CN110444671A - A kind of perovskite solar battery based on ultra thin p-type polysilicon film - Google Patents
A kind of perovskite solar battery based on ultra thin p-type polysilicon film Download PDFInfo
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- CN110444671A CN110444671A CN201910682960.3A CN201910682960A CN110444671A CN 110444671 A CN110444671 A CN 110444671A CN 201910682960 A CN201910682960 A CN 201910682960A CN 110444671 A CN110444671 A CN 110444671A
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- polysilicon film
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- H—ELECTRICITY
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- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
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- H—ELECTRICITY
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- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
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- H—ELECTRICITY
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Abstract
The invention discloses a kind of perovskite solar batteries based on ultra thin p-type polysilicon film, including transparent substrate, ultra thin p-type polysilicon film, light-absorption layer, electronics abstraction, layer and metal electrode, transparent substrate, ultra thin p-type polysilicon film, light-absorption layer, electronics abstraction, layer and metal electrode successively arrange from top to bottom.The present invention makes the cost of battery fall sharply as the single hole transmission layer in perovskite solar battery using ultra thin p-type polysilicon film without transparent conductive films such as high ITO, FTO, therefore cost of the invention is low；Ultra thin p-type polysilicon film of the invention has high crystalline and low-defect-density, enhances hole Extracting Ability, guarantees the unimpeded transmission of charge；The light-absorption layer of ultra thin p-type polysilicon film and perovskite material that the present invention selects so that contact interface is sufficiently stable, and then causes the durability of battery to greatly promote.
Description
Technical field
The present invention relates to solar batteries, more particularly to a kind of perovskite solar energy based on ultra thin p-type polysilicon film
Battery.
Background technique
Solar energy is the most abundant environmentally friendly regenerated resources on the earth, has attracted people greatly to pay close attention to meet not
The disconnected global Energy Consumption demand increased.Develop safe and clean and efficient solar energy switch technology or solar energy power generating
Technology is undoubtedly one of most pressing problem.Traditional photovoltaic device is mainly crystal silicon solar batteries, still occupies market at present
Leading position.In order to reduce manufacturing cost and optimization power conversion efficiency, the novel light such as film, amorphous silicon, quantum dot and dyestuff
Volt technology is developed successively.
However, so far, the further development of most of novel photovoltaic technologies and material still suffers from severe challenge.Closely
Nian Lai, metal halide perovskite material have become the light capture material for most holding promise for next-generation solar battery.Calcium titanium
Pit wood material can cryogenic fluid processing, without extra defect present in conventional semiconductors.In addition, they have unique photo electric
For example suitable light absorption range of matter, high extinction coefficient, long charge carriers carrier diffusion length, high defect tolerance degree, tunable band gap and
High charge carrier mobility etc., these excellent characteristics make the authentication efficiency of perovskite solar battery be more than 24%, this
Item new technology has been provided with the potentiality with the competition of traditional commerce heliotechnics.
Summary of the invention
The purpose of the present invention is overcoming the shortcomings of in existing product, a kind of calcium titanium based on ultra thin p-type polysilicon film is provided
Mine solar battery.
In order to achieve the above object, the present invention is achieved by the following technical solutions:
A kind of perovskite solar battery based on ultra thin p-type polysilicon film, including transparent substrate, ultra thin p-type polysilicon
Film, light-absorption layer, electronics abstraction, layer and metal electrode, transparent substrate, ultra thin p-type polysilicon film, light-absorption layer, electronics abstraction, layer and gold
Belong to electrode successively to arrange from top to bottom.
Preferably, the material of transparent substrate includes glass, plastics and mica sheet.
Preferably, the material of light-absorption layer is QDX3Type perovskite material, the Q are Cs+、CH3NH3 +、CH(NH2)2 +、CH3
(CH2)3NH3 +At least one of, the D is Pb2+、Sn2+At least one of, the X is at least one in Br-, I-, Cl-
Kind.
Preferably, the material of electronics abstraction, layer is fullerene and its derivative, TiO2、Zn2SnO4、ZnO、SnO2Or N-shaped
Perovskite conductor oxidate.
Preferably, the material of the metal electrode is at least one of gold, silver, copper, aluminium, nickel, titanium.
Preferably, ultra thin p-type polysilicon film with a thickness of 5~600nm.
Preferably, the preparation method of ultra thin p-type polysilicon film is chemical vapour deposition technique, solid phase crystallization amorphous silicon membrane
Method or metal-induced crystallization amorphous silicon membrane method.
Beneficial effects of the present invention are as follows: 1, the present invention is using ultra thin p-type polysilicon film as perovskite solar battery
In single hole transmission layer so that the cost of battery is fallen sharply without transparent conductive films such as high ITO, FTO, therefore this hair
Bright cost is low；2, ultra thin p-type polysilicon film of the invention has high crystalline and low-defect-density, increases hole Extracting Ability
By force, guarantee the unimpeded transmission of charge；3, the light-absorption layer for the ultra thin p-type polysilicon film and perovskite material that the present invention selects, so that
Contact interface is sufficiently stable, and then the durability of battery is caused to greatly promote.
Detailed description of the invention
Fig. 1 is a kind of perovskite solar battery structure schematic diagram based on ultra thin p-type polysilicon film；
Fig. 2 is a kind of perovskite solar battery based on ultra thin p-type polysilicon film and existing perovskite solar-electricity
The J-V curve synoptic diagram in pond.
Specific embodiment
Technical solution of the present invention is described further with reference to the accompanying drawings of the specification:
Embodiment:
As shown in Figure 1, a kind of perovskite solar battery based on ultra thin p-type polysilicon film, including it is transparent substrate 1, super
Thin p-type polysilicon film 2, light-absorption layer 3, electronics abstraction, layer 4 and metal electrode 5, the transparent substrate 1, ultra thin p-type polysilicon film 2,
Light-absorption layer 3, electronics abstraction, layer 4 and metal electrode 5 successively arrange from top to bottom.The material of transparent substrate 1 include glass, plastics and
Mica sheet.The material of light-absorption layer 3 is QDX3Type perovskite material, the Q are Cs+、CH3NH3 +、CH(NH2)2 +、CH3(CH2)3NH3 +
At least one of, the D is Pb2+、Sn2+At least one of, the X is Br-、I-、Cl-At least one of electronics extract
The material of layer 4 is fullerene and its derivative, TiO2、Zn2SnO4、ZnO、SnO2Or N-shaped perovskite conductor oxidate.Metal
The material of electrode 5 is at least one of gold, silver, copper, aluminium, nickel, titanium.Ultra thin p-type polysilicon film 2 with a thickness of 5~600nm.
The preparation method of ultra thin p-type polysilicon film 2 is chemical vapour deposition technique, solid phase crystallization amorphous silicon membrane method or metal-induced crystallization
Amorphous silicon membrane method.
Perovskite solar battery based on ultra thin p-type polysilicon film the preparation method is as follows:
It is a kind of based on the perovskite solar battery of ultra thin p-type polysilicon film by high soda-lime glass, ultra thin p-type polysilicon thoroughly
Film, CH (NH2)2PbI3, C60, ZnO and Cu composition, preparation step is as follows:
Step 1, substrate prepare: successively use deionized water, ethyl alcohol and acetone to be cleaned by ultrasonic 10min high saturating soda-lime glass,
It is spare；
The preparation of step 2, p-type polycrystalline silicon: first more in clean glass surface plasma reinforced chemical vapour deposition p-type
Polycrystal silicon film obtains the p-type film layer of deposition 20nm thickness then in 600 DEG C of processing 60min, cooling stand-by；
Step 3, CH (NH2)2PbI3The preparation of calcium titanium ore bed: the PbI for being 1.15:1 by molar ratio2Powder and CH (NH2)2I
Powder mixed dissolution is in 1:3 solution in DMF/DMSO volume ratio, and stirring and dissolving is complete at 50 DEG C.By perovskite forerunner
Liquid is spin-coated in p-type polycrystalline silicon, and 20min is then heated at 130 DEG C, cooling stand-by；
The preparation of step 4, C60, ZnO and Cu: in CH (NH2)2PbI3Successively electron beam evaporation deposits on calcium titanium ore bed surface
The Cu of 40nm C60,5nm ZnO and 100nm, control vacuum degree are 3.8 × 10-4。
Comparative example
Existing perovskite solar battery the preparation method is as follows:
A kind of trans- plane perovskite solar battery is by high ito glass, NiO, CH (NH thoroughly2)2PbI3, C60, ZnO and Cu
Composition, preparation step are as follows:
Step 1 substrate prepares: successively use deionized water, ethyl alcohol and acetone to be cleaned by ultrasonic 10min high saturating ito glass, it is standby
With；
The preparation of step 2NiO hole transmission layer: NiO hole transport first is deposited in clean ito glass surface magnetic control sputtering
Layer obtains the NiO hole transport film layer of deposition 20nm thickness then in 400 DEG C of processing 60min, cooling stand-by；
The step 3 and step 4 of step 3 and step 4 and embodiment are identical.
As shown in Fig. 2, label A is the J-V curve synoptic diagram of comparative example, label B is the J-V curve synoptic diagram of embodiment,
It is achieved as can be seen from Figure 2 according to the perovskite solar battery based on ultra thin p-type polysilicon film prepared by embodiment
19.4% high-photoelectric transformation efficiency, close to the efficiency of the perovskite solar battery 20.1% prepared according to comparative example, table
The bright perovskite solar battery using the preparation of this ultra thin p-type polysilicon film has extremely excellent power generation performance.
The present invention is had the advantage that using the perovskite solar battery of ultra thin p-type polysilicon film preparation；1, of the invention
Directly ultra thin p-type polysilicon deposition is served as into hole selective exposure layer on the transparent substrate, it is thin to save traditional electrically conducting transparent
Film and hole transport film, enormously simplify the structure of perovskite photovoltaic device, reduce process costs；2, the present invention is using existing
There is mature technology that can prepare the ultra thin p-type polysilicon film of high quality easily, is extremely satisfied with industrialization production requirement；3,
The ultra thin p-type polysilicon membrane that the present invention uses has both high light transmittance and high conductivity, can be effectively prevented from light capture loss,
It is able to achieve between perovskite and p-type interface charge transmission at high speed again, reduces the accumulation of charge；4, the present invention uses
Ultra thin p-type polysilicon membrane makes chemical stability, thermal stability and photostability all outstanding, dramatically increases perovskite solar energy
The long-term working stability of battery.
The present invention, as the single hole transmission layer in perovskite solar battery, is not necessarily to using ultra thin p-type polysilicon film
The transparent conductive films such as high ITO, FTO make the cost of battery fall sharply, therefore cost of the invention is low；Ultra-thin p of the invention
Type polysilicon film has high crystalline and low-defect-density, enhances hole Extracting Ability, guarantees the unimpeded transmission of charge；This hair
The ultra thin p-type polysilicon film of bright selection and the light-absorption layer of perovskite material, so that contact interface is sufficiently stable, and then lead to battery
Durability greatly promote.
It should be noted that listed above is only a kind of specific embodiment of the invention.It is clear that the invention is not restricted to
Upper embodiment, can also be there are many deforming, in short, those skilled in the art can directly lead from present disclosure
Out or all deformations for associating, it is considered as protection scope of the present invention.
Claims (7)
1. a kind of perovskite solar battery based on ultra thin p-type polysilicon film, which is characterized in that including transparent substrate (1), surpass
Thin p-type polysilicon film (2), light-absorption layer (3), electronics abstraction, layer (4) and metal electrode (5), the transparent substrate (1), ultra thin p-type
Polysilicon film (2), light-absorption layer (3), electronics abstraction, layer (4) and metal electrode (5) successively arrange from top to bottom.
2. a kind of perovskite solar battery based on ultra thin p-type polysilicon film according to claim 1, which is characterized in that
The material of the transparent substrate (1) includes glass, plastics and mica sheet.
3. a kind of perovskite solar battery based on ultra thin p-type polysilicon film according to claim 1, which is characterized in that
The material of the light-absorption layer (3) is QDX3Type perovskite material, the Q are Cs+、CH3NH3 +、CH(NH2)2 +、CH3(CH2)3NH3 +
At least one of, the D is Pb2+、Sn2+At least one of, the X is Br-、I-、Cl-At least one of.
4. a kind of perovskite solar battery based on ultra thin p-type polysilicon film according to claim 1, which is characterized in that
The material of the electronics abstraction, layer (4) is fullerene and its derivative, TiO2、Zn2SnO4、ZnO、SnO2Or N-shaped perovskite is partly led
Oxide body.
5. a kind of perovskite solar battery based on ultra thin p-type polysilicon film according to claim 1, which is characterized in that
The material of the metal electrode (5) is at least one of gold, silver, copper, aluminium, nickel, titanium.
6. a kind of perovskite solar battery based on ultra thin p-type polysilicon film according to claim 1, feature exist
In, the ultra thin p-type polysilicon film (2) with a thickness of 5~600nm.
7. a kind of perovskite solar battery based on ultra thin p-type polysilicon film according to claim 1, feature exist
In the preparation method of the ultra thin p-type polysilicon film (2) is chemical vapour deposition technique, solid phase crystallization amorphous silicon membrane method or gold
Belong to inducing crystallization of amorphous silicon thin film method.
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