CN111137839A - Three-dimensional wafer-level package structure for in-plane motion MEMS devices - Google Patents
Three-dimensional wafer-level package structure for in-plane motion MEMS devices Download PDFInfo
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- CN111137839A CN111137839A CN202010036925.7A CN202010036925A CN111137839A CN 111137839 A CN111137839 A CN 111137839A CN 202010036925 A CN202010036925 A CN 202010036925A CN 111137839 A CN111137839 A CN 111137839A
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- packaging
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- cover substrate
- dimensional
- plane motion
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- 238000004806 packaging method and process Methods 0.000 claims abstract description 46
- 238000007789 sealing Methods 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 32
- 238000009713 electroplating Methods 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 5
- 238000005538 encapsulation Methods 0.000 abstract 2
- 238000005516 engineering process Methods 0.000 description 6
- 239000002346 layers by function Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000708 deep reactive-ion etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/007—Interconnections between the MEMS and external electrical signals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Micromachines (AREA)
Abstract
本发明涉及一种用于面内运动式微机电系统器件的三维圆片级封装结构，属于微机电系统封装技术领域。该封装结构包括封装微机电系统器件与封盖层两层结构，两层结构键合在一起形成密封的封装结构。在此封装结构中，利用一层金属凸点结构，同时起到密封、机械支撑以及电学连接的作用，且本发明中封装结构的封盖无需加工空腔，可以简化加工工艺。本发明提出的封装结构采用了垂直引线的方式，缩短了连接线长度，便于减小封装体积。与已有技术中的其他形式三维封装相比，本发明利用一层金属凸点结构在构成密封圈结构的同时实现电学连接与机械支撑，且无需在封盖刻蚀深腔结构，可以简单有效地实现器件的三维封装。
The invention relates to a three-dimensional wafer-level packaging structure for an in-plane motion type micro-electromechanical system device, and belongs to the technical field of micro-electromechanical system packaging. The encapsulation structure includes a two-layer structure of encapsulating a microelectromechanical system device and a capping layer, and the two-layer structures are bonded together to form a sealed encapsulation structure. In this package structure, a layer of metal bump structure is used to simultaneously play the roles of sealing, mechanical support and electrical connection, and the cover of the package structure in the present invention does not need to process a cavity, which can simplify the process. The packaging structure proposed by the present invention adopts the vertical lead mode, which shortens the length of the connecting wire and facilitates the reduction of the packaging volume. Compared with other forms of three-dimensional packaging in the prior art, the present invention utilizes a layer of metal bump structure to achieve electrical connection and mechanical support while forming the sealing ring structure, and does not need to etch the deep cavity structure in the cover, which is simple and effective. three-dimensional packaging of devices.
Description
Technical Field
The invention relates to a three-dimensional wafer level packaging structure for an in-plane motion type micro electro mechanical system device, and belongs to the technical field of micro electro mechanical system packaging.
Background
Micro Electro-Mechanical Systems (MEMS) technology is a new technology developed on the basis of integrated circuits, and movable Mechanical parts are introduced on the basis of integrated circuits. Based on the technology, various sensors or actuators can be developed, and the method has wide application prospects in the fields of aerospace, automotive electronics, biomedical treatment, communication and the like.
The packaging of the MEMS device is an important part in the MEMS production process, and the packaging is not only used to isolate the device from the external environment, protect the device from mechanical impact, gas corrosion, radio frequency interference, etc., but also used to achieve the connection of internal and external signals. The MEMS packaging technology with high efficiency, high reliability and low cost can push MEMS devices to further industrialization. Wafer level packaging is an efficient and reliable packaging mode, processes such as sealing, interconnection and the like are carried out in advance to a wafer stage, and then scribing is carried out. And the three-dimensional packaging based on the substrate punching technology has shorter connecting lines, so that the performance of the chip can be improved while the packaging structure is reduced. Wafer level three-dimensional packaging is therefore a major development in the packaging of MEMS devices.
The in-plane motion type micro device is an MEMS device manufactured by using a micro processing technology, a microstructure is processed on a silicon wafer through the technologies of photoetching, deep reactive ion etching and the like, and the silicon wafer and a glass substrate are bonded together through anodic bonding. The usual direction of movement of the movable parts of the device is parallel to the plane of the wafer. The prior chinese patent CN 207973508U discloses a MEMS wafer level package structure, which bonds a cap layer with a deep cavity to the surface of a wafer with a MEMS structure, accommodates the MEMS structure in the deep cavity, completes the processing of a connection wire by wire bonding or electroplating, and completes the package by using a resin coating structure. The method provides a three-dimensional wafer level packaging idea, but the processing of the connecting wire is difficult, a deep cavity needs to be etched on the sealing cover, and the process flow is complex.
Disclosure of Invention
The invention aims to provide a three-dimensional wafer level packaging structure for an in-plane motion type micro-electro-mechanical system device, which is used for solving the problems of complex process and poor universality in the existing MEMS packaging, and has simple packaging process and certain universality.
The invention provides a three-dimensional wafer level packaging structure for an in-plane motion type micro electro mechanical system device, which comprises a micro electro mechanical system device to be packaged, a sealing ring, an electric connection point, a supporting point, a sealing cover substrate, a vertical interconnection structure and a packaging electrode, wherein the sealing ring is arranged on the sealing cover substrate; the sealing cover substrate is provided with a through hole, the through hole is filled with a conductive material to form a vertical interconnection structure, a plurality of packaging electrodes are electroplated on the upper surface of the sealing cover substrate at positions corresponding to the vertical interconnection structure, a sealing ring, a plurality of electric connection points and a plurality of supporting points are processed on the lower surface of the sealing cover substrate by an electroplating method, and the positions of the electric connection points correspond to the vertical interconnection structure; the cover substrate is relatively fixed with the MEMS device to be packaged through metal bonding.
The invention relates to a three-dimensional wafer level packaging structure for an in-plane motion type micro electro mechanical system device, which is used for carrying out three-dimensional wafer level packaging on the in-plane motion type micro electro mechanical system device. In the packaging structure, a layer of metal bump structure is utilized to play roles of sealing, mechanical supporting and electrical connection, besides, a cavity structure does not need to be processed on a sealing cover part of the package, and a reliable packaging structure can be processed by using a simple process. The packaging structure provided by the invention adopts a vertical lead mode, so that the length of a connecting line is shortened, and the packaging volume is convenient to reduce. Compared with other forms of three-dimensional packaging in the prior art, the invention utilizes a layer of metal bump structure to realize electrical connection and mechanical support while forming the sealing ring structure, and a deep cavity structure does not need to be etched on the sealing cover, so that the three-dimensional packaging of the device can be simply and effectively realized.
Drawings
Fig. 1 is a schematic structural diagram of a three-dimensional wafer level package structure for an in-plane motion mems device according to the present invention.
Fig. 2 is a diagram of an application example of the package structure of the present invention.
In fig. 1 and 2, 1 is a mems device to be packaged, 11 is a substrate, 12 is a functional layer of the mems device to be packaged, 13 is a device electrode, 2 is a seal ring, 3 is an electrical connection point, 4 is a support point, 5 is a capping substrate, 6 is a vertical interconnect structure, and 7 is a packaging electrode.
Detailed Description
The structure of the three-dimensional wafer level packaging structure for the in-plane motion type micro electro mechanical system device is shown in figure 1, and the three-dimensional wafer level packaging structure comprises a micro electro mechanical system device 1 to be packaged, a sealing ring 2, an electric connection point 3, a supporting point 4, a cover substrate 5, a vertical interconnection structure 6 and a packaging electrode 7; the sealing cover substrate 5 is provided with a through hole, the through hole is filled with a conductive material to form a vertical interconnection structure 6, the upper surface of the sealing cover substrate 5 is plated with a plurality of packaging electrodes 7 at positions corresponding to the vertical interconnection structure 6, the lower surface of the sealing cover substrate 5 is processed with a sealing ring 2, a plurality of electric connection points 3 and a plurality of supporting points 4 by an electroplating method, and the positions of the electric connection points 3 correspond to the vertical interconnection structure 6; the cover substrate 5 is fixed relative to the mems device 1 to be packaged by metal bonding.
The following detailed description of the embodiments of the method of the present invention is provided in conjunction with the drawings, in which:
fig. 2 is a diagram showing an application example of the packaging structure of the present invention, in fig. 2, a to-be-packaged mems device 1 is composed of a substrate 11, a functional layer 12 of the to-be-packaged mems device, and a device electrode 13, where the substrate 11 needs to be prepared first, and the substrate 11 may be made of silicon, glass, or the like; as an example, the material of the substrate 11 is glass; the functional layer 12 of the micro electro mechanical system device to be packaged is made of silicon and is obtained by processing through the process steps of photoetching, etching, anodic bonding and the like; the device electrode 13 is processed above the functional layer 12 of the mems device to be packaged, and the device electrode 13 is made of copper by physical vapor deposition.
Processing a through hole on the cover substrate 5, wherein the material of the cover substrate 5 may be any one of silicon, glass or polymer material, as an example, the material of the cover substrate 5 is glass, and the mode of processing the through hole is laser processing; filling the through holes with a conductive material, wherein the conductive material is copper, and the copper is filled into the through holes through an electroplating process to process a plurality of vertical interconnection structures 6; processing a plurality of packaging electrodes 7 above the cover substrate 5, wherein the number and the positions of the packaging electrodes 7 correspond to those of the vertical interconnection structures 6, and as an embodiment, the packaging electrodes 7 are prepared by an electroplating process; processing a sealing ring 2, a plurality of electric connecting points 3 and a plurality of supporting points 4 below a cover substrate 5, wherein the sealing ring 2, the electric connecting points 3 and the supporting points 4 are made of copper and tin and are manufactured through an electroplating process; the sealing ring 2 is used for ensuring the air tightness of the packaging structure, the number and the positions of the electric connection points 3 correspond to those of the vertical interconnection structures 6, and the number of the supporting points 4 is not limited and is arranged at the position needing mechanical support.
And fixing a cover substrate 5 which is processed with a sealing ring 2, a plurality of electric connection points 3, a plurality of supporting points 4, a plurality of vertical interconnection structures 6 and a plurality of packaging electrodes 7 relatively to the MEMS device 1 to be packaged through metal bonding to complete packaging.
In this embodiment, the device wafer and the cap are processed in the above manner, and finally, the final package structure is processed by wafer bonding, as shown in fig. 2. In this embodiment, the functional layer 12 of the mems device to be packaged is protected between the capping substrate 5 and the substrate 1, wherein the sealing ring 2 for sealing ensures the air tightness of the package structure; the electrical connection points 3 for electrical connection and the vertical interconnection structure 6 ensure that the functional layer 12 of the mems device to be packaged can be electrically connected to the outside of the package; the supporting points 4 for mechanical support play a role of auxiliary support, and the structural strength of the package is ensured.
Claims (1)
1. A three-dimensional wafer level packaging structure for an in-plane motion type micro electro mechanical system device is characterized by comprising a micro electro mechanical system device to be packaged, a sealing ring, an electric connection point, a supporting point, a sealing cover substrate, a vertical interconnection structure and a packaging electrode; the sealing cover substrate is provided with a through hole, the through hole is filled with a conductive material to form a vertical interconnection structure, a plurality of packaging electrodes are electroplated on the upper surface of the sealing cover substrate at positions corresponding to the vertical interconnection structure, a sealing ring, a plurality of electric connection points and a plurality of supporting points are processed on the lower surface of the sealing cover substrate by an electroplating method, and the positions of the electric connection points correspond to the vertical interconnection structure; the cover substrate is relatively fixed with the MEMS device to be packaged through metal bonding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010036925.7A CN111137839A (en) | 2020-01-14 | 2020-01-14 | Three-dimensional wafer-level package structure for in-plane motion MEMS devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010036925.7A CN111137839A (en) | 2020-01-14 | 2020-01-14 | Three-dimensional wafer-level package structure for in-plane motion MEMS devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111137839A true CN111137839A (en) | 2020-05-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010036925.7A Pending CN111137839A (en) | 2020-01-14 | 2020-01-14 | Three-dimensional wafer-level package structure for in-plane motion MEMS devices |
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| Country | Link |
|---|---|
| CN (1) | CN111137839A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030160310A1 (en) * | 2002-02-26 | 2003-08-28 | Langhorn Jason Barnabas | Micro-machined semiconductor package |
| US20040077154A1 (en) * | 2002-10-17 | 2004-04-22 | Ranganathan Nagarajan | Wafer-level package for micro-electro-mechanical systems |
| US20060141650A1 (en) * | 2004-12-27 | 2006-06-29 | Samsung Electronics Co., Ltd. | MEMS device package and method for manufacturing the same |
| US20060141652A1 (en) * | 2004-12-27 | 2006-06-29 | Samsung Electronics Co., Ltd. | MEMS device package and method for manufacturing the same |
| US20090212407A1 (en) * | 2005-05-12 | 2009-08-27 | Foster Ron B | Infinitely Stackable Interconnect Device and Method |
| CN101638212A (en) * | 2009-09-08 | 2010-02-03 | 华中科技大学 | Wafer-level vacuum encapsulation wire interconnecting structure of micro electro mechanical system and manufacturing method thereof |
-
2020
- 2020-01-14 CN CN202010036925.7A patent/CN111137839A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030160310A1 (en) * | 2002-02-26 | 2003-08-28 | Langhorn Jason Barnabas | Micro-machined semiconductor package |
| US20040077154A1 (en) * | 2002-10-17 | 2004-04-22 | Ranganathan Nagarajan | Wafer-level package for micro-electro-mechanical systems |
| US20060141650A1 (en) * | 2004-12-27 | 2006-06-29 | Samsung Electronics Co., Ltd. | MEMS device package and method for manufacturing the same |
| US20060141652A1 (en) * | 2004-12-27 | 2006-06-29 | Samsung Electronics Co., Ltd. | MEMS device package and method for manufacturing the same |
| US20090212407A1 (en) * | 2005-05-12 | 2009-08-27 | Foster Ron B | Infinitely Stackable Interconnect Device and Method |
| CN101638212A (en) * | 2009-09-08 | 2010-02-03 | 华中科技大学 | Wafer-level vacuum encapsulation wire interconnecting structure of micro electro mechanical system and manufacturing method thereof |
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Application publication date: 20200512 |