CN113220060B - Band-gap reference circuit with high power supply rejection ratio and electronic equipment - Google Patents
Band-gap reference circuit with high power supply rejection ratio and electronic equipment Download PDFInfo
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- CN113220060B CN113220060B CN202110480027.5A CN202110480027A CN113220060B CN 113220060 B CN113220060 B CN 113220060B CN 202110480027 A CN202110480027 A CN 202110480027A CN 113220060 B CN113220060 B CN 113220060B
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- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
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- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is DC
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
The invention provides a band-gap reference circuit with a high power supply rejection ratio and electronic equipment, wherein the band-gap reference circuit with the high power supply rejection ratio comprises a starting circuit, a reference current generating circuit and a band-gap reference core circuit, the band-gap reference core circuit comprises a first electronic switching tube, a first mirror image circuit, a second mirror image circuit and an operational amplifier, the first mirror image circuit generates positive temperature coefficient current irrelevant to power supply voltage, meanwhile, the second mirror image circuit, the operational amplifier and the first electronic switching tube generate positive temperature coefficient voltage and negative temperature coefficient voltage, and then the reference current irrelevant to temperature coefficient is output, so that lower temperature coefficient parameters are obtained, higher power supply rejection ratio is obtained, and the influence of noise on the circuit is reduced.
Description
Technical Field
The invention belongs to the technical field of power electronics, and particularly relates to a band-gap reference circuit with a high power supply rejection ratio and electronic equipment.
Background
The bandgap reference circuit is an extremely important circuit module in the design of integrated circuits, and has outstanding advantages almost irrelevant to power supply voltage, process and temperature change, so the bandgap reference circuit is widely applied to LDO (low dropout regulator), radio frequency circuits, high-precision A/D (analog/digital) converters, D/A converters and hybrid integrated circuits. The development of such circuits puts very high demands on the noise of the bandgap reference, the power supply ripple rejection ratio, the starting speed and the like.
Fig. 1 shows a structure of a conventional bandgap reference circuit, in which the output voltage of the conventional bandgap reference circuit includes noise from an operational amplifier, a resistor, and the like, and the total output noise is large, which limits the application of the bandgap reference circuit in a chip system such as an LDO.
Meanwhile, considering that the input voltage range of the LDO is wide, in order to ensure the working stability and consistency of the chip, the on-chip voltage reference source is required to be insensitive to the change of the power supply voltage, so that the band gap reference with low temperature drift and high power supply rejection ratio needs to be designed to meet the system performance.
Disclosure of Invention
The invention aims to provide a band-gap reference circuit with a high power supply rejection ratio, and aims to solve the problems of high noise and low power supply rejection ratio of the conventional band-gap reference circuit.
The first aspect of the embodiment of the invention provides a band-gap reference circuit with a high power supply rejection ratio, which comprises a starting circuit, a reference current generating circuit and a band-gap reference core circuit, wherein the band-gap reference core circuit comprises a first electronic switching tube, a first mirror image circuit, a second mirror image circuit and an operational amplifier;
the source electrode of the first electronic switching tube, the power supply end of the starting circuit and the power supply end of the reference current generating circuit are connected in common and used for inputting power supply voltage, the drain electrode of the first electronic switching tube is grounded through the first mirror image circuit and the second mirror image circuit respectively, the drain electrode of the first electronic switching tube is also connected with the controlled end of the reference current generating circuit, the input end of the operational amplifier is connected with the output end of the first mirror image circuit, the output end of the operational amplifier is connected with the grid electrode of the first electronic switching tube, and the first signal output end of the starting circuit is connected with the controlled end of the first mirror image circuit;
the starting circuit is used for starting when the power supply voltage reaches a first preset voltage, outputting a starting voltage to the first mirror image circuit, and turning off when the second mirror image circuit generates a reference voltage;
the first mirror image circuit is used for being conducted and generating positive temperature coefficient current when receiving the starting voltage, and controlling the conduction of the first electronic switching tube through the output trigger voltage of the operational amplifier, so that the reference current generating circuit outputs bias current to the operational amplifier and outputs reference current;
the operational amplifier is used for clamping the voltage of the output end of the first mirror image circuit when receiving the bias current so as to mirror the positive temperature coefficient current on the second mirror image circuit to generate the positive temperature coefficient current;
the second mirror image circuit is used for generating positive temperature coefficient voltage according to the positive temperature coefficient current and generating the reference voltage after being superposed with negative temperature coefficient voltage generated by grounding.
In one embodiment, the first mirror circuit comprises a second electronic switch tube, a third electronic switch tube, a fourth electronic switch tube, a fifth electronic switch tube, a first triode, a second triode and a first resistor;
the source of the second electronic switch tube and the source of the third electronic switch tube are connected in common and connected with the drain of the first electronic switch tube, the gate of the second electronic switch tube, the gate of the third electronic switch tube, the drain of the second electronic switch tube and the drain of the fourth electronic switch tube are connected in common to form the first output end of the first mirror circuit and connected with the non-inverting input end of the operational amplifier, the drain of the third electronic switch tube, the gate of the fourth electronic switch tube, the drain of the fifth electronic switch tube and the gate of the fifth electronic switch tube are connected in common to form the second output end and the controlled end of the first mirror circuit and connected with the inverting input end of the operational amplifier, the source of the fourth electronic switch tube is connected with the first end of the first resistor, and the second end of the first resistor is connected with the emitter of the first triode, and the source electrode of the fifth electronic switching tube is connected with the emitter electrode of the second triode, and the collector electrode of the first triode, the base electrode of the first triode, the collector electrode of the second triode and the base electrode of the second triode are all grounded.
In one embodiment, the second mirror circuit comprises a sixth electronic switching tube, a second resistor and a third triode;
the source electrode of the sixth electronic switching tube is connected with the drain electrode of the first electronic switching tube, the grid electrode of the sixth electronic switching tube is connected with the grid electrode of the second electronic switching tube, the drain electrode of the sixth electronic switching tube and the first end of the second resistor are connected in common to form the reference voltage output end of the band-gap reference circuit with the high power supply rejection ratio, the second end of the second resistor is connected with the emitting electrode of the third triode, and the base electrode of the third triode and the collector electrode of the third triode are both grounded.
In one embodiment, the starting circuit further includes a second output terminal, the second output terminal of the starting circuit is connected to the signal terminal of the reference current generating circuit, and the starting circuit includes a seventh electronic switching tube, an eighth electronic switching tube, a ninth electronic switching tube, a tenth electronic switching tube, an eleventh electronic switching tube, a twelfth electronic switching tube and a thirteenth electronic switching tube;
a source of the seventh electronic switch tube, a source of the eleventh electronic switch tube, a source of the twelfth electronic switch tube, and a source of the thirteenth electronic switch tube are connected to form a power source of the start circuit, a gate of the seventh electronic switch tube, a drain of the eleventh electronic switch tube, a gate of the twelfth electronic switch tube, a gate of the thirteenth electronic switch tube, and a source of the eighth electronic switch tube are interconnected, a gate of the eleventh electronic switch tube is connected to the second signal output terminal of the reference current generating circuit, a drain of the eighth electronic switch tube is connected to the source of the ninth electronic switch tube, a drain of the ninth electronic switch tube is connected to the source of the tenth electronic switch tube, and a drain of the tenth electronic switch tube, a gate of the eighth electronic switch tube, and a source of the thirteenth electronic switch tube are connected to form a power source of the start circuit, The grid electrode of the ninth electronic switching tube and the grid electrode of the tenth electronic switching tube are connected in common and grounded, the drain electrode of the twelfth electronic switching tube is connected with the grid electrode of the fourth electronic switching tube, and the drain electrode of the thirteenth electronic switching tube is connected with the signal end of the reference current generating circuit.
In one embodiment, the reference current generating circuit includes a fourteenth electronic switching tube, a fifteenth electronic switching tube, a sixteenth electronic switching tube, a seventeenth electronic switching tube, an eighteenth electronic switching tube, a nineteenth electronic switching tube, a twentieth electronic switching tube, a twenty-first electronic switching tube, a twenty-second electronic switching tube, a twenty-third electronic switching tube, a twenty-fourth electronic switching tube, a twenty-fifth electronic switching tube, a twenty-sixth electronic switching tube, a twenty-seventh electronic switching tube, a twenty-eighth electronic switching tube, a twenty-ninth electronic switching tube, a thirty-fourth electronic switching tube, a thirty-fifth electronic switching tube, a thirty-sixth electronic switching tube and a thirty-seventh electronic switching tube;
a source electrode of the fourteenth electronic switching tube is connected with a drain electrode of the first electronic switching tube, a gate electrode of the fourteenth electronic switching tube is connected with a gate electrode of the second electronic switching tube, a drain electrode of the fourteenth electronic switching tube, a drain electrode of the twenty-seventh electronic switching tube, a gate electrode of the thirty-second electronic switching tube, a gate electrode of the thirty-third electronic switching tube, a gate electrode of the thirty-fourth electronic switching tube, a gate electrode of the thirty-fifth electronic switching tube and a gate electrode of the thirty-sixth electronic switching tube are interconnected, a source electrode of the twenty-seventh electronic switching tube is connected with a drain electrode of the thirty-second electronic switching tube, a source electrode of the thirty-third electronic switching tube, a source electrode of the thirty-fourth electronic switching tube, a source electrode of the thirty-fifth electronic switching tube and a source electrode of the thirty-sixth electronic switching tube are all grounded, a source electrode of the fifteenth electronic switch tube, a source electrode of the sixteenth electronic switch tube, a source electrode of the seventeenth electronic switch tube, a source electrode of the eighteenth electronic switch tube, a source electrode of the nineteenth electronic switch tube, a source electrode of the twentieth electronic switch tube, a source electrode of the twenty first electronic switch tube, and a source electrode of the thirty seventh electronic switch tube are connected in common to form a power supply terminal of the reference current generating circuit, a gate electrode of the fifteenth electronic switch tube, a drain electrode of the fifteenth electronic switch tube, a gate electrode of the sixteenth electronic switch tube, a gate electrode of the seventeenth electronic switch tube, a gate electrode of the eighteenth electronic switch tube, a drain electrode of the thirty third electronic switch tube, and a gate electrode of the eleventh electronic switch tube are interconnected, a drain electrode of the sixteenth electronic switch tube, a drain electrode of the twenty sixth electronic switch tube, a source electrode of the seventeenth electronic switch tube, a source electrode of the eighteenth electronic switch tube, a source electrode of the fifteenth electronic switch tube, a source electrode of the nineteenth electronic switch tube, a source electrode of the fifteenth electronic switch tube, a source electrode of the sixteenth electronic switch tube, a source electrode of the seventeenth electronic switch tube, a source electrode of the reference current source electrode of the reference current source, and a source of the reference current source of the reference current source, The grid electrode of the twenty-sixth electronic switching tube, the grid electrode of the twenty-seventh electronic switching tube, the grid electrode of the twenty-eighth electronic switching tube, the grid electrode of the twenty-ninth electronic switching tube, the grid electrode of the thirty-seventh electronic switching tube, the grid electrode of the thirty-eleventh electronic switching tube and the drain electrode of the thirteenth electronic switching tube are interconnected, the source electrode of the twenty-eighth electronic switching tube is grounded, the drain electrode of the seventeenth electronic switching tube, the drain electrode of the twenty-ninth electronic switching tube and the output end of the operational amplifier are interconnected, the source electrode of the twenty-ninth electronic switching tube and the drain electrode of the thirty-fourth electronic switching tube are connected, the drain electrode of the eighteenth electronic switching tube is used for outputting the bias current, the grid electrode of the twenty-first electronic switching tube, the grid electrode of the twenty-second electronic switching tube, the grid electrode of the twenty-third electronic switching tube, the grid electrode of the twenty-eighth electronic switching tube, the gate electrode of the twenty-eighth electronic switching tube, the gate electrode of the operational amplifier, and the operational amplifier, The grid electrode of the twenty-fourth electronic switching tube, the grid electrode of the twenty-fifth electronic switching tube, the drain electrode of the twenty-fifth electronic switching tube and the drain electrode of the thirty-third electronic switching tube are interconnected, the drain electrode of the twenty-first electronic switching tube is connected with the source electrode of the twenty-fifth electronic switching tube, the source electrode of the thirty-fifth electronic switching tube is connected with the drain electrode of the thirty-fifth electronic switching tube, the grid electrode of the nineteenth electronic switching tube, the grid electrode of the twentieth electronic switching tube, the grid electrode of the thirty-seventh electronic switching tube, the drain electrode of the twenty-second electronic switching tube and the drain electrode of the thirty-first electronic switching tube are interconnected, the drain electrode of the nineteenth electronic switching tube is connected with the source electrode of the twenty-second electronic switching tube, and the drain electrode of the twentieth electronic switching tube is connected with the source electrode of the twenty-third electronic switching tube, the drain electrode of the thirty-seventh electronic switching tube is connected with the source electrode of the twenty-fourth electronic switching tube, the source electrode of the twenty-sixth electronic switching tube is connected with the drain electrode of the twenty-eighth electronic switching tube, the source electrode of the thirty-eleventh electronic switching tube is connected with the drain electrode of the thirty-sixth electronic switching tube, the drain electrode of the twenty-third electronic switching tube is used for outputting a first reference current, and the drain electrode of the twenty-fourth electronic switching tube is used for outputting a second reference current.
In one embodiment, the calculation formula of the positive temperature coefficient current is as follows:
wherein R1 is the resistance value of the first resistor, V T KT/q, K being the boltzmann constant, T being the temperature, q being the electronic charge, N being the size ratio of the first and second transistors;
the calculation formula of the reference voltage is as follows:
VBE is the voltage difference between the base and the emitter of the third electronic switching tube, and R2 is the resistance of the second resistor.
In one embodiment, N is equal to 10.
In one embodiment, the first electronic switch tube, the second electronic switch tube, the third electronic switch tube, a sixth electronic switch tube, the seventh electronic switch tube, the eighth electronic switch tube, the ninth electronic switch tube, the tenth electronic switch tube, the eleventh electronic switch tube, the twelfth electronic switch tube, the thirteenth electronic switch tube, the fourteenth electronic switch tube, the fifteenth electronic switch tube, the sixteenth electronic switch tube, the seventeenth electronic switch tube, the eighteenth electronic switch tube, the nineteenth electronic switch tube, the twentieth electronic switch tube, the twenty-first electronic switch tube, the twenty-second electronic switch tube, the twenty-third electronic switch tube, the twenty-fourth electronic switch tube, the twenty-fifth electronic switch tube, the twenty-sixth electronic switch tube, and the thirty-seventh electronic switch tube are PMOS tubes, the fourth electronic switching tube, the fifth electronic switching tube, the twenty-seventh electronic switching tube, the twenty-eighth electronic switching tube, the twenty-ninth electronic switching tube, the thirty-fourth electronic switching tube, the thirty-eleventh electronic switching tube, the thirty-second electronic switching tube, the thirty-third electronic switching tube, the thirty-fourth electronic switching tube, the thirty-fifth electronic switching tube and the thirty-sixth electronic switching tube are NMOS tubes.
In one embodiment, the first transistor, the second transistor, and the third transistor are PNP transistors.
A second aspect of an embodiment of the present invention provides an electronic apparatus including the bandgap reference circuit with a high power supply rejection ratio as described above.
Compared with the prior art, the embodiment of the invention has the following beneficial effects: the band-gap reference circuit with the high power supply rejection ratio comprises a first electronic switching tube, a first mirror image circuit, a second mirror image circuit and an operational amplifier, wherein the first mirror image circuit generates positive temperature coefficient current irrelevant to power supply voltage, and meanwhile, the second mirror image circuit, the operational amplifier and the first electronic switching tube generate positive temperature coefficient voltage and negative temperature coefficient voltage, so that reference current irrelevant to temperature coefficient is output, and therefore, a lower temperature coefficient parameter is obtained, a higher power supply rejection ratio is obtained, and the influence of noise on the circuit is reduced.
Drawings
FIG. 1 is a schematic diagram of a conventional bandgap reference circuit;
fig. 2 is a schematic diagram of a first structure of a bandgap reference circuit with a high power supply rejection ratio according to an embodiment of the present invention;
fig. 3 is a schematic diagram of a second structure of a bandgap reference circuit with a high power supply rejection ratio according to an embodiment of the present invention.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
Example one
The first aspect of the embodiments of the present invention provides a bandgap reference circuit with a high power supply rejection ratio.
As shown in fig. 2, fig. 2 is a schematic diagram of a first structure of a bandgap reference circuit with a high power supply rejection ratio according to an embodiment of the present invention, where the bandgap reference circuit with a high power supply rejection ratio includes a start circuit 10, a reference current generating circuit 30, and a bandgap reference core circuit 20, and the bandgap reference core circuit 20 includes a first electronic switching transistor Q1, a first mirror circuit 21, a second mirror circuit 22, and an operational amplifier OP 1;
the source of the first electronic switching tube Q1, the power supply end of the starting circuit 10 and the power supply end of the reference current generating circuit 30 are connected in common and used for inputting power supply voltage, the drain of the first electronic switching tube Q1 is grounded through the first mirror image circuit 21 and the second mirror image circuit 22 respectively, the drain of the first electronic switching tube Q1 is also connected with the controlled end of the reference current generating circuit 30, the input end of the operational amplifier OP1 is connected with the output end of the first mirror image circuit 21, the output end of the operational amplifier OP1 is connected with the gate of the first electronic switching tube Q1, and the first signal output end of the starting circuit 10 is connected with the controlled end of the first mirror image circuit 21;
a start circuit 10 for starting when the power supply voltage reaches a first preset voltage, outputting a start voltage to the first mirror circuit 21, and turning off when the second mirror circuit 22 generates a reference voltage;
the first mirror circuit 21 is used for conducting and generating a positive temperature coefficient current when receiving the starting voltage, and outputting a trigger voltage through the operational amplifier OP1 to control the conduction of the first electronic switch Q1, so that the reference current generating circuit 30 outputs a bias current to the operational amplifier OP1 and outputs a reference current;
an operational amplifier OP1 for clamping the voltage at the output terminal of the first mirror circuit 21 when receiving the bias current, so as to mirror the positive temperature coefficient current on the second mirror circuit 22 to generate the positive temperature coefficient current;
and the second mirror image circuit 22 is used for generating positive temperature coefficient voltage according to the positive temperature coefficient current and generating reference voltage after being superposed with negative temperature coefficient voltage generated by grounding.
In this embodiment, the bandgap reference core circuit 20 is biased by the reference current generating circuit 30 to provide a bias current for outputting a reference voltage unrelated to the power voltage, when the power voltage is initially powered up, the start circuit 10 is kept in an off state, when the power voltage rises to the start voltage of the start circuit 10, the start circuit 10 is turned on, and when the power voltage rises gradually and rises to a first preset voltage, the start circuit 10 triggers and outputs the start voltage to the first mirror circuit 21, thereby triggering the first mirror circuit 21 to generate a positive temperature coefficient current, which is determined by the size of the switching tube inside the first mirror circuit 21, meanwhile, the voltage output to the input end of the operational amplifier OP1 changes, the output voltage of the operational amplifier OP1 changes, and the output trigger voltage controls the conduction of the first electronic switching tube Q1, at this time, the power supply voltage is output to the first mirror image circuit 21, the second mirror image circuit 22 and the reference current generating circuit 30 through the first electronic switching tube Q1, the reference current generating circuit 30 is triggered to work, and outputs the bias current to the operational amplifier OP1, the operational amplifier OP1 performs clamping work, the voltages of the positive phase input end and the negative phase input end are clamped to the equipotential, and cooperate with the first electronic switching tube Q1 to mirror the positive temperature coefficient current to the second mirror image circuit 22, and form positive temperature coefficient voltage in the resistive element in the second mirror image circuit 22, meanwhile, the second mirror image circuit 22 generates negative temperature coefficient voltage after the first electronic switching tube Q1 is conducted, the positive temperature coefficient voltage and the negative temperature coefficient voltage are superposed, and the reference voltage with the zero temperature coefficient can be obtained by selecting parameters of appropriate components.
The first mirror image circuit 21 is used for generating a positive temperature coefficient current which is independent of the power supply voltage, the first electronic switch tube Q1, the operational amplifier OP1 and the second mirror image circuit 22 generate a reference voltage which is independent of the temperature, and since most of the process parameters are changed along with the temperature, when the reference voltage is independent, namely, the equivalent of the reference voltage is independent of the process, the obtained reference source circuit has a lower temperature coefficient parameter and can obtain a higher power supply rejection ratio by combining the two parts of circuits.
Meanwhile, due to the introduction of the operational amplifier OP1, the circuit achieves a higher power supply rejection ratio, the power supply ripple is basically and completely transmitted to the output end of the operational amplifier OP1, and the power supply ripple is basically and completely transmitted to the grid electrode of the first electronic switching tube Q1, so that the grid-source voltage of the first electronic switching tube Q1 is basically unchanged and does not fluctuate along with the fluctuation of the power supply, the power supply rejection ratio is improved, and the influence of noise on the circuit is reduced.
The starting circuit 10, the first mirror circuit 21, the second mirror circuit 22, and the reference current generating circuit 30 may employ corresponding switching transistors to form corresponding mirror circuits to form corresponding reference current, bias current, positive temperature coefficient voltage, reference voltage, etc.
Compared with the prior art, the embodiment of the invention has the following beneficial effects: the band-gap reference circuit with the high power supply rejection ratio comprises a first electronic switching tube Q1, a first mirror image circuit 21, a second mirror image circuit 22 and an operational amplifier OP1, wherein the first mirror image circuit 21 generates a positive temperature coefficient current irrelevant to power supply voltage, and meanwhile, the second mirror image circuit 22, the operational amplifier OP1 and the first electronic switching tube Q1 generate a positive temperature coefficient voltage and a negative temperature coefficient voltage, so that the reference current irrelevant to temperature coefficient is output, and therefore, a lower temperature coefficient parameter is obtained, a higher power supply rejection ratio is obtained, and the influence of noise on the circuit is reduced.
Example two
As shown in fig. 3, in one embodiment, the first mirror circuit 21 includes a second electronic switch Q2, a third electronic switch Q3, a fourth electronic switch Q4, a fifth electronic switch Q5, a first transistor K1, a second transistor K2, and a first resistor R1;
the source of the second electronic switching tube Q2 and the source of the third electronic switching tube Q3 are connected in common and connected with the drain of the first electronic switching tube Q1, the gate of the second electronic switching tube Q2, the gate of the third electronic switching tube Q3, the drain of the second electronic switching tube Q2 and the drain of the fourth electronic switching tube Q4 are connected in common to form a first output terminal of the first mirror circuit 21 and connected with the non-inverting input terminal of the operational amplifier OP1, the drain of the third electronic switching tube Q3, the gate of the fourth electronic switching tube Q4, the drain of the fifth electronic switching tube Q5 and the gate of the fifth electronic switching tube Q5 are connected in common to form a second output terminal and a controlled terminal of the first mirror circuit 21 and connected with the inverting input terminal of the operational amplifier OP1, the source of the fourth electronic switching tube Q4 is connected with the first terminal of the first resistor R1, the second terminal of the first resistor R1 is connected with the emitter of the first transistor 1, and the source of the fifth electronic switching tube Q5 is connected with the emitter of the transistor 2K, the collector of the first triode K1, the base of the first triode K1, the collector of the second triode K2 and the base of the second triode K2 are all grounded.
The second mirror circuit 22 comprises a sixth electronic switch tube Q6, a second resistor R2 and a third triode K3;
the source of the sixth electronic switching tube Q6 is connected to the drain of the first electronic switching tube Q1, the gate of the sixth electronic switching tube Q6 is connected to the gate of the second electronic switching tube Q2, the drain of the sixth electronic switching tube Q6 and the first end of the second resistor R2 are connected in common to form the reference voltage output end of the bandgap reference circuit with high power supply rejection ratio, the second end of the second resistor R2 is connected to the emitter of the third triode K3, and the base of the third triode K3 and the collector of the third triode K3 are both grounded.
The start-up circuit 10 further includes a second output terminal, the second output terminal of the start-up circuit 10 is connected to the signal terminal of the reference current generating circuit 30, and the start-up circuit 10 includes a seventh electronic switching tube Q7, an eighth electronic switching tube Q8, a ninth electronic switching tube Q9, a tenth electronic switching tube Q10, an eleventh electronic switching tube Q11, a twelfth electronic switching tube Q12, and a thirteenth electronic switching tube Q13;
a source of the seventh electronic switch Q7, a source of the eleventh electronic switch Q11, a source of the twelfth electronic switch Q12 and a source of the thirteenth electronic switch Q13 are connected in common to form a power supply terminal of the start circuit 10, a gate of the seventh electronic switch Q7, a drain of the seventh electronic switch Q7, a drain of the eleventh electronic switch Q11, a gate of the twelfth electronic switch Q12, a gate of the thirteenth electronic switch Q13 and a source of the eighth electronic switch Q8 are interconnected, a gate of the eleventh electronic switch Q11 is connected to the second signal output terminal of the reference current generating circuit 30, a drain of the eighth electronic switch Q8 is connected to a source of the ninth electronic switch Q9, a drain of the ninth electronic switch Q9 is connected to a source of the tenth electronic switch Q10, a drain of the tenth electronic switch Q10, a gate of the eighth electronic switch Q8, a drain of the ninth electronic switch Q9 and a source of the tenth electronic switch Q10 are connected in common to ground, the drain of the twelfth electronic switching tube Q12 is connected to the gate of the fourth electronic switching tube Q4, and the drain of the thirteenth electronic switching tube Q13 is connected to the signal terminal of the reference current generating circuit 30.
The reference current generating circuit 30 includes a fourteenth electronic switch tube Q14, a fifteenth electronic switch tube Q15, a sixteenth electronic switch tube Q16, a seventeenth electronic switch tube Q17, an eighteenth electronic switch tube Q18, a nineteenth electronic switch tube Q19, a twentieth electronic switch tube Q20, a twenty-first electronic switch tube Q21, a twenty-second electronic switch tube Q22, a twenty-third electronic switch tube Q23, a twenty-fourth electronic switch tube Q24, and a twenty-fifth electronic switch tube Q25, a twenty-sixth electronic switching tube Q26, a twenty-seventh electronic switching tube Q27, a twenty-eighth electronic switching tube Q28, a twenty-ninth electronic switching tube Q29, a thirty-fourth electronic switching tube Q30, a thirty-eleventh electronic switching tube Q31, a thirty-second electronic switching tube Q32, a thirty-third electronic switching tube Q33, a thirty-fourth electronic switching tube Q34, a thirty-fifth electronic switching tube Q35, a thirty-sixth electronic switching tube Q36 and a thirty-seventh electronic switching tube Q37;
a source of the fourteenth electronic switching tube Q14 is connected to the drain of the first electronic switching tube Q1, a gate of the fourteenth electronic switching tube Q14 is connected to the gate of the second electronic switching tube Q2, a drain of the fourteenth electronic switching tube Q14, a drain of the twenty-seventh electronic switching tube Q27, a gate of the thirty-second electronic switching tube Q32, a gate of the thirty-third electronic switching tube Q33, a gate of the thirty-fourth electronic switching tube Q34, a gate of the thirty-fifth electronic switching tube Q35 and a gate of the thirty-sixth electronic switching tube Q36 are interconnected, a source of the twenty-seventh electronic switching tube Q27 is connected to a drain of the thirty-second electronic switching tube Q32, a source of the thirty-second electronic switching tube Q32, a source of the thirty-third electronic switching tube Q33, a source of the thirty-fourth electronic switching tube Q34, a source of the thirty-fifth electronic switching tube Q35 and a source of the thirty-sixth electronic switching tube Q36 are all grounded, and a source of the fifteenth electronic switching tube Q15 is connected to the ground, A source of the sixteenth electronic switching tube Q16, a source of the seventeenth electronic switching tube Q17, a source of the eighteenth electronic switching tube Q18, a source of the nineteenth electronic switching tube Q19, a source of the twentieth electronic switching tube Q20, a source of the twenty-first electronic switching tube Q21, and a source of the thirty-seventh electronic switching tube Q37 are connected in common to form a power source terminal of the reference current generating circuit 30, a gate of the fifteenth electronic switching tube Q15, a drain of the fifteenth electronic switching tube Q15, a gate of the sixteenth electronic switching tube Q16, a gate of the seventeenth electronic switching tube Q17, a gate of the eighteenth electronic switching tube Q18, a drain of the thirty-third electronic switching tube Q33, and a gate of the eleventh electronic switching tube Q11 are interconnected, a drain of the sixteenth electronic switching tube Q16, a drain of the twenty-sixth electronic switching tube Q26, a gate of the twenty-sixth electronic switching tube Q26, and a gate of the twenty-seventh electronic switching tube Q27 are connected in common to form a power source terminal, The grid of the twenty-eighth electronic switching tube Q28, the grid of the twenty-ninth electronic switching tube Q29, the grid of the thirty-eighth electronic switching tube Q30, the grid of the thirty-eleventh electronic switching tube Q31 and the drain of the thirteenth electronic switching tube Q13 are interconnected, the source of the twenty-eighth electronic switching tube Q28 is grounded, the drain of the seventeenth electronic switching tube Q17, the drain of the twenty-ninth electronic switching tube Q29 and the output end of the operational amplifier OP1 are interconnected, the source of the twenty-ninth electronic switching tube Q29 and the drain of the thirty-fourth electronic switching tube Q34 are connected, the drain of the eighteenth electronic switching tube Q18 is used for outputting a bias current, the grid of the twenty-first electronic switching tube Q21, the grid of the twenty-second electronic switching tube Q22, the grid of the twenty-third electronic switching tube Q23, the grid of the twenty-fourth electronic switching tube Q24, the grid of the twenty-fifth electronic switching tube Q25, the drain of the twenty-fifth electronic switching tube Q25 and the thirty-fourth electronic switching tube Q30 are interconnected, the drain of the twenty-first electronic switching tube Q21 is connected with the source of the twenty-fifth electronic switching tube Q25, the source of the thirty-fifth electronic switching tube Q30 is connected with the drain of the thirty-fifth electronic switching tube Q35, the gate of the nineteenth electronic switching tube Q19, the gate of the twentieth electronic switching tube Q20, the gate of the thirty-seventh electronic switching tube Q37, the drain of the twenty-second electronic switching tube Q22 and the drain of the thirty-first electronic switching tube Q31 are interconnected, the drain of the nineteenth electronic switching tube Q19 is connected with the source of the twenty-second electronic switching tube Q22, the drain of the twentieth electronic switching tube Q20 is connected with the source of the twenty-third electronic switching tube Q23, the drain of the thirty-seventh electronic switching tube Q37 is connected with the source of the twenty-fourth electronic switching tube Q24, the source of the twenty-sixth electronic switching tube Q26 is connected with the drain of the twenty-eighth electronic switching tube Q28, and the source of the eleventh electronic switching tube Q31 is connected with the thirty-fourth electronic switching tube Q36, the drain of the twenty-third electronic switch Q23 is used to output the first reference current IBIAS1, and the drain of the twenty-fourth electronic switch Q24 is used to output the second reference current IBIAS 2.
In this embodiment, as the power voltage gradually increases, when the power voltage is greater than the total threshold voltage of the eighth electronic switching tube Q8, the ninth electronic switching tube Q9 and the tenth electronic switching tube Q10, the eighth electronic switching tube Q8, the ninth electronic switching tube Q9 and the tenth electronic switching tube Q10 are turned on, the gate of the seventh electronic switching tube Q7 is pulled down to a low level, the eleventh electronic switching tube Q11, the twelfth electronic switching tube Q12 and the thirteenth electronic switching tube Q13 are turned on, the drain voltages of the twelfth electronic switching tube Q12 and the thirteenth electronic switching tube Q13 gradually increase, the drain of the twelfth electronic switching tube Q12 is connected to the gates of the fourth electronic switching tube Q4 and the fifth electronic switching tube Q5, the drain of the thirteenth electronic switching tube Q13 is connected to the gate of the twenty-seventh electronic switching tube Q27, when the drain voltage increases to the first preset voltage, the fourth electronic switching tube Q4 and the fifth electronic switching tube Q5 are turned on, and generates a reference current to enable the bandgap reference circuit with high power supply rejection ratio to get rid of degenerated bias point, so that the bandgap reference core circuit 20 and the reference current generating circuit 30 can work normally, at this time, the voltage of the inverting input terminal of the operational amplifier OP1 is reduced, the positive input terminal of the operational amplifier OP1 keeps rising state after power supply is powered on, the gate-source voltage of the first electronic switching tube Q1 is greater than the threshold voltage, the first electronic switching tube Q1 is conducted, the reference current generating circuit 30 is started, and generates a bias current to the operational amplifier OP1 through the eighteenth electronic switching tube Q18 image, the operational amplifier OP1 performs clamping operation to clamp the voltages of the positive input terminal and the inverting input terminal to the equal potential, and generates a positive temperature coefficient current on the fourth electronic switching tube Q4 and the first resistor R1, the positive temperature coefficient current is obtained by the reference current image, and is in a proportional relation with the reference current, i.e. the positive temperature coefficient current I is n × Iref, Iref is the reference current generated by the fifth electronic switching tube Q5, n is the size proportion of the second electronic switching tube Q2 and the third electronic switching tube Q3, i.e. the positive temperature coefficient current is mirror-copied through the second electronic switching tube Q2 and the third electronic switching tube Q3, and the reference current is determined by the size of the second triode K2, so that the positive temperature coefficient current and the reference current are relatively independent of the power supply voltage.
The sixth electronic switching tube Q6 mirrors the positive temperature coefficient current and circulates in the second resistor R2, the second resistor R2 generates a positive temperature coefficient voltage, and at the same time, the third electronic switching tube Q3 generates a negative temperature coefficient voltage, and the positive temperature coefficient voltage and the negative temperature coefficient voltage are superposed to generate a reference voltage.
After the reference voltage is established, since the eleventh electronic switch Q11 has a large size and is equivalent to a linear resistor, the drain voltage of the eleventh electronic switch Q11 is pulled up to the power voltage, at this time, the seventh electronic switch Q7, the twelfth electronic switch Q12 and the thirteenth electronic switch Q13 are turned off, the start-up circuit 10 is turned off, and the start-up voltage of the fifth electronic switch Q5 is clamped by the operational amplifier OP1, so that the on state is maintained, and the reference current does not need to be introduced through the twelfth electronic switch Q12.
In this embodiment, the second electronic switching tube Q2, the third electronic switching tube Q3, the fourth electronic switching tube Q4, the fifth electronic switching tube Q5 and the first resistor R1 form a first mirror circuit 21, which generates a positive temperature coefficient current unrelated to the power supply voltage, so that the power supply rejection ratio is improved, and meanwhile, the sixth electronic switching tube Q6 mirrors the positive temperature coefficient current and generates a reference voltage unrelated to the temperature, so that a lower temperature coefficient parameter is obtained.
The magnitude of the ptc current is determined by the temperature, the resistance of the first resistor R1, and the magnitudes of the first transistor K1 and the second transistor K2, and in one embodiment, the calculation formula of the ptc current is:
wherein R1 is the resistance of the first resistor R1, V T KT/q, K is the boltzmann constant, T is the temperature, q is the electronic charge, and N is the size ratio of the first transistor K1 to the second transistor K2.
The positive temperature coefficient current generated by the first triode K1 and the second triode K2 generates positive temperature coefficient voltage through the mirror image of the sixth electronic switching tube Q6 on the second resistor R2, namely
Meanwhile, because the voltage difference between the base and the emitter of the third transistor K3 exists, the third transistor K3 generates a negative temperature coefficient voltage VBE, and therefore, the final reference voltage is:
VBE is the voltage difference between the base and the emitter of the third electronic switching tube Q3, and R2 is the resistance of the second resistor R2.
Since the temperature coefficients of the first resistor R1 and the second resistor R2 are opposite, the reference voltage which does not change with temperature can be obtained by properly selecting the values of the first resistor R1 and the second resistor R2, and N, and in one embodiment, the ratio of the first electronic switch Q1 to the second electronic switch Q2 is 10, i.e., N is equal to 10.
The reference current generating circuit 30 generates a bias current to the operational amplifier OP1, and at the same time, provides reference currents IBIAS1 and IBIAS2 for the subsequent stage circuit, and forms a cascode current mirror by arranging a plurality of electronic switch tubes, so that the bias current and the reference current are more accurate.
Meanwhile, according to different conduction conditions and formed circuit structures of the electronic switching tubes, electronic switching tubes with different structures can be correspondingly selected, as shown in fig. 3, in one embodiment, a first electronic switching tube Q1, a second electronic switching tube Q2, a third electronic switching tube Q3, a sixth electronic switching tube Q6, a seventh electronic switching tube Q7, an eighth electronic switching tube Q8, a ninth electronic switching tube Q9, a tenth electronic switching tube Q10, an eleventh electronic switching tube Q11, a twelfth electronic switching tube Q12, a thirteenth electronic switching tube Q13, a fourteenth electronic switching tube Q14, a fifteenth electronic switching tube Q15, a sixteenth electronic switching tube Q16, a seventeenth electronic switching tube Q5, an eighteenth electronic switching tube Q57324, a nineteenth electronic switching tube Q19, a twentieth electronic switching tube Q20, a twenty-first electronic switching tube Q21, a twentieth electronic switching tube Q2, a twentieth electronic switching tube Q8269556, a sixteenth electronic switching tube Q8269584, a fourteenth electronic switching tube Q8284, a fourteenth electronic switching tube, The twenty-fourth electronic switching tube Q24, the twenty-fifth electronic switching tube Q25, the twenty-sixth electronic switching tube Q26 and the thirty-seventh electronic switching tube Q37 are PMOS tubes, and the fourth electronic switching tube Q4, the fifth electronic switching tube Q5, the twenty-seventh electronic switching tube Q27, the twenty-eighth electronic switching tube Q28, the twenty-ninth electronic switching tube Q29, the thirty-fifth electronic switching tube Q30, the thirty-eleventh electronic switching tube Q31, the thirty-second electronic switching tube Q32, the thirty-third electronic switching tube Q33, the thirty-fourth electronic switching tube Q34, the thirty-fifth electronic switching tube Q35 and the thirty-sixth electronic switching tube Q36 are NMOS tubes.
Meanwhile, the type of the transistor may be selected according to the generated ptc current and the generated ptc voltage, as shown in fig. 3, in one embodiment, the first transistor K1, the second transistor K2, and the third transistor K3 are PNP transistors.
The present invention further provides an electronic device, which includes a bandgap reference circuit with a high power supply rejection ratio, and the specific structure of the bandgap reference circuit with a high power supply rejection ratio refers to the foregoing embodiments.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present invention, and are intended to be included within the scope of the present invention.
Claims (6)
1. A band-gap reference circuit with high power supply rejection ratio is characterized by comprising a starting circuit, a reference current generating circuit and a band-gap reference core circuit, wherein the band-gap reference core circuit comprises a first electronic switching tube, a first mirror image circuit, a second mirror image circuit and an operational amplifier;
a source electrode of the first electronic switching tube, a power supply end of the starting circuit and a power supply end of the reference current generating circuit are connected in common and used for inputting power supply voltage, a drain electrode of the first electronic switching tube is grounded through the first mirror circuit and the second mirror circuit respectively, the drain electrode of the first electronic switching tube is further connected with a controlled end of the reference current generating circuit, an input end of the operational amplifier is connected with an output end of the first mirror circuit, an output end of the operational amplifier is connected with a grid electrode of the first electronic switching tube, and a first signal output end of the starting circuit is connected with the controlled end of the first mirror circuit;
the starting circuit is used for starting when the power supply voltage reaches a first preset voltage, outputting a starting voltage to the first mirror image circuit, and turning off when the second mirror image circuit generates a reference voltage;
the first mirror image circuit is used for being conducted and generating positive temperature coefficient current when receiving the starting voltage, and controlling the conduction of the first electronic switching tube through the output trigger voltage of the operational amplifier, so that the reference current generating circuit outputs bias current to the operational amplifier and outputs reference current;
the operational amplifier is used for clamping the voltage of the output end of the first mirror image circuit when receiving the bias current so as to mirror the positive temperature coefficient current on the second mirror image circuit to generate the positive temperature coefficient current;
the second mirror image circuit is used for generating positive temperature coefficient voltage according to the positive temperature coefficient current and generating the reference voltage after being superposed with negative temperature coefficient voltage generated by grounding;
the first mirror image circuit comprises a second electronic switching tube, a third electronic switching tube, a fourth electronic switching tube, a fifth electronic switching tube, a first triode, a second triode and a first resistor;
the source of the second electronic switch tube and the source of the third electronic switch tube are connected in common and connected with the drain of the first electronic switch tube, the gate of the second electronic switch tube, the gate of the third electronic switch tube, the drain of the second electronic switch tube and the drain of the fourth electronic switch tube are connected in common to form the first output end of the first mirror circuit and connected with the non-inverting input end of the operational amplifier, the drain of the third electronic switch tube, the gate of the fourth electronic switch tube, the drain of the fifth electronic switch tube and the gate of the fifth electronic switch tube are connected in common to form the second output end and the controlled end of the first mirror circuit and connected with the inverting input end of the operational amplifier, the source of the fourth electronic switch tube is connected with the first end of the first resistor, and the second end of the first resistor is connected with the emitter of the first triode, the source electrode of the fifth electronic switching tube is connected with the emitting electrode of the second triode, and the collector electrode of the first triode, the base electrode of the first triode, the collector electrode of the second triode and the base electrode of the second triode are all grounded;
the second mirror image circuit comprises a sixth electronic switching tube, a second resistor and a third triode;
a source electrode of the sixth electronic switching tube is connected with a drain electrode of the first electronic switching tube, a grid electrode of the sixth electronic switching tube is connected with a grid electrode of the second electronic switching tube, a drain electrode of the sixth electronic switching tube and a first end of the second resistor are connected in common to form a reference voltage output end of the band-gap reference circuit with the high power supply rejection ratio, a second end of the second resistor is connected with an emitting electrode of the third triode, and a base electrode of the third triode and a collector electrode of the third triode are both grounded;
the starting circuit further comprises a second output end, the second output end of the starting circuit is connected with the signal end of the reference current generating circuit, and the starting circuit comprises a seventh electronic switching tube, an eighth electronic switching tube, a ninth electronic switching tube, a tenth electronic switching tube, an eleventh electronic switching tube, a twelfth electronic switching tube and a thirteenth electronic switching tube;
a source of the seventh electronic switch tube, a source of the eleventh electronic switch tube, a source of the twelfth electronic switch tube, and a source of the thirteenth electronic switch tube are connected to form a power source of the start circuit, a gate of the seventh electronic switch tube, a drain of the eleventh electronic switch tube, a gate of the twelfth electronic switch tube, a gate of the thirteenth electronic switch tube, and a source of the eighth electronic switch tube are interconnected, a gate of the eleventh electronic switch tube is connected to the second signal output terminal of the reference current generating circuit, a drain of the eighth electronic switch tube is connected to the source of the ninth electronic switch tube, a drain of the ninth electronic switch tube is connected to the source of the tenth electronic switch tube, and a drain of the tenth electronic switch tube, a gate of the eighth electronic switch tube, and a source of the thirteenth electronic switch tube are connected to form a power source of the start circuit, The grid electrode of the ninth electronic switching tube and the grid electrode of the tenth electronic switching tube are connected in common and grounded, the drain electrode of the twelfth electronic switching tube is connected with the grid electrode of the fourth electronic switching tube, and the drain electrode of the thirteenth electronic switching tube is connected with the signal end of the reference current generating circuit;
the reference current generating circuit comprises a fourteenth electronic switching tube, a fifteenth electronic switching tube, a sixteenth electronic switching tube, a seventeenth electronic switching tube, an eighteenth electronic switching tube, a nineteenth electronic switching tube, a twentieth electronic switching tube, a twenty-first electronic switching tube, a twenty-second electronic switching tube, a twenty-third electronic switching tube, a twenty-fourth electronic switching tube, a twenty-fifth electronic switching tube, a twenty-sixth electronic switching tube, a twenty-seventh electronic switching tube, a twenty-eighth electronic switching tube, a twenty-ninth electronic switching tube, a thirty-fourth electronic switching tube, a thirty-fifth electronic switching tube, a thirty-sixth electronic switching tube and a thirty-seventh electronic switching tube;
a source electrode of the fourteenth electronic switching tube is connected with a drain electrode of the first electronic switching tube, a gate electrode of the fourteenth electronic switching tube is connected with a gate electrode of the second electronic switching tube, a drain electrode of the fourteenth electronic switching tube, a drain electrode of the twenty-seventh electronic switching tube, a gate electrode of the thirty-second electronic switching tube, a gate electrode of the thirty-third electronic switching tube, a gate electrode of the thirty-fourth electronic switching tube, a gate electrode of the thirty-fifth electronic switching tube and a gate electrode of the thirty-sixth electronic switching tube are interconnected, a source electrode of the twenty-seventh electronic switching tube is connected with a drain electrode of the thirty-second electronic switching tube, a source electrode of the thirty-third electronic switching tube, a source electrode of the thirty-fourth electronic switching tube, a source electrode of the thirty-fifth electronic switching tube and a source electrode of the thirty-sixth electronic switching tube are all grounded, a source electrode of the fifteenth electronic switch tube, a source electrode of the sixteenth electronic switch tube, a source electrode of the seventeenth electronic switch tube, a source electrode of the eighteenth electronic switch tube, a source electrode of the nineteenth electronic switch tube, a source electrode of the twentieth electronic switch tube, a source electrode of the twenty first electronic switch tube, and a source electrode of the thirty seventh electronic switch tube are connected in common to form a power supply terminal of the reference current generating circuit, a gate electrode of the fifteenth electronic switch tube, a drain electrode of the fifteenth electronic switch tube, a gate electrode of the sixteenth electronic switch tube, a gate electrode of the seventeenth electronic switch tube, a gate electrode of the eighteenth electronic switch tube, a drain electrode of the thirty third electronic switch tube, and a gate electrode of the eleventh electronic switch tube are interconnected, a drain electrode of the sixteenth electronic switch tube, a drain electrode of the twenty sixth electronic switch tube, a source electrode of the seventeenth electronic switch tube, a source electrode of the eighteenth electronic switch tube, a source electrode of the fifteenth electronic switch tube, a source electrode of the nineteenth electronic switch tube, a source electrode of the fifteenth electronic switch tube, a source electrode of the sixteenth electronic switch tube, a source electrode of the seventeenth electronic switch tube, a source electrode of the reference current source electrode of the reference current source, and a source of the reference current source of the reference current source, The grid electrode of the twenty-sixth electronic switching tube, the grid electrode of the twenty-seventh electronic switching tube, the grid electrode of the twenty-eighth electronic switching tube, the grid electrode of the twenty-ninth electronic switching tube, the grid electrode of the thirty-seventh electronic switching tube, the grid electrode of the thirty-eleventh electronic switching tube and the drain electrode of the thirteenth electronic switching tube are interconnected, the source electrode of the twenty-eighth electronic switching tube is grounded, the drain electrode of the seventeenth electronic switching tube, the drain electrode of the twenty-ninth electronic switching tube and the output end of the operational amplifier are interconnected, the source electrode of the twenty-ninth electronic switching tube and the drain electrode of the thirty-fourth electronic switching tube are connected, the drain electrode of the eighteenth electronic switching tube is used for outputting the bias current, the grid electrode of the twenty-first electronic switching tube, the grid electrode of the twenty-second electronic switching tube, the grid electrode of the twenty-third electronic switching tube, the grid electrode of the twenty-eighth electronic switching tube, the gate electrode of the twenty-eighth electronic switching tube, the gate electrode of the operational amplifier, and the operational amplifier, The grid electrode of the twenty-fourth electronic switching tube, the grid electrode of the twenty-fifth electronic switching tube, the drain electrode of the twenty-fifth electronic switching tube and the drain electrode of the thirty-third electronic switching tube are interconnected, the drain electrode of the twenty-first electronic switching tube is connected with the source electrode of the twenty-fifth electronic switching tube, the source electrode of the thirty-fifth electronic switching tube is connected with the drain electrode of the thirty-fifth electronic switching tube, the grid electrode of the nineteenth electronic switching tube, the grid electrode of the twentieth electronic switching tube, the grid electrode of the thirty-seventh electronic switching tube, the drain electrode of the twenty-second electronic switching tube and the drain electrode of the thirty-first electronic switching tube are interconnected, the drain electrode of the nineteenth electronic switching tube is connected with the source electrode of the twenty-second electronic switching tube, and the drain electrode of the twentieth electronic switching tube is connected with the source electrode of the twenty-third electronic switching tube, the drain electrode of the thirty-seventh electronic switching tube is connected with the source electrode of the twenty-fourth electronic switching tube, the source electrode of the twenty-sixth electronic switching tube is connected with the drain electrode of the twenty-eighth electronic switching tube, the source electrode of the thirty-eleventh electronic switching tube is connected with the drain electrode of the thirty-sixth electronic switching tube, the drain electrode of the twenty-third electronic switching tube is used for outputting a first reference current, and the drain electrode of the twenty-fourth electronic switching tube is used for outputting a second reference current.
2. The high power supply rejection ratio bandgap reference circuit as claimed in claim 1, wherein said positive temperature coefficient current is calculated by the formula:
wherein R1 is the resistance value of the first resistor, V T KT/q, K being the boltzmann constant, T being the temperature, q being the electronic charge, N being the size ratio of the first and second transistors;
the calculation formula of the reference voltage is as follows:
VBE is the voltage difference between the base and the emitter of the third electronic switching tube, and R2 is the resistance of the second resistor.
3. A high power supply rejection ratio bandgap reference circuit as in claim 2 wherein N is equal to 10.
4. The high power supply rejection ratio bandgap reference circuit as claimed in claim 1, wherein said first electronic switch, said second electronic switch, said third electronic switch, a sixth electronic switch, said seventh electronic switch, said eighth electronic switch, said ninth electronic switch, said tenth electronic switch, said eleventh electronic switch, said twelfth electronic switch, said thirteenth electronic switch, said fourteenth electronic switch, said fifteenth electronic switch, said sixteenth electronic switch, said seventeenth electronic switch, said eighteenth electronic switch, said nineteenth electronic switch, said twentieth electronic switch, said twenty-first electronic switch, said twenty-second electronic switch, said twenty-third electronic switch, said twenty-fourth electronic switch, The twenty-fifth electronic switching tube, the twenty-sixth electronic switching tube and the thirty-seventh electronic switching tube are PMOS tubes, and the fourth electronic switching tube, the fifth electronic switching tube, the twenty-seventh electronic switching tube, the twenty-eighth electronic switching tube, the twenty-ninth electronic switching tube, the thirty-fourth electronic switching tube, the thirty-third electronic switching tube, the thirty-fourth electronic switching tube, the thirty-fifth electronic switching tube and the thirty-sixth electronic switching tube are NMOS tubes.
5. The high power supply rejection ratio bandgap reference circuit as recited in claim 1, wherein said first transistor, said second transistor and said third transistor are PNP transistors.
6. An electronic device comprising the high power supply rejection ratio bandgap reference circuit as claimed in any one of claims 1 to 5.
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| CN113721690B (en) * | 2021-09-24 | 2022-12-20 | 上海艾为电子技术股份有限公司 | Band gap reference circuit, control method thereof and power supply circuit |
| CN115566061B (en) * | 2022-10-20 | 2024-01-02 | 英诺赛科(苏州)半导体有限公司 | Electronic device, circuit and manufacturing method thereof |
| CN115599155B (en) * | 2022-12-05 | 2023-03-10 | 深圳市微源半导体股份有限公司 | Band gap reference circuit |
| CN116301179B (en) * | 2023-03-23 | 2024-06-07 | 宁波大学 | A Low Temperature Coefficient Reference Current Source Circuit |
| CN116683897B (en) * | 2023-08-04 | 2024-03-19 | 深圳市力生美半导体股份有限公司 | Comparator circuit, integrated circuit, and electronic device |
| CN116880645A (en) * | 2023-08-17 | 2023-10-13 | 南开大学 | Band gap reference current source, low dropout linear voltage regulator and power supply manager |
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| CN100478824C (en) * | 2006-12-28 | 2009-04-15 | 东南大学 | CMOS reference voltage source with adjustable output voltage |
| CN100483290C (en) * | 2006-12-28 | 2009-04-29 | 东南大学 | CMOS reference source circuit |
| CN101271346B (en) * | 2007-03-22 | 2011-08-10 | 应建华 | Band-gap voltage reference circuit with low-power consumption and high electric power rejection ratio |
| CN100492245C (en) * | 2007-07-11 | 2009-05-27 | 中国电子科技集团公司第二十四研究所 | NMOS reference voltage source with high electric power rejection ratio |
| CN100504710C (en) * | 2007-09-20 | 2009-06-24 | 华中科技大学 | Bandgap Reference Source with High Power Supply Rejection |
| CN102262414A (en) * | 2010-05-29 | 2011-11-30 | 比亚迪股份有限公司 | Band-gap reference source generating circuit |
| CN102073332B (en) * | 2010-12-28 | 2012-07-04 | 华东师范大学 | Low temperature coefficient complementary metal oxide semiconductor (CMOS) band-gap reference circuit of output belt low drop-out linear voltage regulator |
| CN102053645B (en) * | 2011-01-31 | 2013-01-16 | 成都瑞芯电子有限公司 | Wide-input voltage high-power supply rejection ratio reference voltage source |
| KR101892069B1 (en) * | 2017-02-15 | 2018-08-27 | 조선대학교 산학협력단 | Bandgap voltage reference circuit |
| CN208255752U (en) * | 2018-06-21 | 2018-12-18 | 湘潭大学 | The section linear compensating CMOS band gap reference of Low Drift Temperature high PSRR |
| CN111221369B (en) * | 2018-11-23 | 2022-01-07 | 比亚迪半导体股份有限公司 | Low dropout linear regulator |
| US10928846B2 (en) * | 2019-02-28 | 2021-02-23 | Apple Inc. | Low voltage high precision power detect circuit with enhanced power supply rejection ratio |
| CN110377096B (en) * | 2019-08-16 | 2020-04-17 | 电子科技大学 | Band-gap reference source with high power supply rejection ratio and low temperature drift |
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