CN113270331A - Packaging method and packaging structure of semiconductor device - Google Patents
Packaging method and packaging structure of semiconductor device Download PDFInfo
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- CN113270331A CN113270331A CN202110517611.3A CN202110517611A CN113270331A CN 113270331 A CN113270331 A CN 113270331A CN 202110517611 A CN202110517611 A CN 202110517611A CN 113270331 A CN113270331 A CN 113270331A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 302
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 72
- 238000000034 method Methods 0.000 title claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 156
- 238000000465 moulding Methods 0.000 claims description 18
- 239000000126 substance Substances 0.000 claims description 5
- 230000000694 effects Effects 0.000 abstract description 30
- 238000004140 cleaning Methods 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 136
- HUWSZNZAROKDRZ-RRLWZMAJSA-N (3r,4r)-3-azaniumyl-5-[[(2s,3r)-1-[(2s)-2,3-dicarboxypyrrolidin-1-yl]-3-methyl-1-oxopentan-2-yl]amino]-5-oxo-4-sulfanylpentane-1-sulfonate Chemical compound OS(=O)(=O)CC[C@@H](N)[C@@H](S)C(=O)N[C@@H]([C@H](C)CC)C(=O)N1CCC(C(O)=O)[C@H]1C(O)=O HUWSZNZAROKDRZ-RRLWZMAJSA-N 0.000 description 11
- 238000005498 polishing Methods 0.000 description 9
- 230000017525 heat dissipation Effects 0.000 description 8
- 239000002184 metal Substances 0.000 description 6
- 239000000428 dust Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3185—Partial encapsulation or coating the coating covering also the sidewalls of the semiconductor body
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
The invention discloses a packaging method and a packaging structure of a semiconductor device. The packaging method of the semiconductor device comprises the following steps: providing a substrate; forming at least one semiconductor device on the surface of the substrate, wherein projections of different semiconductor devices on the substrate are separated by a preset distance without overlapping; forming a high-temperature-resistant film on the surface of the semiconductor device on the side away from the substrate, wherein the surface of the high-temperature-resistant film on the side away from the semiconductor device is flush; forming a plastic package body on the surface of one side of the high-temperature resistant film, which is far away from the semiconductor device, wherein the plastic package body covers the substrate; grinding the plastic package body until the high-temperature-resistant film is exposed, wherein the thickness of the plastic package body after grinding is a first preset thickness; and removing the high-temperature resistant film. The invention achieves the effects of no need of cleaning the die when the packaging is finished and reducing the consumption of the high-temperature resistant film.
Description
Technical Field
The embodiment of the invention relates to the technical field of semiconductors, in particular to a packaging method and a packaging structure of a semiconductor device.
Background
In order to enhance the performance of the semiconductor device such as heat dissipation, the semiconductor device needs to be exposed when the semiconductor device is packaged.
However, in the conventional package in which the semiconductor device is exposed, the high temperature resistant film is adhered to the inner side of the mold, and after each package is completed, the colloid for adhering the high temperature resistant film, which is remained in the cavity of the plastic package mold, needs to be cleaned, so that the mold cannot be used again if the mold is not cleaned completely, and a large amount of high temperature resistant film needs to be consumed if the high temperature resistant film is adhered to the inner side of the mold.
Disclosure of Invention
The invention provides a packaging method and a packaging structure of a semiconductor device, which are used for realizing that a mould does not need to be cleaned when packaging is finished and reducing the consumption of high-temperature resistant films.
In a first aspect, an embodiment of the present invention provides a method for packaging a semiconductor device, where the method for packaging a semiconductor device includes:
providing a substrate;
forming at least one semiconductor device on the surface of the substrate, wherein projections of different semiconductor devices on the substrate are separated by a preset distance without overlapping;
forming a high-temperature-resistant film on the surface of the semiconductor device on the side away from the substrate, wherein the surface of the high-temperature-resistant film on the side away from the semiconductor device is flush;
forming a plastic package body on the surface of one side, away from the semiconductor device, of the high-temperature resistant film, wherein the plastic package body covers the substrate;
grinding the plastic package body until the high-temperature-resistant film is exposed, wherein the thickness of the plastic package body after grinding is a first preset thickness;
and removing the high-temperature resistant film.
Optionally, before forming the plastic package body on the surface of the side of the high temperature resistant film facing away from the semiconductor device, the method further includes:
forming a conductive structure around the semiconductor device, wherein the conductive structure surrounds the semiconductor device, and the thickness of the conductive structure is greater than or equal to the first preset thickness;
forming a plastic package body on the surface of the high-temperature resistant film on the side away from the semiconductor device comprises the following steps:
and forming a plastic package body covering the conductive structure on the surface of one side of the high-temperature resistant film, which is far away from the semiconductor device.
Optionally, forming a conductive structure around the semiconductor device comprises:
forming a conductive structure comprising a conductive ring in projection on the substrate around the semiconductor device.
Optionally, forming a conductive structure around the semiconductor device comprises:
and forming a conductive structure comprising conductive columns arranged at intervals on the projection of the substrate around the semiconductor device.
Optionally, after removing the high temperature resistant film, the method further comprises:
forming an electromagnetic shielding layer on the surface of the plastic package body, which is far away from the substrate, wherein the projection of the electromagnetic shielding layer on the substrate covers the projection of at least one semiconductor device on the substrate, and the projection of the electromagnetic shielding layer on the substrate surrounds part or all of the projection of at least one semiconductor device on the substrate, or the projection of the electromagnetic shielding layer on the substrate surrounds part or all of the projection of at least one semiconductor device on the substrate.
Optionally, after removing the high temperature resistant film, the method further comprises:
forming an electromagnetic shielding layer on the surfaces of the plastic package body and the conductive structure, which are away from the substrate, wherein the projection of the electromagnetic shielding layer on the substrate covers the projection of at least one semiconductor device on the substrate, and the projection of the electromagnetic shielding layer on the substrate surrounds part or all of the projection of at least one semiconductor device on the substrate, or the projection of the electromagnetic shielding layer on the substrate surrounds part or all of the projection of at least one semiconductor device on the substrate.
Optionally, the forming a high temperature resistant film on a surface of the semiconductor device on a side facing away from the substrate includes:
forming a high-temperature-resistant film on the surface of the semiconductor device on the side away from the substrate, wherein the minimum thickness of the high-temperature-resistant film is a second preset thickness;
it is right high temperature resistant film carries out the attenuate processing, attenuate processing back high temperature resistant film's minimum thickness is the third and predetermines thickness, the third is predetermine thickness and is less than the second is predetermine thickness.
Optionally, the forming a high temperature resistant film on a surface of the semiconductor device on a side facing away from the substrate includes:
and forming a high-temperature-resistant film comprising a resistance temperature of more than or equal to 175 ℃ on the surface of the semiconductor device on the side facing away from the substrate.
Optionally, the grinding the plastic package body comprises:
and grinding the plastic package body by chemical mechanical grinding equipment.
In a second aspect, an embodiment of the present invention further provides a semiconductor device packaging structure, where the semiconductor device packaging structure is prepared by the semiconductor device packaging method according to any one of the first aspect.
The invention provides a substrate, at least one semiconductor device is formed on the surface of the substrate, the thicknesses of different semiconductor devices can be different, the projection of different semiconductor devices on the substrate is separated by a preset distance, a high-temperature-resistant film is formed on the surface of one side of each semiconductor device, which is far away from the substrate, a plastic package body is formed on the surface of one side of the high-temperature-resistant film, which is far away from the semiconductor device, the plastic package body is ground, the high-temperature-resistant film is exposed, the high-temperature-resistant film is removed, the semiconductor device is exposed, and the packaging of the exposed semiconductor device is realized. By directly forming the high-temperature-resistant film on the semiconductor device, the high-temperature-resistant film is not required to be formed at intervals of the semiconductor device, so that the using amount of the high-temperature-resistant film can be reduced, and the effect of saving cost is achieved. And the semiconductor devices with different thicknesses can be packaged without cleaning the die. The invention solves the problem that a large amount of films are needed to be consumed when the films are adhered to the inner side of the die, and achieves the effects that the die does not need to be cleaned when the packaging is finished and the using amount of the high-temperature resistant films is reduced.
Drawings
Fig. 1 is a flowchart of a method for packaging a semiconductor device according to an embodiment of the present invention;
fig. 2 is a flowchart of a packaging method of a semiconductor device according to a second embodiment of the present invention;
fig. 3 is a flowchart of a method for packaging a semiconductor device according to a third embodiment of the present invention;
fig. 4 is a flowchart of a packaging method of a semiconductor device according to a fourth embodiment of the present invention;
fig. 5 is a flowchart of a method for packaging a semiconductor device according to a fifth embodiment of the present invention;
fig. 6-11 are cross-sectional views corresponding to steps of a method for packaging a semiconductor device according to an embodiment of the invention;
fig. 12-15 are cross-sectional views corresponding to S240-S270 of a method for packaging a semiconductor device according to a second embodiment of the present invention;
fig. 16 is a cross-sectional view corresponding to the packaging method S370 for the semiconductor device according to the third embodiment of the present invention;
fig. 17 is a top view corresponding to the packaging method S370 for the semiconductor device according to the third embodiment of the present invention;
fig. 18 is a cross-sectional view of a semiconductor device packaging method S470 according to a fourth embodiment of the present invention;
fig. 19 is another cross-sectional view illustrating a packaging method of a semiconductor device according to a fourth embodiment of the present invention;
fig. 20 is a cross-sectional view of a semiconductor device packaging method S530 according to a fifth embodiment of the present invention;
fig. 21 is a cross-sectional view corresponding to a packaging method of a semiconductor device in the related art.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Example one
Fig. 1 is a flowchart of a method for packaging a semiconductor device according to an embodiment of the present invention, where the embodiment is applicable to a case of packaging a semiconductor device, and fig. 6 to 11 are cross-sectional views corresponding to steps of the method for packaging a semiconductor device according to an embodiment of the present invention. Referring to fig. 1, the method for packaging a semiconductor device specifically includes the following steps:
and S110, providing a substrate.
Referring to fig. 6, a substrate 10 is provided, wherein the substrate 10 may be, for example, a glass substrate, or may be another substrate, which is not limited herein. The substrate 10 has a supporting and fixing function, and provides a foundation for packaging the semiconductor device. Alternatively, the base plate 10 may be replaced with a frame.
And S120, forming at least one semiconductor device on the surface of the substrate, wherein the projections of different semiconductor devices on the substrate are separated by a preset distance and do not overlap.
Specifically, referring to fig. 7, at least one semiconductor device 20 is formed on the surface of the substrate 10, and the semiconductor device 20 may be, for example, a chip or another device, which is not limited herein. The thicknesses of the different semiconductor devices 20 may be different, the projections of the different semiconductor devices 20 on the substrate 10 are spaced by a preset distance, that is, the different semiconductor devices 20 are arranged at intervals of the preset distance, and the different semiconductor devices 20 do not overlap. Fig. 7 shows only the case where 3 semiconductor devices 20 are formed, and the number of semiconductor devices 20 is not limited in this embodiment.
And S130, forming a high-temperature-resistant film on the surface of the semiconductor device on the side away from the substrate, wherein the surface of the high-temperature-resistant film on the side away from the semiconductor device is flush.
Specifically, referring to fig. 8, a high temperature resistant film 30 is formed on a surface of each semiconductor device 20 on a side facing away from the substrate 10, and the high temperature resistant film 30 may achieve an effect of protecting the semiconductor device 20. By directly forming the high temperature resistant film 30 on the semiconductor device 20 and forming the high temperature resistant film 30 at different intervals of the semiconductor device 20, the amount of the high temperature resistant film 30 can be reduced, and the effect of saving cost can be achieved. And the surface of the high-temperature resistant film 30, which is away from one side of the semiconductor device, is flush, so that a flat surface can be provided for a subsequently formed film layer, and the process difficulty of the subsequently formed film layer is reduced.
And S140, forming a plastic package body on the surface of the side, away from the semiconductor device, of the high-temperature-resistant film, wherein the plastic package body covers the substrate.
Specifically, referring to fig. 9, a plastic package body 40 is formed on a surface of the high temperature resistant film 30 on a side away from the semiconductor device, the plastic package body 40 covers the substrate 10, and the plastic package body 40 wraps all the semiconductor devices 20 and the high temperature resistant film 30, so that the semiconductor devices 20 are easy to fix, dust can be blocked, an insulating effect can be achieved, the semiconductor devices 20 are protected from being damaged, and an effect of protecting and fixing the semiconductor devices 20 is achieved.
S150, grinding the plastic package body until the high-temperature-resistant film is exposed, wherein the thickness of the plastic package body after grinding is a first preset thickness.
Specifically, referring to fig. 10, the plastic package body 40 is polished to expose the high temperature resistant film 30, and when the plastic package body 40 is polished, a part of the high temperature resistant film 30 is also polished. After the grinding process, the thickness of the remaining plastic package body 40 is a first predetermined thickness H1, and the first predetermined thickness H1 is, for example, 2 micrometers greater than the thickness of the highest semiconductor device 20, or may be other thicknesses, which may be determined according to actual circumstances, and is not limited herein. By leaving the plastic package body 40 with the first predetermined thickness H1, it is ensured that the semiconductor device 20 is not ground, and the semiconductor device 20 is protected.
And S160, removing the high-temperature resistant film.
Specifically, referring to fig. 11, the refractory film 30 is removed, the residual refractory film 30 may be cleaned by etching, chemical cleaning, or other methods, and the method is not limited herein. After the high temperature resistant film 30 is removed, the semiconductor device 20 can be exposed, and the semiconductor device 20 can be packaged in an exposed mode. The exposure of the semiconductor device 20 may facilitate heat dissipation of the semiconductor device 20 and connection of the semiconductor device 20 to the outside.
Fig. 21 is a cross-sectional view corresponding to a packaging method of a semiconductor device in the related art, and referring to fig. 21, a substrate 101 is placed on a lower mold 102, a semiconductor device 103 is formed on the substrate 101, and a high temperature resistant film 104 is attached on an upper mold 105. In the prior art, the high temperature resistant film 104 is adhered to the upper mold 105, so that the high temperature resistant film 104 is adhered to the inner side of the whole upper mold 105, the high temperature resistant film 104 is also adhered to a position without the semiconductor device 103, the using amount of the high temperature resistant film 104 is increased, after packaging is finished, the high temperature resistant film 104 remained in the upper mold 105 needs to be cleaned, and if the cleaning is not clean, the reuse of the upper mold 105 is not facilitated.
Therefore, according to the technical scheme of the embodiment, the high temperature resistant film 30 is directly formed on the semiconductor device 20, so that the using amount of the high temperature resistant film 30 is reduced, and the mold does not need to be cleaned, so that the mold is convenient to reuse, and the packaging is more convenient.
According to the technical scheme of the embodiment, the substrate 10 is provided, at least one semiconductor device 20 is formed on the surface of the substrate 10, the thicknesses of different semiconductor devices 20 can be different, the projection of different semiconductor devices 20 on the substrate 10 is spaced by a preset distance, the high-temperature-resistant film 30 is formed on the surface of one side, away from the substrate 10, of each semiconductor device 20, the plastic package body 40 is formed on the surface of one side, away from the semiconductor device 20, of each high-temperature-resistant film 30, the plastic package body 40 is ground, the high-temperature-resistant film 30 is exposed, the high-temperature-resistant film 30 is removed, the semiconductor device 20 is exposed, and the semiconductor device 20 is packaged. By directly forming the high temperature resistant film 30 on the semiconductor device 20, the high temperature resistant film 30 is not required to be formed at intervals of the semiconductor device 20, the use amount of the high temperature resistant film 30 can be reduced, and the effect of saving cost is achieved. And the semiconductor device 20 with different thickness can be packaged without cleaning the die. The technical scheme of this embodiment has solved and has pasted the film at the mould inboard, need consume the problem of a large amount of films, has reached and need not wash the mould when the encapsulation is accomplished, reduces the effect of high temperature resistant film quantity.
On the basis of the foregoing technical solution, optionally, the forming of the high temperature resistant film on the surface of the semiconductor device facing away from the substrate in S130 includes:
and forming a high-temperature-resistant film comprising a resistance temperature of 175 ℃ or higher on the surface of the semiconductor device on the side away from the substrate.
Specifically, the high temperature resistant film 30 has a temperature resistance of 175 ℃ or higher, which ensures that the high temperature resistant film 30 is not melted when the molding compound 40 is formed, thereby protecting the semiconductor device 20 from high temperature. The temperature of the high temperature resistant film 30 may be other temperatures, and the high temperature resistant film 30 may be selected according to actual conditions, which is not limited herein.
On the basis of the foregoing technical solution, optionally, the grinding process performed on the plastic package body in S150 includes:
and grinding the plastic package body by chemical mechanical grinding equipment.
Specifically, the plastic package body 40 is polished by a Chemical Mechanical Polishing (CMP) device, which has the characteristics of high polishing precision and convenient operation, and the thickness of the polished plastic package body 40 is conveniently controlled, so as to avoid polishing the semiconductor device 20, thereby achieving the effect of protecting the semiconductor device 20.
Example two
On the basis of the foregoing embodiment, this embodiment is to further refine S140 in the foregoing embodiment, fig. 12 to fig. 15 are cross-sectional views corresponding to S240 to S270 of a packaging method of a semiconductor device provided by a second embodiment of the present invention, fig. 2 is a flowchart of the packaging method of the semiconductor device provided by the second embodiment of the present invention, this embodiment is applicable to the case of packaging the semiconductor device, and referring to fig. 2, the packaging method of the semiconductor device specifically includes the following steps:
s210, providing a substrate.
With continued reference to fig. 6, a substrate 10 is provided.
And S220, forming at least one semiconductor device on the surface of the substrate, wherein the projections of different semiconductor devices on the substrate are separated by a preset distance and do not overlap.
With continued reference to fig. 7, at least one semiconductor device 20 is formed on the surface of the substrate 10.
And S230, forming a high-temperature-resistant film on the surface of the semiconductor device on the side away from the substrate, wherein the surface of the high-temperature-resistant film on the side away from the semiconductor device is flush.
With continued reference to fig. 8, a refractory film 30 is formed on the surface of the semiconductor device 20 on the side facing away from the substrate 10.
And S240, forming a conductive structure around the semiconductor device, wherein the conductive structure surrounds the semiconductor device, and the thickness of the conductive structure is greater than or equal to a first preset thickness.
Specifically, referring to fig. 12, a conductive structure 50 is formed around the semiconductor device 20, and the conductive structure 50 may be, for example, a metal pillar, which may be a cylindrical metal pillar or a rectangular metal pillar, and is not limited herein. The conductive structure 50 may also be other structures, such as a metal ring, etc., and is not limited herein. The conductive structure 50 surrounds the semiconductor device 20, and the conductive structure 50 can transfer heat of the substrate 10 to a surface of the conductive structure 50 facing away from the substrate 10, so as to enhance the heat dissipation effect of the substrate 10.
And S250, forming a plastic package body covering the conductive structure on the surface of the side, away from the semiconductor device, of the high-temperature resistant film.
Specifically, referring to fig. 13, a molding compound 40 is formed on a surface of the high temperature resistant film 30 on a side away from the semiconductor device 20, and the molding compound 40 covers the conductive structure 50 and the semiconductor device 20, so that the semiconductor device 20 and the conductive structure 50 are protected, and the subsequent mounting and use of the semiconductor device 20 are facilitated.
And S260, grinding the plastic package body until the high-temperature-resistant film is exposed, wherein the thickness of the plastic package body after grinding is a first preset thickness.
Specifically, referring to fig. 14, the plastic package body 40 is ground until the high temperature resistant film 30 is exposed, and the thickness of the plastic package body 40 after the grinding process is the first predetermined thickness H1. The thickness of the conductor structure 50 is greater than or equal to the first predetermined thickness H1, which helps dissipate heat of the plastic package body 40 with the same thickness as the first predetermined thickness H1 as quickly as possible.
And S270, removing the high-temperature resistant film.
Referring to fig. 15, the refractory film 30 is removed.
On the basis of the above embodiments, in the technical solution of this embodiment, the conductive structure 50 is formed around the semiconductor device 20, the conductive structure 50 surrounds the semiconductor device 20, and the conductive structure 50 can transfer heat of the substrate 10 to a surface of the conductive structure 50 away from the substrate 10, thereby enhancing a heat dissipation effect of the substrate 10. And a plastic package body 40 is formed on the surface of the high temperature resistant film 30 on the side away from the semiconductor device 20, and the plastic package body 40 covers the conductive structure 50 and the semiconductor device 20, so that the effect of protecting the semiconductor device 20 and the conductive structure 50 is achieved.
On the basis of the foregoing embodiment, optionally, the forming of the conductive structure around the semiconductor device at S240 includes:
a conductive structure including a conductive ring in projection on a substrate is formed around the semiconductor device.
Specifically, the conductive structure 50 formed around the semiconductor device 20 includes a structure projected on the substrate 10 as a conductive ring, such as a metal ring, the conductive ring may surround the semiconductor device 20, and the conductive ring may transfer heat of the substrate 10 to a surface of the conductive ring facing away from the substrate 10, so as to enhance a heat dissipation effect of the substrate 10.
On the basis of the foregoing embodiment, optionally, the forming of the conductive structure around the semiconductor device at S240 includes:
a conductive structure including conductive posts disposed at intervals in projection on a substrate is formed around the semiconductor device.
Specifically, the conductive structure 50 formed around the semiconductor device 20 includes a conductive pillar, which may be, for example, a metal pillar, the conductive pillar surrounds the semiconductor device 20, and the conductive pillar may transfer heat of the substrate 10 to a surface of the conductive pillar, which is away from the substrate 10, so as to enhance a heat dissipation effect of the substrate 10 on the basis of saving materials of the conductive structure 50 and ensuring a packaging effect of the plastic package body 40.
EXAMPLE III
On the basis of the foregoing embodiment, fig. 16 is a cross-sectional view corresponding to a packaging method S370 for a semiconductor device provided in a third embodiment, fig. 17 is a top view corresponding to the packaging method S370 for the semiconductor device provided in the third embodiment, fig. 3 is a flowchart of the packaging method for the semiconductor device provided in the third embodiment of the present invention, the third embodiment is applicable to the packaging situation of the semiconductor device, and referring to fig. 3, the packaging method for the semiconductor device specifically includes the following steps:
s310, providing a substrate.
With continued reference to fig. 6, a substrate 10 is provided.
And S320, forming at least one semiconductor device on the surface of the substrate, wherein the projections of different semiconductor devices on the substrate are separated by a preset distance and do not overlap.
With continued reference to fig. 7, at least one semiconductor device 20 is formed on the surface of the substrate 10.
S330, forming a high-temperature-resistant film on the surface of the semiconductor device on the side away from the substrate, wherein the surface of the high-temperature-resistant film on the side away from the semiconductor device is flush.
With continued reference to fig. 8, a refractory film 30 is formed on the surface of the semiconductor device 20 on the side facing away from the substrate 10.
And S340, forming a plastic package body on the surface of the side, away from the semiconductor device, of the high-temperature resistant film, wherein the plastic package body covers the substrate.
With continued reference to fig. 9, a molding compound 40 is formed on the surface of the high temperature resistant film 30 on the side away from the semiconductor device 20, and the molding compound 40 covers the substrate 10.
And S350, grinding the plastic package body until the high-temperature-resistant film is exposed, wherein the thickness of the plastic package body after grinding is a first preset thickness.
With continued reference to fig. 10, the molding compound 40 is ground until the refractory film 30 is exposed.
And S360, removing the high-temperature resistant film.
With continued reference to fig. 11, the refractory film 30 is removed.
And S370, forming an electromagnetic shielding layer on the surface of the plastic package body, which is far away from the substrate, wherein the projection of the electromagnetic shielding layer on the substrate covers the projection of at least one semiconductor device on the substrate, and the projection of the electromagnetic shielding layer on the substrate surrounds part or all of the projection of at least one semiconductor device on the substrate, or the projection of the electromagnetic shielding layer on the substrate surrounds part or all of the projection of at least one semiconductor device on the substrate.
Specifically, referring to fig. 16, an electromagnetic shielding layer 60 is formed on the surface of the plastic package body 40 away from the substrate, and the electromagnetic shielding layer 60 has an electromagnetic shielding function, so that the semiconductor device 20 can be prevented from being subjected to surrounding electromagnetic interference, and an effect of further protecting the semiconductor device 20 is achieved. The electromagnetic shielding layer 60 may selectively cover the semiconductor device 20, or may selectively shield one side of the semiconductor device 20, and fig. 16 illustrates only one case where the electromagnetic shielding layer 60 covers the semiconductor device 20, but is not limited thereto. It is necessary for the antenna or the like to transmit and receive signals to the outside, so the electromagnetic shielding layer 60 does not need to cover the antenna or the like. Referring to fig. 17, fig. 17 shows only one case where the electromagnetic shielding layer 60 covers only the molding body 40 surrounding the semiconductor device 20, but is not limited thereto.
On the basis of the above embodiment, in the technical solution of this embodiment, the electromagnetic shielding layer 60 is formed on the surface of the plastic package body 40 away from the substrate, and the electromagnetic shielding layer 60 has an electromagnetic shielding function, so that the semiconductor device 20 can be prevented from being subjected to surrounding electromagnetic interference, and an effect of further protecting the semiconductor device 20 is achieved.
Example four
On the basis of the foregoing embodiment, fig. 4 is a flowchart of a packaging method of a semiconductor device according to a fourth embodiment of the present invention, where this embodiment is applicable to the case of packaging a semiconductor device, and referring to fig. 4, the packaging method of a semiconductor device specifically includes the following steps:
s410, providing a substrate.
With continued reference to fig. 6, a substrate 10 is provided.
And S420, forming at least one semiconductor device on the surface of the substrate, wherein the projections of different semiconductor devices on the substrate are separated by a preset distance and do not overlap.
With continued reference to fig. 7, at least one semiconductor device 20 is formed on the surface of the substrate 10.
And S430, forming a high-temperature-resistant film on the surface of the semiconductor device on the side away from the substrate, wherein the surface of the high-temperature-resistant film on the side away from the semiconductor device is flush.
With continued reference to fig. 8, a refractory film 30 is formed on the surface of the semiconductor device 20 on the side facing away from the substrate 10.
And S440, forming a conductive structure around the semiconductor device, wherein the conductive structure surrounds the semiconductor device, and the thickness of the conductive structure is greater than or equal to a first preset thickness.
With continued reference to fig. 12, a conductive structure 50 is formed around the semiconductor device 20.
S450, forming a plastic package body covering the conductive structure on the surface of the side, away from the semiconductor device, of the high-temperature-resistant film.
With continued reference to fig. 13, a molding compound 40 is formed on the surface of the refractory film 30 on the side facing away from the semiconductor device 20, and the molding compound 40 covers the conductive structure 50 and the semiconductor device 20.
And S460, grinding the plastic package body until the high-temperature-resistant film is exposed, wherein the thickness of the plastic package body after grinding is a first preset thickness.
With reference to fig. 14, the plastic package body 40 is ground until the high temperature resistant film 30 is exposed, and the thickness of the plastic package body 40 after the grinding process is the first predetermined thickness.
And S470, removing the high-temperature resistant film.
With continued reference to fig. 15, the refractory film 30 is removed.
And S480, forming an electromagnetic shielding layer on the surface of the plastic package body and the surface of the conductive structure, which is far away from the substrate, wherein the projection of the electromagnetic shielding layer on the substrate covers the projection of at least one semiconductor device on the substrate, and the projection of the electromagnetic shielding layer on the substrate surrounds part or all of the projection of the at least one semiconductor device on the substrate, or the projection of the electromagnetic shielding layer on the substrate surrounds part or all of the projection of the at least one semiconductor device on the substrate.
Specifically, referring to fig. 18, an electromagnetic shielding layer 60 is formed on the surface of the plastic package body 40 and the surface of the conductive structure 50 away from the substrate 10, and the electromagnetic shielding layer 60 has an electromagnetic shielding function, so that the semiconductor device 20 can be prevented from being interfered by surrounding electromagnetic waves, and an effect of further protecting the semiconductor device 20 is achieved. The electromagnetic shielding layer 60 may selectively cover the semiconductor device 20, or may selectively shield one side of the semiconductor device 20, and fig. 18 shows only one case where the electromagnetic shielding layer 60 covers the semiconductor device 20, but is not limited thereto. An electromagnetic shielding layer 60 is formed on the surface of the plastic package body 40 and the surface of the conductive structure 50 away from the substrate 10, and the electromagnetic shielding layer 60 is electrically connected with the conductive structure 50, so as to facilitate the conduction of the electrostatic charge of the conductive structure 50.
Alternatively, fig. 19 is another cross-sectional view corresponding to the packaging method of the semiconductor device according to the fourth embodiment, and referring to fig. 19, an antenna 70 may be formed on the surface of the plastic package body 40 and the conductive structure 50 away from the substrate 10, and the electromagnetic shielding layer 60 is not required to be disposed. The exposed portions of conductive structure 50 and semiconductor device 20 may serve as pads for antenna 70, and antenna 70 may be soldered to conductive structure 50 and semiconductor device 20.
On the basis of the above embodiment, in the technical solution of this embodiment, by providing the electromagnetic shielding layer 60, the electromagnetic shielding layer 60 has an electromagnetic shielding effect, so that the semiconductor device 20 can be prevented from being subjected to surrounding electromagnetic interference, and an effect of further protecting the semiconductor device 20 is achieved.
EXAMPLE five
On the basis of the foregoing embodiment, this embodiment is to further refine S130 in the foregoing embodiment, fig. 20 is a cross-sectional view corresponding to S530 of a method for packaging a semiconductor device provided in a fifth embodiment of the present invention, fig. 5 is a flowchart of a method for packaging a semiconductor device provided in a fifth embodiment of the present invention, and this embodiment is applicable to a case of packaging a semiconductor device, referring to fig. 5, the method for packaging a semiconductor device specifically includes the following steps:
s510, providing a substrate.
With continued reference to fig. 6, a substrate 10 is provided.
S520, forming at least one semiconductor device on the surface of the substrate, wherein the projections of different semiconductor devices on the substrate are separated by a preset distance and do not overlap.
With continued reference to fig. 7, at least one semiconductor device 20 is formed on the surface of the substrate 10.
And S530, forming a high-temperature-resistant film on the surface of the side, away from the substrate, of the semiconductor device, wherein the minimum thickness of the high-temperature-resistant film is a second preset thickness.
Specifically, referring to fig. 20, the high temperature resistant film 30 is formed on the surface of the semiconductor device 20 on the side away from the substrate 10, and the thicknesses of the high temperature resistant films 30 formed on different semiconductor devices 20 may be different, for example, the thickness of the high temperature resistant film 30 on the semiconductor device 20 with a larger thickness may be smaller, so as to further reduce the usage amount of the high temperature resistant film 30 and achieve the effect of saving cost. However, to ensure that the minimum thickness of the refractory film 30 is the second predetermined thickness H2, the second predetermined thickness H2 may be determined according to the polishing precision of the polishing machine, and the second predetermined thickness H2 should be slightly larger than the polishing precision of the polishing machine to prevent damage to the semiconductor device 20 during polishing.
And S540, thinning the high-temperature-resistant film, wherein the minimum thickness of the thinned high-temperature-resistant film is a third preset thickness, and the third preset thickness is smaller than the second preset thickness.
Specifically, with continued reference to fig. 8, the high temperature resistant film 30 is thinned, for example, by grinding, so that the surface of the high temperature resistant film 30 facing away from the semiconductor device 20 is flush, and the surface of the high temperature resistant film 30 facing away from the semiconductor device 20 is flush, so as to provide a flat surface for a subsequently formed film layer, thereby reducing the process difficulty of the subsequently formed film layer, and facilitating the next operation. After the thinning process, the minimum thickness of the refractory thin film 30 is a third predetermined thickness H3, and the third predetermined thickness H3 is, for example, 2 μm, or other thicknesses, which are not limited herein, so as to avoid damaging the semiconductor device 20 during the thinning process. An effect of further protecting the semiconductor device 20 is achieved.
And S550, forming a plastic package body on the surface of the side, away from the semiconductor device, of the high-temperature-resistant film, wherein the plastic package body covers the substrate.
With continued reference to fig. 9, a molding compound 40 is formed on the surface of the high temperature resistant film 30 on the side away from the semiconductor device 20, and the molding compound 40 covers the substrate 10.
And S560, grinding the plastic package body until the high-temperature-resistant film is exposed, wherein the thickness of the plastic package body after grinding is a first preset thickness.
With continued reference to fig. 10, the molding compound 40 is ground until the refractory film 30 is exposed.
And S570, removing the high-temperature resistant film.
With continued reference to fig. 11, the refractory film 30 is removed.
On the basis of the foregoing embodiment, in the technical solution of this embodiment, the high temperature resistant film 30 is formed on the surface of the semiconductor device 20 on the side away from the substrate 10, the thicknesses of the high temperature resistant films 30 formed on different semiconductor devices 20 may be different, for example, the thickness of the high temperature resistant film 30 on the semiconductor device 20 with a larger thickness may be smaller, so as to further reduce the usage amount of the high temperature resistant film 30, and achieve the effect of saving cost. However, the minimum thickness of the refractory thin film 30 is ensured to be the second predetermined thickness to prevent damage to the semiconductor device 20 during polishing. Then, the high temperature resistant film 30 is thinned so that the surface of the high temperature resistant film 30 facing away from the semiconductor device 20 is flush. And after the thinning treatment, the minimum thickness of the high-temperature resistant film 30 is the third preset thickness, so that the semiconductor device 20 can be prevented from being damaged when the thickness of the high-temperature resistant film 30 is thinned, and the effect of further protecting the semiconductor device 20 is achieved. Through twice thinning processing of the thickness of the high-temperature film 30, the high-temperature-resistant film 30 is completely removed after the plastic package body 40 is formed, so that the semiconductor device 20 can be prevented from being damaged when the thickness of the high-temperature film 30 is thinned, and the effect of further protecting the semiconductor device 20 is achieved.
EXAMPLE six
The embodiment provides a semiconductor device packaging structure, and the semiconductor device packaging structure is prepared by the semiconductor device packaging method in any embodiment.
Specifically, fig. 11 shows one case of a semiconductor device package structure, and referring to fig. 11, the semiconductor device package structure includes a substrate 10, at least one semiconductor device 20, and a molding body 40. And the semiconductor device 20 is exposed, heat dissipation of the semiconductor device 20 can be facilitated, and connection of the semiconductor device 20 to the outside can be facilitated. The plastic package body 40 wraps all the semiconductor devices 20 and the high temperature resistant film 30, so that the semiconductor devices 20 are easy to fix, dust can be blocked, an insulating effect can be achieved, the semiconductor devices 20 are protected from being damaged, and the effect of protecting and fixing the semiconductor devices 20 is achieved.
Fig. 15 shows another case of a semiconductor device package structure, and referring to fig. 15, the semiconductor device package structure includes a substrate 10, at least one semiconductor device 20, a molding body 40, and a conductive structure 50. The conductive structure 50 surrounds the semiconductor device 20, and the conductive structure 50 can transfer heat of the substrate 10 to a surface of the conductive structure 50 facing away from the substrate 10, so as to enhance the heat dissipation effect of the substrate 10.
Fig. 16 shows another case of a semiconductor device package structure, and referring to fig. 16, the semiconductor device package structure includes a substrate 10, at least one semiconductor device 20, a molding body 40, and an electromagnetic shielding layer 60. The electromagnetic shielding layer 60 has an electromagnetic shielding function, and can prevent the semiconductor device 20 from being subjected to surrounding electromagnetic interference, thereby achieving an effect of further protecting the semiconductor device 20. The electromagnetic shield layer 60 may selectively cover the semiconductor device 20, or may selectively shield one side of the semiconductor device 20.
Fig. 18 shows another case of a semiconductor device package structure, and referring to fig. 18, the semiconductor device package structure includes a substrate 10, at least one semiconductor device 20, a molding body 40, a conductive structure 50, and an electromagnetic shielding layer 60.
Fig. 19 shows another case of a semiconductor device package structure, and referring to fig. 19, the semiconductor device package structure includes a substrate 10, at least one semiconductor device 20, a molding body 40, a conductive structure 50, and an antenna 70. The exposed portions of conductive structure 50 and semiconductor device 20 may serve as pads for antenna 70, and antenna 70 may be soldered to conductive structure 50 and semiconductor device 20.
The semiconductor device package structure may also include other devices or other layers, which are not limited herein.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (10)
1. A method of packaging a semiconductor device, comprising:
providing a substrate;
forming at least one semiconductor device on the surface of the substrate, wherein projections of different semiconductor devices on the substrate are separated by a preset distance without overlapping;
forming a high-temperature-resistant film on the surface of the semiconductor device on the side away from the substrate, wherein the surface of the high-temperature-resistant film on the side away from the semiconductor device is flush;
forming a plastic package body on the surface of one side, away from the semiconductor device, of the high-temperature resistant film, wherein the plastic package body covers the substrate;
grinding the plastic package body until the high-temperature-resistant film is exposed, wherein the thickness of the plastic package body after grinding is a first preset thickness;
and removing the high-temperature resistant film.
2. The method for packaging a semiconductor device according to claim 1, further comprising, before forming a molding body on a surface of the high temperature resistant film on a side facing away from the semiconductor device:
forming a conductive structure around the semiconductor device, wherein the conductive structure surrounds the semiconductor device, and the thickness of the conductive structure is greater than or equal to the first preset thickness;
forming a plastic package body on the surface of the high-temperature resistant film on the side away from the semiconductor device comprises the following steps:
and forming a plastic package body covering the conductive structure on the surface of one side of the high-temperature resistant film, which is far away from the semiconductor device.
3. The method of packaging a semiconductor device according to claim 2, wherein forming a conductive structure around the semiconductor device comprises:
forming a conductive structure comprising a conductive ring in projection on the substrate around the semiconductor device.
4. The method of packaging a semiconductor device according to claim 2, wherein forming a conductive structure around the semiconductor device comprises:
and forming a conductive structure comprising conductive columns arranged at intervals on the projection of the substrate around the semiconductor device.
5. The method for packaging a semiconductor device according to claim 1, further comprising, after removing the high temperature resistant film:
forming an electromagnetic shielding layer on the surface of the plastic package body, which is far away from the substrate, wherein the projection of the electromagnetic shielding layer on the substrate covers the projection of at least one semiconductor device on the substrate, and the projection of the electromagnetic shielding layer on the substrate surrounds part or all of the projection of at least one semiconductor device on the substrate, or the projection of the electromagnetic shielding layer on the substrate surrounds part or all of the projection of at least one semiconductor device on the substrate.
6. The method for packaging a semiconductor device according to claim 2, further comprising, after removing the high temperature resistant film:
forming an electromagnetic shielding layer on the surfaces of the plastic package body and the conductive structure, which are away from the substrate, wherein the projection of the electromagnetic shielding layer on the substrate covers the projection of at least one semiconductor device on the substrate, and the projection of the electromagnetic shielding layer on the substrate surrounds part or all of the projection of at least one semiconductor device on the substrate, or the projection of the electromagnetic shielding layer on the substrate surrounds part or all of the projection of at least one semiconductor device on the substrate.
7. The method for packaging a semiconductor device according to claim 1, wherein forming a high-temperature-resistant film on a surface of the semiconductor device on a side facing away from the substrate comprises:
forming a high-temperature-resistant film on the surface of the semiconductor device on the side away from the substrate, wherein the minimum thickness of the high-temperature-resistant film is a second preset thickness;
it is right high temperature resistant film carries out the attenuate processing, attenuate processing back high temperature resistant film's minimum thickness is the third and predetermines thickness, the third is predetermine thickness and is less than the second is predetermine thickness.
8. The method for packaging a semiconductor device according to claim 1, wherein forming a high-temperature-resistant film on a surface of the semiconductor device on a side facing away from the substrate comprises:
and forming a high-temperature-resistant film comprising a resistance temperature of more than or equal to 175 ℃ on the surface of the semiconductor device on the side facing away from the substrate.
9. The method for packaging a semiconductor device according to claim 1, wherein the grinding process for the plastic package body comprises:
and grinding the plastic package body by chemical mechanical grinding equipment.
10. A semiconductor device package structure prepared by the method for packaging a semiconductor device according to any one of claims 1 to 9.
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