CN111338413A - A Low Dropout Linear Regulator with High Power Supply Rejection Ratio - Google Patents
A Low Dropout Linear Regulator with High Power Supply Rejection Ratio Download PDFInfo
- Publication number
- CN111338413A CN111338413A CN202010134110.2A CN202010134110A CN111338413A CN 111338413 A CN111338413 A CN 111338413A CN 202010134110 A CN202010134110 A CN 202010134110A CN 111338413 A CN111338413 A CN 111338413A
- Authority
- CN
- China
- Prior art keywords
- tube
- pmos
- nmos
- transistor
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003990 capacitor Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 abstract description 5
- 230000003321 amplification Effects 0.000 abstract description 2
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is DC
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
Abstract
Description
技术领域technical field
本发明属于电子电路技术领域,涉及一种高电源抑制比的低压差线性稳压器电路。The invention belongs to the technical field of electronic circuits, and relates to a low-dropout linear voltage regulator circuit with high power supply rejection ratio.
背景技术Background technique
如图1所示为传统的低压差线性稳压器电路,通常放置于受电单元前,典型的低压差线性稳压器结构一般由电压基准源VREF、误差放大器EA、功率晶体管MP、反馈网络Rf1和Rf2组成。其工作原理如下:利用负反馈系统对输出电压进行采样,然后与基准电压进行比较,通过环路的调节使输出电压Vout稳定。误差放大器EA用于将采样电压与基准电压进行比较;功率晶体管是负载电流的流经通道,通过负反馈环路控制其导通的强弱,通常使用PMOS管。As shown in Figure 1, the traditional low-dropout linear regulator circuit is usually placed in front of the power receiving unit. The typical low-dropout linear regulator structure generally consists of a voltage reference source VREF, an error amplifier EA, a power transistor MP, and a feedback network. Rf1 and Rf2 are composed. Its working principle is as follows: use the negative feedback system to sample the output voltage, then compare it with the reference voltage, and stabilize the output voltage Vout through the adjustment of the loop. The error amplifier EA is used to compare the sampled voltage with the reference voltage; the power transistor is the channel through which the load current flows, and the strength of its conduction is controlled through a negative feedback loop, usually using a PMOS tube.
然而传统的低压差线性稳压器电路在输出电压Vout升高时,经过电阻分压反馈网络后的反馈电压也会升高,导致误差放大器的输出电压升高,使得低压差线性稳压器电路输出电压不稳定。另外传统的低压差线性稳压器电路中,存在电源上的纹波和噪声通过功率晶体管流入负载和耦合到功率晶体管的栅端,再通过功率晶体管较大的跨导转换成输出端的电流流入负载,这对低压差线性稳压器电路的电源抑制比产生了较大的影响。However, in the traditional low dropout linear regulator circuit, when the output voltage Vout increases, the feedback voltage after passing through the resistor divider feedback network will also increase, resulting in an increase in the output voltage of the error amplifier, making the low dropout linear regulator circuit. The output voltage is unstable. In addition, in the traditional low-dropout linear regulator circuit, there is ripple and noise on the power supply flowing into the load through the power transistor and coupled to the gate terminal of the power transistor, and then converted into the current of the output terminal through the large transconductance of the power transistor and flowing into the load. , which has a large impact on the power supply rejection ratio of the low dropout linear regulator circuit.
发明内容SUMMARY OF THE INVENTION
针对上述传统的低压差线性稳压器存在的输出电压不稳定和电源抑制比受影响较大的不足之处,本发明提出了一种高电源抑制比的低压差线性稳压器电路,通过在误差放大器的输出端与功率晶体管的栅端之间加入缓冲级和辅助模块,实现低压差线性稳压器在环路保持稳定情况下的高电源抑制比。Aiming at the shortcomings of the above-mentioned traditional low-dropout linear voltage regulators, which have unstable output voltage and great influence on the power supply rejection ratio, the present invention proposes a low-dropout linear voltage regulator circuit with high power supply rejection ratio. A buffer stage and an auxiliary module are added between the output terminal of the error amplifier and the gate terminal of the power transistor to achieve a high power supply rejection ratio of the low dropout linear regulator under the condition that the loop remains stable.
本发明的技术方案如下:The technical scheme of the present invention is as follows:
一种高电源抑制比的低压差线性稳压器,包括误差放大器、功率开关管、第一反馈电阻、第二反馈电阻和第一电容,A low dropout linear voltage regulator with high power supply rejection ratio, comprising an error amplifier, a power switch tube, a first feedback resistor, a second feedback resistor and a first capacitor,
误差放大器的反相输入端连接基准电压,其输出端连接功率开关管的控制端;The inverting input end of the error amplifier is connected to the reference voltage, and its output end is connected to the control end of the power switch tube;
功率开关管两端分别连接电源电压和所述低压差线性稳压器的输出端;Both ends of the power switch tube are respectively connected to the power supply voltage and the output end of the low-dropout linear regulator;
第一反馈电阻和第二反馈电阻串联并连接在所述低压差线性稳压器的输出端和地之间,其串联点连接误差放大器的同相输入端;The first feedback resistor and the second feedback resistor are connected in series and between the output end of the low dropout linear regulator and the ground, and the series point is connected to the non-inverting input end of the error amplifier;
第一电容连接在所述低压差线性稳压器的输出端和地之间;the first capacitor is connected between the output end of the low dropout linear regulator and the ground;
所述低压差线性稳压器还包括辅助模块和缓冲级,The low dropout linear regulator further includes an auxiliary module and a buffer stage,
所述辅助模块包括第一直流电流源、第一开关管、第二开关管、第一电阻、第二电阻、第三电阻和第一运算放大器,其中第一开关管为所述功率开关管按比例缩小复制获得;The auxiliary module includes a first DC current source, a first switch tube, a second switch tube, a first resistor, a second resistor, a third resistor and a first operational amplifier, wherein the first switch tube is the power switch tube press button. Scale down and copy to obtain;
第一开关管流过第一直流电流源的电流,并与第二开关管组成电流镜结构,第二开关管镜像的电流在第一电阻上产生压降获得辅助电压信号;The first switch tube flows through the current of the first DC current source, and forms a current mirror structure with the second switch tube, and the mirrored current of the second switch tube generates a voltage drop on the first resistor to obtain an auxiliary voltage signal;
第一运算放大器的反相输入端连接所述辅助电压信号,其同相输入端连接第二电阻的一端和第三电阻的一端,其输出端作为所述辅助模块的输出端并连接第三电阻的另一端;第二电阻的另一端接地;The inverting input terminal of the first operational amplifier is connected to the auxiliary voltage signal, its non-inverting input terminal is connected to one end of the second resistor and one end of the third resistor, and its output terminal is used as the output terminal of the auxiliary module and is connected to the third resistor. The other end; the other end of the second resistor is grounded;
所述缓冲级包括第四电阻、第二运算放大器、第二直流电流源、第三直流电流源、第九PMOS管、第五NMOS管和第六NMOS管,The buffer stage includes a fourth resistor, a second operational amplifier, a second DC current source, a third DC current source, a ninth PMOS transistor, a fifth NMOS transistor and a sixth NMOS transistor,
第四电阻的一端连接所述辅助模块的输出端,另一端连接第二运算放大的反相输入端;One end of the fourth resistor is connected to the output end of the auxiliary module, and the other end is connected to the inverting input end of the second operational amplifier;
第九PMOS管的栅极连接第二运算放大器的同相输入端和输出端,其源极连接第二直流电流源,其漏极连接第五NMOS管的栅极和漏极以及第六NMOS管的栅极;The gate of the ninth PMOS tube is connected to the non-inverting input terminal and the output terminal of the second operational amplifier, its source is connected to the second DC current source, and its drain is connected to the gate and drain of the fifth NMOS tube and the sixth NMOS tube. grid;
第六NMOS管的源极连接第五NMOS管的源极并接地,其漏极作为所述缓冲级的输出端并连接第二直流电流源;The source of the sixth NMOS transistor is connected to the source of the fifth NMOS transistor and grounded, and its drain serves as the output end of the buffer stage and is connected to the second DC current source;
所述缓冲级的输出端连接所述功率开关管的控制端。The output end of the buffer stage is connected to the control end of the power switch tube.
具体的,所述功率开关管为PMOS功率管,PMOS功率管的栅极作为所述功率开关管的控制端连接误差放大器的输出端和所述缓冲级的输出端,其源极连接电源电压,其漏极连接所述低压差线性稳压器的输出端。Specifically, the power switch tube is a PMOS power tube, the gate of the PMOS power tube is used as the control end of the power switch tube to connect the output end of the error amplifier and the output end of the buffer stage, and its source is connected to the power supply voltage, Its drain is connected to the output terminal of the low dropout linear regulator.
具体的,所述第一开关管为第七PMOS管,第二开关管为第八PMOS管,第七PMOS管的栅漏短接并连接第八PMOS管的栅极和第一直流电流源,其源极连接第八PMOS管的源极并连接电源电压;第一电阻一端接地,另一端连接第八PMOS管的漏极并输出所述辅助电压信号。Specifically, the first switch tube is a seventh PMOS tube, the second switch tube is an eighth PMOS tube, and the gate-drain of the seventh PMOS tube is short-circuited and connected to the gate of the eighth PMOS tube and the first DC current source, Its source is connected to the source of the eighth PMOS transistor and is connected to the power supply voltage; one end of the first resistor is grounded, and the other end is connected to the drain of the eighth PMOS transistor and outputs the auxiliary voltage signal.
具体的,所述功率开关管为NMOS功率管,NMOS功率管的栅极作为所述功率开关管的控制端连接误差放大器的输出端和所述缓冲级的输出端,其漏极连接电源电压,其源极连接所述低压差线性稳压器的输出端。Specifically, the power switch tube is an NMOS power tube, and the gate of the NMOS power tube is used as the control end of the power switch tube to connect the output end of the error amplifier and the output end of the buffer stage, and its drain is connected to the power supply voltage, Its source is connected to the output end of the low dropout linear regulator.
具体的,所述第一开关管为第七NMOS管,第二开关管为第八NMOS管,第七NMOS管的栅漏短接并连接第八NMOS管的栅极和第一直流电流源,其源极连接第八NMOS管的源极并接地;第一电阻一端连接电源电压,另一端连接第八NMOS管的漏极并输出所述辅助电压信号。Specifically, the first switch tube is a seventh NMOS tube, the second switch tube is an eighth NMOS tube, and the gate-drain of the seventh NMOS tube is short-circuited and connected to the gate of the eighth NMOS tube and the first DC current source, Its source is connected to the source of the eighth NMOS transistor and grounded; one end of the first resistor is connected to the power supply voltage, and the other end is connected to the drain of the eighth NMOS transistor and outputs the auxiliary voltage signal.
具体的,所述误差放大器包括第一NMOS管、第二NMOS管、第三NMOS管、第四NMOS管、第一PMOS管、第二PMOS管、第三PMOS管、第四PMOS管、第五PMOS管、第六PMOS管和第四直流电流源,Specifically, the error amplifier includes a first NMOS transistor, a second NMOS transistor, a third NMOS transistor, a fourth NMOS transistor, a first PMOS transistor, a second PMOS transistor, a third PMOS transistor, a fourth PMOS transistor, a fifth PMOS tube, sixth PMOS tube and fourth DC current source,
第三PMOS管的栅极作为所述误差放大器的反相输入端,其源极连接第四PMOS管的源极和第二PMOS管的漏极,其漏极连接第一NMOS管的栅极和漏极以及第二NMOS管的栅极和第四NMOS管的栅极;The gate of the third PMOS transistor is used as the inverting input terminal of the error amplifier, its source is connected to the source of the fourth PMOS transistor and the drain of the second PMOS transistor, and its drain is connected to the gate of the first NMOS transistor and the drain of the second PMOS transistor. the drain, the gate of the second NMOS transistor and the gate of the fourth NMOS transistor;
第四PMOS管的栅极作为所述误差放大器的同相输入端,其漏极连接第二NMOS管的漏极和第三NMOS管的栅极;The gate of the fourth PMOS transistor is used as the non-inverting input terminal of the error amplifier, and its drain is connected to the drain of the second NMOS transistor and the gate of the third NMOS transistor;
第一PMOS管的栅漏短接并连接第二PMOS管的栅极和第四直流电流源,其源极连接第二PMOS管、第五PMOS管和第六PMOS管的源极并连接电源电压;The gate-drain of the first PMOS tube is short-circuited and connected to the gate of the second PMOS tube and the fourth DC current source, and its source is connected to the sources of the second PMOS tube, the fifth PMOS tube and the sixth PMOS tube and is connected to the power supply voltage ;
第六PMOS管的栅极连接第三NMOS管的漏极以及第五PMOS管的栅极和漏极,其漏极连接第四NMOS管的漏极并作为所述误差放大器的输出端;The gate of the sixth PMOS tube is connected to the drain of the third NMOS tube and the gate and drain of the fifth PMOS tube, and the drain of the sixth PMOS tube is connected to the drain of the fourth NMOS tube and serves as the output end of the error amplifier;
第一NMOS管、第二NMOS管和第四NMOS管的源极接地。The sources of the first NMOS transistor, the second NMOS transistor and the fourth NMOS transistor are grounded.
本发明的有益效果为:本发明在低压差线性稳压器中引入缓冲级和辅助模块,能够实现当输入电源电压高于设置电压时,输出电源电压恒定为设置输出电压,稳定输出电压,并且输出电源电压受温度变化、工艺偏差的影响较小,同时能够给受电单元提供更加干净且电源纹波较小的电源电压。The beneficial effects of the present invention are as follows: the present invention introduces a buffer stage and an auxiliary module into the low-dropout linear regulator, which can realize that when the input power supply voltage is higher than the set voltage, the output power supply voltage is constant to the set output voltage, the output voltage is stabilized, and The output power voltage is less affected by temperature changes and process deviations, and at the same time, it can provide a cleaner power supply voltage with less power ripple to the power receiving unit.
附图说明Description of drawings
图1为传统低压差线性稳压器的电路结构示意图。FIG. 1 is a schematic diagram of the circuit structure of a conventional low-dropout linear regulator.
图2为本发明提供的一种高电源抑制比的低压差线性稳压器在功率管开关管为PMOS功率管时的实现框图。FIG. 2 is a block diagram of the realization of a low dropout linear voltage regulator with a high power supply rejection ratio provided by the present invention when the power transistor switching transistor is a PMOS power transistor.
图3为本发明提供的一种高电源抑制比的低压差线性稳压器中误差放大器的一种电路实现结构图。FIG. 3 is a structural diagram of a circuit implementation of an error amplifier in a low dropout linear voltage regulator with a high power supply rejection ratio provided by the present invention.
图4为本发明提供的一种高电源抑制比的低压差线性稳压器在功率管开关管为PMOS功率管时辅助模块和缓冲级的一种实现电路结构示意图。4 is a schematic structural diagram of a realization circuit of an auxiliary module and a buffer stage of a low dropout linear regulator with a high power supply rejection ratio provided by the present invention when the power transistor switch is a PMOS power transistor.
图5为本发明提供的一种高电源抑制比的低压差线性稳压器在功率管开关管为NMOS功率管时的实现框图。FIG. 5 is a block diagram of the implementation of a low dropout linear voltage regulator with a high power supply rejection ratio provided by the present invention when the power transistor switching transistors are NMOS power transistors.
图6为本发明提供的一种高电源抑制比的低压差线性稳压器在功率管开关管为NMOS功率管时辅助模块和缓冲级的一种实现电路结构示意图。6 is a schematic structural diagram of a realization circuit of an auxiliary module and a buffer stage of a low dropout linear voltage regulator with a high power supply rejection ratio provided by the present invention when the power tube switch tube is an NMOS power tube.
具体实施方式Detailed ways
下面结合附图和实施例,详述本发明的技术方案。The technical solutions of the present invention will be described in detail below with reference to the accompanying drawings and embodiments.
本发明提出一种高电源抑制比的低压差线性稳压器,包括误差放大器、功率开关管、第一反馈电阻R6、第二反馈电阻R7和第一电容CL,误差放大器的反相输入端连接基准电压VREF,其输出端连接功率开关管的控制端;功率开关管两端分别连接电源电压VDD和低压差线性稳压器的输出端;第一反馈电阻R6和第二反馈电阻R7构成反馈网络串联并连接在低压差线性稳压器的输出端和地之间,其串联点连接误差放大器的同相输入端;第一电容CL连接在低压差线性稳压器的输出端和地之间。The present invention proposes a low dropout linear voltage regulator with high power supply rejection ratio, which includes an error amplifier, a power switch tube, a first feedback resistor R 6 , a second feedback resistor R 7 and a first capacitor CL . The input terminal is connected to the reference voltage V REF , and the output terminal is connected to the control terminal of the power switch tube; the two ends of the power switch tube are respectively connected to the power supply voltage V DD and the output terminal of the low - dropout linear regulator; The feedback resistor R7 forms a feedback network in series and is connected between the output end of the low dropout linear regulator and the ground, and its series point is connected to the non-inverting input end of the error amplifier; the first capacitor CL is connected to the low dropout linear regulator. between the output and ground.
其中功率开关管一般选择PMOS管,如图2所示,功率开关管为PMOS功率管MP,PMOS功率管MP的栅极作为功率开关管的控制端连接误差放大器的输出端和缓冲级的输出端,其源极连接电源电压VDD,其漏极连接低压差线性稳压器的输出端。Among them, the power switch tube generally chooses a PMOS tube. As shown in Figure 2, the power switch tube is a PMOS power tube MP, and the gate of the PMOS power tube MP is used as the control end of the power switch tube to connect the output end of the error amplifier and the buffer stage. The output terminal, its source is connected to the power supply voltage V DD , and its drain is connected to the output terminal of the low-dropout linear regulator.
一些情况下,功率开关管也可以选择NMOS管,如图5所示,功率开关管为NMOS功率管MN,NMOS功率管MN的栅极作为功率开关管的控制端连接误差放大器的输出端和缓冲级的输出端,其漏极连接电源电压VDD,其源极连接低压差线性稳压器的输出端。In some cases, the power switch tube can also be an NMOS tube. As shown in FIG. 5 , the power switch tube is an NMOS power tube MN , and the gate of the NMOS power tube MN is used as the control end of the power switch tube and is connected to the output end of the error amplifier. and the output of the buffer stage, the drain of which is connected to the supply voltage V DD and the source of which is connected to the output of the low dropout linear regulator.
本发明提出的低压差线性稳压器的工作原理是:在输入电源Vin即电源电压VDD上电后,利用负反馈系统对低压差线性稳压器的输出电压Vout进行采样,然后与参考电压即基准电压VREF进行比较,通过环路的调节使输出电压Vout稳定。误差放大器用于将采样电压与基准电压VREF进行比较;功率开关管(以PMOS功率管MP为例进行说明)是负载电流的流经通道,通过负反馈环路控制其导通的强弱。The working principle of the low-dropout linear regulator proposed by the present invention is as follows: after the input power supply Vin, that is, the power supply voltage V DD , is powered on, the output voltage Vout of the low-dropout linear regulator is sampled by the negative feedback system, and then compared with the reference voltage. That is, the reference voltage V REF is compared, and the output voltage Vout is stabilized through the adjustment of the loop. The error amplifier is used to compare the sampled voltage with the reference voltage V REF ; the power switch tube (take the PMOS power tube MP as an example) is the channel through which the load current flows, and the strength of its conduction is controlled through a negative feedback loop .
当输出电压Vout升高时,经过电阻分压反馈网络后的反馈电压VFB也会升高,误差放大器的输出电压升高,造成低压差线性稳压器输出不稳定。而本发明设置了缓冲级,缓冲级为同相缓冲器,因此PMOS功率管MP的栅极电压升高,从而减小流过PMOS功率管MP的负载电流,使得输出电压Vout下降,从而抵消输出电压Vout升高的变化。同理,当输出电压Vout下降时,经过环路控制后会使得流过PMOS功率管MP的负载电流增大,从而使输出电压Vout升高,最终输出电压Vout得以稳定。实际情况中PMOS功率管MP的输出阻抗不是无穷大,所以会有电源上的纹波和噪声通过PMOS功率管MP的输出阻抗rds和漏极与衬底之间的电容Cdb流入负载,以及通过PMOS功率管MP的栅源电容Cgs耦合到功率管的栅端,再通过功率管较大的跨导转换成输出端的电流流入负载,以上两点将较大的影响低压差线性稳压器电路的电源抑制比,因此本发明提出了辅助模块结合缓冲级用于改善低压差线性稳压器电路的电源抑制比。When the output voltage Vout increases, the feedback voltage VFB after passing through the resistor divider feedback network will also increase, and the output voltage of the error amplifier will increase, causing the output of the low dropout linear regulator to be unstable. In the present invention, a buffer stage is provided, and the buffer stage is a non-inverting buffer, so the gate voltage of the PMOS power transistor MP increases, thereby reducing the load current flowing through the PMOS power transistor MP, so that the output voltage Vout decreases, thereby offsetting Variation in the rise of the output voltage Vout. Similarly, when the output voltage Vout decreases, the load current flowing through the PMOS power transistor MP increases after loop control, thereby increasing the output voltage Vout, and finally the output voltage Vout is stabilized. In practice, the output impedance of the PMOS power transistor MP is not infinite, so there will be ripple and noise on the power supply flowing into the load through the output impedance r ds of the PMOS power transistor MP and the capacitance C db between the drain and the substrate, And the gate-source capacitance C gs of the PMOS power tube MP is coupled to the gate terminal of the power tube, and then converted into the current of the output terminal through the large transconductance of the power tube, which flows into the load. The above two points will greatly affect the low-voltage dropout. Linear stability Therefore, the present invention proposes an auxiliary module combined with a buffer stage to improve the power supply rejection ratio of the low-dropout linear voltage regulator circuit.
其中辅助模块包括第一直流电流源I0、第一开关管、第二开关管、第一电阻R2、第二电阻R3、第三电阻R4和第一运算放大器OP1,其中第一开关管为功率开关管按比例缩小复制获得;第一开关管流过第一直流电流源I0的电流,并与第二开关管组成电流镜结构,第二开关管镜像的电流在第一电阻R2上产生压降获得辅助电压信号;第一运算放大器OP1的反相输入端连接辅助电压信号,其同相输入端连接第二电阻R3的一端和第三电阻R4的一端,其输出端作为辅助模块的输出端并连接第三电阻R4的另一端;第二电阻R3的另一端接地。The auxiliary module includes a first DC current source I0, a first switch tube, a second switch tube, a first resistor R2, a second resistor R3, a third resistor R4 and a first operational amplifier OP1, wherein the first switch tube is a power switch The tube is scaled down and copied; the first switch tube flows through the current of the first DC current source I0, and forms a current mirror structure with the second switch tube, and the mirrored current of the second switch tube produces a voltage drop on the first resistor R2 to obtain Auxiliary voltage signal; the inverting input end of the first operational amplifier OP1 is connected to the auxiliary voltage signal, its non-inverting input end is connected to one end of the second resistor R3 and one end of the third resistor R4, and its output end is used as the output end of the auxiliary module and is connected to the first The other end of the three resistors R4; the other end of the second resistor R3 is grounded.
第一开关管和第二开关管组成电流镜结构,且第一开关管是由功率开关管按比例缩小复制获得,因此当功率开关管为PMOS管时,第一开关管和第二开关管也为PMOS管,如图4所示,第一开关管为第七PMOS管MP6,第二开关管为第八PMOS管MP7,第七PMOS管MP6的栅漏短接并连接第八PMOS管MP7的栅极和第一直流电流源I0,其源极连接第八PMOS管MP7的源极并连接电源电压VDD;第一电阻R2一端接地,另一端连接第八PMOS管MP7的漏极并输出辅助电压信号。The first switch tube and the second switch tube form a current mirror structure, and the first switch tube is obtained by scaling down the power switch tube, so when the power switch tube is a PMOS tube, the first switch tube and the second switch tube are also It is a PMOS tube, as shown in FIG. 4 , the first switch tube is the seventh PMOS tube MP6, the second switch tube is the eighth PMOS tube MP7, and the gate-drain of the seventh PMOS tube MP6 is short-circuited and connected to the eighth PMOS tube MP7. The gate and the first DC current source I0, the source of which is connected to the source of the eighth PMOS transistor MP7 and the power supply voltage VDD; one end of the first resistor R2 is grounded, and the other end is connected to the drain of the eighth PMOS transistor MP7 and outputs an auxiliary voltage Signal.
因此当功率开关管为NMOS管时,第一开关管和第二开关管也为NMOS管,如图6所示,第一开关管为第七NMOS管MN6,第二开关管为第八NMOS管MP7,第七NMOS管MN6的栅漏短接并连接第八NMOS管MP7的栅极和第一直流电流源I0,其源极连接第八NMOS管MP7的源极并接地;第一电阻R2一端连接电源电压VDD,另一端连接第八NMOS管MP7的漏极并输出辅助电压信号。Therefore, when the power switch tube is an NMOS tube, the first switch tube and the second switch tube are also NMOS tubes. As shown in FIG. 6 , the first switch tube is the seventh NMOS tube MN6, and the second switch tube is the eighth NMOS tube. MP7, the gate-drain of the seventh NMOS transistor MN6 is short-circuited and connected to the gate of the eighth NMOS transistor MP7 and the first DC current source I0, and its source is connected to the source of the eighth NMOS transistor MP7 and grounded; one end of the first resistor R2 The power supply voltage VDD is connected, and the other end is connected to the drain of the eighth NMOS transistor MP7 and outputs an auxiliary voltage signal.
如图4和图6所示,缓冲级包括第四电阻R5、第二运算放大器OP2、第二直流电流源I1、第三直流电流源I2、第九PMOS管、第五NMOS管MN4和第六NMOS管MN5,第四电阻R5的一端连接辅助模块的输出端,另一端连接第二运算放大器OP2的反相输入端;第九PMOS管的栅极连接第二运算放大器OP2的同相输入端和输出端,其源极连接第二直流电流源I1,其漏极连接第五NMOS管MN4的栅极和漏极以及第六NMOS管MN5的栅极;第六NMOS管MN5的源极连接第五NMOS管MN4的源极并接地,其漏极作为缓冲级的输出端并连接第二直流电流源I1;缓冲级的输出端连接功率开关管的控制端。As shown in FIG. 4 and FIG. 6 , the buffer stage includes a fourth resistor R5, a second operational amplifier OP2, a second DC current source I1, a third DC current source I2, a ninth PMOS transistor, a fifth NMOS transistor MN4 and a sixth NMOS transistor MN5, one end of the fourth resistor R5 is connected to the output end of the auxiliary module, and the other end is connected to the inverting input end of the second operational amplifier OP2; the gate of the ninth PMOS transistor is connected to the non-inverting input end and output of the second operational amplifier OP2 terminal, its source is connected to the second DC current source I1, its drain is connected to the gate and drain of the fifth NMOS transistor MN4 and the gate of the sixth NMOS transistor MN5; the source of the sixth NMOS transistor MN5 is connected to the fifth NMOS The source of the tube MN4 is grounded, and its drain serves as the output end of the buffer stage and is connected to the second DC current source I1; the output end of the buffer stage is connected to the control end of the power switch tube.
在中低频的条件下,提高低压差线性稳压器电路的环路增益,可以有效提高电源抑制比。但在高频条件下,由于没有大的片外电容对电源噪声进行滤除,因此需要设计辅助电路来增强电源抑制比PSR在高频下的表现。影响高频下电源抑制比的主要因素在于从电源到输出的小信号路径和由于功率开关管有限的输出阻抗而产生的分压。本发明设计了一个通路,经过一个缓冲器将信号注入到功率开关管的栅端来进行补偿,使得功率管栅极电压不随电源纹波的变化而变化,即在AC条件下,功率管栅极电压为0,从而保证其达到抑制电源纹波的作用。Under the condition of medium and low frequency, increasing the loop gain of the low dropout linear regulator circuit can effectively improve the power supply rejection ratio. However, under high frequency conditions, since there is no large off-chip capacitor to filter the power supply noise, it is necessary to design an auxiliary circuit to enhance the performance of the power supply rejection ratio PSR at high frequencies. The main factors that affect the power supply rejection ratio at high frequencies are the small signal path from the power supply to the output and the voltage divider due to the limited output impedance of the power switch. The invention designs a path, and injects the signal into the gate terminal of the power switch tube through a buffer for compensation, so that the gate voltage of the power tube does not change with the change of the power supply ripple, that is, under AC conditions, the gate of the power tube will not change. The voltage is 0, so as to ensure that it can suppress the power supply ripple.
以功率开关管为PMOS功率管MP为例进行说明,具体实现方式为在缓冲级和辅助模块中,设计一个和PMOS功率管MP按比例缩小复制的第七PMOS管MP6,流经第七PMOS管MP6受电源纹波影响而产生的的漏极电流为Taking the power switch tube as the PMOS power tube MP as an example, the specific implementation method is to design a seventh PMOS tube MP6 that is scaled down and copied with the PMOS power tube MP in the buffer stage and the auxiliary module, and flows through the seventh PMOS tube MP6. The drain current of the PMOS transistor MP6 affected by the power supply ripple is:
其中,id_mp6是第七PMOS管MP6受电源纹波影响而产生的漏极电流,Cgdr是第七PMOS管MP6的栅漏电容,Cgsr是第七PMOS管MP6的栅源电容,gmp6是第七PMOS管MP6的跨导,rdsmp6是第七PMOS管MP6的输出电阻。Wherein, id_mp6 is the drain current of the seventh PMOS transistor MP6 affected by the power supply ripple, C gdr is the gate-drain capacitance of the seventh PMOS transistor MP6, C gsr is the gate-source capacitance of the seventh PMOS transistor MP6, g mp6 is the transconductance of the seventh PMOS transistor MP6, and r dsmp6 is the output resistance of the seventh PMOS transistor MP6.
由于上式中第二项远小于第一项,所以可以认为 Since the second term in the above formula is much smaller than the first term, it can be considered that
id_mp6这个电流信号可以有效跟踪电源纹波的变化,这个电流通过由第七PMOS管MP6和第八PMOS管MP7构成的电流镜后大小仍然为sCgdrVdd,并在第一电阻R2上产生一个大小为sCgdrVddR2的压降,通过由第一运算放大器OP1、第二电阻R3和第三电阻R4组成的按比例放大电路,放大后得到的电压为sCgdrVddR2*(1+R4/R3),放大后得到的这个信号经过由第二运算放大器OP2构成的电压跟随器得到的值仍然为sCgdrVddR2*(1+R4/R3),信号再经过第九PMOS管MP8的跨导转换成电流信号sCgdrVddR2*(1+R4/R3)*gmp8,通过适当设计第一电阻R2、第二电阻R3和第三电阻R4之间的比例关系和第九PMOS管MP8,可以得到The current signal id_mp6 can effectively track the change of the power supply ripple. After the current passes through the current mirror formed by the seventh PMOS transistor MP6 and the eighth PMOS transistor MP7, the size is still sC gdr V dd , and is generated on the first resistor R2 A voltage drop with a size of sC gdr V dd R2, through the proportional amplification circuit composed of the first operational amplifier OP1, the second resistor R3 and the third resistor R4, the amplified voltage is sC gdr V dd R2*(1 +R4/R3), the value obtained by the amplified signal through the voltage follower formed by the second operational amplifier OP2 is still sC gdr V dd R2*(1+R4/R3), and the signal passes through the ninth PMOS tube The transconductance of MP8 is converted into a current signal sC gdr V dd R2*(1+R4/R3)*g mp8 , by appropriately designing the proportional relationship between the first resistor R2, the second resistor R3 and the third resistor R4 and the ninth PMOS tube MP8, you can get
其中Cgd是PMO S功率管MP的栅漏电容,gmp8是第九PMOS管MP8的跨导。C gd is the gate-drain capacitance of the PMOS power transistor MP, and g mp8 is the transconductance of the ninth PMOS transistor MP8.
sCgdVdd信号再通过由第五NMOS管MN4和第六NMOS管MN5构成的电流镜达到缓冲级的输出端,并从缓冲级的输出端注入到PMOS功率管MP的栅极,用以抵消从电源到输出的小信号路径和由于功率开关管有限的输出阻抗而产生的分压,从而实现提高电源抑制比的功能。The sC gd V dd signal reaches the output end of the buffer stage through the current mirror formed by the fifth NMOS transistor MN4 and the sixth NMOS transistor MN5, and is injected from the output end of the buffer stage to the gate of the PMOS power transistor MP for Can offset the small signal path from the power supply to the output and the voltage divider due to the limited output impedance of the power switch tube, so as to achieve the function of improving the power supply rejection ratio.
如图3所示给出了误差放大器的一种实现结构,另外也可以使用其他输入共模电压合适的电压放大器,本实施例中误差放大器包括第一NMOS管MN0、第二NMOS管MN1、第三NMOS管MN2、第四NMOS管MN3、第一PMOS管MP0、第二PMOS管MP1、第三PMOS管、第四PMOS管MP3、第五PMOS管MP4、第六PMOS管MP5和第四直流电流源,第三PMOS管的栅极作为误差放大器的反相输入端,其源极连接第四PMOS管MP3的源极和第二PMOS管MP1的漏极,其漏极连接第一NMOS管MN0的栅极和漏极以及第二NMOS管MN1的栅极和第四NMOS管MN3的栅极;第四PMOS管MP3的栅极作为误差放大器的同相输入端,其漏极连接第二NMOS管MN1的漏极和第三NMOS管MN2的栅极;第一PMOS管MP0的栅漏短接并连接第二PMOS管MP1的栅极和第四直流电流源,其源极连接第二PMOS管MP1、第五PMOS管MP4和第六PMOS管MP5的源极并连接电源电压VDD;第六PMOS管MP5的栅极连接第三NMOS管MN2的漏极以及第五PMOS管MP4的栅极和漏极,其漏极连接第四NMOS管MN3的漏极并作为误差放大器的输出端;第一NMOS管MN0、第二NMOS管MN1和第四NMOS管MN3的源极接地。As shown in FIG. 3, an implementation structure of the error amplifier is given. In addition, other voltage amplifiers with suitable input common-mode voltage can also be used. In this embodiment, the error amplifier includes a first NMOS transistor MN0, a second NMOS transistor MN1, a Three NMOS transistors MN2, fourth NMOS transistor MN3, first PMOS transistor MP0, second PMOS transistor MP1, third PMOS transistor, fourth PMOS transistor MP3, fifth PMOS transistor MP4, sixth PMOS transistor MP5 and fourth DC current Source, the gate of the third PMOS transistor is used as the inverting input terminal of the error amplifier, its source is connected to the source of the fourth PMOS transistor MP3 and the drain of the second PMOS transistor MP1, and its drain is connected to the first NMOS transistor MN0. The gate and drain, the gate of the second NMOS transistor MN1 and the gate of the fourth NMOS transistor MN3; the gate of the fourth PMOS transistor MP3 is used as the non-inverting input terminal of the error amplifier, and its drain is connected to the second NMOS transistor MN1. The drain and the gate of the third NMOS transistor MN2; the gate-drain of the first PMOS transistor MP0 is short-circuited and connected to the gate of the second PMOS transistor MP1 and the fourth DC current source, and its source is connected to the second PMOS transistor MP1, the first The sources of the five PMOS transistors MP4 and the sixth PMOS transistor MP5 are connected to the power supply voltage VDD; the gate of the sixth PMOS transistor MP5 is connected to the drain of the third NMOS transistor MN2 and the gate and drain of the fifth PMOS transistor MP4. The drain is connected to the drain of the fourth NMOS transistor MN3 and serves as the output terminal of the error amplifier; the sources of the first NMOS transistor MN0, the second NMOS transistor MN1 and the fourth NMOS transistor MN3 are grounded.
综上所述,本发明通过设置缓冲级和辅助模块,在功率开关管栅极电压变化升高或降低时,减小或增大流过功率开关管的负载电流,使得低压差线性稳压器的输出电压下降或升高,从而抵消输出电压的变化,输出电源电压受温度变化、工艺偏差的影响较小,实现稳定输出电压;另外通过缓冲级将信号注入到功率开关管的栅端来进行补偿,使得功率开关管栅极电压不随电源纹波的变化而变化,实现抑制电源纹波的作用,提高了电源抑制比。In summary, the present invention reduces or increases the load current flowing through the power switch tube when the gate voltage of the power switch tube increases or decreases by setting the buffer stage and the auxiliary module, so that the low dropout linear regulator can be achieved. The output voltage drops or rises, so as to offset the change of the output voltage. The output power supply voltage is less affected by temperature changes and process deviations, and a stable output voltage is achieved; in addition, the signal is injected into the gate terminal of the power switch tube through the buffer stage. Compensation, so that the gate voltage of the power switch tube does not change with the change of the power supply ripple, realizes the function of suppressing the power supply ripple, and improves the power supply suppression ratio.
本领域的普通技术人员可以根据本发明公开的这些技术启示做出各种不脱离本发明实质的其它各种具体变形和组合,这些变形和组合仍然在本发明的保护范围内。Those skilled in the art can make various other specific modifications and combinations without departing from the essence of the present invention according to the technical teaching disclosed in the present invention, and these modifications and combinations still fall within the protection scope of the present invention.
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010134110.2A CN111338413B (en) | 2020-03-02 | 2020-03-02 | A Low Dropout Linear Regulator with High Power Supply Rejection Ratio |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010134110.2A CN111338413B (en) | 2020-03-02 | 2020-03-02 | A Low Dropout Linear Regulator with High Power Supply Rejection Ratio |
Publications (2)
Publication Number | Publication Date |
---|---|
CN111338413A true CN111338413A (en) | 2020-06-26 |
CN111338413B CN111338413B (en) | 2021-05-14 |
Family
ID=71179738
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202010134110.2A Active CN111338413B (en) | 2020-03-02 | 2020-03-02 | A Low Dropout Linear Regulator with High Power Supply Rejection Ratio |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN111338413B (en) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111711251A (en) * | 2020-07-23 | 2020-09-25 | 深圳市芯艺微电子有限公司 | Power management chip and application circuit and electronic equipment thereof |
CN113064460A (en) * | 2021-03-24 | 2021-07-02 | 成都瓴科微电子有限责任公司 | Low dropout regulator circuit with high power supply rejection ratio |
CN113325912A (en) * | 2021-06-10 | 2021-08-31 | 深圳市微源半导体股份有限公司 | LDO circuit suitable for wide input voltage range |
CN113721695A (en) * | 2021-08-20 | 2021-11-30 | 西安电子科技大学 | Dual-mode low dropout regulator, circuit thereof and electronic product |
CN114200994A (en) * | 2021-12-07 | 2022-03-18 | 深圳市灵明光子科技有限公司 | Low dropout linear regulator and laser ranging circuit |
CN114706441A (en) * | 2022-04-07 | 2022-07-05 | 南京市智凌芯科技股份有限公司 | Low-power-consumption low-dropout linear voltage regulator |
US11467614B2 (en) * | 2020-09-10 | 2022-10-11 | Apple Inc. | Voltage mode low-dropout regulator circuit with reduced quiescent current |
CN115993867A (en) * | 2023-03-03 | 2023-04-21 | 重庆大学 | Low-power-consumption high-voltage linear voltage stabilizer capable of adjusting output voltage and voltage stabilizing method thereof |
CN116048170A (en) * | 2022-12-30 | 2023-05-02 | 上海联影微电子科技有限公司 | Enhancement circuit and voltage stabilizer |
CN117277514A (en) * | 2023-11-17 | 2023-12-22 | 苏州贝克微电子股份有限公司 | Power supply circuit capable of reducing output voltage fluctuation |
CN119002615A (en) * | 2024-10-25 | 2024-11-22 | 成都市易冲半导体有限公司 | Low-dropout voltage regulator and electronic equipment |
CN119276119A (en) * | 2024-12-09 | 2025-01-07 | 上海紫鹰微电子有限公司 | A high voltage to low voltage circuit and power management unit |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030111986A1 (en) * | 2001-12-19 | 2003-06-19 | Xiaoyu (Frank) Xi | Miller compensated nmos low drop-out voltage regulator using variable gain stage |
CN104750148A (en) * | 2013-12-31 | 2015-07-01 | 北京兆易创新科技股份有限公司 | Low-dropout regulator |
CN108345341A (en) * | 2017-12-27 | 2018-07-31 | 思瑞浦微电子科技(苏州)股份有限公司 | A kind of linear voltage regulator that adaptive enhancing power supply inhibits |
CN109683651A (en) * | 2019-03-05 | 2019-04-26 | 电子科技大学 | A kind of low differential voltage linear voltage stabilizer circuit of high PSRR |
-
2020
- 2020-03-02 CN CN202010134110.2A patent/CN111338413B/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030111986A1 (en) * | 2001-12-19 | 2003-06-19 | Xiaoyu (Frank) Xi | Miller compensated nmos low drop-out voltage regulator using variable gain stage |
CN104750148A (en) * | 2013-12-31 | 2015-07-01 | 北京兆易创新科技股份有限公司 | Low-dropout regulator |
CN108345341A (en) * | 2017-12-27 | 2018-07-31 | 思瑞浦微电子科技(苏州)股份有限公司 | A kind of linear voltage regulator that adaptive enhancing power supply inhibits |
CN109683651A (en) * | 2019-03-05 | 2019-04-26 | 电子科技大学 | A kind of low differential voltage linear voltage stabilizer circuit of high PSRR |
Non-Patent Citations (2)
Title |
---|
ANNAJIRAO GARIMELLA ETC.: "Pole-Zero Analysis of Low-Dropout (LDO) Regulators: A Tutorial Overview", 《2012 25TH INTERNATIONAL CONFERENCE ON VLSI DESIGN》 * |
周琦: "一种用于高速低抖动时钟电路的片上电源系统设计", 《中国优秀硕士学位论文全文数据库 信息科技辑》 * |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111711251A (en) * | 2020-07-23 | 2020-09-25 | 深圳市芯艺微电子有限公司 | Power management chip and application circuit and electronic equipment thereof |
US11467614B2 (en) * | 2020-09-10 | 2022-10-11 | Apple Inc. | Voltage mode low-dropout regulator circuit with reduced quiescent current |
CN113064460A (en) * | 2021-03-24 | 2021-07-02 | 成都瓴科微电子有限责任公司 | Low dropout regulator circuit with high power supply rejection ratio |
CN113325912A (en) * | 2021-06-10 | 2021-08-31 | 深圳市微源半导体股份有限公司 | LDO circuit suitable for wide input voltage range |
CN113325912B (en) * | 2021-06-10 | 2022-04-01 | 深圳市微源半导体股份有限公司 | LDO circuit suitable for wide input voltage range |
CN113721695A (en) * | 2021-08-20 | 2021-11-30 | 西安电子科技大学 | Dual-mode low dropout regulator, circuit thereof and electronic product |
CN113721695B (en) * | 2021-08-20 | 2022-06-17 | 西安电子科技大学 | Dual-mode low dropout regulator, circuit thereof and electronic product |
CN114200994A (en) * | 2021-12-07 | 2022-03-18 | 深圳市灵明光子科技有限公司 | Low dropout linear regulator and laser ranging circuit |
CN114706441A (en) * | 2022-04-07 | 2022-07-05 | 南京市智凌芯科技股份有限公司 | Low-power-consumption low-dropout linear voltage regulator |
CN114706441B (en) * | 2022-04-07 | 2023-08-04 | 南京市智凌芯科技股份有限公司 | Low-power-consumption low-dropout linear voltage regulator |
CN116048170A (en) * | 2022-12-30 | 2023-05-02 | 上海联影微电子科技有限公司 | Enhancement circuit and voltage stabilizer |
CN115993867A (en) * | 2023-03-03 | 2023-04-21 | 重庆大学 | Low-power-consumption high-voltage linear voltage stabilizer capable of adjusting output voltage and voltage stabilizing method thereof |
CN117277514A (en) * | 2023-11-17 | 2023-12-22 | 苏州贝克微电子股份有限公司 | Power supply circuit capable of reducing output voltage fluctuation |
CN117277514B (en) * | 2023-11-17 | 2024-02-09 | 苏州贝克微电子股份有限公司 | Power supply circuit capable of reducing output voltage fluctuation |
CN119002615A (en) * | 2024-10-25 | 2024-11-22 | 成都市易冲半导体有限公司 | Low-dropout voltage regulator and electronic equipment |
CN119276119A (en) * | 2024-12-09 | 2025-01-07 | 上海紫鹰微电子有限公司 | A high voltage to low voltage circuit and power management unit |
Also Published As
Publication number | Publication date |
---|---|
CN111338413B (en) | 2021-05-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN111338413A (en) | A Low Dropout Linear Regulator with High Power Supply Rejection Ratio | |
CN108776506B (en) | A High Stability Low Dropout Linear Regulator | |
CN106774614B (en) | A Low Dropout Linear Regulator Using Super Transconductance Structure | |
CN108803761B (en) | An LDO circuit with high-order temperature compensation | |
CN109976424B (en) | Non-capacitor type low dropout linear voltage regulator | |
CN114253330A (en) | A Fast Transient Response Low Dropout Linear Regulator Without Off-Chip Capacitor | |
CN102385408B (en) | Low dropout linear voltage regulator | |
CN104407662B (en) | A kind of underloading transient state strengthens the low pressure difference linear voltage regulator of circuit and this circuit integrated | |
CN111176358B (en) | Low-power-consumption low-dropout linear voltage regulator | |
WO2021035707A1 (en) | Low-dropout regulator | |
CN107168453A (en) | A kind of fully integrated low pressure difference linear voltage regulator based on ripple pre-amplification | |
CN111273724B (en) | Stability-compensated linear voltage regulator and design method thereof | |
CN207488871U (en) | A kind of CMOS low pressure difference linear voltage regulators using novel buffer | |
CN107315441B (en) | A kind of on piece low pressure difference linear voltage regulator with fast transient response | |
CN102609025A (en) | Dynamic current doubling circuit and linear voltage regulator integrated with the circuit | |
CN106774590A (en) | A kind of low-dropout linear voltage-regulating circuit of high stability high-power supply noise rejection ratio | |
CN107024958B (en) | A kind of linear voltage-stabilizing circuit with fast load transient response | |
CN110320963A (en) | Low-dropout linear voltage-regulating circuit | |
CN110399003B (en) | Relative negative power supply rail and relative positive power supply rail generating circuit | |
CN107422774B (en) | A kind of on piece LDO of low pressure fast transient response | |
CN111290460B (en) | A Low Dropout Linear Regulator with High Power Supply Rejection Ratio and Fast Transient Response | |
CN213934662U (en) | A Linear Voltage Regulator Circuit Without Off-chip Capacitor | |
CN115237193A (en) | An LDO system suitable for low voltage input and high current output | |
CN113377152B (en) | Quick response does not have external electric capacity type linear voltage regulator | |
CN110928350A (en) | A power supply with wide input voltage |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |