[go: up one dir, main page]

CN111883472A - Method for manufacturing and repairing micro light-emitting diode display - Google Patents

Method for manufacturing and repairing micro light-emitting diode display Download PDF

Info

Publication number
CN111883472A
CN111883472A CN202010606852.0A CN202010606852A CN111883472A CN 111883472 A CN111883472 A CN 111883472A CN 202010606852 A CN202010606852 A CN 202010606852A CN 111883472 A CN111883472 A CN 111883472A
Authority
CN
China
Prior art keywords
emitting diode
micro light
micro
substrate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202010606852.0A
Other languages
Chinese (zh)
Inventor
张有为
朱充沛
张良玉
郁杰
高威
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanjing CEC Panda LCD Technology Co Ltd
Original Assignee
Nanjing CEC Panda LCD Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanjing CEC Panda LCD Technology Co Ltd filed Critical Nanjing CEC Panda LCD Technology Co Ltd
Priority to CN202010606852.0A priority Critical patent/CN111883472A/en
Publication of CN111883472A publication Critical patent/CN111883472A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68363Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68372Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support a device or wafer when forming electrical connections thereto
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0364Manufacture or treatment of packages of interconnections

Landscapes

  • Engineering & Computer Science (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

本发明提供一种微型发光二极管显示器的修补方法,包括如下步骤:S1:可伸缩吸头吸附多个微型发光二极管并将每个微型发光二极管放置在驱动基板上的相邻微型发光二极管之间的位置上;S2:改变可伸缩吸头的温度使得可伸缩吸头产生弹性形变,当驱动基板的放置微型发光二极管的位置上存在微型发光二极管,则驱动基板上的微型发光二极管把可伸缩吸头上对应的微型发光二极管挡住使其无法移动;当驱动基板的放置微型发光二极管的位置上缺少微型发光二极管,则可伸缩吸头上对应的微型发光二极管移动至缺少微型发光二极管的位置上。本发明在不进行封装的情况进行检测,易于修补,且不需要微型发光二极管缺失点的检测,节省时间和成本;提高修补效率,能同时修补所有缺失点。

Figure 202010606852

The present invention provides a repairing method for a miniature light-emitting diode display, comprising the following steps: S1: a retractable suction head adsorbs a plurality of miniature light-emitting diodes and places each miniature light-emitting diode between adjacent miniature light-emitting diodes on a driving substrate position; S2: Change the temperature of the retractable tip to make the retractable tip elastically deform. When there is a micro-LED on the position where the micro-LED is placed on the driving substrate, the micro-LED on the driving substrate will move the retractable tip. The corresponding micro-LEDs on the retractable tip are blocked so that they cannot be moved; when the micro-LEDs are missing from the positions where the micro-LEDs are placed on the driving substrate, the corresponding micro-LEDs on the retractable tip move to the position where the micro-LEDs are missing. The present invention performs detection without encapsulation, is easy to repair, does not require detection of missing points of micro light emitting diodes, saves time and cost, improves repairing efficiency, and can repair all missing points at the same time.

Figure 202010606852

Description

微型发光二极管显示器的制造方法和修补方法Manufacturing method and repairing method of miniature light-emitting diode display

技术领域technical field

本发明涉及微型发光二极管的技术领域,尤其涉及一种微型发光二极管显示器的制造方法和修补方法。The present invention relates to the technical field of miniature light-emitting diodes, and in particular, to a manufacturing method and a repairing method of a miniature light-emitting diode display.

背景技术Background technique

Micro LED显示器由于具有低功耗、高亮度、超高解析度与色彩饱和度、反应速度快、超省电(Micro LED显示器的耗电量为液晶显示器耗电量的10%,为有机电致发光显示器耗电量的50%)、长寿命、高效率、适应各种尺寸和无缝拼接等优势,因而成为目前最具有潜力的下一代新型显示技术。Micro LED displays have low power consumption, high brightness, ultra-high resolution and color saturation, fast response speed, and ultra-power saving (the power consumption of Micro LED displays is 10% of that of liquid crystal displays, which is an organic electro- 50% of the power consumption of light-emitting displays), long life, high efficiency, adaptability to various sizes and seamless splicing, etc., so it has become the most potential next-generation new display technology.

制作Micro LED显示器需要将百万颗的微米级LED转移至背板上,目前技术转移后难免存在LED缺失的情况,如果不进行修补,便会造成显示不良,如何对缺失点进行修补是迫切需要解决的难题。Making a Micro LED display requires transferring millions of micron-sized LEDs to the backplane. At present, it is inevitable that there will be missing LEDs after the technology transfer. If it is not repaired, it will cause poor display. How to repair the missing points is urgent problem solved.

现有技术首先要对背板进行检测,找到缺失点再逐一进行修补或者加电测试找到缺失点,再一一修补。现有技术存在效率低的问题。In the prior art, the backplane is firstly inspected, and the missing points are found and then repaired one by one, or a power-on test is performed to find the missing points, and then repaired one by one. The prior art has the problem of low efficiency.

发明内容SUMMARY OF THE INVENTION

本发明的目的在于提供一种节约时间和成本、且体改修补效率的微型发光二极管显示器的制造方法和修补方法。The purpose of the present invention is to provide a manufacturing method and a repairing method of a miniature light emitting diode display that saves time and cost, and improves the repairing efficiency.

本发明提供一种微型发光二极管显示器的修补方法,包括如下步骤:The present invention provides a method for repairing a miniature light-emitting diode display, comprising the following steps:

S1:可伸缩吸头吸附多个微型发光二极管并将每个微型发光二极管放置在驱动基板上的相邻微型发光二极管之间的位置上;S1: the retractable suction head adsorbs a plurality of miniature light-emitting diodes and places each miniature light-emitting diode in a position between adjacent miniature light-emitting diodes on the driving substrate;

S2:改变可伸缩吸头的温度使得可伸缩吸头产生弹性形变,当驱动基板的放置微型发光二极管的位置上存在微型发光二极管,则驱动基板上的微型发光二极管把可伸缩吸头上对应的微型发光二极管挡住使其无法移动;当驱动基板的放置微型发光二极管的位置上缺少微型发光二极管,则可伸缩吸头上对应的微型发光二极管移动至缺少微型发光二极管的位置上;S2: Change the temperature of the retractable tip to make the retractable tip elastically deform. When there is a micro-LED on the position where the micro-LED is placed on the driving substrate, the micro-LED on the driving substrate will put the corresponding micro-LED on the retractable tip. The micro LEDs are blocked so that they cannot be moved; when the micro LEDs are missing from the position where the micro LEDs are placed on the drive substrate, the corresponding micro LEDs on the retractable tip move to the position where the micro LEDs are missing;

S3:给微型发光二极管两端进行通电,点亮微型发光二极管使得微型发光二极管固定在驱动基板上;S3: energize both ends of the miniature light-emitting diode, and light the miniature light-emitting diode so that the miniature light-emitting diode is fixed on the driving substrate;

S4:移走可伸缩吸头。S4: Remove the retractable tip.

进一步地,步骤S1中的可伸缩吸头的制造方法为:Further, the manufacturing method of the retractable suction head in step S1 is:

在可伸缩基底上形成阵列设置的金属接触部;forming an array of metal contacts on a retractable substrate;

在金属接触部上形成导电粘合层,微型发光二极管由导电粘合层吸附。A conductive adhesive layer is formed on the metal contact portion, and the micro light-emitting diode is adsorbed by the conductive adhesive layer.

进一步地,可伸缩基底为记忆合金形成的基底,记忆合金为Cu/Zn/Ga合金、 In和Ti合金、Au/Cu/Zn合金的一种。Further, the stretchable substrate is a substrate formed of a memory alloy, and the memory alloy is one of Cu/Zn/Ga alloy, In and Ti alloy, and Au/Cu/Zn alloy.

进一步地,可伸缩基底为弹性薄膜形成的基底。Further, the stretchable substrate is a substrate formed by an elastic film.

进一步地,导电粘合层采用点胶方式固定在金属接触部上。Further, the conductive adhesive layer is fixed on the metal contact portion by means of dispensing.

进一步地,驱动基板包括具有阵列设置的凹槽的驱动背板、位于凹槽内的下电极、位于凹槽内且位于下电极上的光敏导电层以及位于驱动背板上且位于相邻凹槽之间的低表面能层,步骤S1中,可伸缩吸头吸附的多个微型发光二极管放置在驱动基板的低表面能层上。Further, the driving substrate includes a driving backplane with grooves arranged in an array, a lower electrode located in the groove, a photosensitive conductive layer located in the groove and on the lower electrode, and a driving backplane located in the adjacent grooves. Between the low surface energy layers, in step S1, a plurality of miniature light-emitting diodes adsorbed by the retractable suction head are placed on the low surface energy layer of the driving substrate.

本发明还提供一种微型发光二极管显示器的制造方法,包括如下步骤:The present invention also provides a method for manufacturing a miniature light-emitting diode display, comprising the following steps:

S1:在驱动背板上形成阵列设置的凹槽;S1: The grooves for array setting are formed on the drive backplane;

S2:在驱动背板的凹槽内形成下电极;S2: the lower electrode is formed in the groove of the driving backplane;

S3:在驱动背板上且位于相邻凹槽之间形成低表面能层;S3: a low surface energy layer is formed on the driving backplane and between adjacent grooves;

S4:在下电极上形成光敏导电层;S4: forming a photosensitive conductive layer on the lower electrode;

S5:微型发光二极管转移至驱动背板上的光敏导电层上并固化微型发光二极管。S5: The micro light emitting diodes are transferred to the photosensitive conductive layer on the driving backplane and the micro light emitting diodes are cured.

进一步地,步骤S4中,光敏导电层的上表面不高于低表面能层的上表面。Further, in step S4, the upper surface of the photosensitive conductive layer is not higher than the upper surface of the low surface energy layer.

进一步地,步骤S4中,当光照的情况下固化,光敏导电层为包括光敏层和掺杂在光敏层中的金属球或纳米银材料形成的层状结构。Further, in step S4, when cured under light, the photosensitive conductive layer is a layered structure including a photosensitive layer and a metal ball or nano-silver material doped in the photosensitive layer.

进一步地,光敏导电层的材料可以为丙烯酸酯类预聚物、活性单体和光引发剂混合后的材料。Further, the material of the photosensitive conductive layer may be a material obtained by mixing an acrylate-based prepolymer, an active monomer and a photoinitiator.

本发明在不进行封装的情况进行检测,易于修补,且不需要微型发光二极管缺失点的检测,节省时间和成本;提高修补效率,能同时修补所有缺失点。The present invention performs detection without encapsulation, is easy to repair, does not require detection of missing points of micro light emitting diodes, saves time and cost, improves repairing efficiency, and can repair all missing points at the same time.

附图说明Description of drawings

图1和图2为本发明微型发光二极管显示器的修补方法第一实施例的步骤之一的结构示意图;FIG. 1 and FIG. 2 are schematic structural diagrams of one of the steps of the first embodiment of the repairing method of the micro LED display according to the present invention;

图3为本发明微型发光二极管显示器的修补方法第一实施例的步骤之二的结构示意图;FIG. 3 is a schematic structural diagram of step 2 of the first embodiment of the repairing method for the micro LED display of the present invention;

图4为本发明微型发光二极管显示器的修补方法第一实施例的步骤之三的结构示意图;FIG. 4 is a schematic structural diagram of step 3 of the first embodiment of the repairing method for the miniature light-emitting diode display of the present invention;

图5为本发明微型发光二极管显示器的修补方法第二实施例的步骤之一的结构示意图;FIG. 5 is a schematic structural diagram of one of the steps of the second embodiment of the repairing method for the miniature light-emitting diode display of the present invention;

图6为本发明微型发光二极管显示器的修补方法第二实施例的步骤之二的结构示意图;FIG. 6 is a schematic structural diagram of step 2 of the second embodiment of the repairing method for the miniature light-emitting diode display according to the present invention;

图7为本发明微型发光二极管显示器的修补方法第二实施例的步骤之三的结构示意图;FIG. 7 is a schematic structural diagram of step 3 of the second embodiment of the repairing method for the miniature light-emitting diode display of the present invention;

图8为本发明微型发光二极管显示器的修补方法第二实施例的步骤之四的结构示意图;FIG. 8 is a schematic structural diagram of step 4 of the second embodiment of the repairing method for the miniature light-emitting diode display of the present invention;

图9为本发明微型发光二极管显示器的修补方法第二实施例的步骤之五的结构示意图;FIG. 9 is a schematic structural diagram of step 5 of the second embodiment of the repairing method for the miniature light-emitting diode display of the present invention;

图10为本发明可伸缩吸头的制造方法的步骤之一的结构示意图;10 is a schematic structural diagram of one of the steps of the manufacturing method of the retractable suction head of the present invention;

图11为本发明可伸缩吸头的制造方法的步骤之二的结构示意图。FIG. 11 is a schematic structural diagram of the second step of the manufacturing method of the retractable suction head of the present invention.

具体实施方式Detailed ways

下面结合附图和具体实施例,进一步阐明本发明,应理解这些实施例仅用于说明本发明而不用于限制本发明的范围,在阅读了本发明之后,本领域技术人员对本发明的各种等价形式的修改均落于本申请所附权利要求所限定的范围。Below in conjunction with the accompanying drawings and specific embodiments, the present invention will be further clarified. It should be understood that these embodiments are only used to illustrate the present invention and not to limit the scope of the present invention. Modifications of equivalent forms all fall within the scope defined by the appended claims of this application.

为使图面简洁,各图中只示意性地表示出了与本发明相关的部分,它们并不代表其作为产品的实际结构。另外,以使图面简洁便于理解,在有些图中具有相同结构或功能的部件,仅示意性地绘示了其中的一个,或仅标出了其中的一个。在本文中,“一个”不仅表示“仅此一个”,也可以表示“多于一个”的情形。In order to keep the drawings concise, the drawings only schematically show the parts related to the present invention, and they do not represent its actual structure as a product. In addition, in order to make the drawings concise and easy to understand, in some drawings, only one of the components having the same structure or function is schematically shown, or only one of them is marked. As used herein, "one" not only means "only one", but also "more than one".

本发明一种微型发光二极管显示器的修补方法,包括如下步骤:A method for repairing a miniature light-emitting diode display of the present invention comprises the following steps:

S1:如图1和图2所示,可伸缩吸头200吸附多个微型发光二极管1且将每个微型发光二极管1放置在驱动基板100上的相邻微型发光二极管1之间的位置上;S1: As shown in FIG. 1 and FIG. 2 , the retractable suction head 200 adsorbs a plurality of micro light emitting diodes 1 and places each micro light emitting diode 1 at a position between adjacent micro light emitting diodes 1 on the driving substrate 100;

其中,可伸缩吸头200包括可伸缩基底201、位于可伸缩基底201上且阵列设置的金属接触部202以及位于金属接触部202上的导电粘合层203,微型发光二极管1由导电粘合层203吸附。The retractable suction head 200 includes a retractable base 201, a metal contact portion 202 located on the retractable base 201 and arranged in an array, and a conductive adhesive layer 203 located on the metal contact portion 202. The micro light-emitting diode 1 is composed of a conductive adhesive layer. 203 adsorption.

导电粘合层203采用点胶方式固定在金属接触部202上,金属接触部202 的材料为金或银或铜等,可伸缩基底201为记忆合金形成的基底或弹性薄膜形成的基底,记忆合金为Cu/Zn/Ga合金、In和Ti合金、Au/Cu/Zn合金的一种。The conductive adhesive layer 203 is fixed on the metal contact portion 202 by means of dispensing. The material of the metal contact portion 202 is gold, silver or copper. It is one of Cu/Zn/Ga alloy, In and Ti alloy, and Au/Cu/Zn alloy.

S2:如图3所示,改变可伸缩吸头200的温度使得可伸缩吸头200产生弹性形变,当驱动基板100的放置微型发光二极管1的位置上存在微型发光二极管,则驱动基板100上的微型发光二极管1把可伸缩吸头200上对应的微型发光二极管挡住使其无法移动;当驱动基板100的放置微型发光二极管1的位置上缺少微型发光二极管,则可伸缩吸头200上对应的微型发光二极管移动至缺少微型发光二极管的位置上;S2: As shown in FIG. 3 , changing the temperature of the retractable suction head 200 makes the retractable suction head 200 elastically deform. The micro LED 1 blocks the corresponding micro LED on the retractable tip 200 so that it cannot move; when the micro LED is missing from the position where the micro LED 1 is placed on the driving substrate 100, the corresponding micro LED on the retractable tip 200 The LED is moved to the position where the micro LED is missing;

其中,微型发光二极管1移动的距离根据控制的温度进行确定。如图1所示,驱动基板100存在缺少微型发光二极管的位置A,可伸缩基底201加热后可以产生位移的改变,控制可伸缩基底201的温度,使得金属接触部202、导电粘合层 203和对应的微型发光二极管1一起移动至位置A处。Wherein, the moving distance of the micro light-emitting diode 1 is determined according to the controlled temperature. As shown in FIG. 1 , the driving substrate 100 has a position A that lacks micro light-emitting diodes. The displacement of the retractable substrate 201 can be changed after heating. The temperature of the retractable substrate 201 is controlled so that the metal contact portion 202, the conductive adhesive layer 203 and the The corresponding miniature light-emitting diodes 1 are moved to the position A together.

当可伸缩吸头200的微型发光二极管移动至没有缺少微型发光二极管的位置上,可伸缩吸头200的微型发光二极管被驱动基板100的微型发光二极管挡住使其无法移动,这是由于可伸缩基底201具有伸缩性,将微型发光二极管填补进缺失位置,快速完成修补。When the micro LEDs of the retractable tip 200 move to a position where there is no shortage of micro LEDs, the micro LEDs of the retractable tip 200 are blocked by the micro LEDs of the driving substrate 100 and cannot move, because the retractable base The 201 is flexible and can fill in the missing positions with tiny LEDs for quick repairs.

S3:如图4所示,给微型发光二极管两端进行通电,点亮微型发光二极管1 使得微型发光二极管1固定在驱动背板100上;S3: As shown in FIG. 4 , energize both ends of the miniature light-emitting diode to light up the miniature light-emitting diode 1 so that the miniature light-emitting diode 1 is fixed on the driving backplane 100;

S4:移走可伸缩吸头200。S4: The retractable tip 200 is removed.

通过上述步骤完成对驱动基板100上缺少的微型发光二极管1进行修补,且不需要提前进行微型发光二极管缺点位置的检测。Repairing the missing micro light emitting diode 1 on the driving substrate 100 is completed through the above steps, and there is no need to detect the defective position of the micro light emitting diode in advance.

步骤S3中,“给微型发光二极管两端进行通电”的意思是位于驱动背板100 上的所有微型发光二极管都进行通电。In step S3, "energizing both ends of the micro-LEDs" means that all the micro-LEDs on the driving backplane 100 are energized.

驱动基板100包括具有阵列设置的凹槽11的驱动背板10、位于凹槽11内的下电极20、位于凹槽11内且位于下电极20上的光敏导电层40以及位于驱动背板10上且位于相邻凹槽11之间的低表面能层30,光敏导电层40的上表面不高于低表面能层30的上表面。The driving substrate 100 includes a driving backplane 10 having grooves 11 arranged in an array, lower electrodes 20 located in the grooves 11 , a photosensitive conductive layer 40 located in the grooves 11 and on the lower electrodes 20 , and on the driving backplane 10 And the upper surface of the photosensitive conductive layer 40 of the low surface energy layer 30 located between the adjacent grooves 11 is not higher than the upper surface of the low surface energy layer 30 .

相邻凹槽11之间的距离不小于每颗微型发光二极管的最大宽度。低表面能层30的材料是聚四氟乙烯、氟化乙烯丙烯共聚物和过氟烷基化物的一种或多种组合。The distance between adjacent grooves 11 is not less than the maximum width of each micro-LED. The material of the low surface energy layer 30 is one or more combinations of polytetrafluoroethylene, fluorinated ethylene propylene copolymer and perfluoroalkylate.

步骤S1中,可伸缩吸头200吸附的多个微型发光二极管1放置在驱动基板 100的低表面能层30上。In step S1, the plurality of micro light emitting diodes 1 adsorbed by the retractable suction head 200 are placed on the low surface energy layer 30 of the driving substrate 100.

本发明还提供一种微型发光二极管显示器的制造方法,包括如下步骤:The present invention also provides a method for manufacturing a miniature light-emitting diode display, comprising the following steps:

S1:如图5所示,在驱动背板10上形成阵列设置的凹槽11;S1: As shown in FIG. 5 , a groove 11 arranged in an array is formed on the driving backplane 10;

其中,采用湿蚀刻技术在驱动背板10形式阵列设置的凹槽11。Among them, the grooves 11 arranged in an array in the form of the driving backplane 10 are formed by wet etching technology.

S2:如图6所示,在驱动背板10的凹槽11内形成下电极20;S2: As shown in FIG. 6, the lower electrode 20 is formed in the groove 11 of the driving backplane 10;

S3:如图7所示,在驱动背板10上且位于相邻凹槽11之间形成低表面能层 30;S3: As shown in FIG. 7 , a low surface energy layer 30 is formed on the driving backplane 10 and between adjacent grooves 11;

其中,通过曝光和显影等方式制作图案化的低表面能层30。Wherein, the patterned low surface energy layer 30 is fabricated by means of exposure, development and the like.

S4:如图8所示,在下电极20上形成光敏导电层40,光敏导电层40的上表面不高于低表面能层30的上表面;S4: As shown in FIG. 8 , a photosensitive conductive layer 40 is formed on the lower electrode 20, and the upper surface of the photosensitive conductive layer 40 is not higher than the upper surface of the low surface energy layer 30;

其中,在下电极20的上方制作光敏导电层40,当光照的情况下固化,光敏导电层40为包括光敏层和掺杂在光敏层中的金属球或纳米银材料形成的层状结构,光敏导电层40的材料可以为丙烯酸酯类预聚物、活性单体和光引发剂混合后的材料,光引发剂为可见光引发剂。也就是说,在光照的情况下,光敏导电层 40可以使得微型发光二极管固定在光敏导电层40上。Wherein, a photosensitive conductive layer 40 is made above the lower electrode 20, and cured when exposed to light, the photosensitive conductive layer 40 is a layered structure including a photosensitive layer and metal balls or nano-silver materials doped in the photosensitive layer, and the photosensitive conductive layer 40 is formed. The material of the layer 40 can be a mixture of acrylate prepolymer, active monomer and photoinitiator, and the photoinitiator is a visible light initiator. That is to say, in the case of illumination, the photosensitive conductive layer 40 can make the miniature light-emitting diodes fixed on the photosensitive conductive layer 40.

S5:如图9所示,微型发光二极管50转移至驱动背板10上的光敏导电层 40上并固化微型发光二极管50。S5: As shown in FIG. 9 , the micro LEDs 50 are transferred to the photosensitive conductive layer 40 on the driving backplane 10 and the micro LEDs 50 are cured.

以上步骤形成微型发光二极管显示器。The above steps form a miniature light emitting diode display.

本发明还提供一种可伸缩吸头的制造方法,包括如下步骤:The present invention also provides a method for manufacturing a retractable suction head, comprising the following steps:

S1:如图10所示,在可伸缩基底201上形成阵列设置的金属接触部202;S1: As shown in FIG. 10 , metal contact portions 202 arranged in an array are formed on the retractable substrate 201;

S2:如图11所示,在金属接触部202上形成导电粘合层203。S2 : As shown in FIG. 11 , a conductive adhesive layer 203 is formed on the metal contact portion 202 .

微型发光二极管1由导电粘合层203吸附。The micro light-emitting diode 1 is adsorbed by the conductive adhesive layer 203 .

本发明在不进行封装的情况进行检测,易于修补,且不需要微型发光二极管缺失点的检测,节省时间和成本;提高修补效率,能同时修补所有缺失点。The present invention performs detection without encapsulation, is easy to repair, does not require detection of missing points of micro light emitting diodes, saves time and cost, improves repairing efficiency, and can repair all missing points at the same time.

以上详细描述了本发明的优选实施方式,但是本发明并不限于上述实施方式中的具体细节,在本发明的技术构思范围内,可以对本发明的技术方案进行多种等同变换(如数量、形状、位置等),这些等同变换均属于本发明的保护范围。The preferred embodiments of the present invention are described in detail above, but the present invention is not limited to the specific details of the above-mentioned embodiments. Within the scope of the technical concept of the present invention, various equivalent transformations (such as quantity, shape, etc.) can be performed on the technical solutions of the present invention. , position, etc.), these equivalent transformations all belong to the protection scope of the present invention.

Claims (10)

1. A method for repairing a micro light-emitting diode display is characterized by comprising the following steps:
s1: the retractable suction head adsorbs a plurality of micro light-emitting diodes and places each micro light-emitting diode at a position between adjacent micro light-emitting diodes on the driving substrate;
s2: the temperature of the telescopic sucker is changed to enable the telescopic sucker to generate elastic deformation, and when the micro light-emitting diode exists at the position of the driving substrate where the micro light-emitting diode is placed, the micro light-emitting diode on the driving substrate blocks the corresponding micro light-emitting diode on the telescopic sucker so that the micro light-emitting diode cannot move; when the position of the driving substrate, where the micro light-emitting diode is placed, is short of the micro light-emitting diode, the corresponding micro light-emitting diode on the telescopic sucker moves to the position where the micro light-emitting diode is short of the driving substrate;
s3: electrifying two ends of the micro light-emitting diode, and lightening the micro light-emitting diode to fix the micro light-emitting diode on the driving substrate;
s4: the retractable suction head is removed.
2. The method for repairing a micro light emitting diode display of claim 1, wherein the method for manufacturing the retractable suction head in step S1 comprises:
forming metal contact parts arranged in an array on a telescopic substrate;
and forming a conductive bonding layer on the metal contact part, wherein the micro light-emitting diode is adsorbed by the conductive bonding layer.
3. The method of claim 2, wherein the stretchable substrate is a substrate made of a memory alloy, and the memory alloy is one of Cu/Zn/Ga alloy, In and Ti alloy, and Au/Cu/Zn alloy.
4. The method of repairing a micro light-emitting diode display device according to claim 2, wherein the stretchable substrate is a substrate formed of an elastic film.
5. The method of repairing a micro led display of claim 2, wherein the conductive adhesive layer is fixed on the metal contact portion by dispensing.
6. The method for repairing a micro led display according to claim 1, wherein the driving substrate comprises a driving back plate having a plurality of grooves arranged in an array, a lower electrode located in the grooves, a photosensitive conductive layer located in the grooves and on the lower electrode, and a low surface energy layer located on the driving back plate and between adjacent grooves, and in step S1, the plurality of micro leds attracted by the retractable attraction head are placed on the low surface energy layer of the driving substrate.
7. A manufacturing method of a micro light-emitting diode display is characterized by comprising the following steps:
s1: forming grooves arranged in an array on the driving back plate;
s2: forming a lower electrode in the groove of the driving back plate;
s3: forming a low surface energy layer on the driving back plate and between adjacent grooves;
s4: forming a photosensitive conductive layer on the lower electrode;
s5: and transferring the micro light-emitting diodes onto the photosensitive conductive layer on the driving back plate and curing the micro light-emitting diodes.
8. The method for manufacturing a micro light-emitting diode display according to claim 7, wherein in step S4, the upper surface of the photosensitive conductive layer is not higher than the upper surface of the low surface energy layer.
9. The method for manufacturing a micro light-emitting diode display according to claim 7, wherein in step S4, the photosensitive conductive layer is a layered structure formed by a photosensitive layer and metal balls or nano silver materials doped in the photosensitive layer when cured by light.
10. The method of claim 7, wherein the photosensitive conductive layer is a mixture of an acrylate prepolymer, a reactive monomer, and a photoinitiator.
CN202010606852.0A 2020-06-29 2020-06-29 Method for manufacturing and repairing micro light-emitting diode display Pending CN111883472A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010606852.0A CN111883472A (en) 2020-06-29 2020-06-29 Method for manufacturing and repairing micro light-emitting diode display

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010606852.0A CN111883472A (en) 2020-06-29 2020-06-29 Method for manufacturing and repairing micro light-emitting diode display

Publications (1)

Publication Number Publication Date
CN111883472A true CN111883472A (en) 2020-11-03

Family

ID=73157255

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010606852.0A Pending CN111883472A (en) 2020-06-29 2020-06-29 Method for manufacturing and repairing micro light-emitting diode display

Country Status (1)

Country Link
CN (1) CN111883472A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107706221A (en) * 2017-09-28 2018-02-16 深圳市华星光电半导体显示技术有限公司 The preparation method and OLED display of OLED display
CN109148506A (en) * 2018-08-24 2019-01-04 上海天马微电子有限公司 Micro LED transfer method, display panel and display device
CN110233168A (en) * 2018-06-22 2019-09-13 友达光电股份有限公司 Organic light emitting display
CN110444648A (en) * 2019-07-29 2019-11-12 南京中电熊猫平板显示科技有限公司 Micro-led array shows backboard and its manufacturing method and restorative procedure

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107706221A (en) * 2017-09-28 2018-02-16 深圳市华星光电半导体显示技术有限公司 The preparation method and OLED display of OLED display
CN110233168A (en) * 2018-06-22 2019-09-13 友达光电股份有限公司 Organic light emitting display
CN109148506A (en) * 2018-08-24 2019-01-04 上海天马微电子有限公司 Micro LED transfer method, display panel and display device
CN110444648A (en) * 2019-07-29 2019-11-12 南京中电熊猫平板显示科技有限公司 Micro-led array shows backboard and its manufacturing method and restorative procedure

Similar Documents

Publication Publication Date Title
CN108493154B (en) Manufacturing method of Micro LED display panel and Micro LED display panel
US11362249B2 (en) Display module and manufacturing method thereof
CN109920812B (en) Electronic device and method for manufacturing the same
US20190181122A1 (en) Electronic device and method of manufacturing the same
CN106058010A (en) Micro light emitting diode array's transfer printing method
TWI234415B (en) Light emitting display panel and method of manufacturing the same
CN109599463A (en) A kind of pick-up structure and transfer method for the transfer of Micro-LED flood tide
CN108352143A (en) The assembling of semiconductor devices
KR102659865B1 (en) Display module, method of manufacturing display module
US11404616B2 (en) Micro LED display module with excellent color tone and high brightness
US10672829B2 (en) Manufacturing method of LED display device
CN111490143B (en) A display backplane and its manufacturing method, and a miniature light-emitting diode display
GB2541970A (en) Display manufacture
KR102830404B1 (en) Method of manufacturing display apparatus, display apparatus, and structure for manufacturing display apparatus
CN106229326A (en) Curved substrate transfers method and the manufacture method of the micro-LED display panel of curved surface of micro-light emitting diode
CN107768498B (en) Light emitting diode display device and manufacturing method thereof
CN105023522A (en) Display panel and repairing method thereof
CN110911436B (en) A transfer device and transfer method for driving backplane and light-emitting diodes
CN112908897A (en) MicroLED chip adhesion type array transfer method based on maskless photoetching
CN109671670B (en) Method and system for massive arrangement of micro-components
CN108172590A (en) Micro LED array device and detection method thereof
US11508780B2 (en) Method of manufacturing display apparatus, display apparatus, and structure for manufacturing display apparatus
KR102551062B1 (en) Micro light emitting diode, display panel and transfer method thereof
CN112670310B (en) Display and method of manufacturing the same
CN111509108A (en) Detection substrate and manufacturing method thereof, display back plate and manufacturing method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20201103

WD01 Invention patent application deemed withdrawn after publication