CN110475085A - Reading circuit and its control method, the imaging sensor of imaging sensor - Google Patents
Reading circuit and its control method, the imaging sensor of imaging sensor Download PDFInfo
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
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Abstract
A kind of reading circuit and its control method, imaging sensor of imaging sensor, the reading circuit include: master switch element, and first end couples pixel unit；Voltage storage cell group, including first voltage storage unit, second voltage storage unit and tertiary voltage storage unit in parallel, the second end of the input terminal coupling master switch element of first voltage storage unit, second voltage storage unit and tertiary voltage storage unit；Difference amplifier, first input end couple the output end of target voltage storage unit, and the second input terminal couples the output end of other voltage storage cells；Comparator, first input end couple the output end of difference amplifier, the second input end grounding, and output end couples the input terminal of analog-digital converter；Rp unit, input terminal couple the output end of difference amplifier, and output end couples the input terminal of analog-digital converter.Technical solution of the present invention is able to ascend the reading efficiency of imaging sensor.
Description
Technical field
The present invention relates to technical field of integrated circuits more particularly to the reading circuits and its controlling party of a kind of imaging sensor
Method, imaging sensor.
Background technique
Imaging sensor is a kind of electrooptical device.Imaging sensor in shooting process, by optical signal obtained
It is converted into electric signal, and in memory by digitized processing storage.Currently for dynamic, continuous object, imaging sensor
Need to obtain the information of captured image frame by frame, and the later period carries out image processing frame by frame.In order to obtain high speed
The object of movement, while avoid generating in object of which movement obscures, and imaging sensor is needed to possess higher frame per second.
Existing imaging sensor is read in circuit, all can be by the frame for each frame image of imaging sensor shooting
The signal of image all exports, and carries out full frame refresh process frame by frame on the display screen.
But high frame per second equally brings high data volume, transmission and the pressure handled increase with it.Existing image sensing
Device reading circuit needs a large amount of data operation in refresh process frame by frame, limits frame number, is unable to satisfy capture rate and place
The demand for managing speed, to cannot achieve quick target acquistion.
Summary of the invention
Present invention solves the technical problem that being how to promote the reading efficiency of imaging sensor, meet the high frame of imaging sensor
The demand of rate.
In order to solve the above technical problems, the embodiment of the present invention provides a kind of reading circuit of imaging sensor, image sensing
The reading circuit of device includes: pixel unit and analog-digital converter, master switch element, the first end coupling pixel unit；Electricity
Memory cell group is pressed, including first voltage storage unit, second voltage storage unit and tertiary voltage storage unit in parallel, institute
The input terminal for stating first voltage storage unit, second voltage storage unit and tertiary voltage storage unit couples the master switch member
The second end of part；Difference amplifier, first input end couple the output end of target voltage storage unit, the second input terminal coupling
The output end of other voltage storage cells is connect, the target voltage storage unit is the first voltage storage unit, the second electricity
Press one of storage unit and tertiary voltage storage unit, other described voltage storage cells be target voltage storage unit with
Other outer two voltage storage cells；Comparator, first input end couple the output end of the difference amplifier, and second
Input end grounding, output end couple the input terminal of the analog-digital converter；Rp unit, input terminal couple the difference and put
The output end of big device, output end couple the input terminal of the analog-digital converter, and the rp unit in the difference to put
When the output signal of big device is negative voltage, reverse phase is carried out to the output signal of the difference amplifier；Wherein, the comparator
The output signal of output signal and the output signal of the analog-digital converter as the reading circuit.
Optionally, the rp unit includes: inverting amplifier, and input terminal couples the output of the difference amplifier
End, output end couple the input terminal of the analog-digital converter；Reverse phase control switch element, first end couple the difference and put
The output end of big device, second end couple the input terminal of the analog-digital converter.
Optionally, when the output signal of the difference amplifier is negative, the reverse phase control switch element OFF；The difference
The output signal for dividing amplifier is timing, the reverse phase control switch element conductive.
Optionally, the output signal of the reading circuit includes sign bit and data bit, and the sign bit is the comparison
The output signal of device, the data bit are the output signal of the analog-digital converter.
Optionally, the first voltage storage unit includes first switching element, first capacitor and second switch element, institute
The first end for stating first switching element couples the second end of the master switch element, described in the first end coupling of the first capacitor
The second end of first switching element, the second end ground connection of the first capacitor, the first end of the second switch element couple institute
The first end of first capacitor is stated, the second end of the second switch element couples the first input end of the difference amplifier；Institute
Stating second voltage storage unit includes third switch element, the second capacitor and the 4th switch element, the third switch element
First end couples the second end of the master switch element, and the first end of second capacitor couples the of the third switch element
Two ends, the second end ground connection of second capacitor, the first end of the 4th switch element couple the first of second capacitor
End, the second end of the 4th switch element couple the second input terminal of the difference amplifier；The tertiary voltage storage is single
Member includes the 5th switch element, third capacitor and the 6th switch element, and the first end coupling of the 5th switch element is described total
The second end of switch element, the first end of the third capacitor couple the second end of the 5th switch element, the third electricity
The second end of appearance is grounded, and the first end of the 6th switch element couples the first end of the third capacitor, the 6th switch
The second end of element couples the second input terminal of the difference amplifier.
In order to solve the above technical problems, the embodiment of the invention also discloses a kind of control method, the control method includes:
After the completion of nth frame image exposure, the master switch element conductive is controlled using timing control signal, N is positive integer；Described
During master switch element conductive, the first voltage storage unit and the second voltage are controlled using the timing control signal
Storage unit stores the exposure voltage of the nth frame image, the exposure electricity of the tertiary voltage storage unit storage N-1 frame image
Pressure；The master switch element OFF is controlled using the timing control signal；Described the is controlled using the timing control signal
One voltage storage cell and the tertiary voltage storage unit export exposure voltage to the difference amplifier.
Optionally, the control method further include: after the completion of N+1 frame image exposure, believed using the timing control
Number control master switch element conductive；During the master switch element conductive, institute is controlled using the timing control signal
It states first voltage storage unit and the tertiary voltage storage unit stores the exposure voltage of the N+1 frame image, described
The exposure voltage of two voltage storage cells storage N frame image；The master switch element is controlled using the timing control signal to close
It is disconnected；The first voltage storage unit and second voltage storage unit output exposure are controlled using the timing control signal
Voltage is to the difference amplifier.
Optionally, the first voltage storage unit includes first switching element, first capacitor and second switch element, institute
The first end for stating first switching element couples the second end of the master switch element, described in the first end coupling of the first capacitor
The second end of first switching element, the second end ground connection of the first capacitor, the first end of the second switch element couple institute
The first end of first capacitor is stated, the second end of the second switch element couples the first input end of the difference amplifier；Institute
Stating second voltage storage unit includes third switch element, the second capacitor and the 4th switch element, the third switch element
First end couples the second end of the master switch element, and the first end of second capacitor couples the of the third switch element
Two ends, the second end ground connection of second capacitor, the first end of the 4th switch element couple the first of second capacitor
End, the second end of the 4th switch element couple the second input terminal of the difference amplifier；The tertiary voltage storage is single
Member includes the 5th switch element, third capacitor and the 6th switch element, and the first end coupling of the 5th switch element is described total
The second end of switch element, the first end of the third capacitor couple the second end of the 5th switch element, the third electricity
The second end of appearance is grounded, and the first end of the 6th switch element couples the first end of the third capacitor, the 6th switch
The second end of element couples the second input terminal of the difference amplifier.
Optionally, described to control the first voltage storage unit and the second voltage using the timing control signal
The exposure voltage that storage unit stores the nth frame image includes: to control the first switch using the timing control signal
Element and the third switching elements conductive；It is described using the timing control signal control the first voltage storage unit and
Tertiary voltage storage unit output exposure voltage to the difference amplifier includes: to be controlled using the timing control signal
The first switching element and third switch element shutdown, while controlling the second switch element and the 6th switch
Element conductive.
Optionally, the control first voltage storage unit and the tertiary voltage storage unit store the N+
The exposure voltage of 1 frame image includes: to control the first switching element and the 5th switch element using the timing control signal
Conducting；It is described defeated using the timing control signal control first voltage storage unit and the second voltage storage unit
Exposure voltage to the difference amplifier includes: to control the first switching element and the 5th using the timing control signal out
Switch element shutdown, while controlling the second switch element and the 4th switching elements conductive.
The embodiment of the invention also discloses a kind of imaging sensor, described image sensor includes the imaging sensor
Reading circuit.
Compared with prior art, the technical solution of the embodiment of the present invention has the advantages that
In technical solution of the present invention, the reading circuit of imaging sensor may include voltage storage cell group, for storing
Pixel unit output adjacent two field pictures voltage signal, difference amplifier by with each voltage in voltage storage cell group
The coupling relationship of storage unit calculates the voltage difference of the voltage signal of adjacent two field pictures, since voltage difference is less than each frame image
Voltage signal so that voltage of the analog-digital converter (such as successive approximation analog-to-digital conversion) when carrying out analog-to-digital conversion compares
Number is reduced, and the overall processing time of analog-digital converter is less, and then promotes the reading speed of reading circuit；Further, it is also possible to
So that analog-digital converter output signal data amount is smaller (such as shorter character string), to promote efficiency of transmission, meet image biography
Demand of the sensor to high frame per second.
Further, the rp unit includes: inverting amplifier, and input terminal couples the output of the difference amplifier
End, output end couple the input terminal of the analog-digital converter；Reverse phase control switch element, first end couple the difference and put
The output end of big device, second end couple the input terminal of the analog-digital converter.In technical solution of the present invention, for analog-to-digital conversion
The case where device does not support negative voltage signal to input is not changing since the output signal of difference amplifier may have negative
Under the premise of former analog-digital converter, it can use inverting amplifier and reverse phase control switch element realized to the defeated of difference amplifier
The reverse phase of signal out, namely the output when the output signal of the difference amplifier is negative voltage, to the difference amplifier
Signal carries out reverse phase.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of the reading circuit of imaging sensor of the embodiment of the present invention；
Fig. 2 is the structural schematic diagram of the reading circuit of another kind imaging sensor of the embodiment of the present invention；
Fig. 3 is a kind of flow chart of the control method of the reading circuit based on imaging sensor of the embodiment of the present invention；
Fig. 4 is a kind of timing diagram for controlling signal of the embodiment of the present invention；
Fig. 5 is a kind of partial process view of the control method of the reading circuit based on imaging sensor of the embodiment of the present invention.
Specific embodiment
As described in the background art, high frame per second equally brings high data volume, and transmission and the pressure handled increase with it.It is existing
Some imaging sensors read circuit and need a large amount of data operation in refresh process frame by frame, limit frame number, are unable to satisfy
The demand of capture rate and processing speed, to cannot achieve quick target acquistion.
In technical solution of the present invention, the reading circuit of imaging sensor may include voltage storage cell group, for storing
Pixel unit output adjacent two field pictures voltage signal, difference amplifier by with each voltage in voltage storage cell group
The coupling relationship of storage unit calculates the voltage difference of the voltage signal of adjacent two field pictures, since voltage difference is less than each frame image
Voltage signal, therefore compared with the existing technology in the voltage signal of each frame image is handled, can reduce at data
Reason amount so that the processing speed of analog-digital converter gets a promotion, and then promotes the reading speed of reading circuit；Further, it is also possible to
So that analog-digital converter output signal data amount is smaller (such as shorter character string), to promote efficiency of transmission, meet image biography
Demand of the sensor to high frame per second.
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
Fig. 1 is a kind of structural schematic diagram of the reading circuit of imaging sensor of the embodiment of the present invention.
As shown in Figure 1, imaging sensor may include pixel unit 10 and analog-digital converter 20.Wherein, pixel unit 10
The voltage signal of every frame image can be exported, the analog signal of input can be converted to digital signal progress by analog-digital converter 20
Output.
The reading circuit of imaging sensor can also be put including master switch element Tsel, voltage storage cell group 30, difference
Big device M0.Wherein, the first end of master switch element Tsel couples the pixel unit 10.Voltage storage cell group 30 includes parallel connection
First voltage storage unit 301, second voltage storage unit 302 and tertiary voltage storage unit 303, the first voltage deposits
The input terminal of storage unit 301, second voltage storage unit 302 and tertiary voltage storage unit 303 couples the master switch member
The second end of part Tsel.The output end of the first input end coupling target voltage storage unit of difference amplifier M0, differential amplification
The second input terminal of device M0 couples the output end of other voltage storage cells, and the target voltage storage unit is first electricity
One of storage unit 301, second voltage storage unit 302 and tertiary voltage storage unit 303 are pressed, other described voltages are deposited
Storage unit is other two voltage storage cells other than target voltage storage unit.
In the present embodiment, whether the voltage signal that master switch element Tsel can control pixel unit 10, which is input to voltage, is deposited
Storage unit group 30.Voltage storage cell group 30 can store the voltage signal namely target voltage storage list of adjacent two field pictures
Member and other voltage storage cells can store the voltage signals of adjacent two field pictures, such as target voltage storage unit storage the
The voltage signal of N frame image, other voltage storage cells store the voltage signal of N+1 frame image, and N is positive integer.
Since the first input end of difference amplifier M0 and the second input terminal are respectively coupled to target voltage storage unit and its
His voltage storage cell, therefore difference amplifier M0 can carry out additive operation to the voltage signal of adjacent two field pictures, namely
Calculate the voltage difference of the voltage signal of adjacent two field pictures.
In the present embodiment, it is laggard that analog-digital converter 20 is converted to digital signal to the calculated voltage difference of difference amplifier M0
Row output, subsequent display module can use the digital signal and carry out frame image refreshing.The digital signal can indicate current
The difference of pixel and pixel in previous frame image in frame image.Specifically, display module, can be preceding when executing refresh operation
In one frame image on the basis of the pixel value of pixel, the digital signal is increased or decreased, to obtain the picture of pixel in current frame image
Element value.
Since voltage difference is less than the voltage signal of each frame image, so that analog-digital converter (such as successive approximation mould
Number conversion) when carrying out analog-to-digital conversion voltage number of comparisons reduction, the overall processing time of analog-digital converter is less, Jin Erti
Rise the reading speed of reading circuit.Further, it is also possible to make smaller (such as shorter character of analog-digital converter output signal data amount
String), to promote efficiency of transmission, meet the needs of imaging sensor is to high frame per second.
With continued reference to shown in Fig. 1, the reading circuit of imaging sensor can also include comparator M2 and rp unit 40.Than
First input end compared with device M2 couples the output end of the difference amplifier M0, and the second input end grounding of comparator M2 compares
The output end of device M2 couples the input terminal of the analog-digital converter 20.The input terminal of rp unit 40 couples the difference amplifier
The output end of M0, the output end of rp unit 40 couple the input terminal of the analog-digital converter 20, the rp unit 40 to
When the output signal of the difference amplifier M0 is negative voltage, reverse phase is carried out to the output signal of the difference amplifier M0.
In the present embodiment, comparator M2 can the output signal to difference amplifier M0 be compared with 0, so as to sentence
It is disconnected go out difference amplifier M0 output signal it is positive and negative.For example, indicating difference amplifier when the output signal of comparator M2 is 1
The output signal of M0 is greater than 0；Conversely, indicating that the output signal of difference amplifier M0 is less than when the output signal of comparator M2 is 0
0；Or be also possible to comparator M2 output signal be 0 when, indicate difference amplifier M0 output signal be greater than 0；Conversely,
When the output signal of comparator M2 is 1, indicate the output signal of difference amplifier M0 less than 0.
Since analog-digital converter 20 does not support the input of negative voltage signal, and the output signal of difference amplifier M0 may have
Negative, therefore when the output signal M0 of the difference amplifier is negative voltage, it can be by rp unit 40 to differential amplification
The output signal of device M0 carries out reverse phase.Correspondingly, when the output signal M0 of the difference amplifier is positive voltage, not to difference
The output signal of amplifier M0 carries out reverse phase, directly exports the output signal of difference amplifier M0 to analog-digital converter 20.
In this case, since whether the output signal of comparator M2 affects to the output signal of difference amplifier M0
Carry out reverse phase, it is therefore desirable to the output signal of comparator M2 is exported, in other words, the output signal of the comparator M2 with
Output signal of the output signal of the analog-digital converter 20 collectively as the reading circuit.For example, the output of comparator M2
Signal is 1, and the output signal of analog-digital converter 20 is 0011, then the output signal of reading circuit is 10011.
In a non-limiting embodiment of the invention, referring to figure 2., the rp unit 40 may include reverse phase amplification
Device M1 and reverse phase control switch element K1.Wherein, the input terminal of inverting amplifier M1 couples the output of the difference amplifier M0
End, the output end of inverting amplifier M1 couple the input terminal of the analog-digital converter 20；The first of reverse phase control switch element K1
End couples the output end of the difference amplifier M0, and the second end of reverse phase control switch element K1 couples the analog-digital converter 20
Input terminal.
In specific implementation, when the output signal of difference amplifier M0 is negative voltage, reverse phase control switch element can control
K1 is disconnected, and the output signal of such difference amplifier M0 can flow through inverting amplifier M1, and inverting amplifier M1 can put difference
The output signal of big device M0 exports after carrying out reverse phase to the input terminal of analog-digital converter 20.
Correspondingly, when the output signal of difference amplifier M0 is positive voltage, it can control reverse phase control switch element K1 and lead
Logical, the output signal of such difference amplifier M0 can be directly inputted into the input terminal of analog-digital converter 20, to guarantee to be input to mould
The voltage signal of number converter 20 is always positive voltage.
The embodiment of the present invention can be on or off by controlling the state of reverse phase control switch element K1, be to control
The no output signal to difference amplifier carries out reverse phase, and it is always positive electricity that guarantee, which is input to the voltage signal of analog-digital converter 20,
Pressure, promotes the working performance of the reading circuit of imaging sensor.
In a non-limiting embodiment of the invention, the output signal of the reading circuit includes sign bit and data
Position, the sign bit are the output signal of the comparator M2, and the data bit is the output signal of the analog-digital converter 20.
Whether the output signal of difference amplifier M0 is carried out as previously described, because the output signal of comparator M2 affects
Reverse phase, it is therefore desirable to export the output signal of comparator M2.Wherein, sign bit indicates positive and negative, the data bit table of data
Show the voltage difference of adjacent two field pictures.For example, when the output signal of reading circuit is 10011, sign bit 1 indicates to read electricity
The output signal on road is negative；Data bit is 0011, indicates that voltage difference is 3, which can then indicate in original pixel value
On the basis of subtract 3.
In a non-limiting embodiment of the invention, with continued reference to Fig. 2, the first voltage storage unit 101 can be with
Including first switching element TX1, first capacitor C1 and second switch element TX2, the first end coupling of the first switching element TX1
The second end of the master switch element Tsel is connect, the first end of the first capacitor C1 couples the first switching element TX1's
Second end, the second end ground connection of the first capacitor C1, the first end of the second switch element TX2 couple the first capacitor
The second end of the first end of C1, the second switch element TX2 couples the first input end of the difference amplifier M0；
The second voltage storage unit 102 may include third switch element TX3, the second capacitor C2 and the 4th switch member
Part TX4, the first end of the third switch element TX3 couple the second end of the master switch element Tsel, second capacitor
The first end of C2 couples the second end of the third switch element TX3, and the second end of the second capacitor C2 is grounded, and the described 4th
The first end of switch element TX4 couples the first end of the second capacitor C2, the second end coupling of the 4th switch element TX4
The second input terminal of the difference amplifier M0；
The tertiary voltage storage unit 103 may include the 5th switch element TX5, third capacitor C3 and the 6th switch member
Part TX6, the first end of the 5th switch element TX5 couple the second end of the master switch element Tsel, the third capacitor
The first end of C3 couples the second end of the 5th switch element TX5, and the second end of the third capacitor C3 is grounded, and the described 6th
The first end of switch element TX6 couples the first end of the third capacitor C3, the second end coupling of the 6th switch element TX5
The second input terminal of the difference amplifier M0.
In specific implementation, first capacitor C1 can be used for storing the voltage value that current pixel is exported, the second capacitor C2,
Three capacitor C3 can be used for storing the voltage value of voltage value or previous frame before pixel exposure for calculus of differences.
It should be noted that the first switching element TX1, the second switch element TX2, third switch element TX3,
4th switch element TX4, the 5th switch element TX5 and the 6th switch element TX6 can be metal-oxide-semiconductor.The concrete type of metal-oxide-semiconductor can
To be configured according to actual application environment, the embodiment of the present invention to this with no restriction.
In an embodiment of the invention, the control method of the reading circuit based on imaging sensor is also disclosed, with reality
Now to the reading of the voltage signal of imaging sensor.
The control method may comprise steps of:
Step S301: after the completion of nth frame image exposure, the master switch element is controlled using timing control signal and is led
Logical, N is positive integer；
Step S302: during the master switch element conductive, first electricity is controlled using the timing control signal
Pressure storage unit and the second voltage storage unit store the exposure voltage of the nth frame image, the tertiary voltage storage
The exposure voltage of unit storage N-1 frame image；
Step S303: the master switch element OFF is controlled using the timing control signal；
Step S304: the first voltage storage unit is controlled using the timing control signal and the tertiary voltage is deposited
Storage unit exports exposure voltage to the difference amplifier.
It should be pointed out that the serial number of each step does not represent the limit to the execution sequence of each step in the present embodiment
It is fixed.
Together referring to control signal timing diagram shown in Fig. 4, exposure after the completion of nth frame image exposure namely shown in Fig. 4
After the completion of stage 1, pixel unit 10 obtains the voltage signal of nth frame image.In the T1 stage, the timing control of master switch element Tsel
Signal processed controls the master switch element Tsel conducting.During master switch element Tsel conducting, believed using timing control
Number TX1 and timing control signal TX3 controls the first voltage storage unit 101 and the second voltage storage unit 102 is deposited
The exposure voltage of the nth frame image is stored up, the exposure voltage of N-1 frame image is stored in advance in the tertiary voltage storage unit 103.
Then, the timing control signal of master switch element Tsel controls the master switch element Tsel shutdown, utilizes timing control signal
TX1 and timing control signal TX6 controls the first voltage storage unit 101 and the tertiary voltage storage unit 103 output
Exposure voltage is to the difference amplifier M0.
At this point, difference amplifier M0 can the exposure voltage of exposure voltage and N-1 frame image to nth frame image calculate
Difference.The difference is positive by comparator M2 judgement, then is directly output to analog-digital converter 20；Otherwise, the difference is by comparing
Device M2 judgement is negative, and is exported again after 40 reverse phase of rp unit to analog-digital converter 20.
In a non-limiting embodiment of the invention, referring to figure 5., the control method be may comprise steps of:
Step S501: after the completion of N+1 frame image exposure, the master switch member is controlled using the timing control signal
Part conducting；
Step S502: during the master switch element conductive, first electricity is controlled using the timing control signal
Pressure storage unit and the tertiary voltage storage unit store the exposure voltage of the N+1 frame image, and the second voltage is deposited
The exposure voltage of storage unit storage N frame image；
Step S503: the master switch element OFF is controlled using the timing control signal；
Step S504: the first voltage storage unit is controlled using the timing control signal and the second voltage is deposited
Storage unit exports exposure voltage to the difference amplifier.
It is that difference is read out to the voltage signal of nth frame image with previous embodiment, the embodiment of the present invention is to N+1
The voltage signal of frame image is read out.
The exposure voltage of nth frame image is stored in first voltage storage unit 101 and the second electricity with previous embodiment
It presses unlike storage unit 102, the exposure voltage of N+1 frame image will be stored in first voltage storage unit 101 and described
Tertiary voltage storage unit 103.
Each step shown in fig. 5 and each step shown in Fig. 4 are a complete read cycle, by periodically
Each step shown in above-mentioned Fig. 4 and Fig. 5 is executed, the reading of the voltage signal to the image of successive frame may be implemented.
In a specific embodiment of the invention, please with reference to Fig. 2, step S302 be may comprise steps of: benefit
The first switching element and the third switching elements conductive are controlled with the timing control signal；Step S304 may include
Following steps: the first switching element is controlled using the timing control signal and the third switch element turns off, simultaneously
Control the second switch element and the 6th switching elements conductive.
In the present embodiment, with continued reference to Fig. 2, the exposure voltage of nth frame image is stored in first voltage storage unit 101
It with second voltage storage unit 102 is realized by control first switching element TX1 and third switch element TX3 conducting,
Correspondingly, the exposure voltage of the exposure voltage of nth frame image and N-1 frame image is exported to difference amplifier M0 is to pass through control
First switching element TX1 and third switch element TX3 shutdown, while controlling the second switch element TX2 and described the
Six switch element TX6 are connected to realize.
In another specific embodiment of the invention, step S502 be may comprise steps of: utilize the timing control
Signal processed controls the first switching element and the 5th switching elements conductive；Step S504 may comprise steps of: utilize institute
It states timing control signal and controls the first switching element and the shutdown of the 5th switch element, while controlling the second switch element
With the 4th switching elements conductive.
In the present embodiment, with continued reference to Fig. 2, the exposure voltage of N+1 frame image is stored in first voltage storage unit
101 and tertiary voltage storage unit 103 be to be realized by control first switching element TX1 and the 5th switch element TX5 conducting
, correspondingly, it is to pass through that the exposure voltage of the exposure voltage of N+1 frame image and N frame image, which is exported to difference amplifier M0,
First switching element TX1 and the 5th switch element TX5 shutdown is controlled, while controlling the second switch element TX2 and institute
The 4th switch element TX4 conducting is stated to realize.
Working principle, more contents of working method about the control method, are referred to phase of the Fig. 1 into Fig. 2
Description is closed, which is not described herein again.
The embodiment of the invention also discloses a kind of imaging sensor, described image sensor may include shown in Fig. 1 or Fig. 2
Reading circuit.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (11)
1. a kind of reading circuit of imaging sensor, including pixel unit and analog-digital converter, which is characterized in that further include:
Master switch element, first end couple the pixel unit；
Voltage storage cell group, including first voltage storage unit in parallel, second voltage storage unit and tertiary voltage storage
Unit, the first voltage storage unit, second voltage storage unit and tertiary voltage storage unit input terminal coupling described in
The second end of master switch element；
Difference amplifier, first input end couple the output end of target voltage storage unit, and the second input terminal couples other
The output end of voltage storage cell, the target voltage storage unit are the first voltage storage unit, second voltage storage
One of unit and tertiary voltage storage unit, other described voltage storage cells are its other than target voltage storage unit
His two voltage storage cells；
Comparator, first input end couple the output end of the difference amplifier, the second input end grounding, output end coupling
Connect the input terminal of the analog-digital converter；
Rp unit, input terminal couple the output end of the difference amplifier, and output end couples the analog-digital converter
Input terminal, the rp unit to the output signal in the difference amplifier be negative voltage when, to the difference amplifier
Output signal carry out reverse phase；
Wherein, the output of the output signal of the comparator and the output signal of the analog-digital converter as the reading circuit
Signal.
2. the reading circuit of imaging sensor according to claim 1, which is characterized in that the rp unit includes:
Inverting amplifier, input terminal couple the output end of the difference amplifier, and output end couples the analog-digital converter
Input terminal；
Reverse phase control switch element, first end couple the output end of the difference amplifier, and second end couples the modulus
The input terminal of converter.
3. the reading circuit of imaging sensor according to claim 2, which is characterized in that the output of the difference amplifier
When signal is negative, the reverse phase control switch element OFF；The output signal of the difference amplifier is timing, the reverse phase control
Switching elements conductive processed.
4. the reading circuit of imaging sensor according to claim 1, which is characterized in that the output of the reading circuit is believed
It number include sign bit and data bit, the sign bit is the output signal of the comparator, and the data bit is the modulus turn
The output signal of parallel operation.
5. the reading circuit of imaging sensor according to claim 1, which is characterized in that the first voltage storage unit
Including first switching element, first capacitor and second switch element, the first end coupling of the first switching element is described always to be opened
The second end of element is closed, the first end of the first capacitor couples the second end of the first switching element, the first capacitor
Second end ground connection, the first end of the second switch element couples the first end of the first capacitor, the second switch member
The second end of part couples the first input end of the difference amplifier；
The second voltage storage unit includes third switch element, the second capacitor and the 4th switch element, the third switch
The first end of element couples the second end of the master switch element, and the first end of second capacitor couples the third switch member
The second end of part, the second end ground connection of second capacitor, the first end of the 4th switch element couple second capacitor
First end, the second end of the 4th switch element couples the second input terminal of the difference amplifier；
The tertiary voltage storage unit includes the 5th switch element, third capacitor and the 6th switch element, the 5th switch
The first end of element couples the second end of the master switch element, the first end coupling of the third capacitor the 5th switch member
The second end of part, the second end ground connection of the third capacitor, the first end of the 6th switch element couple the third capacitor
First end, the second end of the 6th switch element couples the second input terminal of the difference amplifier.
6. the control method of the reading circuit based on imaging sensor described in any one of claim 1 to 5, which is characterized in that
Include:
After the completion of nth frame image exposure, the master switch element conductive is controlled using timing control signal, N is positive integer；
During the master switch element conductive, the first voltage storage unit and institute are controlled using the timing control signal
The exposure voltage that second voltage storage unit stores the nth frame image is stated, the tertiary voltage storage unit stores N-1 frame figure
The exposure voltage of picture；
The master switch element OFF is controlled using the timing control signal；
The first voltage storage unit is controlled using the timing control signal and tertiary voltage storage unit output exposes
Photoelectricity is depressed into the difference amplifier.
7. control method according to claim 6, which is characterized in that further include:
After the completion of N+1 frame image exposure, the master switch element conductive is controlled using the timing control signal；
During the master switch element conductive, the first voltage storage unit and institute are controlled using the timing control signal
The exposure voltage that tertiary voltage storage unit stores the N+1 frame image is stated, the second voltage storage unit stores N frame figure
The exposure voltage of picture；
The master switch element OFF is controlled using the timing control signal；
The first voltage storage unit is controlled using the timing control signal and second voltage storage unit output exposes
Photoelectricity is depressed into the difference amplifier.
8. control method according to claim 7, which is characterized in that the first voltage storage unit includes first switch
Element, first capacitor and second switch element, the first end of the first switching element couple the second of the master switch element
End, the first end of the first capacitor couple the second end of the first switching element, and the second end of the first capacitor is grounded,
The first end of the second switch element couples the first end of the first capacitor, the second end coupling of the second switch element
The first input end of the difference amplifier；
The second voltage storage unit includes third switch element, the second capacitor and the 4th switch element, the third switch
The first end of element couples the second end of the master switch element, and the first end of second capacitor couples the third switch member
The second end of part, the second end ground connection of second capacitor, the first end of the 4th switch element couple second capacitor
First end, the second end of the 4th switch element couples the second input terminal of the difference amplifier；
The tertiary voltage storage unit includes the 5th switch element, third capacitor and the 6th switch element, the 5th switch
The first end of element couples the second end of the master switch element, the first end coupling of the third capacitor the 5th switch member
The second end of part, the second end ground connection of the third capacitor, the first end of the 6th switch element couple the third capacitor
First end, the second end of the 6th switch element couples the second input terminal of the difference amplifier.
9. control method according to claim 8, which is characterized in that described using described in timing control signal control
The exposure voltage that first voltage storage unit and the second voltage storage unit store the nth frame image includes:
The first switching element and the third switching elements conductive are controlled using the timing control signal；
It is described defeated using the timing control signal control first voltage storage unit and the tertiary voltage storage unit
Exposure voltage to the difference amplifier includes: out
The first switching element is controlled using the timing control signal and the third switch element turns off, while controlling institute
State second switch element and the 6th switching elements conductive.
10. control method according to claim 8, which is characterized in that the control first voltage storage unit and
The exposure voltage that the tertiary voltage storage unit stores the N+1 frame image includes:
The first switching element and the 5th switching elements conductive are controlled using the timing control signal；
It is described defeated using the timing control signal control first voltage storage unit and the second voltage storage unit
Exposure voltage to the difference amplifier includes: out
The first switching element is controlled using the timing control signal and the 5th switch element turns off, while controlling described the
Two switch elements and the 4th switching elements conductive.
11. a kind of imaging sensor, which is characterized in that the reading including imaging sensor described in any one of claim 1 to 5
Circuit.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113496743A (en) * | 2020-03-19 | 2021-10-12 | 群创光电股份有限公司 | Readout circuit |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005217471A (en) * | 2004-01-27 | 2005-08-11 | Victor Co Of Japan Ltd | Cmos image sensor difference signal detecting circuit |
| CN101800837A (en) * | 2009-02-05 | 2010-08-11 | 香港科技大学 | Device and method for improving dynamic range and linearity of CMOS image sensor |
| CN103685989A (en) * | 2012-09-18 | 2014-03-26 | 索尼公司 | Solid-state imaging device, control method and electronic device |
| CN103974001A (en) * | 2013-01-24 | 2014-08-06 | 三星电子株式会社 | Image Sensor, Operating Method Thereof, And System Including Same |
| JP5601001B2 (en) * | 2010-03-31 | 2014-10-08 | ソニー株式会社 | Solid-state imaging device, driving method, and electronic apparatus |
| CN105208300A (en) * | 2014-06-23 | 2015-12-30 | 上海箩箕技术有限公司 | Image sensor, and reading circuit and reading method of amorphous silicon TFT pixel unit |
| US20160165160A1 (en) * | 2014-12-05 | 2016-06-09 | Qualcomm Incorporated | Pixel readout architecture for full well capacity extension |
| CN108833812A (en) * | 2018-06-25 | 2018-11-16 | 广东工业大学 | An image sensor and image dynamic information processing method |
| CN109005329A (en) * | 2018-09-19 | 2018-12-14 | 广东工业大学 | A kind of pixel unit, imaging sensor and camera |
| CN109167923A (en) * | 2018-10-23 | 2019-01-08 | Oppo广东移动通信有限公司 | Image transmission method, image transmission device, electronic equipment and storage medium |
| CN109862363A (en) * | 2018-12-29 | 2019-06-07 | 广东美电贝尔科技集团股份有限公司 | The second-compressed method and its compressibility of video |
-
2019
- 2019-09-17 CN CN201910877684.6A patent/CN110475085A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005217471A (en) * | 2004-01-27 | 2005-08-11 | Victor Co Of Japan Ltd | Cmos image sensor difference signal detecting circuit |
| CN101800837A (en) * | 2009-02-05 | 2010-08-11 | 香港科技大学 | Device and method for improving dynamic range and linearity of CMOS image sensor |
| JP5601001B2 (en) * | 2010-03-31 | 2014-10-08 | ソニー株式会社 | Solid-state imaging device, driving method, and electronic apparatus |
| CN103685989A (en) * | 2012-09-18 | 2014-03-26 | 索尼公司 | Solid-state imaging device, control method and electronic device |
| CN103974001A (en) * | 2013-01-24 | 2014-08-06 | 三星电子株式会社 | Image Sensor, Operating Method Thereof, And System Including Same |
| CN105208300A (en) * | 2014-06-23 | 2015-12-30 | 上海箩箕技术有限公司 | Image sensor, and reading circuit and reading method of amorphous silicon TFT pixel unit |
| US20160165160A1 (en) * | 2014-12-05 | 2016-06-09 | Qualcomm Incorporated | Pixel readout architecture for full well capacity extension |
| CN108833812A (en) * | 2018-06-25 | 2018-11-16 | 广东工业大学 | An image sensor and image dynamic information processing method |
| CN109005329A (en) * | 2018-09-19 | 2018-12-14 | 广东工业大学 | A kind of pixel unit, imaging sensor and camera |
| CN109167923A (en) * | 2018-10-23 | 2019-01-08 | Oppo广东移动通信有限公司 | Image transmission method, image transmission device, electronic equipment and storage medium |
| CN109862363A (en) * | 2018-12-29 | 2019-06-07 | 广东美电贝尔科技集团股份有限公司 | The second-compressed method and its compressibility of video |
Non-Patent Citations (1)
| Title |
|---|
| 王龙菲: "《中国优秀硕士学位论文全文数据库 信息科技辑》", 15 August 2014 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113496743A (en) * | 2020-03-19 | 2021-10-12 | 群创光电股份有限公司 | Readout circuit |
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