CN113165118A - Method for manufacturing semiconductor device - Google Patents
Method for manufacturing semiconductor device Download PDFInfo
- Publication number
- CN113165118A CN113165118A CN201980077442.7A CN201980077442A CN113165118A CN 113165118 A CN113165118 A CN 113165118A CN 201980077442 A CN201980077442 A CN 201980077442A CN 113165118 A CN113165118 A CN 113165118A
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- Prior art keywords
- bump
- resin layer
- bumped
- laser
- semiconductor device
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Dicing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Laser Beam Processing (AREA)
- Wire Bonding (AREA)
Abstract
The present invention provides a method for manufacturing a semiconductor device, the method comprising: a step of forming a resin layer (13) on a bump forming surface (2A) of a bumped member (2) on which a plurality of bumps (22) are formed; and a step of irradiating the resin layer (13) with a Laser Beam (LB) to remove the resin layer (13) covering the surface of the bump (22).
Description
Technical Field
The present invention relates to a method for manufacturing a semiconductor device.
Background
In recent years, with the miniaturization and thinning of electronic devices, there has been an increasing demand for the thinning and miniaturization of semiconductor packages. Therefore, as a mounting method of a semiconductor element, a flip chip connection method in which a bump electrode called a bump is formed on an electrode of a chip and the electrode of a substrate and the electrode of the chip are directly connected via the bump has been proposed instead of a conventional Wire Bonding method in which connection is performed using a metal Wire.
In such a flip-chip connection type mounting method, a resin layer is provided so as to cover the bumps of the bumped wafer, the bumped chip, and the like, depending on various purposes. Examples of such a resin layer include: an adhesive layer for adhering the bumped chips to the substrate, an underfill layer for enhancing the connection of the bumped chips to the substrate, a protective layer for protecting the bumped wafer or the bumped chips, and the like.
However, when the resin layer covers the bump, the resin layer on the bump must be mechanically removed to ensure electrical connection between the bump and the electrode of the substrate. Therefore, there is a problem in connection reliability between the bumped chip and the substrate. Further, in the case of connecting the bump chip and the substrate by the reflow process, since the molten solder from the bump is covered with the resin layer, there is a problem that a self-alignment effect (a phenomenon that the chip and the substrate are automatically corrected to a normal position at the time of reflow even if the alignment accuracy between the electrodes of the chip and the substrate is poor and a deviation occurs) cannot be obtained.
In order to solve the above problem, for example, a method is proposed, which includes: forming a resin layer on a bump formation surface of a bumped member on which a plurality of bumps are formed; and a step of removing the resin layer covering the bump surface by applying plasma treatment to the resin layer (see patent document 1).
In order to solve the above problem, for example, a method is also proposed, which includes: forming a resin layer on a bump formation surface of a bumped member on which a plurality of bumps are formed; and a step of removing the resin layer covering the bump surface by grinding (see patent document 2).
Documents of the prior art
Patent document
Patent document 1: international publication No. 2016/194431
Patent document 2: japanese patent laid-open publication No. 2017-84903
Disclosure of Invention
Problems to be solved by the invention
In the method described in patent document 1, plasma is irradiated not only to a portion of the resin layer desired to be removed but also to the entire area within the irradiation plane. That is, plasma is irradiated not only to the resin layer covering the top of the bump but also to the resin layer covering the portion which is originally desired to be protected. Therefore, the plasma irradiation may be affected even in a portion which is originally desired to be protected, and there is a risk of deterioration and damage.
In addition, since the method described in patent document 2 is a method of removing the resin layer by grinding, a cutter, a grinder, or a planer comes into contact with the resin layer covering the bump, and a mechanical load is applied to the bump. Therefore, the bumps are displaced and come off, which may reduce the connection reliability.
Accordingly, an object of the present invention is to provide a method for manufacturing a semiconductor device, which can efficiently manufacture a semiconductor device having excellent connection reliability by preventing deterioration and damage of a portion of a bumped member which is originally intended to be protected.
Means for solving the problems
A method for manufacturing a semiconductor device according to an embodiment of the present invention includes: forming a resin layer on a bump formation surface of a bumped member on which a plurality of bumps are formed; and a step of irradiating the resin layer with laser light to remove the resin layer covering the surface of the bump.
According to this configuration, the resin layer can be provided on the bump forming surface of the bumped member for various purposes. Examples of the resin layer include: an adhesive layer for adhering the bumped chips to the substrate, an underfill layer for enhancing the connection of the bumped chips to the substrate, a protective layer for protecting the bumped wafer or the bumped chips, and the like.
Therefore, the resin layer covering the bump surface can be removed easily and efficiently by laser irradiation. Since the laser irradiation method can easily control the irradiation position and can selectively irradiate a portion of the resin layer to be removed with laser light, it is possible to prevent deterioration and damage of a portion of the bumped member which is originally intended to be protected.
Further, according to the laser irradiation method, since the resin layer covering the bump is not brought into contact with a cutter, a grinder, or a planer like the grinding method, the positional shift and the falling-off of the bump can be prevented.
Therefore, by removing the resin layer covering the surface of the bump and electrically connecting the bump exposed on the surface to the electrode of the substrate, a semiconductor device having excellent connection reliability can be efficiently manufactured.
In the method for manufacturing a semiconductor device according to an aspect of the present invention, it is preferable that the method further includes: and a step of bonding a dicing tape to the surface opposite to the bump formation surface.
According to this configuration, since the member with bumps is attached to the dicing tape, the positional displacement of the bumps can be suppressed when the laser beam is irradiated. Therefore, the positional shift of the focal point of the laser beam with respect to the resin layer covering the bump can be suppressed, and the resin layer can be removed more reliably.
In the method for manufacturing a semiconductor device according to an aspect of the present invention, it is preferable that the method further includes: and removing the resin layer to electrically connect the bump with the electrode of the substrate.
According to this configuration, the resin layer covering the surface of the bump is removed, and the bump having the exposed surface is electrically connected to the electrode of the substrate, whereby a semiconductor device having excellent connection reliability can be obtained.
In the method for manufacturing a semiconductor device according to one embodiment of the present invention, the step of removing the resin layer is preferably a step of removing the resin layer covering the top of the bump by the laser beam.
According to this configuration, since the resin layer on the top of the bump is removed, the top of the bump is exposed, and the connection reliability of the electrical connection between the electrode of the substrate and the top of the bump can be further improved.
In the method for manufacturing a semiconductor device according to one embodiment of the present invention, the laser is preferably a Yb laser, a YVO laser, a YAG laser, or CO2And (4) laser.
According to this configuration, the resin layer is irradiated with a Yb laser, a YVO laser, a YAG laser, or CO laser2The laser beam can efficiently remove the resin layer.
In the method for manufacturing a semiconductor device according to one embodiment of the present invention, the irradiation conditions of the laser beam preferably include an output power of 1W to 2W, a frequency of 10kHz to 100kHz, and a scanning speed of 50mm/s to 4000 mm/s.
According to this configuration, since the output power, the frequency, and the scanning speed, which are irradiation conditions of the laser light, are within predetermined ranges, the resin layer can be efficiently removed.
Drawings
Fig. 1 is a schematic sectional view showing an adhesive sheet for forming a resin layer according to a first embodiment of the present invention.
Fig. 2 is a schematic cross-sectional view showing a bumped member (bumped wafer) of the first embodiment of the invention.
Fig. 3A is an explanatory view for explaining a method of manufacturing a semiconductor device according to the first embodiment of the present invention.
Fig. 3B is an explanatory diagram for explaining a method for manufacturing a semiconductor device according to the first embodiment of the present invention.
Fig. 3C is an explanatory diagram for explaining a method for manufacturing a semiconductor device according to the first embodiment of the present invention.
Fig. 4A is an explanatory view for explaining a method of manufacturing a semiconductor device according to the first embodiment of the present invention.
Fig. 4B is an explanatory diagram for explaining a method for manufacturing a semiconductor device according to the first embodiment of the present invention.
Fig. 4C is an explanatory diagram for explaining a method for manufacturing a semiconductor device according to the first embodiment of the present invention.
Fig. 5A is an explanatory view for explaining a method of manufacturing a semiconductor device according to a second embodiment of the present invention.
Fig. 5B is an explanatory view for explaining a method for manufacturing a semiconductor device according to a second embodiment of the present invention.
Fig. 5C is an explanatory view for explaining a method for manufacturing a semiconductor device according to a second embodiment of the present invention.
Fig. 5D is an explanatory diagram for explaining a method for manufacturing a semiconductor device according to a second embodiment of the present invention.
Description of the symbols
A 13 … resin layer, a 2 … bumped wafer (bumped member), a 22 … bump, a 2a … bumped chip (bumped member), a 4 … substrate, a 42 … electrode, and a 100 … semiconductor device.
Detailed Description
[ first embodiment ]
The present invention will be described below with reference to the accompanying drawings by way of examples of embodiments. The present invention is not limited to the content of the embodiments. In the drawings, for ease of explanation, there are portions illustrated in enlarged or reduced sizes.
First, an adhesive sheet and a bumped wafer used in the present embodiment will be described.
(adhesive sheet)
Fig. 1 shows an adhesive sheet 1 used in the present embodiment.
The adhesive sheet 1 used in the present embodiment includes a support layer 11, an adhesive layer 12, and a resin layer 13 containing an adhesive. The surface of the resin layer 13 may be protected by a release film or the like before being bonded to a wafer.
As the support layer 11, a known support can be used as a support of the adhesive sheet, and for example, a plastic film or the like can be used. Such a support layer 11 supports the adherend during processing of the adherend.
Examples of the plastic film include: polyethylene films, polypropylene films, polybutylene films, polybutadiene films, polymethylpentene films, polyvinyl chloride films, vinyl chloride copolymer films, polyethylene terephthalate films, polyethylene naphthalate films, polybutylene terephthalate films, polyurethane films, ethylene vinyl acetate copolymer films, ionomer resin films, ethylene- (meth) acrylic acid copolymer films, ethylene- (meth) acrylic acid ester copolymer films, polystyrene films, polycarbonate films, polyimide films, fluororesin films, and the like. These films may be single-layer films or laminated films. In the case of laminating a film, one kind of film may be laminated, or two or more kinds of films may be laminated.
The adhesive layer 12 can be formed using a known adhesive as the adhesive of the adhesive sheet. Such an adhesive layer 12 firmly fixes the support layer 11 and the resin layer 13 during processing of the adherend, and then fixes and leaves the resin layer 13 on the adherend, thereby facilitating peeling from the support layer 11. The pressure-sensitive adhesive layer 12 may be cured by irradiation with energy rays such as ultraviolet rays, so that the resin layer 13 can be easily peeled.
Examples of the pressure-sensitive adhesive include acrylic pressure-sensitive adhesives, rubber pressure-sensitive adhesives, silicone pressure-sensitive adhesives, and urethane pressure-sensitive adhesives.
The resin layer 13 can be formed using a known adhesive as the adhesive of the adhesive sheet. The resin layer 13 containing such an adhesive can bond the bumped chip 2a and the substrate 4, which will be described later.
Examples of the adhesive include adhesives containing a thermosetting resin such as an epoxy resin and a thermosetting agent. The adhesive may further contain an inorganic filler in order to adjust the coefficient of thermal expansion of the cured product. Examples of the inorganic filler include silica, alumina, talc, calcium carbonate, titanium white, iron oxide, silicon carbide, and boron nitride. These inorganic fillers may be used alone or in combination of two or more.
(wafer with bump)
Fig. 2 shows a bumped wafer 2 (bumped member) used in the present embodiment.
The bumped wafer 2 used in this embodiment includes a semiconductor wafer 21 and bumps 22. The bumps 22 are formed on the side of the semiconductor wafer 21 having the circuit. The bumped wafer 2 of the present embodiment includes a plurality of bumps 22.
The bumped wafer 2 has a bumping surface 2A on which a plurality of bumps 22 are formed and a back surface 2B on which no bumps 22 are formed.
As the semiconductor wafer 21, a known semiconductor wafer can be used, and for example, a silicon wafer or the like can be used.
The thickness of the semiconductor wafer 21 is usually 10 μm or more and 1000 μm or less, and preferably 50 μm or more and 750 μm or less.
As the material of the bump 22, a known conductive material can be used. Examples of the material of the bump 22 include any material selected from copper, silver, gold, aluminum, and a solder alloy. As the solder alloy, a known solder material can be used, and for example, a lead-free solder containing tin, silver, and copper can be used.
The height of the bump 22 is usually 5 μm or more and 1000 μm or less, and preferably 50 μm or more and 500 μm or less.
The cross-sectional shape of the bump 22 viewed from the side direction is not particularly limited, and may be a semicircular shape, a semi-elliptical shape, a circular shape, a rectangular shape, a trapezoidal shape, or the like.
The type of the bump 22 is not particularly limited, and examples thereof include a spherical bump, a mushroom-shaped bump, a nail-shaped bump, a cone-shaped bump, a cylindrical bump, a dot-shaped bump, a cube-shaped bump, and a pillar-shaped bump. These bumps may be used alone or in combination of two or more.
(method of manufacturing semiconductor device)
Next, a method for manufacturing a semiconductor device according to this embodiment will be described.
Fig. 3A to 3C and fig. 4A to 4C are explanatory views illustrating a method for manufacturing a semiconductor device according to the first embodiment.
In the method of manufacturing a semiconductor device according to the present embodiment, first, the resin layer 13 is formed on the bump formation surface 2A of the bumped wafer 2 on which the plurality of bumps 22 are formed. Specifically, as shown in fig. 3A, 3B, and 3C, the resin layer 13 is formed on the bump forming surface 2A of the bumped wafer 2 on which the plurality of bumps 22 are formed, by the following method including: a step of bonding the resin layer 13 of the adhesive sheet 1 to the bump formation surface 2A of the bumped wafer 2 (adhesive sheet bonding step), a step of bonding the dicing tape 3 to the back surface 2B of the bumped wafer 2 (dicing tape bonding step), and a step of peeling the support layer 11 and the adhesive layer 12 of the adhesive sheet 1 from the resin layer 13 (support peeling step).
In the method of manufacturing a semiconductor device according to the present embodiment, next, as shown in fig. 4A, the resin layer 13 covering the surface of the bump 22 is irradiated with a laser beam to remove the resin layer 13 (resin removal step). In the present embodiment, a part of the bump 22 is removed together with the resin layer 13, but only the resin layer 13 may be removed.
Then, as shown in fig. 4B and 4C, the resin layer 13 is removed and the bump 22 with the exposed surface is electrically connected to the electrode 42 of the substrate 4 by the following method: a step of dicing the tape bump wafer 2 with a dicing blade (dicing step), and a step of picking up the bump chips 2a singulated by dicing and bonding and fixing the chips to the substrate 4 as an adherend (bonding step).
The adhesive sheet attaching step, dicing tape attaching step, support body peeling step, resin removing step, dicing step, and bonding step will be described in more detail below.
(adhesive sheet sticking step)
In the adhesive sheet joining step, as shown in fig. 3A, the resin layer 13 of the adhesive sheet 1 is bonded to the surface (bump formation surface 2A) of the bumped wafer 2 on which the bumps 22 are formed. After the adhesive sheet 1 is attached, the bumps 22 are covered with the resin layer 13.
Here, as the attaching method, a known method can be used, and there is no particular limitation, and a method by pressure bonding is preferable. In general, pressure bonding is performed by pressing the adhesive sheet 1 with a pressure bonding roller or the like. The conditions for the pressure bonding are not particularly limited, and the pressure bonding temperature is preferably 40 ℃ or more and 120 ℃ or less. The roll pressure is preferably 0.1MPa or more and 20MPa or less. The pressure bonding speed is preferably 1mm/sec or more and 20mm/sec or less.
The thickness of the resin layer 13 of the adhesive sheet 1 is preferably smaller than the height of the bump 22, more preferably 0.8 times or less the height of the bump 22, and particularly preferably 0.1 times or more and 0.7 times or less the height of the bump 22. If the thickness of the resin layer 13 is not more than the upper limit, the resin layer 13 covering the surface of the bump 22 can be made thinner and can be easily removed in a resin removal step to be described later.
(dicing tape-bonding step)
In the dicing tape bonding step, as shown in fig. 3B, the dicing tape 3 is bonded to the surface (back surface 2B) of the bumped wafer 2 on which the bumps 22 are not formed.
Here, as the attaching method, a known method can be used, and there is no particular limitation, and a method by pressure bonding is preferable. The dicing tape 3 is usually pressed by a pressure roller or the like. The pressure bonding conditions are not particularly limited and may be set as appropriate. As the dicing tape 3, a known dicing tape may be used.
(support stripping step)
In the support peeling step, as shown in fig. 3C, the support layer 11 and the pressure-sensitive adhesive layer 12 of the adhesive sheet 1 are peeled from the resin layer 13. By this support peeling step, the bumped wafer 2 having the resin layer 13 formed on the bump formation surface 2A can be obtained. In addition, the resin layer 13 is preferably formed so as to follow the shape of the bump 22. This can reduce the number of resin layers 13 to be removed in a resin removal step described later, and can improve the operation efficiency.
When the adhesive layer 12 has ultraviolet curability, ultraviolet rays are irradiated from the support layer 11 side as necessary. This cures the pressure-sensitive adhesive layer 12, reduces the adhesive strength at the interface between the pressure-sensitive adhesive layer 12 and the resin layer 13, and facilitates the peeling of the pressure-sensitive adhesive layer 12 from the resin layer 13.
(resin removal step)
In the resin removal step, as shown in fig. 4A, the resin layer 13 covering the surface of the bump 22 is irradiated with a laser LB to remove the resin layer 13.
The resin layer 13 may be removed according to its purpose. For example, if the purpose is to electrically connect the bump 22 with the exposed surface and the electrode 42 of the substrate 4, the resin layer 13 may be removed to such an extent that electrical connection is possible. Specifically, the amount of removal of the resin layer 13 can be adjusted in view of the balance between the connection reliability and the securing of the function of the resin layer 13.
Therefore, the laser beam LB may not be irradiated to the entire resin layer 13. As described above, if the electrical connection between the bump 22 and the electrode 42 of the substrate 4 is intended, the resin layer 13 covering the top can be removed by selectively irradiating a part of the resin layer 13 covering the surface of the bump 22 (for example, the tip part (top) of the bump 22) with the laser LB. In this way, if the resin layer 13 covering the top of the bump 22 is removed by laser irradiation, the surface of the bump 22 can be exposed.
In the resin removal step, since the region of the resin layer 13 desired to be removed can be selectively irradiated with the laser beam LB and the portion of the bumped member which is originally desired to be protected can be not irradiated with the laser beam LB, deterioration and damage of the portion of the bumped member which is originally desired to be protected can be prevented. Examples of the portions of the bumped member which are originally intended to be protected include the base portions of the bumps 22, the bump formation surfaces 2A, and the back surface 2B of the semiconductor wafer 21.
In addition, in the case of removing the resin layer 13 by the grinding method, a mechanical load is applied to the bump 22 because a cutter, a grinder, a planer, or the like is in contact with the resin layer 13 covering the bump 22, but in the resin removing step of the present embodiment, the resin layer 13 may be removed without applying such a mechanical load to the bump 22.
In the resin removal step, as shown in fig. 4A, the laser irradiation device 50 is disposed so as to face the bump 22. The portions of the resin layer 13 covering the bumps 22 that are to be removed are irradiated with the laser beam LB while being scanned. After the removal of the resin layer 13 is completed for one bump 22, the laser irradiation device 50 is moved to similarly remove the resin layer 13 for the other bumps 22. By repeating the removal of the resin layer 13 for each bump 22 in this manner, a part of the resin layer 13 covering the plurality of bumps 22 provided on the bumped wafer 2 (for example, the resin layer 13 covering the tops of the bumps 22) can be selectively removed.
In the present embodiment, in the resin removal step, the resin layer 13 covering the top portions of the bumps 22 and the exposed top portions are irradiated with the laser beam LB, and the tip portions of the bumps 22 are removed as shown in fig. 4A. In this way, by removing a part (for example, a tip part) of the bump 22 by the laser beam LB, the heights of the plurality of bumps 22 can be adjusted to arbitrary heights. In addition, the heights of the plurality of bumps 22 may be made uniform to a uniform height. Further, since a part of the bump 22 is ground, the surface of the bump 22 can be reliably exposed, and the surface area of the bump 22 exposed from the resin layer 13 can be increased.
In the resin removal step, the laser irradiation device 50 is used to irradiate the laser beam LB.
The laser irradiation device 50 is not particularly limited as long as it can irradiate the laser beam for removing the resin layer 13. When not only the resin layer 13 but also a part of the bump 22 is removed, there is no particular limitation as long as the laser irradiation device irradiates laser light that can remove both. For example, a laser irradiation device for laser marking may be used as the laser irradiation device 50. The laser LB is preferably, for example, a Yb laser, a YVO laser, a YAG laser, or CO2And (4) laser. The oscillation form of the laser light is not limited to the form described in the present specification.
The irradiation condition of the laser beam LB is not particularly limited as long as the resin layer 13 (and further the bump 22 if necessary) can be removed. The output power of the laser is preferably 1W to 2W, for example. The frequency of the laser light is preferably 10kHz to 100kHz, for example. The scanning speed of the laser is preferably 50mm/s or more and 4000mm/s or less, for example.
In the resin removal step, it is preferable to remove the resin layer 13 so that the laser irradiated surface has irregularities, but not to remove the resin layer 13 so that the laser irradiated surface becomes smooth. For example, in the resin removal step, as shown in fig. 4A, it is preferable that irregularities remain on the plane formed by the bump 22 and the resin layer 13. When the irregularities remain in this manner, in a bonding step to be described later, when the bumped chip 2a is connected to the electrode 42 of the substrate 4, a gap is formed between the bumped chip 2a and the electrode 42 of the substrate 4 by the concave portion of the irregularities. Since the space for movement of the bump 22 and the resin layer 13 is provided in the gap, connection can be performed while the bump 22 is crushed. Therefore, in the present embodiment, the connection reliability can be improved as compared with the case where the bumped chips 2a formed of the bumps 22 and the resin layer 13 and having a flat surface are joined.
(cutting Process)
In the dicing process, as shown in fig. 4B, the bumped wafer 2 is diced by a dicing blade. In this way, the bumped wafer 2 can be singulated into bumped chips 2 a.
The cutting device is not particularly limited, and a known cutting device can be used. The cutting conditions are not particularly limited either. Instead of the dicing method using the dicing blade, a laser dicing method, a stealth dicing method, or the like may be used.
(bonding) Process)
In the bonding step, as shown in fig. 4C, the bumped chips 2a singulated by dicing are picked up and bonded and fixed to the substrate 4 including the base material 41 and the electrodes 42. Since the resin layer 13 is removed and the surface of the bump 22 of the bumped chip 2a is exposed, the bump 22 can be electrically connected to the electrode 42 of the substrate 4.
The substrate 4 is not particularly limited, and a lead frame, a wiring substrate, a silicon wafer or a silicon chip having a circuit formed on the surface thereof, or the like can be used. The material of the substrate 41 is not particularly limited, and examples thereof include ceramics and plastics. Examples of the plastic include epoxy, bismaleimide triazine, and polyimide.
In the bonding step, if necessary, heat treatment may be applied to cure the adhesive of the resin layer 13.
The conditions of the heat treatment may be appropriately set according to the type of the adhesive.
In the bonding step, a reflow process may be applied as necessary to melt the bumps 22 of the bumped chip 2a and solder the bumped chip 2a to the substrate 4.
The conditions of the reflow process may be appropriately set according to the kind of solder or the like.
As described above, the semiconductor device 100 can be manufactured.
(Effect of the first embodiment)
According to the present embodiment, the following operational effects can be obtained.
(1) The resin layer 13 covering the surface of the bump 22 can be removed easily and efficiently by laser irradiation. When the sectional shape viewed from the side direction of the bump 22 is a semicircular shape, a semi-elliptical shape, a circular shape, a rectangular shape, or a trapezoidal shape, the resin layer 13 covering the surface of the bump 22 may be removed.
(2) According to the laser irradiation method, the irradiation position of the laser beam LB can be easily controlled, and the laser beam LB can be selectively irradiated to the portion of the resin layer 13 that needs to be removed, so that deterioration and damage of the portion of the bumped wafer 2 that is originally intended to be protected can be prevented.
(3) According to the laser irradiation method, since the resin layer 13 covering the bump 22 is not brought into contact with a cutter, a grinder, or a planer like the grinding method, it is possible to prevent the positional displacement of the bump 22 and the detachment of the bump 22.
(4) By removing the resin layer 13 covering the surface of the bump 22 and electrically connecting the bump 22 with the electrode 42 of the substrate 4, the semiconductor device 100 having excellent connection reliability is obtained.
(5) Further, by irradiating the laser LB not only to the resin layer 13 covering the top of the bump 22 but also to the exposed top to remove the tip portion of the bump 22, the height of the bump 22 can be made uniform to an arbitrary uniform height. When the height of the bumps 22 is set to an arbitrary uniform height, connection failure due to the height of the bumps 22 and unevenness thereof can be prevented. Thus, a semiconductor device having excellent connection reliability can be obtained.
(6) In the resin removal step, since the bumps 22 are irradiated with the laser beam LB while the bumped wafer 2 is attached to the dicing tape 3, the position of the bumps 22 can be prevented from being displaced when the laser beam LB is irradiated. As a result, the positional shift of the focal point of the laser beam LB with respect to the resin layer 13 covering the bump 22 is suppressed, and the resin layer 13 can be removed more reliably.
(7) An adhesive layer (resin layer 13) for adhering the bumped chip 2A and the substrate 4 may be provided on the bump forming surface 2A of the bumped chip 2A.
(8) Since the resin layer 13 is provided on the bumped wafer 2, the resin layer 13 covering the surface of the bumps 22 is removed, and then the bumped chips 2a are singulated, the resin layer 13 can be collectively provided on the plurality of bumped chips 2 a.
[ second embodiment ]
Hereinafter, a second embodiment of the present invention will be described with reference to the drawings.
Since the adhesive sheet 1 and the substrate 4 of the present embodiment are substantially the same as the adhesive sheet 1 and the substrate 4 of the first embodiment, respectively, detailed description thereof will be omitted or simplified.
Fig. 5A, 5B, 5C, and 5D are explanatory views illustrating a method for manufacturing a semiconductor device according to a second embodiment.
In the first embodiment, after the resin layer 13 is formed on the bumped wafer 2, the resin layer 13 is removed by laser irradiation, and then the bumped chips 2a are singulated by dicing. In contrast, in the second embodiment, the resin layer 13 is formed on the bumped chip 2a singulated in advance, and then the resin layer 13 is irradiated with the laser LB.
In the method of manufacturing a semiconductor device according to the present embodiment, first, the resin layer 13 is formed on the bump formation surface 2A of the bumped chip 2A on which the plurality of bumps 22 are formed. Specifically, as shown in fig. 5A and 5B, the resin layer 13 is formed on the bump forming surface 2A of the bumped chip 2A on which the plurality of bumps 22 are formed by a method including a step (adhesive sheet bonding step) of bonding the resin layer 13 of the adhesive sheet 1 to the bump forming surface 2A of the bumped chip 2A, and a step (support peeling step) of peeling the support layer 11 and the adhesive layer 12 of the adhesive sheet 1 from the resin layer 13.
In the method of manufacturing a semiconductor device according to the present embodiment, next, as shown in fig. 5C, the resin layer 13 is irradiated with the laser beam LB to remove the resin layer 13 covering the surface of the bump 22 (resin removal step). Then, as shown in fig. 5D, the bumped chip 2a is picked up and bonded and fixed to the substrate 4 as an adherend (bonding step). The resin layer 13 is removed by a method including a resin removal step and a bonding step, and the bump 22 with the exposed surface is electrically connected to the electrode 42 of the substrate 4.
The adhesive sheet attaching step, the support peeling step, the resin removing step, and the bonding step in the present embodiment may be performed by the same methods as those of the adhesive sheet attaching step, the support peeling step, the plasma treatment step, and the bonding step in the first embodiment.
According to the present embodiment, the same operational effects as those of the operational effects (1) to (7) in the first embodiment described above can be achieved.
[ variation of embodiment ]
The present invention is not limited to the above-described embodiments, and modifications, improvements, and the like within a range in which the object of the present invention can be achieved are included in the present invention.
For example, in the above-described embodiment, the embodiment in which the resin layer 13 is removed together with a part of the bump 22 by laser irradiation in the resin removal step has been described as an example, but the present invention is not limited to such an embodiment. That is, in another embodiment of the present invention, only the resin layer 13 may be removed by laser irradiation in the resin removal step.
In the above-described embodiment, the resin layer 13 is provided as an adhesive layer for adhering the bump-attached chip 2a and the substrate 4, but is not limited thereto. That is, in the present invention, the resin layer may be provided according to various purposes. For example, the resin layer 13 may be provided as an underfill layer for enhancing the connection between the bumped chip 2a and the substrate 4. The resin layer 13 may be provided as a protective layer for protecting the tape-bump chip 2 or the tape-bump chip 2 a. In this case, as the material of the resin layer 13, a known material can be used as the material of the underfill layer or the protective layer.
In the above-described embodiment, the resin layer 13 is in contact with both the bumped chip 2a and the substrate 4, but the present invention is not limited thereto. For example, when the resin layer 13 is provided as a protective layer for protecting the tape bump chip 2a, the resin layer 13 may be in contact with the tape bump chip 2a, and may not be in contact with the substrate 4.
In the above-described embodiment, the bumped wafer 2 is used as the bumped member, but the present invention is not limited thereto. For example, the bumped component may be a package with bumps (e.g., bga (ball grid array), csp (chip size package), etc.).
In the above-described embodiment, the resin layer 13 is formed on the bump forming surface 2A using the adhesive sheet 1 to cover the bumps 22, but the present invention is not limited thereto. For example, the resin layer 13 may be formed by applying a resin composition to the bump forming surface 2A and curing the resin composition to cover the bumps 22.
In the above-described embodiment, the adhesive sheet 1 including the support layer 11, the pressure-sensitive adhesive layer 12, and the resin layer 13 is used, but the present invention is not limited thereto. For example, the adhesive sheet 1 may be an adhesive sheet including the support layer 11 and the resin layer 13 without the pressure-sensitive adhesive layer 12. In this case, in the support peeling step, the support layer 11 may be peeled from the resin layer 13.
In the resin removal step of the second embodiment, the resin layer 13 may be irradiated with the laser beam LB while being fixed to a fixing member (e.g., a suction table, an adhesive sheet, or the like) for fixing the bump chip 2 a. After the resin layer 13 is removed, the bumped chip 2a may be picked up from the fixing member and subjected to the bonding step.
Examples
The present invention will be described in more detail below with reference to examples. The present invention is not limited to these arbitrary embodiments.
[ protective film-forming sheet ]
A protective film-forming sheet as a resin layer was produced as follows.
First, the following components (a), (b), (c), (d) and (e) were mixed at the following mixing ratios (in terms of solid content) to obtain a mixture. This mixture was diluted with methyl ethyl ketone to prepare a coating agent for forming a protective film having a solid content concentration of 55 mass%. The coating agent for forming a protective film was applied and dried to obtain a protective film-forming sheet having a thickness of 30 μm.
(a) Adhesive Polymer (polyvinyl butyral resin)
The mixing ratio is as follows: 9.9% by mass
(b) Epoxy resin
The mixing ratio is as follows: 62.8% by mass
(c) Phenolic resin
The mixing ratio is as follows: 18.1% by mass
(d) Curing accelerator (imidazole compound)
The mixing ratio is as follows: 0.2% by mass
(e) Silica filler
The mixing ratio is as follows: 9% by mass
[ production of chip with bumps having protective film adhered thereon ]
A chip with bumps to which a protective film was attached (a chip with bumps to which a protective film was attached) was produced as follows.
An adhesive tape as a support layer provided with an adhesive layer and a protective film-forming sheet (thickness: 30 μm) as a resin layer were laminated to prepare an adhesive sheet. As the adhesive tape, E-8510HR (product name) manufactured by Linekeko Kabushiki Kaisha was used.
The adhesive sheet was attached to the following bumped chip as a bumped member under the following attachment conditions.
Pasting conditions
The device comprises the following steps: roller type laminating machine
(product name manufactured by Lindeke corporation: RAD-3510F/12)
Temperature: 90 deg.C
Pressure: 0.5MPa
Speed: 2mm/sec
Chip with bumps
The type of the bump: spherical projection
Height of the bump: 200 μm
Bump diameter: 250 μm
Bump pitch: 600 μm
After the adhesive sheet was attached to the chip with bumps, UV was irradiated from the adhesive sheet side using RAD-2700 (product name) manufactured by ledebacaceae, and only the adhesive tape was peeled off, thereby obtaining the chip with bumps to which the protective film forming sheet was attached. Then, the bumped chip with the protective film forming sheet attached thereto was treated at 130 ℃ under 0.5MPa for 2 hours to obtain a bumped chip with a protective film attached thereto.
[ example 1]
The top of the bump of the bumped chip with the protective film attached thereto was irradiated with laser light under the following conditions using the following apparatus, and the protective film (corresponding to the resin layer) on the top of the bump was removed.
Conditions of laser irradiation
The device comprises the following steps: laser marking machine
(product name: EO-CSM CSM 3002FC, product name: EOTechnics Co., Ltd.)
Laser type: YVO4
Output power: 1.27W
Frequency: 20000Hz
Scanning speed: 200mm/s
The bump surface of the bump-attached chip to which the protective film was attached after laser irradiation was observed with a Scanning Electron Microscope (SEM), and the removability of the protective film was evaluated according to the following criteria. The obtained results are shown in table 1.
A: the protective film covering the top of the bump was removed, and the top was confirmed to be exposed.
B: the protective film covering the tops of the bumps remains without being removed.
C: not only the protective film covering the tops of the bumps but also the protective film of the portion that is originally desired to be protected is removed.
D: the position of the bump on the chip is deviated and falls off.
[ examples 2 and 3]
The protective film on the top of the bump was removed in the same manner as in example 1, except that the conditions for laser irradiation were changed according to the conditions shown in table 1.
The bump surface of the bump-attached chip to which the protective film was attached after laser irradiation was observed with a Scanning Electron Microscope (SEM), and the removability of the protective film was evaluated in accordance with the same criteria as in example 1. The obtained results are shown in table 1.
Comparative example 1
A chip with bumps to which a protective film was attached was obtained in the same manner as in example 1, except that laser irradiation was not performed.
The bump surface of the bumped chip with the protective film attached thereto was observed with a Scanning Electron Microscope (SEM), and the removability of the protective film was evaluated according to the same criteria as in example 1. The obtained results are shown in table 1.
Comparative example 2
A chip with bumps to which a protective film was attached was obtained in the same manner as in example 1, except that the laser irradiation was not performed and the plasma irradiation was performed under the following conditions.
The bump surface of the bump-attached chip to which the protective film was attached after plasma irradiation was observed by a Scanning Electron Microscope (SEM), and the removability of the protective film was evaluated in accordance with the same criteria as in example 1. The obtained results are shown in table 1.
Conditions of plasma irradiation
Treating gas: SF6
Flow rate of process gas: 40cm3/min
Treatment pressure: 100Pa
Output power: 250W
Treatment time: 15 minutes
Cleaning: 1 time of
Comparative example 3
A bump chip with a protective film attached thereto was obtained in the same manner as in example 1, except that the bump chip with a protective film attached thereto was fixed to a jig with a double-sided adhesive tape without laser irradiation and the protective film covering the bump was removed by grinding with a grinding machine under the following conditions.
The bump surface of the bump chip with the protective film attached thereto after grinding by a grinder was observed by a Scanning Electron Microscope (SEM), and the removability of the protective film was evaluated according to the same criteria as in example 1. The obtained results are shown in table 1.
Conditions of grinding by grinding machines
The device comprises the following steps: manufactured by REFINETEC Inc., Refine Polisher HV
Polishing paper: #120 (Water resistant polishing paper manufactured by REFINETEC Co.)
Rotating speed: 200rpm
Loading: 2N
[ Table 1]
According to embodiments 1 to 3, the protective film on the top of the bump can be selectively removed while preventing deterioration and damage of the portion of the bumped chip, which is to be protected originally, as the bumped member. In addition, according to embodiments 1 to 3, the position of the bump on the chip is not shifted and the bump is not detached. Therefore, by removing the resin layer by the method of examples 1 to 3 and electrically connecting the bumps with the exposed surface to the electrodes of the substrate, a semiconductor device with excellent connection reliability can be manufactured.
In comparative example 1, the protective film could not be removed.
In comparative example 2, not only the protective film covering the top of the bump but also the protective film of the portion which is originally desired to be protected was removed.
In comparative example 3, since a mechanical load of a grinder was applied to the bump, the bump was detached from the chip.
Industrial applicability
The present invention can be applied to a method for manufacturing a semiconductor device.
Claims (6)
1. A method of manufacturing a semiconductor device, the method comprising:
forming a resin layer on a bump formation surface of a bumped member on which a plurality of bumps are formed;
and a step of irradiating the resin layer with laser light to remove the resin layer covering the surface of the bump.
2. The method for manufacturing a semiconductor device according to claim 1, further comprising:
and a step of bonding a dicing tape to the surface opposite to the bump formation surface.
3. The method for manufacturing a semiconductor device according to claim 1 or 2, further comprising:
and removing the resin layer to electrically connect the bump with the electrode of the substrate.
4. The method for manufacturing a semiconductor device according to any one of claims 1 to 3,
the step of removing the resin layer is a step of removing the resin layer covering the top of the bump by the laser.
5. The method for manufacturing a semiconductor device according to any one of claims 1 to 4,
the laser is Yb laser, YVO laser, YAG laser or CO2And (4) laser.
6. The method for manufacturing a semiconductor device according to any one of claims 1 to 5,
as the irradiation condition of the laser light,
an output power of 1W to 2W,
the frequency is 10kHz or more and 100kHz or less,
the scanning speed is 50mm/s to 4000 mm/s.
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| PCT/JP2019/043199 WO2020110619A1 (en) | 2018-11-27 | 2019-11-05 | Semiconductor device manufacturing method |
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| JP7402176B2 (en) | 2023-12-20 |
| CN113165118B (en) | 2023-04-14 |
| WO2020110619A1 (en) | 2020-06-04 |
| TWI832923B (en) | 2024-02-21 |
| JPWO2020110619A1 (en) | 2021-10-14 |
| KR20210093915A (en) | 2021-07-28 |
| TW202025276A (en) | 2020-07-01 |
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