CN110047739B - Rework method of ion implantation machine - Google Patents
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- CN110047739B CN110047739B CN201910319926.XA CN201910319926A CN110047739B CN 110047739 B CN110047739 B CN 110047739B CN 201910319926 A CN201910319926 A CN 201910319926A CN 110047739 B CN110047739 B CN 110047739B
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- 238000005468 ion implantation Methods 0.000 title claims abstract description 150
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- 238000002513 implantation Methods 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
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Abstract
The invention discloses a rework method of an ion implantation machine, which comprises the following steps: judging the movement direction of the wafer before the interruption of the ion implantation program, judging whether the movement direction of the wafer is far away from the initial position before the interruption of the ion implantation program, if so, rotating the wafer by 180 degrees, then establishing a make-up process to carry out ion implantation on the wafer until no residual dose exists, stopping the ion implantation, if not, directly establishing the make-up process to carry out the ion implantation on the wafer until no residual dose exists, and stopping the ion implantation. By adopting the method, the reworked wafer can firstly implant the ion and the part of the wafer without implanted ions caused by the interruption of the ion implantation process, thereby solving the problems that the part of the wafer which is already implanted is over-implanted and the part of the wafer which is not implanted is also correspondingly under-implanted due to the manual establishment of the repair process in the prior art, so that the resistance value adjusted by the ion implantation process is different and the uniformity is reduced.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a reworking method of an ion implantation machine.
Background
In the process of ion implantation of the substrate, the ion implantation machine often encounters various conditions, which causes the ion implantation machine to alarm and interrupt the implantation procedure, so that the rework operation of the ion implanted substrate is required to make up for the residual dosage.
Under the condition that normal interruption does not cause software downtime, the machine can automatically generate a rework process and record the position and dosage during interruption. However, the interruption of the implantation procedure usually accompanies the interruption of the software, so that the software cannot automatically generate the rework process, and at this time, although the equipment engineer records the position of the silicon wafer and the implanted dose when dealing with the relevant situation, since there is no rework process, in order to solve the above problem, the existing method is to let the process engineer manually establish the rework process (rework method) according to the remaining dose. For example, a single-wafer ion implanter mostly scans a wafer up and down to perform operations on the wafer through a ribbon-shaped ion beam, and when an implantation process is interrupted, a process engineer manually establishes a padding process according to the remaining dose, and then the wafer starts to operate from an initial position and uniformly implants the remaining dose into each scan. However, this solution will cause the implanted portion to be over-implanted and the non-implanted portion to be less implanted, so that the resistance adjusted by the ion implantation process will be different, the uniformity will be reduced, and even the yield of the wafer will be reduced.
Disclosure of Invention
The invention aims to provide a rework method of an ion implantation machine, which is used for solving the problems that the prior rework process causes that the implanted part of a wafer needing to be reworked for ion implantation is over-implanted, and the non-implanted part is less implanted correspondingly, so that the resistance value regulated by the ion implantation process is different, the uniformity is reduced, and the yield of chips is reduced.
In order to solve the problems, the invention is realized by the following technical scheme:
a rework method of an ion implantation machine comprises the following steps: step S1, determining the movement (moving) direction of the wafer before the ion implantation process is interrupted; step S2, before the implantation procedure is interrupted, it is determined whether the moving direction of the wafer is away from the initial position, if yes, step S2.1 is performed, and if no, step S2.2 is performed. S2.1, rotating the wafer by 180 degrees, and entering the step S2.2; and S2.2, establishing a repairing process to carry out ion implantation on the wafer until no residual dosage exists, and stopping the ion implantation.
Further, the established subsidy printing process comprises: and taking the total dose as the residual implantation dose when the ion implantation program is interrupted, and carrying out ion implantation on the wafer by using the current value of the ion beam when the ion implantation program is interrupted.
Further, the rework method as described above is suitable for single wafer type ion implantation tools.
Further, the single-wafer ion implanter comprises: the device comprises an ion source, an extraction device, an ion analyzer, a linear accelerator, a silicon wafer transmission system, a terminal platform for loading and unloading a silicon wafer of a vacuum lock, a diagonal device, a scanning device and a computer control system; the ion source is used for ionizing impurity source substances to generate ions; the extraction device is used for extracting positive ions generated by the ion source to form an ion beam; the ion analyzer is used for separating various impurities in the ion beam to obtain the required impurity ion beam; the linear accelerator is used for accelerating and bunching the impurity ion beam and introducing the impurity ion beam to the scanning device; the silicon wafer transmission system is used for transmitting the wafer to be subjected to ion implantation into the vacuum lock; the terminal station is used for transmitting the wafer to be subjected to ion implantation in the vacuum lock into the diagonal device; the angle aligning device is used for adjusting the angle of the wafer to be subjected to ion implantation and transmitting the wafer to the scanning device; the computer control system is used for controlling the whole ion implantation process according to the preset ion implantation process to obtain the state and the information of the ion implantation device.
Furthermore, the scanning device further comprises a fixed seat, a vertical scanning mechanism which is arranged on the fixed seat and can vertically move up and down along the fixed seat, and a target table which is arranged on the vertical scanning mechanism and can vertically move up and down along the vertical scanning mechanism and is used for clamping a wafer to be subjected to ion implantation, wherein the target table can also adjust the inclination of the wafer so as to correct the implantation angle of the bunched impurity ion beam.
Further, when the wafer is subjected to ion implantation, the wafer starts from an initial position and is far away from the initial position to be close to the bunched ion beam, when an ion implantation program is interrupted, the wafer is rotated by 180 degrees, the computer system establishes a make-up process, controls the target table with the wafer to recover from the interrupted position to the initial position, and then starts to perform ion implantation;
and the target table drives the wafer to start from an initial position, the wafer far away from the initial position passes through the ion beam, and then the wafer reciprocates up and down along the vertical direction to realize vertical scanning until no residual dose exists, and the ion implantation is stopped.
Further, when the wafer moves close to the initial position before the ion implantation program is interrupted, the computer system directly establishes a make-up process, controls the target table with the wafer to recover from the interrupted position to the initial position, and then starts to perform ion implantation; and the target table drives the wafer to start from an initial position, the wafer far away from the initial position passes through the ion beam, and then the wafer reciprocates up and down along the vertical direction to realize vertical scanning until no residual dose exists, and the ion implantation is stopped.
Further, the wafer is rotated by 180 degrees by adopting the following method, and the computer control system is adopted to perform program setting on the single-chip ion implantation machine and drive the angle aligning device to rotate.
Furthermore, the angle device is provided with an infrared device, an inherent unfilled corner in the wafer to be ion implanted is found through infrared rays emitted by the infrared device for positioning, and then the original corner is used as an origin point for angle adjustment of 180 degrees of rotation.
Further, the stopping of the ion implantation is performed by turning off the ion source or controlling the scanning device to move by the computer control system so that the wafer is not within the irradiation range of the bunched ion beam.
Compared with the prior art, the invention has the following technical effects:
the rework method judges whether the moving direction of the wafer is far away from the initial position before the interruption of the ion implantation program by judging the moving direction of the wafer before the interruption of the ion implantation program, if so, the wafer is rotated by 180 degrees, then a make-up process is established to carry out ion implantation on the wafer until no residual dose exists, the ion implantation is stopped, and if not, the make-up process is directly established to carry out the ion implantation on the wafer until no residual dose exists, and the ion implantation is stopped. By adopting the method, the reworked wafer can be implanted into the part of the wafer which is not implanted with ions, and the problems that in the prior art, the part of the wafer which is implanted is over-implanted due to the fact that a repairing and beating process is manually established, and the part of the wafer which is not implanted is also implanted with less ions correspondingly, so that the resistance value adjusted by the ion implantation process is different, the uniformity is reduced, and the yield of chips is reduced are solved.
Drawings
Fig. 1 is a flowchart illustrating a rework method of an ion implantation apparatus according to an embodiment of the invention;
fig. 2 is a schematic diagram illustrating a process of reworking a wafer according to the rework method when the wafer is moved away from the initial position before the implantation process is interrupted;
fig. 3 is a schematic diagram illustrating a process of reworking a wafer according to the rework method when the wafer moves in a direction close to the initial position before the implantation process is interrupted.
Detailed Description
The following describes in more detail embodiments of the present invention with reference to the schematic drawings. Advantages and features of the present invention will become apparent from the following description and claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
First, a single-wafer ion implantation apparatus according to the present embodiment will be described. In a semiconductor manufacturing process, an ion implantation process is required for a semiconductor wafer for the purpose of changing conductivity, changing a crystal structure of the semiconductor wafer, and the like, and the ion implantation process is performed in an ion implantation apparatus.
The single-wafer type ion implantation apparatus is an apparatus that transports ions generated in an ion source to an ion implantation area as an ion beam, and is an ion implantation apparatus that places one semiconductor wafer in the ion implantation area, implants ions into the semiconductor wafer, places another semiconductor wafer again, and implants ions into the first predetermined number of semiconductor wafers by repeating this process. In a single-wafer type ion implantation apparatus, an electric field or a magnetic field acts on ions in a space where an ion beam is transported from an ion source to an ion implantation region, and the ion beam is scanned in one direction in the space of the ion implantation region and a semiconductor wafer is scanned (moved) in a direction orthogonal to the scanning direction of the ion beam.
In addition, with respect to the unidirectional scanning ion beam, the semiconductor wafer is scanned in a direction orthogonal (intersecting) to the scanning direction of the ion beam. When the semiconductor wafer is fixed, ions transferred to the ion implantation area space are implanted into the semiconductor wafer while creating a virtual planar ion implantation area in the ion implantation area space by scanning the ion beam and mechanically scanning the semiconductor wafer.
In other words, the single-wafer type ion implantation apparatus transports ions generated in an ion source as an ion beam to an ion implantation area space, and implants ions into a semiconductor wafer in the ion implantation area space. In this case, the single-wafer ion implantation apparatus causes a periodically varying electric field or a periodically varying magnetic field to act on ions during transportation of the ion beam, thereby unidirectionally scanning the ion beam in an ion implantation region space and scanning the semiconductor wafer in a direction orthogonal to the scanning direction. The single-wafer type ion implantation apparatus may be referred to as an ion implantation apparatus in which the relative relationship between ions implanted into a semiconductor wafer can be regarded as a virtual planar ion implantation region by using these two types of scanning.
Hereinafter, the direction in which the ion beam is scanned may be referred to as an X-scanning direction, and the direction in which the semiconductor wafer is scanned may be referred to as a Y-scanning direction. In addition, as for the term of the Y scanning direction, in the virtual planar ion implantation region, the term of the Y scanning direction may be used as well for the direction orthogonal to the direction of the scanned ion beam. The "Y scanning direction" is also a direction in which the semiconductor wafer is mechanically scanned in real space, and is a direction orthogonal to the direction of the scanned ion beam in the virtual planar ion implantation region.
The single-wafer type ion implantation apparatus as described above includes: the device comprises an ion source, an extraction device, an ion analyzer, a linear accelerator, a silicon wafer transmission system, a terminal platform for loading and unloading a silicon wafer of a vacuum lock, a diagonal device, a scanning device and a computer control system; the ion source is used for ionizing impurity source substances to generate ions; the extraction device is used for extracting positive ions generated by the ion source to form an ion beam; the ion analyzer is used for separating various impurities in the ion beam to obtain the required impurity ion beam; the linear accelerator is used for accelerating and bunching the impurity ion beam and introducing the impurity ion beam to the scanning device; the silicon wafer transmission system is used for transmitting the wafer to be subjected to ion implantation into the vacuum lock; the terminal station is used for transmitting the wafer to be subjected to ion implantation in the vacuum lock into the diagonal device; the angle aligning device is used for adjusting the angle of the wafer to be subjected to ion implantation and transmitting the wafer to the scanning device; the scanning device further comprises a fixed seat, a vertical scanning mechanism which is arranged on the fixed seat and can vertically move up and down along the fixed seat, and a target table which is arranged on the vertical scanning mechanism and can vertically move up and down along the vertical scanning mechanism and is used for clamping a wafer to be ion implanted, wherein the target table can also adjust the inclination of the wafer so as to correct the implantation angle of the bunched impurity ion beam; the computer control system is used for controlling the whole ion implantation process according to the preset ion implantation process to obtain the state and the information of the ion implantation device.
The ion source is used for ionizing impurity source substances to generate ions, and the extraction device is used for extracting positive ions generated by the ion source, particularly collecting all the positive ions generated in the ion source and enabling the positive ions to form an ion beam. However, the ion beam may contain many different types of ions.
The ion analyzer is used for separating required impurity ions from the ion beam mixed with a plurality of ions of different types to form the required impurity ion beam.
The linear accelerator is used to accelerate and bunch the desired impurity ion beam from the ion analyzer.
The linear accelerator is also provided at its end with a final energy analysis magnet, which may be an arc magnet,
the magnet eliminates beam impurities by removing mass except required nuclide, and ensures that ion beams with single impurities and single energy are formed. The ion beam thus obtained is pure and has a predetermined energy level, and can be implanted onto a semiconductor wafer to be implanted, i.e. introduced into the scanning device.
Since the beam spot of the ion beam, which is pure and has a predetermined energy level, is small, for example: the beam spot of the medium current ion beam is about 1cm2Ion beam of high currentThe beam spot is about 3cm2The normal semiconductor wafer is a silicon semiconductor wafer. And among semiconductor wafers made of silicon, semiconductor wafers having a diameter of 300mm are widely used at present in semiconductor device mass production factories. And, research is currently being conducted worldwide for the use of semiconductor wafers having a diameter of 450 mm. As for a semiconductor wafer made of silicon having a diameter smaller than 300mm, a semiconductor wafer having a diameter of 200mm is partially used in mass production, but its market share is gradually declining. In addition, a small number of silicon semiconductor wafers having a diameter of 150mm are used in a mass production factory. Therefore, if the ion implantation process is to be performed on the entire semiconductor wafer, the ion beam and/or the silicon wafer must be driven to move by the scanning device, so that the ion beam scans and covers the entire wafer, thereby completing the ion implantation process on the semiconductor wafer.
The silicon wafer transmission system is used for transmitting the wafer to be subjected to ion implantation into the vacuum lock; the terminal station is used for transmitting the wafer to be subjected to ion implantation in the vacuum lock into the diagonal device; the angle adjusting device is used for adjusting the angle of the wafer to be subjected to ion implantation and transmitting the wafer to the scanning device.
In this embodiment, the scanning device further includes a fixing base, a vertical scanning mechanism mounted on the fixing base and capable of vertically moving up and down along the fixing base, and a target table disposed on the vertical scanning mechanism and capable of vertically moving up and down along with the vertical scanning mechanism and used for clamping a wafer to be ion implanted, wherein the target table is further capable of adjusting the inclination of the wafer to correct the implantation angle of the impurity ion beam after being focused.
When the normal injection program is interrupted and the software is not shut down, the computer control system controls the ion injection machine to automatically generate a rework process, records the position and the dosage when the ion injection machine is interrupted, and then automatically rework and repair the interrupted semiconductor wafer (i.e. injecting the residual ion injection dosage), thereby completing the ion injection process of the semiconductor wafer.
As described in the background art, when an implantation procedure is interrupted, the computer control system cannot control the ion implantation machine to automatically generate a rework process, and the conventional rework method requires a process engineer to manually establish a rework process according to the remaining dose, and for a wafer of the manually established rework process, the wafer starts to operate from an initial position and the remaining dose is uniformly implanted into each scan, which may cause over-implantation of an implanted portion and correspondingly less implantation of an unimplanted portion, thereby causing a difference in resistance value adjusted by the ion implantation process, a decrease in uniformity, and further a decrease in yield of chips.
In order to solve the above problem, the present invention provides a rework method of an ion implantation machine, as shown in fig. 1, the rework method includes:
step S1, determining the movement (moving) direction of the wafer before the ion implantation process is interrupted, and proceeding to step S2;
step S2, before the implantation procedure is interrupted, it is determined whether the moving direction of the wafer is away from the initial position, if yes, step S2.1 is performed, and if no, step S2.2 is performed.
S2.1, rotating the wafer by 180 degrees, and entering the step S2.2;
and S2.2, establishing a repairing process to carry out ion implantation on the wafer until no residual dosage exists, and stopping the ion implantation.
Specifically, based on the single-wafer ion implantation apparatus described above, as shown in fig. 2, the semiconductor wafer 200 is located at an initial position (a dotted line position in fig. 2), the ion beam 100 in the ion implantation process is preset to be located above the initial position, the ion beam 100 is an ion beam with preset energy, and is subjected to electrical scanning and electromagnet correction in a horizontal direction (an X-axis direction in fig. 2), and finally reaches a target stage which is divergent in parallel, as shown in fig. 2, the ion beam 100 is kept stable in the horizontal direction, and then the target stage is reciprocated up and down by the scanning apparatus provided in the single-wafer ion implantation apparatus described above to realize vertical scanning, in addition. The adjustment of the ion implantation angle can be realized through the tilting motion of the target table.
In this embodiment, the implantation process only makes the target table reciprocate up and down to realize vertical scanning, so that the ion beam 100 and the wafer 200 move in a direction perpendicular to each other to implant. When ion implantation is started on the wafer 200, the wafer 200 starts from an initial position and is far away from the initial position to approach the ion beam 100, when the ion implantation process is interrupted, the upper half part of the wafer 200 is implanted with partial ions, but the lower half part of the wafer 200 is not implanted, therefore, after the wafer 200 is rotated by 180 degrees, when ion implantation is performed on the wafer 200 by adopting the established back-and-forth process, the computer system controls the target table with the wafer 200 to recover from the interrupted position to the initial position when ion implantation is not performed, then ion implantation is started, namely the target table drives the wafer 200 to start from the initial position, the wafer 200 passes through the ion beam 100, and then the wafer vertically reciprocates up and down along the vertical direction (the Y axis in fig. 2) to realize vertical scanning until no residual dose exists (the preset ion implantation process is completed), the ion implantation is stopped. It can be seen that after the wafer 200 is rotated by 180 degrees and then ion implantation is performed from the initial position, the wafer portion without ion implantation is implanted first, so that the problems that in the prior art, the wafer portion which is already implanted is over-implanted and the wafer portion which is not implanted is also implanted less due to the fact that a manually-established padding process is adopted, so that the resistance value adjusted by the ion implantation process is different, the uniformity is reduced, and the yield of chips is reduced are solved.
In the present embodiment, the method of rotating the wafer 200 by 180 degrees includes, but is not limited to, the following methods: and setting a program of the single-wafer type ion implantation machine by adopting the computer control system, and driving the angle aligning device to rotate. Furthermore, the angle device is provided with an infrared device, an inherent unfilled corner in the wafer to be ion implanted is found through infrared rays emitted by the infrared device for positioning, and then the original corner is used as an origin point for angle adjustment of 180 degrees of rotation.
Further, the method for stopping ion implantation includes, but is not limited to, the following methods: turning off the ion source or controlling the scanning device to move by the computer control system so that the wafer is not within an irradiation range of the bunched ion beam.
Before the ion implantation is interrupted, the total dose of the ion implantation process is set to be 1e15The ion beam size is about 10mA per square centimeter for implanting the wafer, and the subsequent established repairing process is that the set total dose is the residual dose calculated according to the total dose set before the ion implantation is interrupted and the implanted dose when the ion implantation is interrupted, and the ion beam size is about 10mA for implanting the wafer. And this may be applied to all single wafer type ion implantation tools.
And if the movement direction of the wafer which is interrupted to be implanted is close to the initial position before the ion implantation program is interrupted, directly establishing the repairing and beating process to carry out ion implantation on the wafer until no residual dosage exists, and stopping the ion implantation. Further, the method for stopping ion implantation includes, but is not limited to, the following methods: turning off the ion source or controlling the scanning device to move by the computer control system so that the wafer is not within an irradiation range of the bunched ion beam.
Specifically, as shown in fig. 3, if the position of the wafer 200 whose implantation is interrupted is located above the ion beam 100 and is far from the initial position before the ion implantation process is interrupted, the ion implantation process is interrupted when the wafer moves towards the initial position, and at this time, the make-up process is directly established to implant ions into the wafer 200, because the interruption occurs during the movement towards the initial position, the lower half of the wafer 200 is implanted with ions first, and the upper half is not implanted with ions yet, and at this time, when the wafer 200 is implanted with ions after the make-up process is established, the computer system controls the target table with the wafer 200 to recover from the interrupted position to the initial position when no ion implantation is performed, and then starts to perform ion implantation, that is, the target table drives the wafer 200 to start from the initial position, the ion beam 100 is moved away from the initial position and then vertically reciprocated along the vertical direction (Y axis in fig. 3) to perform vertical scanning until no residual dose is left (the preset ion implantation process is completed), and the ion implantation is stopped. It can be seen from this that, when the moving direction of the wafer 200 is close to the initial position, the padding process can be directly established, without rotating it by 180 degrees, after the ion implantation is performed on the wafer 200 from the initial position, it will implant a portion of the wafer that has not been implanted (or a portion that needs to be implanted repeatedly but is not implanted in a corresponding number of times that is interrupted before the implantation is completed, for example, in the process of the second ion implantation, an ion implantation procedure is interrupted, and at this time, the portion of the wafer refers to a region that has been implanted once), which solves the problem in the prior art that the portion of the wafer that has been implanted is over-implanted and the portion of the wafer that has not been implanted is also implanted correspondingly less implanted due to the manual padding process establishment, so that the resistance values adjusted by the ion implantation process are different and the uniformity is reduced, thereby causing the problem of reducing the yield of the chip.
In summary, in the rework method of the present invention, the movement direction of the wafer before the ion implantation process is interrupted is determined, and whether the movement direction of the wafer is away from the initial position before the ion implantation process is interrupted is determined, if yes, the wafer is rotated by 180 degrees, then a padding process is established to perform ion implantation on the wafer until no residual dose exists, and the ion implantation is stopped, if not, the padding process is directly established to perform ion implantation on the wafer until no residual dose exists, and the ion implantation is stopped. By adopting the method, the reworked wafer can firstly implant the part of the wafer which is not implanted with ions (which can mean the part of the wafer which is not implanted with the ions due to the interruption of the process) in the process of implanting the ions, thereby solving the problems that in the prior art, the part of the wafer which is implanted with ions is over-implanted due to the manual setting of the padding process, and the part of the wafer which is not implanted with ions is also correspondingly less implanted, so that the resistance value adjusted by the ion implantation process is different, the uniformity is reduced, and the yield of the chip is reduced.
The above description is only a preferred embodiment of the present invention, and does not limit the present invention in any way. It will be understood by those skilled in the art that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. A rework method of an ion implantation machine is characterized by comprising the following steps:
step S1, determining the movement (moving) direction of the wafer before the ion implantation process is interrupted;
step S2, determining whether the moving direction of the wafer is far from the initial position before the implantation procedure is interrupted, if yes, entering step S2.1, and if no, entering step S2.2;
s2.1, rotating the wafer by 180 degrees, and entering the step S2.2;
and S2.2, establishing a repairing process to carry out ion implantation on the wafer until no residual dosage exists, and stopping the ion implantation.
2. A rework method of an ion implantation system as recited in claim 1, wherein,
the established remedial process comprises the following steps: and taking the total dose as the residual implantation dose when the ion implantation program is interrupted, and carrying out ion implantation on the wafer by using the current value of the ion beam when the ion implantation program is interrupted.
3. The method of any of claims 1-2, wherein the method is suitable for a single wafer type ion implanter.
4. A method of rework of an ion implantation system as recited in claim 3, wherein the single wafer type ion implantation system comprises:
the device comprises an ion source, an extraction device, an ion analyzer, a linear accelerator, a silicon wafer transmission system, a terminal platform for loading and unloading a silicon wafer of a vacuum lock, a diagonal device, a scanning device and a computer control system;
the ion source is used for ionizing impurity source substances to generate ions;
the extraction device is used for extracting positive ions generated by the ion source to form an ion beam;
the ion analyzer is used for separating various impurities in the ion beam to obtain the required impurity ion beam;
the linear accelerator is used for accelerating and bunching the impurity ion beam and introducing the impurity ion beam to the scanning device;
the silicon wafer transmission system is used for transmitting the wafer to be subjected to ion implantation into the vacuum lock;
the terminal station is used for transmitting the wafer to be subjected to ion implantation in the vacuum lock into the diagonal device;
the angle aligning device is used for adjusting the angle of the wafer to be subjected to ion implantation and transmitting the wafer to the scanning device;
the computer control system is used for controlling the whole ion implantation process according to the preset ion implantation process to obtain the state and the information of the ion implantation device.
5. A rework method of an ion implantation system as recited in claim 4, wherein,
the scanning device further comprises a fixed seat, a vertical scanning mechanism which is arranged on the fixed seat and can vertically move up and down along the fixed seat, and a target table which is arranged on the vertical scanning mechanism and can vertically move up and down along the vertical scanning mechanism and is used for clamping a wafer to be subjected to ion implantation, wherein the target table can also adjust the inclination of the wafer so as to correct the implantation angle of the bunched impurity ion beam.
6. A rework method of an ion implantation system as recited in claim 5, wherein,
when the wafer is subjected to ion implantation, the wafer starts from an initial position and is far away from the initial position and close to the bunched ion beam, when an ion implantation program is interrupted, the wafer is rotated by 180 degrees, the computer system establishes a make-up process, the target table with the wafer is controlled to recover to the initial position from the interrupted position, and then the ion implantation is started;
and the target table drives the wafer to start from an initial position, the wafer far away from the initial position passes through the ion beam, and then the wafer reciprocates up and down along the vertical direction to realize vertical scanning until no residual dose exists, and the ion implantation is stopped.
7. A rework method of an ion implantation system as recited in claim 5, wherein,
when the wafer moves close to the initial position before the ion implantation program is interrupted, the computer system directly establishes a make-up process, controls the target platform with the wafer to recover from the interrupted position to the initial position, and then starts to perform ion implantation;
and the target table drives the wafer to start from an initial position, the wafer far away from the initial position passes through the ion beam, and then the wafer reciprocates up and down along the vertical direction to realize vertical scanning until no residual dose exists, and the ion implantation is stopped.
8. The method of claim 6, wherein the wafer is rotated 180 degrees by programming the single-wafer ion implanter to rotate the angle-of-rotation device using the computer control system.
9. The method as claimed in claim 8, wherein the angle-adjusting device comprises an infrared device, and the infrared device is used to find out the missing angle inherent in the wafer to be ion implanted for positioning, and then the wafer is rotated by 180 degrees to adjust the angle by using the original point.
10. The method of claim 9, wherein stopping the ion implantation is performed by turning off the ion source or controlling the scanning device to move by the computer control system such that the wafer is not within the irradiation range of the bunched ion beam.
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