CN103295920A - Noninsulated type power module and packaging process thereof - Google Patents
Noninsulated type power module and packaging process thereof Download PDFInfo
- Publication number
- CN103295920A CN103295920A CN2012100525886A CN201210052588A CN103295920A CN 103295920 A CN103295920 A CN 103295920A CN 2012100525886 A CN2012100525886 A CN 2012100525886A CN 201210052588 A CN201210052588 A CN 201210052588A CN 103295920 A CN103295920 A CN 103295920A
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- Prior art keywords
- power model
- type power
- chip
- nonisulated type
- copper base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000012858 packaging process Methods 0.000 title abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 47
- 239000010949 copper Substances 0.000 claims abstract description 47
- 229910052802 copper Inorganic materials 0.000 claims abstract description 47
- 238000012536 packaging technology Methods 0.000 claims description 20
- 239000003822 epoxy resin Substances 0.000 claims description 18
- 229920000647 polyepoxide Polymers 0.000 claims description 18
- 238000010276 construction Methods 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 238000005452 bending Methods 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000004411 aluminium Substances 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 7
- 238000003466 welding Methods 0.000 claims description 7
- 238000000465 moulding Methods 0.000 claims description 6
- 238000005538 encapsulation Methods 0.000 claims description 5
- 239000000565 sealant Substances 0.000 claims description 4
- 239000012530 fluid Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 15
- 230000035882 stress Effects 0.000 abstract description 2
- 230000008646 thermal stress Effects 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The invention provides a noninsulated type power module which comprises a copper substrate, a power module chip located on a designated position of the copper substrate, a gate pole electrode led out of the power module chip, and an outer shell used for covering the copper substrate, the gate pole electrode and the power module chip, wherein the gate pole electrode is led out of the outer shell. The power module chip is directly welded to the copper substrate, and the electrode is welded to the power module chip. The noninsulated type power module is simple in structure and packaging process, easy to achieve, and capable of effectively reducing mechanical stress and thermal stress of a small module, and therefore reliability of the noninsulated type power module is improved.
Description
Technical field
The present invention relates to semiconductor, relate in particular to nonisulated type power model and encapsulation technology thereof.
Background technology
Power model according to the structure or the uninsulated structure that between its chip and the substrate are electric insulation, is divided into insulated type power model and nonisulated type power model.
Usually its substrate is as public electrode for power model, and it has characteristics such as forward voltage drop is low, surge current is big, is mainly used in all kinds of bonding machines and Switching Power Supply.
But, be usually operated under high voltage, the big current condition just because of power model, therefore, the heat radiation of power model is exactly a problem must considering usually.
Summary of the invention
One of purpose of the present invention provide a kind of nonisulated type power model and packaging technology, the nonisulated type power model of making by this packaging technology can reduce the thermal resistance of module, thereby improves the reliability of power model.
Another object of the present invention is to simplify the structure of nonisulated type power model, thereby reduces manufacturing cost.
According to one aspect of the present invention, provide a kind of packaging technology of nonisulated type power.Be the packaging technology that example illustrates nonisulated type power of the present invention below with the thyristor chip.It comprises: step (1), i.e. components and parts positioning step: the specified location that power model chip 220 is installed to copper base 210; Step (2), i.e. first welding step: power model chip 220 and copper base 210 are welded together; Step (3) namely seals step: the copper base 210 that will be welded with power model chip 220 is installed together with shell 280, and adopts fluid sealant 270 to seal to form hermetically-sealed construction; And step (4), i.e. curing schedule: adopt epoxy resin 290, encapsulate the hermetically-sealed construction that is formed by described sealing step and solidify it, thereby form nonisulated type power model 200 of the present invention.
According to the packaging technology of nonisulated type power model 200 provided by the invention, wherein, step (2) is carried out under vacuum state.
In the packaging technology of nonisulated type power model 200 before, can also comprise second welding step before afterwards and in beginning step (3) at completing steps (2): on power model chip 220, gate electrode 230 is welded on the power model chip 230, and makes gate electrode 230 from epoxy resin 290, expose out.
In the packaging technology of nonisulated type power model 200 of the present invention, at completing steps (4) afterwards, can also comprise the outward appearance treatment step: with the gate electrode 230 that from epoxy resin 290, exposes on the shell 280 moulding of bending.
In the packaging technology of nonisulated type power model 200 of the present invention, power model can be thyristor module, diode (led) module, IGBT module or MOSFET module.
According to second aspect of the present invention, a kind of nonisulated type power model 200 is provided, it comprises: copper base 210; Be positioned at the power model chip 220 of copper base 210 specified location; The gate electrode 230 of drawing from power model chip 220; And shell 280, be used for cover cap copper base 210, gate electrode 230 and power model chip 220; Wherein, power model chip 220 directly is welded on the copper base 210, and electrode 230 is welded on the power model chip 220.
According to nonisulated type power model 200 provided by the invention, wherein, power model chip 220, gate electrode 230, copper base 210 and shell 280 adopt 270 sealings of silicon gel, adopt epoxy resin 290 cure package at silicon gel 270, to form hermetically-sealed construction.
In according to nonisulated type power model 200 of the present invention, gate electrode 230 is preferably by the moulding of bending.
In according to nonisulated type power model 200 of the present invention, preferably adopt aluminium wire to be bonded between the chip 220 in the nonisulated type power model 200.
In according to nonisulated type power model 200 of the present invention, the thickness of copper base is preferably 3 millimeters.
Description of drawings
The processing step that insulated type power model of the prior art shown in Fig. 1 adopts when encapsulation;
Shown in Fig. 2 is the internal structure schematic diagram of insulated type power model in the prior art;
Shown in Fig. 3 is the processing step that nonisulated type power model of the present invention adopts when encapsulation; And
Shown in Fig. 4 is the internal structure schematic diagram that adopts the formed nonisulated type power model of packaging technology of the present invention.
Embodiment
Nonisulated type power model and the packaging technology thereof of the embodiment of the invention are described with reference to the accompanying drawings.
Those skilled in the art can understand, and the term that adopts among the present invention " power model " is a kind of general reference, and it can be thyristor, diode (led) module, IGBT module or MOSFET module etc.But for convenience, in the description of specification, only represent thyristor, diode (led) module, IGBT module or MOSFET module etc. with " power model ".
Power model is owing to be usually operated under the big electric current, and the thermal resistance of itself can be subjected to the influence of several factors.For example, the radiating condition of module, power, the thickness of weld layer and the thermal coefficient of expansion of weld layer etc. when device is worked all can influence the thermal resistance of device.
The thermal resistance of power model is provided by following formula:
R=Δ T/P formula (1)
Wherein, R is thermal resistance;
Δ T is the temperature difference that the device two ends form;
P is that device is owing to institute adds electric current and the caused power of voltage.
From formula (1) as can be seen, the temperature difference that the device two ends form is more little, and then thermal resistance is more little.Therefore, manage to reduce the thickness of weld layer, can reduce the temperature difference at device two ends, thereby reduce the thermal resistance of power device greatly.
Shown in Fig. 1 is the insulated type power model packaging technology of prior art, and shown in Fig. 2 is the internal structure schematic diagram that adopts the insulated type power model of the made prior art of technology shown in Figure 1.
As shown in Figure 2, the insulated type power model 100 of prior art comprises copper base 110, and it is arranged at the bottom of power model 100.Copper base 110 is provided with Direct Bonding copper DirectBonding Copper, DBC substrate 120.One or more chips 140 are mounted on the precalculated position of DBC substrate 120, form insulated type power model 100 after encapsulating.
In addition, power model 100 also comprises the shell 180 that coats copper base 110 grades.The inside of shell 180 is filled with silicon gel 170, and power model 100 also comprises cover plate of outer casing 190.
The power model that Fig. 1 illustrates prior art shown in Figure 2 needs to form by following processing step at least:
(1) chip 140 is installed to the specified location of DBC substrate 120;
(2) DBC substrate 120 is soldered on the precalculated position of copper base 110;
(3) by the aluminium wire bonding, a chip and another chip are coupled together;
(4) add shell 180 for copper base 110 grades;
(5) give power model encapsulating, the sealing that has added shell 180;
(6) add cover plate of outer casing 190, and further sealed package;
(7) on cover plate of outer casing, will bend electrode 130 moulding of bending.
From Fig. 1 and Fig. 2 as can be seen, the insulated type power model of prior art owing to earlier chip 140 is welded on the DBC substrate 120, and then DBC substrate 120 is welded on the copper base 110, thereby its thermal resistance is bigger when work, and heat dissipation problem is difficult to solve.
In addition, owing in the above-mentioned processing step, when sealant pouring and sealing, need add cover plate of outer casing 190, thereby complex structure, cost are higher.
In order to address this problem, adopt among the present invention chip and copper base are directly welded, replace original with chips welding at the processing step that then again DBC is welded on the DBC on the copper base, and adopt epoxy resin that power model is carried out plastic packaging, replace original process for filling colloid into.
Packaging technology of the present invention as shown in Figure 3.
As shown in Figure 3, nonisulated type power model packaging technology of the present invention comprises the steps:
Step (1), i.e. components and parts positioning step: the specified location that power model chip 220 is installed to copper base 210;
Step (2), i.e. first welding step: power model chip 220 and copper base 210 are welded together;
Step (3) namely seals step: copper base 210 and a shell 280 that will be welded with power model chip 220 are installed together, and adopt fluid sealant 270 to seal;
Step (4), i.e. curing schedule: adopt epoxy resin 290, encapsulation copper base 210 also makes epoxy resin cure.
In above-mentioned technology of the present invention, power model chip 220 and copper base 210 welded together under vacuum state carry out.
Finish power model chip 220 and copper base 210 welded together after, can also comprise second welding step: on described power model chip 220, gate electrode 230 is welded on the power model chip 220, and makes gate electrode 230 from epoxy resin 290, expose out.
In addition, above-mentioned finish curing schedule after, can also comprise an outward appearance treatment step, that is, with the moulding of bending of the bare electrode on the shell 280.
By processing step as shown in Figure 3, just can form nonisulated type power model of the present invention.
Adopt the internal structure schematic diagram of the formed nonisulated type power model of the present invention of nonisulated type power model packaging technology of the present invention shown in Fig. 4.
With Fig. 4 and Fig. 2 relatively after as can be seen, the difference of the internal structure of the insulated type power model of the internal structure of nonisulated type power model of the present invention and prior art shown in Figure 2 is, have the DBC substrate in the insulated type power model of the prior art, and in the of the present invention nonisulated type power model shown in Figure 4, be not have the DBC substrate, namely chip is directly to be welded on the copper base.
As shown in Figure 4, nonisulated type power model of the present invention comprises:
Be positioned at the power model chip 220 of copper base 210 specified location; And
The gate electrode 230 of drawing from the power model chip,
Wherein, power model chip 220 and gate electrode 230 are directly to be welded on the copper base 210, and
Wherein, gate electrode 230 1 ends that earlier seal power model chips 220, copper base 210 with silicon gel 270 and be coupled mutually with power model chip 220 are to form a hermetically-sealed construction, then at the whole hermetically-sealed construction of silicon gel 270 usefulness epoxy resin, 290 cure package, thereby form nonisulated type power model 200.Therefore epoxy resin 290 places on the silicon gel 270, forms to solidify seal modules, and itself and shell 280 be the internal structures of the nonisulated type power model 200 of protection jointly.
In addition, in the internal structure of the insulated type power model 100 of prior art shown in Figure 2, be to adopt aluminium wire 150 to be bonded together between power model chip 140 and another power model chip 140.Compare with Fig. 2, in the internal structure of of the present invention nonisulated type power model 200 shown in Figure 4, the modular structure of this employing aluminium wire bonding is not shown.
But those skilled in the art are appreciated that in concrete circuit structure, also can adopt aluminium wire that a certain chip and another chip are got up by the circuit requirement bonding in the nonisulated type power model 200 of the present invention.
From the processing step of the invention described above as can be seen, because the special construction (being nonisulated type) of nonisulated type power model makes its pressure drop very low, and weld layer thickness is main thin more a lot of than insulated type module because do not use DBC, so more be conducive to the heat radiation of module, thereby make its thermal resistance reduce greatly.In a preferred embodiment, thickness that can also attenuate copper base 210 is with further reduction thermal resistance, for example, the thickness of copper base 210 is arranged on 3 millimeter.
In addition, adopt epoxy resin 290 to replace cover plate of outer casing 190 shown in Figure 2, simple in structure, and technology is simple, be easy to realize, and use the epoxide-resin glue sealing can reduce mechanical stress and the thermal stress of module effectively, thereby can improve nonisulated type power model reliability during operation.
Above, describe specific embodiments of the invention with reference to the accompanying drawings.But those skilled in the art can understand, and under the situation that does not depart from principle of the present invention and spirit, can also make some modifications and changes to the above embodiment of the present invention.The description of embodiment only is in order to make those skilled in the art can understand, implement the present invention, the present invention should not to be interpreted as only to only limit to described embodiment.Protection scope of the present invention is limited by claims.
Claims (12)
1. the packaging technology of a nonisulated type power model 200, it comprises:
Step (1), i.e. positioning step: the specified location that power model chip 220 is installed to copper base 210;
Step (2), i.e. first welding step: described power model chip 220 is welded together with described copper base 210;
Step (3) namely seals step: the described copper base 210 that will be welded with described power model chip 220 is installed together with shell 280, and adopts fluid sealant 270 to seal to form hermetically-sealed construction; And
Step (4), i.e. curing schedule: adopt epoxy resin 290, the described hermetically-sealed construction that encapsulation is formed by described sealing step, thus form described nonisulated type power model 200.
2. the packaging technology of nonisulated type power model 200 as claimed in claim 1 is characterized in that, described step (2) is carried out under vacuum state.
3. the packaging technology of nonisulated type power model 200 as claimed in claim 1 or 2, it is characterized in that, can also comprise second welding step before afterwards and in beginning step (3) at completing steps (2): on described power model chip 220, gate electrode 230 is welded on the described power model chip 230, and makes described gate electrode 230 from described epoxy resin 290, expose out.
4. the packaging technology of nonisulated type power model 200 as claimed in claim 3, it is characterized in that, at completing steps (4) afterwards, also comprise the outward appearance treatment step: with the gate electrode 230 that from described epoxy resin 290, exposes on the described shell 280 moulding of bending.
5. the packaging technology of nonisulated type power model 200 as claimed in claim 1 is characterized in that, described power model is thyristor module, diode (led) module, IGBT module or MOSFET module.
6. nonisulated type power model 200, it comprises:
Copper base 210;
Be positioned at the power model chip 220 of described copper base 210 specified location;
The gate electrode 230 of drawing from described power model chip 220; And
Shell 280 is used for the described copper base 210 of cover cap, gate electrode 230 and described power model chip 220;
Wherein, described power model chip 220 directly is welded on the described copper base 210, and described gate electrode 230 is welded on the described power model chip 220.
7. nonisulated type power model 200 as claimed in claim 6 is characterized in that,
Wherein, described power model chip 220, described gate electrode 230, described copper base 210 and described shell 280 adopt 270 sealings of silicon gel, adopt epoxy resin 290 cure package at described silicon gel 270, to form hermetically-sealed construction.
8. nonisulated type power model 200 as claimed in claim 7 is characterized in that, described gate electrode 230 is drawn from described epoxy resin 290.
9. nonisulated type power model 200 as claimed in claim 8 is characterized in that, described gate electrode 230 moulding of being bended.
10. as the described nonisulated type power model 200 of arbitrary claim in the claim 6 to 8, it is characterized in that, adopt aluminium wire to be bonded between the chip 220 in the described nonisulated type power model 200.
11. nonisulated type power model 200 as claimed in claim 6 is characterized in that the thickness of described copper base is 3 millimeters.
12. nonisulated type power model as claimed in claim 6 is characterized in that, described power model is thyristor module, diode (led) module, IGBT module or MOSFET module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210052588.6A CN103295920B (en) | 2012-02-22 | 2012-02-22 | Nonisulated type power model and packaging technology thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210052588.6A CN103295920B (en) | 2012-02-22 | 2012-02-22 | Nonisulated type power model and packaging technology thereof |
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| Publication Number | Publication Date |
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| CN103295920A true CN103295920A (en) | 2013-09-11 |
| CN103295920B CN103295920B (en) | 2016-04-27 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105161477A (en) * | 2015-08-14 | 2015-12-16 | 株洲南车时代电气股份有限公司 | Planar power module |
| CN105428342A (en) * | 2015-01-26 | 2016-03-23 | 湖北台基半导体股份有限公司 | High-current power semiconductor module |
| CN107301993A (en) * | 2017-06-08 | 2017-10-27 | 太极半导体（苏州）有限公司 | It is a kind of to increase the encapsulating structure and its manufacture craft of non-functional chip |
| CN111048474A (en) * | 2019-08-29 | 2020-04-21 | 宜兴市三鑫电子有限公司 | Preparation process for heat dissipation package of compact IGBT module |
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| US5892279A (en) * | 1995-12-11 | 1999-04-06 | Northrop Grumman Corporation | Packaging for electronic power devices and applications using the packaging |
| JP2003007969A (en) * | 2001-06-27 | 2003-01-10 | Toshiba Corp | Semiconductor module and power converter |
| CN101593707A (en) * | 2009-07-03 | 2009-12-02 | 无锡友达电子有限公司 | Packaging method for high power integrated circuits |
| CN202948921U (en) * | 2012-02-22 | 2013-05-22 | 江苏宏微科技有限公司 | Non-insulated type power module |
-
2012
- 2012-02-22 CN CN201210052588.6A patent/CN103295920B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5892279A (en) * | 1995-12-11 | 1999-04-06 | Northrop Grumman Corporation | Packaging for electronic power devices and applications using the packaging |
| JP2003007969A (en) * | 2001-06-27 | 2003-01-10 | Toshiba Corp | Semiconductor module and power converter |
| CN101593707A (en) * | 2009-07-03 | 2009-12-02 | 无锡友达电子有限公司 | Packaging method for high power integrated circuits |
| CN202948921U (en) * | 2012-02-22 | 2013-05-22 | 江苏宏微科技有限公司 | Non-insulated type power module |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105428342A (en) * | 2015-01-26 | 2016-03-23 | 湖北台基半导体股份有限公司 | High-current power semiconductor module |
| CN105428342B (en) * | 2015-01-26 | 2019-02-12 | 湖北台基半导体股份有限公司 | A kind of high current power semiconductor modular |
| CN105161477A (en) * | 2015-08-14 | 2015-12-16 | 株洲南车时代电气股份有限公司 | Planar power module |
| CN105161477B (en) * | 2015-08-14 | 2019-10-18 | 株洲南车时代电气股份有限公司 | A kind of planar power module |
| CN107301993A (en) * | 2017-06-08 | 2017-10-27 | 太极半导体（苏州）有限公司 | It is a kind of to increase the encapsulating structure and its manufacture craft of non-functional chip |
| CN111048474A (en) * | 2019-08-29 | 2020-04-21 | 宜兴市三鑫电子有限公司 | Preparation process for heat dissipation package of compact IGBT module |
| CN111048474B (en) * | 2019-08-29 | 2021-07-16 | 宜兴市三鑫电子有限公司 | Preparation process for heat dissipation package of compact IGBT module |
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| Publication number | Publication date |
|---|---|
| CN103295920B (en) | 2016-04-27 |
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