CN114006594B - Bulk acoustic wave resonator and preparation method thereof - Google Patents
Bulk acoustic wave resonator and preparation method thereof Download PDFInfo
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- CN114006594B CN114006594B CN202111290290.4A CN202111290290A CN114006594B CN 114006594 B CN114006594 B CN 114006594B CN 202111290290 A CN202111290290 A CN 202111290290A CN 114006594 B CN114006594 B CN 114006594B
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- 238000002360 preparation method Methods 0.000 title description 7
- 239000000463 material Substances 0.000 claims description 50
- 230000002093 peripheral effect Effects 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 38
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- 238000002955 isolation Methods 0.000 claims description 16
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- 238000005530 etching Methods 0.000 claims description 14
- 239000012530 fluid Substances 0.000 claims description 14
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 9
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- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 2
- 239000010408 film Substances 0.000 description 28
- 238000000034 method Methods 0.000 description 23
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 14
- 238000010586 diagram Methods 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 7
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- XSBJUSIOTXTIPN-UHFFFAOYSA-N aluminum platinum Chemical compound [Al].[Pt] XSBJUSIOTXTIPN-UHFFFAOYSA-N 0.000 description 2
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- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Disclosed herein is a bulk acoustic wave resonator and a method of manufacturing the same, the bulk acoustic wave resonator including: a top electrode, a piezoelectric material film, a bottom electrode and a substrate; wherein, the area of the outline of the periphery of the top electrode is provided with more than one first through hole, and the piezoelectric material film is provided with more than one second through hole; more than one third through holes are formed in the area defined by the peripheral outline of the bottom electrode; wherein the first, second and third vias are for etching a corrosive fluid of the cavity through the substrate. According to the embodiment of the invention, under the condition that a sacrificial layer process, a substrate back photoetching process and a Bragg reflecting layer are not required to be applied, the preparation process of the bulk acoustic wave resonator is simplified by etching the corrosive fluid of the cavity on the substrate through the arranged first through hole, the second through hole and the third through hole.
Description
Technical Field
The present disclosure relates to, but not limited to, radio frequency communication technology, and more particularly, to a bulk acoustic wave resonator and a method for manufacturing the same.
Background
Microelectromechanical Systems (MEMS) resonators are widely used in the field of radio frequency communications and play an extremely important role in the fabrication of micro filters, diplexers, multiplexers, and the like. The surface acoustic wave resonator in the related art has mature process, can adjust the resonant frequency through the change of a photoetching pattern, but is difficult to have higher electromechanical coupling coefficient and quality factor above 2.5 gigahertz (GHz) due to the restriction of photoetching process conditions and the limitation of sound velocity in piezoelectric materials, and the manufacturing process is difficult to be compatible with the processing process of complementary metal oxide semiconductors, so that the method does not accord with the development trend of miniaturization and integration of electronic products. The bulk acoustic wave resonator in the related art can be applied to the field of ultrahigh frequency, but the process is relatively complex, the thickness of the piezoelectric film is smaller when the resonance frequency is higher, and the quality is difficult to guarantee. Lamb (Lamb) wave resonators can have higher electromechanical coupling coefficients at ultrahigh frequencies, but have more severe requirements on lithography equipment and process conditions, and the intensity and number of parasitic modes are also greater than those of bulk acoustic wave resonators.
Aluminum nitride is a piezoelectric material widely used in MEMS resonators in recent years, and has the advantages of stable chemical properties, good process repeatability, high thermal stability of material parameters and the like. The main problems of manufacturing a filter with the center frequency of more than 3GHz by using an aluminum nitride-based resonator are complex process, narrow process window, low electromechanical coupling coefficient, poor quality of aluminum nitride and difficulty in meeting the requirement of mass production. Therefore, there is a need for a resonator of a novel structure that can meet the electrical requirements of an ultra-high frequency filter.
Disclosure of Invention
The following is a summary of the subject matter described in detail herein. This summary is not intended to limit the scope of the claims.
The embodiment of the invention provides a bulk acoustic wave resonator and a preparation method thereof, which can reduce the requirements of the bulk acoustic wave resonator on a photolithography process and simplify the preparation process of the bulk acoustic wave resonator.
The embodiment of the invention provides a bulk acoustic wave resonator, which comprises: a top electrode 1, a piezoelectric material film 2, a bottom electrode 3 and a substrate 4; wherein,
The area of the outline of the periphery of the top electrode (1) is provided with more than one first through hole (1-1), and the piezoelectric material film (2) is provided with more than one second through hole (2-1); more than one third through holes (3-1) are formed in the area defined by the peripheral outline of the bottom electrode (3);
Wherein the first through hole (1-1), the second through hole (2-1) and the third through hole (3-1) are for etching a corrosive fluid of a cavity on a substrate (4); the overlapping area of the first projection area of the second through hole (2-1) on the area outlined by the peripheral outline of the top electrode (1) and the first through hole (1-1) is a first hollowed-out area; and the overlapping area of the second projection area of the second through hole (2-1) on the area outlined by the peripheral outline of the bottom electrode (3) and the third through hole (3-1) is a second hollowed-out area.
The embodiment of the invention also provides a preparation method of the bulk acoustic wave resonator, which comprises the following steps:
Depositing a bottom electrode material and a bottom electrode lead-out electrode material on the upper surface of the substrate, and performing patterning treatment to obtain a bottom electrode lead-out electrode and a bottom electrode comprising a third through hole;
Preparing a piezoelectric material film on the upper surface of the bottom electrode material;
etching the piezoelectric material film to obtain a second through hole;
depositing a top electrode material and a top electrode lead-out electrode material on the upper surface of the piezoelectric material film, and performing patterning treatment to obtain a top electrode lead-out electrode and a top electrode comprising a first through hole;
the corrosive fluid flows to the substrate etching cavity through the first through hole, the second through hole and the third through hole to release the bulk acoustic wave resonator;
The overlapping area of the first projection area of the second through hole on the area outlined by the peripheral outline of the top electrode and the first through hole is a first hollowed-out area; and the overlapping area of the second projection area of the second through hole on the area outlined by the peripheral outline of the bottom electrode and the third through hole is a second hollowed-out area.
The technical scheme of the application comprises the following steps: a top electrode 1, a piezoelectric material film 2, a bottom electrode 3 and a substrate 4; wherein, the area outlined by the peripheral outline of the top electrode 1 is provided with more than one first through hole 1-1, and the piezoelectric material film 2 is provided with more than one second through hole 2-1; more than one third through hole 3-1 is arranged in the area outlined by the peripheral outline of the bottom electrode 3; wherein the first via 1-1, the second via 2-1 and the third via 3-1 are for etching a corrosive fluid of a cavity on the substrate 4; the overlapping area of the first projection area of the second through hole 2-1 on the area outlined by the peripheral outline of the top electrode 1 and the first through hole 1-1 is a first hollowed-out area; the overlapping area of the second projection area of the second through hole 2-1 on the area outlined by the peripheral outline of the bottom electrode 3 and the third through hole 3-1 is a second hollowed-out area. According to the embodiment of the application, under the condition that a sacrificial layer process, a substrate back surface photoetching process and a Bragg reflecting layer are not required to be applied, the preparation process of the bulk acoustic wave resonator is simplified by etching the corrosive fluid of the cavity on the substrate through the arranged first through hole 1-1, the second through hole 2-1 and the third through hole 3-1.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The accompanying drawings are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate and do not limit the application.
FIG. 1 is a perspective view of a bulk acoustic wave resonator according to an embodiment of the present invention;
FIG. 2 is a cross-sectional view of a bulk acoustic wave resonator according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of an admittance curve of a bulk acoustic wave resonator according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of the admittance curve of a bulk acoustic wave resonator according to another embodiment of the present invention;
FIG. 5 is a schematic diagram of the admittance curve of a bulk acoustic wave resonator according to yet another embodiment of the present invention;
FIG. 6 is a two-dimensional partial schematic diagram of a bulk acoustic wave resonator according to an embodiment of the present invention;
FIG. 7 is a schematic view of an embodiment of an isolation layer;
FIG. 8 is a schematic diagram of a notch according to an embodiment of the present invention;
FIG. 9 is a schematic diagram of an isolation trench according to an embodiment of the present invention;
FIG. 10 is a schematic view of an extraction electrode according to an embodiment of the present invention;
FIG. 11 is a flowchart of a method of fabricating a bulk acoustic wave resonator according to an embodiment of the present invention;
FIG. 12 is a schematic diagram showing the constitution of a bulk acoustic wave resonator according to an embodiment of the present invention;
FIG. 13 is a schematic diagram showing the constitution of a bulk acoustic wave resonator according to another embodiment of the present invention;
FIG. 14 is a schematic diagram showing the constitution of a bulk acoustic wave resonator according to still another embodiment of the present invention;
FIG. 15 is a schematic diagram showing the constitution of a bulk acoustic wave resonator according to still another embodiment of the present invention;
Fig. 16 is a schematic diagram showing the composition of a bulk acoustic wave resonator according to still another embodiment of the present invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present application more apparent, embodiments of the present application will be described in detail hereinafter with reference to the accompanying drawings. It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be arbitrarily combined with each other.
The steps illustrated in the flowchart of the figures may be performed in a computer system, such as a set of computer-executable instructions. Also, while a logical order is depicted in the flowchart, in some cases, the steps depicted or described may be performed in a different order than presented herein.
Fig. 1 is a perspective view of a bulk acoustic wave resonator according to an embodiment of the present invention, and fig. 2 is a cross-sectional view of a bulk acoustic wave resonator according to an embodiment of the present invention, as shown in fig. 1 and 2, including: a top electrode 1, a piezoelectric material film 2, a bottom electrode 3 and a substrate 4; wherein,
The area outlined by the peripheral outline of the top electrode 1 is provided with more than one first through hole 1-1, and the piezoelectric material film 2 is provided with more than one second through hole 2-1; more than one third through hole 3-1 is arranged in the area outlined by the peripheral outline of the bottom electrode 3;
Wherein the first through hole 1-1, the second through hole 2-1 and the third through hole 3-1 are used for etching a corrosive fluid of a cavity on the substrate 4; the overlapping area of the first projection area of the second through hole 2-1 on the area outlined by the peripheral outline of the top electrode 1 and the first through hole 1-1 is a first hollowed-out area; the overlapping area of the second projection area of the second through hole 2-1 on the area outlined by the peripheral outline of the bottom electrode 3 and the third through hole 3-1 is a second hollowed-out area.
In the embodiment of the invention, a first through hole 1-1 and a third through hole 3-1 are respectively arranged in the area defined by the peripheral outlines of a top electrode 1 and a bottom electrode 3; in an illustrative example, the top electrode 1 has only the first through hole 1-1 and the bottom electrode 3 has only the third through hole 3-1.
According to the embodiment of the invention, under the condition that a sacrificial layer process, a substrate back surface photoetching process and a Bragg reflecting layer are not required to be applied, the preparation process of the bulk acoustic wave resonator is simplified by etching the corrosive fluid of the cavity on the substrate through the arranged first through hole 1-1, the second through hole 2-1 and the third through hole 3-1.
In one illustrative example, the via sizes and locations of the first, second, and third vias 1-1, 2-1, 3-1 of the present embodiments may be analyzed and set by one skilled in the art based on the volume of the corrosive fluid, the location of the cavity, and the etching rate of the substrate.
In one illustrative example, the corrosive fluid in an embodiment of the present invention may include: xenon difluoride. In one illustrative example, the corrosive fluids of embodiments of the present invention may be determined by one skilled in the art based on the material of the substrate.
In an illustrative example, the material of the substrate of the present invention may be silicon or silicon carbide, and the substrate 4 is etched by a corrosive fluid to obtain a cavity; the embodiment of the invention utilizes the substrate to weaken the vibration of the piezoelectric material film 2, the top electrode 1 and the bottom electrode 3 at the edge of the bulk acoustic wave resonator, thereby realizing the inhibition of parasitic modes.
In an illustrative example, the piezoelectric material film 2 of the embodiment of the present invention is composed of one or more layers of any one of the following piezoelectric materials:
aluminum nitride, scandium-doped aluminum nitride, lithium niobate, lithium tantalate, and lead zirconate titanate.
In an exemplary embodiment, the projections of the top electrode 1 on the plane of the top of the bottom electrode 3 are all located in the area outlined by the peripheral outline of the bottom electrode 3.
In an exemplary embodiment, the ratio of the area of the first through hole 1-1 to the area of the peripheral outline border region of the top electrode 1 is a first preset ratio.
In an exemplary embodiment, the ratio of the area of the second through hole 2-1 to the area of the peripheral outline border region of the top electrode 1 is a second preset ratio.
In an exemplary embodiment, the ratio of the area of the third through hole 3-1 to the area of the peripheral outline border region of the top electrode 1 is a third preset ratio.
In one illustrative example, the first preset ratio in embodiments of the present invention is greater than 0.001 but less than 0.7; the second preset ratio is greater than 0.001 but less than 0.7; the third predetermined ratio is greater than 0.001 but less than 0.7.
In an exemplary embodiment, the first preset ratio, the second preset ratio, and the third preset ratio of the embodiment of the present invention may be adjusted by those skilled in the art based on the performance of the prepared bulk acoustic wave resonator, and in an exemplary embodiment, the first preset ratio, the second preset ratio, and the third preset ratio of the embodiment of the present invention may be greater than 0.01 but less than 0.09.
In an illustrative example, the ratio of the area of the upper surface of the cavity of the substrate 4 to the area of the area outlined by the peripheral outline of the top electrode 1 is a fourth preset ratio.
In one illustrative example, the fourth predetermined ratio in embodiments of the present invention is greater than 0.8 but less than 4.
In an exemplary embodiment, the ratio of the area of the first hollowed-out area to the area of the peripheral outline border area of the top electrode 1is a fifth preset ratio;
The ratio of the area of the second hollowed-out area to the area of the peripheral outline circled area of the top electrode 1 is a sixth preset ratio;
wherein the fifth preset ratio is greater than 0.001 but less than 0.7; the sixth predetermined ratio is greater than 0.001 but less than 0.7.
In an exemplary embodiment, the fifth preset ratio and the sixth preset ratio may be adjusted by those skilled in the art based on the performance of the prepared bulk acoustic wave resonator, and in an exemplary embodiment, the fifth preset ratio and the sixth preset ratio may be greater than 0.01 but less than 0.09. In an exemplary embodiment, when the materials of the top electrode 1 and the bottom electrode 3 are both aluminum, the piezoelectric material film 2 is aluminum nitride, the substrate 4 is silicon, the peripheral outline of the upper surfaces of the top electrode 1 and the bottom electrode 3 is circular, and the radius of the top electrode 1 and the radius of the bottom electrode 3 are both larger than the radius of the upper surface of the cavity of the substrate 4; the values of the parameters are shown in table 1; FIG. 3 is a schematic view showing the admittance curves of a bulk acoustic wave resonator according to an embodiment of the present invention, wherein the radius of the upper surface of the cavity on the substrate 4 is 58 micrometers (μm), and the admittance curves are in a small frequency range; FIG. 4 is a schematic view showing the admittance curves of a bulk acoustic wave resonator according to another embodiment of the present invention, wherein the radius of the upper surface of the cavity on the substrate 4 is 58 μm, and the admittance curves are over a wide frequency range; the ratio of the area of the upper surface of the cavity on the substrate 4 to the area of the area delineated by the peripheral outline of the top electrode 1 is a fourth preset ratio; the bulk acoustic wave resonator designed based on the parameters of table 1 in the embodiment of the invention has a series resonance frequency f s of 4.876 gigahertz (GHz), a parallel resonance frequency f p of 5.024GHz and a calculated value of an electromechanical coupling coefficient of 7.27%. Under the combination of the parameters, the radius of the upper surface of the cavity on the substrate 4 is smaller than the radius of the top electrode and the bottom electrode, so that the vibration of the piezoelectric material film and the electrode at the edge of the bulk acoustic wave resonator is weakened, and the parasitic mode caused by the edge of the bulk acoustic wave resonator is restrained. If the radius of the upper surface of the cavity on the substrate 4 is larger than the radii of the top electrode and the bottom electrode, for example, r 3 =62 μm, the admittance curve of the bulk acoustic wave resonator in a small frequency range is shown in fig. 5, and the parasitic modes in the admittance curve of fig. 5 are more compared with those in fig. 3 and fig. 5.
| Parameters (parameters) | Numerical value/micron | Parameters (parameters) | Numerical value/micron | Parameters (parameters) | Numerical value/micron |
| x1 | 5 | r1 | 60 | ht | 0.07 |
| x2 | 4 | r2 | 60 | hp | 1 |
| x3 | 5 | r3 | 58 | hb | 0.07 |
TABLE 1
FIG. 6 is a schematic two-dimensional partial view of a bulk acoustic wave resonator according to an embodiment of the present invention, wherein the two-dimensional partial structure is rotated 360 ° along a rotation axis 9 to form a three-dimensional bulk acoustic wave resonator as shown in FIG. 6; assume that: the top electrode 1 and the bottom electrode 3 are round; the number of the first through holes 1-1 is 1 and the first through holes are round, and the number of the second through holes 2-1 is 1 and the second through holes are round; the number of the third through holes 3-1 is 1 and is circular; the center of the first through hole 1-1 is the geometric center of the top electrode 1, the center of the second through hole 2-1 is the geometric center of the piezoelectric material film 2, the third through hole 3-1 is the geometric center of the bottom electrode 3, and the meanings of the parameters in the figure are respectively as follows: x 1 is the radius of the first through hole 1-1, x 2 is the radius of the second through hole 2-1, x 3 is the radius of the third through hole 3-1, r 1 is the radius of the top electrode 1, r 2 is the radius of the bottom electrode 3, r 3 is the radius of the upper surface of the cavity, h t is the thickness of the top electrode 1, h p is the thickness of the piezoelectric material film 2, and h b is the thickness of the bottom electrode 3. In the embodiment of the invention, when the first through hole 1-1, the second through hole 2-1 and the third through hole 3-1 are all round, the three-dimensional structures of the top electrode lead-out electrode 5 and the bottom electrode lead-out electrode 8 which are ignored can be formed by rotating a two-dimensional geometric model around a central axis, so that modeling simulation is facilitated. The series resonant frequency f s and the parallel resonant frequency f p of the embodiment of the invention jointly determine the electromechanical coupling coefficient of the bulk acoustic wave resonatorIs of a size of (a) and (b), the first-order taylor approximation formula is adopted as follows:
In an exemplary embodiment, the admittance curve is obtained based on the parameters of the bulk acoustic wave resonator, and the expression of the piezoelectric equation for obtaining the admittance curve is as follows:
T＝cS-eE
D＝εE-eS
Wherein T is a stress matrix, c is a piezoelectric material stiffness matrix, S is a strain matrix, E is a piezoelectric stress matrix, E is electrostatic field strength, D is electrical displacement, and ε is a piezoelectric material dielectric matrix; adjusting the resonant frequency and the electromechanical coupling coefficient of the bulk acoustic wave resonator according to a piezoelectric stress matrix e, wherein the piezoelectric stress matrix is as follows:
Wherein e15, e22, e24, e31 and e33 are piezoelectric coefficients of the piezoelectric materials in the corresponding directions respectively; based on the equation, determining a theoretical admittance curve of the bulk acoustic wave resonator by using a finite element simulation method and adjusting geometric parameters; and manufacturing the bulk acoustic wave resonator, testing to obtain an actual admittance curve of the bulk acoustic wave resonator, further adjusting the geometric dimension and the technological parameters according to the actual admittance curve, and finally determining and preparing the geometric dimension and the technological parameters of the bulk acoustic wave resonator meeting the requirements.
In an exemplary embodiment, the first through hole 1-1 in the embodiment of the present invention is any one of the following shapes: circles, ovals, regular polygons, trapezoids, and irregular pentagons;
In an illustrative example, the second through hole 2-1 in the embodiment of the present invention is any one of the following shapes: circles, ovals, regular polygons, trapezoids, and irregular pentagons;
in an illustrative example, the third through hole 3-1 in the embodiment of the present invention is any one of the following shapes: circles, ovals, regular polygons, trapezoids, and irregular pentagons.
In an illustrative example, the shape of the outline of the outer periphery of the second projection area formed by projecting the top electrode 1 onto the plane on which the top of the bottom electrode 3 is located in the embodiment of the present invention includes any one of the following:
Circles, ovals, regular polygons, trapezoids, and irregular pentagons. In one illustrative example, an embodiment of the present invention a regular polygon includes: equilateral polygons, rectangles, and the like.
In one illustrative example, the top electrode 1 of the present embodiment is composed of one or more layers of conductive material;
In one illustrative example, the conductive material in embodiments of the present invention includes a conductive compound or any of the following conductive elements: gold, aluminum, copper, titanium, molybdenum, and platinum.
In one illustrative example, the bottom electrode 3 of the present embodiment is composed of one or more layers of conductive material;
In one illustrative example, the conductive material in embodiments of the present invention includes a conductive compound or any of the following conductive elements: gold, aluminum, copper, titanium, molybdenum, and platinum.
In an exemplary embodiment, the top electrode 1 in the embodiment of the invention adopts an aluminum-platinum double-layer electrode, wherein aluminum is deposited firstly and then platinum is deposited on the double-layer electrode, and the platinum is used as an anti-oxidation protective layer to prevent the upper surface of the aluminum layer from being oxidized, so that the reliability of the device in long-term service is improved;
in an exemplary embodiment, the bottom electrode 3 in the embodiment of the invention adopts an aluminum-platinum double-layer electrode, aluminum is deposited firstly and then platinum is deposited, the platinum is used as an anti-oxidation protective layer to prevent the upper surface of the aluminum layer from being oxidized, and the reliability of the device in long-term service is improved; the quality of the grown aluminum nitride is better when the upper surface of the bottom electrode 3 is platinum.
In an illustrative example, the bulk acoustic wave resonator of the embodiment of the present invention further includes: a top electrode lead-out electrode 5;
an isolating layer 6 or a cavity 7 is arranged between the top electrode lead-out electrode 5 and the piezoelectric material film 2;
wherein the isolating layer 6 or the cavity 7 is used for isolating the top electrode lead-out electrode 5 and the piezoelectric material film 2.
FIG. 7 is a schematic view of an isolation layer according to an embodiment of the present invention, as shown in FIG. 7, an isolation layer 6 is disposed between the top electrode lead-out electrode 5 and the piezoelectric material film 2, and the isolation layer 6 isolates the top electrode lead-out electrode 5 and the piezoelectric material film 2; in one illustrative example, the barrier layer 6 of the present embodiment may be prepared by deposition.
In an illustrative example, the top electrode extraction electrode 5 of the embodiment of the present invention is provided with a notch 3-2 of a preset shape at the position of the fourth projection area of the bottom electrode 3;
Wherein the area of the notch 3-2 comprises a fourth projection area.
FIG. 8 is a schematic view of a notch according to an embodiment of the present invention, as shown in FIG. 8, a notch 3-2 is provided on the bottom electrode 3; the embodiment of the invention is based on the arrangement of the notch 3-2, and the parasitic mode caused by superposition of the projection areas of the top electrode leading-out electrode 5 and the bottom electrode 3 is restrained.
In an illustrative example, the bulk acoustic wave resonator of the embodiment of the present invention further includes a top electrode extraction electrode 5 and a bottom electrode extraction electrode 8, and isolation trenches 2-2 are etched on the piezoelectric material film 2;
Wherein, the projection of the isolation groove 2-2 on the plane where the top of the bottom electrode 3 is positioned in the area formed by the bottom electrode 3 and the bottom electrode leading-out electrode 8; the isolation trench 2-2 is located in an intermediate region formed by the outer peripheral contour of the region composed of the bottom electrode 3 and the bottom electrode lead-out electrode 8 and the outer peripheral contour of the top electrode 1.
In an exemplary embodiment, the top electrode 1 and the bottom electrode 3 are circular, the isolation groove 2-2 is in a fan shape, the inner radius of the isolation groove 2-2 is larger than the outer radius of the top electrode 1, and the outer radius of the isolation groove 2-2 is smaller than the outer radius of the bottom electrode 3.
Fig. 9 is a schematic diagram of an isolation groove according to an embodiment of the present invention, as shown in fig. 9, in which propagation of sound waves from an effective area of a bulk acoustic wave resonator to the surroundings is effectively suppressed by the isolation groove 2-2, and interaction between a plurality of bulk acoustic wave resonators with smaller intervals is reduced.
In an illustrative example, the bulk acoustic wave resonator of the embodiment of the present invention further includes: a bottom electrode extraction electrode 8; in one illustrative example, a bulk acoustic wave resonator of an embodiment of the present invention may include two or more top electrode extraction electrodes 5 and two or more bottom electrode extraction electrodes 8; fig. 10 is a schematic view of the extraction electrode according to an embodiment of the present invention, and as shown in fig. 10, the bulk acoustic wave resonator includes two top electrode extraction electrodes 5 and two bottom electrode extraction electrodes 8.
Fig. 11 is a flowchart of a method for manufacturing a bulk acoustic wave resonator according to an embodiment of the present invention, as shown in fig. 11, including:
Step 1101, depositing a bottom electrode material and a bottom electrode lead-out electrode material on the upper surface of the substrate, and performing patterning treatment to obtain a bottom electrode lead-out electrode and a bottom electrode comprising a third through hole;
Step 1102, preparing a piezoelectric material film on the upper surface of the bottom electrode material; here, the method of preparing the piezoelectric material thin film includes deposition.
Step 1103, etching the piezoelectric material film to obtain a second through hole;
step 1104, depositing a top electrode material and a top electrode lead-out electrode material on the upper surface of the piezoelectric material film, and performing graphical treatment to obtain a top electrode lead-out electrode and a top electrode comprising a first through hole;
step 1105, enabling corrosive fluid to flow to the substrate etching cavity through the first through hole, the second through hole and the third through hole, and releasing the bulk acoustic wave resonator;
The overlapping area of the first projection area of the second through hole on the area outlined by the peripheral outline of the top electrode and the first through hole is a first hollowed-out area; the overlapping area of the second projection area of the second through hole on the area outlined by the peripheral outline of the bottom electrode and the third through hole is a second hollowed-out area.
Fig. 12 to 16 are final views of a bulk acoustic wave resonator according to an embodiment of the present invention; as shown in fig. 12, the bottom electrode 3 of the bulk acoustic wave resonator obtained in step 1101 is performed, and the bottom electrode 3 includes a third through hole 3-1 therein; as shown in fig. 13, the piezoelectric material film 2 of the bulk acoustic wave resonator obtained in step 1102 is performed; as shown in fig. 13, step 1103 is performed to etch the piezoelectric material film 2 to form a second through hole 2-1; as shown in fig. 14, the top electrode 1 of the bulk acoustic wave resonator obtained in step 1104 is performed, and the top electrode 1 includes a first through hole 1-1; as shown in fig. 15, step 1105 is performed to flow the corrosive fluid to the substrate etching cavity through the first through hole, the second through hole, and the third through hole, releasing the bulk acoustic wave resonator.
According to the embodiment of the invention, the bottom electrode is directly deposited on the substrate, so that the thinner piezoelectric material can have good crystal face orientation and lower surface roughness; the process is simpler without a sacrificial layer process, a substrate back photoetching process and a Bragg reflection layer; damping vibration of the piezoelectric material film and the electrode at the edge of the resonator by using the substrate, thereby suppressing parasitic modes; when the first through hole, the second through hole and the third through hole are all round, the three-dimensional structure of the bulk acoustic wave resonator, which omits the top electrode lead-out electrode and the bottom electrode lead-out electrode, can be formed by rotating a two-dimensional geometric model around a central shaft, and modeling simulation is facilitated. The embodiment of the invention can flexibly adjust the area of the upper surface of the substrate material cavity to be close to or even smaller than the area of the effective area of the bulk acoustic wave resonator, ensure that the area of the substrate support exists between the adjacent resonators under the condition of extremely small spacing between the adjacent resonators, effectively relieve the bending problem of the piezoelectric resonator electrode and the piezoelectric material film in the ultra-high frequency filter with high integration level, and further improve the electrical characteristics of the resonator and the filter.
"One of ordinary skill in the art will appreciate that all or some of the steps, systems, functional modules/units in the apparatus, and methods disclosed above may be implemented as software, firmware, hardware, and suitable combinations thereof. In a hardware implementation, the division between the functional modules/units mentioned in the above description does not necessarily correspond to the division of physical components; for example, one physical component may have multiple functions, or one function or step may be performed cooperatively by several physical components. Some or all of the components may be implemented as software executed by a processor, such as a digital signal processor or microprocessor, or as hardware, or as an integrated circuit, such as an application specific integrated circuit. Such software may be distributed on computer readable media, which may include computer storage media (or non-transitory media) and communication media (or transitory media). The term computer storage media includes both volatile and nonvolatile, removable and non-removable media implemented in any method or technology for storage of information such as computer readable instructions, data structures, program modules or other data, as known to those skilled in the art. Computer storage media includes, but is not limited to, RAM, ROM, EEPROM, flash memory or other memory technology, CD-ROM, digital Versatile Disks (DVD) or other optical disk storage, magnetic cassettes, magnetic tape, magnetic disk storage or other magnetic storage devices, or any other medium which can be used to store the desired information and which can be accessed by a computer. Furthermore, as is well known to those of ordinary skill in the art, communication media typically embodies computer readable instructions, data structures, program modules or other data in a modulated data signal such as a carrier wave or other transport mechanism and includes any information delivery media. ".
Claims (9)
1. A bulk acoustic wave resonator comprising: a top electrode (1), a piezoelectric material film (2), a bottom electrode (3) and a substrate (4); wherein,
The area of the outline of the periphery of the top electrode (1) is provided with more than one first through hole (1-1), and the piezoelectric material film (2) is provided with more than one second through hole (2-1); more than one third through holes (3-1) are formed in the area defined by the peripheral outline of the bottom electrode (3);
Wherein the first through hole (1-1), the second through hole (2-1) and the third through hole (3-1) are for etching a corrosive fluid of a cavity on a substrate (4); the overlapping area of the first projection area of the second through hole (2-1) on the area outlined by the peripheral outline of the top electrode (1) and the first through hole (1-1) is a first hollowed-out area; the overlapping area of the second projection area of the second through hole (2-1) on the area outlined by the peripheral outline of the bottom electrode (3) and the third through hole (3-1) is a second hollowed-out area; the ratio of the area of the first through hole (1-1) to the area of the peripheral outline circled area of the top electrode (1) is a first preset ratio; the ratio of the area of the second through hole (2-1) to the area of the peripheral outline circled area of the top electrode (1) is a second preset ratio; the ratio of the area of the third through hole (3-1) to the area of the peripheral outline circled area of the top electrode (1) is a third preset ratio; the first preset ratio is greater than 0.001 but less than 0.7; the second preset ratio is greater than 0.001 but less than 0.7; the third preset ratio is greater than 0.001 but less than 0.7; the ratio of the area of the first hollowed-out area to the area of the peripheral outline circled area of the top electrode (1) is a fifth preset ratio; the ratio of the area of the second hollowed-out area to the area of the peripheral outline circled area of the top electrode (1) is a sixth preset ratio; the fifth preset ratio is greater than 0.001 but less than 0.7; the sixth preset ratio is greater than 0.001 but less than 0.7.
2. The bulk acoustic resonator according to claim 1, characterized in that the piezoelectric material film (2) consists of one or more layers of any one of the following piezoelectric materials:
aluminum nitride, scandium-doped aluminum nitride, lithium niobate, lithium tantalate, and lead zirconate titanate.
3. The bulk acoustic resonator according to claim 1, characterized in that the projections of the top electrode (1) on the plane of the top of the bottom electrode (3) are all located in the area outlined by the peripheral outline of the bottom electrode (3).
4. Bulk acoustic resonator according to claim 1, characterized in that the ratio of the area of the upper surface of the cavity on the substrate (4) to the area of the area delineated by the peripheral outline of the top electrode (1) is a fourth preset ratio;
Wherein the fourth preset ratio is greater than 0.8 but less than 4.
5. The bulk acoustic resonator according to claim 1, characterized in that the first via (1-1) is any of the following shapes: circles, ovals, regular polygons, trapezoids, and irregular pentagons;
The second through hole (2-1) is in any one of the following shapes: circles, ovals, regular polygons, trapezoids, and irregular pentagons;
the third through hole (3-1) is in any one of the following shapes: circles, ovals, regular polygons, trapezoids, and irregular pentagons.
6. Bulk acoustic resonator according to any of claims 1-5, characterized in that the top electrode (1) consists of one or more layers of conductive material; and/or the number of the groups of groups,
The bottom electrode (3) is composed of one or more layers of conductive material.
7. The bulk acoustic resonator according to any of claims 1-5, characterized in that it further comprises a top electrode extraction electrode (5);
An isolating layer (6) or a cavity (7) is arranged between the top electrode leading-out electrode (5) and the piezoelectric material film (2); or alternatively
A notch (3-2) with a preset shape is formed in the position of the fourth projection area of the bottom electrode (3) on the top electrode extraction electrode (5);
Wherein the area of the notch (3-2) comprises the fourth projection area; the isolating layer (6) or the cavity (7) is used for isolating the top electrode leading-out electrode (5) and the piezoelectric material film (2).
8. The bulk acoustic resonator according to any one of claims 1-5, further comprising a top electrode extraction electrode (5) and a bottom electrode extraction electrode (8), wherein isolation grooves (2-2) are etched on the piezoelectric material film (2);
The projection of the isolation groove (2-2) on the plane where the top of the bottom electrode (3) is located in an area formed by the bottom electrode (3) and the bottom electrode extraction electrode (8); the isolation groove (2-2) is positioned in an intermediate area formed by the peripheral outline of the area formed by the bottom electrode (3) and the bottom electrode extraction electrode (8) and the peripheral outline of the top electrode (1).
9. A method of making a bulk acoustic wave resonator comprising:
Depositing a bottom electrode material and a bottom electrode lead-out electrode material on the upper surface of the substrate, and performing patterning treatment to obtain a bottom electrode lead-out electrode and a bottom electrode comprising a third through hole;
Preparing a piezoelectric material film on the upper surface of the bottom electrode material;
etching the piezoelectric material film to obtain a second through hole;
depositing a top electrode material and a top electrode lead-out electrode material on the upper surface of the piezoelectric material film, and performing patterning treatment to obtain a top electrode lead-out electrode and a top electrode comprising a first through hole;
the corrosive fluid flows to the substrate etching cavity through the first through hole, the second through hole and the third through hole to release the bulk acoustic wave resonator;
The overlapping area of the first projection area of the second through hole on the area outlined by the peripheral outline of the top electrode and the first through hole is a first hollowed-out area; the overlapping area of the second projection area of the second through hole on the area outlined by the peripheral outline of the bottom electrode and the third through hole is a second hollowed-out area; the ratio of the area of the first through hole to the area of the peripheral outline delineating area of the top electrode is a first preset ratio; the ratio of the area of the second through hole to the area of the peripheral outline delineating region of the top electrode is a second preset ratio; the ratio of the area of the third through hole to the area of the peripheral outline delineating region of the top electrode is a third preset ratio; the first preset ratio is greater than 0.001 but less than 0.7; the second preset ratio is greater than 0.001 but less than 0.7; the third preset ratio is greater than 0.001 but less than 0.7; the ratio of the area of the first hollowed-out area to the area of the outline delineating area of the periphery of the top electrode is a fifth preset ratio; the ratio of the area of the second hollowed-out area to the area of the peripheral outline delineating area of the top electrode is a sixth preset ratio; the fifth preset ratio is greater than 0.001 but less than 0.7; the sixth preset ratio is greater than 0.001 but less than 0.7.
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| CN105897211A (en) * | 2016-05-18 | 2016-08-24 | 华南理工大学 | Film bulk acoustic resonator having multiple resonance modes and preparation method thereof and filter |
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| US11070184B2 (en) * | 2016-03-11 | 2021-07-20 | Akoustis, Inc. | Piezoelectric acoustic resonator manufactured with piezoelectric thin film transfer process |
| CN109302158B (en) * | 2018-08-01 | 2021-07-16 | 广州市艾佛光通科技有限公司 | Film bulk acoustic resonator and preparation method thereof |
| CN109474255B (en) * | 2018-11-14 | 2021-03-02 | 开元通信技术（厦门）有限公司 | Film bulk acoustic resonator, manufacturing method thereof and filter |
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