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CN1122052A - 半导体封装及制造方法 - Google Patents

半导体封装及制造方法 Download PDF

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CN1122052A
CN1122052A CN95105049A CN95105049A CN1122052A CN 1122052 A CN1122052 A CN 1122052A CN 95105049 A CN95105049 A CN 95105049A CN 95105049 A CN95105049 A CN 95105049A CN 1122052 A CN1122052 A CN 1122052A
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林田澄人
梅本一宽
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Abstract

本发明的目的是为了降低半导体封装的制造成本同时又保持半导体封装具有良好的热耗散。借助于用碱去油、用水清洗并干燥来对热沉22进行羟基化。之后在热沉22的表面上加一稀释的硅烷连接剂，并将热沉22烘干以便在热沉22的表面上形成一个硅烷连接剂层A。然后把载于压模垫16上的芯片12和用引线20连接于芯片12的引线框18置于模件中，热沉22置于同一模件中，此系统即注模成一个半导体封装10。

Description

半导体封装及其制造方法
本发明涉及改善了热沉同封装模体之间的粘合的半导体封装及其制造方法。
现今的某些半导体器件在工作过程中都产生热，因而这些半导体器件需要有效地冷却。一种其中具有埋置于包封半导体器件的模件中用来散热的热沉的结构的半导体封装已为人们所知。
由于在模件中有必要提供热沉而又需要维持热沉和模件之间的粘合并防止潮气渗入粘合部位，已提出了各种各样的半导体封装制造方法。
参照图3—5来描述一下生产半导体封装的现有技术的方法。
例如，如图3(a)所示，借助于注塑一个模件114，使其带有一稍大于热沉118的空间120，首先将连接于引线框116的芯片112包封起来。然后如图3(b)所示，将热沉118置于空间120中，再将粘合树脂122注入模件114和热沉118之间的间隙中以便将热沉118固定在空间120中。
然而，采用图3所示的这一第一种方法，诸如注塑模件114之后使热沉118置于空间120之中并在模件114和热沉118之间注入树脂122之类的特定步骤，使制造半导体封装的成本上升。
如图4(a)所示，将其上用双面粘合带144粘结一散热器142的引线框136看作是普通的引线框，而如图4(b)所示，连接于引线框136的芯片132被置于散热器142上，并将其包封在树脂材料组成的模件134中。
使用图4所示的这一第二种方法，由于增加了引线框136的成本而使半导体封装的生产成本上升，而且热耗散的效率比从半导体封装中暴露出来的普通热沉的效率更低。
此外，第三种方法是把具有如图5所示形状的热沉152置于压模(未示出)中，并形成一个模件(未示出)来把热沉152埋置于此模件中。
然而，用第三种方法需要把热沉152加工为图5所示的复杂形状以维持热沉同模件之间的粘合，致使热沉152的制造成本上升，从而增加了半导体封装的总的制造成本。
考虑到上述问题，本发明的目的是提供一种能长时间地保持最佳热耗散状态同时又降低制造成本的半导体封装，并提供一种制造这种半导体封装的方法。
根据本发明的制造半导体封装的方法是一种制造安装有半导体器件的半导体封装的方法，它包含下列步骤：
对用来耗散半导体器件产生的热的金属热沉的表面进行羟基化，然后在热沉的表面上沉积一层硅烷连接剂，以及
采用在热沉周围注入树脂材料的方法，把热沉埋置在注模树脂之中。
在根据本发明生产半导体封装的方法中，在热沉表面上最好用沉积一层硅烷连接剂的方法制作一层硅烷连接剂，此硅烷连接剂含有下列一组材料中的一种：γ—氨丙基—三乙氧基甲硅烷、N—β—(氨乙基)—γ—氨丙基—三甲氧基甲硅烷、β—(3，4—环氧—环己基)—乙基三甲氧基甲硅烷、以及γ—缩水甘油氧(glycidoxy)—丙基三甲氧基甲硅烷。
在本发明的制造半导体封装的方法中，最好通过将热沉浸入碱溶液、然后用水清洗并干燥的方法对热沉的表面进行羟基化。
根据本发明的半导体封装是一种在注模树脂中带有内置半导体器件和一个用来耗散半导体器件所产生的热的埋置金属热沉的半导体封装，而且热沉的表面有一层硅烷连接剂。
根据本发明的半导体封装是一种在注模树脂中带有内置半导体器件和一个用来耗散半导体器件所产生的热的埋置金属热沉的半导体封装，而且热沉的表面有一层含有下列组合之一的硅烷连接剂：γ—氨丙基—三乙氧基甲硅烷、N—β—(氨乙基)—γ—氨丙基—三甲氧基甲硅烷、β—(3，4—环氧—环己基)—乙基三甲氧基甲硅烷、以及γ—缩水甘油氧—丙基三甲氧基甲硅烷。
根据本发明的半导体封装是一种在注模树脂中带有内置半导体器件和一个用来耗散半导体器件所产生的热的埋置金属热沉的半导体封装，而且热沉被碱溶液羟基化，热沉的表面带有一层硅烷连接剂。
根据本发明的半导体封装是一种在注模树脂中带有内置半导体器件和一个用来耗散半导体器件所产生的热的埋置金属热沉的半导体封装，而且热沉为简单形状，热沉的表面带有一层硅烷连接剂。
由于金属热沉的表面被羟基化，此后在热沉的表面上加一层硅烷连接剂，并通过在热沉周围注入树脂材料而把热沉埋置在铸模树脂之中，故增强热沉同模件之间的粘合。
由于增强了粘合，半导体封装的抗热应力和抗潮气的性能就得到了改善。结果可获得与带有埋置的热沉的其它半导体封装等效或比之更高的可靠性，而且可长时间地防止诸如热耗散之类的热学性能的变坏。
可以简化热沉的形状，从而降低半导体封装的制造成本。
本发明的半导体器件同热沉一起埋置在注模树脂之中，热沉的表面上有一层硅烷连接剂。
这就使模件同热沉之间的粘合得到增强，并改善了半导体封装的抗热应力和抗潮气的性能。结果，可获得与带有埋置的热沉的其它半导体封装等效或比之更高的可靠性，而且可长时间地防止诸如热耗散之类的热学性能的变坏。热沉的形状也可以简化，从而降低半导体封装的制造成本。
下面结合附图描述本发明。
图1是一个剖面图，示出了用本发明制造半导体封装的方法生产出的半导体封装的一个实施例；
图2是本发明制造半导体封装的方法的一个实施例中所用的热沉的透视图；
图3示出了制造第一例现有技术半导体封装的方法；(a)是安装热沉之前的半导体封装的剖面图，(b)是安装热沉之后的半导体封装的剖面图；
图4示出了制造第二例现有技术半导体封装的方法；(a)是用双面粘合带安装于引线框的散热器示意图，(b)是成品半导体封装的剖面图；以及
图5示出了制造第三例现有技术半导体封装的方法中所用的一种热沉；(a)是热沉的俯视图，(b)是同一热沉的侧视图。
以下参照图1和2来描述半导体封装及其制造方法的实施例。
如图1所示，半导体器件芯片12包封在构成本发明的半导体封装10的外框的塑料模件14的中央，此时芯片12的上端被安装在呈平面状的压模垫16上，而其一些端部伸出到模件14外面的引线框18的另一些端部经由引线20被连接到芯片12。在模件14中压模垫16的上方有一个由铝、铜或它们的合金构成的具有高热导率的盘状热沉22(示于图2)，其上表面暴露于外。采用3由同引线框18相同的金属材料组成的压模垫16。
若采用这种半导体封装10，利用上述结构，由其一部分暴露于外的热沉22可确保高的热耗散。
以下描述这种热沉22的表面处理和半导体封装10的制造。
为了简化处理，采用把热沉22浸入下面列出的碱溶液、用水清洗并干燥的方法来使热沉22羟基化。也可以用通常电镀中所采用的方法进行在碱溶液中的浸入。
此外所用的碱溶液的例子包括下面的(1)、(2)和(3)，要使其在室温至70℃温度范围内的pH值等于或小于10。
(1)氢氧化钠：10—40g/l
(2)碳酸钠：15—25g/l
(3)磷酸钠：12—22g/l这是一些例子，实际上任何含有氢氧根的溶液均可使用。
然后用涂覆、喷射或浸渍等方法，把稀释的硅烷连接剂加于热沉22的表面，并使热沉22干燥以便在热沉22的表面上制作一个硅烷连接剂层A。
用于本发明的方法中的硅烷连接剂的例子包括下列(1)、(2)、(3)和(4)，此时与环氧树脂的反应通常构成模件14：
(1)γ—氨丙基—三乙氧基甲硅烷
(2)N—β—(氨乙基)—γ氨丙基—三甲氧基甲硅烷
(3)β—(3，4—环氧—环己基)—乙基三甲氧基甲硅烷
(4)γ—缩水甘油氧—丙基三甲氧基甲硅烷。
一例稀释液是1份硅烷连接剂、9份水、80份异丙醇和10份甲醇。热沉22在50—120℃温度范围内进行干燥。
接着安装在压模垫16上的芯片12和用引线20连接于芯片12的引线框18被置于压模(未示出)之中，在羟基化之后其上形成了一个硅烷连接剂层A的热沉22被置于同一压模之中，并用树脂材料注模成一个模件14。由此就制成了带有图1所示结构的半导体封装。
其结果是，即使简单的盘状热沉22也与模件14有足够强的粘合性，而且，即使由施加热循环引起热应力，热沉22也不会同模件14分离，亦即在模件14和热沉22之间不存在间隙。因而改善了抗潮性能，增强了半导体封装10的可靠性，并可长时间地防止诸如热耗散之类的热学性能的变坏。
由于热沉22的形状简单，故可用低成本的机加工来大批量生产热沉22。而且在注模模件树脂14方面，由于除去在模件14中置入热沉22的工序外可以采用大多数常规制造工艺，故可以低成本注模出模件14。
因此，依靠热沉22制造成本和注模成本的降低，就可以降低半导体封装10的制造成本。
倘若硅烷连接剂的粘合性足以把热沉22和模件14连接起来，则可略去碱浸入工序。
虽然用作模件14的材料的合成树脂包括例如环氧树脂，但对本领域熟练技术人员来说，都知道也可以采用其它合成树脂。
如上所述，根据本发明的半导体封装及其制造方法降低了半导体封装的制造成本，同时又保持了长时间的良好热耗散状态。

Claims (7)

1.一种安装有半导体器件的半导体封装的制造方法，它包含下列步骤：
使用来耗散半导体器件产生的热的金属热沉的表面羟基化，然后在上述热沉的表面上沉积一层硅烷连接剂，以及
采用在上述热沉周围注入一树脂材料的方法把上述热沉埋置于注模树脂中。
2.权利要求1所述的制造半导体封装的方法，其特征在于：在上述热沉表面上沉积一层硅烷连接剂的步骤所沉积的硅烷连接剂层包含由下列一组中选择的一种：γ—氨丙基—三乙氧基甲硅烷、N—β—(氨乙基)—γ氨丙基—三甲氧基甲硅烷、β—(3，4—环氧—环己基)—乙基三甲氧基甲硅烷、以及γ—缩水甘油氧—丙基三甲氧基甲硅烷。
3.权利要求1所述的制造半导体封装的方法，其特征在于：使上述热沉的表面羟基化的步骤是借助于将上述热沉浸入碱溶液然而用水清洗并干燥的方法来执行的。
4.一种半导体封装，带有内置半导体器件和一个用来耗散注模树脂中的上述半导体器件所产生的热的埋置金属热沉，上述热沉的表面带有一层硅烷连接剂。
5.一种半导体封装，带有内置半导体器件和一个用来耗散注模树脂中的上述半导体器件所产生的热的埋置金属热沉，上述热沉的表面带有一层含有选自下列一组材料之一的硅烷连接剂：γ—氨丙基—三乙氧基甲硅烷、N—β—(氨乙基)—γ—氨丙基—三甲氧基甲硅烷、β—(3，4—环氧—环己基)—乙基三甲氧基甲硅烷、以及γ—缩水甘油氧—丙基三甲氧基甲硅烷。
6.一种半导体封装，带有内置半导体器件和一个用来耗散注模树脂中的上述半导体器件所产生的热的埋置金属热沉，上述热沉用碱溶液羟基化，且上述热沉的表面带有一层硅烷连接剂。
7.一种半导体封装，带有内置半导体器件和一个用来耗散注模树脂中的上述半导体器件所产生的热的埋置金属热沉，上述热沉制作成简单形状，且上述热沉的表面带有一层硅烷连接剂。
CN95105049A 1994-07-05 1995-04-27 半导体封装及制造方法 Pending CN1122052A (zh)

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