[go: up one dir, main page]

CN113809173B - Millimeter wave switch chip - Google Patents

Millimeter wave switch chip Download PDF

Info

Publication number
CN113809173B
CN113809173B CN202111087348.5A CN202111087348A CN113809173B CN 113809173 B CN113809173 B CN 113809173B CN 202111087348 A CN202111087348 A CN 202111087348A CN 113809173 B CN113809173 B CN 113809173B
Authority
CN
China
Prior art keywords
layer
ohmic contact
millimeter wave
contact layer
back gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202111087348.5A
Other languages
Chinese (zh)
Other versions
CN113809173A (en
Inventor
王俊龙
陈海森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Chengen Heat Vision Technology Co ltd
Original Assignee
Shenzhen Chengen Heat Vision Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen Chengen Heat Vision Technology Co ltd filed Critical Shenzhen Chengen Heat Vision Technology Co ltd
Priority to CN202111087348.5A priority Critical patent/CN113809173B/en
Publication of CN113809173A publication Critical patent/CN113809173A/en
Application granted granted Critical
Publication of CN113809173B publication Critical patent/CN113809173B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

The invention discloses a millimeter wave switch chip, wherein an AlN buffer layer is formed on the upper surface of a SiC substrate, a first GaN layer is formed on the upper surface of the AlN buffer layer, the lower surface of part of the first GaN layer is exposed through a back gate groove, and a back gate is formed on the exposed part of the lower surface of the first GaN layer; the source ohmic contact layer is formed on the left side of the upper surface of the first GaN layer, the drain ohmic contact layer is formed on the right side of the upper surface of the first GaN layer, the first AlGaN layer, the second GaN layer and the second AlGaN layer are formed on the upper surface of the first GaN layer between the source ohmic contact layer and the drain ohmic contact layer from bottom to top, the source is formed on the upper surface of the source ohmic contact layer, the drain is formed on the upper surface of the drain ohmic contact layer, and the top gate is formed on the upper surface of the second AlGaN layer. The chip has the advantages of high switching frequency speed and the like.

Description

Millimeter wave switch chip
Technical Field
The invention relates to the technical field of millimeter wave switching devices, in particular to a millimeter wave switching chip with high switching frequency speed.
Background
Millimeter wave refers to electromagnetic wave with frequency in 30GHz-300GHz, and in millimeter wave frequency band, millimeter wave switch plays roles of turning on and off millimeter wave signal transmission. At present, a millimeter wave frequency band switch is manufactured based on a PIN junction, but a millimeter wave switch chip based on the technology is difficult to use for space transmission. In the millimeter wave frequency band, the GaN HEMT (high electron mobility transistor) has high electron mobility and high speed due to the existence of two-dimensional electron gas, and can effectively work in the millimeter wave frequency band. The GaN-based HEMT structure is hopeful to realize a switch chip for millimeter wave transmission in the transverse direction and transmission in the longitudinal space.
Disclosure of Invention
The technical problem to be solved by the invention is how to provide a millimeter wave switch chip with high switching frequency speed.
In order to solve the technical problems, the invention adopts the following technical scheme: a millimeter wave switch chip, characterized in that: the semiconductor chip comprises a SiC substrate, wherein an AlN buffer layer is formed on the upper surface of the SiC substrate, a first GaN layer is formed on the upper surface of the AlN buffer layer, a back gate groove is formed at the bottom of the chip, the lower surface of part of the first GaN layer is exposed through the back gate groove, and a back gate is formed on the exposed part of the lower surface of the first GaN layer; the source ohmic contact layer is formed on the left side of the upper surface of the first GaN layer, the drain ohmic contact layer is formed on the right side of the upper surface of the first GaN layer, the first AlGaN layer, the second GaN layer and the second AlGaN layer are formed on the upper surface of the first GaN layer between the source ohmic contact layer and the drain ohmic contact layer from bottom to top, the source is formed on the upper surface of the source ohmic contact layer, the drain is formed on the upper surface of the drain ohmic contact layer, and the top gate is formed on the upper surface of the second AlGaN layer.
The further technical proposal is that: the back gate is not in contact with the SiC substrate and the AlN buffer layer.
The further technical proposal is that: the upper surfaces of the source ohmic contact layer, the drain ohmic contact layer and the second AlGaN layer are on the same horizontal plane.
The further technical proposal is that: the area of the source electrode is the same as that of the source electrode ohmic contact layer, the area of the drain electrode ohmic contact layer is the same as that of the drain electrode ohmic contact layer, and the area of the top gate is smaller than that of the second AlGaN layer.
The further technical proposal is that: the thickness of the back gate is smaller than the sum of the thicknesses of the SiC substrate and the AlN buffer layer.
Preferably, the SiC substrate has a thickness of 25 microns to 50 microns.
Preferably, the AlN buffer layer has a thickness of 10nm to 50nm.
Preferably, the first and second GaN layers have a thickness of 10nm to 50nm, and the first and second AlGaN layers have a thickness of 15nm to 100nm, wherein the Al composition is 30%.
Preferably, the source ohmic contact layer and the drain ohmic contact layer are made of Ti, al, ni and/or Au.
Preferably, the top gate and the back gate are schottky contact electrodes, and the manufacturing materials are Ti, pt and/or Au.
The beneficial effects of adopting above-mentioned technical scheme to produce lie in: according to the application, the switch chip is manufactured based on a GaN HEMT device structure, a GaN/AlGaN material structure is adopted, a double HEMT communication structure is adopted to manufacture the switch device, and a top gate and back gate double gate structure is adopted to increase control over two-dimensional electron gas. The millimeter wave switch can realize the switch effect on the millimeter wave transverse structure (the grid length direction) and the switch effect on the millimeter wave in the longitudinal space (perpendicular to the grid length direction). Because of adopting the double HEMT channel structure, the switching action on the high-power millimeter wave signal can be realized. Based on the millimeter wave switch chip provided by the application, the switch insertion loss is smaller than 3dB, the bearable power is larger than 5W, and the millimeter wave switch chip can be used as a space millimeter wave switch and applied to the whole millimeter wave frequency band, and the switch frequency speed is high and can reach 1GHz.
Drawings
The invention will be described in further detail with reference to the drawings and the detailed description.
FIG. 1 is a schematic diagram of a switch chip according to an embodiment of the present invention;
Wherein: 1. a SiC substrate; 2. an AlN buffer layer; 3. a first GaN layer; 4. a back gate; 5. a source ohmic contact layer; 6. a drain ohmic contact layer; 7. a first AlGaN layer; 8. a second GaN layer; 9. a second AlGaN layer; 10. a source electrode; 11. a drain electrode; 12. a top gate.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways other than those described herein, and persons skilled in the art will readily appreciate that the present invention is not limited to the specific embodiments disclosed below.
As shown in fig. 1, the embodiment of the invention discloses a millimeter wave switch chip, which comprises a SiC substrate 1, wherein an AlN buffer layer 2 is formed on the upper surface of the SiC substrate 1, and a first GaN layer 3 is formed on the upper surface of the AlN buffer layer 2; a back gate groove is formed at the bottom of the chip, the lower surface of a part of the first GaN layer 3 is exposed through the back gate groove, a back gate 4 is formed at the exposed part of the lower surface of the first GaN layer 3, the back gate 4 is not contacted with the SiC substrate 1 and the AlN buffer layer 2, and as can be seen from the figure, the thickness of the back gate 4 is smaller than the sum of the thicknesses of the SiC substrate 1 and the AlN buffer layer 2, that is, the back gate 4 is not exposed from the back gate groove; a source ohmic contact layer 5 is formed on the left side of the upper surface of the first GaN layer 3, a drain ohmic contact layer 6 is formed on the right side of the upper surface of the first GaN layer 3, the ohmic base layer is made of a metal material, a first AlGaN layer 7, a second GaN layer 8 and a second AlGaN layer 9 are formed on the upper surface of the first GaN layer 3 between the source ohmic contact layer 5 and the drain ohmic contact layer 6 from bottom to top, a source 10 is formed on the upper surface of the source ohmic contact layer 5, a drain 11 is formed on the upper surface of the drain ohmic contact layer 6, and a top gate 12 is formed on the upper surface of the second AlGaN layer 9.
Further, in the present application, as shown in fig. 1, the upper surfaces of the source ohmic contact layer 5, the drain ohmic contact layer 6 and the second AlGaN layer 9 are on the same horizontal plane, so that the chip has a better morphology. Further, the area of the source electrode 10 is the same as the area of the source ohmic contact layer 5 (the area refers to the area of the upper surface), the area of the drain electrode 11 is the same as the area of the drain ohmic contact layer 6, and the area of the top gate 12 is smaller than the area of the second AlGaN layer 9.
Preferably, the SiC substrate 1 may have a thickness of 25 micrometers to 50 micrometers; the AlN buffer layer 2 may have a thickness of 10nm to 50nm; the first and second GaN layers may have a thickness of 10nm to 50nm, and the first and second AlGaN layers may have a thickness of 15nm to 100nm, wherein the Al composition may be 30%; the source ohmic contact layer 5 and the drain ohmic contact layer 6 may be made of Ti, al, ni and/or Au; the top gate 12 and the back gate 4 are schottky contact electrodes, and the materials used for manufacturing the top gate and the back gate may be Ti, pt and/or Au. It should be noted that, in the present application, the thickness of the SiC substrate 1, the thickness of the AlN buffer layer 2, the thicknesses of the first and second GaN layers, and the thicknesses of the first and second AlGaN layers may also be other values, and the materials for manufacturing the source ohmic contact layer 5 and the drain ohmic contact layer 6 may also be other materials, so long as the requirements of the chip of the present application can be satisfied.
In the application, the chip limits electrons generated between interfaces due to piezoelectric polarization in a two-dimensional space due to the bending effect of energy bands between the AlGaN layer and the GaN layer, so that two-dimensional electron gas is formed, and millimeter waves are absorbed by using the concentration of the two-dimensional electron gas. Due to the adoption of the two-layer two-dimensional electron gas channel, when millimeter waves are transmitted from top to bottom, the concentration of electron gas in the two-dimensional electron gas can be regulated and controlled by adjusting the voltages of the top grid 12 and the back grid 4 through the absorption of the two-layer two-dimensional electron gas. When the concentration of the two-dimensional electron gas is high, the energy of the millimeter wave signal is absorbed by the two-dimensional electron gas, and the millimeter wave switch is in the off state. When the two-dimensional electron gas is exhausted by the top gate 12 and the back gate 4, the millimeter wave signal can pass through the switching device at this time, and only intrinsic absorption occurs, that is, the on state of the millimeter wave switch, at this time, insertion loss of the millimeter wave signal can be generated.
The epitaxial structure of the chip can be obtained by MOCVD or MBE, and the manufacturing process of the source electrode, the drain electrode and the top gate is very mature. According to the back gate in the scheme, the SiC layer and the AlN buffer layer on the back are required to be polished, part of the SiC layer and part of the AlN buffer layer are required to be removed by adopting a gas etching method, and then the back gate is manufactured on the back of the first GaN layer.
In summary, the switch chip is manufactured based on the GaN HEMT device structure, adopts a GaN/AlGaN material structure, adopts a double HEMT communication structure to manufacture the switch device, adopts a top gate and back gate double gate structure, and increases the control of two-dimensional electron gas. The millimeter wave switch can realize the switch effect on the millimeter wave transverse structure (the grid length direction) and the switch effect on the millimeter wave in the longitudinal space (perpendicular to the grid length direction). Because of adopting the double HEMT channel structure, the switching action on the high-power millimeter wave signal can be realized. Based on the millimeter wave switch chip provided by the application, the switch insertion loss is smaller than 3dB, the bearable power is larger than 5W, and the millimeter wave switch chip can be used as a space millimeter wave switch and applied to the whole millimeter wave frequency band, and the switch frequency speed is high and can reach 1GHz.

Claims (1)

1.一种毫米波开关芯片，其特征在于：包括SiC衬底（1），所述SiC衬底（1）的上表面形成有AlN缓冲层（2），所述AlN缓冲层（2）的上表面形成有第一GaN层（3），所述芯片的底部形成有背栅槽，通过背栅槽使得部分第一GaN层（3）的下表面露出，所述第一GaN层（3）的下表面的裸露部分形成有背栅（4）；所述第一GaN层（3）上表面的左侧形成有源极欧姆接触层（5），所述第一GaN层（3）上表面的右侧形成有漏极欧姆接触层（6），所述源极欧姆接触层（5）与所述漏极欧姆接触层（6）之间的第一GaN层（3）的上表面从下到上形成有第一AlGaN层（7）、第二GaN层（8）以及第二AlGaN层（9），所述源极欧姆接触层（5）的上表面形成有源极（10），所述漏极欧姆接触层（6）的上表面形成有漏极（11），所述第二AlGaN层（9）的上表面形成有顶栅（12）；1. A millimeter wave switch chip, characterized in that it comprises a SiC substrate (1), an AlN buffer layer (2) is formed on the upper surface of the SiC substrate (1), a first GaN layer (3) is formed on the upper surface of the AlN buffer layer (2), a back gate groove is formed at the bottom of the chip, a portion of the lower surface of the first GaN layer (3) is exposed through the back gate groove, and a back gate (4) is formed on the exposed portion of the lower surface of the first GaN layer (3); a source ohmic contact layer (5) is formed on the left side of the upper surface of the first GaN layer (3), and the first GaN layer (3) is provided with a back gate (4). A drain ohmic contact layer (6) is formed on the right side of the upper surface of the aN layer (3); a first AlGaN layer (7), a second GaN layer (8) and a second AlGaN layer (9) are formed on the upper surface of the first GaN layer (3) between the source ohmic contact layer (5) and the drain ohmic contact layer (6) from bottom to top; a source (10) is formed on the upper surface of the source ohmic contact layer (5); a drain (11) is formed on the upper surface of the drain ohmic contact layer (6); and a top gate (12) is formed on the upper surface of the second AlGaN layer (9); 所述源极欧姆接触层（5）、漏极欧姆接触层（6）以及第二AlGaN层（9）的上表面在同一水平面上；所述源极（10）的面积与所述源极欧姆接触层（5）的面积相同，所述漏极（11）的面积与所述漏极欧姆接触层（6）的面积相同，所述顶栅（12）的面积小于所述第二AlGaN层（9）的面积；The upper surfaces of the source ohmic contact layer (5), the drain ohmic contact layer (6) and the second AlGaN layer (9) are on the same horizontal plane; the area of the source (10) is the same as that of the source ohmic contact layer (5), the area of the drain (11) is the same as that of the drain ohmic contact layer (6), and the area of the top gate (12) is smaller than that of the second AlGaN layer (9); 所述背栅（4）不与SiC衬底（1）以及AlN缓冲层（2）接触；所述背栅（4）的厚度小于所述SiC衬底（1）与AlN缓冲层（2）厚度之和；所述SiC衬底（1）的厚度为25微米-50微米；所述AlN缓冲层（2）的厚度为10nm到50nm；所述第一和第二GaN层的厚度为10nm到50nm，第一和第二AlGaN层的厚度为15nm到100nm，其中Al组分为30%；源极欧姆接触层（5）和漏极欧姆接触层（6）的制作材料为Ti、Al、Ni和/或Au；所述顶栅（12）和背栅（4）为肖特基接触电极，其制作材料为Ti、Pt和/或Au；The back gate (4) is not in contact with the SiC substrate (1) and the AlN buffer layer (2); the thickness of the back gate (4) is less than the sum of the thicknesses of the SiC substrate (1) and the AlN buffer layer (2); the thickness of the SiC substrate (1) is 25 micrometers to 50 micrometers; the thickness of the AlN buffer layer (2) is 10 nm to 50 nm; the thickness of the first and second GaN layers is 10 nm to 50 nm, and the thickness of the first and second AlGaN layers is 15 nm to 100 nm, wherein the Al component is 30%; the source ohmic contact layer (5) and the drain ohmic contact layer (6) are made of Ti, Al, Ni and/or Au; the top gate (12) and the back gate (4) are Schottky contact electrodes, and the materials used to make them are Ti, Pt and/or Au; 所述芯片在AlGaN层和GaN层之间由于能带的弯曲效应，将界面之间由于压电极化产生的电子限制在一个二维空间内，形成二维电子气，利用二维电子气的浓度来吸收毫米波；由于采用了两层二维电子气通道，当毫米波从上到下进行传输的时候，需要经过两层二维电子气的吸收，通过调节顶栅（12）和背栅（4）的电压，调控二维电子气中的电子气浓度；当二维电子气浓度高时，毫米波信号的能量被二维电子气所吸收，此时处于毫米波开关的关断状态；当二维电子气被顶栅（12）和背栅（4）耗尽时，此时毫米波信号可通过开关器件，为毫米波开关的开状态，此时可产生毫米波信号的插入损耗。Due to the bending effect of the energy band between the AlGaN layer and the GaN layer, the chip confines the electrons generated by the piezoelectric polarization between the interfaces within a two-dimensional space, forming a two-dimensional electron gas, and utilizing the concentration of the two-dimensional electron gas to absorb the millimeter wave; due to the use of two layers of two-dimensional electron gas channels, when the millimeter wave is transmitted from top to bottom, it needs to be absorbed by the two layers of two-dimensional electron gas, and the electron gas concentration in the two-dimensional electron gas is regulated by adjusting the voltage of the top gate (12) and the back gate (4); when the concentration of the two-dimensional electron gas is high, the energy of the millimeter wave signal is absorbed by the two-dimensional electron gas, and the millimeter wave switch is in the off state at this time; when the two-dimensional electron gas is exhausted by the top gate (12) and the back gate (4), the millimeter wave signal can pass through the switch device, and the millimeter wave switch is in the on state, and the insertion loss of the millimeter wave signal can be generated at this time.
CN202111087348.5A 2021-09-16 2021-09-16 Millimeter wave switch chip Active CN113809173B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111087348.5A CN113809173B (en) 2021-09-16 2021-09-16 Millimeter wave switch chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111087348.5A CN113809173B (en) 2021-09-16 2021-09-16 Millimeter wave switch chip

Publications (2)

Publication Number Publication Date
CN113809173A CN113809173A (en) 2021-12-17
CN113809173B true CN113809173B (en) 2024-11-22

Family

ID=78941399

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111087348.5A Active CN113809173B (en) 2021-09-16 2021-09-16 Millimeter wave switch chip

Country Status (1)

Country Link
CN (1) CN113809173B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114695114B (en) * 2022-05-31 2022-09-09 中芯越州集成电路制造(绍兴)有限公司 Semiconductor device and method of making the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102239550A (en) * 2008-12-05 2011-11-09 松下电器产业株式会社 Field effect transistor
JP2015079806A (en) * 2013-10-16 2015-04-23 三菱電機株式会社 Hetero junction field effect transistor and manufacturing method of the same
US9306014B1 (en) * 2013-12-27 2016-04-05 Power Integrations, Inc. High-electron-mobility transistors
CN106298911A (en) * 2016-10-31 2017-01-04 电子科技大学 A kind of double junction gate gallium nitride heterojunction field effect transistor

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7566918B2 (en) * 2006-02-23 2009-07-28 Cree, Inc. Nitride based transistors for millimeter wave operation
JP2008124262A (en) * 2006-11-13 2008-05-29 Oki Electric Ind Co Ltd Method of manufacturing AlGaN / GaN-HEMT using selective regrowth
CN103400865B (en) * 2013-07-31 2016-07-13 中国电子科技集团公司第十三研究所 GaN Schottky diode based on polarization doping
CN105118774B (en) * 2015-07-22 2018-03-30 中国电子科技集团公司第十三研究所 The preparation method of nano T-type grid
EP3174102B1 (en) * 2015-11-27 2022-09-28 Nexperia B.V. Semiconductor device and method of making a semiconductor device
CN109411349A (en) * 2018-09-10 2019-03-01 西安电子科技大学 A kind of High Linear millimetric wave device based on the modulation of charge branch
EP3973576A1 (en) * 2019-05-23 2022-03-30 Power Integrations, Inc. An enhancement mode metal insulator semiconductor high electron mobility transistor
CN112635556B (en) * 2020-12-24 2025-01-14 华南理工大学 An enhanced HEMT device and a method for preparing the same
CN113113477A (en) * 2021-03-01 2021-07-13 西安电子科技大学 GaN radio frequency device based on ScAlN double-channel heterojunction structure and preparation method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102239550A (en) * 2008-12-05 2011-11-09 松下电器产业株式会社 Field effect transistor
JP2015079806A (en) * 2013-10-16 2015-04-23 三菱電機株式会社 Hetero junction field effect transistor and manufacturing method of the same
US9306014B1 (en) * 2013-12-27 2016-04-05 Power Integrations, Inc. High-electron-mobility transistors
CN106298911A (en) * 2016-10-31 2017-01-04 电子科技大学 A kind of double junction gate gallium nitride heterojunction field effect transistor

Also Published As

Publication number Publication date
CN113809173A (en) 2021-12-17

Similar Documents

Publication Publication Date Title
CN101604704B (en) HEMT device and manufacturing method thereof
CN101312207B (en) Enhancement type HEMT device structure and its manufacture method
US7566918B2 (en) Nitride based transistors for millimeter wave operation
JP5366798B2 (en) Wide bandgap transistor with high efficiency and / or high power density
US8637905B2 (en) Semiconductor device and fabrication method thereof
US7355215B2 (en) Field effect transistors (FETs) having multi-watt output power at millimeter-wave frequencies
CN101414627B (en) Insulated gate source-drain compound field plate high electron mobility transistor and manufacturing method thereof
JP2004335960A (en) Field effect transistor
WO2019176434A1 (en) Semiconductor device, semiconductor device production method, and electronic device
CN113809173B (en) Millimeter wave switch chip
CN101414623A (en) Groove gate type source-leakage composite field plate heterojunction field effect transistor and preparation method thereof
CN104637991B (en) An Improved GaN High Electron Mobility Transistor with Field Plate Structure
CN101414626A (en) Insulated gate type gate-leakage composite field plate power device
CN101414635B (en) Groove insulated gate type gate-leakage composite field plate power device and preparation method thereof
CN113540232A (en) AlGaN/GaN heterojunction high electron mobility transistor
CN109742144B (en) Groove gate enhanced MISHEMT device and manufacturing method thereof
CN101414636B (en) Grooved Insulated Gate Source-Drain Composite Field Plate High Electron Mobility Transistor
CN215988771U (en) Millimeter wave switch chip
WO2025107301A1 (en) Transistor device, semiconductor epitaxial structure, and preparation method therefor
CN115050829A (en) Epitaxial structure of semiconductor device, preparation method of epitaxial structure and semiconductor device
CN101419985B (en) Insulated Gate Source Field Plate Heterojunction Field Effect Transistor
CN222190732U (en) Semiconductor device
CN222485185U (en) Semiconductor device
CN220604694U (en) HEMT devices
CN110875384A (en) Semiconductor device and method of manufacturing the same

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right
TA01 Transfer of patent application right

Effective date of registration: 20241025

Address after: Room 1203, Building D, Aote Kexing Science Park, No. 10 Qiongyu Road, Science Park Community, Yuehai Street, Nanshan District, Shenzhen City, Guangdong Province, China 515100

Applicant after: Shenzhen Chengen heat Vision Technology Co.,Ltd.

Country or region after: China

Address before: 518126 3a01, building B, Hangcheng smart security technology park, Sanwei community, Hangcheng street, Bao'an District, Shenzhen, Guangdong

Applicant before: Shenzhen Dianke Intelligent Technology Co.,Ltd.

Country or region before: China

GR01 Patent grant
GR01 Patent grant