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CN106058010A - Micro light emitting diode array's transfer printing method - Google Patents

Micro light emitting diode array's transfer printing method Download PDF

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CN106058010A
CN106058010A CN201610597458.9A CN201610597458A CN106058010A CN 106058010 A CN106058010 A CN 106058010A CN 201610597458 A CN201610597458 A CN 201610597458A CN 106058010 A CN106058010 A CN 106058010A
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micro
light emitting
emitting diode
substrate
transferring method
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CN106058010B (en
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陈黎暄
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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    • H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H—ELECTRICITY
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    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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    • H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
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    • H10H20/0364—Manufacture or treatment of packages of interconnections

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Abstract

The invention provides a micro light emitting diode array's transfer printing method. A plurality of projections are arranged on a receiving substrate; micro light emitting diodes are placed on the corresponding projections on the receiving substrate; therefore, for the same transfer head, the change in the arraying manner of a plurality of projections on the receiving substrate make possible the transfer printing of micro light emitting diode arrays in different arraying manners on a receiving substrate.

Description

微发光二极管阵列的转印方法Transfer printing method of micro light emitting diode array

技术领域technical field

本发明涉及显示技术领域，尤其涉及一种微发光二极管阵列的转印方法。The invention relates to the field of display technology, in particular to a transfer printing method of a micro light emitting diode array.

背景技术Background technique

微发光二极管(Micro LED)是一种尺寸在几微米到几百微米之间的器件，由于其较普通LED的尺寸要小很多，从而使得单一的LED作为像素(Pixel)用于显示成为可能，Micro LED显示器便是一种以高密度的Micro LED阵列作为显示像素阵列来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，Micro LED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但Micro LED显示器相比于OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。Micro LED (Micro LED) is a device with a size between several microns and hundreds of microns. Because it is much smaller than ordinary LEDs, it is possible to use a single LED as a pixel (Pixel) for display. A Micro LED display is a display that uses a high-density Micro LED array as a display pixel array to achieve image display. Like a large-scale outdoor LED display, each pixel can be addressed and individually driven to light up. It can be regarded as a A reduced version of the outdoor LED display, which reduces the pixel distance from millimeters to microns. Micro LED displays are self-luminous displays like Organic Light-Emitting Diode (OLED) displays, but Micro LED displays are compared to OLED displays also have the advantages of better material stability, longer life, and no image burn-in, and are considered to be the biggest competitor of OLED displays.

由于晶格匹配的原因，Micro LED器件必须先在蓝宝石类的供给基板上通过分子束外延的方法生长出来，随后通过激光剥离(Laser lift-off，LLO)技术将微发光二极管裸芯片(bare chip)从供给基板上分离开，然后通过微转印(Micro Transfer Print，NTP)技术将其转移到已经预先制备完成电路图案的接受基板上，形成Micro LED阵列，进而做成Micro LED显示面板。其中，微转印的基本原理大致为：使用具有图案化的传送头(Transferhead)，例如具有凸起结构的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)类传送头，通过具有粘性的PDMS传送层(Transfer layer)将Micro LED bare chip从供给基板吸附起来，然后将PDMS传送头与接受基板进行对位，随后将PDMS传送头所吸附的Micro LED barechip贴附到接受基板预设的位置上，再将PDMS传送头从接受基板上剥离，即可完成MicroLED bare chip的转移，形成Micro LED阵列。Due to lattice matching, Micro LED devices must first be grown on a sapphire substrate by molecular beam epitaxy, and then the micro light emitting diode bare chip (bare chip) must be grown by laser lift-off (LLO) technology. ) from the supply substrate, and then transfer it to a receiving substrate with a pre-prepared circuit pattern by Micro Transfer Print (NTP) technology to form a Micro LED array, and then make a Micro LED display panel. Among them, the basic principle of micro-transfer printing is as follows: use a patterned transfer head (Transferhead), such as a polydimethylsiloxane (Polydimethylsiloxane, PDMS) type transfer head with a raised structure, and transfer it through viscous PDMS. The Transfer layer absorbs the Micro LED bare chip from the supply substrate, then aligns the PDMS transfer head with the receiving substrate, and then attaches the Micro LED barechip adsorbed by the PDMS transfer head to the preset position of the receiving substrate. Then peel off the PDMS delivery head from the receiving substrate to complete the transfer of the MicroLED bare chip to form a MicroLED array.

目前，来自爱尔兰的X-celeprint、美国德州大学等都曾发表过有关Micro LED显示器的研究成果。苹果公司于2014年正式收购具有Micro LED技术的LuxVue后，引发业界开始关注于Micro LED的技术优势，作为一家掌握Micro LED Transfer Printing的高技术公司，LuxVue与X-Celeprint所使用的微转移技术差别较大。X-Celeprint主要利用PDMS等膜层结构的吸附力进行转移动作，而LuxVue通过在传送头的凸起上通电，利用静电力来吸附Micro LED等器件。At present, X-celeprint from Ireland and the University of Texas have published research results on Micro LED displays. After Apple officially acquired LuxVue with Micro LED technology in 2014, the industry began to pay attention to the technical advantages of Micro LED. As a high-tech company that masters Micro LED Transfer Printing, the micro transfer technology used by LuxVue and X-Celeprint is different. larger. X-Celeprint mainly uses the adsorption force of PDMS and other film structures to carry out the transfer action, while LuxVue uses electrostatic force to adsorb Micro LED and other devices by electrifying the bumps of the transfer head.

其中，对于PDMS类传送头的微转印方式，由于PDMS膜层上的凸起结构往往通过光刻等技术手段制成，其特点在于制备完成后将很难改动，使得一种PDMS传送头上的凸起排列图案(Pattern)往往对应一种微器件(Micro Device)在接受衬底上的排布方式。那么当使用PDMS类传送头对Micro LED进行转移时，由于PDMS膜层的粘附力在各处都近似，使得一次转印的图案结构被确定以后，无法适应于其他的图案结构。Among them, for the micro-transfer method of PDMS-type transfer head, since the raised structure on the PDMS film layer is often made by technical means such as photolithography, its characteristic is that it will be difficult to change after the preparation is completed, so that a PDMS transfer head The raised arrangement pattern (Pattern) often corresponds to an arrangement method of a micro device (Micro Device) on the receiving substrate. Then, when using a PDMS-type transfer head to transfer Micro LEDs, since the adhesion of the PDMS film layer is similar everywhere, the pattern structure of the primary transfer cannot be adapted to other pattern structures after it is determined.

发明内容Contents of the invention

本发明的目的在于提供一种微发光二极管阵列的转印方法，可使用同一个PDMS传送头在接受基板上转印不同排列方式的微发光二极管阵列。The purpose of the present invention is to provide a method for transferring micro-LED arrays, which can use the same PDMS transfer head to transfer micro-LED arrays in different arrangements on a receiving substrate.

为实现上述目的，本发明提供了一种微发光二极管阵列的转印方法，包括如下步骤：In order to achieve the above object, the present invention provides a transfer printing method of a micro light emitting diode array, comprising the following steps:

步骤1、提供传送头、及载体基板，所述载体基板上设有数个微发光二极管，利用所述传送头拾取所述载体基板上的微发光二极管；Step 1, providing a transfer head and a carrier substrate, the carrier substrate is provided with several micro light emitting diodes, and using the transfer head to pick up the micro light emitting diodes on the carrier substrate;

步骤2、提供接受基板，在所述接受基板上形成数个阵列排布的接受凸起；Step 2, providing a receiving substrate, and forming several receiving protrusions arranged in an array on the receiving substrate;

步骤3、将载有微发光二极管的传送头与所述接受基板进行对位，将传送头上的微发光二极管置于相对应的接受凸起上，从而对应所述数个接受凸起的阵列排布方式，完成微发光二极管阵列的转印。Step 3. Align the transfer head carrying the micro-light emitting diodes with the receiving substrate, and place the micro-light emitting diodes on the transfer head on the corresponding receiving bumps, so as to correspond to the array of several receiving bumps Arrangement way to complete the transfer printing of the micro light emitting diode array.

所述步骤2中所形成的接受凸起的材料为氮化硅、或氧化硅。The material for accepting the protrusions formed in the step 2 is silicon nitride or silicon oxide.

所述步骤2中所形成的接受凸起的高度为0.01μm-100μm。The height of the receiving protrusion formed in the step 2 is 0.01 μm-100 μm.

所述步骤2中，采用光刻工艺在所述接受基板上形成所述数个接受凸起。In the step 2, the plurality of receiving protrusions are formed on the receiving substrate by using a photolithography process.

所述步骤2还包括，通过光刻工艺在所述接受凸起、及接受基板上形成导线。The step 2 further includes forming wires on the receiving bumps and the receiving substrate through a photolithography process.

所述导线的材料为氧化铟锡。The material of the wire is indium tin oxide.

所述步骤2还包括，在所述导线上设置低熔点焊盘。The step 2 also includes setting a low melting point pad on the wire.

所述微发光二极管具有金属电极，所述步骤3还包括，在将微发光二极管置于所述接受凸起上之后，进行加热处理，使得导线上的低熔点焊盘熔化，从而将微发光二极管的金属电极与所述接受凸起上的导线导通，并使得所述微发光二极管固定于所述接受凸起上。The micro-light emitting diode has a metal electrode, and the step 3 further includes, after placing the micro-light-emitting diode on the receiving bump, performing heat treatment to melt the low-melting-point pad on the wire, so that the micro-light-emitting diode The metal electrode of the metal electrode conducts with the wire on the receiving protrusion, and makes the micro light emitting diode be fixed on the receiving protrusion.

所述步骤2中提供的接受基板为TFT阵列基板。The receiving substrate provided in step 2 is a TFT array substrate.

所述传送头为PDMS传送头，包括PDMS膜层，所述PDMS膜层具有数个阵列排布的凸起结构，所述步骤1中通过所述PDMS膜层的凸起结构对所述微发光二极管进行拾取。The transfer head is a PDMS transfer head, including a PDMS film layer, the PDMS film layer has several raised structures arranged in an array, and in the step 1, the micro-luminescence is controlled by the raised structure of the PDMS film layer. diode for pickup.

本发明的有益效果：本发明提供了一种微发光二极管阵列的转印方法，在接受基板上设置数个接受凸起，微发光二极管被置于接受基板上相应的接受凸起上，因此，对于同一个传送头，通过改变数个接受凸起在接受基板上的排列方式，便可实现在接受基板上转印不同排列方式的微发光二极管阵列。Beneficial effects of the present invention: the present invention provides a transfer printing method of a micro-LED array, in which several receiving protrusions are arranged on the receiving substrate, and the micro-emitting diodes are placed on the corresponding receiving protrusions on the receiving substrate, therefore, For the same transfer head, by changing the arrangement of several receiving protrusions on the receiving substrate, micro light-emitting diode arrays with different arrangements can be transferred on the receiving substrate.

附图说明Description of drawings

为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。In order to further understand the features and technical content of the present invention, please refer to the following detailed description and accompanying drawings of the present invention. However, the accompanying drawings are provided for reference and illustration only, and are not intended to limit the present invention.

附图中，In the attached picture,

图1为本发明的微发光二极管阵列的转印方法的流程示意图；Fig. 1 is the schematic flow chart of the transfer printing method of the micro light-emitting diode array of the present invention;

图2-3为本发明的微发光二极管阵列的转印方法的步骤1的示意图；Fig. 2-3 is the schematic diagram of the step 1 of the transfer printing method of the micro light emitting diode array of the present invention;

图4-6为本发明的微发光二极管阵列的转印方法的步骤3的示意图。4-6 are schematic diagrams of Step 3 of the micro-LED array transfer method of the present invention.

具体实施方式detailed description

为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。In order to further illustrate the technical means adopted by the present invention and its effects, the following describes in detail in conjunction with preferred embodiments of the present invention and accompanying drawings.

请参阅图1，本发明提供一种微发光二极管阵列的转印方法，包括如下步骤：Please refer to Fig. 1, the present invention provides a transfer printing method of a micro light emitting diode array, comprising the following steps:

步骤1、如图2-3所示，提供传送头50、及载体基板10，所述载体基板10上设有数个微发光二极管40，利用所述传送头50拾取所述载体基板10上的微发光二极管40。Step 1, as shown in Figures 2-3, provide a transfer head 50 and a carrier substrate 10, on which several micro light-emitting diodes 40 are arranged, and use the transfer head 50 to pick up the micro LEDs on the carrier substrate 10. LED 40.

具体地，所述传送头50可以为PDMS传送头，包括PDMS膜层，所述PDMS膜层具有数个阵列排布的凸起结构51，所述步骤1中利用所述PDMS膜层的凸起结构51通过吸附力对所述微发光二极管40进行拾取。除此之外，所述传送头50还可以为其他类型的传送头，比如通过静电力来进行拾取的传送头。Specifically, the transfer head 50 may be a PDMS transfer head, including a PDMS film layer, and the PDMS film layer has several raised structures 51 arranged in an array. In the step 1, the protrusions of the PDMS film layer are used The structure 51 picks up the micro light emitting diodes 40 through the adsorption force. In addition, the transfer head 50 may also be other types of transfer heads, such as a transfer head that picks up by electrostatic force.

具体地，在所述载体基板10上，所述微发光二极管40靠近载体基板10的一侧具有金属电极41。Specifically, on the carrier substrate 10 , the side of the micro light emitting diode 40 close to the carrier substrate 10 has a metal electrode 41 .

步骤2、提供接受基板20，在所述接受基板20上形成数个阵列排布的接受凸起21。Step 2, providing a receiving substrate 20 on which several receiving protrusions 21 arranged in an array are formed.

具体地，所述数个接受凸起21在接受基板20上构成接受凸起阵列，其中所述数个接受凸起21在在所述接受基板20上具体的排列方式，根据在接受基板20上所需要转印的微发光二极管阵列的排列方式而定。Specifically, the plurality of receiving protrusions 21 form an array of receiving protrusions on the receiving substrate 20, wherein the specific arrangement of the plurality of receiving protrusions 21 on the receiving substrate 20 depends on the arrangement on the receiving substrate 20. It depends on the arrangement of the micro-LED arrays to be transferred.

具体地，所述步骤2中所形成的接受凸起21的材料为氮化硅、或氧化硅等。Specifically, the material of the receiving protrusion 21 formed in the step 2 is silicon nitride or silicon oxide.

具体地，所述步骤2中所形成的接受凸起21的高度为0.01μm-100μm，从而使得后续将传送头50上的微发光二极管40转移到接受基板20时，仅接受基板20上的接受凸起21能够与微发光二极管40接触，而其他部分不能与微发光二极管40接触，使得微发光二极管40被相应置于接受凸起21上。Specifically, the height of the receiving protrusions 21 formed in the step 2 is 0.01 μm-100 μm, so that when the micro light-emitting diodes 40 on the transfer head 50 are transferred to the receiving substrate 20, only the receiving bumps on the substrate 20 are accepted. The protrusion 21 can be in contact with the micro light emitting diode 40 , while other parts cannot be in contact with the micro light emitting diode 40 , so that the micro light emitting diode 40 is placed on the receiving protrusion 21 accordingly.

具体地，所述步骤2中，采用光刻工艺在所述接受基板20上形成所述数个接受凸起21，所述光刻工艺具体包括光阻涂布、曝光、显影、及蚀刻等步骤。Specifically, in the step 2, the plurality of receiving protrusions 21 are formed on the receiving substrate 20 using a photolithography process, and the photolithography process specifically includes the steps of photoresist coating, exposure, development, and etching. .

具体地，所述步骤2还包括，通过光刻工艺在所述接受凸起21上形成导线22，在所述导线22上设置低熔点焊盘。Specifically, the step 2 further includes forming a wire 22 on the receiving protrusion 21 through a photolithography process, and setting a low melting point pad on the wire 22 .

具体地，所述导线22为具有导电性的材料，所述导线22的材料优选为氧化铟锡(ITO)。Specifically, the wire 22 is a conductive material, and the material of the wire 22 is preferably indium tin oxide (ITO).

步骤3、如图4-6所示，将载有微发光二极管40的传送头50与所述接受基板20进行对位，将传送头50上的微发光二极管40置于相对应的接受凸起21上，从而对应所述数个接受凸起21的阵列排布方式，完成微发光二极管阵列的转印。Step 3, as shown in Figures 4-6, align the transfer head 50 carrying the micro-LEDs 40 with the receiving substrate 20, and place the micro-light-emitting diodes 40 on the transfer head 50 on the corresponding receiving bumps 21, so that corresponding to the array arrangement of the plurality of receiving protrusions 21, the transfer of the micro-LED array is completed.

具体地，所述步骤3还包括，在将微发光二极管40置于所述接受凸起21上之后，进行加热处理，使得导线22上的低熔点焊盘熔化，从而将微发光二极管40的金属电极41与所述接受凸起21上的导线22导通，并使得所述微发光二极管40固定于所述接受凸起21上。Specifically, the step 3 also includes, after placing the micro-light emitting diode 40 on the receiving bump 21, performing heat treatment to melt the low-melting point pad on the wire 22, so that the metal of the micro-light emitting diode 40 The electrodes 41 are connected to the wires 22 on the receiving protrusions 21 , and make the micro light emitting diodes 40 fixed on the receiving protrusions 21 .

具体地，所述步骤2中提供的接受基板20为TFT阵列基板，从而在完成微发光二极管阵列的转印之后，可进一步用于制作微发光二极管显示器。Specifically, the receiving substrate 20 provided in step 2 is a TFT array substrate, so that after the transfer of the micro-LED array is completed, it can be further used to make a micro-LED display.

综上所述，本发明提供了一种微发光二极管阵列的转印方法，在接受基板上设置数个接受凸起，微发光二极管被置于接受基板上相应的接受凸起上，因此，对于同一个传送头，通过改变数个接受凸起在接受基板上的排列方式，便可实现在接受基板上转印不同排列方式的微发光二极管阵列。To sum up, the present invention provides a method for transferring micro-LED arrays. Several receiving bumps are set on the receiving substrate, and the micro-LEDs are placed on the corresponding receiving bumps on the receiving substrate. Therefore, for With the same transfer head, by changing the arrangement of several receiving protrusions on the receiving substrate, micro light-emitting diode arrays with different arrangements can be transferred on the receiving substrate.

以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。As mentioned above, for those of ordinary skill in the art, various other corresponding changes and deformations can be made according to the technical scheme and technical concept of the present invention, and all these changes and deformations should belong to the protection scope of the claims of the present invention .

Claims (10)

1. the printing transferring method of a micro-light emitting diode matrix, it is characterised in that comprise the steps:
Step 1, offer transfer head (50) and carrier substrate (10), described carrier substrate (10) is provided with several micro-light-emitting diodes Pipe (40), utilizes described transfer head (50) to pick up the micro-light emitting diode (40) on described carrier substrate (10)；
Step 2, offer accept substrate (20), accept the upper acceptance projection forming several array arrangements of substrate (20) described (21)；
Step 3, carry out para-position by being loaded with the transfer head (50) of micro-light emitting diode (40) with the described substrate (20) that accepts, will transmit Micro-light emitting diode (40) on head (50) is placed in corresponding acceptance protruding (21), thus corresponding described several acceptance projections (21) array arrangement mode, completes the transfer of micro-light emitting diode matrix.
The printing transferring method of micro-light emitting diode matrix the most as claimed in claim 1, it is characterised in that institute's shape in described step 2 The material of the acceptance become protruding (21) is silicon nitride or silicon oxide.
The printing transferring method of micro-light emitting diode matrix the most as claimed in claim 1, it is characterised in that institute's shape in described step 2 The height of the acceptance become protruding (21) is 0.01 μm-100 μm.
The printing transferring method of micro-light emitting diode matrix the most as claimed in claim 1, it is characterised in that in described step 2, uses Photoetching process accepts described several acceptance projection (21) of the upper formation of substrate (20) described.
The printing transferring method of micro-light emitting diode matrix the most as claimed in claim 1, it is characterised in that described step 2 also includes, Accept protruding (21) by photoetching process described and accept to be formed on substrate (20) wire (22).
The printing transferring method of micro-light emitting diode matrix the most as claimed in claim 5, it is characterised in that the material of described wire (22) Material is tin indium oxide.
The printing transferring method of micro-light emitting diode matrix the most as claimed in claim 5, it is characterised in that described step 2 also includes, Described wire (22) arranges low melting point pad.
The printing transferring method of micro-light emitting diode matrix the most as claimed in claim 7, it is characterised in that described micro-light emitting diode (40) having metal electrode (41), described step 3 also includes, being placed in by micro-light emitting diode (40), described acceptance is protruding (21) After on, carry out heat treated so that the low melting point pad fusing on wire (22), thus by the gold of micro-light emitting diode (40) Belong to electrode (41) and the described wire (22) accepted on protruding (21) conducting, and described micro-light emitting diode (40) is fixed on In described acceptance protruding (21).
The printing transferring method of micro-light emitting diode matrix the most as claimed in claim 1, it is characterised in that provide in described step 2 The substrate (20) that accepts be tft array substrate.
The printing transferring method of micro-light emitting diode matrix the most as claimed in claim 1, it is characterised in that described transfer head (50) For PDMS transfer head, including PDMS film layer, described PDMS film layer has the bulge-structure (51) of several array arrangement, described step By the bulge-structure (51) of described PDMS film layer, described micro-light emitting diode (40) is picked up in 1.
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