.0以上)内,但体电阻率为1×1012Ω·cm,比适当的范围(1×1013以上)小。On the other hand, the zirconium nitride powder of Comparative Example 6 was prepared as a coarse zirconium nitride powder by the thermal agent method, and the zirconium nitride coarse powder was pulverized by a bead mill method with a dispersion medium temperature of 5°C (low temperature). Wet media pulverization), but in a nitrogen atmosphere, the calcination temperature is 200 ℃ lower than the appropriate range (250 ℃ ~ 550 ℃), and the calcination time is kept within the appropriate range (1 hour ~ 5 hours) The zirconium nitride powder obtained by calcination for 4 hours has a particle size distribution D 90 of 8 μm when ultrasonically dispersed for 5 minutes in a state of dilution with water, which is within an appropriate range (10 μm or less), but is compacted with a pressure of 5 MPa. The volume resistivity in the state of the green compact is 1×10 6 Ω·cm, which is smaller than an appropriate range (1×10 7 Ω·cm or more). In addition, although the OD value of the black film prepared by dispersing the zirconium nitride powder of Comparative Example 6 in the acrylic monomer was 2.0, which was within an appropriate range (2.0 or more), the volume resistivity was 1×10 12 Ω cm, which is smaller than an appropriate range (1×10 13 or more).

比较例7的氮化锆粉末,即虽然用热剂法制作氮化锆粗粉末,并将该氮化锆粗粉末用分散媒质温度为5℃的珠磨机法进行粉碎(低温湿式介质粉碎),但在氮气气氛中进行在焙烧温度为在适当的范围(250℃~550℃)内的350℃的温度下保持焙烧温度为比适当的范围(1小时~5小时)短的0.5小时的焙烧而得到的氮化锆粉末,虽然在用水稀释的状态下超声波分散5分钟时的粒度分布D90为7μm,在适当的范围(10μm以下)内,但在用5MPa的压力压实的压坯的状态下的体电阻率为3×106Ω·cm,比适当的范围(1×107Ω·cm以上)小。另外,虽然使比较例7的氮化锆粉末分散在丙烯酸类单体中而制作的黑色膜的OD值为2.0,在适当的范围(2.0以上)内,但体电阻率为2×1012Ω·cm,比适当的范围(1×1013以上)小。The zirconium nitride powder of Comparative Example 7 was prepared as a zirconium nitride coarse powder by the thermal agent method, and the zirconium nitride coarse powder was pulverized by a bead mill method with a dispersion medium temperature of 5°C (low temperature wet medium pulverization) , but in a nitrogen atmosphere, the calcination temperature is kept at a temperature of 350 ℃ within the appropriate range (250 ℃ ~ 550 ℃), and the calcination temperature is kept shorter than the appropriate range (1 hour ~ 5 hours) for 0.5 hours. The obtained zirconium nitride powder has a particle size distribution D 90 of 7 μm when ultrasonically dispersed for 5 minutes in a state of dilution with water, which is within an appropriate range (10 μm or less), but in the compacted compact with a pressure of 5 MPa. The volume resistivity in the state was 3×10 6 Ω·cm, which was smaller than an appropriate range (1×10 7 Ω·cm or more). In addition, although the OD value of the black film prepared by dispersing the zirconium nitride powder of Comparative Example 7 in the acrylic monomer was 2.0, which was within an appropriate range (2.0 or more), the volume resistivity was 2×10 12 Ω cm, which is smaller than an appropriate range (1×10 13 or more).

比较例8的氮化锆粉末,即虽然用热剂法制作氮化锆粗粉末,并将该氮化锆粗粉末用分散媒质温度为5℃的珠磨机法进行粉碎(低温湿式介质粉碎),但在氮气气氛中进行在焙烧温度为比适当的范围(250℃~550℃)高的600℃的温度下保持焙烧时间为在适当的范围(1小时~5小时)内的1小时的焙烧而得到的氮化锆粉末,在用5MPa的压力压实的压坯的状态下的体电阻率为4×106Ω·cm,比适当的范围(1×107Ω·cm以上)小,在用水稀释的状态下超声波分散5分钟时的粒度分布D90为14μm,比适当的范围(10μm以下)大。另外,使比较例8的氮化锆粉末分散在丙烯酸类单体中而制作的黑色膜的OD值为1.2,比适当的范围(2.0以上)小,体电阻率为1×109Ω·cm,比适当的范围(1×1013以上)小。The zirconium nitride powder of Comparative Example 8 was prepared as a zirconium nitride coarse powder by a thermal agent method, and the zirconium nitride coarse powder was pulverized by a bead mill method with a dispersion medium temperature of 5°C (low temperature wet medium pulverization) However, in a nitrogen atmosphere, the calcination temperature is 600 ℃ higher than the appropriate range (250 ℃ ~ 550 ℃), and the calcination time is kept within the appropriate range (1 hour ~ 5 hours) for 1 hour. The obtained zirconium nitride powder had a volume resistivity of 4×10 6 Ω·cm in the state of a compact compacted with a pressure of 5 MPa, which was smaller than an appropriate range (1×10 7 Ω·cm or more), The particle size distribution D 90 at the time of ultrasonic dispersion for 5 minutes in the state of dilution with water was 14 μm, which was larger than an appropriate range (10 μm or less). In addition, the OD value of the black film prepared by dispersing the zirconium nitride powder of Comparative Example 8 in the acrylic monomer was 1.2, which was smaller than the appropriate range (2.0 or more), and the volume resistivity was 1×10 9 Ω·cm , which is smaller than the appropriate range (1×10 13 or more).

与之相对的是,实施例6的氮化锆粉末,即用热剂法制作氮化锆粗粉末,并将该氮化锆粗粉末用分散媒质温度为5℃的珠磨机法进行粉碎(低温湿式介质粉碎)后,在氮气气氛中进行在焙烧温度为在适当的范围(250℃~550℃)内的250℃的温度下保持焙烧时间为在适当的范围(1小时~5小时)内的4小时的焙烧而得到的氮化锆粉末,在用5MPa的压力压实的压坯的状态下的体电阻率为3×107Ω·cm,在适当的范围(1×107Ω·cm以上)内,在用水稀释的状态下超声波分散5分钟时的粒度分布D90为8μm,在适当的范围(10μm以下)内。另外,使实施例6的氮化锆粉末分散在丙烯酸类单体中而制作的黑色膜的OD值为2.0,在适当的范围(2.0以上)内,体电阻率为2×1013Ω·cm,在适当的范围(1×1013以上)内。On the other hand, the zirconium nitride powder of Example 6 was prepared as a coarse powder of zirconium nitride by a thermal agent method, and the coarse powder of zirconium nitride was pulverized by a bead mill method with a dispersion medium temperature of 5°C ( After low temperature wet medium pulverization), it is carried out in a nitrogen atmosphere at a calcination temperature of 250 ℃ within the appropriate range (250 ℃ ~ 550 ℃), and the calcination time is kept within the appropriate range (1 hour ~ 5 hours) The zirconium nitride powder obtained by firing for 4 hours has a volume resistivity of 3×10 7 Ω·cm in the state of a compact compacted with a pressure of 5 MPa, which is in an appropriate range (1×10 7 Ω·cm). cm or more), the particle size distribution D 90 at the time of ultrasonic dispersion for 5 minutes in the state of dilution with water is 8 μm, which is within an appropriate range (10 μm or less). In addition, the OD value of the black film prepared by dispersing the zirconium nitride powder of Example 6 in an acrylic monomer was 2.0, and within an appropriate range (2.0 or more), the volume resistivity was 2×10 13 Ω·cm , within an appropriate range (above 1×10 13 ).

实施例7的氮化锆粉末,即用热剂法制作氮化锆粗粉末,并将该氮化锆粗粉末用分散媒质温度为5℃的珠磨机法进行粉碎(低温湿式介质粉碎)后,在氮气气氛中进行在焙烧温度为在适当的范围(250℃~550℃)内的350℃的温度下保持焙烧时间为在适当的范围(1小时~5小时)内的1小时的焙烧而得到的氮化锆粉末,在用5MPa的压力压实的压坯的状态下的体电阻率为1×107Ω·cm,在适当的范围(1×107Ω·cm以上)内,在用水稀释的状态下超声波分散5分钟时的粒度分布D90为7μm,在适当的范围(10μm以下)内。另外,使实施例7的氮化锆粉末分散在丙烯酸类单体中而制作的黑色膜的OD值为2.0,在适当的范围(2.0以上)内,体电阻率为1×1013Ω·cm,在适当的范围(1×1013以上)内。The zirconium nitride powder of Example 7 was prepared as a coarse zirconium nitride powder by a thermal agent method, and the coarse zirconium nitride powder was pulverized by a bead mill method with a dispersion medium temperature of 5°C (low-temperature wet medium pulverization). , in a nitrogen atmosphere, the calcination temperature is 350 ℃ within the appropriate range (250 ℃ ~ 550 ℃), and the calcination time is kept within the appropriate range (1 hour ~ 5 hours) for 1 hour. The obtained zirconium nitride powder has a volume resistivity of 1×10 7 Ω·cm in the state of a compact compacted with a pressure of 5 MPa, which is within an appropriate range (1×10 7 Ω·cm or more), The particle size distribution D 90 at the time of ultrasonic dispersion for 5 minutes in the state of dilution with water is 7 μm, which is within an appropriate range (10 μm or less). In addition, the OD value of the black film prepared by dispersing the zirconium nitride powder of Example 7 in an acrylic monomer was 2.0, and within an appropriate range (2.0 or more), the volume resistivity was 1×10 13 Ω·cm , within an appropriate range (above 1×10 13 ).

实施例8的氮化锆粉末,即用热剂法制作氮化锆粗粉末,并将该氮化锆粗粉末用分散媒质温度为5℃的珠磨机法进行粉碎(低温湿式介质粉碎)后,在氮气气氛中进行在焙烧温度为在适当的范围(250℃~550℃)内的550℃的温度下保持焙烧时间为在适当的范围(1小时~5小时)内的1小时的焙烧而得到的氮化锆粉末,在用5MPa的压力压实的压坯的状态下的体电阻率为1×108Ω·cm,在适当的范围(1×107Ω·cm以上)内,在用水稀释的状态下超声波分散5分钟时的粒度分布D90为8μm,在适当的范围(10μm以下)内。另外,使实施例8的氮化锆粉末分散在丙烯酸类单体中而制作的黑色膜的OD值为2.4,在适当的范围(2.0以上)内,体电阻率为1×1014Ω·cm,在适当的范围(1×1013以上)内。The zirconium nitride powder of Example 8 was prepared as a coarse zirconium nitride powder by a thermal agent method, and the coarse zirconium nitride powder was pulverized by a bead mill method with a dispersion medium temperature of 5°C (low-temperature wet medium pulverization). , in a nitrogen atmosphere, the calcination temperature is 550 ℃ in the appropriate range (250 ℃ ~ 550 ℃), and the calcination time is kept in the appropriate range (1 hour ~ 5 hours) for 1 hour. The obtained zirconium nitride powder has a volume resistivity of 1×10 8 Ω·cm in the state of a compact compacted with a pressure of 5 MPa, which is within an appropriate range (1×10 7 Ω·cm or more), and is in the range of 1×10 8 Ω·cm. The particle size distribution D 90 of 5 minutes of ultrasonic dispersion in the state of dilution with water is 8 μm, which is within an appropriate range (10 μm or less). In addition, the OD value of the black film prepared by dispersing the zirconium nitride powder of Example 8 in an acrylic monomer was 2.4, and within an appropriate range (2.0 or more), the volume resistivity was 1×10 14 Ω·cm , within an appropriate range (above 1×10 13 ).

另一方面,比较例9的氮化锆粉末,即虽然用热剂法制作氮化锆粗粉末,但将该氮化锆粗粉末在粉碎压力为比适当的范围(0.3MPa以上)内小的0.2MPa的粉碎压力下进行喷射磨机粉碎后,在氮气气氛中进行在350℃的温度下保持4小时的焙烧而得到的氮化锆粉末,在用5MPa的压力压实的压坯的状态下的体电阻率为2×106Ω·cm,比适当的范围(1×107Ω·cm以上)小,在用水稀释的状态下超声波分散5分钟时的粒度分布D90为14μm,比适当的范围(10μm以下)大。另外,使比较例9的氮化锆粉末分散在环氧单体中而制作的黑色膜的OD值为1.3,比适当的范围(2.0以上)小,体电阻率为1×1011Ω·cm,比适当的范围(1×1013以上)小。On the other hand, the zirconium nitride powder of Comparative Example 9, that is, the zirconium nitride coarse powder was produced by the thermal agent method, but the pulverization pressure of the zirconium nitride coarse powder was smaller than an appropriate range (0.3 MPa or more) Zirconium nitride powder obtained by jet mill pulverization at a pulverization pressure of 0.2 MPa, calcined at a temperature of 350° C. for 4 hours in a nitrogen atmosphere, in a compacted state with a pressure of 5 MPa The volume resistivity is 2×10 6 Ω·cm, which is smaller than the appropriate range (1×10 7 Ω·cm or more), and the particle size distribution D 90 when ultrasonically dispersed for 5 minutes in the state of dilution with water is 14 μm, which is an appropriate The range (below 10 μm) is large. In addition, the OD value of the black film prepared by dispersing the zirconium nitride powder of Comparative Example 9 in an epoxy monomer was 1.3, which was smaller than an appropriate range (2.0 or more), and the volume resistivity was 1×10 11 Ω·cm , which is smaller than the appropriate range (1×10 13 or more).

与之相对的是,实施例3的氮化锆粉末,即用热剂法制作氮化锆粗粉末,并将该氮化锆粗粉末在粉碎压力为在适当的范围(0.3MPa以上)内的0.5MPa的粉碎压力下进行喷射磨机粉碎后,在氮气气氛中进行在350℃的温度下保持4小时的焙烧而得到的氮化锆粉末,在用5MPa的压力压实的压坯的状态下的体电阻率为2×108Ω·cm,在适当的范围(1×107Ω·cm以上)内,在用水稀释的状态下超声波分散5分钟时的粒度分布D90为6μm,在适当的范围(10μm以下)内。另外,使实施例3的氮化锆粉末分散在环氧单体中而制作的黑色膜的OD值为2.2,在适当的范围(2.0以上)内,体电阻率为2×1014Ω·cm,在适当的范围(1×1013以上)内。On the other hand, the zirconium nitride powder of Example 3 was prepared by the thermal agent method as a zirconium nitride coarse powder, and the zirconium nitride coarse powder was pulverized in a suitable range (0.3MPa or more) with a pulverization pressure. Zirconium nitride powder obtained by jet mill pulverization at a pulverization pressure of 0.5 MPa, calcined at a temperature of 350° C. for 4 hours in a nitrogen atmosphere, in a compacted state with a pressure of 5 MPa The volume resistivity is 2×10 8 Ω·cm, and within an appropriate range (1×10 7 Ω·cm or more), the particle size distribution D 90 when ultrasonically dispersed for 5 minutes in the state of dilution with water is 6 μm. range (below 10 μm). In addition, the OD value of the black film prepared by dispersing the zirconium nitride powder of Example 3 in an epoxy monomer was 2.2, and within an appropriate range (2.0 or more), the volume resistivity was 2×10 14 Ω·cm , within an appropriate range (above 1×10 13 ).

实施例11的氮化锆粉末,即用热剂法制作氮化锆粗粉末,并将该氮化锆粗粉末在粉碎压力为在适当的范围(0.3MPa以上)内的0.3MPa的粉碎压力下进行喷射磨机粉碎后,在氮气气氛中进行在350℃的温度下保持4小时的焙烧而得到的实施例3的氮化锆粉末,在用5MPa的压力压实的压坯的状态下的体电阻率为2×107Ω·cm,在适当的范围(1×107Ω·cm以上)内,在用水稀释的状态下超声波分散5分钟时的粒度分布D90为10μm,在适当的范围(10μm以下)内。另外,使实施例11的氮化锆粉末分散在环氧单体中而制作的黑色膜的OD值为2.4,在适当的范围(2.0以上)内,体电阻率为1×1013Ω·cm,在适当的范围(1×1013以上)内。The zirconium nitride powder of Example 11 was prepared as a coarse zirconium nitride powder by a thermal agent method, and the zirconium nitride coarse powder was pulverized under a pulverization pressure of 0.3 MPa within an appropriate range (0.3 MPa or more). The zirconium nitride powder of Example 3 obtained by calcining at a temperature of 350° C. for 4 hours in a nitrogen atmosphere after being pulverized by a jet mill, in the state of a compact compacted with a pressure of 5 MPa The resistivity is 2×10 7 Ω·cm, within the appropriate range (1×10 7 Ω·cm or more), and the particle size distribution D 90 when ultrasonically dispersed for 5 minutes in the state of dilution with water is 10 μm, which is within the appropriate range (10 μm or less). In addition, the OD value of the black film prepared by dispersing the zirconium nitride powder of Example 11 in an epoxy monomer was 2.4, and within an appropriate range (2.0 or more), the volume resistivity was 1×10 13 Ω·cm , within an appropriate range (above 1×10 13 ).

产业上的可利用性Industrial Availability

本发明的氮化锆粉末可用作用于得到具有高绝缘性、高黑色度和高绝缘性的黑色膜的黑色颜料。The zirconium nitride powder of the present invention can be used as a black pigment for obtaining a black film having high insulating properties, high blackness, and high insulating properties.

Claims (6)

1. Zirconium nitride powder having a volume resistivity of 10 in the state of a green compact compacted with a pressure of 5MPa7A particle size distribution D of not less than Ω · cm and obtained by ultrasonic dispersion for 5 minutes in a state diluted with water or an alcohol having 2 to 5 carbon atoms90Is 10 μm or less.
2. A method of preparing zirconium nitride powder, the method comprising:
a step of forming a zirconium nitride coarse powder by a thermite method or a plasma synthesis method;
a step of producing a zirconium nitride precursor powder having a particle size distribution D obtained by subjecting the zirconium nitride precursor powder to low-temperature wet medium pulverization at a dispersion medium temperature of 10 ℃ or lower or to jet mill pulverization at an air pressure of 0.3MPa or higher, the zirconium nitride precursor powder having a particle size distribution D obtained by ultrasonic dispersion for 5 minutes in a state diluted with water or an alcohol having 2 to 5 carbon atoms90Is less than 10 μm; and
a step of preparing a zirconium nitride powder having a volume resistivity of 10 in a state of a green compact compacted with a pressure of 5MPa by calcining the pulverized zirconium nitride precursor powder in an inert gas atmosphere7Omega cm or more.
3. A monomer dispersion obtained by dispersing the zirconium nitride powder according to claim 1 in an acrylic monomer or an epoxy monomer.
4. A black composition obtained by dispersing the zirconium nitride powder according to claim 1 as a black pigment in a dispersion medium and mixing a resin.
5. The manufacturing method of the black film comprises the following steps:
a step of forming a coating film by applying the monomer dispersion according to claim 3 onto a substrate, and
and a step of producing a black film by thermally curing or ultraviolet-curing the coating film.
6. The manufacturing method of the black film comprises the following steps:
a step of forming a coating film by applying the black composition according to claim 4 onto a substrate, and
and a step of producing a black film by thermally curing or ultraviolet-curing the coating film.
CN202011277829.8A 2020-11-16 2020-11-16 Zirconium nitride powder and preparation method thereof Active CN114507073B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011277829.8A CN114507073B (en) 2020-11-16 2020-11-16 Zirconium nitride powder and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202011277829.8A CN114507073B (en) 2020-11-16 2020-11-16 Zirconium nitride powder and preparation method thereof

Publications (2)

Publication Number Publication Date
CN114507073A true CN114507073A (en) 2022-05-17
CN114507073B CN114507073B (en) 2025-06-06

Family

ID=81546324

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011277829.8A Active CN114507073B (en) 2020-11-16 2020-11-16 Zirconium nitride powder and preparation method thereof

Country Status (1)

Country Link
CN (1) CN114507073B (en)

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2073642A1 (en) * 1991-07-11 1993-01-12 Jiinjen Albert Sue Substoichiometric zirconium nitride coating
JP2003298199A (en) * 2002-04-04 2003-10-17 Toshiba Corp Silicon nitride wiring board and its producing method
JP2007110140A (en) * 2006-11-06 2007-04-26 Toshiba Corp Silicon nitride wiring board and method of manufacturing the same
WO2008043373A1 (en) * 2006-10-09 2008-04-17 Advanced Glass Ceramics Establishment Heat insulating composite and methods of manufacturing thereof
JP2009091205A (en) * 2007-10-10 2009-04-30 Tayca Corp Fine particle low-order zirconium oxide / zirconium nitride composite and method for producing the same
US20090325442A1 (en) * 2006-09-14 2009-12-31 Reinhard Simon Process for producing an in particular porous shaped ceramic body and shaped body produced thereby
JP2017222559A (en) * 2016-09-29 2017-12-21 三菱マテリアル電子化成株式会社 Zirconium nitride powder and manufacturing method therefor
JP2018083730A (en) * 2016-11-22 2018-05-31 三菱マテリアル電子化成株式会社 Mixed powder for forming black film and manufacturing method therefor
CN108424148A (en) * 2018-02-12 2018-08-21 吉林长玉特陶新材料技术股份有限公司 A kind of method that Rapid Nitriding produces zirconium cyanonitride, nitrogenizes zirconium powder
WO2018225318A1 (en) * 2017-06-09 2018-12-13 三菱マテリアル電子化成株式会社 Zirconium nitride powder and production method therefor
JP2019026502A (en) * 2017-07-28 2019-02-21 三菱マテリアル電子化成株式会社 Method of producing mixed powder for black film formation
JP2019104651A (en) * 2017-12-13 2019-06-27 テイカ株式会社 Zirconium nitride-based black filler and method of producing the same, coating composition containing the filler, and coating film thereof
WO2019130772A1 (en) * 2017-12-26 2019-07-04 三菱マテリアル電子化成株式会社 Powder for forming black light-shielding film and method for manufacturing same
JP2020019692A (en) * 2018-08-03 2020-02-06 三菱マテリアル電子化成株式会社 Zirconium nitride film and method of manufacturing the same

Patent Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2073642A1 (en) * 1991-07-11 1993-01-12 Jiinjen Albert Sue Substoichiometric zirconium nitride coating
JP2003298199A (en) * 2002-04-04 2003-10-17 Toshiba Corp Silicon nitride wiring board and its producing method
US20090325442A1 (en) * 2006-09-14 2009-12-31 Reinhard Simon Process for producing an in particular porous shaped ceramic body and shaped body produced thereby
WO2008043373A1 (en) * 2006-10-09 2008-04-17 Advanced Glass Ceramics Establishment Heat insulating composite and methods of manufacturing thereof
JP2007110140A (en) * 2006-11-06 2007-04-26 Toshiba Corp Silicon nitride wiring board and method of manufacturing the same
JP2009091205A (en) * 2007-10-10 2009-04-30 Tayca Corp Fine particle low-order zirconium oxide / zirconium nitride composite and method for producing the same
JP2017222559A (en) * 2016-09-29 2017-12-21 三菱マテリアル電子化成株式会社 Zirconium nitride powder and manufacturing method therefor
CN109923062A (en) * 2016-09-29 2019-06-21 三菱综合材料电子化成株式会社 Zirconium nitride powder and its manufacturing method
JP2018083730A (en) * 2016-11-22 2018-05-31 三菱マテリアル電子化成株式会社 Mixed powder for forming black film and manufacturing method therefor
CN110891898A (en) * 2017-06-09 2020-03-17 三菱综合材料电子化成株式会社 Zirconium nitride powder and method for producing same
WO2018225318A1 (en) * 2017-06-09 2018-12-13 三菱マテリアル電子化成株式会社 Zirconium nitride powder and production method therefor
JP2019026502A (en) * 2017-07-28 2019-02-21 三菱マテリアル電子化成株式会社 Method of producing mixed powder for black film formation
JP2019104651A (en) * 2017-12-13 2019-06-27 テイカ株式会社 Zirconium nitride-based black filler and method of producing the same, coating composition containing the filler, and coating film thereof
WO2019130772A1 (en) * 2017-12-26 2019-07-04 三菱マテリアル電子化成株式会社 Powder for forming black light-shielding film and method for manufacturing same
CN108424148A (en) * 2018-02-12 2018-08-21 吉林长玉特陶新材料技术股份有限公司 A kind of method that Rapid Nitriding produces zirconium cyanonitride, nitrogenizes zirconium powder
JP2020019692A (en) * 2018-08-03 2020-02-06 三菱マテリアル電子化成株式会社 Zirconium nitride film and method of manufacturing the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ZHAO SHIJIAO等: "synthesis and characteristic of zirconium nitride nanopowders by internal gelation and carbothermic nitridation", SCIENTIFIC REPORTS, vol. 09, 1 January 2019 (2019-01-01) *

Also Published As

Publication number Publication date
CN114507073B (en) 2025-06-06

Similar Documents

Publication Publication Date Title
JP5152444B2 (en) Method for producing porous silica particles, resin composition for antireflection film, article having antireflection film, and antireflection film
JP7091516B2 (en) Composite particles with coating aggregates with low-structured carbon black cores, coatings and inks with high resistivity and optical density, equipment made using these, and methods for making them.
TWI439419B (en) Aggregate of spherical core shell type cerium oxide/polymeric hybrid nano particles and manufacturing method thereof
TW200819394A (en) Conductive tin oxide soland process for producing the same
US7157024B2 (en) Metal oxide particle and process for producing same
JP5241199B2 (en) Method for producing fibrous hollow silica fine particles and substrate with antireflection coating
JP7339080B2 (en) Zirconium nitride powder and method for producing the same
CN114507073A (en) Zirconium nitride powder and preparation method thereof
US11697156B2 (en) Zirconium nitride powder and method for producing same
CN109739068A (en) Carbon black dispersion, Photosensitve resin composition, colored filter, display device
TWI840626B (en) Zirconium nitride powder and method for producing the same
KR20130100271A (en) Dispersion in hydrophobic organic solvent of surface-modified colloidal particles of anhydrous zinc antimonate, coating composition containing same, and coated member
EP4015582B1 (en) Zirconium nitride powder and method for producing same
HK40073023A (en) Zirconium nitride powder and preparation method thereof
KR20220056680A (en) Zirconium nitride powder and production method therefor
CN112074582A (en) Surface treatment infrared absorbing particle dispersion and infrared absorbing transparent substrate
JP4839602B2 (en) Method for producing a coating composition
JPH06264009A (en) Conductive coating composition and production of conductive coating film
JP6079023B2 (en) Active energy ray-curable composition and method for producing film
JPH03227376A (en) Production of inorganic electrically conductive coating material
JPS6227472A (en) Electrically conductive paint

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
REG Reference to a national code

Ref country code: HK

Ref legal event code: DE

Ref document number: 40073023

Country of ref document: HK

SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant