CN113228495B - Electrostatic chuck device - Google Patents
Electrostatic chuck device Download PDFInfo
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- CN113228495B CN113228495B CN201980086522.9A CN201980086522A CN113228495B CN 113228495 B CN113228495 B CN 113228495B CN 201980086522 A CN201980086522 A CN 201980086522A CN 113228495 B CN113228495 B CN 113228495B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Mechanical Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
本发明的静电卡盘装置(1)具备：多个内部电极(20)；绝缘性有机膜(40)，设置于内部电极(20)的厚度方向上的两面侧；以及陶瓷层(60)，隔着中间层(50)层叠于至少包括内部电极(20)和绝缘性有机膜(40)的层叠体(2)的厚度方向上的上表面(2a)。
The electrostatic chuck device (1) of the present invention comprises: a plurality of internal electrodes (20); an insulating organic film (40) arranged on both sides of the internal electrode (20) in the thickness direction; and a ceramic layer (60) stacked via an intermediate layer (50) on the upper surface (2a) in the thickness direction of a stack (2) including at least the internal electrode (20) and the insulating organic film (40).
Description
Technical Field
The present invention relates to an electrostatic chuck apparatus.
Background
When manufacturing a semiconductor integrated circuit using a semiconductor wafer or when manufacturing a liquid crystal panel using an insulating substrate such as a glass substrate or a film, it is necessary to hold a base material such as a semiconductor wafer, a glass substrate, or an insulating substrate in a predetermined position by suction. For this reason, mechanical chucks, vacuum chucks, and the like are used for suction holding these substrates by a mechanical method. However, these holding methods have problems such as difficulty in uniformly holding the substrate (adsorbate), inability to use in vacuum, excessive temperature rise on the sample surface, and the like. Accordingly, in recent years, an electrostatic chuck device capable of solving these problems has been used for holding the adsorbate.
The electrostatic chuck device includes a conductive support member serving as an internal electrode, and a dielectric layer made of a dielectric material covering the conductive support member as a main portion. The adsorbate may be adsorbed by the main portion. When a voltage is applied to an internal electrode in the electrostatic chuck device to generate a potential difference between the adsorbate and the conductive support member, electrostatic attraction force is generated between the dielectric layers. Thus, the adsorbate is supported substantially flat with respect to the conductive support member.
As a conventional electrostatic chuck device, an electrostatic chuck device is known in which an insulating organic film is laminated on an internal electrode to form a dielectric layer (for example, refer to patent document 1). In addition, an electrostatic chuck device is known in which a ceramic is sputtered onto an internal electrode to form a dielectric layer (see, for example, patent document 2). In addition, an electrostatic chuck device is known in which a ceramic layer is formed by spraying a ceramic onto an insulating organic film laminated on an internal electrode (for example, refer to patent document 3).
Prior art literature
Patent literature
Patent document 1 Japanese patent application laid-open No. 2004-235563
Patent document 2 Japanese examined patent publication No. 6-36583
Patent document 3 Japanese patent No. 5054022
Disclosure of Invention
Technical problem to be solved by the invention
The electrostatic chuck device described in patent document 1 has excellent adsorption force for adsorbing the adsorbate by utilizing coulomb force generated by a dielectric layer made of an insulating organic film provided on the internal electrode. However, the electrostatic chuck apparatus has problems of low resistance in a plasma environment used in a dry etching apparatus and short product life.
In addition, an electrostatic chuck device having a dielectric layer formed by sputtering a ceramic on an internal electrode as described in patent document 2 has plasma resistance. However, since there are voids between ceramic particles, it is difficult to obtain stable insulation, and it is necessary to thicken the dielectric layer in order to secure insulation. Therefore, as an electrostatic chuck device that adsorbs an adsorbate by coulomb force, there is a technical problem that it is difficult to obtain high adsorption force.
In addition, in the electrostatic chuck device having a ceramic layer formed by sputtering ceramic on an insulating organic film laminated on an internal electrode as described in patent document 3, since the ceramic layer is formed by sputtering on the insulating organic film, it is necessary to form irregularities on the insulating organic film. However, by forming such irregularities and ceramic spraying, the insulating properties of the insulating organic film are reduced, and when used as an electrostatic chuck device, the ceramic layer needs to have a thickness of at least 100 μm. In addition, when the ceramic is sprayed onto the insulating organic film, the end portion of the insulating organic film cannot be covered with the ceramic layer. When the end portion of the insulating organic film is exposed, the plasma resistance of the electrostatic chuck apparatus is reduced.
The present invention has been made in view of the above circumstances, and an object thereof is to provide an electrostatic chuck device having excellent plasma resistance and voltage resistance and also excellent adsorptivity.
Technical scheme for solving problems
The present invention has the following aspects.
[1] An electrostatic chuck device is characterized by comprising a plurality of internal electrodes, insulating organic films provided on both sides in the thickness direction of the internal electrodes, and ceramic layers laminated on the upper surface in the thickness direction of a laminate including at least the internal electrodes and the insulating organic films with an intermediate layer interposed therebetween.
[2] The electrostatic chuck apparatus according to [1], wherein the ceramic layer covers the entire outer surface of the laminate via the intermediate layer.
[3] The electrostatic chuck device according to [1] or [2], wherein the ceramic layer has a base layer and a surface layer formed on an upper surface of the base layer and having irregularities.
[4] The electrostatic chuck device according to any one of [1] to [3], wherein the intermediate layer comprises at least one of an organic insulating resin and an inorganic insulating resin, and at least one of an inorganic filler and a fibrous filler.
[5] The electrostatic chuck apparatus according to [4], wherein the inorganic filler is at least one of spherical powder and irregular powder.
[6] The electrostatic chuck apparatus according to [5], wherein the spherical powder and the irregular powder are at least one selected from the group consisting of alumina, silica, and yttria.
[7] The electrostatic chuck apparatus according to any one of [4] to [6], wherein the fibrous filler is at least one selected from the group consisting of plant fibers, inorganic fibers, and fibrillated organic resins.
[8] The electrostatic chuck apparatus according to any one of [1] to [7], wherein the insulating organic film is a polyimide film.
[9] The electrostatic chuck device according to any one of [1] to [8], wherein the insulating organic film is composed of a first insulating organic film provided on a lower surface side in a thickness direction of the internal electrode and a second insulating organic film provided on an upper surface side in the thickness direction of the internal electrode, a first adhesive layer is provided on a surface of the first insulating organic film opposite to the internal electrode, and a second adhesive layer is provided between the first insulating organic film and the internal electrode and the second insulating organic film provided on the upper surface side in the thickness direction of the first insulating organic film, and a total thickness of the first adhesive layer, the thickness of the first insulating organic film, the thickness of the internal electrode, the thickness of the second adhesive layer, the thickness of the second insulating organic film, the thickness of the intermediate layer, and the thickness of the ceramic layer is 200 μm or less.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present invention, an electrostatic chuck device having excellent plasma resistance and voltage resistance and also excellent adsorptivity can be provided.
Drawings
Fig. 1 is a sectional view taken along the height direction of an electrostatic chuck apparatus showing the schematic structure of the electrostatic chuck apparatus of the present invention.
Detailed Description
Next, an electrostatic chuck device to which the embodiment of the present invention is applied will be described. In the drawings used in the following description, the dimensional ratios of the components and the like are not necessarily the same as those of the actual ones.
The present embodiment is a specific description for better understanding of the gist of the present invention, and the present invention is not limited to the specific description unless specified.
[ Electrostatic chuck device ]
Fig. 1 is a cross-sectional view taken along the height direction of an electrostatic chuck device according to the present embodiment, showing the schematic configuration of the electrostatic chuck device.
As shown in fig. 1, the electrostatic chuck device 1 of the present embodiment includes a substrate 10, a plurality of internal electrodes 20, an adhesive layer 30, an insulating organic film 40, an intermediate layer 50, and a ceramic layer 60. Specifically, as shown in FIG. 1, the electrostatic chuck device 1 of the present embodiment includes a substrate 10, a first internal electrode 21, a second internal electrode 22, a first adhesive layer 31, a second adhesive layer 32, a first insulating organic film 41, a second insulating organic film 42, an intermediate layer 50, and a ceramic layer 60.
In the electrostatic chuck apparatus 1 of the present embodiment, the first adhesive layer 31, the first insulating organic film 41, the first and second internal electrodes 21 and 22, the second adhesive layer 32, the second insulating organic film 42, the intermediate layer 50, and the ceramic layer 60 are sequentially laminated on the surface 10a of the substrate 10 (upper surface in the thickness direction of the substrate 10).
Insulating organic films 40 are provided on both surfaces (upper surface 20a in the thickness direction of the internal electrode 20, lower surface 20b in the thickness direction of the internal electrode 20) side in the thickness direction of the internal electrode 20. Specifically, the second insulating organic film 42 is provided on the upper surface 21a side in the thickness direction of the first internal electrode 21 and the upper surface 22a side in the thickness direction of the second internal electrode 22. In addition, a first insulating organic film 41 is provided on the lower surface 21b side in the thickness direction of the first internal electrode 21 and the lower surface 22b side in the thickness direction of the second internal electrode 22.
The first adhesive layer 31 is provided on the surface of the first insulating organic film 41 on the opposite side of the internal electrode 20 (the lower surface 41b of the first insulating organic film 41). The second adhesive layer 32 is provided between the first insulating organic film 41 and the second insulating organic film 42 and the internal electrode 20 provided on the upper surface 41a of the first insulating organic film 41 in the thickness direction.
The total thickness (hereinafter referred to as "total thickness (1)") of the thickness of the first adhesive layer 31, the thickness of the first insulating organic film 41, the thickness of the internal electrode 20, the thickness of the second adhesive layer 32, the thickness of the second insulating organic film 42, the thickness of the intermediate layer 50, and the thickness of the ceramic layer 60 (ceramic base layer 61, ceramic surface layer 62) is preferably 200 μm or less, more preferably 170 μm or less. When the total thickness (1) is 200 μm or less, the electrostatic chuck apparatus 1 is excellent in voltage resistance and plasma resistance, and as a result, the adsorption force is excellent.
The total of the thickness of the first adhesive layer 31, the thickness of the first insulating organic film 41, the thickness of the internal electrode 20, the thickness of the second adhesive layer 32, and the thickness of the second insulating organic film 42 (hereinafter referred to as "total thickness (2)") is preferably 110 μm or less, more preferably 90 μm or less. When the total thickness (2) is 110 μm or less, the electrostatic chuck apparatus 1 is excellent in voltage resistance and plasma resistance, and as a result, the adsorption force is excellent.
The sum of the thickness of the second adhesive layer 32 and the thickness of the second insulating organic film 42 (hereinafter referred to as "total thickness (3)") is preferably 50 μm or less, more preferably 40 μm or less. When the total thickness (2) is 50 μm or less, the electrostatic chuck apparatus 1 is excellent in voltage resistance and plasma resistance, and as a result, the adsorption force is excellent.
A ceramic layer 60 is laminated on the upper surface 2a (upper surface 42a of the second insulating organic film 42) in the thickness direction of the laminate 2 including at least the internal electrode 20 and the insulating organic film 40, with an intermediate layer 50 interposed therebetween.
As shown in fig. 1, the ceramic layer 60 preferably covers the entire outer surface (upper surface 2a of the laminate 2, side surface (surface along the thickness direction of the laminate 2, side surface of the first adhesive layer 31, side surface of the second adhesive layer 32, side surface of the first insulating organic film 41, and side surface of the second insulating organic film 42) 2b of the laminate 2 via the intermediate layer 50. In other words, the intermediate layer 50 preferably covers the entire outer surface of the laminate 2, and the ceramic layer 60 covers the entire outer surface (upper surface 50a of the intermediate layer 50, side surface (surface along the thickness direction of the laminate 2) 50 b) of the intermediate layer 50.
As shown in fig. 1, the ceramic layer 60 preferably includes a ceramic base layer 61 and a ceramic surface layer 62 formed on an upper surface (upper surface in the thickness direction of the ceramic base layer 61) 61a of the ceramic base layer 61 and having irregularities.
The sum of the thickness of the ceramic base layer 61, the thickness of the ceramic surface layer 62, the thicknesses of the intermediate layer 50, the second adhesive layer 32, and the thickness of the second insulating organic film 42 (hereinafter referred to as "total thickness (4)") is preferably 125 μm or less, more preferably 110 μm or less. When the total thickness (4) is 125 μm or less, the electrostatic chuck apparatus 1 is excellent in voltage resistance and plasma resistance, and as a result, the adsorption force is excellent.
The first internal electrode 21 and the second internal electrode 22 may be in contact with the first insulating organic film 41 or the second insulating organic film 42. As shown in fig. 1, the first internal electrode 21 and the second internal electrode 22 may be formed inside the second adhesive layer 32. The arrangement of the first internal electrode 21 and the second internal electrode 22 can be appropriately designed.
The first internal electrode 21 and the second internal electrode 22 are independent from each other, and therefore, not only voltages of the same polarity but also voltages of different polarities can be applied. The electrode pattern and shape of the first internal electrode 21 and the second internal electrode 22 are not particularly limited as long as they can adsorb an adsorbate such as a conductor, a semiconductor, an insulator, or the like. In addition, only the first internal electrode 21 may be provided as a monopole.
The electrostatic chuck device 1 of the present embodiment is not particularly limited as long as the ceramic layer 60 is laminated on at least the upper surface 42a of the second insulating organic film 42 with the intermediate layer 50 interposed therebetween. For example, the substrate 10 shown in fig. 1 may not be provided.
The substrate 10 is not particularly limited, and may be a ceramic substrate, a silicon carbide substrate, a metal substrate made of aluminum, stainless steel, or the like.
The internal electrode 20 is not particularly limited as long as it is an electrode made of a conductive material capable of exhibiting electrostatic adsorption force when a voltage is applied. As the internal electrode 20, for example, a film made of a metal such as copper, aluminum, gold, silver, platinum, chromium, nickel, or tungsten, or a film made of at least two metals selected from the above metals is preferably used. Examples of such a metal film include a film formed by vapor deposition, plating, sputtering, or the like, and a film formed by applying a dry conductive paste, and specifically, a metal foil such as a copper foil.
The thickness of the internal electrode 20 is not particularly limited as long as the thickness of the second adhesive layer 32 is larger than the thickness of the internal electrode 20. The thickness of the internal electrode 20 is preferably 20 μm or less. When the thickness of the internal electrode 20 is 20 μm or less, the second insulating organic film 42 is not likely to have irregularities on the upper surface 42a thereof when formed. As a result, when the ceramic layer 60 is formed on the second insulating organic film 42, a problem is less likely to occur when the ceramic layer 60 is polished.
The thickness of the internal electrode 20 is preferably 1 μm or more. When the thickness of the internal electrode 20 is 1 μm or more, sufficient bonding strength can be obtained when bonding the internal electrode 20 to the first insulating organic film 41 or the second insulating organic film 42.
When voltages having different polarities are applied to the first internal electrode 21 and the second internal electrode 22, the interval between adjacent first internal electrodes 21 and second internal electrodes 22 (the interval in the direction perpendicular to the thickness direction of the internal electrode 20) is preferably 2mm or less. If the distance between the first internal electrode 21 and the second internal electrode 22 is 2mm or less, a sufficient electrostatic force is generated between the first internal electrode 21 and the second internal electrode 22, and a sufficient adsorption force is generated.
The distance from the internal electrode 20 to the adsorbate, that is, the distance from the upper surface 21a of the first internal electrode 21 and the upper surface 22a of the second internal electrode 22 to the adsorbate adsorbed on the ceramic surface layer 62 (the sum of the thicknesses of the second adhesive layer 32, the second insulating organic film 42, the intermediate layer 50, the ceramic base layer 61, and the ceramic surface layer 62 present on the upper surface 21a of the first internal electrode 21 and the upper surface 22a of the second internal electrode 22) is preferably 50 μm to 125 μm. When the distance from the internal electrode 20 to the adherend is 50 μm or more, the insulation properties of the laminate composed of the second adhesive layer 32, the second insulating organic film 42, the intermediate layer 50, the ceramic underlayer 61, and the ceramic surface layer 62 can be ensured. On the other hand, if the distance from the internal electrode 20 to the adsorbate is 125 μm or less, a sufficient adsorption force is generated.
As the adhesive constituting the adhesive layer 30, an adhesive containing one or more resins selected from epoxy resins, phenolic resins, styrene-based block copolymers, polyamide resins, acrylonitrile-butadiene copolymers, polyester resins, polyimide resins, silicone resins, amine compounds, bismaleimide compounds, and the like as main components can be used.
Examples of the epoxy resin include difunctional or polyfunctional epoxy resins such as bisphenol epoxy resin, phenol novolac epoxy resin, cresol novolac epoxy resin, glycidyl ether epoxy resin, glycidyl ester epoxy resin, glycidyl amine epoxy resin, trihydroxyphenyl methane epoxy resin, tetraglycidyl phenol alkane epoxy resin, naphthalene epoxy resin, diglycidyl diphenylmethane epoxy resin, and diglycidyl biphenyl epoxy resin. Of these, bisphenol type epoxy resins are preferable. Among bisphenol-type epoxy resins, bisphenol-a-type epoxy resins are particularly preferred. In the case of using an epoxy resin as a main component, a curing agent or a curing accelerator for an epoxy resin such as imidazoles, tertiary amines, phenols, dicyandiamides, aromatic diamines, or organic peroxides may be blended as necessary.
Examples of the phenolic resin include novolac resins such as alkylphenol resins, paraphenylphenol resins and bisphenol A type phenolic resins, resol resins and polyphenyl paraphenol resins.
Examples of the styrene-based block copolymer include styrene-butadiene-styrene block copolymer (SBS), styrene-isoprene-styrene block copolymer (SIS), and styrene-ethylene-propylene-styrene copolymer (SEPS).
The thickness of the adhesive layer 30 (first adhesive layer 31, second adhesive layer 32) is not particularly limited, but is preferably 5 μm to 20 μm, more preferably 10 μm to 20 μm. When the thickness of the adhesive layer 30 (the first adhesive layer 31 and the second adhesive layer 32) is 5 μm or more, the function of the adhesive is sufficiently exhibited. On the other hand, if the thickness of the adhesive layer 30 (the first adhesive layer 31 and the second adhesive layer 32) is 20 μm or less, the inter-electrode insulation of the internal electrode 20 can be ensured without impairing the adsorption force.
The material constituting the insulating organic film 40 is not particularly limited, and for example, polyesters such as polyethylene terephthalate, polyolefins such as polyethylene, polyimides, polyamides, polyamideimides, polyethersulfones, polyphenylene sulfides, polyetherketones, polyetherimides, triacetylcellulose, silicone rubber, polytetrafluoroethylene, and the like can be used. Among them, from the viewpoint of excellent insulation properties, polyesters, polyolefins, polyimides, silicone rubbers, polyetherimides, polyethersulfones, polytetrafluoroethylene are preferable, and polyimide is more preferable. Examples of polyimide films that can be used include Kapton (trade name) manufactured by eastern dupont, upilex (trade name) manufactured by yu, inc.
The thickness of the insulating organic film 40 (the first insulating organic film 41 and the second insulating organic film 42) is not particularly limited, but is preferably 10 μm to 100 μm, more preferably 10 μm to 50 μm. When the thickness of the insulating organic film 40 (the first insulating organic film 41 and the second insulating organic film 42) is 10 μm or more, the insulating property can be ensured. On the other hand, if the thickness of the insulating organic film 40 (the first insulating organic film 41 and the second insulating organic film 42) is 100 μm or less, a sufficient adsorption force is generated.
The intermediate layer 50 preferably contains at least one of an organic insulating resin and an inorganic insulating resin, and at least one of an inorganic filler and a fibrous filler.
The organic insulating resin is not particularly limited, and examples thereof include polyimide-based resins, epoxy-based resins, and acrylic-based resins.
The inorganic insulating resin is not particularly limited, and examples thereof include a silane-based resin and a silicone-based resin.
Preferably, the intermediate layer 50 comprises polysilazane. As the polysilazane, for example, a material known in the art can be cited. The polysilazane may be an organic polysilazane or an inorganic polysilazane. These materials may be used singly or in combination of two or more.
The content of the inorganic filler in the intermediate layer 50 is preferably 100 parts by mass to 300 parts by mass, more preferably 150 parts by mass to 250 parts by mass, relative to 100 parts by mass of polysilazane. When the content of the inorganic filler in the intermediate layer 50 is within the above range, the inorganic filler particles may form irregularities on the surface of the resin film as a cured product of the intermediate layer 50, so that the powder of the thermal spraying material easily enters between the inorganic filler particles, and the thermal spraying material can be firmly adhered to the surface of the resin film.
The inorganic filler is not particularly limited, but is preferably at least one selected from the group consisting of alumina, silica, and yttria.
Preferably, the inorganic filler is at least one of spherical powder and irregular powder.
The spherical powder is a spherical body in which corners of the powder particles are rounded. The irregular powder is a powder having a crushed shape, a plate shape, a scale shape, or a needle shape, which cannot be obtained in a fixed shape.
The average particle diameter of the inorganic filler is preferably 1 μm to 20. Mu.m. In the case of the spherical powder, the diameter (outer diameter) is used as the particle diameter, and in the case of the irregular powder, the longest portion of the shape is used as the particle diameter.
Preferably, the fibrous filler is at least one selected from the group consisting of plant fibers, inorganic fibers, and fibrillated organic resins.
Examples of the plant fiber include pulp.
Examples of the inorganic fibers include fibers made of alumina.
The organic resin to be fibrillated may be a fiber made of aramid, teflon (registered trademark), or the like.
The inorganic filler is preferably used in combination with the fibrous filler, and the total content of the inorganic filler and the fibrous filler is preferably 10% by volume to 80% by volume with respect to the entire (100% by volume) of the intermediate layer 50. When the total content of the inorganic filler and the fibrous filler in the intermediate layer 50 is within the above-described range, the ceramic layer 60 can be uniformly formed on the intermediate layer 50 by thermal spraying.
The thickness of the intermediate layer 50 is preferably 1 μm to 40 μm, more preferably 5 μm to 20 μm. If the thickness of the intermediate layer 50 is 1 μm or more, the ceramic layer 60 can be uniformly formed on the intermediate layer 50 by sputtering without making a part of the intermediate layer 50 thinner. On the other hand, when the thickness of the intermediate layer 50 is 40 μm or less, a sufficient adsorption force is generated.
The material constituting the ceramic layer 60 is not particularly limited, and for example, boron nitride, aluminum nitride, zirconium oxide, silicon oxide, tin oxide, indium oxide, quartz glass, sodium glass, lead glass, borosilicate glass, zirconium nitride, titanium oxide, or the like can be used. These materials may be used singly or in combination of two or more.
These materials are preferably powders having an average particle diameter of 1 μm to 25. Mu.m. By using such a powder, the voids of the ceramic layer 60 can be reduced, and the withstand voltage of the ceramic layer 60 can be improved.
The thickness of the ceramic base layer 61 is preferably 10 μm to 80 μm, more preferably 40 μm to 60 μm. When the thickness of the ceramic underlayer 61 is 10 μm or more, sufficient plasma resistance and voltage resistance are exhibited. On the other hand, when the thickness of the ceramic underlayer 61 is 80 μm or less, a sufficient adsorption force is generated.
The thickness of the ceramic surface layer 62 is preferably 5 μm to 20 μm. If the thickness of the ceramic surface layer 62 is 5 μm or more, irregularities may be formed throughout the entire range of the ceramic surface layer 62. On the other hand, when the thickness of the ceramic surface layer 62 is 20 μm or less, a sufficient adsorption force is generated.
The ceramic surface layer 62 has a surface polished to improve its adsorption force and to adjust the surface roughness Ra.
The surface roughness Ra herein means a value measured by a method defined in JIS B0601-1994.
The surface roughness Ra of the ceramic surface 62 is preferably 0.05 μm to 0.5 μm. When the surface roughness Ra of the ceramic surface layer 62 is within the above-described range, the adsorbate can be favorably adsorbed. When the surface roughness Ra of the ceramic surface layer 62 increases, the contact area between the adsorbate and the ceramic surface layer 62 becomes smaller, and therefore the adsorption force also decreases.
The electrostatic chuck device 1 according to the present embodiment described above includes the plurality of internal electrodes 20, the insulating organic film 40 provided on both sides in the thickness direction of the internal electrodes 20, and the ceramic layer 60 laminated on the upper surface 2a in the thickness direction of the laminate 2 including at least the internal electrodes 20 and the insulating organic film 40 via the intermediate layer 50. Therefore, at least on the upper surface 2a side in the thickness direction of the laminate 2, plasma resistance and voltage resistance can be improved, and abnormal discharge during use can be suppressed. Therefore, the electrostatic chuck device 1 of the present embodiment is also excellent in adsorptivity.
In the electrostatic chuck apparatus 1 of the present embodiment, if the ceramic layer 60 covers the entire outer surface of the laminate 2 with the intermediate layer 50 interposed therebetween, plasma resistance and voltage resistance can be improved on the upper surface 2a side and the side surface 2b side of the laminate 2, and abnormal discharge at the time of use can be suppressed. Therefore, the electrostatic chuck device 1 of the present embodiment is also excellent in adsorptivity.
In the electrostatic chuck device 1 of the present embodiment, the ceramic layer 60 has a ceramic base layer 61 and a ceramic surface layer 62 formed on the upper surface 61a of the ceramic base layer 61 and having irregularities, whereby the desired suction force can be controlled.
In the electrostatic chuck apparatus 1 of the present embodiment, the intermediate layer 50 includes at least one of an organic insulating resin and an inorganic insulating resin, and at least one of an inorganic filler and a fibrous filler, and thus the ceramic layer 60 can be uniformly formed on the intermediate layer 50.
In the electrostatic chuck apparatus 1 of the present embodiment, the inorganic filler is at least one of spherical powder and irregular powder, and thus, the filler can be designed so that the filled state of the resin in the intermediate layer 50 is uniformly dispersed or densely filled, and a part of the filler is exposed from the resin, so that the adhesion with the ceramic base layer 61 can be improved.
In the electrostatic chuck apparatus 1 of the present embodiment, the fibrous filler is at least one selected from the group consisting of plant fibers, inorganic fibers, and fibrous organic resins, and thus, the strength and toughness of the intermediate layer 50 can be improved, the adhesion to the ceramic base layer 61 by the arrangement of the fibers on the surface of the intermediate layer 50 can be improved, and the deformation caused by the difference in thermal expansion coefficient between the ceramic base layer 61 and the insulating organic film 40 across the intermediate layer 50 can be alleviated.
In the electrostatic chuck apparatus 1 of the present embodiment, the insulating organic film is a polyimide film, thereby improving voltage resistance.
In the electrostatic chuck apparatus 1 of the present embodiment, the inorganic filler composed of the spherical powder and the irregular powder is at least one selected from the group consisting of alumina, silica, and yttria, thereby improving plasma resistance and voltage resistance.
[ Method for manufacturing electrostatic chuck ]
A method for manufacturing the electrostatic chuck device 1 according to the present embodiment will be described with reference to fig. 1.
A metal such as copper is vapor-deposited on the surface (upper surface in the thickness direction of the first insulating organic film 41) 41a of the first insulating organic film 41 to form a metal film. Then, etching is performed to pattern the metal film into a predetermined shape, thereby forming the first internal electrode 21 and the second internal electrode 22.
Next, a second insulating organic film 42 is adhered to the upper surface 20a of the internal electrode 20 via a second adhesive layer 32.
Next, the laminate composed of the first insulating organic film 41, the internal electrode 20, the second adhesive layer 32, and the second insulating organic film 42 is bonded to the surface 10a of the substrate 10 via the first adhesive layer 31 so that the lower surface 41b of the first insulating organic film 41 is located on the surface 10a side of the substrate 10.
Next, the intermediate layer 50 is formed so as to cover the entire outer surface of the laminate 2 including the internal electrode 20 and the insulating organic film 40.
The method of forming the intermediate layer 50 is not particularly limited as long as the intermediate layer 50 can be formed so as to cover the entire outer surface of the laminated body 2. Examples of the method for forming the intermediate layer 50 include a bar coating method, a spin coating method, and a spray coating method.
Next, the ceramic base layer 61 is formed so as to cover the entire outer surface of the intermediate layer 50.
Examples of the method for forming ceramic base layer 61 include a method of forming ceramic base layer 61 by applying a slurry containing a material constituting ceramic base layer 61 to the entire outer surface of intermediate layer 50 and sintering the slurry, and a method of forming ceramic base layer 61 by spraying a material constituting ceramic base layer 61 to the entire outer surface of intermediate layer 50.
Here, sputtering is a method of forming a film by heating and melting a material to be a coating layer (in this embodiment, the ceramic base layer 61) and then injecting the material into a target object with a compressed gas.
Next, a ceramic surface layer 62 is formed on the upper surface 61a of the ceramic base layer 61.
Examples of the method for forming the ceramic surface layer 62 include a method in which a mask having a predetermined shape is applied to the upper surface 61a of the ceramic base layer 61, and then a material constituting the ceramic surface layer 62 is sprayed onto the upper surface 61a of the ceramic base layer 61 to form the ceramic surface layer 62, and a method in which a material constituting the ceramic surface layer 62 is sprayed onto the entire upper surface 61a of the ceramic base layer 61 to form the ceramic surface layer 62, and then the ceramic surface layer 62 is cut by a blast treatment to form the ceramic surface layer 62 into a concave-convex shape.
Through the above steps, the electrostatic chuck apparatus 1 of the present embodiment can be manufactured.
Examples
The present invention will be further specifically described with reference to examples and comparative examples, but the present invention is not limited to the examples.
Example 1
Copper having a thickness of 9 μm was plated on one surface of a polyimide film (trade name: kapton, manufactured by Toli DuPont Co., ltd.) having a film thickness of 12.5 μm as the first insulating organic film 41. A photoresist is coated on the surface of the copper foil, and then, after pattern exposure, a development process is performed to remove unnecessary copper foil by etching. Then, the copper foil on the polyimide film is cleaned to remove the photoresist, thereby forming the first internal electrode 21 and the second internal electrode 22. An insulating adhesive sheet, which is semi-cured by drying and heating, is laminated as the second adhesive layer 32 on the first internal electrode 21 and the second internal electrode 22. As the insulating adhesive sheet, a sheet-shaped material was used in which 27 parts by mass of bismaleimide resin, 3 parts by mass of diaminosiloxane, 20 parts by mass of resol resin, 10 parts by mass of biphenyl epoxy resin, and 240 parts by mass of ethyl acrylate-butyl acrylate-acrylonitrile copolymer were mixed and dissolved in an appropriate amount of tetrahydrofuran. Then, a polyimide film (trade name: kapton, manufactured by eastern dupont) having a film thickness of 12.5 μm was attached as the second insulating organic film 42, and a laminate was obtained by heat treatment. Further, the thickness of the second adhesive layer 32 after drying was 20 μm.
Further, a sheet of insulating adhesive having the same composition as the above-described semi-cured insulating adhesive sheet is laminated as the first adhesive layer 31 on the surface of the first insulating organic film 41 of the laminate opposite to the surface on which the first internal electrode 21 and the second internal electrode 22 are formed. Then, the laminate was bonded to the aluminum substrate 10 by heat treatment. Further, the thickness of the first adhesive layer 31 after drying was 10 μm.
Next, 100 parts by mass of polysilazane and 200 parts by mass of an inorganic filler (average particle diameter: 3 μm) composed of alumina were mixed with butyl acetate as a diluting medium, and the inorganic filler was further uniformly dispersed by an ultrasonic dispersing machine to prepare a coating material.
Next, the coating material is sprayed on the surface of the second insulating organic film 42 and the side surface of the laminate 2 of the laminate bonded to the substrate 10, and then, the laminate is heated and dried, thereby forming the intermediate layer 50. Further, the thickness of the intermediate layer 50 after drying on the surface of the second insulating organic film 42 was 10 μm.
Then, aluminum oxide (Al 2O3) powder (average particle diameter: 8 μm) was sprayed onto the entire surface of the intermediate layer 50 by plasma spraying to form a ceramic base layer 61 having a thickness of 50. Mu.m.
Then, a mask of a predetermined shape was applied to the surface of the ceramic underlayer 61, and then the surface of the ceramic underlayer 61 was sprayed with the powder of alumina (Al 2O3) (average particle diameter: 8 μm) to form a ceramic surface layer 62 having a thickness of 15 μm.
Next, the surface of the ceramic surface layer 62 to which the adsorbate was adsorbed was subjected to surface grinding by a diamond grinding wheel, to obtain an electrostatic chuck apparatus of example 1.
The surface of the obtained electrostatic chuck apparatus was measured by JIS B0601-1994, and as a result, the surface roughness Ra was 0.3. Mu.m.
Example 2
An electrostatic chuck apparatus of example 2 was obtained in the same manner as in example 1, except that in example 1, the thickness of the first insulating organic film 41 and the thickness of the second insulating organic film 42 were changed to 25 μm.
Example 3
An electrostatic chuck apparatus of example 3 was obtained in the same manner as in example 1, except that in example 1, the thickness of the first insulating organic film 41 and the thickness of the second insulating organic film 42 were changed to 38 μm, the thickness of the second adhesive layer 32 was changed to 10 μm, and the thickness of the first internal electrode 21 and the thickness of the second internal electrode 22 were changed to 5 μm.
Comparative example 1
In the same manner as in example 1 except that in example 1, the thickness of the first insulating organic film 41 and the thickness of the second insulating organic film 42 were changed to 50 μm, the thickness of the ceramic base layer 61 was changed to 30 μm, the thickness of the intermediate layer 50 was changed to 15 μm, the thickness of the first internal electrode 21 and the thickness of the second internal electrode 22 were changed to 5 μm, and the thickness of the first adhesive layer 31 was changed to 20 μm, the electrostatic chuck device of comparative example 1 was obtained.
Comparative example 2
An electrostatic chuck apparatus of comparative example 2 was obtained in the same manner as in comparative example 1 except that in comparative example 1, the thickness of the ceramic underlayer 61 was changed to 50 μm.
Comparative example 3
An electrostatic chuck apparatus of comparative example 3 was obtained in the same manner as in comparative example 2 except that in comparative example 2, the thickness of the ceramic surface layer 62 was changed to 20 μm, the thickness of the ceramic base layer 61 was changed to 80 μm, and the thickness of the intermediate layer 50 was changed to 30 μm.
Comparative example 4
An electrostatic chuck apparatus of comparative example 4 was obtained in the same manner as in comparative example 3, except that in comparative example 3, alumina (Al 2O3) was directly sprayed on the surface of the second insulating organic film 42 by the plasma spraying method (average particle diameter: 8 μm) so as not to provide the intermediate layer 50.
The thicknesses of the layers of the electrostatic chuck apparatuses obtained in examples 1 to 3 and comparative examples 1 to 4 and the total values thereof are shown in table 1.
TABLE 1
Next, the electrostatic chuck devices obtained in examples 1 to 3 and comparative examples 1 to 4 were used to evaluate the voltage resistance, the adsorption force, and the plasma resistance. The results are shown in table 2.
[ Evaluation item ]
< Withstand Voltage Property >
The withstand voltage characteristics were evaluated by applying a voltage of ±2.5kV to the first internal electrode 21 and the second internal electrode 22 of the electrostatic chuck apparatus by a high-voltage power supply apparatus under vacuum (10 Pa) and holding for 2 minutes. During 2 minutes, no change was visually observed as "acceptable", and dielectric breakdown of the electrodes or the insulating organic film and the ceramic layer was observed as "unacceptable".
< Adsorption force >
For the adsorption force, an organosilicon dummy wafer as an adsorbate was used, and the adsorbate was adsorbed on the surface of the electrostatic chuck device under vacuum (10 Pa or less), and a voltage of ±2.5kV was applied to the first internal electrode 21 and the second internal electrode 22, followed by holding for 30 seconds. Helium gas is flowed from a through hole provided in the substrate 10 while maintaining the applied voltage, and the leakage amount of the helium gas is measured while increasing the air pressure. A dummy wafer capable of stable adsorption at an air pressure of 100Torr is considered to be "acceptable", and an inability to stably adsorb is considered to be "unacceptable". Stable adsorption means that the phenomenon that the wafer floats up by increasing the helium pressure and the leakage amount of helium gas increases sharply does not occur.
< Plasma resistance >
For plasma resistance, the electrostatic chuck device was set in a parallel plate type RIE device, and then oxygen (10 sccm) and carbon tetrafluoride gas (40 sccm) were introduced under vacuum (20 Pa or less) using a high frequency power supply (output 250W), and the change in the surface state of the electrostatic chuck device after 24 hours exposure was visually observed. The ceramic layer remaining on the entire surface was regarded as "acceptable", and the ceramic layer was partially disappeared to expose the insulating organic film, which was regarded as "unacceptable".
TABLE 2
| Example 1 | Example 2 | Example 3 | Comparative example 1 | Comparative example 2 | Comparative example 3 | Comparative example 4 | |
| Voltage withstand characteristics | Qualified product | Qualified product | Qualified product | Qualified product | Qualified product | Qualified product | Qualified product |
| Adsorption force | Qualified product | Qualified product | Qualified product | Qualified product | Failure to pass | Failure to pass | Failure to pass |
| Plasma resistance | Qualified product | Qualified product | Qualified product | Failure to pass | Qualified product | Qualified product | Failure to pass |
As is clear from table 2, the electrostatic chuck apparatuses obtained in examples 1 to 3 were films having a distance of 200 μm or less from the surface 10a of the substrate 10 to the surface of the ceramic surface layer 62, but were found to have excellent voltage resistance and plasma resistance, and as a result, have excellent adsorption force.
On the other hand, since the ceramic underlayer 61 of the electrostatic chuck apparatus obtained in comparative example 1 is thin, sufficient plasma resistance cannot be obtained. Since the distances from the surface 10a of the substrate 10 to the surface of the ceramic surface layer 62 of the electrostatic chuck devices obtained in comparative examples 2 and 3 exceeded 200 μm, it was confirmed that the adsorption force was poor.
Further, since the electrostatic chuck device obtained in comparative example 4 did not have the intermediate layer 50, it was confirmed that the ceramic spray material did not adhere sufficiently to the surface of the second insulating organic film 42, and plasma resistance was poor.
Industrial applicability
According to the electrostatic chuck device of the present invention, the ceramic layer is laminated on the upper surface in the thickness direction of the laminate including the internal electrode and the insulating organic film provided on both sides in the thickness direction thereof via the intermediate layer, whereby a high adsorption force can be obtained while having excellent plasma resistance and voltage resistance characteristics. Therefore, according to the electrostatic chuck apparatus of the present invention, it is possible to stably hold a conductor or semiconductor such as a wafer for a dry etching apparatus in a semiconductor manufacturing process by electrostatic attraction.
Reference numerals illustrate:
1 electrostatic chuck device, 2 laminate, 10 substrate, 20 internal electrode, 21 first internal electrode, 22 second internal electrode, 30 adhesive layer, 31 first adhesive layer, 32 second adhesive layer, 40 insulating organic film, 41 first insulating organic film, 42 second insulating organic film, 50 intermediate layer, 60 ceramic layer, 61 ceramic base layer, 62 ceramic surface layer.
Claims (7)
1. An electrostatic chuck device, comprising:
a plurality of internal electrodes;
An insulating organic film provided on both sides of the internal electrode in the thickness direction, and
A ceramic layer laminated on an upper surface in a thickness direction of a laminate including at least the internal electrode and the insulating organic film with an intermediate layer interposed therebetween,
The intermediate layer comprises at least one of an organic insulating resin and an inorganic insulating resin, and at least one of an inorganic filler and a fibrous filler,
The insulating organic film is composed of a first insulating organic film provided on the lower surface side in the thickness direction of the internal electrode and a second insulating organic film provided on the upper surface side in the thickness direction of the internal electrode,
A first adhesive layer is provided on a surface of the first insulating organic film on a side opposite to the internal electrode,
A second adhesive layer is provided between the first insulating organic film and the second insulating organic film and between the internal electrode provided on the upper surface side in the thickness direction of the first insulating organic film,
The total of the thickness of the first adhesive layer, the thickness of the first insulating organic film, the thickness of the internal electrode, the thickness of the second adhesive layer, the thickness of the second insulating organic film, the thickness of the intermediate layer, and the thickness of the ceramic layer is 200 μm or less.
2. The electrostatic chuck apparatus according to claim 1, wherein,
The ceramic layer covers the entire outer surface of the laminate via the intermediate layer.
3. The electrostatic chuck apparatus according to claim 1, wherein,
The ceramic layer has a base layer and a surface layer formed on the upper surface of the base layer and having irregularities.
4. The electrostatic chuck apparatus according to claim 1, wherein,
The inorganic filler is at least one of spherical powder and irregular powder.
5. The electrostatic chuck apparatus according to claim 4, wherein,
The spherical powder and the irregular powder are at least one selected from the group consisting of alumina, silica, and yttria.
6. The electrostatic chuck apparatus according to any one of claims 1 to 5, wherein,
The fibrous filler is at least one selected from the group consisting of plant fibers, inorganic fibers, and fibrillated organic resins.
7. The electrostatic chuck apparatus according to any one of claims 1 to 5, wherein,
The insulating organic film is a polyimide film.
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| CN202411064327.5A CN118919477A (en) | 2018-12-27 | 2019-12-25 | Electrostatic chuck device |
| CN202411064320.3A CN118919476A (en) | 2018-12-27 | 2019-12-25 | Electrostatic chuck device |
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| JP2018-244941 | 2018-12-27 | ||
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| PCT/JP2019/050846 WO2020138179A1 (en) | 2018-12-27 | 2019-12-25 | Electrostatic chuck device |
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| CN202411064320.3A Division CN118919476A (en) | 2018-12-27 | 2019-12-25 | Electrostatic chuck device |
| CN202411064327.5A Division CN118919477A (en) | 2018-12-27 | 2019-12-25 | Electrostatic chuck device |
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| CN201980086522.9A Active CN113228495B (en) | 2018-12-27 | 2019-12-25 | Electrostatic chuck device |
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| JPH10261697A (en) * | 1997-03-19 | 1998-09-29 | Kobe Steel Ltd | Electrostatic chuck |
| TW200832604A (en) * | 2006-10-31 | 2008-08-01 | Tomoegawa Co Ltd | Electrostatic chuck device |
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| KR102209272B1 (en) * | 2013-06-18 | 2021-01-29 | 에이지씨 가부시키가이샤 | Glass-conveying roll, method for manufacturing same, and method for manufacturing flat glass using same |
| JP6244804B2 (en) * | 2013-10-15 | 2017-12-13 | 住友大阪セメント株式会社 | Electrostatic chuck device |
| JP6123952B1 (en) * | 2015-08-27 | 2017-05-10 | 住友大阪セメント株式会社 | Electrostatic chuck device |
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| JPH10261697A (en) * | 1997-03-19 | 1998-09-29 | Kobe Steel Ltd | Electrostatic chuck |
| TW200832604A (en) * | 2006-10-31 | 2008-08-01 | Tomoegawa Co Ltd | Electrostatic chuck device |
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| TW202034443A (en) | 2020-09-16 |
| CN113228495A (en) | 2021-08-06 |
| CN118919477A (en) | 2024-11-08 |
| JP7256310B2 (en) | 2023-04-11 |
| JP7335371B2 (en) | 2023-08-29 |
| WO2020138179A1 (en) | 2020-07-02 |
| JP2022058894A (en) | 2022-04-12 |
| JP2022058893A (en) | 2022-04-12 |
| JP2022058892A (en) | 2022-04-12 |
| JP7100716B2 (en) | 2022-07-13 |
| KR102481728B1 (en) | 2022-12-29 |
| CN118919476A (en) | 2024-11-08 |
| KR20210013729A (en) | 2021-02-05 |
| TWI813840B (en) | 2023-09-01 |
| JPWO2020138179A1 (en) | 2021-09-09 |
| JP7256311B2 (en) | 2023-04-11 |
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