CN109410775A - A kind of micro- LED display panel, its production method and display device - Google Patents
A kind of micro- LED display panel, its production method and display device Download PDFInfo
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- CN109410775A CN109410775A CN201811243519.7A CN201811243519A CN109410775A CN 109410775 A CN109410775 A CN 109410775A CN 201811243519 A CN201811243519 A CN 201811243519A CN 109410775 A CN109410775 A CN 109410775A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 239000003292 glue Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 23
- 239000002096 quantum dot Substances 0.000 claims description 20
- 230000005284 excitation Effects 0.000 claims description 11
- 238000007711 solidification Methods 0.000 claims description 5
- 230000008023 solidification Effects 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 4
- 238000010023 transfer printing Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 89
- 239000012535 impurity Substances 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
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Abstract
The invention discloses a kind of micro- LED display panels, including first substrate；Form first electrode layer on the first substrate；The multiple micro- LED electrically isolated from one being formed in first electrode layer；Cured first conducting resinl, micro- LED are connected to the first electrode layer by cured first conducting resinl；Tft array substrate, is provided with that multiple TFT, the drain electrode of the TFT are electrically connected with micro- LED correspondingly with micro- LED.The invention also discloses the production method and display device of a kind of micro- LED display panel, the production yield of micro- LED display panel is can be improved in the present invention.
Description
Technical field
The present invention relates to field of display technology.More particularly, to a kind of micro- LED display panel, its production method and show
Showing device.
Background technique
Micro- LED display technique (Micro LED) is micromation LED array structure, has self-luminous display characteristic, has
The all solid state, long-life, low-power consumption, small volume, ultrahigh resolution, can be applied to the extreme environments such as high temperature or radiation at high brightness
Advantage.And not only efficiency is higher, lasts a long time by Micro LED, material be not easily susceptible to environment influence and it is relatively stable, can also keep away
Exempt to generate ghost phenomena etc., is widely used in the display fields such as display screen, backlight and illumination.
The production method of current Micro light-emitting diode display part usually makes Micro LED and Micro LED's respectively
Then Micro LED is transferred on control circuit substrate by way of repeatedly transferring, then is electrically connected by control circuit substrate
It connects.Due to needing repeatedly transfer, Micro LED easy damaged in multiple transfer process to cause the production of micro- light-emitting diode display part good
Rate is lower.
Summary of the invention
It is an object of the present invention to provide a kind of micro- LED display panels, good with the production for improving micro- light-emitting diode display part
Rate, it is another object of the present invention to provide a kind of production method of micro- LED display panel, an also purpose of the invention exists
In providing a kind of display device including micro- LED display panel.
In order to achieve the above objectives, the present invention adopts the following technical solutions:
One aspect of the present invention discloses a kind of micro- LED display panel, including
First substrate；
Form first electrode layer on the first substrate；
The multiple micro- LED electrically isolated from one being formed in first electrode layer；
Cured first conducting resinl, micro- LED are connected to the first electrode by cured first conducting resinl
Layer；With
Tft array substrate, be provided with micro- LED multiple TFT correspondingly, the drain electrode of the TFT with it is described
Micro- LED electrical connection.
Preferably, the display device further includes the pillar to form array arrangement on the first substrate, and described
One electrode layer covers the pillar；First conducting resinl is formed in the first electrode layer at the top of the pillar.
Preferably, the tft array substrate further includes second transparency electrode layer, and second transparency electrode layer is divided into each other
Be electrically isolated with the multiple TFT multiple second transparency electrodes correspondingly, the drain electrode of the TFT and the described second transparent electricity
Pole electrical connection；Cured second electrically conducting transparent glue, the second transparency electrode by the cured second electrically conducting transparent glue with
Corresponding micro- LED connection.
Preferably, the tft array substrate further includes that setting is transparent far from described second in the second transparency electrode layer
Photoluminescent layers on the surface of conducting resinl, the photoluminescent layers include the second quantum dot for exciting and emitting feux rouges by blue light
Region is excited by blue light and is emitted the third quantum dot region of green light and can penetrate the fourth region of blue light.
Preferably, the tft array substrate further include: setting is transparent far from described second in the second transparency electrode layer
Photoluminescent layers on the surface of conducting resinl, the photoluminescent layers include the light excitation by the first color and emit the second color
Light the second quantum dot region, by the first color light excite and emit the light of third color third quantum dot region and
Emit the 4th quantum dot region of the light of the 4th color by the light excitation of the first color.
Preferably, the light of first color is ultraviolet light or black light, and the light of second color is blue light, described
The light of third color is feux rouges, and the light of the 4th color is green light.
The invention also discloses a kind of production methods of micro- LED display panel, including
First electrode layer is formed on the first substrate；
Multiple cured first conducting resinls electrically isolated from one are formed in the first electrode layer；
It is formed on cured first conducting resinl electrically isolated from one and its one-to-one multiple micro- LED；
Form tft array substrate, be provided with micro- LED multiple TFT correspondingly, the drain electrode of the TFT with
Micro- LED electrical connection.
Preferably, forming first electrode layer on the first substrate includes forming the convex of array arrangement on the first substrate
Column, the first electrode layer cover the pillar；Electrically isolated from one multiple cured are formed in the first electrode layer
One conducting resinl includes forming first conducting resinl in first electrode layer at the top of the pillar.
Preferably, it is formed on cured first conducting resinl electrically isolated from one one-to-one multiple micro- with it
LED includes forming LED array by silicon-on-insulator process；It is formed in the first electrode layer at the top of the pillar conductive ultraviolet
Glue；LED corresponding with pillar position in LED array is transferred in the conductive ultraviolet glue on corresponding pillar by transfer printing process；
Ultraviolet lighting solidification is carried out to conductive ultraviolet glue.
Further aspect of the present invention discloses a kind of display device, including micro- LED display panel as described above.
Beneficial effects of the present invention are as follows:
The first electrode layer being electrically connected is realized with external positive and negative electrode for micro- LED in micro- LED display panel of the invention
It is located at the upper and lower two sides of LED with second transparency electrode layer, be formed with the substrate of LED and is provided with the base of LED control circuit
Plate directly can form micro- light-emitting diode display part to box, LED only need to be transferred on substrate by primary transfer technique can be formed it is micro-
LED display panel, to reduce damage possibility of the LED in transfer process, improves micro- LED and shows without repeatedly transfer
The production yield of panel.
Detailed description of the invention
Specific embodiments of the present invention will be described in further detail with reference to the accompanying drawing.
Fig. 1 shows the production process of micro- LED display panel according to an embodiment of the invention.
Fig. 2~Figure 18 shows the corresponding panel sectional view of step in flow chart shown in Fig. 1.
Figure 19~Figure 21 shows the transfer process of micro- LED display panel in accordance with a preferred embodiment of the present invention.
Figure 22 shows the sectional view of micro- LED display panel in accordance with a preferred embodiment of the present invention.
Specific embodiment
In order to illustrate more clearly of the present invention, the present invention is done further below with reference to preferred embodiments and drawings
It is bright.Similar component is indicated in attached drawing with identical appended drawing reference.It will be appreciated by those skilled in the art that institute is specific below
The content of description is illustrative and be not restrictive, and should not be limited the scope of the invention with this.
As shown in Figure 1, an aspect of of the present present invention provides a kind of production method 10 of micro- LED display panel, this method packet
Include following steps:
S100: as shown in Fig. 2, forming first electrode layer 110 on first substrate 108.Wherein first substrate can be
Bright, such as glass, it can be used for the scene of the luminous scene in bottom or transparence display.First electrode layer can be ito thin film.
S110: it is led as shown in figure 3, forming electrically isolated from one multiple cured first in the first electrode layer 110
Electric glue 111 (in figure for 3).
S120: it is still corresponded as shown in figure 3, being formed on cured first conducting resinl electrically isolated from one with it
Multiple micro- LED (310,320,330).
Specifically, the mode of cured first conducting resinl is formed for example shown in Figure 21, by conductive ultraviolet glue by micro- LED
(with 3 examples in figure) is bonded respectively.Ultraviolet lighting solidification is carried out to conductive ultraviolet glue.Make conductive purple by ultraviolet light
Outer adhesive curing is with the micro- LED of fixation.
S130: as shown in figs. 4-18, tft array substrate 100 is formed, is provided with more correspondingly with micro- LED
A TFT, the drain electrode of the TFT are electrically connected with micro- LED.
In a preferable example, as shown in figure 3, forming the first LED310, the 2nd LED320 in first electrode layer 110
With the 3rd LED330, the light of the first LED310, the 2nd LED320 and the 3rd LED330 the first color of outgoing.It is specific at one
In example, it is emitted purple light.In a preferable example, it is emitted blue light.
In being preferably carried out mode, the first LED310, the 2nd LED320 and the 3rd LED330 are generally included successively up and down
The first semiconductor layer 301, luminescent layer 302, the second photoconductor layer 303 and the conductive layer 304 being arranged.Wherein, the first semiconductor layer
301 and conductive layer 304 connect respectively with the voltage input line of control circuit and common wire.
First semiconductor layer 301 can be the N-type of the first impurity of doping, or to adulterate the p-type of the second impurity, accordingly
Ground, the second semiconductor layer 303 can be the p-type of the second impurity of doping, or to adulterate the N-type of the first impurity.For example, first is miscellaneous
Matter is donor impurity, and the second impurity is acceptor impurity, and according to used semiconductor material, the first impurity and the second impurity can be with
For different elements, such as blue light GaN base device, the first impurity can be silicon (Si) element, and the second impurity can be magnesium
(Mg) element.The luminescent layer 302 of LED can be the luminescent layer formed by multi layer quantum well (MQWs), and Quantum Well is as luminescent layer
The luminous efficiency and brightness of LED can be improved, but it is multi layer quantum well that the present invention, which does not limit luminescent layer 302, is also possible to
Single layer quantum well layer, or the luminescent layer of multilayer being alternatively formed by Quantum Well and barrier layer, or the single layer that is formed by quantum dot or
Multilayer luminescent layer can also be the luminescent layer or luminous lamination of intrinsic semiconductor layer or low-doped semiconductor layer type, as long as
Blue light or purple light can be emitted.
In a specific embodiment, a kind of technique of TFT structure is formed as following steps S1301 to S1312 gives.
S1301: as shown in figure 4, forming buffer layer 101 on the second transparent substrate 100.
S1302: as shown in figure 5, forming the first TFT structure, the second TFT structure and third TFT structure on buffer layer 101
Active area (210,220,230).The material of active area can be a silicon, low temperature polycrystalline silicon etc..
S1303: as shown in fig. 6, the first TFT structure, the second TFT structure and third TFT structure active area (210,
220,230) the first insulating layer 102 is formed on.
S1304: as shown in fig. 7, forming the first TFT structure, the second TFT structure and the 3rd TFT on the first insulating layer 102
The gate insulating layer (211,221,231) of structure.
S1305: as shown in figure 8, in the gate insulating layer of the first TFT structure, the second TFT structure and third TFT structure
Grid (212,222,232) are formed on (211,221,231).
S1306: as shown in figure 9, the first TFT structure, the second TFT structure and third TFT structure grid (212,222,
232) second insulating layer 103 is formed on.
S1307: it as shown in Figure 10, is formed in the first insulating layer 102 and second insulating layer 103 and exposes the first TFT knot
The first via hole (213,223,233) of the active area (210,220,230) of structure, the second TFT structure and third TFT structure.
S1308: as shown in figure 11, the source electrode and drain electrode of the first TFT structure, the second TFT structure and third TFT structure
(214,224,234) pass through the first via hole (213,223,233) and the first TFT structure, the second TFT structure and the 3rd TFT respectively
The active area (210,220,230) of structure connects.
S1309: as shown in figure 12, in the first TFT structure, the source electrode and drain electrode of the second TFT structure and third TFT structure
Planarization layer 104 is formed on (214,224,234).
S1311: it as shown in figure 13, is formed and the first TFT structure, the second TFT structure and third on planarization layer 104
The second via hole (215,225,235) of the drain electrode connection of TFT structure.
S1312: it as shown in figure 14, is formed on planarization layer 104 and passes through the second via hole (215,225,235) and first
Electric connection layer that the drain electrode (214,224,234) of TFT structure, the second TFT structure and third TFT structure is respectively communicated with (216,
226,236).
It will be appreciated by those skilled in the art that being one for showing TFT structure of the present invention with top gate structure and being formed above
Specific example.However, this is not intended as limitation of the present invention, TFT structure of the invention may be bottom grating structure.
In a preferable example, as shown in figure 15, tied in first TFT structure, the second TFT structure and the 3rd TFT
Photoluminescent layers 105 are formed on structure, wherein the photoluminescent layers include at least the light excitation being emitted by the first LED310 and send out
It penetrates the second quantum dot region of the light of the second color and excites and emit the light of third color by the light of the 2nd LED320 outgoing
Third quantum dot region.
The light irradiation photoluminescent layers of first color at least form the light of the second color and the light of third color, the second color
Light, third color light and the first color light mixing after be emitted.
The quantum dot in quantum dot region in order to guarantee photoluminescent layers can be formed under the excitation of the light of the first color
The light of second color and the light of third color, the wavelength of the light of the first color need to be shorter than the light and third color of the second color
Light, the i.e. energy of the light of the first color are higher than the light of the second color and the light of third color.
In a specific embodiment, photoluminescent layers are formed as including the light excitation by the first LED310 outgoing and sending out
It penetrates the second quantum dot region of the light of the second color, excite and emit the of the light of third color by the light of the 2nd LED320 outgoing
Three quantum dot regions and the 4th quantum dot region for exciting and emitting the light of the 4th color by the light of the 3rd LED330 outgoing.
For example, the ultraviolet light or black light of LED outgoing, irradiate photoluminescent layers, the second quantum dot of photoluminescent layers
Region is formed by the quanta point material of stimulated emission feux rouges, is formed feux rouges by ultraviolet light or near ultraviolet excitation.Third quantum
Point region is formed by the quanta point material of stimulated emission green light, is formed green light by ultraviolet light or near ultraviolet excitation.4th amount
Son point region is formed by the quanta point material of stimulated emission blue light, is formed blue light by ultraviolet light or near ultraviolet excitation.Due to
Ultraviolet light or black light are invisible, and the feux rouges, green light and blue light of formation is excited to form white light outgoing.
In a preferred embodiment, the first LED310, the 2nd LED320 and the 3rd LED330 are emitted blue light, blue light illumination
Photoluminescent layers, the second quantum dot region of photoluminescent layers form feux rouges under the excitation of blue light, and third quantum dot region exists
Green light is formed under the excitation of blue light, photoluminescent layers include a transparent region to blue light.It is excited the feux rouges to be formed and green light
White light outgoing is formed with the blue light of transmission transparent region.
In this case, the quanta point material region of stimulated emission blue light need not be made in technique again, simple process, and
Save cost.
As shown in figure 16, third via hole (217,227,237) are formed in the photoluminescent layers 105.
S140: as shown in figure 17, second transparency electrode layer, second transparency electrode are formed on the photoluminescent layers 105
Layer is divided into electrically isolated from one with the one-to-one second transparency electrode 106 of the multiple TFT.Second transparency electrode 106
It is electrically connected by third via hole (217,227,237) with the drain electrode of corresponding TFT structure.
S150: as shown in figure 18, setting described first is respectively corresponded in second transparency electrode 106 electrically isolated from one
LED310, the 2nd LED320 and the 3rd LED330, wherein the drain electrode of the first TFT structure is connected to the first LED310 couples by through-hole
The drain electrode of the second transparency electrode 106 answered, the second TFT structure is connected to the corresponding second transparent electricity of the 2nd LED320 by through-hole
The drain electrode of pole 106, third TFT structure is connected to the corresponding second transparency electrode 106 of the 3rd LED330 by through-hole.
That is, by the first substrate structure formed in above-mentioned technique and the second transparent substrate structure " to box ", namely
LED, which only needs to be transferred on the substrate with LED control circuit by primary transfer technique, can form micro- light-emitting diode display part.
In a specific example, realized by conducting resinl 107, as shown in figure 18.The second transparency electrode passes through institute
State cured second electrically conducting transparent glue and corresponding micro- LED connection.
In addition, it will be appreciated by those skilled in the art that the second transparent substrate knot of above-mentioned formation first substrate structure and formation
The execution sequence of both structures can exchange, that is to say, that step S120-S140 can be executed before S100-S110.The present invention
It is without limitation.
Another aspect of the present invention also provides a kind of Micro LED display panel as a result,.In the present embodiment, Micro LED is aobvious
Show that panel includes first substrate 108；Form first electrode layer 110 on the first substrate；It is formed in first electrode layer
Multiple micro- LED (310 electrically isolated from one；320；330)；Cured first conducting resinl 111, micro- LED pass through described solid
The first conducting resinl changed is connected to the first electrode layer；With tft array substrate 100, it is provided with a pair of with micro- LED mono-
The multiple TFT answered, the drain electrode of the TFT are electrically connected with micro- LED.
Technique through the invention and the structure being consequently formed, first electrode layer 110 of the invention and second transparency electrode
106 are separately positioned on the two sides up and down of LED, are directly electrically connected with first electrode layer 110 when LED is transferred to transparent substrate, into one
Step is by realizing being electrically connected for second transparency electrode 106 and LED to box technique, and to form micro- light-emitting diode display part, of the invention is micro-
Light-emitting diode display part only needs that micro- light-emitting diode display part can be formed by primary transfer technique, reduces LED in transfer process
Damage probability, so that the production yield of micro- light-emitting diode display part can be improved.
In a preferred embodiment, S100 is further can include:
S1001: as shown in figure 19, pillar 109 is formed on the first substrate 108.
S1002: it covers the pillar 109 and forms first electrode layer 110.
In a preferred embodiment, S110 and S120 are further can include:
S1101: LED array is formed by silicon-on-insulator process.
As shown in figure 20, multiple LED300 can be formed in LED substrate 400 by silicon-on-insulator (SOI) technique, each
LED300 passes through rope 401 and is vacantly connected in LED substrate 400, wherein sequentially formed on rope 401 substrate 402, absolutely
The first semiconductor layer 301 of edge layer 403 and LED, luminescent layer 302, the second semiconductor layer 303 and conductive layer 304 each layer knot
Structure.Wherein, gap is formed by etching between substrate 402 and LED substrate 400, rope 401 is broken when in order to transfer and removes LED.
S1102: as shown in figure 21, conductive ultraviolet glue 111 is formed in the first electrode layer 110 at 109 top of pillar.
S1103: LED corresponding with 109 position of pillar in LED array is transferred to by corresponding pillar 109 by transfer printing process
On conductive ultraviolet glue 111 on.
When transfer forms the first LED310, the 2nd LED320 and three LED330 as shown in the figure, transparent base can be passed through
Three pillars 109 positioning formed on plate and fixed LED.When transfer, by LED substrate 400 equipped with multiple LED side with it is transparent
It is staggered relatively that substrate sets the side there are three pillar 109, and applied force makes LED substrate in LED substrate 400 or transparent substrate
400 and transparent substrate relative motion, at this point, the barrier effect power of three pillars 109 can be such that rope 401 is broken, by three LED from
It removes in LED substrate 400, and three LED is bonded in respectively on corresponding pillar 109 by conductive ultraviolet glue 111.
S1104: ultraviolet lighting solidification is carried out to conductive ultraviolet glue 111.Make conductive ultraviolet glue 111 by ultraviolet light
Solidification is to fix LED.
LED array is made by SOI technology, and forms convex cylinder, convenient for the LED in LED array is transferred to the
On one substrate 108.
It is thus preferable that the present invention also provides a kind of micro- light-emitting diode display parts as shown in figure 22, the knot compared to Figure 18
Structure further includes the pillar 109 being formed on the transparent substrate, and the first electrode layer covers the pillar；
The conductive ultraviolet glue 111 being formed in the first electrode layer at the top of the pillar, the first LED, the 2nd LED and
3rd LED is respectively formed in corresponding conductive ultraviolet glue.
According to the present invention also on the one hand the present embodiment also discloses a kind of display device, which includes such as this
Micro- LED display panel described in embodiment.Micro- LED display panel can be used to form the backlight of display device.The display device
Can be display panel, the display panel can be applied to TV, digital camera, mobile phone, wrist-watch, tablet computer, laptop,
Any product having a display function such as navigator or component.In another example the LED display of the present embodiment can also be applied
In landscape ornamental, outdoor display screen, advertisement presentation board, mark instruction or illumination etc..
Obviously, the above embodiment of the present invention be only to clearly illustrate example of the present invention, and not be pair
The restriction of embodiments of the present invention may be used also on the basis of the above description for those of ordinary skill in the art
To make other variations or changes in different ways, all embodiments can not be exhaustive here, it is all to belong to this hair
The obvious changes or variations that bright technical solution is extended out are still in the scope of protection of the present invention.
Claims (10)
1. a kind of micro- LED display panel, which is characterized in that including
First substrate；
Form first electrode layer on the first substrate；
The multiple micro- LED electrically isolated from one being formed in first electrode layer；
Cured first conducting resinl, micro- LED are connected to the first electrode layer by cured first conducting resinl；With
Tft array substrate is provided with and micro- LED multiple TFT correspondingly, the drain electrode of the TFT and micro- LED
Electrical connection.
2. micro- LED display panel according to claim 1, which is characterized in that further include being formed on the first substrate
Array arrangement pillar, the first electrode layer covers the pillar；
First conducting resinl is formed in the first electrode layer at the top of the pillar.
3. micro- LED display panel according to claim 1, which is characterized in that the tft array substrate further include:
Second transparency electrode layer, second transparency electrode layer are divided into electrically isolated from one one-to-one with the multiple TFT
Multiple second transparency electrodes, the drain electrode of the TFT are electrically connected with the second transparency electrode；
Cured second electrically conducting transparent glue, the second transparency electrode by the cured second electrically conducting transparent glue with it is corresponding
Micro- LED connection.
4. micro- LED display panel according to any one of claim 1-3, which is characterized in that the tft array substrate is also
Include:
Photoluminescent layers on surface of the second transparency electrode layer far from the second electrically conducting transparent glue, the light are set
Electroluminescent layer includes being excited by blue light and emitting the second quantum dot region of feux rouges, excite and emit the third amount of green light by blue light
Son point region and the fourth region that blue light can be penetrated.
5. micro- LED display panel according to any one of claim 1-3, which is characterized in that the tft array substrate is also
Include:
Photoluminescent layers on surface of the second transparency electrode layer far from the second electrically conducting transparent glue, the light are set
Electroluminescent layer includes the light excitation by the first color and emits the second quantum dot region of the light of the second color, by the first color
Light excites and emits the third quantum dot region of the light of third color and excited by the light of the first color and emit the 4th color
Light the 4th quantum dot region.
6. micro- LED display panel according to claim 5, which is characterized in that the light of first color be ultraviolet light or
Black light, the light of second color are blue light, and the light of the third color is feux rouges, and the light of the 4th color is green
Light.
7. a kind of production method of micro- LED display panel, which is characterized in that including
First electrode layer is formed on the first substrate；
Multiple cured first conducting resinls electrically isolated from one are formed in the first electrode layer；
It is formed on cured first conducting resinl electrically isolated from one and its one-to-one multiple micro- LED；
Form tft array substrate, be provided with micro- LED multiple TFT correspondingly, the drain electrode of the TFT with it is described
Micro- LED electrical connection.
8. the production method of micro- LED display panel according to claim 7, which is characterized in that
On the first substrate formed first electrode layer include on the first substrate formed array arrangement pillar, described first
Electrode layer covers the pillar；
Multiple cured first conducting resinls electrically isolated from one are formed in the first electrode layer to be included at the top of the pillar
First electrode layer on form first conducting resinl.
9. the production method of micro- LED display panel according to claim 7, which is characterized in that described electrically isolated from one
Cured first conducting resinl on formed with its correspondingly multiple micro- LED include
LED array is formed by silicon-on-insulator process；
Conductive ultraviolet glue is formed in the first electrode layer at the top of the pillar；
LED corresponding with pillar position in LED array is transferred in the conductive ultraviolet glue on corresponding pillar by transfer printing process；
Ultraviolet lighting solidification is carried out to conductive ultraviolet glue.
10. a kind of display device, which is characterized in that including micro- LED display panel as claimed in any one of claims 1 to 6.
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109994533A (en) * | 2019-04-17 | 2019-07-09 | 京东方科技集团股份有限公司 | Array substrate, display panel and its manufacturing method |
| CN109991779A (en) * | 2019-04-23 | 2019-07-09 | 京东方科技集团股份有限公司 | Display base plate, display panel and preparation method thereof and display device |
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