CN113228495A - Electrostatic chuck device - Google Patents
Electrostatic chuck device Download PDFInfo
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- CN113228495A CN113228495A CN201980086522.9A CN201980086522A CN113228495A CN 113228495 A CN113228495 A CN 113228495A CN 201980086522 A CN201980086522 A CN 201980086522A CN 113228495 A CN113228495 A CN 113228495A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
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- Condensed Matter Physics & Semiconductors (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Mechanical Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
An electrostatic chuck device (1) is provided with: a plurality of internal electrodes (20); insulating organic films (40) provided on both sides in the thickness direction of the internal electrodes (20); and a ceramic layer (60) that is laminated on the upper surface (2a) in the thickness direction of a laminate (2) that includes at least the internal electrodes (20) and the insulating organic film (40) with an intermediate layer (50) therebetween.
Description
Technical Field
The present invention relates to an electrostatic chuck device.
Background
In the case of manufacturing a semiconductor integrated circuit using a semiconductor wafer or in the case of manufacturing a liquid crystal panel using an insulating substrate such as a glass substrate or a film, it is necessary to hold a substrate such as a semiconductor wafer, a glass substrate, or an insulating substrate at a predetermined position by suction. Therefore, mechanical chucks, vacuum chucks, and the like, which are mechanical methods, are used to hold these substrates by suction. However, these methods have problems such as difficulty in uniformly holding the substrate (the adherend), inability to use in vacuum, and excessive temperature rise on the sample surface. Therefore, in recent years, an electrostatic chuck device capable of solving these problems is used for holding an adherend.
The electrostatic chuck device includes, as main components, a conductive support member serving as an internal electrode, and a dielectric layer made of a dielectric material covering the conductive support member. The adsorbate can be adsorbed by the main portion. When a voltage is applied to an internal electrode in the electrostatic chuck device to generate a potential difference between the adherend and the conductive support member, electrostatic attraction force is generated between the dielectric layers. Thereby, the body to be adsorbed is supported substantially flat with respect to the conductive support member.
As a conventional electrostatic chuck device, an electrostatic chuck device in which an insulating organic film is laminated on an internal electrode to form a dielectric layer is known (for example, see patent document 1). In addition, an electrostatic chuck device is known in which a dielectric layer is formed by thermally spraying ceramic on an internal electrode (for example, see patent document 2). In addition, there is known an electrostatic chuck device in which a ceramic layer is formed by thermally spraying a ceramic on an insulating organic film laminated on an internal electrode (for example, see patent document 3).
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2004-235563
Patent document 2: japanese examined patent publication (Kokoku) No. 6-36583
Patent document 3: japanese patent No. 5054022
Disclosure of Invention
Technical problem to be solved by the invention
The electrostatic chuck device described in patent document 1 has an excellent adsorption force by utilizing coulomb force generated by a dielectric layer formed of an insulating organic film provided on an internal electrode to adsorb an object to be adsorbed. However, the electrostatic chuck device has the following technical problems: the resistance under the plasma environment used by the dry etching apparatus is low, and the product life is short.
Further, the electrostatic chuck device having the dielectric layer formed by spraying ceramic on the internal electrode as described in patent document 2 has plasma resistance. However, since voids are present between the ceramic particles, it is difficult to obtain stable insulation, and the dielectric layer must be thick to ensure insulation. Therefore, there is a technical problem that it is difficult to obtain a high adsorption force as an electrostatic chuck device for adsorbing an adherend by coulomb force.
In the electrostatic chuck apparatus having the ceramic layer formed by thermally spraying the ceramic on the insulating organic film laminated on the internal electrode as described in patent document 3, since the ceramic layer is thermally sprayed on the insulating organic film, it is necessary to form irregularities on the insulating organic film. However, the formation of the irregularities or the ceramic thermal spraying reduces the insulation of the insulating organic film, and when used as an electrostatic chuck device, the ceramic layer needs to have a thickness of at least 100 μm. When the ceramic is thermally sprayed on the insulating organic film, the ceramic layer cannot cover the end of the insulating organic film. When the end portion of the insulating organic film is exposed, the plasma resistance of the electrostatic chuck device is lowered.
The present invention has been made in view of the above circumstances, and an object thereof is to provide an electrostatic chuck device having excellent plasma resistance and voltage resistance and also excellent adhesion.
Means for solving the problems
The present invention has the following aspects.
[1] An electrostatic chuck device, comprising: a plurality of internal electrodes; insulating organic films provided on both sides in the thickness direction of the internal electrodes; and a ceramic layer laminated on an upper surface in a thickness direction of a laminate including at least the internal electrode and the insulating organic film with an intermediate layer interposed therebetween.
[2] The electrostatic chuck device according to [1], wherein the ceramic layer covers the entire outer surface of the laminate with the intermediate layer interposed therebetween.
[3] The electrostatic chuck apparatus according to [1] or [2], characterized in that the ceramic layer has: a base layer; and a surface layer formed on the upper surface of the base layer and having irregularities.
[4] The electrostatic chuck apparatus according to any one of [1] to [3], characterized in that the intermediate layer includes: at least one of an organic insulating resin and an inorganic insulating resin, and at least one of an inorganic filler and a fibrous filler.
[5] The electrostatic chuck apparatus according to [4], wherein the inorganic filler is at least one of a spherical powder and a random powder.
[6] The electrostatic chuck apparatus according to [5], wherein the spherical powder and the irregular powder are at least one selected from the group consisting of alumina, silica, and yttria.
[7] The electrostatic chuck device according to any one of [4] to [6], characterized in that the fibrous filler is at least one selected from the group consisting of plant fibers, inorganic fibers, and fibrous organic resins.
[8] The electrostatic chuck device according to any one of [1] to [7], wherein the insulating organic film is a polyimide film.
[9] The electrostatic chuck device according to any one of [1] to [8], wherein the insulating organic film is composed of a first insulating organic film provided on a lower surface side in a thickness direction of the internal electrode and a second insulating organic film provided on an upper surface side in the thickness direction of the internal electrode, a first adhesive layer is provided on a surface of the first insulating organic film on a side opposite to the internal electrode, a second adhesive layer is provided between the first insulating organic film and the internal electrode and the second insulating organic film provided on the upper surface side in the thickness direction of the first insulating organic film, and a thickness of the first adhesive layer, a thickness of the first insulating organic film, a thickness of the internal electrode, a thickness of the second adhesive layer, a thickness of the second insulating organic film, a thickness of the internal electrode, and a thickness of the internal electrode, The sum of the thickness of the intermediate layer and the thickness of the ceramic layer is 200 [ mu ] m or less.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present invention, an electrostatic chuck device having excellent plasma resistance and voltage resistance and also excellent in adhesion can be provided.
Drawings
Fig. 1 is a schematic configuration of an electrostatic chucking device according to the present invention, and is a cross-sectional view taken along a height direction of the electrostatic chucking device.
Detailed Description
Next, an electrostatic chuck device to which an embodiment of the present invention is applied will be described. In the drawings used in the following description, the dimensional ratios of the respective components are not necessarily the same as actual ones.
The present embodiment is specifically described for better understanding of the gist of the invention, and does not limit the invention unless otherwise specified.
[ Electrostatic chuck device ]
Fig. 1 is a schematic configuration of an electrostatic chuck device according to the present embodiment, and is a cross-sectional view taken along a height direction of the electrostatic chuck device.
As shown in fig. 1, an electrostatic chuck device 1 according to the present embodiment includes: a substrate 10, a plurality of internal electrodes 20, an adhesive layer 30, an insulating organic film 40, an intermediate layer 50, and a ceramic layer 60. Specifically, as shown in fig. 1, the electrostatic chuck apparatus 1 according to the present embodiment includes: the substrate 10, the first internal electrodes 21, the second internal electrodes 22, the first adhesive layer 31, the second adhesive layer 32, the first insulating organic film 41, the second insulating organic film 42, the intermediate layer 50, and the ceramic layer 60.
In the electrostatic chuck apparatus 1 of the present embodiment, the first adhesive layer 31, the first insulating organic film 41, the first and second internal electrodes 21 and 22, the second adhesive layer 32, the second insulating organic film 42, the intermediate layer 50, and the ceramic layer 60 are sequentially laminated on the surface (upper surface in the thickness direction of the substrate 10) 10a of the substrate 10.
The insulating organic films 40 are provided on both sides in the thickness direction of the internal electrodes 20 (the upper surfaces 20a in the thickness direction of the internal electrodes 20, and the lower surfaces 20b in the thickness direction of the internal electrodes 20). Specifically, the second insulating organic film 42 is provided on the upper surface 21a side in the thickness direction of the first internal electrode 21 and on the upper surface 22a side in the thickness direction of the second internal electrode 22. Further, a first insulating organic film 41 is provided on the lower surface 21b side in the thickness direction of the first internal electrode 21 and the lower surface 22b side in the thickness direction of the second internal electrode 22.
The first adhesive layer 31 is provided on the surface of the first insulating organic film 41 opposite to the internal electrode 20 (the lower surface 41b of the first insulating organic film 41). The second adhesive layer 32 is provided between the first insulating organic film 41 and the second insulating organic film 42 and the internal electrode 20 provided on the upper surface 41a in the thickness direction of the first insulating organic film 41.
The total (hereinafter referred to as "total thickness (1)") of the thickness of the first adhesive layer 31, the thickness of the first insulating organic film 41, the thickness of the internal electrode 20, the thickness of the second adhesive layer 32, the thickness of the second insulating organic film 42, the thickness of the intermediate layer 50, and the thickness of the ceramic layer 60 (the ceramic base layer 61, the ceramic surface layer 62) is preferably 200 μm or less, and more preferably 170 μm or less. When the total thickness (1) is 200 μm or less, the electrostatic chuck device 1 is excellent in voltage resistance and plasma resistance, and as a result, excellent in adsorption force.
The total of the thickness of the first adhesive layer 31, the thickness of the first insulating organic film 41, the thickness of the internal electrode 20, the thickness of the second adhesive layer 32, and the thickness of the second insulating organic film 42 (hereinafter referred to as "total thickness (2)") is preferably 110 μm or less, and more preferably 90 μm or less. When the total thickness (2) is 110 μm or less, the electrostatic chuck device 1 is excellent in voltage resistance and plasma resistance, and as a result, excellent in adsorption force.
The sum of the thickness of the second adhesive layer 32 and the thickness of the second insulating organic film 42 (hereinafter referred to as "total thickness (3)") is preferably 50 μm or less, and more preferably 40 μm or less. When the total thickness (2) is 50 μm or less, the electrostatic chuck device 1 is excellent in voltage resistance and plasma resistance, and as a result, excellent in adsorption force.
A ceramic layer 60 is laminated on an upper surface 2a (an upper surface 42a of the second insulating organic film 42) in the thickness direction of the laminate 2 including at least the internal electrodes 20 and the insulating organic film 40, with an intermediate layer 50 interposed therebetween.
As shown in fig. 1, the ceramic layer 60 preferably covers the entire outer surface 2b of the laminate 2 (the upper surface 2a and the side surfaces of the laminate 2 (the surface in the thickness direction of the laminate 2, the side surfaces of the first adhesive layer 31, the second adhesive layer 32, the side surfaces of the first insulating organic film 41, and the side surfaces of the second insulating organic film 42) with the intermediate layer 50 interposed therebetween, in other words, the intermediate layer 50 preferably covers the entire outer surface of the laminate 2, and the ceramic layer 60 preferably covers the entire outer surface of the intermediate layer 50 (the upper surface 50a and the side surfaces (the surface in the thickness direction of the laminate 2) 50 b).
As shown in fig. 1, the ceramic layer 60 preferably has: a ceramic base layer 61; the ceramic surface layer 62 is formed on the upper surface 61a of the ceramic base layer 61 (the upper surface of the ceramic base layer 61 in the thickness direction) and has irregularities.
The total of the thickness of the ceramic base layer 61, the thickness of the ceramic surface layer 62, the thickness of the intermediate layer 50, the thickness of the second adhesive layer 32, and the thickness of the second insulating organic film 42 (hereinafter referred to as "total thickness (4)") is preferably 125 μm or less, and more preferably 110 μm or less. When the total thickness (4) is 125 μm or less, the electrostatic chuck device 1 is excellent in voltage resistance and plasma resistance, and as a result, excellent in adsorption force.
The first internal electrode 21 and the second internal electrode 22 may be in contact with the first insulating organic film 41 or the second insulating organic film 42. As shown in fig. 1, the first and second inner electrodes 21 and 22 may be formed inside the second adhesive layer 32. The arrangement of the first internal electrodes 21 and the second internal electrodes 22 can be designed as appropriate.
Since the first internal electrodes 21 and the second internal electrodes 22 are independent of each other, not only voltages of the same polarity but also voltages of different polarities may be applied. The electrode pattern and shape of the first inner electrode 21 and the second inner electrode 22 are not particularly limited as long as the first inner electrode can attract an adherend such as a conductor, a semiconductor, or an insulator. In addition, only the first inner electrode 21 may be provided as a single pole.
The electrostatic chuck apparatus 1 of the present embodiment is not particularly limited in its layer structure as long as the ceramic layer 60 is laminated on at least the upper surface 42a of the second insulating organic film 42 via the intermediate layer 50. For example, the substrate 10 shown in fig. 1 may not be provided.
The substrate 10 is not particularly limited, and examples thereof include a ceramic substrate, a silicon carbide substrate, and a metal substrate made of aluminum, stainless steel, or the like.
The internal electrode 20 is not particularly limited as long as it is an electrode made of a conductive material capable of exhibiting electrostatic attraction force when a voltage is applied. As the internal electrode 20, for example, a film made of a metal such as copper, aluminum, gold, silver, platinum, chromium, nickel, or tungsten, or a film made of at least two metals selected from the above metals is preferably used. Examples of such a metal film include a film formed by vapor deposition, plating, sputtering, or the like, and a film formed by applying a dry conductive paste, and specifically, a metal foil such as a copper foil is included.
The thickness of the inner electrode 20 is not particularly limited as long as the thickness of the second adhesive layer 32 is larger than the thickness of the inner electrode 20. The thickness of the internal electrode 20 is preferably 20 μm or less. When the thickness of the internal electrode 20 is 20 μm or less, unevenness is less likely to occur on the upper surface 42a when the second insulating organic film 42 is formed. As a result, when the ceramic layer 60 is formed on the second insulating organic film 42, a problem is less likely to occur when the ceramic layer 60 is polished.
The thickness of the internal electrode 20 is preferably 1 μm or more. When the thickness of the internal electrode 20 is 1 μm or more, sufficient bonding strength can be obtained when the internal electrode 20 is bonded to the first insulating organic film 41 or the second insulating organic film 42.
When voltages having different polarities are applied to the first internal electrodes 21 and the second internal electrodes 22, the interval between the adjacent first internal electrodes 21 and second internal electrodes 22 (interval in the direction perpendicular to the thickness direction of the internal electrodes 20) is preferably 2mm or less. If the distance between the first internal electrode 21 and the second internal electrode 22 is 2mm or less, a sufficient electrostatic force is generated between the first internal electrode 21 and the second internal electrode 22, and a sufficient attracting force is generated.
The distance from the internal electrodes 20 to the adherend, that is, the distance from the upper surfaces 21a and 22a of the first and second internal electrodes 21 and 22 to the adherend adsorbed on the ceramic surface layer 62 (the total thickness of the second adhesive layer 32, the second insulating organic film 42, the intermediate layer 50, the ceramic base layer 61, and the ceramic surface layer 62 existing on the upper surfaces 21a and 22a of the first and second internal electrodes 21 and 22) is preferably 50 μm to 125 μm. When the distance from the internal electrode 20 to the adherend is 50 μm or more, the insulation of the laminate composed of the second adhesive layer 32, the second insulating organic film 42, the intermediate layer 50, the ceramic base layer 61, and the ceramic skin layer 62 can be ensured. On the other hand, if the distance from the internal electrode 20 to the adherend is 125 μm or less, sufficient adsorption force is generated.
As the adhesive constituting the adhesive layer 30, an adhesive containing one or more resins selected from epoxy resins, phenol resins, styrene-based block copolymers, polyamide resins, acrylonitrile-butadiene copolymers, polyester resins, polyimide resins, silicone resins, amine compounds, bismaleimide compounds, and the like as a main component can be used.
As the epoxy resin, there can be mentioned: bifunctional or polyfunctional epoxy resins such as bisphenol-type epoxy resins, phenol novolac-type epoxy resins, cresol novolac-type epoxy resins, glycidyl ether-type epoxy resins, glycidyl ester-type epoxy resins, glycidyl amine-type epoxy resins, trishydroxyphenylmethane-type epoxy resins, tetraglycidylphenol alkane-type epoxy resins, naphthalene-type epoxy resins, diglycidyl diphenylmethane-type epoxy resins, and diglycidyl biphenyl-type epoxy resins. Among these, bisphenol type epoxy resins are preferable. Among bisphenol type epoxy resins, bisphenol a type epoxy resins are particularly preferable. When an epoxy resin is used as a main component, a curing agent or a curing accelerator for an epoxy resin such as imidazoles, tertiary amines, phenols, dicyandiamides, aromatic diamines, and organic peroxides may be added as needed.
As the phenolic resin, there can be mentioned: and phenol novolac resins such as alkyl phenol novolac resins, p-phenyl phenol novolac resins, and bisphenol a phenol novolac resins, resol phenol novolac resins, and polyphenyl phenol novolac resins.
As the styrenic block copolymer, there can be mentioned: styrene-butadiene-styrene block copolymers (SBS), styrene-isoprene-styrene block copolymers (SIS), styrene-ethylene-propylene-styrene copolymers (SEPS), and the like.
The thickness of the adhesive layer 30 (first adhesive layer 31, second adhesive layer 32) is not particularly limited, but is preferably 5 μm to 20 μm, and more preferably 10 μm to 20 μm. When the thickness of the adhesive layer 30 (the first adhesive layer 31, the second adhesive layer 32) is 5 μm or more, the function of the adhesive is sufficiently exhibited. On the other hand, if the thickness of the adhesive layer 30 (first adhesive layer 31, second adhesive layer 32) is 20 μm or less, the inter-electrode insulation of the internal electrodes 20 can be ensured without impairing the suction force.
The material constituting the insulating organic film 40 is not particularly limited, and examples thereof include polyesters such as polyethylene terephthalate, polyolefins such as polyethylene, polyimide, polyamide, polyamideimide, polyethersulfone, polyphenylene sulfide, polyetherketone, polyetherimide, triacetylcellulose, silicone rubber, polytetrafluoroethylene, and the like. Among them, polyesters, polyolefins, polyimides, silicone rubbers, polyetherimides, polyethersulfones, and polytetrafluoroethylene are preferable, and polyimides are more preferable, because they have excellent insulating properties. Examples of the polyimide film include Kapton (trade name) manufactured by donnah dupont, Upilex (trade name) manufactured by yuken.
The thickness of the insulating organic film 40 (the first insulating organic film 41, the second insulating organic film 42) is not particularly limited, but is preferably 10 μm to 100 μm, and more preferably 10 μm to 50 μm. If the thickness of the insulating organic film 40 (the first insulating organic film 41, the second insulating organic film 42) is 10 μm or more, the insulating property can be ensured. On the other hand, when the thickness of the insulating organic film 40 (the first insulating organic film 41, the second insulating organic film 42) is 100 μm or less, sufficient adsorption force is generated.
The intermediate layer 50 preferably contains at least one of an organic insulating resin and an inorganic insulating resin, and at least one of an inorganic filler and a fibrous filler.
The organic insulating resin is not particularly limited, and examples thereof include: polyimide-based resins, epoxy-based resins, acrylic resins, and the like.
The inorganic insulating resin is not particularly limited, and examples thereof include: silane-based resins, silicone-based resins, and the like.
Preferably, the intermediate layer 50 contains polysilazane. Examples of the polysilazane include materials known in the art. The polysilazane may be an organic polysilazane or an inorganic polysilazane. These materials may be used alone or in combination of two or more.
The content of the inorganic filler in the intermediate layer 50 is preferably 100to 300 parts by mass, and more preferably 150 to 250 parts by mass, based on 100 parts by mass of polysilazane. When the content of the inorganic filler in the intermediate layer 50 is within the above range, the inorganic filler particles can form irregularities on the surface of the resin film as a cured product of the intermediate layer 50, and therefore, the powder of the thermal spraying material easily enters between the inorganic filler particles, and the thermal spraying material can be firmly adhered to the surface of the resin film.
The inorganic filler is not particularly limited, but is preferably at least one selected from the group consisting of alumina, silica, and yttria.
The inorganic filler is preferably at least one of a spherical powder and a random powder.
The spherical powder is a spherical body in which the corners of the powder particles are rounded. The irregular powder is a powder having a shape such as a crushed shape, a plate shape, a flake shape, or a needle shape, which cannot be obtained in a fixed shape.
The average particle diameter of the inorganic filler is preferably 1 to 20 μm. When the inorganic filler is a spherical powder, the diameter (outer diameter) thereof is defined as the particle diameter, and when the inorganic filler is a random powder, the longest portion of the shape thereof is defined as the particle diameter.
Preferably, the fibrous filler is at least one selected from the group consisting of plant fibers, inorganic fibers and fibrous organic resins.
The plant fiber may be paper pulp.
Examples of the inorganic fibers include fibers made of alumina.
Examples of the fiberized organic resin include fibers made of aramid, teflon (registered trademark), and the like.
The inorganic filler is preferably used in combination with a fibrous filler, and the total content of the inorganic filler and the fibrous filler is preferably 10 to 80 vol% with respect to the entire (100 vol%) of the intermediate layer 50. When the total content of the inorganic filler and the fibrous filler in the intermediate layer 50 is within the above range, the ceramic layer 60 can be uniformly formed on the intermediate layer 50 by thermal spraying.
The thickness of the intermediate layer 50 is preferably 1 μm to 40 μm, more preferably 5 μm to 20 μm. If the thickness of the intermediate layer 50 is 1 μm or more, the ceramic layer 60 can be uniformly formed on the intermediate layer 50 by thermal spraying without locally thinning the intermediate layer 50. On the other hand, when the thickness of the intermediate layer 50 is 40 μm or less, sufficient adsorption force is generated.
The material constituting the ceramic layer 60 is not particularly limited, and examples thereof include boron nitride, aluminum nitride, zirconium oxide, silicon oxide, tin oxide, indium oxide, quartz glass, soda glass, lead glass, borosilicate glass, zirconium nitride, and titanium oxide. These materials may be used alone or in combination of two or more.
These materials are preferably powders having an average particle diameter of 1 to 25 μm. By using such powder, the voids in the ceramic layer 60 can be reduced, and the withstand voltage of the ceramic layer 60 can be improved.
The thickness of the ceramic base layer 61 is preferably 10 to 80 μm, and more preferably 40 to 60 μm. When the thickness of the ceramic base layer 61 is 10 μm or more, sufficient plasma resistance and voltage resistance are exhibited. On the other hand, when the thickness of the ceramic underlayer 61 is 80 μm or less, sufficient suction force is generated.
The thickness of the ceramic surface layer 62 is preferably 5 μm to 20 μm. When the thickness of the ceramic surface layer 62 is 5 μm or more, the irregularities can be formed over the entire area of the ceramic surface layer 62. On the other hand, when the thickness of the ceramic surface layer 62 is 20 μm or less, sufficient adsorption force is generated.
The ceramic surface layer 62 can be polished to improve its adsorption force and to adjust the surface roughness Ra to the irregularities of the surface.
Here, the surface roughness Ra means a value measured by a method prescribed in JIS B0601-1994.
The surface roughness Ra of the ceramic surface layer 62 is preferably 0.05 μm to 0.5. mu.m. When the surface roughness Ra of the ceramic surface layer 62 is within the above range, the adherend can be favorably adsorbed. When the surface roughness Ra of the ceramic surface layer 62 is increased, the contact area between the adherend and the ceramic surface layer 62 is reduced, and hence the adsorption force is also reduced.
The electrostatic chuck apparatus 1 according to the present embodiment described above includes: a plurality of internal electrodes 20; insulating organic films 40 provided on both sides in the thickness direction of the internal electrodes 20; and a ceramic layer 60 laminated on the upper surface 2a in the thickness direction of the laminate 2 including at least the internal electrodes 20 and the insulating organic film 40 with the intermediate layer 50 interposed therebetween. Therefore, plasma resistance and voltage resistance can be improved at least on the upper surface 2a side in the thickness direction of the laminate 2, and abnormal discharge during use can be suppressed. Therefore, the electrostatic chuck apparatus 1 of the present embodiment is also excellent in adsorptivity.
In the electrostatic chuck apparatus 1 according to the present embodiment, when the ceramic layer 60 covers the entire outer surface of the laminate 2 with the interlayer 50 interposed therebetween, plasma resistance and voltage resistance can be improved on the upper surface 2a side and the side surface 2b side of the laminate 2, and abnormal discharge during use can be suppressed. Therefore, the electrostatic chuck apparatus 1 of the present embodiment is also further excellent in adsorptivity.
In the electrostatic chuck device 1 of the present embodiment, the ceramic layer 60 includes: a ceramic base layer 61; and a ceramic surface layer 62 formed on the upper surface 61a of the ceramic base layer 61 and having irregularities, whereby the adsorption force can be controlled to a desired level.
In the electrostatic chuck apparatus 1 according to the present embodiment, the intermediate layer 50 includes at least one of an organic insulating resin and an inorganic insulating resin, and at least one of an inorganic filler and a fibrous filler, and thus the ceramic layer 60 can be uniformly formed on the intermediate layer 50.
In the electrostatic chuck apparatus 1 according to the present embodiment, the inorganic filler is at least one of spherical powder and irregular powder, and thus can be designed to be mixed so that the filling state in the resin of the intermediate layer 50 is uniformly dispersed or most densely filled, and also can be designed so that a part of the filler is exposed from the resin, and thus, the adhesion to the ceramic base layer 61 can be improved.
In the electrostatic chuck apparatus 1 according to the present embodiment, the fibrous filler is at least one selected from the group consisting of plant fibers, inorganic fibers, and fibrous organic resins, and thereby the strength and toughness of the intermediate layer 50 are improved, the adhesion to the ceramic base layer 61 by disposing the fibers on the surface of the intermediate layer 50 is improved, and the deformation caused by the difference in thermal expansion coefficient between the ceramic base layer 61 and the insulating organic film 40 across the intermediate layer 50 is alleviated.
In the electrostatic chuck apparatus 1 of the present embodiment, the insulating organic film is a polyimide film, and thus the withstand voltage is improved.
In the electrostatic chuck apparatus 1 of the present embodiment, the inorganic filler composed of the spherical powder and the irregular powder is at least one selected from the group consisting of alumina, silica, and yttria, thereby improving the plasma resistance and the voltage resistance.
[ method for manufacturing Electrostatic chuck ]
Referring to fig. 1, a method of manufacturing the electrostatic chuck apparatus 1 according to the present embodiment will be described.
A metal such as copper is deposited on the surface 41a of the first insulating organic film 41 (the upper surface of the first insulating organic film 41 in the thickness direction) to form a metal film. Then, etching is performed to pattern the metal film into a predetermined shape, thereby forming the first internal electrode 21 and the second internal electrode 22.
Next, a second insulating organic film 42 is bonded to the upper surface 20a of the internal electrode 20 via the second adhesive layer 32.
Next, a laminate composed of the first insulating organic film 41, the internal electrodes 20, the second adhesive layer 32, and the second insulating organic film 42 is bonded to the front surface 10a of the substrate 10 via the first adhesive layer 31 so that the lower surface 41b of the first insulating organic film 41 is positioned on the front surface 10a side of the substrate 10.
Next, the intermediate layer 50 is formed so as to cover the entire outer surface of the laminate 2 including the internal electrodes 20 and the insulating organic film 40.
The method for forming the intermediate layer 50 is not particularly limited as long as the intermediate layer 50 can be formed so as to cover the entire outer surface of the laminated body 2. Examples of a method for forming the intermediate layer 50 include a bar coating method, a spin coating method, and a spray coating method.
Next, the ceramic base layer 61 is formed so as to cover the entire outer surface of the intermediate layer 50.
Examples of the method for forming the ceramic base layer 61 include: a method in which a slurry containing a material constituting the ceramic base layer 61 is applied to the entire outer surface of the intermediate layer 50 and sintered to form the ceramic base layer 61; and a method of forming the ceramic base layer 61 by spraying a material constituting the ceramic base layer 61 over the entire outer surface of the intermediate layer 50.
Here, the thermal spraying is a method of forming a film by heating and melting a material to be a coating layer (in the present embodiment, the ceramic base layer 61), and then injecting the material into an object to be processed using a compressed gas.
Next, the ceramic surface layer 62 is formed on the upper surface 61a of the ceramic base layer 61.
Examples of the method for forming the ceramic surface layer 62 include: a method of forming the ceramic surface layer 62 by applying a mask having a predetermined shape to the upper surface 61a of the ceramic base layer 61 and then spraying a material constituting the ceramic surface layer 62 onto the upper surface 61a of the ceramic base layer 61; a method of forming the ceramic surface layer 62 by thermally spraying a material constituting the ceramic surface layer 62 on the entire upper surface 61a of the ceramic base layer 61, and then cutting the ceramic surface layer 62 by blast processing to form the ceramic surface layer 62 into an uneven shape.
Through the above steps, the electrostatic chuck apparatus 1 according to the present embodiment can be manufactured.
Examples
The present invention will be described in more detail below with reference to examples and comparative examples, but the present invention is not limited to the following examples.
[ example 1]
Copper was plated to a thickness of 9 μm on one surface of a polyimide film (trade name: Kapton, made by du pont) having a film thickness of 12.5 μm as the first insulating organic film 41. After a photoresist is applied to the surface of the copper foil, a pattern is exposed and then a developing process is performed, and unnecessary copper foil is removed by etching. Then, the copper foil on the polyimide film was cleaned to remove the photoresist, thereby forming the first and second internal electrodes 21 and 22. An insulating adhesive sheet that is semi-cured by drying and heating is laminated as the second adhesive layer 32 on the first inner electrodes 21 and the second inner electrodes 22. As the insulating adhesive sheet, a sheet-shaped material obtained by mixing and dissolving 27 parts by mass of bismaleimide resin, 3 parts by mass of diaminosiloxane, 20 parts by mass of resol, 10 parts by mass of biphenyl epoxy resin, and 240 parts by mass of ethyl acrylate-butyl acrylate-acrylonitrile copolymer in an appropriate amount of tetrahydrofuran was used. Then, a polyimide film (trade name: Kapton, manufactured by Toledu Pont) having a film thickness of 12.5 μm was attached as the second insulating organic film 42 to obtain a laminate bonded by heat treatment. The thickness of second adhesive layer 32 after drying was 20 μm.
Further, a sheet composed of an insulating adhesive having the same composition as the semi-cured insulating adhesive sheet is laminated as the first adhesive layer 31 on the surface of the first insulating organic film 41 of the laminate opposite to the surface on which the first and second internal electrodes 21 and 22 are formed. Then, the laminate was bonded to the aluminum substrate 10 and bonded thereto by heat treatment. The thickness of the dried first adhesive layer 31 was 10 μm.
Then, 100 parts by mass of polysilazane and 200 parts by mass of an inorganic filler (average particle diameter: 3 μm) composed of alumina were mixed with butyl acetate as a diluting medium, and the inorganic filler was uniformly dispersed by an ultrasonic disperser to prepare a coating material.
Next, the surface of the second insulating organic film 42 of the laminate bonded to the substrate 10 and the side surface of the laminate 2 are sprayed with the paint, and then heated and dried to form the intermediate layer 50. The thickness of the dried intermediate layer 50 on the surface of the second insulating organic film 42 was 10 μm.
Next, alumina (Al) was sprayed to the entire surface of the intermediate layer 50 by plasma spraying2O3) The powder of (4) (average particle diameter: 8 μm) to form a ceramic base layer 61 having a thickness of 50 μm.
Next, a mask having a predetermined shape is applied to the surface of the ceramic base layer 61, and then the above-mentioned alumina (Al) is thermally sprayed on the surface of the ceramic base layer 612O3) The powder of (4) (average particle diameter: 8 μm) to form a ceramic having a thickness of 15 μmA skin layer 62.
Next, the adsorption surface of the ceramic surface layer 62 adsorbing the adsorbate was subjected to surface grinding by a diamond grinding wheel to obtain the electrostatic chuck device of example 1.
The surface roughness Ra of the surface of the obtained electrostatic chuck device was measured in accordance with JIS B0601-1994 to be 0.3. mu.m.
[ example 2]
An electrostatic chuck device of example 2 was obtained in the same manner as in example 1, except that in example 1, the thickness of the first insulating organic film 41 and the thickness of the second insulating organic film 42 were changed to 25 μm.
[ example 3]
An electrostatic chuck device of example 3 was obtained in the same manner as in example 1, except that in example 1, the thickness of the first insulating organic film 41 and the thickness of the second insulating organic film 42 were changed to 38 μm, the thickness of the second adhesive layer 32 was changed to 10 μm, and the thickness of the first internal electrode 21 and the thickness of the second internal electrode 22 were changed to 5 μm.
Comparative example 1
An electrostatic chuck device of comparative example 1 was obtained in the same manner as in example 1, except that in example 1, the thickness of the first insulating organic film 41 and the thickness of the second insulating organic film 42 were changed to 50 μm, the thickness of the ceramic base layer 61 was changed to 30 μm, the thickness of the intermediate layer 50 was changed to 15 μm, the thickness of the first internal electrode 21 and the thickness of the second internal electrode 22 were changed to 5 μm, and the thickness of the first adhesive layer 31 was changed to 20 μm.
Comparative example 2
An electrostatic chuck device of comparative example 2 was obtained in the same manner as in comparative example 1, except that the thickness of the ceramic base layer 61 was changed to 50 μm in comparative example 1.
Comparative example 3
An electrostatic chuck device of comparative example 3 was obtained in the same manner as in comparative example 2, except that in comparative example 2, the thickness of the ceramic surface layer 62 was changed to 20 μm, the thickness of the ceramic base layer 61 was changed to 80 μm, and the thickness of the intermediate layer 50 was changed to 30 μm.
Comparative example 4
Except that in comparative example 3, alumina (Al) was directly sprayed by plasma spraying onto the surface of the second insulating organic film 42 so as not to provide the intermediate layer 502O3) The powder of (4) (average particle diameter: 8 μm), in the same manner as in comparative example 3, an electrostatic chuck device of comparative example 4 was obtained.
Table 1 shows the thicknesses of the respective layers and the total values thereof of the electrostatic chuck apparatuses obtained in examples 1 to 3 and comparative examples 1 to 4.
[ Table 1]
Next, the electrostatic chuck apparatuses obtained in examples 1 to 3 and comparative examples 1 to 4 were used to evaluate the withstand voltage characteristics, the adsorption force, and the plasma resistance. The results are shown in table 2.
[ evaluation items ]
< Voltage withstanding characteristics >
The withstand voltage characteristics were evaluated by applying a voltage of ± 2.5kV to the first internal electrode 21 and the second internal electrode 22 of the electrostatic chuck device by a high-voltage power supply device under vacuum (10Pa) and holding for 2 minutes. The absence of change was regarded as "acceptable" when observed by visual observation during 2 minutes, and the occurrence of dielectric breakdown of the electrodes or the insulating organic film and the ceramic layer was regarded as "unacceptable".
< adsorption force >
The suction force was applied to the surface of the electrostatic chuck apparatus under vacuum (10Pa or less) using a dummy wafer made of silicone as an adherend, and a voltage of ± 2.5kV was applied to the first internal electrode 21 and the second internal electrode 22, followed by holding for 30 seconds. Helium gas was flowed through a through hole provided in the substrate 10 while maintaining the applied voltage, and the amount of leakage of helium gas was measured while increasing the air pressure. The dummy wafer that was stably sucked at an air pressure of 100Torr was regarded as "good" and the dummy wafer that was not stably sucked was regarded as "bad". The stable adsorption means that the phenomenon that the helium leakage amount is increased sharply because the wafer is floated by increasing the helium pressure is not generated.
< plasma resistance >
For plasma resistance, the electrostatic chuck device was set in a parallel-plate type RIE apparatus, and then, under vacuum (20Pa or less), oxygen gas (10sccm) and carbon tetrafluoride gas (40sccm) were introduced from a high-frequency power supply (output 250W), and a change in the surface state of the electrostatic chuck device after 24-hour exposure was observed visually. The ceramic layer remaining on the entire surface was regarded as "acceptable", and the insulating organic film exposed by the disappearance of a part of the ceramic layer was regarded as "unacceptable".
[ Table 2]
| Example 1 | Example 2 | Example 3 | Comparative example 1 | Comparative example 2 | Comparative example 3 | Comparative example 4 | |
| Withstand voltage characteristic | Qualified | Qualified | Qualified | Qualified | Qualified | Qualified | Qualified |
| Adsorption power | Qualified | Qualified | Qualified | Qualified | Fail to be qualified | Fail to be qualified | Fail to be qualified |
| Plasma resistance | Qualified | Qualified | Qualified | Fail to be qualified | Qualified | Qualified | Fail to be qualified |
As is clear from table 2, the electrostatic chuck devices obtained in examples 1 to 3 were films having a distance of 200 μm or less from the surface 10a of the substrate 10 to the surface of the ceramic surface layer 62, but were confirmed to have excellent withstand voltage characteristics and plasma resistance, and as a result, had excellent chucking power.
On the other hand, the ceramic base layer 61 of the electrostatic chuck apparatus obtained in comparative example 1 was thin, and thus sufficient plasma resistance could not be obtained. Since the distance from the surface 10a of the substrate 10 to the surface of the ceramic surface layer 62 of the electrostatic chuck apparatuses obtained in comparative examples 2 and 3 exceeded 200 μm, it was confirmed that the adsorption force was poor.
In addition, since the electrostatic chuck device obtained in comparative example 4 does not have the intermediate layer 50, it was confirmed that the ceramic sprayed material did not sufficiently adhere to the surface of the second insulating organic film 42, and plasma resistance was poor.
Industrial applicability
According to the electrostatic chuck apparatus of the present invention, the ceramic layer is laminated on the upper surface in the thickness direction of the laminate including the internal electrode and the insulating organic film provided on both sides in the thickness direction thereof via the intermediate layer, whereby a high adsorption force can be obtained while having excellent plasma resistance and withstand voltage characteristics. Therefore, according to the electrostatic chuck apparatus of the present invention, a conductor or a semiconductor such as a wafer for a dry etching apparatus in a semiconductor manufacturing process can be stably electrostatically attracted and held.
Description of reference numerals:
1: an electrostatic chuck device; 2: a laminate; 10: a substrate; 20: an internal electrode; 21: a first internal electrode; 22: a second internal electrode; 30: an adhesive layer; 31: a first adhesive layer; 32: a second adhesive layer; 40: an insulating organic film; 41: a first insulating organic film; 42: a second insulating organic film; 50: an intermediate layer; 60: a ceramic layer; 61: a ceramic substrate layer; 62: a ceramic surface layer.
Claims (9)
1. An electrostatic chuck device, comprising:
a plurality of internal electrodes;
insulating organic films provided on both sides in the thickness direction of the internal electrodes; and
and a ceramic layer laminated on an upper surface in a thickness direction of a laminate including at least the internal electrode and the insulating organic film with an intermediate layer interposed therebetween.
2. The electrostatic chucking device as claimed in claim 1,
the ceramic layer covers the entire outer surface of the laminate with the intermediate layer interposed therebetween.
3. The electrostatic chucking device as claimed in claim 1 or 2,
the ceramic layer has: a base layer; and a surface layer formed on the upper surface of the base layer and having irregularities.
4. The electrostatic chucking device as claimed in any one of claims 1 to 3,
the intermediate layer includes: at least one of an organic insulating resin and an inorganic insulating resin, and at least one of an inorganic filler and a fibrous filler.
5. The electrostatic chucking device as claimed in claim 4,
the inorganic filler is at least one of spherical powder and irregular powder.
6. The electrostatic chucking device as claimed in claim 5,
the spherical powder and the irregular powder are at least one selected from the group consisting of alumina, silica, and yttria.
7. The electrostatic chucking device as claimed in any one of claims 4 to 6,
the fibrous filler is at least one selected from the group consisting of plant fibers, inorganic fibers and fibrous organic resins.
8. The electrostatic chucking device as claimed in any one of claims 1 to 7,
the insulating organic film is a polyimide film.
9. The electrostatic chucking device as claimed in any one of claims 1 to 8,
the insulating organic film is composed of a first insulating organic film provided on a lower surface side in a thickness direction of the internal electrode and a second insulating organic film provided on an upper surface side in the thickness direction of the internal electrode,
a first adhesive layer is provided on a surface of the first insulating organic film on a side opposite to the internal electrodes,
a second adhesive layer is provided between the first insulating organic film and the second insulating organic film and between the internal electrode provided on the upper surface side in the thickness direction of the first insulating organic film and the second insulating organic film,
the total of the thickness of the first adhesive layer, the thickness of the first insulating organic film, the thickness of the internal electrode, the thickness of the second adhesive layer, the thickness of the second insulating organic film, the thickness of the intermediate layer, and the thickness of the ceramic layer is 200 μm or less.
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| CN202411064327.5A CN118919477A (en) | 2018-12-27 | 2019-12-25 | Electrostatic chuck device |
| CN202411064320.3A CN118919476A (en) | 2018-12-27 | 2019-12-25 | Electrostatic chuck device |
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| JP2018-244941 | 2018-12-27 | ||
| JP2018244941 | 2018-12-27 | ||
| PCT/JP2019/050846 WO2020138179A1 (en) | 2018-12-27 | 2019-12-25 | Electrostatic chuck device |
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| CN202411064320.3A Division CN118919476A (en) | 2018-12-27 | 2019-12-25 | Electrostatic chuck device |
| CN202411064327.5A Division CN118919477A (en) | 2018-12-27 | 2019-12-25 | Electrostatic chuck device |
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| CN201980086522.9A Active CN113228495B (en) | 2018-12-27 | 2019-12-25 | Electrostatic chuck device |
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| KR (1) | KR102481728B1 (en) |
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| JPH10261697A (en) * | 1997-03-19 | 1998-09-29 | Kobe Steel Ltd | Electrostatic chuck |
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| TW202034443A (en) | 2020-09-16 |
| CN118919477A (en) | 2024-11-08 |
| JP7256310B2 (en) | 2023-04-11 |
| JP7335371B2 (en) | 2023-08-29 |
| WO2020138179A1 (en) | 2020-07-02 |
| JP2022058894A (en) | 2022-04-12 |
| JP2022058893A (en) | 2022-04-12 |
| JP2022058892A (en) | 2022-04-12 |
| JP7100716B2 (en) | 2022-07-13 |
| KR102481728B1 (en) | 2022-12-29 |
| CN118919476A (en) | 2024-11-08 |
| KR20210013729A (en) | 2021-02-05 |
| TWI813840B (en) | 2023-09-01 |
| JPWO2020138179A1 (en) | 2021-09-09 |
| JP7256311B2 (en) | 2023-04-11 |
| CN113228495B (en) | 2024-11-29 |
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