CN111162003B - Ion implantation method and ion implantation system - Google Patents
Ion implantation method and ion implantation system Download PDFInfo
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- CN111162003B CN111162003B CN202010000507.2A CN202010000507A CN111162003B CN 111162003 B CN111162003 B CN 111162003B CN 202010000507 A CN202010000507 A CN 202010000507A CN 111162003 B CN111162003 B CN 111162003B
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- 238000005468 ion implantation Methods 0.000 title claims abstract description 128
- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000009987 spinning Methods 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 abstract description 17
- 238000010884 ion-beam technique Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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Abstract
The invention provides an ion implantation method and an ion implantation system, wherein the ion implantation method comprises the following steps: providing a wafer, wherein a plurality of channel holes are formed in the wafer, the channel through holes in the central area of the wafer are vertical to the surface of the wafer, and the channel holes in the edge area of the wafer are inclined by an angle smaller than 90 degrees relative to the direction vertical to the surface of the wafer; the wafer is made to do arc-shaped reciprocating motion along a first direction, and ion implantation is carried out in the wafer along a second direction, wherein the first direction is vertical to the second direction. The ion implantation method ensures that ions can be implanted into the bottom of each channel hole by making the wafer do arc-shaped reciprocating motion along the first direction vertical to the second direction in the process of ion implantation along the second direction, so that the ion implantation amount at the bottom of each channel hole is the same, the influence on the ion implantation effect caused by different inclination degrees of the channel holes in different regions of the wafer compared with the direction vertical to the surface of the wafer is eliminated, the electrical property and the yield of a device can be ensured, and the whole wafer has better and uniform electrical property.
Description
Technical Field
The invention belongs to the technical field of integrated circuits, and particularly relates to an ion implantation method and an ion implantation system.
Background
In the 3D NAND production process, under the influence of the Etch process, the Channel Holes (CH) at the Wafer Center (Wafer Center) and the Wafer Edge (Wafer Edge) are not inclined as compared with the Wafer surface (tilt performance), for example, the Channel Hole at the Wafer Center is perpendicular to the Wafer surface, while the Channel Hole at the Wafer Edge is inclined at a certain angle as compared with the direction perpendicular to the Wafer surface, and the inclination of the Channel Hole is more severe closer to the Wafer Edge.
The conventional ion implantation process generally performs ion implantation on an ion beam in a direction perpendicular to the surface of a wafer, and the wafer reciprocates in the direction perpendicular to the ion implantation while performing the ion implantation. When the existing ion implantation process is adopted to implant ions into the channel hole, the ions can smoothly reach the bottom of the channel hole vertical to the surface of the wafer; for the channel hole inclined at a certain angle relative to the direction perpendicular to the surface of the wafer, part of ions hit the side wall of the channel hole, and only part of ions reach the bottom of the channel hole, so that the ion implantation amount at the bottom of the channel hole in different areas of the wafer is greatly different, and the electrical property and the yield of the device are affected.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide an ion implantation method and an ion implantation system, which are used to solve the problem in the prior art that the difference between the ion implantation at the bottom of the trench via in different regions of the wafer in the ion implantation process is very large due to the fact that the trench via in the edge region of the wafer is inclined at a certain angle relative to the direction perpendicular to the surface of the wafer, thereby affecting the electrical performance and yield of the device.
To achieve the above and other related objects, the present invention provides an ion implantation method, comprising:
providing a wafer, wherein a plurality of channel holes are formed in the wafer, the channel through holes in the central area of the wafer are vertical to the surface of the wafer, and the channel holes in the edge area of the wafer are inclined by an angle smaller than 90 degrees relative to the direction vertical to the surface of the wafer; and
and carrying out arc-shaped reciprocating motion on the wafer along a first direction, and carrying out ion implantation on the wafer along a second direction, wherein the first direction is vertical to the second direction.
Optionally, the wafer performs a simultaneous spinning motion while performing an arc-shaped reciprocating motion in a first direction.
Optionally, the first direction comprises a vertical direction and the second direction comprises a horizontal direction.
Optionally, performing ion implantation into the wafer by using an ion implantation device; and during ion implantation, the ion implantation device performs reciprocating scanning along the direction vertical to the ion implantation, and the width of the reciprocating scanning is larger than or equal to the diameter of the wafer.
Optionally, the wafer is placed on a wafer chuck, and the wafer chuck drives the wafer to perform an arc-shaped reciprocating motion along a first direction under the driving of a driving device.
Optionally, an arc angle of the wafer performing the arc-shaped reciprocating motion along the first direction is equal to an angle of the channel hole located in the edge region of the wafer inclined with respect to a direction perpendicular to the surface of the wafer.
The present invention also provides an ion implantation system, comprising:
the wafer sucker is used for sucking a wafer, a plurality of channel holes are formed in the wafer, the channel holes in the central area of the wafer are vertical to the surface of the wafer, and the channel holes in the edge area of the wafer are inclined by an angle smaller than 90 degrees compared with the direction vertical to the surface of the wafer;
the first driving device is connected with the wafer sucker and is used for driving the wafer sucker to drive the wafer to do arc-shaped reciprocating motion along a first direction; and
and the ion implantation device is used for performing ion implantation in the wafer along a second direction, and the second direction is vertical to the first direction.
Optionally, the ion implantation system further includes a second driving device, where the second driving device is connected to the wafer chuck and is configured to drive the wafer chuck to drive the wafer to spin.
Optionally, the ion implantation system further includes a third driving device, where the third driving device is connected to the ion implantation device, and is configured to drive the ion implantation device to perform a back-and-forth scan along a direction perpendicular to the ion implantation direction while performing the ion implantation, where a width of the back-and-forth scan is greater than or equal to a diameter of the wafer.
Optionally, the first direction comprises a vertical direction and the second direction comprises a horizontal direction.
Optionally, an arc angle of the wafer performing the arc-shaped reciprocating motion along the first direction is equal to an angle of the channel hole located in the edge region of the wafer inclined with respect to a direction perpendicular to the surface of the wafer.
As described above, the ion implantation method and the ion implantation system according to the present invention have the following advantageous effects:
according to the ion implantation method, the wafer is made to do arc-shaped reciprocating motion along the first direction vertical to the second direction in the process of ion implantation along the second direction, so that ions can be ensured to be implanted to the bottom of each channel hole, the ion implantation amount at the bottom of each channel hole is the same, the influence on the ion implantation effect caused by different inclination degrees of the channel holes in different regions of the wafer compared with the direction vertical to the surface of the wafer is eliminated, the electrical property and the yield of a device can be ensured, and the whole wafer has better and uniform electrical property;
the ion implantation system can drive the wafer to do arc-shaped reciprocating motion along the first direction vertical to the second direction by using the first driving device in the process that the ion implantation device performs ion implantation on the wafer along the second direction, can ensure that ions can be implanted into the bottom of each channel hole, enables the ion implantation amount of the bottom of each channel hole to be the same, eliminates the influence on the ion implantation effect caused by different inclination degrees of the channel holes in different regions of the wafer compared with the direction vertical to the surface of the wafer, can ensure the electrical property and the yield of a device, and enables the whole wafer to have better and uniform electrical property.
Drawings
Fig. 1 is a flowchart illustrating an ion implantation method according to a first embodiment of the present invention.
Fig. 2 is a schematic view illustrating an ion implantation process performed on a wafer in an ion implantation method according to a first embodiment of the invention.
Fig. 3 is a schematic structural diagram of an ion implantation system according to a second embodiment of the present invention.
Description of the element reference numerals
10 ion beam
11 wafer
111 trench hole
112 central region of wafer
113 wafer edge region
12 wafer chuck
13 first driving device
14 ion implantation device
15 second drive device
16 third driving device
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and although the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation, the type, quantity and proportion of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
Example one
Referring to fig. 1, the present embodiment further provides an ion implantation method, which includes the following steps:
1) providing a wafer, wherein a plurality of channel holes are formed in the wafer, the channel through holes in the central area of the wafer are vertical to the surface of the wafer, and the channel holes in the edge area of the wafer are inclined by an angle smaller than 90 degrees relative to the direction vertical to the surface of the wafer; and
2) and carrying out arc-shaped reciprocating motion on the wafer along a first direction, and carrying out ion implantation on the wafer along a second direction, wherein the first direction is vertical to the second direction.
In step 1), referring to step S1 in fig. 1 and fig. 2, a wafer is provided, in which a plurality of channel holes 111 are formed, the channel holes 111 located in the wafer center region 112 are perpendicular to the surface of the wafer, and the channel holes 111 located in the wafer edge region 113 are inclined at an angle smaller than 90 ° with respect to a direction perpendicular to the wafer surface.
As an example, the wafer may be selected according to actual requirements of the device, and the wafer may include a Silicon wafer, a Germanium (Ge) wafer, a Silicon Germanium (SiGe) wafer, a SOI (Silicon-on-Insulator) wafer, a GOI (Germanium-on-Insulator) wafer, or the like; preferably, in this embodiment, the wafer includes a silicon wafer.
It should be noted that, before the channel hole 111 is formed, some device structures, such as MOS transistors, etc., may be formed in advance in the wafer; of course, the wafer may also be a bare wafer, i.e., before the channel hole 111 is formed, no device structure is formed in the wafer.
It should be noted that fig. 2 only illustrates the wafer center region 112, the wafer edge region 113 and the channel hole 111 of the wafer, and does not illustrate the complete structure of the wafer.
It should be noted that, the "wafer edge area 113" herein may specifically be an edge area of a process area in the wafer, that is, an edge area of an area in the wafer for performing a process to form a product; of course, the "wafer edge area 113" may also be an area where the edge of the wafer has a predetermined width.
By way of example, the channel hole 111 may include, but is not limited to, a capacitor hole in a 3D NAND, an interconnect hole, and the like.
As an example, the channel hole 111 may be a channel hole having a larger aspect ratio, and the aspect ratio of the channel hole 111 may be set according to actual needs, preferably, in this embodiment, the aspect ratio of the channel hole 111 may be, but is not limited to, 3 or more, specifically, the aspect ratio of the channel hole 111 may be 3 to 20, such as 3, 5, 10, 15, or 20, and the like.
As an example, the wafer may be etched by using a photolithography and etching process to form the channel hole 111 in the wafer. Specifically, the wafer may be etched by using photolithography and dry etching processes, so as to form the channel hole 111 in the wafer. Due to the influence of the etching process, the channel holes 111 formed in the wafer edge region 113 and the channel holes 111 formed in the wafer center region 112 have different inclination angles with respect to the direction perpendicular to the wafer surface, for example, the channel holes 111 in the wafer center region 112 may be perpendicular to the wafer surface, the channel holes 111 in the wafer edge region 113 may be inclined at a certain angle with respect to the direction perpendicular to the wafer surface, and the closer to the edge of the wafer edge region 113 away from the wafer center region 112, the larger the inclination angle of the channel holes 111 with respect to the direction perpendicular to the wafer surface. Specifically, the inclination angle of the channel hole 111 in the wafer edge region 113 with respect to the direction perpendicular to the wafer surface may be set according to actual needs, for example, the inclination angle of the channel hole 111 in the wafer edge region 113 with respect to the direction perpendicular to the wafer surface may be greater than 0 ° and less than 30 °, specifically, the inclination angle may be 1 °, 5 °, 10 °, 15 °, 20 °, 25 °, or 30 °.
In step 2), please refer to S2 in fig. 1 and fig. 2, the wafer is moved back and forth along a first direction in an arc shape, and ion implantation is performed into the wafer along a second direction, wherein the first direction is perpendicular to the second direction.
As an example, the wafer may be subjected to ion implantation while being subjected to arc-shaped reciprocating movement in the first direction.
As an example, the first direction may include, but is not limited to, a vertical direction, and the second direction may be, but is not limited to, a horizontal direction. Specifically, as shown in fig. 2, after the wafer is vertically placed, the ion beam 10 performs ion implantation on the wafer along the horizontal direction, and simultaneously, the wafer performs arc-shaped up and down reciprocating motion along the vertical direction. Wherein, the arc-shaped double-arrow dotted line in fig. 2 is the movement track of the wafer.
As an example, the wafer may be adsorbed on a surface of a wafer chuck (not shown in fig. 2), and the wafer chuck may be driven by a first driving device (not shown in fig. 2) to move the wafer back and forth in an arc-shaped manner along a first direction; the wafer chuck may comprise a vacuum chuck or an electrostatic chuck, and the first driving device may include, but is not limited to, a driving motor, etc.
As an example, the speed and the number of times of the arc-shaped reciprocating movement of the wafer along the first direction may be set according to actual needs, and is not limited herein.
As an example, the wafer may also perform a spin motion while performing an arc-shaped reciprocating motion along the first direction, that is, the wafer may also rotate while performing an arc-shaped reciprocating motion along the first direction. The speed of the wafer spin motion can be set according to actual needs, and is not limited herein. The wafer can do arc reciprocating motion along the first direction and can also do spinning motion at the same time, so that all holes in the wafer can be ensured to be implanted with ions, and the uniformity of the holes can be improved.
As an example, the wafer chuck may be driven by a second driving device (not shown in fig. 2) to spin the wafer, and the second driving device may include, but is not limited to, a driving motor, and the like.
As an example, an ion implantation apparatus (not shown in fig. 2) may be used to perform ion implantation into the wafer; and during ion implantation, the ion implantation device performs reciprocating scanning along the direction vertical to the ion implantation, and the width of the reciprocating scanning is larger than or equal to the diameter of the wafer. The ion implantation device may be any device that can generate the desired implanted ions.
As an example, a third driving device (not shown in fig. 2) may be used to drive the ion implantation device to perform a back and forth scan in a direction perpendicular to the ion implantation. The third driving means may include, but is not limited to, a driving motor, etc.
As an example, P-type dopant ions or N-type dopant ions may be implanted into the wafer.
As an example, the arc angle of the wafer performing the arc-shaped reciprocating motion along the first direction is equal to the angle of the channel hole 111 in the edge region 113 of the wafer inclined with respect to the direction perpendicular to the surface of the wafer. By setting the angles of the two to be the same, it can be ensured that the direction of the ion implantation is always parallel to the channel hole 111 where the ion implantation is performed, so that the ions can be smoothly implanted to the bottom of the channel hole 111.
According to the ion implantation method, the wafer is made to do the arc-shaped reciprocating motion along the first direction in the process of ion implantation along the second direction, so that ions can be implanted into the bottom of each channel hole 111, the ion implantation amount at the bottom of each channel hole 111 is the same, the influence on the ion implantation effect caused by different inclination degrees of the channel holes 111 in different regions of the wafer compared with the direction vertical to the surface of the wafer is eliminated, the electrical property and the yield of a device can be ensured, and the whole wafer has better and uniform electrical property.
Example two
Referring to fig. 3 in conjunction with fig. 1 to fig. 2, an ion implantation system is further provided in the present embodiment, the ion implantation system includes: the wafer chuck 12 is used for adsorbing a wafer 11, a plurality of channel holes 111 are formed in the wafer 11, the channel holes 111 in a wafer center region 112 are perpendicular to the surface of the wafer 11, and the channel holes 111 in a wafer edge region 113 are inclined at an angle smaller than 90 degrees with respect to a direction perpendicular to the surface of the wafer 11; the first driving device 13 is connected with the wafer chuck 12, and the first driving device is used for driving the wafer chuck 12 to drive the wafer 11 to perform arc-shaped reciprocating motion along a first direction; and an ion implantation device 14, wherein the ion implantation device 13 performs ion implantation into the wafer 11 along a second direction, and the second direction is perpendicular to the first direction.
The wafer chuck may comprise a vacuum chuck or an electrostatic chuck, as examples.
By way of example, the channel hole 111 may include, but is not limited to, a capacitor hole in a 3D NAND, an interconnect hole, and the like.
As an example, the channel hole 111 may be a channel hole having a larger aspect ratio, and the aspect ratio of the channel hole 111 may be set according to actual needs, preferably, in this embodiment, the aspect ratio of the channel hole 111 may be, but is not limited to, 3 or more, specifically, the aspect ratio of the channel hole 111 may be 3 to 20, such as 3, 5, 10, 15, or 20, and the like.
As an example, the first direction may include, but is not limited to, a vertical direction, and the second direction may be, but is not limited to, a horizontal direction.
As an example, the first driving device 13 may include, but is not limited to, a driving motor, and the like.
As an example, the ion implantation system further includes a second driving device 15, the second driving device 15 is connected to the wafer chuck 12, the second driving device 15 is configured to drive the wafer chuck 12 to drive the wafer 11 to perform a spinning motion, that is, the second driving device 15 drives the wafer chuck 12 to drive the wafer 11 to rotate, and the second driving device 15 may include, but is not limited to, a driving motor, and the like.
As an example, the ion implantation system further includes a third driving device 16, the third driving device 16 is connected to the ion implantation device 14, the third driving device 16 is configured to drive the ion implantation device 14 to perform a back-and-forth scan along a direction perpendicular to the ion implantation while performing the ion implantation, and a width of the back-and-forth scan of the ion implantation device 14 is greater than or equal to a diameter of the wafer 11. The third driving device 16 may include, but is not limited to, a driving motor, etc.
As an example, the arc angle of the first driving device 13 driving the wafer chuck 12 to move the wafer 11 back and forth along the first direction is equal to the angle of the channel hole 111 in the wafer edge area 113 inclined relative to the direction perpendicular to the surface of the wafer 11. By setting the angles of the two to be the same, it can be ensured that the direction of the ion implantation is always parallel to the channel hole 111 where the ion implantation is performed, so that the ions can be smoothly implanted to the bottom of the channel hole 111.
The ion implantation system of the invention can drive the wafer 11 to do arc-shaped reciprocating motion along the first direction by using the first driving device 13 in the process that the ion implantation device 14 performs ion implantation on the wafer 11 along the second direction, so that ions can be ensured to be implanted into the bottom of each channel hole 111, the ion implantation amount at the bottom of each channel hole 111 is the same, the influence on the ion implantation effect caused by different inclination degrees of the channel holes 111 in different areas of the wafer 11 compared with the direction vertical to the surface of the wafer 11 is eliminated, the electrical property and the yield of devices can be ensured, and the whole wafer 11 has better and uniform electrical property.
As described above, the ion implantation method and the ion implantation system according to the present invention include the steps of: providing a wafer, wherein a plurality of channel holes are formed in the wafer, the channel through holes in the central area of the wafer are vertical to the surface of the wafer, and the channel holes in the edge area of the wafer are inclined by an angle smaller than 90 degrees relative to the direction vertical to the surface of the wafer; and enabling the wafer to do arc-shaped reciprocating motion along a first direction, and performing ion implantation into the wafer along a second direction, wherein the first direction is vertical to the second direction. According to the ion implantation method, the wafer is made to do arc-shaped reciprocating motion along the first direction vertical to the second direction in the process of ion implantation along the second direction, so that ions can be ensured to be implanted to the bottom of each channel hole, the ion implantation amount at the bottom of each channel hole is the same, the influence on the ion implantation effect caused by different inclination degrees of the channel holes in different regions of the wafer compared with the direction vertical to the surface of the wafer is eliminated, the electrical property and the yield of a device can be ensured, and the whole wafer has better and uniform electrical property; the ion implantation system can drive the wafer to do arc-shaped reciprocating motion along the first direction vertical to the second direction by using the first driving device in the process that the ion implantation device performs ion implantation on the wafer along the second direction, can ensure that ions can be implanted into the bottom of each channel hole, enables the ion implantation amount of the bottom of each channel hole to be the same, eliminates the influence on the ion implantation effect caused by different inclination degrees of the channel holes in different regions of the wafer compared with the direction vertical to the surface of the wafer, can ensure the electrical property and the yield of a device, and enables the whole wafer to have better and uniform electrical property.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which may be made by those skilled in the art without departing from the spirit and scope of the present invention as defined in the appended claims.
Claims (9)
1. An ion implantation method, comprising the steps of:
providing a wafer, wherein a plurality of channel holes are formed in the wafer, the channel holes in the central area of the wafer are vertical to the surface of the wafer, and the channel holes in the edge area of the wafer are inclined by an angle smaller than 90 degrees relative to the direction vertical to the surface of the wafer; and
enabling the wafer to do arc-shaped reciprocating motion along a first direction and to conduct ion implantation into the wafer along a second direction, wherein the first direction is vertical to the second direction;
the arc angle of the wafer performing arc-shaped reciprocating motion along the first direction is equal to the angle of inclination of the channel hole in the edge area of the wafer relative to the direction vertical to the surface of the wafer.
2. The ion implantation method of claim 1, wherein: and the wafer performs arc-shaped reciprocating motion along the first direction and simultaneously performs spinning motion.
3. The ion implantation method of claim 1, wherein: the first direction comprises a vertical direction and the second direction comprises a horizontal direction.
4. The ion implantation method according to claim 1, wherein ion implantation is performed into the wafer using an ion implantation apparatus; and during ion implantation, the ion implantation device performs reciprocating scanning along the direction vertical to the ion implantation, and the width of the reciprocating scanning is larger than or equal to the diameter of the wafer.
5. The method of claim 1, wherein the wafer is placed on a wafer chuck, and the wafer chuck is driven by a driving device to move the wafer back and forth in an arc along a first direction.
6. An ion implantation system, comprising:
the wafer sucker is used for sucking a wafer, a plurality of channel holes are formed in the wafer, the channel holes in the central area of the wafer are vertical to the surface of the wafer, and the channel holes in the edge area of the wafer are inclined by an angle smaller than 90 degrees relative to the direction vertical to the surface of the wafer;
the first driving device is connected with the wafer sucker and is used for driving the wafer sucker to drive the wafer to do arc-shaped reciprocating motion along a first direction; and
the ion implantation device is used for performing ion implantation in the wafer along a second direction, and the second direction is vertical to the first direction;
the arc angle of the wafer performing arc-shaped reciprocating motion along the first direction is equal to the angle of inclination of the channel hole in the edge area of the wafer relative to the direction vertical to the surface of the wafer.
7. The ion implantation system of claim 6, wherein: the ion implantation system further comprises a second driving device, wherein the second driving device is connected with the wafer sucker and is used for driving the wafer sucker to drive the wafer to perform self-rotation motion.
8. The ion implantation system of claim 6, wherein: the ion implantation system further comprises a third driving device, wherein the third driving device is connected with the ion implantation device and used for driving the ion implantation device to perform reciprocating scanning along a direction perpendicular to the ion implantation direction while performing ion implantation, and the width of the reciprocating scanning is larger than or equal to the diameter of the wafer.
9. The ion implantation system of claim 6, wherein: the first direction comprises a vertical direction and the second direction comprises a horizontal direction.
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| JP3288554B2 (en) * | 1995-05-29 | 2002-06-04 | 株式会社日立製作所 | Ion implantation apparatus and ion implantation method |
| US8698110B2 (en) * | 2011-05-05 | 2014-04-15 | Advanced Ion Beam Technology, Inc. | Ion implanting system |
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