CN110265327A - A kind of wafer after-treatment system and method based on marangoni effect - Google Patents

Abstract

The invention relates to the technical field of chemical mechanical polishing post-processing, and discloses a wafer post-processing system and method based on the Marangoni effect. circle; a gas injection device, used for spraying dry gas at a first temperature to the meniscus region of the cleaning solution attached to the wafer surface during the process of lifting the wafer from the cleaning solution, so that the attachments on the wafer surface follow the The direction opposite to the lift direction is peeled from the wafer surface.

Description

A wafer post-processing system and method based on the Marangoni effect

technical field

The invention relates to the technical field of chemical mechanical polishing post-processing, in particular to a wafer post-processing system and method based on the Marangoni effect.

Background technique

Chemical Mechanical Planarization (CMP) is an ultra-precision surface processing technology for global planarization in integrated circuit (IC) manufacturing. With the development of integrated circuit manufacturing technology, the control of wafer surface defects is becoming more and more stringent. During the wafer manufacturing process, the surface of the wafer will absorb pollutants such as particles or organic matter to generate a large number of defects, which require post-processing to remove these defects.

In particular, chemical reagents and abrasives used in large quantities in chemical mechanical polishing will cause contamination on the wafer surface, so after polishing, a post-treatment process is required to remove the contaminants on the wafer surface. The post-treatment process generally consists of cleaning and drying. , to provide a smooth and clean wafer surface.

The purpose of cleaning after polishing is to remove particles and various chemical substances on the surface of the wafer, and to avoid corrosion and damage to the surface and internal structure during the cleaning process. The current common wet cleaning is to clean the wafer in a solution environment, such as cleaning Chemical immersion, mechanical scrubbing, wet chemical cleaning, etc.

After the wafer is cleaned, a lot of water or cleaning solution residues will remain on the surface of the wafer. Since there are impurities dissolved in the residues of these waters or cleaning solutions, if these residual liquids are allowed to evaporate and dry by themselves, these impurities will rebond to the surface of the wafer, causing contamination and even destroying the structure of the wafer. For this reason, the wafer surface needs to be dried to remove these residual liquids. The traditional spin drying method, due to the large thickness of the remaining water film after drying, may even be higher than 200nm, can easily cause water mark defects.

To sum up, in the prior art, there is a problem that the drying effect of the wafer is poor, and the liquid is easy to remain.

Contents of the invention

Embodiments of the present invention provide a wafer post-processing system and method based on the Marangoni effect, aiming to solve at least one of the technical problems existing in the prior art.

The first aspect of the embodiments of the present invention provides a wafer post-processing system based on the Marangoni effect, including:

Wafer lifting device, used to lift the wafer immersed in the cleaning solution from the cleaning solution;

The gas injection device is used for spraying the dry gas of the first temperature to the meniscus area of the cleaning liquid attached to the wafer surface during the process of lifting the wafer from the cleaning liquid, so that the attachment on the wafer surface follows the lifting process. The opposite direction peels away from the wafer surface.

In one embodiment, the gas injection device comprises:

The first spraying mechanism is used to spray the drying gas of the first temperature to the meniscus region of the cleaning liquid attached to the first surface of the wafer;

The second spraying mechanism is used to spray the drying gas of the first temperature to the meniscus region of the cleaning liquid attached to the second surface of the wafer;

Wherein, the first surface and the second surface are two opposite surfaces of the wafer respectively.

In one embodiment, both the first injection mechanism and the second injection mechanism include a gas injection assembly, a rotation drive module and a control module connected in sequence;

The control module controls the rotation of the gas injection assembly through the rotation driving module so as to aim the dry gas sprayed by it at the meniscus region.

In one embodiment, the gas injection assembly includes a spray bar, and a plurality of air injection holes are arranged at intervals on the spray bar, and a layer of air curtain is formed when the plurality of air injection holes spray the dry gas of the first temperature at the same time, so as to pass through the air. A curtain sprays the meniscus region.

In one embodiment, the gas injection assembly includes a spray bar having an elongated slot in the spray bar.

In one embodiment, the rotary drive module includes a rotary motor and a motor driver.

In one embodiment, the first temperature is higher than the temperature of the cleaning solution and lower than 60°C.

In one embodiment, the wafer post-processing system further includes a gas supply source for providing the drying gas at the first temperature, and the gas supply source is connected to the gas injection device through a pipeline.

In one embodiment, the pipeline is provided with a control valve for controlling the on-off of the pipeline and a flow meter for controlling the flow of the dry gas.

The second aspect of the embodiments of the present invention provides a method for post-processing wafers based on the Marangoni effect, including:

pulling the wafer immersed in the cleaning solution from the cleaning solution;

During the process of lifting the wafer from the cleaning solution, spray dry gas at a first temperature to the meniscus region of the cleaning solution attached to the surface of the wafer, so that the attached surface of the wafer The deposits are peeled off from the wafer surface in a direction opposite to the lifting direction.

The wafer post-processing system and method described in the present application have beneficial effects including: based on the Marangoni effect, the cleaning liquid is peeled off with the attachment on the surface of the wafer, thereby realizing the cleaning and drying of the wafer, reducing the Liquid residue improves wafer drying.

Description of drawings

The advantages of the present invention will become clearer and easier to understand through the detailed description in conjunction with the following drawings, but these drawings are only schematic and do not limit the protection scope of the present invention, wherein:

FIG. 1 is a schematic diagram of the principle of wafer post-processing provided by an embodiment of the present invention;

FIG. 2 is a schematic structural diagram of a wafer post-processing system provided by an embodiment of the present invention;

Fig. 3 is a schematic structural diagram of a gas injection device provided by an embodiment of the present invention;

4a and 4b are schematic structural views of the injection mechanism provided by an embodiment of the present invention;

5a and 5b are schematic structural views of the injection mechanism provided by another embodiment of the present invention;

6 is a front view of a wafer post-processing system provided by an embodiment of the present invention;

7 is a right view of a wafer post-processing system provided by an embodiment of the present invention;

Fig. 8a is a schematic diagram of a first moving mechanism provided by an embodiment of the present invention;

Fig. 8b is a schematic diagram of a first moving mechanism provided by another embodiment of the present invention;

9 is a right view of a wafer post-processing system provided by another embodiment of the present invention;

Explanation of reference signs:

w, wafer;

10. Wafer lifting device; 11. First moving mechanism; 111. Groove; 112. First connector; 113. First slider; 114. First guide rail; 115. First servo electric cylinder; 12. The first Two moving mechanisms; 121, the first clamping part; 122, the second clamping part; 123, the second driving part; 124, the vertical moving mechanism; 125, the horizontal moving mechanism;

20. Gas injection device; 21. First injection mechanism; 22. Second injection mechanism; 23. Gas injection assembly; 231. Spray rod; 232. Air injection hole; 233. Slender slit; 24. Rotary drive module; 25 , control module;

30. Cleaning tank.

Detailed ways

The technical solutions of the present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings. The examples described here are specific implementations of the present invention and are used to illustrate the concept of the present invention; these descriptions are all explanatory and exemplary, and should not be construed as limiting the implementation of the present invention and the protection scope of the present invention . In addition to the embodiments described here, those skilled in the art can also adopt other obvious technical solutions based on the claims of the application and the contents disclosed in the specification, and these technical solutions include adopting any modifications made to the embodiments described here. Obvious alternatives and modified technical solutions. It should be understood that, unless otherwise specified, for ease of understanding, the following descriptions of the specific embodiments of the present invention are all based on the natural state that the relevant equipment, devices, components, etc. are originally stationary and not given external control signals and driving forces describe.

As shown in Figure 1, the implementation principle of wafer post-processing based on the Marangoni effect is:

In Figure 1, the liquid rises along the surface of the wafer w due to the wetting effect of the liquid. The contact liquid surface presents a curved liquid surface in the shape of a concave moon, that is, the meniscus.

As shown in Figure 1, while the wafer w is pulled out of the cleaning solution at a constant speed V, hot dry gas is sprayed onto the meniscus region of the cleaning solution attached to the surface of the wafer w, causing the liquid temperature in this region As the temperature rises, a temperature gradient is formed, and the temperature gradient induces a surface tension gradient to make the cleaning liquid flow downward along the meniscus. The strong interfacial flow generated by the Marangoni effect can not only absorb on the wafer w as the wafer w is pulled The liquid stripping on the surface of w can also wash away the pollutants attached to the surface of the wafer w, thereby realizing the cleaning and drying of the wafer w at the same time.

As shown in FIG. 1, a wafer post-processing system based on the Marangoni effect provided by an embodiment of the present invention includes:

Wafer lifting device 10, used to pull the wafer w immersed in the cleaning solution from the cleaning solution;

The gas injection device 20 is used to spray dry gas at a first temperature to the meniscus region of the cleaning solution attached to the surface of the wafer w during the process of lifting the wafer w from the cleaning solution, so that the attached surface of the wafer w The attached objects are peeled off from the surface of the wafer w in a direction opposite to the lifting direction.

In one embodiment, the gas injection device 20 is rotatable about a rotation axis, so that the injected gas moves with the meniscus. The range of rotation angle of the gas injection position of the gas injection device 20 around the rotation axis is between 10° and 50° with respect to the horizontal plane.

In this embodiment, the gas injected by the gas injection device 20 may be nitrogen, and the temperature of the gas, ie, the first temperature, is higher than the temperature of the cleaning liquid and lower than 60°C.

The temperature of the nitrogen gas is higher than the temperature of the cleaning liquid so that the temperature distribution in the meniscus region changes, since Marangoni convection occurs when the surface tension of the interface depends on the temperature distribution, that is, in this example using hot dry gas injection At the interface between liquid and solid, based on the thermal Marangoni effect, the cleaning liquid will peel off the attachments on the surface of the wafer, so as to realize the cleaning and drying of the wafer w, reduce the liquid residue, and improve the drying effect of the wafer .

The temperature of the nitrogen gas is lower than 60°C, which can avoid drying defects caused by the evaporation of a large amount of liquid caused by the overheating of the wafer w.

The wafer post-processing system of the embodiment of the present invention replaces flammable, explosive and toxic organic vapors for Marangoni drying by using green and environmentally friendly nitrogen gas, which does not need to be equipped with safety protection devices, simplifies the gas supply system, and improves wafer post-processing. Handle system security. In addition, the wafer post-processing system based on the Marangoni effect in the embodiment of the present invention has a significant drying effect on substrates with low thermal conductivity such as sapphire substrates and gallium nitride substrates.

As shown in Figure 2, the gas injection device 20 includes:

The first spraying mechanism 21 is used to spray dry gas at a first temperature to the meniscus region of the cleaning liquid attached to the first surface of the wafer w;

The second spraying mechanism 22 is used to spray the drying gas of the first temperature to the meniscus region of the cleaning liquid attached to the second surface of the wafer w;

Wherein, the first surface and the second surface are two opposite surfaces of the wafer w.

The first ejection mechanism 21 and the second ejection mechanism 22 are located on two symmetrical sides of the wafer.

In this embodiment, the first spraying mechanism 21 and the second spraying mechanism 22 work at the same time, so that when the wafer w is lifted from the cleaning solution, the meniscus of the cleaning solution attached to the two opposite surfaces of the wafer w is simultaneously Drying gas at the first temperature is injected into the surface area, so that the attachments on the two surfaces of the wafer w are peeled off from the surface of the wafer w in a direction opposite to the lifting direction. In this embodiment, the first spraying mechanism 21 and the second spraying mechanism 22 realize simultaneous drying of two opposite surfaces of the wafer w during the pulling process of the wafer w.

As shown in FIG. 3, taking one side of the wafer w as an example, the first injection mechanism 21 and the second injection mechanism 22 both include a gas injection assembly 23, a rotation drive module 24 and a control module 25 connected in sequence;

The control module 25 controls the rotation of the gas injection assembly 23 through the rotation driving module 24 so as to aim the dry gas sprayed by it at the meniscus region.

As a possible implementation manner, the control module 25 controls the gas injection assembly 23 to rotate at a preset angular velocity, so that the dry gas injected by the gas injection assembly 23 is aimed at the meniscus region.

As another possible implementation, the control module 25 is also connected to the wafer lifting device 10, and the control module 25 acquires the lifting speed of the wafer lifting device 10 to pull the wafer, and calculates the corresponding rotation angular velocity of the gas injection assembly 23, to The gas injection assembly 23 cooperates with the wafer lifting device 10 to rotate the injection angle of the drying gas as the wafer rises.

The rotation driving module 24 can drive the gas injection assembly 23 to rotate, so that the angle of the gas injected by the gas injection assembly 23 changes simultaneously with the change of the interface between the solid and the liquid caused by the pulling of the wafer w.

In one embodiment, the rotary drive module 24 includes a rotary motor and a motor driver. The rotary motor is fixedly connected with the gas injection assembly 23 to drive the gas injection assembly 23 to rotate, the motor driver is connected with the rotary motor and the control module 25 respectively, and the control module 25 drives the operation of the rotary motor through the motor driver.

In one embodiment of the present invention, the post-wafer processing system further includes a gas supply source for providing the drying gas at the first temperature, and the gas supply source is connected to the gas injection device 20 through a pipeline.

In one embodiment, the pipeline is provided with a control valve for controlling the on-off of the pipeline and a flow meter for controlling the flow of the dry gas.

As shown in Figure 4a, it is a schematic diagram of a gas injection assembly 23 provided by an embodiment of the present invention, the gas injection assembly 23 includes a hollow spray rod 231, and the spray rod 231 is connected with a gas supply source that provides dry gas through a pipeline, and the dry gas Flows into the hollow portion of the spray bar 231 through the air inlet of the spray bar 231 . The spray rod 231 is provided with a plurality of spray holes 232 communicated with the hollow part at intervals, and the drying gas is sprayed outward through the spray holes 232 . A plurality of gas injection holes 232 simultaneously inject the drying gas at the first temperature to form an air curtain, so as to spray the meniscus area through the air curtain to dry the wafer w.

Specifically, the diameter of the spray rod 231 is 12 mm, the vertical distance between the bottom end of the spray rod 231 and the liquid surface is 5 to 15 mm, and the horizontal distance between the end point closest to the wafer and the wafer is 5 to 10 mm. The included angle between the jet hole 232 and the horizontal plane ranges from 10° to 50°. The gas flow rate into the spray bar 231 is 15 to 50 L/min.

As shown in Figure 4b, it is a schematic diagram of the local structure of the spray bar 231 with a plurality of air injection holes 232 in Figure 4a. An air injection hole 232, wherein the air injection hole 232 can adopt a circular hole with a diameter d1 of 0.1 to 0.5 mm, preferably 0.1 mm. The distance between two adjacent air injection holes 232 is 2 to 5 mm, preferably 3 mm.

As shown in Figure 5a, it is a schematic diagram of a gas injection assembly 23 provided by another embodiment of the present invention. The gas injection assembly 23 includes a hollow spray rod 231, and the spray rod 231 is connected with a gas supply source that provides dry gas through a pipeline. The gas flows into the hollow portion of the spray bar 231 through the air inlet of the spray bar 231 . The spray rod 231 is provided with an elongated slit 233 communicating with the hollow part, and the drying gas is sprayed outward through the elongated slit 233 . A layer of air curtain is formed when the elongated slit 233 sprays the drying gas at the first temperature, so as to spray the meniscus area through the air curtain to dry the wafer w.

As shown in Figure 5b, it is a schematic diagram of the local structure of the spray bar 231 with the elongated slit 233 in Figure 5a, the local structure I in Figure 5a is enlarged as shown in Figure 5b, and the elongated slit 233 extends along the horizontal direction , the length of which matches the diameter of the wafer w, and the width d2 can be 0.1 to 0.5 mm, preferably 0.1 mm.

In one embodiment, the length of the spray bar 231 is greater than the diameter of the wafer.

As shown in Figures 6 and 7, a wafer post-processing system provided by an embodiment of the present invention further includes:

The cleaning tank 30 is used to accommodate the cleaning solution for cleaning the wafer w;

Wafer lifting device 10, used to lift the wafer w immersed in the cleaning solution from the cleaning solution;

Wafer lifting device 10 comprises:

The first moving mechanism 11 is used to fix the lower position of the wafer w in the cleaning solution for lifting;

The second moving mechanism 12 is used to, when the first moving mechanism 11 lifts the wafer w to a preset position, the upper side position of the fixed wafer w that has been cleaned and dried above the cleaning liquid level continues to lift until the wafer w out of the cleaning solution.

In this embodiment, after the second moving mechanism 12 is fixed to the wafer w, the first moving mechanism 11 releases the wafer w.

The surface of the second moving mechanism 12 is kept clean and dry, and the position where the second moving mechanism 12 is in contact with the wafer w is also a position where cleaning and drying have been completed, avoiding secondary pollution of the contact position, and solving the problem of the contact area between the fixture and the wafer. The problem of not being able to wash and dry completely.

Surfaces of the first moving mechanism 11 and the second moving mechanism 12 in contact with the wafer are provided with a hydrophobic coating.

The fixing part of the first moving mechanism 11 for fixing the wafer w is placed in the cleaning tank 30 and located below the wafer w. When the wafer w is completely submerged in the cleaning solution and cleaned, the first moving mechanism 11 placed in the cleaning tank 30 moves upward from the bottom of the wafer w, so that the first moving mechanism 11 fixes the lower side of the wafer w. And lift wafer w from below wafer w. The lower position is located in the cleaning solution. As shown in FIG. 1, as a possible implementation mode, the lower position where the upper end of the first moving mechanism 11 contacts the wafer is located below the center of the wafer, and is at a distance from the center of the wafer. The vertical distance is greater than one-third of the wafer radius.

The first moving mechanism 11 drives the wafer w to move upward. When the first moving mechanism 11 lifts the wafer w to a preset position, the first moving mechanism 11 stops moving. At this time, part of the wafer w is exposed to the liquid surface of the cleaning solution. The second moving mechanism 12 moves downward from above the wafer w to fix the upper position of the wafer w above the liquid level of the cleaning liquid. After the second moving mechanism 12 stably fixes the wafer w, the second moving mechanism 12 drives the wafer w continues to move upwards to continue to lift the wafer w until the wafer w is out of the cleaning solution. As shown in FIG. 1 , as a possible implementation manner, the preset position is a position where the center of the wafer is separated from the surface of the cleaning liquid. The preset position is higher than the lower side position of the wafer w fixed by the first moving mechanism 11 and lower than the upper side position of the wafer w fixed by the second moving mechanism 12 . Specifically, the first moving mechanism 11 lifts the wafer to a preset position such that the distance between the apex of the wafer and the liquid surface is 1.2 times to 1.5 times the radius of the wafer. The upper position where the second moving mechanism 12 contacts the wafer may be the endpoint of the wafer's horizontal diameter, or an edge point that is lower than the endpoint by a certain distance, for example, 10 mm lower.

In the embodiment of the present invention, two moving mechanisms are used to lift the wafer w respectively. The first moving mechanism 11 contacts the wafer w below the cleaning liquid level and lifts the wafer w. After the wafer w is exposed to the liquid surface, the second moving mechanism 12 Fix the position of the wafer w that has been cleaned and dried and continue to lift the wafer w until the wafer w is completely out of the liquid surface. There is no part that cannot be cleaned or dried during the whole process, which can ensure that the entire surface of the wafer w is cleaned and dried , improving the post-processing effect of the wafer w.

In one embodiment of the present invention, the wafer post-processing system further includes a controller for controlling the synchronous operation of the wafer lifting device 10 , the gas injection device 20 and the gas supply source.

The controller is connected to the wafer lifting device 10, and the controller controls the first moving mechanism 11 and the second moving mechanism 12 to perform the above actions. After the second moving mechanism 12 is fixed to the wafer w, the controller controls the first moving mechanism 11 to release the wafer w.

1 to 6, the working process of the wafer post-processing system provided by the present invention includes:

In the first step, the first moving mechanism 11 drives the wafer w to move upwards (that is, to move in a direction other than the cleaning liquid). Hot drying gas is sprayed from the meniscus area of the attached cleaning liquid to dry the part of the wafer exposed to the liquid surface.

In the second step, when the first moving mechanism 11 lifts the wafer w to a preset position, for example, after more than half of the wafer w is exposed to the liquid surface, the first moving mechanism 11 stops moving. At this time, the second moving mechanism 12 Fix the dried upper side of the wafer and then continue to lift the wafer w until the wafer is completely separated from the cleaning solution, thereby realizing the overall cleaning and drying of the surface of the wafer w.

As shown in Figures 6 and 7, the first moving mechanism 11 includes a groove 111 for accommodating the lower side of the wafer w and a first driving member connected to the groove 111, the first driving member is used to drive the groove 111 to move up and down . When the wafer w is placed in the cleaning solution, the first moving mechanism 11 moves to place the lower side of the wafer w in the groove 111 .

In one embodiment, the first moving mechanism 11 is provided with a presence detection module for detecting whether the wafer w is present.

The presence detection module can be a pressure sensor, and the pressure sensor is arranged on the surface of the groove 111 in contact with the wafer w. When the groove 111 supports the wafer w, the pressure sensor detects a pressure change to judge that the wafer w is in position.

As shown in FIG. 8 a , as a possible implementation manner, the groove 111 is provided with a hollow hole 116 penetrating through the upper surface and the bottom surface, so as to avoid depositing impurities on the surface of the groove 111 in contact with the wafer w.

As shown in Figure 8b, as another possible implementation, the first moving mechanism 11 includes a first support 117 and a second support 118, and the first support 117 and the second support 118 can be two pillars for supporting the lower part of the wafer.

As shown in Figure 6, the second moving mechanism 12 includes a first clamping part 121, a second clamping part 122 and a second driving part 123, wherein the second driving part 123 is connected to the first clamping part 121 and the second driving part 123 respectively. The clamping part 122 is connected to synchronously drive the first clamping part 121 and the second clamping part 122 to move toward or back, and the first clamping part 121 and the second clamping part 122 are arranged oppositely for clamping the wafer w . Optionally, the second driving member 123 may be realized by a motor or a cylinder.

It can be understood that when the second driving member 123 synchronously drives the first clamping component 121 and the second clamping component 122 to move toward each other, the first clamping component 121 and the second clamping component 122 are close to each other, and the first clamping component The bottom of the member 121 and the bottom of the second clamping member 122 can clamp the wafer w. When the second driving member 123 synchronously drives the first clamping part 121 and the second clamping part 122 to move backwards, the first clamping part 121 and the second clamping part 122 are far away from each other, and the bottom of the first clamping part 121 and the bottom of the second clamping member 122 can release the wafer w.

In one embodiment, the second moving mechanism 12 is provided with a clamp detection module for detecting whether the wafer w is clamped.

The clamping detection module may include a first sensor, the first sensor is installed on the second driver 123, and the first sensor is used to detect the first clamping of the wafer w by the first clamping component 121 and the second clamping component 122. Clamping position. The first sensor judges whether the first clamping component 121 and the second clamping component 122 clamp the wafer w by detecting the moving distance of the second driving component 123, or the first sensor detects the contact between the second driving component 123 and the first clamping component respectively. The distance between the two parts connected by the clamping member 121 and the second clamping member 122 is used to determine whether the wafer w is clamped, or the first sensor can also determine whether it is clamped by detecting the load size of the second driving member 123 Wafer w.

Through the first sensor, it can be accurately judged whether the second moving mechanism 12 has clamped the wafer w or released the wafer w, so as to confirm whether the next operation is possible.

As shown in FIG. 9 , in one embodiment, the first driving part of the first moving mechanism 11 includes a first connecting part 112 , a first sliding block 113 , a first guide rail 114 and a first servo electric cylinder 115 . One end of the first connecting member 112 is connected to the groove 111 , and the other end is connected to the first sliding block 113 . The first slider 113 is movably disposed on the first guide rail 114 , and the first guide rail 114 is extended along the vertical direction to make the first slider 113 move up and down. The first servo electric cylinder 115 is used to control the moving direction and moving distance of the first slider 113 on the first guide rail 114 . The working principle of the first moving mechanism 11 is: the first servo electric cylinder 115 controls the first slider 113 to move on the first guide rail 114 so that the first slider 113 drives the groove 111 to move up and down through the first connecting piece 112 .

As shown in Figure 9, in one embodiment, the second driving member 123 of the second moving mechanism 12 is connected with the vertical moving mechanism 124 and the horizontal moving mechanism 125, so that the first moving mechanism 11 can move vertically and horizontally. can move freely. Wherein, the realization principle of the vertical movement mechanism 124 and the horizontal movement mechanism 125 is similar to that of the first driving member, and will not be repeated here.

The invention also discloses a wafer post-processing method based on the Marangoni effect, and the wafer post-processing method includes the following steps:

Step S1, pulling the wafer immersed in the cleaning solution from the cleaning solution;

Step S2, during the process of lifting the wafer from the cleaning solution, spraying dry gas at a first temperature to the meniscus region of the cleaning solution attached to the surface of the wafer, so that the wafer The attachments on the surface are peeled off from the surface of the wafer in a direction opposite to the lifting direction.

The accompanying drawings in this specification are schematic diagrams, which assist in explaining the concept of the present invention, and schematically represent the shapes of various parts and their interrelationships. It should be understood that, in order to clearly show the structures of the components in the embodiments of the present invention, the drawings are not drawn in the same scale, and the same reference signs are used to represent the same parts in the drawings.

In the description of this specification, references to the terms "one embodiment," "some embodiments," "exemplary embodiments," "example," "specific examples," or "some examples" are intended to mean that the implementation A specific feature, structure, material, or characteristic described by an embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

Although the embodiments of the present invention have been shown and described, those skilled in the art can understand that various changes, modifications, substitutions and modifications can be made to these embodiments without departing from the principle and spirit of the present invention. The scope of the invention is defined by the claims and their equivalents.

Claims (10)

1. A wafer post-processing system based on the Marangoni effect, comprising: Wafer lifting device, used to pull the wafer immersed in the cleaning solution from the cleaning solution; a gas spraying device, used for spraying dry gas at a first temperature to the meniscus region of the cleaning solution attached to the surface of the wafer during the lifting process of the wafer from the cleaning solution, so that the The attachments on the surface of the wafer are peeled off from the surface of the wafer in a direction opposite to the lifting direction. 2. The wafer post-processing system according to claim 1, wherein the gas injection device comprises: a first spraying mechanism, configured to spray the drying gas of the first temperature to the meniscus region of the cleaning liquid attached to the first surface of the wafer; The second injection mechanism is used to inject the drying gas of the first temperature to the meniscus area of the cleaning liquid attached to the second surface of the wafer; Wherein, the first surface and the second surface are respectively two opposite surfaces of the wafer. 3. The wafer post-processing system according to claim 2, wherein the first injection mechanism and the second injection mechanism each comprise a gas injection assembly, a rotary drive module and a control module connected in sequence; The control module controls the rotation of the gas injection assembly through the rotation driving module so as to align the dry gas sprayed by it at the meniscus region. 4. The wafer post-processing system as claimed in claim 3, wherein the gas injection assembly comprises a spray bar, and a plurality of gas injection holes are arranged at intervals on the spray bar, and the plurality of gas injection holes inject the gas simultaneously. When drying the gas at the first temperature, an air curtain is formed to spray the meniscus region through the air curtain. 5. The wafer post-processing system according to claim 3, wherein the gas injection assembly comprises a spray bar, and the spray bar is provided with a long slit. 6. The wafer post-processing system according to claim 3, wherein the rotation driving module comprises a rotation motor and a motor driver. 7. The wafer post-processing system according to any one of claims 1 to 6, wherein the first temperature is higher than the temperature of the cleaning solution and lower than 60°C. 8. The wafer post-processing system according to claim 1, further comprising a gas supply source for providing dry gas at the first temperature, between the gas supply source and the gas injection device Connected by tubing. 9. The wafer post-processing system according to claim 8, wherein a control valve for controlling on-off of the pipeline and a flow meter for controlling the flow rate of the drying gas are arranged on the pipeline. 10. A wafer post-processing method based on the Marangoni effect, comprising: pulling the wafer immersed in the cleaning solution from the cleaning solution; During the process of lifting the wafer from the cleaning solution, spray dry gas at a first temperature to the meniscus region of the cleaning solution attached to the surface of the wafer, so that the attached surface of the wafer The deposits are peeled off from the wafer surface in a direction opposite to the lifting direction.