CN108074776B - normally-closed pressure switch and preparation method thereof - Google Patents
normally-closed pressure switch and preparation method thereof Download PDFInfo
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- CN108074776B CN108074776B CN201610998332.2A CN201610998332A CN108074776B CN 108074776 B CN108074776 B CN 108074776B CN 201610998332 A CN201610998332 A CN 201610998332A CN 108074776 B CN108074776 B CN 108074776B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000001465 metallisation Methods 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 239000012212 insulator Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000005516 engineering process Methods 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- 238000005553 drilling Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 239000004033 plastic Substances 0.000 claims description 2
- 239000005297 pyrex Substances 0.000 claims description 2
- 238000003466 welding Methods 0.000 claims description 2
- 238000005260 corrosion Methods 0.000 claims 1
- 230000007797 corrosion Effects 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H35/00—Switches operated by change of a physical condition
- H01H35/24—Switches operated by change of fluid pressure, by fluid pressure waves, or by change of fluid flow
- H01H35/245—Switches operated by change of fluid pressure, by fluid pressure waves, or by change of fluid flow actuated by the deformation of a body of elastic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H11/00—Apparatus or processes specially adapted for the manufacture of electric switches
Landscapes
- Physics & Mathematics (AREA)
- Fluid Mechanics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Micromachines (AREA)
- Push-Button Switches (AREA)
Abstract
The invention discloses a normally closed pressure switch and a preparation method thereof, wherein the normally closed pressure switch comprises: the electrode assembly comprises an upper electrode body, a lower electrode body, a switching assembly, a base, a cable and a pipe cap; the upper electrode body comprises an upper electrode substrate, and metallization layers are arranged on the upper surface and the lower surface of the upper electrode substrate; the upper electrode substrate is provided with an upper bonding surface; the upper electrode body is also provided with a pressure guide hole; the lower electrode body comprises a lower electrode substrate; the lower electrode base body comprises a fixed outer frame, a movable contact body and an annular elastic beam; metal electrode layers are arranged on the movable contact body and the fixed outer frame; the upper end surface of the fixed outer frame is provided with a lower bonding surface; the upper electrode body and the lower electrode body form a switch core body; the switch core body and the switching component are welded into a whole; the switching component is fixed on the base; the base is provided with a cable through hole; the cable is respectively electrically connected with the upper electrode body and the lower electrode body; the pipe cap is arranged on the base, and a pressure guiding opening is arranged on the pipe cap. The invention has the advantages of small volume, low cost and high consistency, and can be integrated with a subsequent circuit.
Description
Technical Field
the invention relates to the technical field of pressure switch devices, in particular to a normally closed pressure switch and a preparation method of the normally closed pressure switch based on an MEMS (micro-electromechanical system) technology.
Background
The pressure switch device is widely applied to the fields of industry, agriculture, scientific research, architecture, aerospace, military and the like. However, most of the conventional pressure switches are mechanical structures, and have the problems of large volume, low mass production, poor consistency and difficulty in integration with subsequent circuits, so how to develop a novel pressure switch device, reduce the volume, reduce the cost and improve the consistency, so that the novel pressure switch device can be integrated with the subsequent circuits. Are directions that need to be studied by a person skilled in the art.
Disclosure of Invention
The invention aims to provide a normally closed pressure switch, which is used for meeting the requirements of reducing the volume, reducing the cost, improving the consistency and being capable of being integrated with a subsequent circuit in the market.
the specific technical scheme adopted is as follows:
A normally closed pressure switch, comprising: the electrode assembly comprises an upper electrode body, a lower electrode body, a switching assembly, a base, a cable and a pipe cap; the upper electrode body comprises an upper electrode substrate, and metallization layers are arranged on the upper surface and the lower surface of the upper electrode substrate; the lower surface of the upper electrode substrate is also provided with an upper bonding surface; the upper electrode body is also provided with a pressure guiding hole which penetrates through the upper electrode substrate, the metallization layer and the inner wall metallization; the lower electrode body includes a lower electrode base body; the lower electrode substrate comprises a fixed outer frame, a movable contact body and an annular elastic beam; the annular elastic beam is arranged between the fixed outer frame and the movable contact body; metal electrode layers are arranged on the upper end face of the movable contact body and the lower end face of the fixed outer frame; the upper end surface of the fixed outer frame is provided with a lower bonding surface; the upper electrode body and the lower electrode body form a switch core body through the bonding of the upper bonding surface and the lower bonding surface; the switch core body and the switching assembly are welded into a whole; the switching assembly is fixed on the base; the base is provided with a cable through hole; the cable extends into the cable through hole and is respectively and electrically connected with the upper electrode body and the lower electrode body; the pipe cap is arranged on the base, and a pressure guiding opening is formed in the pipe cap.
By adopting the technical scheme: the structure of the lower electrode body contains prestress, and the pressure switch is guaranteed to be a normally closed pressure switch. The magnitude of the prestress can be changed by adjusting various parameters of the lower electrode body, so that normally closed pressure switches with different working pressures can be designed. The switch core body is internally provided with no movable part, so that the switch core body has the advantages of small volume, reliable work and long service life; can be produced in large scale by MEMS technology, and reduces cost.
Preferably, in the normally closed pressure switch: an air duct is arranged in the cable.
By adopting the technical scheme: for a small-range normally-closed pressure switch, the effect of improving the precision of the device can be achieved by arranging the air guide pipe in the cable.
more preferably, in the normally closed pressure switch: the switching assembly comprises a support body, an insulator, an insulating layer, a conductive column and a flow guide hole; the insulating layer is arranged on the upper surface of the supporting body; the insulator is arranged on the insulating layer; the conductive column sequentially penetrates through the supporting body and the insulating layer; the flow guide holes sequentially penetrate through the supporting body and the insulating layer; and the metallization layer and the metal electrode layer are both connected with inner leads, and the inner leads penetrate through the conductive columns to be connected to the cable.
Further preferably, in the normally closed pressure switch: the metallization layer and the metal electrode layer are all made of any one of an aluminum layer, a copper layer, a silver layer, a gold layer and a platinum layer.
In another preferred embodiment, in the normally closed pressure switch: the metallization layer and the metal electrode layer are formed by overlapping any several layers of an aluminum layer, a copper layer, a silver layer, a gold layer and a platinum layer.
Still more preferably, in the normally closed pressure switch: a concave cavity is arranged in the base; the cable through hole penetrates through the concave cavity; and a sealing ring is arranged in the concave cavity.
by adopting the technical scheme: the sealing ring is used for fixing and positioning the cable extending into the cable through hole.
The invention also discloses a preparation method of the normally closed pressure switch, which is used for preparing the normally closed pressure switch.
the method specifically comprises the following steps:
S1: forming metallization layers on the upper surface and the lower surface of the upper electrode substrate in an evaporation mode;
S2: forming a specified pattern on the metallization layer in a conventional etching mode, and manufacturing a pressure leading hole in the center of the upper electrode substrate;
s3: metallizing the inside of the pressure-leading hole by a hole-plating process to electrically conduct the metallized layers on the upper and lower surfaces of the upper electrode base to each other;
S4: processing a fixed outer frame, a movable contact body and an annular elastic beam on a lower electrode substrate by using an MEMS technology; the annular elastic beam is arranged between the fixed outer frame and the movable contact body;
S5: forming metal electrode layers on the upper end surface of the movable contact body and the lower end surface of the fixed outer frame in a vapor deposition mode;
S6: applying prestress on the upper electrode substrate and the lower electrode substrate, so that an upper bonding surface positioned on the lower surface of the upper electrode substrate and a lower bonding surface positioned on the upper surface of the lower electrode substrate are bonded together, and the upper electrode body and the lower electrode body form a switch core body;
S7: welding the switch core body and the switching assembly to form a switch component;
s8: fixing the switch component on a base, leading in a cable from a cable through hole on the base, and respectively connecting the cable with an upper electrode body and a lower electrode body through an inner lead;
s9: the pipe cap is fixedly connected with the base to form a complete normally closed pressure switch.
preferably, in the method for manufacturing a normally closed pressure switch, the method includes: the upper electrode substrate is made of any one of metal, plastic, silicon single crystal, silicon polycrystal, ceramic and PYREX glass; the lower electrode substrate is made of high-doped N-type monocrystalline silicon with a (100) crystal face.
more preferably, in the method for manufacturing a normally closed pressure switch, the method further comprises: in step S2, a pressure-guiding hole is formed in the center of the upper electrode substrate by etching, laser drilling, or ultrasonic drilling.
Compared with the prior art, the invention can design models aiming at different working pressures. The device has the advantages of small volume, reliable work and long service life; can be produced in large scale by MEMS technology, and reduces cost.
drawings
The invention will be described in further detail with reference to the following detailed description and accompanying drawings:
FIG. 1 is a schematic structural view of a product of the present invention;
fig. 2 is a schematic view of the structure of the upper electrode body in fig. 1;
fig. 3 is a schematic view of the structure of the lower electrode body in fig. 1;
fig. 4 is a schematic view of the structure of fig. 1.
The correspondence between each reference numeral and the part name is as follows:
1. An upper electrode body; 2. a lower electrode body; 3. a switching component; 4. a base; 5. a cable; 6. a pipe cap; 7. an inner lead; 11. an upper electrode base; 12. a metallization layer; 13. an upper bonding surface; 14. a pressure guide hole; 21. an upper electrode base; 211. fixing the outer frame; 212. a movable contact body; 213. an annular elastic beam; 22. a metal electrode layer; 23. a lower bonding surface; 31. a support body; 32. an insulator; 33. an insulating layer; 34. a conductive post; 35. a flow guide hole; 41. a cable through hole; 42. a concave cavity; 43. a seal ring; 51. an air duct; 61. and a pressure guide port.
Detailed Description
in order to more clearly illustrate the technical solution of the present invention, the present invention will be further described with reference to the accompanying drawings.
Example 1 of the invention as shown in FIGS. 1-4:
A normally closed pressure switch, comprising: the electrode assembly comprises an upper electrode body 1, a lower electrode body 2, a switching assembly 3, a base 4, a cable 5 and a pipe cap 6.
As shown in fig. 2: the upper electrode body 1 comprises an upper electrode substrate 11, and metalized layers 12 are arranged on the upper surface and the lower surface of the upper electrode substrate 11; the lower surface of the upper electrode substrate 11 is also provided with an upper bonding surface 13; the upper electrode body 1 is also provided with a pressure guiding hole 14 penetrating through the upper electrode base body 11 and the metallization layer 12 and having a metallized inner wall.
The preparation process comprises the following steps: forming a metallization layer 12 on the upper surface and the lower surface of the upper electrode substrate 11 by an evaporation method, performing conventional etching on the metallization layer 12 to form a required pattern, forming a pressure leading hole 14 in a laser punching mode at the center position of the upper electrode substrate 11, and then metalizing the inside of the pressure leading hole 14 by a hole plating process to realize metal connection between the upper surface and the lower surface.
As shown in fig. 3: the lower electrode body 2 includes a lower electrode base body 21; the lower electrode base body 21 comprises a fixed outer frame 211, a movable contact body 212 and an annular elastic beam 213; the annular elastic beam 213 is arranged between the fixed outer frame 211 and the movable contact 212; the upper end surface of the movable contact body 212 and the lower end surface of the fixed outer frame 211 are provided with metal electrode layers 22; the upper end surface of the fixed outer frame 211 is provided with a lower bonding surface 23.
The preparation process comprises the following steps: taking a double-side polished N-type heavily doped monocrystalline silicon wafer with the thickness of 200-1000 mu m as a lower electrode substrate 21, and generating a thermal silicon oxide layer with the thickness of 0.5-1 mu m on the upper surface of the lower electrode substrateAnd then depositing thereon a layer having a thickness ofa silicon nitride layer of (a); etching the silicon nitride layer by a conventional photoetching process, then etching the thermal silicon oxide layer positioned below the silicon nitride layer, and etching the monocrystalline silicon by a wet method or dry method conventional etching method to form a circular or square unequal-height structure with a hard center; on the structure, a metal electrode layer 22 is formed by a conventional mask method or a metal stripping method, and then alloy is performed to complete the manufacture of the lower electrode body 2.
as shown in fig. 1: in practice, the upper electrode body 1 and the lower electrode body 2 are placed in a mold, and a given pressure, temperature and dc voltage are applied to the fixed outer frame 211, so that electrostatic bonding of the upper electrode body 1 and the lower electrode body 2 is completed, and a switch core is formed. The switch core body and the switching component 3 are welded into a whole; the adapter component 3 is fixed on the base 4; the base 4 is provided with a cable through hole 41; a concave cavity 42 is arranged in the base 4; the cable through hole 41 penetrates through the cavity 42; a sealing ring 43 is arranged in the cavity 42. The pipe cap 6 is arranged on the base 4, and a pressure guiding opening 61 is arranged on the pipe cap 6. An air duct 51 is provided in the cable 5.
as shown in fig. 4: the switching assembly 3 comprises a support body 31, an insulator 32, an insulating layer 33, a conductive column 34 and a diversion hole 35; the insulating layer 33 is arranged on the upper surface of the supporting body 31; the insulator 32 is arranged on the insulating layer 33; the conductive column 34 sequentially penetrates through the supporting body 31 and the insulating layer 33; the diversion holes 35 sequentially penetrate through the support body 31 and the insulating layer 33; the metallization layer 12 and the metal electrode layer 22 are respectively connected with an inner lead 7, and the inner lead 7 is connected to the cable 5 through the conductive pillar 34. The support body 31 may be made of metal or a strong non-metal material.
In practice: the normally closed pressure switch is hermetically arranged on a tested system through a pipe cap 6, and the outer end of a cable 5 is connected with a control system. When the pressure switch works, the two electrodes of the normally closed pressure switch are in a closed state under the action of elastic force, and the circuit is switched on. When the gas flow enters from the pressure introduction port 61, pressure is applied to the surface of the movable contact body 212 on the lower electrode body 2 through the pressure introduction hole 14, the pressure partially cancels the elastic force, and when the entering pressure increases beyond the elastic force, the annular elastic beam 213 on the lower electrode body 2 is deformed by one step, so that the metal electrode layer 22 on the movable contact body 212 is separated from the metallization layer 12 on the upper electrode body 1. The normally closed pressure switch is turned from on to off at this time. When the pressure of the air flow entering from the pressure introducing hole 14 is gradually reduced, especially when the pressure is smaller than the elastic force, the elastic beam 213 gradually returns to its initial state under the action of the elastic force, so that the normally closed pressure switch returns to the normal state of the on state from the off state.
When the movable contact 212 moves downwards, the air below the movable contact 212 is released to the outside through the diversion hole 35 and the air duct 51, and no resistance is generated to the downward movement of the electrode body movable contact. For a wide range device, the resistance due to air compression below the movable contact 212 is much less than the measured pressure, and its effect is negligible. By designing different parameters, the working ranges of the normally closed switch with different ranges can be obtained.
the above description is only an embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. The protection scope of the present invention is subject to the protection scope of the claims.
Claims (9)
1. A normally closed pressure switch, comprising: the electrode assembly comprises an upper electrode body (1), a lower electrode body (2), a switching assembly (3), a base (4), a cable (5) and a pipe cap (6);
the upper electrode body (1) comprises an upper electrode base body (11), and metallization layers (12) are arranged on the upper surface and the lower surface of the upper electrode base body (11); the lower surface of the upper electrode substrate (11) is also provided with an upper bonding surface (13); the upper electrode body (1) is also provided with a pressure guiding hole (14) which penetrates through the upper electrode base body (11) and the metallization layer (12) and has a metallized inner wall;
The lower electrode body (2) comprises a lower electrode base body (21); the lower electrode base body (21) comprises a fixed outer frame (211), a movable contact body (212) and an annular elastic beam (213); the annular elastic beam (213) is arranged between the fixed outer frame (211) and the movable contact body (212); the upper end surface of the movable contact body (212) and the lower end surface of the fixed outer frame (211) are provided with metal electrode layers (22); the upper end surface of the fixed outer frame (211) is provided with a lower bonding surface (23);
the upper electrode body (1) and the lower electrode body (2) form a switch core body through the bonding of an upper bonding surface (13) and a lower bonding surface (23); the switch core body and the switching component (3) are welded into a whole; the switching component (3) is fixed on the base (4); a cable through hole (41) is formed in the base (4); the cable (5) extends into the cable through hole (41) and is respectively and electrically connected with the upper electrode body (1) and the lower electrode body (2); the pipe cap (6) is arranged on the base (4), and a pressure guiding opening (61) is formed in the pipe cap (6).
2. A normally closed pressure switch according to claim 1, wherein: an air duct (51) is arranged in the cable (5).
3. A normally closed pressure switch according to claim 1 or 2, wherein: the switching assembly (3) comprises a support body (31), an insulator (32), an insulating layer (33), a conductive column (34) and a flow guide hole (35); the insulating layer (33) is arranged on the upper surface of the supporting body (31); the insulator (32) is arranged on the insulating layer (33); the conductive column (34) penetrates through the support body (31) and the insulating layer (33) in sequence; the diversion holes (35) sequentially penetrate through the support body (31) and the insulating layer (33); the metallization layer (12) and the metal electrode layer (22) are both connected with an inner lead (7), and the inner lead (7) is connected to the cable (5) through the conductive column (34).
4. A normally closed pressure switch according to claim 3, wherein: the metallization layer (12) and the metal electrode layer (22) are made of any one of an aluminum layer, a copper layer, a silver layer, a gold layer and a platinum layer.
5. a normally closed pressure switch according to claim 3, wherein: the metallization layer (12) and the metal electrode layer (22) are formed by overlapping any number of aluminum layers, copper layers, silver layers, gold layers and platinum layers.
6. a normally closed pressure switch according to claim 3, wherein: a concave cavity (42) is arranged in the base (4); the cable through hole (41) penetrates through the cavity (42); and a sealing ring (43) is arranged in the concave cavity (42).
7. A preparation method of a normally closed pressure switch is characterized by comprising the following steps:
S1: forming a metallization layer (12) on the upper surface and the lower surface of the upper electrode substrate (11) by vapor deposition;
s2: forming a specified pattern on the metallization layer (12) in a conventional etching mode, and manufacturing a pressure leading hole (14) in the center position of the upper electrode substrate (11);
S3: metallizing the inside of the pressure-drawing hole (14) by a hole-plating process so that the metallized layers (12) on the upper and lower surfaces of the upper electrode base (11) are electrically conducted to each other;
S4: processing a fixed outer frame (211), a movable contact body (212) and an annular elastic beam (213) on a lower electrode base body (21) by using an MEMS technology; the annular elastic beam (213) is arranged between the fixed outer frame (211) and the movable contact body (212);
S5: forming a metal electrode layer (22) on the upper end surface of the movable contact body (212) and the lower end surface of the fixed outer frame (211) in a vapor deposition mode;
S6: prestressing force is applied to the upper electrode substrate (11) and the lower electrode substrate (21), an upper bonding surface (13) positioned on the lower surface of the upper electrode substrate (11) and a lower bonding surface (23) positioned on the upper surface of the lower electrode substrate (21) are bonded together, and the upper electrode body (1) and the lower electrode body (2) form a switch core body;
s7: welding the switch core body and the switching assembly (3) to form a switch component;
S8: fixing the switch component on a base (4), leading in a cable (5) from a cable through hole (41) on the base (4), and respectively connecting the cable (5) with an upper electrode body (1) and a lower electrode body (2) through an inner lead (7);
S9: the pipe cap (6) is fixedly connected with the base (4) to form a complete normally closed pressure switch.
8. The method of claim 7, wherein the step of forming the pressure switch comprises: the upper electrode substrate (11) is made of any one of metal, plastic, silicon single crystal, silicon polycrystal, ceramic and PYREX glass; the lower electrode substrate (21) is made of highly doped N-type monocrystalline silicon with a (100) crystal plane.
9. The method of claim 7, wherein the step of forming the pressure switch comprises: in the step S2: and manufacturing a pressure guide hole (14) in the central position of the upper electrode substrate (11) by adopting a corrosion, laser drilling or ultrasonic drilling method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610998332.2A CN108074776B (en) | 2016-11-14 | 2016-11-14 | normally-closed pressure switch and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610998332.2A CN108074776B (en) | 2016-11-14 | 2016-11-14 | normally-closed pressure switch and preparation method thereof |
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| CN108074776A CN108074776A (en) | 2018-05-25 |
| CN108074776B true CN108074776B (en) | 2019-12-17 |
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| CN109859986A (en) * | 2019-01-31 | 2019-06-07 | 王伟 | A kind of single-pole double throw sensing assembly based on MEMS technology and the pressure switch containing the sensing assembly |
| CN111426424B (en) * | 2020-05-08 | 2024-12-06 | 昆山御宾电子科技有限公司 | A rotary sliding disc pressure electronic scanning valve |
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| JP4019578B2 (en) * | 1999-12-09 | 2007-12-12 | 富士電機機器制御株式会社 | Manufacturing method of capacitive pressure sensor |
| CN101964272B (en) * | 2010-07-22 | 2012-09-26 | 张谦 | Pressure switch based on micro-electromechanical system technology |
| CN102486972B (en) * | 2011-09-01 | 2014-10-22 | 中国科学院上海微系统与信息技术研究所 | Dual-channel radio-frequency MEMS (Micro Electro Mechanical System) switch and manufacturing method thereof |
| CN102494832B (en) * | 2011-11-25 | 2014-01-15 | 李策 | Micro-nano film pressure sensor based on transfer print technology and manufacture method thereof |
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