CN111048474A - Preparation process for heat dissipation package of compact IGBT module - Google Patents
Preparation process for heat dissipation package of compact IGBT module Download PDFInfo
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- CN111048474A CN111048474A CN201910805964.6A CN201910805964A CN111048474A CN 111048474 A CN111048474 A CN 111048474A CN 201910805964 A CN201910805964 A CN 201910805964A CN 111048474 A CN111048474 A CN 111048474A
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- 230000017525 heat dissipation Effects 0.000 title claims abstract description 44
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 109
- 239000000741 silica gel Substances 0.000 claims abstract description 103
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 103
- 238000004806 packaging method and process Methods 0.000 claims abstract description 14
- 230000008859 change Effects 0.000 claims description 49
- 238000009434 installation Methods 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 20
- 239000007788 liquid Substances 0.000 claims description 19
- 238000003466 welding Methods 0.000 claims description 15
- 239000002202 Polyethylene glycol Substances 0.000 claims description 11
- 229920001223 polyethylene glycol Polymers 0.000 claims description 11
- 238000004140 cleaning Methods 0.000 claims description 9
- 238000007689 inspection Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 7
- 239000000428 dust Substances 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000007605 air drying Methods 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 239000000049 pigment Substances 0.000 claims description 3
- 239000011148 porous material Substances 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims 1
- 230000008023 solidification Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 15
- 238000009413 insulation Methods 0.000 abstract description 10
- 238000004321 preservation Methods 0.000 abstract description 5
- 238000012858 packaging process Methods 0.000 abstract description 2
- 239000012071 phase Substances 0.000 description 46
- UFNIBRDIUNVOMX-UHFFFAOYSA-N 2,4'-dichlorobiphenyl Chemical compound C1=CC(Cl)=CC=C1C1=CC=CC=C1Cl UFNIBRDIUNVOMX-UHFFFAOYSA-N 0.000 description 12
- 230000007704 transition Effects 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 229920002379 silicone rubber Polymers 0.000 description 4
- 239000004945 silicone rubber Substances 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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Abstract
The invention discloses a preparation process for heat dissipation packaging of a compact IGBT module, belonging to the field of IGBT packaging process, the preparation process for heat dissipation packaging of the compact IGBT module is characterized in that the heat dissipation and insulation work of the IGBT is completed through the packaging of silica gel and cycloaliphatic gum, the heat dissipation of the compact IGBT module is realized, the heat preservation and heat dissipation effects of the silica gel are increased by doping a phase-change ball into the silica gel, when the temperature of the silica gel is overhigh, the phase-change ball is liquefied to absorb a large amount of heat, so that the temperature of the silica gel is not easy to rise too fast, the heat dissipation is assisted, the contact area between the silica gel and the phase-change ball is increased when the liquefied phase-change ball flows into a silica gel capillary micropore, the heat exchange efficiency between the silica gel and the phase-change ball is greatly increased, and when the temperature of the silica gel is greatly reduced due to the environment when the IGBT module works in a low-temperature, and preserving the heat of the working environment of the electronic element.
Description
Technical Field
The invention relates to the field of IGBT (insulated gate bipolar transistor) packaging processes, in particular to a preparation process for heat dissipation packaging of a compact IGBT module.
Background
IGBT, insulated gate bipolar transistor, it is the compound fully-controlled voltage-driven power semiconductor device that is made up of BJT (bipolar transistor) and MOS (insulated gate field effect transistor), have the advantages of both high input impedance of MOSFET and low conduction voltage drop of GTR concurrently, GTR saturation voltage is reduced, the current-carrying density is large, but the driving current is larger, MOSFET driving power is very small, the switching speed is fast, but the conduction voltage drop is large, the current-carrying density is small, IGBT has synthesized the advantages of the above two kinds of devices, the driving power is small and the saturation voltage is reduced, very suitable for being applied to the field such as alternating current motor, frequency converter, switching power supply, lighting circuit, traction drive of the converter system that the direct-current voltage is 600V and above, etc.
Along with the development of electronic technology, the circuit board and the electronic element gradually develop towards the direction of miniaturization and miniaturization, so the miniaturization of the IGBT module is gradually miniaturized along with the miniaturization of the electronic element, an IGBT composite bus bar is born from this, a large space is saved, the structure is more compact, and the IGBT composite bus bar is convenient to install, neat and attractive. For general conditions, the IGBI composite busbar can meet requirements, but for the partial IGBT busbar with overhigh working strength, heat emitted by working among a plurality of groups of IGBT modules can affect each other, if rapid heat dissipation cannot be realized, high-load working of the IGBT is easily caused, insulation packaging of the IGBT modules is easily broken down, and normal use of the IGBT is influenced.
Disclosure of Invention
1. Technical problem to be solved
Aiming at the problems in the prior art, the invention aims to provide a preparation process for heat dissipation packaging of a compact IGBT module, which can greatly reduce the load intensity of the IGBT module during high-temperature work, so that the IGBT module is not easy to break down the insulation packaging of the IGBT module when the work load of the IGBT module is too high, and the normal use of the IGBT is not easy to be influenced.
2. Technical scheme
In order to solve the above problems, the present invention adopts the following technical solutions.
The utility model provides a preparation technology that is used for heat dissipation encapsulation of compact IGBT module, includes the base plate, the upper end fixedly connected with IGBT shell and the welt of base plate, form the installation cavity between base plate and the IGBT shell, and the welt is located the installation cavity, female electrode, FRD chip and the IGBT chip of arranging of fixedly connected with in proper order from the left hand right side in the upper end of welt equal electric connection between FRD chip and IGBT chip and the welt, female one section fixedly connected with PCB board that keeps away from the welt of arranging the electrode, the intussuseption of installation cavity is filled with silica gel and cycloaliphatic gum, silica gel is located the downside of PCB board, cycloaliphatic gum is located the upside of PCB board, the upper end of IGBT shell is connected with grid, emitter and collector, grid, emitter and collector all with PCB board electric connection.
A preparation process for heat dissipation packaging of a compact IGBT module mainly comprises the following preparation processes:
s1, cleaning the base material, cleaning the surfaces of the lining plate and the PCB by using absolute ethyl alcohol, washing away impurities such as dust on the surfaces of the lining plate and the PCB, and air-drying the lining plate and the PCB;
s2, welding base materials, fixedly connecting the lining plate to the substrate, welding the bus bar electrode, the FRD chip and the IGBT chip to the specified position on the lining plate at one time, and electrically connecting the lining plate with the FRD chip and the lining plate with the IGBT chip by using conducting wires;
s3, welding the PCB, namely welding the PCB to one end of the busbar electrode, which is far away from the substrate, and properly adjusting the PCB to ensure that the PCB is parallel to the substrate and the lining plate;
s4, installing a shell, installing the IGBT shell at the upper end of the substrate, and placing the lining board and the PCB between the substrate and the IGBT shell;
s5, injecting heat dissipation glue, injecting liquid silica gel into the installation cavity through the hole on the IGBT shell until the liquid level of the silica gel is level with the upper end of the PCB, and waiting for the silica gel to be naturally cured;
s7, injecting an insulating layer, injecting liquid cycloaliphatic gum into the anzhong wall through the hole on the IGBT shell until the liquid level of the cycloaliphatic gum is flush with the inner wall of the upper end of the IGBT shell, and waiting for the cycloaliphatic gum to be naturally cured;
and S8, performing factory inspection, and performing performance inspection on the finished IGBT module before factory inspection.
The load intensity of the IGBT module during high-temperature work can be greatly reduced, the IGBT module is not prone to breakdown the insulated packaging of the IGBT module when the work load of the IGBT module is too high, and normal use of the IGBT is not prone to being influenced.
Further, it has a plurality of phase change chambeies to chisel in the silica gel, phase change chamber woollen packing is filled with a plurality of phase change balls, and the phase change ball can increase silica gel's heat dissipation and heat preservation effect, makes each component of installation intracavity be difficult for taking place to damage because of the high temperature that work produced, also makes each component be difficult for appearing unusually at low temperature work simultaneously.
Furthermore, the phase change ball is made of polyethylene glycol, the melting point of the polyethylene glycol is 64-66 ℃, the latent heat is 190J/g, and the melting point of the polyethylene glycol is matched with the working temperature of each element in the installation cavity.
Furthermore, red liquid pigment is doped in the phase change ball and used for developing the color of the polyethylene glycol, so that workers can conveniently observe the position of the polyethylene glycol.
Further, it has a plurality of silica gel capillary micropores to open the chisel on the silica gel, and silica gel capillary micropore and phase transition ball communicate mutually, and it is overheated to work at installation intracavity work element, and when silica gel failed in time the heat dissipation, the phase transition ball of phase transition intracavity packing can liquefy and absorb a large amount of heats, supplementary silica gel dispels the heat, under the effect of the silica gel capillary micropore of the phase transition ball of liquefaction, can flow in the silica gel capillary micropore, increase the area of contact between phase transition ball and the silica gel, increase the heat conduction efficiency between silica gel and the phase transition ball by a wide margin.
Further, a plurality of silica gel capillary micropores are dug on the inner wall of the IGBT shell, the silica gel capillary micropores are communicated with the installation cavity, when the component in the installation cavity breaks down to generate a strong voltage, the voltage can break down silica gel and cycloaliphatic gum to cause the silica gel and the cycloaliphatic gum to be broken, the phase change ball in the phase change cavity can be liquefied under the action of the high working temperature of the component at the moment, the gap between the broken silica gel flows out, the silica gel capillary micropores flow in under the action of the silica gel capillary micropores, the specific working condition in the installation cavity can be observed by a worker conveniently, and the part which breaks down can be found timely.
Furthermore, in the cleaning of S1 substrate, welt and PCB board need air-dry under dustless environment, make the difficult new impurity that appears in the surface of welt and PCB board, be difficult for influencing the normal work of welt and PCB board.
Further, in the welding of S2 substrate, equal fixedly connected with wire row of inserting on welt, FRD chip and the IGBT chip can insert the row through the wire and realize fast electric connection and the dismantlement between welt and FRD chip and welt and the IGBT chip.
Furthermore, silica gel and cycloaliphatic gum all need the staff to seal the hole on the IGBT shell in the natural curing process, and impurities such as dust are difficult to enter the installation cavity through the hole of the IGBT shell, so that the silica gel and the cycloaliphatic gum are difficult to pollute, and the heat dissipation effect of the silica gel and the insulation effect of the cycloaliphatic gum are difficult to influence.
Furthermore, the lining plate, the busbar electrode, the FRD chip, the IGBT chip, the PCB, the grid electrode, the emitter and the collector are required to be tested before installation, and the failure rate of the assembled IGBT is reduced.
3. Advantageous effects
Compared with the prior art, the invention has the advantages that:
the scheme completes the heat dissipation and insulation work of the IGBT by packaging the silica gel and the cycloaliphatic gum, realizes the heat dissipation and insulation of a compact IGBT module, wherein the heat preservation and heat dissipation effects of the silica gel are increased by doping the phase-change ball into the silica gel, when the temperature of the silica gel is too high, the phase-change ball is liquefied to absorb a large amount of heat, so that the temperature of the silica gel is not easy to rise too fast, the heat dissipation is assisted, the normal work of the silica gel is not easy to be influenced, meanwhile, the contact area between the silica gel and the phase-change ball is increased when the liquefied phase-change ball flows into the capillary micropore of the silica gel, the heat exchange efficiency between the silica gel and the phase-change ball is greatly increased, when the IGBT module works in a low-temperature environment, the high temperature of an electronic element can heat the silica gel to cause the liquefaction of the phase-change ball, the liquefaction process of the phase-change ball, the working environment of the electronic element is kept warm, stronger voltage is discharged in the working process of the electronic element, when the silica gel and the cycloaliphatic gum are broken down, the electronic element works at high temperature, the phase change ball is in a liquid state, the phase change ball seeps out along a gap after the silica gel is broken down, and finally seeps into a shell capillary micropore under the action of a shell capillary micropore on an IGBT shell, and in the process of regular maintenance, a worker can know that the interior of the IGBT module is broken down by the high voltage when finding obvious grains on the IGBT shell, and needs to replace in time.
Drawings
Fig. 1 is a main flow chart of the IGBT module assembly of the present invention;
fig. 2 is a schematic structural diagram of an IGBT module of the invention;
fig. 3 is a front cross-sectional view of an IGBT module of the invention;
FIG. 4 is an enlarged partial view of the present invention at a subgeneric housing;
FIG. 5 is a schematic view of the microstructure of the silica gel of the present invention. .
The reference numbers in the figures illustrate:
the structure comprises a substrate 1, a lining plate 2, a busbar electrode 3, a 4FRD chip, an IGBT chip 5, silica gel 6, a phase change ball 7, a PCB 8, a cycloaliphat gum 9, an IGBT shell 10, a grid 11, an emitter 12, a collector 13, a silica gel capillary micropore 14 and a shell capillary pore 15.
Detailed Description
The drawings in the embodiments of the invention will be combined; the technical scheme in the embodiment of the invention is clearly and completely described; obviously; the described embodiments are only some of the embodiments of the invention; but not all embodiments, are based on the embodiments of the invention; all other embodiments obtained by a person skilled in the art without making any inventive step; all fall within the scope of protection of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "top/bottom", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "disposed," "sleeved/connected," "connected," and the like are to be construed broadly, e.g., "connected," which may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Example 1:
referring to fig. 1-2, a manufacturing process for heat dissipation packaging of a compact IGBT module includes a substrate 1, an IGBT housing 10 and a lining plate 2 are fixedly connected to an upper end of the substrate 1, an installation cavity is formed between the substrate 1 and the IGBT housing 10, the lining plate 2 is located in the installation cavity, a busbar electrode 3, an FRD chip 4, an IGBT chip 5 and the lining plate 2 are fixedly connected to an upper end of the lining plate 2 from left to right in sequence, the FRD chip 4, the IGBT chip 5 and the lining plate 2 are all electrically connected to each other, a section of the busbar electrode 3, which is far away from the lining plate 2, is fixedly connected to a PCB board 8, a silicone rubber 6 and a cycloaliphatic rubber 9 are filled in the installation cavity, the silicone rubber 6 is located on a lower side of the PCB board 8, the cycloaliphatic rubber 9 is located on an upper side of the.
A preparation process for heat dissipation packaging of a compact IGBT module mainly comprises the following preparation processes:
s1, cleaning the base material, cleaning the surfaces of the lining plate 2 and the PCB 8 by using absolute ethyl alcohol, washing away impurities such as dust on the surfaces of the lining plate 2 and the PCB 8, and air-drying the lining plate 2 and the PCB 8;
s2, welding base materials, fixedly connecting the lining plate 2 to the substrate 1, welding the busbar electrode 3, the FRD chip 4 and the IGBT chip 5 to the specified position on the lining plate 2 at one time, and electrically connecting the lining plate 2 and the FRD chip 4 and the lining plate 2 and the IGBT chip 5 by using conducting wires;
s3, welding the PCB, namely welding the PCB 8 to one end of the busbar electrode 3 away from the substrate 1, and properly adjusting the PCB 8 to ensure that the PCB 8 is parallel to the substrate 1 and the lining plate 2;
s4, installing a shell, installing the IGBT shell 10 at the upper end of the substrate 1, and placing the lining plate 2 and the PCB 8 between the substrate 1 and the IGBT shell 10;
s5, injecting heat dissipation glue, injecting liquid silica gel 6 into the installation cavity through the hole on the IGBT shell 10 until the liquid level of the silica gel 6 is equal to the upper end of the PCB 8, and waiting for the silica gel 6 to be naturally cured;
s7, injecting an insulating layer, injecting liquid cycloaliphatic gum 9 into the anzhong wall through the hole on the IGBT shell 10 until the liquid level of the cycloaliphatic gum 9 is flush with the inner wall of the upper end of the IGBT shell 10, and waiting for the cycloaliphatic gum 9 to be naturally cured;
and S8, performing factory inspection, and performing performance inspection on the finished IGBT module before factory inspection.
The load intensity of the IGBT module during high-temperature work can be greatly reduced, the IGBT module is not prone to breakdown the insulated packaging of the IGBT module when the work load of the IGBT module is too high, and normal use of the IGBT is not prone to being influenced.
Referring to fig. 2-5, a plurality of phase change cavities are drilled in a silica gel 6, the phase change cavities are filled with a plurality of phase change balls 7, the phase change balls 7 can increase the heat dissipation and heat preservation effects of the silica gel 6, so that each element in an installation cavity is not easy to be damaged due to high temperature generated by work, and meanwhile, each element is not easy to work abnormally at low temperature, the phase change balls 7 are made of polyethylene glycol, the melting point of the polyethylene glycol is 64-66 ℃, the latent heat is 190J/g, the melting point of the polyethylene glycol is combined with the working temperature of each element in the installation cavity, red liquid pigment is doped in the phase change balls 7 and used for developing color of the polyethylene glycol, so that a worker can conveniently observe the position of the polyethylene glycol, a plurality of silica gel capillary micropores 14 are drilled on the silica gel 6, the silica gel capillary micropores 14 are communicated with the phase change balls 7, and the, when the silica gel 6 fails to dissipate heat in time, the phase change ball 7 filled in the phase change cavity can be liquefied and absorb a large amount of heat, so as to assist the silica gel 6 to dissipate heat, the liquefied phase change ball 7 can flow into the silica gel capillary micropores 14 under the action of the silica gel capillary micropores 14, the contact area between the phase change ball 7 and the silica gel 6 is increased, the heat conduction efficiency between the silica gel 6 and the phase change ball 7 is greatly increased, a plurality of silica gel capillary micropores 14 are formed in the inner wall of the IGBT shell 10, the silica gel capillary micropores 14 are communicated with the installation cavity, when a component in the installation cavity fails and generates a strong voltage, the voltage can break down the silica gel 6 and the cycloaliphatic gum 9 to break the silica gel 6 and the cycloaliphatic gum 9, at the moment, the phase change ball 7 in the phase change cavity can be liquefied under the action of the high working temperature of the component and flows out through a gap between the broken silica gel 6, the staff is convenient to observe the specific working condition in the installation cavity and find out the fault parts in time.
Referring to fig. 1-2, in the cleaning of the substrate S1, the lining board 2 and the PCB 8 need to be air-dried in a dust-free environment, so that new impurities are not easily generated on the surfaces of the lining board 2 and the PCB 8, and the normal operation of the lining board 2 and the PCB 8 is not easily affected, in the welding of the substrate S2, the lining board 2, the FRD chip 4 and the IGBT chip 5 are all fixedly connected with wire inserts, and the quick electrical connection and disassembly between the lining board 2 and the FRD chip 4 and between the lining board 2 and the IGBT chip 5 can be realized through the wire inserts, and the silica gel 6 and the cycloaliphatic gum 9 need to be sealed by workers in the natural curing process, so that the impurities such as dust are not easily entered into the installation cavity through the pores of the IGBT shell 10, the silica gel 6 and the cycloaliphatic gum 9 are not easily polluted, the heat dissipation effect of the silica gel 6 and the insulation effect of the cycloaliphatic gum 9 are not easily affected, the lining board 2, all FRD chip 4, IGBT chip 5, PCB board 8, grid 11, emitter 12 and collector 13 need to be examined before installation, reduce the fault rate of the IGBT that the equipment is accomplished.
In the normal working process of the IGBT module, the electronic element lining plate 2, the bus bar electrode 3, the FRD chip 4, the IGBT chip 5 and the PCB plate 8 all generate a large amount of heat, the electronic element is easily damaged excessively by the excessive heat, the electronic element is easily failed in advance, the heat dissipation effect in the installation cavity can be greatly increased by the existence of the silica gel 6, when the electronic element generates the excessive heat and the temperature of the silica gel 6 reaches 65 ℃, the phase change ball 7 filled in the phase change cavity can be converted from a solid state into a liquid state, the phase change ball 7 can absorb a large amount of heat in the phase change process, the silica gel 6 is assisted to dissipate the heat, after the phase change ball 7 is converted into the liquid state, the liquid phase change ball 7 can flow into the silica gel capillary micropore 14 due to the effect of the silica gel capillary micropore 14, the contact area between the silica gel 6 and the phase change ball 7 is greatly increased, and the heat exchange rate between the silica gel 6 and, the auxiliary heat dissipation effect of the phase change ball 7 is increased, when an electronic element fails and high-power discharge occurs, the silicone rubber 6 and the cycloaliphatic gum 9 can be broken down by overhigh voltage, so that the silicone rubber 6 and the cycloaliphatic gum 9 are invalid, the heat dissipation and insulation of the electronic element are invalid, and the normal use of the IGBT module is influenced.
The heat dissipation and insulation work of the IGBT is completed through the encapsulation of the silica gel 6 and the cycloaliphatic gum 9, the heat dissipation and insulation of the compact IGBT module are realized, wherein the heat preservation and heat dissipation effects of the silica gel 6 are increased by doping the phase change ball 7 into the silica gel 6, when the temperature of the silica gel 6 is too high, the phase change ball 7 is liquefied to absorb a large amount of heat, so that the temperature of the silica gel 6 is not easy to rise too fast, the heat dissipation is assisted, the normal work of the silica gel 6 is not easy to be influenced, meanwhile, the contact area between the silica gel 6 and the phase change ball 7 is increased when the liquefied phase change ball 7 flows into the silica gel capillary micropores 14, the heat exchange efficiency between the silica gel 6 and the phase change ball 7 is greatly increased, when the IGBT module works in a low-temperature environment, the high temperature of an electronic element can heat the silica gel 6 to cause the liquefaction of the phase change ball 7, and the liquefaction process of the, liquid phase change ball 7 can solidify and emit a large amount of heats, keep warm to electronic component's operational environment, and put out stronger voltage in electronic component working process, when puncturing silica gel 6 and cycloaliphatic gum 9, electronic component worked under high temperature this moment, phase change ball 7 is in the liquid state, phase change ball 7 can ooze along the gap after silica gel 6 punctures this moment, at last ooze into in shell capillary micropore 15 under the shell capillary micropore 15 effect on IGBT shell 10, the staff is at the in-process of periodic maintenance, can learn that IGBT module inside has been punctured by high pressure when having obvious line on the discovery IGBT shell 10, need in time change.
The above; but are merely preferred embodiments of the invention; the scope of the invention is not limited thereto; any person skilled in the art is within the technical scope of the present disclosure; the technical scheme and the improved concept of the invention are equally replaced or changed; are intended to be covered by the scope of the present invention.
Claims (10)
1. A module for compact IGBT, comprising a substrate (1), characterized in that: the utility model discloses a solar energy collector, including base plate (1), lining board (2), base plate (1) and IGBT shell (10) between form the installation cavity, and lining board (2) are located the installation cavity, the upper end of lining board (2) is from left right side fixedly connected with female row electrode (3), FRD chip (4) and IGBT chip (5) in proper order FRD chip (4) and IGBT chip (5) and lining board (2) between equal electric connection, female row electrode (3) keep away from one section fixedly connected with PCB board (8) of lining board (2), the installation cavity intussuseption is filled with silica gel (6) and cycloaliphatic gum (9), silica gel (6) are located the downside of PCB board (8), cycloaliphatic gum (9) are located the upside of PCB board (8), the upper end of IGBT shell (10) is connected with grid (11), emitter stage (12) and collector (13), the grid electrode (11), the emitter electrode (12) and the collector electrode (13) are electrically connected with the PCB (8);
a preparation process for heat dissipation packaging of a compact IGBT module mainly comprises the following preparation processes:
s1, cleaning a base material, cleaning the surfaces of the lining plate (2) and the PCB (8) by using absolute ethyl alcohol, washing away impurities such as dust on the surfaces of the lining plate (2) and the PCB (8), and air-drying the lining plate (2) and the PCB (8);
s2, welding base materials, fixedly connecting the lining plate (2) to the substrate (1), welding the busbar electrode (3), the FRD chip (4) and the IGBT chip (5) to a specified position on the lining plate (2) at one time, and electrically connecting the lining plate (2) with the FRD chip (4) and the lining plate (2) with the IGBT chip (5) by using conducting wires;
s3, welding the PCB, namely welding the PCB (8) to one end, far away from the base plate (1), of the busbar electrode (3), and properly adjusting the PCB (8) to enable the PCB (8) to be parallel to the base plate (1) and the lining plate (2);
s4, installing a shell, installing an IGBT shell (10) at the upper end of the substrate (1), and placing the lining plate (2) and the PCB (8) between the substrate (1) and the IGBT shell (10);
s5, injecting heat dissipation glue, injecting liquid silica gel (6) into the installation cavity through the hole on the IGBT shell (10) until the liquid level of the silica gel (6) is equal to the upper end of the PCB (8), and waiting for the natural solidification of the silica gel (6);
s7, injecting an insulating layer, injecting liquid cycloaliphatic gum (9) into the anzhu wall through the pores on the IGBT shell (10) until the liquid level of the cycloaliphatic gum (9) is flush with the inner wall of the upper end of the IGBT shell (10), and waiting for the cycloaliphatic gum (9) to be naturally cured;
and S8, performing factory inspection, and performing performance inspection on the finished IGBT module before factory inspection.
2. The process according to claim 1, wherein the step of preparing the heat dissipation package for the compact IGBT module comprises the following steps: and a plurality of phase change cavities are formed in the silica gel (6) in a chiseling mode, and a plurality of phase change balls (7) are filled in the phase change cavities.
3. The process according to claim 2, wherein the step of preparing the heat dissipation package for the compact IGBT module comprises the following steps: the phase change ball (7) is made of polyethylene glycol.
4. The process according to claim 2, wherein the step of preparing the heat dissipation package for the compact IGBT module comprises the following steps: the phase change ball (7) is doped with red liquid pigment.
5. The process according to claim 2, wherein the step of preparing the heat dissipation package for the compact IGBT module comprises the following steps: a plurality of silica gel capillary micropores (14) are formed in the silica gel (6), and the silica gel capillary micropores (14) are communicated with the phase change ball (7).
6. The process according to claim 1, wherein the step of preparing the heat dissipation package for the compact IGBT module comprises the following steps: a plurality of silica gel capillary micropores (14) are cut on the inner wall of the IGBT shell (10), and the silica gel capillary micropores (14) are communicated with the installation cavity.
7. The process according to claim 1, wherein the step of preparing the heat dissipation package for the compact IGBT module comprises the following steps: in the S1 base material cleaning process, the lining plate (2) and the PCB (8) need to be dried in a dust-free environment.
8. The process according to claim 1, wherein the step of preparing the heat dissipation package for the compact IGBT module comprises the following steps: and in the welding of the S2 base material, lead socket is fixedly connected to the lining plate (2), the FRD chip (4) and the IGBT chip (5).
9. The process according to claim 1, wherein the step of preparing the heat dissipation package for the compact IGBT module comprises the following steps: the silica gel (6) and the cycloaliphatic gum (9) require workers to seal the hole on the IGBT shell (10) in the natural curing process.
10. The process according to claim 1, wherein the step of preparing the heat dissipation package for the compact IGBT module comprises the following steps: the device is characterized in that the lining plate (2), the busbar electrode (3), the FRD chip (4), the IGBT chip (5), the PCB (8), the grid electrode (11), the emitter (12) and the collector (13) are required to be tested before installation.
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