[go: up one dir, main page]

CN110931649B - Organic electroluminescent device and display device - Google Patents

Organic electroluminescent device and display device Download PDF

Info

Publication number
CN110931649B
CN110931649B CN201911205731.9A CN201911205731A CN110931649B CN 110931649 B CN110931649 B CN 110931649B CN 201911205731 A CN201911205731 A CN 201911205731A CN 110931649 B CN110931649 B CN 110931649B
Authority
CN
China
Prior art keywords
layer
electron blocking
hole transport
organic electroluminescent
electroluminescent device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201911205731.9A
Other languages
Chinese (zh)
Other versions
CN110931649A (en
Inventor
李国孟
李飞霞
魏金贝
李梦真
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kunshan Govisionox Optoelectronics Co Ltd
Original Assignee
Kunshan Govisionox Optoelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kunshan Govisionox Optoelectronics Co Ltd filed Critical Kunshan Govisionox Optoelectronics Co Ltd
Priority to CN201911205731.9A priority Critical patent/CN110931649B/en
Publication of CN110931649A publication Critical patent/CN110931649A/en
Application granted granted Critical
Publication of CN110931649B publication Critical patent/CN110931649B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
    • H10K50/121—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants for assisting energy transfer, e.g. sensitization
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention relates to an organic electroluminescent device and a display device, wherein the organic electroluminescent device comprises a first electrode, a second electrode and an organic layer positioned between the first electrode and the second electrode; the organic layer comprises a hole transport layer, an electron blocking layer and a light emitting layer; the luminescent layer contains a host material, a thermally activated delayed fluorescence sensitizer and a fluorescent dye; the electron blocking layer contains an electron blocking material, and the hole transport layer contains a hole transport material; the hole mobility of the electron blocking material is higher than that of the hole transport material, and the HOMO energy level difference between the electron blocking material and the hole transport material is less than or equal to 0.3eV. According to the invention, the starting voltage of the device is effectively reduced by matching the electron blocking material with high hole mobility and appropriate HOMO energy level.

Description

Organic electroluminescent device and display device
Technical Field
The invention relates to the technical field of organic electroluminescence, in particular to an organic electroluminescence device and a display device.
Background
Currently, in order to meet various device requirements, researchers in the field have developed various organic functional materials for use in OLEDs, wherein a very significant concern is a Thermally Activated Delayed Fluorescence (TADF) material, which can still effectively utilize triplet excitons to achieve high luminous efficiency without using a metal complex by promoting the conversion of triplet excitons to singlet excitons when applied to an organic electroluminescent material.
In a TASF system, when a thermally activated delayed fluorescence material is used as a sensitizer, the energy of a main material is transferred to the TADF material, then the triplet state energy returns to the singlet state through a reverse system cross-over (RISC) process, and then the energy is transferred to a doped fluorescent dye to emit light, so that the complete energy transfer from the main body to dye molecules can be realized, and the limit of 25% of internal quantum efficiency of the traditional fluorescent doped dye can be broken through. However, the conventional TASF device still has some defects, such as a problem of high turn-on voltage.
Therefore, there is a need in the art to develop a new organic electroluminescent device to improve the problem of high turn-on voltage.
Disclosure of Invention
The invention aims to provide an organic electroluminescent device, which solves the problem of high starting voltage of the organic electroluminescent device.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides an organic electroluminescent device, which comprises a first electrode, a second electrode and an organic layer positioned between the first electrode and the second electrode;
the organic layer comprises a hole transport layer, an electron blocking layer and a light emitting layer;
the luminescent layer contains a host material, a thermal activation delayed fluorescence sensitizer and a fluorescent dye;
the electron blocking layer contains an electron blocking material, and the hole transport layer contains a hole transport material;
the hole mobility of the electron blocking material is higher than that of the hole transport material, and the HOMO energy level difference between the electron blocking material and the hole transport material is less than or equal to 0.3eV.
Preferably, the electron blocking material has a hole mobility ≧ 1 × 10 -5 cm 2 V.s, and the hole mobility of the hole transport material is not less than 1 x 10 -6 cm 2 /V·s。
Preferably, the electron blocking material includes any one or at least two combinations of compounds shown as EB-1 to EB-13.
Preferably, the hole transport material includes any one or at least two combinations of compounds shown as HT-1 to HT-34.
Preferably, the host material comprises any one or a combination of at least two of the compounds shown as TDH1 to TDH 37.
Preferably, the fluorescent dye includes any one or at least two combinations of the compounds shown as F-1 to F-32.
Preferably, the thermally activated delayed fluorescence sensitizer includes any one or at least two combinations of compounds shown as T-1 to T-99; wherein in the T-71, the T-72 and the T-73, n is 1, 2 or 3 respectively and independently.
Preferably, the thickness of the electron blocking layer is 1nm to 300nm;
and/or the thickness of the hole transport layer is 5 nm-300 nm;
and/or the thickness of the luminescent layer is 1 nm-50 nm.
Preferably, the fluorescent dye accounts for 0.1-20 wt% of the luminescent layer material;
and/or the thermal activation delayed fluorescence sensitizer accounts for 1-99 wt% of the material of the luminescent layer.
Preferably, the thermally activated delayed fluorescence sensitizer accounts for 1wt% to 50wt% of the material of the light emitting layer.
Preferably, the organic layer further includes any one or at least two combinations of a Hole Injection Layer (HIL), a Hole Blocking Layer (HBL), an Electron Transport Layer (ETL), and an Electron Injection Layer (EIL).
Another object of the present invention is to provide a display device including the organic electroluminescent element according to the first object.
Compared with the prior art, the invention has the following beneficial effects:
the invention provides a novel organic electroluminescent device, wherein an electron blocking material with high hole mobility and proper HOMO energy level is introduced into the device, firstly, the hole mobility of the electron blocking material is high, the hole mobility of the hole transport material is high, the condition of current carrier blocking can be avoided, the conduction of electric charges is facilitated, secondly, the proper HOMO energy level difference is kept between the electron blocking material and the hole transport material, the energy level barrier of the hole injection material injected into the electron blocking material can be effectively reduced, and therefore the starting voltage of the device is effectively reduced.
Drawings
Fig. 1 is a schematic structural view of an organic electroluminescent device provided in example 1.
Detailed Description
The technical solution of the present invention is further explained by the following embodiments. It should be understood by those skilled in the art that the examples are only for the understanding of the present invention and should not be construed as the specific limitations of the present invention.
At present, the defect of higher turn-on voltage still exists in the thermally activated delayed fluorescence electroluminescent device, one reason is that the situation of carrier 'blocking' occurs, and the conduction of charges is not facilitated.
To this end, the present invention provides an organic electroluminescent device comprising a first electrode, a second electrode, and an organic layer between the first electrode and the second electrode;
the organic layer includes a Hole Transport Layer (HTL), an Electron Blocking Layer (EBL), and an emission layer (EML);
the luminescent layer contains a host material, a thermal activation delayed fluorescence sensitizer and a fluorescent dye;
the electron blocking layer contains an electron blocking material, and the hole transport layer contains a hole transport material;
the hole mobility of the electron blocking material is higher than that of the hole transporting material, and the HOMO energy level difference between the electron blocking material and the hole transporting material is less than or equal to 0.3eV, such as 0.02eV, 0.04eV, 0.12eV, 0.14eV, 0.19eV, 0.23eV, 0.29eV, etc.
The invention provides a novel organic electroluminescent device, wherein an electronic blocking material with high hole mobility and proper HOMO energy level is introduced into the device, firstly, the hole mobility of the hole transport material with high hole mobility of the electronic blocking material can avoid the condition of current carrier blocking, which is beneficial to charge conduction, and secondly, the electronic blocking material and the hole transport material keep proper HOMO energy level difference, which can effectively reduce the energy level barrier of the hole injection material injected into the electronic blocking material, thereby effectively reducing the starting voltage of the device, and especially, the effect is better within the enumerated point value range (0.02-0.29 eV).
Further, the electron blocking material has a hole mobility of 1X 10 or more -5 cm 2 V.s, e.g. 2.3X 10 -5 cm 2 /V·s、6.2×10 -5 cm 2 /V·s、7×10 -5 cm 2 /V·s、1.2×10 -4 cm 2 /V·s、2.2×10 -4 cm 2 /V·s、2.9×10 - 4 cm 2 V.s, etc., and the hole mobility of the hole transport material is not less than 1X 10 -6 cm 2 V.s, e.g. 2.3X 10 -5 cm 2 /V·s、4.2×10 -5 cm 2 /V·s、5.6×10 -5 cm 2 /V·s、6.6×10 -5 cm 2 /V·s、6.7×10 -5 cm 2 /V·s、7.2×10 - 5 cm 2 /V·s、7.7×10 -5 cm 2 /V·s、2.6×10 -4 cm 2 and/V.s.
According to the invention, an electron blocking layer material and a hole transport layer material with specific hole mobility are preferably selected, the two layers of materials are matched, and the electron blocking material with the hole mobility higher than that of the hole transport layer is used, so that the charge accumulation of carriers in the transfer process between the electron blocking layer and the hole transport layer can be effectively reduced, the hole carriers are more smooth in the transfer process, and the reduction of the turn-on voltage of a device is more facilitated, especially in the range of the enumerated point values (the hole mobility of the electron blocking material is 2.3 multiplied by 10) -5 ～2.9×10 -4 cm 2 V.s, hole mobility of the hole transport material is 2.3X 10 -5 ～2.6×10 -4 cm 2 V.s) is more effective.
Further, the electron blocking material includes any one or at least two combinations of compounds shown as EB-1 to EB-13 (for example, a combination of EB-1 and EB-2, a combination of EB-5, EB-6, and EB-4, a combination of EB-1, EB-3, EB-4, and EB-6, and the like):
Figure GDA0002303737630000031
further, the hole transport material includes any one or at least two combinations of compounds shown as HT-1 to HT-34 (e.g., a combination of HT-1 and HT-2, a combination of HT-5, HT-10, and HT-16, a combination of HT-31, HT-3, HT-27, and HT-28, etc.):
Figure GDA0002303737630000032
Figure GDA0002303737630000041
Figure GDA0002303737630000051
the invention further preferably selects the electron blocking material and the hole transport material with the specific structures, particularly preferably uses the electron blocking material and the hole transport material in a matching way, particularly preferably selects the material combination matching with the HOMO energy level difference of less than 0.3eV, and can further reduce the energy level barrier of holes in the transport process and further reduce the turn-on voltage of the device.
Further, the host material includes any one or at least two combinations of compounds shown as TDH1 to TDH37 (e.g., a combination of TDH1 and TDH2, a combination of TDH5, TDH10 and TDH16, a combination of TDH31, TDH3, TDH27 and TDH28, etc.):
Figure GDA0002303737630000052
Figure GDA0002303737630000061
the main materials of the series are carbazole compounds, and the carbazole compounds have good carrier transmission capability and high triplet state energy level, can be effectively combined and matched with a sensitizer and dye, reduce the starting voltage and improve the luminous efficiency.
Further, the fluorescent dye includes any one or at least two combinations of the compounds represented by F-1 to F-32 (e.g., a combination of F-1 and F-2, a combination of F-5, F-7 and F-12, a combination of F-3, F-30, F-7 and F-8, etc.):
Figure GDA0002303737630000062
Figure GDA0002303737630000071
Figure GDA0002303737630000081
Figure GDA0002303737630000091
further, the heat-activated delayed fluorescence sensitizer includes any one or at least two combinations of compounds shown as T-1 to T-99 (e.g., a combination of T-1 and T-2, a combination of T-5, T-7 and T-12, a combination of T-3, T-60, T-70 and T-80, etc.):
Figure GDA0002303737630000092
Figure GDA0002303737630000101
Figure GDA0002303737630000111
Figure GDA0002303737630000121
Figure GDA0002303737630000131
Figure GDA0002303737630000141
Figure GDA0002303737630000151
Figure GDA0002303737630000161
Figure GDA0002303737630000171
wherein, in T-71, T-72 and T-73, n is 1, 2 or 3 respectively and independently.
The specific sensitizer is preferably selected in the invention, the series of sensitizers are matched with the host material, and the sensitizers can effectively realize the up-conversion process (RISC) of triplet state to singlet state energy due to the small energy level difference between the singlet state and the triplet state, so that the energy is transferred to the dye for emission, and the internal quantum efficiency of 100 percent is realized.
Further, the thickness of the electron blocking layer is 1nm to 300nm, for example, 50nm, 100nm, 150nm, 200nm, 250nm, or the like;
and/or the hole transport layer has a thickness of 5nm to 300nm, such as 50nm, 100nm, 150nm, 200nm, 250nm, etc.;
and/or the thickness of the light-emitting layer is 1nm to 50nm, for example, 5nm, 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, and the like.
The thickness of a specific electron blocking layer is preferably selected, in the thickness range, hole carriers and electron carriers of the device can be well compounded in a light emitting layer of the device, and the light emitting efficiency of the device is influenced when the thickness is too small or too large;
the thickness of the hole transport layer is further optimized and matched with a specific electron blocking layer, so that the performance of the device is improved, and the starting voltage is reduced;
furthermore, the thickness of the luminescent layer is 1 nm-50 nm, and in the thickness range, current carriers can be well compounded in the luminescent layer of the device, so that the turn-on voltage can be further reduced, and the luminous efficiency can be improved. Either too little or too much thickness can degrade device performance.
Preferably, the fluorescent dye accounts for 0.1wt% to 20wt% of the material of the light emitting layer (doping concentration), such as 1wt%, 2wt%, 3wt%, 4wt%, 5wt%, 6wt%, 7wt%, 8wt%, 9wt%, 10wt%, 12wt%, 14wt%, 16wt%, 18wt%, etc.;
and/or the thermally activated delayed fluorescence sensitizer accounts for 1wt% to 99wt% of the material of the light emitting layer (doping concentration), such as 2wt%, 5wt%, 10wt%, 15wt%, 20wt%, 25wt%, 30wt%, 35wt%, 40wt%, 45wt%, 48wt%, 50wt%, 55wt%, 60wt%, 65wt%, 70wt%, 75wt%, 80wt%, 85wt%, 90wt%, 95wt%, etc. The luminescent layer material is composed of a host material, a thermally activated delayed fluorescence sensitizer and a fluorescent dye.
Preferably, the thermally activated delayed fluorescence sensitizer accounts for 1wt% to 50wt% of the material of the light emitting layer (doping concentration).
The invention preferably selects the specific doping concentration (0.1 wt% -20 wt%) of the fluorescent dye, and in the range, the performance of the device is more favorably improved, the exciton is compounded on the dye due to overhigh doping concentration, quenching occurs, the voltage, the service life and the efficiency of the device are influenced, and the energy transfer from the luminous layer of the device to the dye is incomplete due to overlow doping concentration, so the light color, the efficiency and the service life of the device are influenced.
The specific doping concentration (1 wt% -99 wt%) of the sensitizer is optimized, and in the range, the performance of the device is more favorably improved, the transmission property of a light emitting layer of the device is influenced due to overhigh doping concentration, aggregation quenching of the sensitizer is easy to generate, the service life and the efficiency of the device are influenced, and the photochromic property, the service life and the efficiency of the device are influenced due to incomplete energy transfer from a main body to the sensitizer due to overlow doping concentration.
Further, the organic layer further includes any one or a combination of at least two of a Hole Injection Layer (HIL), a Hole Blocking Layer (HBL), an Electron Transport Layer (ETL), and an Electron Injection Layer (EIL).
The electron transport material in the electron transport layer is selected from any one or at least two combinations (e.g., a combination of ET-1 and ET-2, a combination of ET-5, ET-10 and ET-16, a combination of ET-3, ET-30, ET-27 and ET-18, etc.) of the compounds represented by ET-1 to ET-57:
Figure GDA0002303737630000181
Figure GDA0002303737630000191
Figure GDA0002303737630000201
further, the hole injecting material in the hole injecting layer is selected from any one or at least two combinations of compounds represented by HT-1 to HT-34 or HI-1 to HI-3 (e.g., a combination of HI-1 and HI-2, a combination of HI-1, HI-2 and HI-3, etc.):
Figure GDA0002303737630000202
further, the hole-blocking material in the hole-blocking layer is selected from any one or at least two combinations of compounds represented by HB-1 to HB-6 (e.g., a combination of HB-1 and HB-2, a combination of HB-5, HB-6 and HB-4, a combination of HB-1, HB-3, HB-4 and HB-6, etc.):
Figure GDA0002303737630000211
further, the electron injecting material in the electron injecting layer is selected from any one or a combination of at least two of the following compounds (e.g., a combination of Liq and NaCl, csF, li) 2 O and Cs 2 CO 3 Combinations of Ca, mg, yb and Li, etc.):
Liq、LiF、NaCl、CsF、Li 2 O、Cs 2 CO 3 、BaO、Na、Li、Ca、Mg、Ag、Yb。
further, a substrate may be used under the first electrode or over the second electrode. The substrate is a glass or polymer material having excellent mechanical strength, thermal stability, water resistance, and transparency. In addition, a Thin Film Transistor (TFT) may be provided on a substrate for a display.
In an alternative embodiment, the first electrode may be formed by sputtering or depositing a material for the first electrode on the substrate. When the first electrode is used as an anode, indium Tin Oxide (ITO), indium Zinc Oxide (IZO), tin dioxide (SnO) may be used 2 ) And transparent conductive oxide materials such as zinc oxide (ZnO), and any combination thereof. When the first electrode is used as a cathode, a metal or an alloy such as magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), or any combination thereof can be used.
The invention also provides a preparation method of the organic electroluminescent device, which comprises the steps of depositing the first electrode, the organic layer and the second electrode on the substrate in sequence and then packaging. When the luminescent layer is prepared, the evaporation rate of the main material and the evaporation rate of the dye can be adjusted by a multi-source co-evaporation method so that the dye reaches a preset doping proportion.
The embodiment of the invention also provides a display device which comprises the organic electroluminescent device provided as above. The display device can be specifically a display device such as an OLED display, and any product or component with a display function including the display device, such as a television, a digital camera, a mobile phone, a tablet computer, and the like. The display device has the same advantages as the organic electroluminescent device compared with the prior art, and the description is omitted here.
The organic electroluminescent device according to the invention is further illustrated by the following specific examples.
Examples 1 to 20, comparative examples 1 to 6
Examples 1 to 20 and comparative examples 1 to 6 each provide an organic electroluminescent device having a device structure including an ITO anode, a Hole Injection Layer (HIL), a Hole Transport Layer (HTL), an Electron Blocking Layer (EBL), an emission layer (EML), a Hole Blocking Layer (HBL), an Electron Transport Layer (ETL), an Electron Injection Layer (EIL), and a cathode, in this order.
The material of the hole injection layer is HI-3, and the thickness is 2nm; the thickness of the hole transport layer is 30nm; the thickness of the electron blocking layer is 5nm; the material of the light-emitting layer comprises a host material, a sensitizer and a fluorescent dye, and the thickness of the light-emitting layer is 30nm. The material of the hole blocking layer is HB-4, and the thickness is 5nm. The material of the electron transport layer is ET-52, and the thickness is 25nm. The material of the electron injection layer was Liq (1 nm), and the cathode material was Al (150 nm).
The details of the hole transport material, the electron blocking material, the host material, the sensitizer, the dye, and the doping concentration (the doping concentration is based on the material of the light emitting layer) in the organic electroluminescent devices provided in examples 1 to 20 and comparative examples 1 to 6 are shown in table 1.
The organic electroluminescent devices of examples 1 to 20 and comparative examples 1 to 6 were prepared as follows:
(1) The glass plate coated with the ITO transparent conductive layer was sonicated in a commercial detergent, rinsed in deionized water, washed in acetone: ultrasonic degreasing in ethanol mixed solvent, baking in clean environment to completely remove water, cleaning with ultraviolet light and ozone, and bombarding the surface with low-energy cationic beam;
(2) Placing the glass substrate with the anode in a vacuum chamber, and vacuumizing to less than 1 × 10 -5 Pa, vacuum evaporating HI-3 on the anode layer film to be used as a hole injection layer, wherein the evaporation rate is 0.1nm/s, and the evaporation film thickness is 2nm;
(3) Vacuum evaporating a hole transport layer on the hole injection layer, wherein the evaporation rate is 0.1nm/s, and the total film thickness is 30nm;
(4) Vacuum evaporating an electron barrier layer on the hole transport layer, wherein the evaporation rate is 0.1nm/s, and the total film thickness is 5nm;
(5) And (3) vacuum evaporating a light-emitting layer on the electron blocking layer, wherein the light-emitting layer comprises a main material, a sensitizer and fluorescent dye, and the evaporation rate is 0.1nm/s and the thickness of the evaporation film is 30nm by using a multi-source co-evaporation method.
(6) Vacuum evaporating HB-4 as a hole blocking layer on the luminescent layer, wherein the evaporation rate is 0.1nm/s, and the total film thickness is 5nm;
(7) Evaporating ET-52 on the hole blocking layer in vacuum to be used as an electron transport layer, wherein the evaporation rate is 0.1nm/s, and the total film thickness is 25nm;
(8) Liq with the thickness of 1nm is vacuum-evaporated on the electron transport layer to be used as an electron injection layer, and an Al layer with the thickness of 150nm is used as a cathode of the device.
The specific structure of the organic electroluminescent device provided in example 1 is shown in fig. 1, and the device shown in fig. 1 comprises, from bottom to top, an ITO anode layer, a HIL, a HTL, an EBL, an EML, an HBL, an ETL, an EIL, and an Al cathode layer.
Example 21
The difference from example 5 is that the doping concentration of the fluorescent dye F-26 is 0.1wt%, the doping concentration of the sensitizer T-92 is 10wt%, the thickness of the light-emitting layer is 15nm, the thickness of the hole transport layer is 10nm, and the thickness of the electron blocking layer is 3nm.
Example 22
The difference from example 5 is that the doping concentration of the fluorescent dye F-26 is 20wt%, the doping concentration of the sensitizer T-92 is 80wt%, the thickness of the light-emitting layer is 50nm, the thickness of the hole transport layer is 150nm, and the thickness of the electron blocking layer is 45nm.
Example 23
The difference from example 5 is that the doping concentration of the sensitizer T-92 is 50wt%.
TABLE 1
Figure GDA0002303737630000221
Figure GDA0002303737630000231
Performance test
The turn-on voltage and current efficiency of the organic electroluminescent devices prepared in examples and comparative examples were measured at the same brightness using a PR 750 type photoradiometer of Photo Research corporation, a ST-86LA type brightness meter (photoelectric instrument factory of university of beijing) and a Keithley4200 test system. Specifically, the voltage was raised at a rate of 0.1V per second, and it was determined that the luminance of the organic electroluminescent device reached 1000cd/m 2 The voltage is the starting voltage (V), and the current density at the moment is measured; the ratio of brightness to current density is 1000cd/m 2 Current efficiency at luminance (cd/A);
the results of the above performance tests are shown in table 2.
TABLE 2
Figure GDA0002303737630000232
Figure GDA0002303737630000241
As can be seen from tables 1 and 2, the organic electroluminescent device provided by the invention effectively reduces the turn-on voltage of the device on the premise of good current efficiency, wherein the turn-on voltage is 4.6-5.6V, and the current efficiency is 16.6-27.1 cd/A.
Comparative examples 1 and 2 are different from example 1 only in that the electron blocking materials are EB-2 and EB-4, respectively, and the hole mobility of the electron blocking materials in comparative examples 1 and 2 is lower than that of the hole transporting material, the turn-on voltages of comparative examples 1 and 2 are significantly increased compared to example 1;
comparative example 3 is different from example 1 only in that the electron blocking material is EB-8, the HOMO energy level difference between the electron blocking material and the hole transport material is more than 0.3eV, and the turn-on voltage of comparative example 3 is obviously increased compared with example 1;
comparative example 4 is different from example 5 only in that the hole transport material is HT-19, and the HOMO energy level difference between the electron blocking material and the hole transport material is more than 0.3eV, the turn-on voltage of comparative example 4 is obviously increased compared with example 5;
in comparative examples 5 and 6, the hole mobility of the electron blocking material is lower than that of the hole transport material, the HOMO energy level difference between the electron blocking material and the hole transport material is larger than 0.3eV, and the turn-on voltages of comparative examples 5 and 6 are obviously higher than those of the examples;
the result proves that the invention can effectively reduce the turn-on voltage of the device and simultaneously keep good current efficiency by enabling the hole mobility of the electron blocking material to be higher than that of the hole transport material and enabling the HOMO energy level difference of the electron blocking material and the hole transport material to be less than or equal to 0.3eV, and the two conditions are not limited.
It is understood from comparative examples 11 to 14 that too high a doping concentration of the sensitizer or dye (examples 12 and 14) results in an increase in turn-on voltage and a decrease in current efficiency.
Testing of Material Properties
Hole mobility and HOMO level tests were performed on the electron blocking material and the hole transporting material used in the above examples and comparative examples, respectively, and the hole mobility of the materials was measured using the Time of Flight method (Time of Flight) using japanese spectroscopic/BUNKOUKEIKI CMM-250. HOMO energy level testing of the material was performed using electrochemical cyclic voltammetry with the test equipment Princeton VerSTAT3.
The test results are detailed in table 3.
TABLE 3
Figure GDA0002303737630000251
The present invention is illustrated in detail by the examples described above, but the present invention is not limited to the details described above, i.e., it is not intended that the present invention be implemented by relying on the details described above. It should be understood by those skilled in the art that any modification of the present invention, equivalent substitutions of the raw materials of the product of the present invention, addition of auxiliary components, selection of specific modes, etc., are within the scope and disclosure of the present invention.

Claims (10)

1. An organic electroluminescent device comprising a first electrode, a second electrode, and an organic layer between the first and second electrodes;
the organic layer comprises a hole transport layer, an electron blocking layer and a light emitting layer;
the luminescent layer contains a host material, a thermally activated delayed fluorescence sensitizer and a fluorescent dye;
the electron blocking layer contains an electron blocking material, and the hole transport layer contains a hole transport material;
the hole mobility of the electron blocking material is higher than that of the hole transport material, and the HOMO energy level difference between the electron blocking material and the hole transport material is less than or equal to 0.3eV;
the hole mobility of the electron blocking material is more than or equal to 1 multiplied by 10 -5 cm 2 V.s, and the hole mobility of the hole transport material is not less than 1X 10 -6 cm 2 /V·s；
The brightness of the organic electroluminescent device reaches 1000cd/m 2 When the voltage is in the range of 4.6-5.6V, the current efficiency is in the range of 16.6-27.1 cd/A.
2. The organic electroluminescent device according to claim 1, wherein the electron blocking material comprises any one or at least two combinations of compounds shown as EB-1 to EB-13:
Figure FDA0003779862450000011
Figure FDA0003779862450000021
3. the organic electroluminescent device according to claim 1, wherein the hole transport material comprises any one or at least two combinations of compounds selected from the group consisting of HT-1 to HT-34:
Figure FDA0003779862450000022
Figure FDA0003779862450000031
4. the organic electroluminescent device according to claim 1, wherein the host material comprises any one or at least two combinations of compounds shown as TDH1 to TDH 37:
Figure FDA0003779862450000041
Figure FDA0003779862450000051
5. the organic electroluminescent device according to claim 1, wherein the fluorescent dye is selected from any one or at least two combinations of compounds shown as F-1 to F-32:
Figure FDA0003779862450000052
Figure FDA0003779862450000061
Figure FDA0003779862450000071
6. the organic electroluminescent device according to claim 1, wherein the thermally activated delayed fluorescence sensitizer comprises any one or at least two combinations of compounds shown as T-1 to T-99:
Figure FDA0003779862450000081
Figure FDA0003779862450000091
Figure FDA0003779862450000101
Figure FDA0003779862450000111
Figure FDA0003779862450000121
Figure FDA0003779862450000131
Figure FDA0003779862450000141
Figure FDA0003779862450000151
wherein, in T-71, T-72 and T-73, n is 1, 2 or 3 respectively and independently.
7. The organic electroluminescent device according to claim 1, wherein the electron blocking layer has a thickness of 1nm to 300nm;
and/or the thickness of the hole transport layer is 5 nm-300 nm;
and/or the thickness of the luminescent layer is 1 nm-50 nm.
8. The organic electroluminescent device according to claim 1, wherein the fluorescent dye accounts for 0.1wt% to 20wt% of the material of the luminescent layer;
and/or the thermally activated delayed fluorescence sensitizer accounts for 1-99 wt% of the material of the luminescent layer.
9. The organic electroluminescent device according to claim 1, wherein the thermally activated delayed fluorescence sensitizer accounts for 1wt% to 50wt% of the material of the light emitting layer.
10. A display device comprising the organic electroluminescent element according to any one of claims 1 to 9.
CN201911205731.9A 2019-11-29 2019-11-29 Organic electroluminescent device and display device Active CN110931649B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201911205731.9A CN110931649B (en) 2019-11-29 2019-11-29 Organic electroluminescent device and display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201911205731.9A CN110931649B (en) 2019-11-29 2019-11-29 Organic electroluminescent device and display device

Publications (2)

Publication Number Publication Date
CN110931649A CN110931649A (en) 2020-03-27
CN110931649B true CN110931649B (en) 2022-11-15

Family

ID=69848014

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201911205731.9A Active CN110931649B (en) 2019-11-29 2019-11-29 Organic electroluminescent device and display device

Country Status (1)

Country Link
CN (1) CN110931649B (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111640878B (en) * 2020-06-11 2023-04-18 京东方科技集团股份有限公司 Organic light-emitting material, organic electroluminescent element, and display device
CN111864095B (en) * 2020-07-23 2023-04-28 京东方科技集团股份有限公司 Organic light-emitting diode structure and display device
CN111933811B (en) * 2020-07-31 2022-09-13 昆山工研院新型平板显示技术中心有限公司 Organic light-emitting device and display device
CN111916573B (en) * 2020-08-19 2022-07-12 昆山工研院新型平板显示技术中心有限公司 Organic electroluminescent device and display device
CN114256429B (en) * 2020-09-25 2024-06-07 江苏三月科技股份有限公司 Sensitized fluorescent organic electroluminescent device and application thereof
CN112447923B (en) * 2020-11-27 2024-04-16 北京维信诺科技有限公司 Organic light emitting diode, preparation method thereof, display panel and display device
US20230380278A1 (en) * 2021-01-06 2023-11-23 Boe Technology Group Co., Ltd. Light-emitting diode, display panel, and display device
US20230371365A1 (en) * 2021-01-26 2023-11-16 Boe Technology Group Co., Ltd. Organic Light Emitting Device and Display Device
CN113066938B (en) * 2021-03-23 2023-03-21 京东方科技集团股份有限公司 Light emitting device, display substrate and display apparatus
CN113328045B (en) * 2021-05-28 2023-09-26 京东方科技集团股份有限公司 Light emitting device and light emitting apparatus
WO2022260118A1 (en) * 2021-06-10 2022-12-15 出光興産株式会社 Organic electroluminescent element, organic electroluminescent display device, and electronic equipment
WO2022260117A1 (en) * 2021-06-10 2022-12-15 出光興産株式会社 Organic electroluminescent element, organic electroluminescent display device, and electronic equipment
CN113410405B (en) * 2021-06-30 2023-04-18 昆山国显光电有限公司 Organic electroluminescent device and display device
CN113555508B (en) * 2021-07-16 2022-10-04 京东方科技集团股份有限公司 Fluorescent light-emitting device, preparation method thereof, display panel and display device
CN113555510B (en) * 2021-07-21 2024-04-05 京东方科技集团股份有限公司 Organic electroluminescent device, display panel and display device
CN113629202A (en) * 2021-07-22 2021-11-09 武汉华星光电半导体显示技术有限公司 Display panel
CN120113384A (en) * 2023-08-10 2025-06-06 京东方科技集团股份有限公司 Organic electroluminescent device and display substrate

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011009688A (en) * 2008-12-01 2011-01-13 Semiconductor Energy Lab Co Ltd Light-emitting element, light-emitting device, lighting system, and electronic equipment
CN102403462A (en) * 2010-09-13 2012-04-04 周卓辉 Organic light emitting diode and method for manufacturing the same
CN104270847A (en) * 2014-10-30 2015-01-07 中国科学院长春应用化学研究所 A kind of white organic electroluminescence device and preparation method thereof
EP3174117A1 (en) * 2015-11-30 2017-05-31 LG Display Co., Ltd. Organic light emitting display device
CN106910830A (en) * 2015-12-23 2017-06-30 昆山工研院新型平板显示技术中心有限公司 A kind of organic electroluminescence device and preparation method thereof
CN108292708A (en) * 2015-09-25 2018-07-17 保土谷化学工业株式会社 Organic electroluminescence device
EP3364477A1 (en) * 2017-02-20 2018-08-22 Novaled GmbH Electronic semiconducting device and method for preparing the electronic semiconducting device
CN108821985A (en) * 2018-06-01 2018-11-16 长春海谱润斯科技有限公司 A kind of aromatic amine derivant and its organic electroluminescence device
CN109524558A (en) * 2018-12-13 2019-03-26 云谷（固安）科技有限公司 A kind of organic electroluminescence device and display device
CN109755400A (en) * 2018-12-28 2019-05-14 云谷（固安）科技有限公司 A kind of light-emitting component and display panel
CN110021707A (en) * 2017-12-27 2019-07-16 三星Sdi株式会社 Organic photoelectric device and display device
CN110183333A (en) * 2019-06-19 2019-08-30 陕西莱特光电材料股份有限公司 A kind of electroluminescent organic material and the organic electroluminescence device comprising the material
EP3567646A1 (en) * 2017-06-30 2019-11-13 Kunshan Go-Visionox Opto-Electronics Co., Ltd. Organic electroluminescent device and manufacturing method therefor
CN110492007A (en) * 2018-05-14 2019-11-22 江苏三月光电科技有限公司 A kind of acridine compounds and its application in organic electroluminescence devices

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007250718A (en) * 2006-03-15 2007-09-27 Toppan Printing Co Ltd Electroluminescent device and manufacturing method thereof

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011009688A (en) * 2008-12-01 2011-01-13 Semiconductor Energy Lab Co Ltd Light-emitting element, light-emitting device, lighting system, and electronic equipment
CN102403462A (en) * 2010-09-13 2012-04-04 周卓辉 Organic light emitting diode and method for manufacturing the same
CN104270847A (en) * 2014-10-30 2015-01-07 中国科学院长春应用化学研究所 A kind of white organic electroluminescence device and preparation method thereof
CN108292708A (en) * 2015-09-25 2018-07-17 保土谷化学工业株式会社 Organic electroluminescence device
EP3174117A1 (en) * 2015-11-30 2017-05-31 LG Display Co., Ltd. Organic light emitting display device
CN106910830A (en) * 2015-12-23 2017-06-30 昆山工研院新型平板显示技术中心有限公司 A kind of organic electroluminescence device and preparation method thereof
EP3364477A1 (en) * 2017-02-20 2018-08-22 Novaled GmbH Electronic semiconducting device and method for preparing the electronic semiconducting device
EP3567646A1 (en) * 2017-06-30 2019-11-13 Kunshan Go-Visionox Opto-Electronics Co., Ltd. Organic electroluminescent device and manufacturing method therefor
CN110021707A (en) * 2017-12-27 2019-07-16 三星Sdi株式会社 Organic photoelectric device and display device
CN110492007A (en) * 2018-05-14 2019-11-22 江苏三月光电科技有限公司 A kind of acridine compounds and its application in organic electroluminescence devices
CN108821985A (en) * 2018-06-01 2018-11-16 长春海谱润斯科技有限公司 A kind of aromatic amine derivant and its organic electroluminescence device
CN109524558A (en) * 2018-12-13 2019-03-26 云谷（固安）科技有限公司 A kind of organic electroluminescence device and display device
CN109755400A (en) * 2018-12-28 2019-05-14 云谷（固安）科技有限公司 A kind of light-emitting component and display panel
CN110183333A (en) * 2019-06-19 2019-08-30 陕西莱特光电材料股份有限公司 A kind of electroluminescent organic material and the organic electroluminescence device comprising the material

Also Published As

Publication number Publication date
CN110931649A (en) 2020-03-27

Similar Documents

Publication Publication Date Title
CN110931649B (en) Organic electroluminescent device and display device
CN110911575B (en) Organic electroluminescent device and display device
CN111864098B (en) Organic electroluminescent device and display device
CN110911576B (en) Organic electroluminescent device and display device
CN111916573B (en) Organic electroluminescent device and display device
WO2020042608A1 (en) Organic electroluminescent device and preparation method therefor and display device
US20200203610A1 (en) Organic electroluminescent device and preparation method and display apparatus thereof
TWI640532B (en) Phosphorescent organic electroluminescent device
WO2020042606A1 (en) Organic electroluminescent device, preparation method and display device
CN109378392B (en) Organic electroluminescent device and display device
CN108832008B (en) Application of exciplex in organic light-emitting diode
CN104835916A (en) Highly-efficient organic electroluminescent device based on fluorescence doped luminescent layer
CN110335954B (en) Efficient and stable white light organic electroluminescent device and preparation method thereof
CN102157703B (en) OLED (Organic Light Emitting Diode) device for increasing brightness
CN112467058B (en) A ternary exciplex composite material host and its OLED device preparation
CN114447243B (en) An organic electroluminescent device comprising a light-emitting layer and a hole transport region
WO2025036497A1 (en) Electroluminescent material composition and organic electroluminescent device
CN111224008A (en) Organic electroluminescent device and display device
CN112382729B (en) Blue light fluorescence organic light emitting diode with TTA process-containing hybrid local charge transfer material as main body and preparation method thereof
CN111933811A (en) Organic electroluminescent device and display device
CN111864093B (en) A composition for electron transport layer, electron transport layer and optoelectronic device
CN111180599B (en) Mixture, organic electroluminescent device containing mixture and application of mixture
CN101510588B (en) Organic electroluminescent device
KR100894649B1 (en) Organic light emitting diode
CN119300629A (en) A stacked organic light-emitting device and its application

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant