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CN110048681A - A kind of current-injection type E power-like amplifier - Google Patents

A kind of current-injection type E power-like amplifier Download PDF

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Publication number
CN110048681A
CN110048681A CN201910348370.7A CN201910348370A CN110048681A CN 110048681 A CN110048681 A CN 110048681A CN 201910348370 A CN201910348370 A CN 201910348370A CN 110048681 A CN110048681 A CN 110048681A
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current
nmos
circuit
injection
nmos transistor
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CN110048681B (en
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徐建
杜健昌
王志功
石永柳
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NANJING SINO CHIP MIRCOELECTRONICS CO Ltd
Southeast University
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NANJING SINO CHIP MIRCOELECTRONICS CO Ltd
Southeast University
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217Class D power amplifiers; Switching amplifiers
    • H03F3/2176Class E amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/451Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

本发明公开了一种电流注入式E类功率放大器,包括:电流源、射频扼流圈、由共源共栅的两个NMOS管组成的开关电路,及辅助电流注入电路、无源匹配电路、负载电阻;所述开关电路根据输入开关信号电平高低来控制其中一个NMOS管的导通和关断,同时辅助注入电流电路在该MOS管关断时根据注入控制信号的高电平控制将直流输入电流同功率放大器产生的输出电流一并向负载电阻注入,同时根据泻放控制信号的低电平关闭泻放通路,及在该NMOS管导通时根据注入控制信号的低电平控制停止向注入电流,同时根据泻放控制信号的高电平打开泻放通路。本发明的功率提升采用外部注入方式,不打破传统E类结构和工作方式,同时突破理论输出功率极限值。

The invention discloses a current injection type E power amplifier, comprising: a current source, a radio frequency choke coil, a switch circuit composed of two cascode NMOS transistors, an auxiliary current injection circuit, a passive matching circuit, load resistance; the switch circuit controls the turn-on and turn-off of one of the NMOS transistors according to the level of the input switch signal, while the auxiliary injection current circuit controls the direct current according to the high level of the injection control signal when the MOS tube is turned off The input current is injected into the load resistor together with the output current generated by the power amplifier, and the discharge path is closed according to the low level of the discharge control signal. The current is injected, and the discharge path is opened according to the high level of the discharge control signal. The power boost of the present invention adopts an external injection method, which does not break the traditional E-type structure and working method, and at the same time breaks through the theoretical output power limit value.

Description

一种电流注入式E类功率放大器A Current Injection Type E Power Amplifier

技术领域technical field

本发明涉及一种电流注入式E类功率放大器,属于射频功率放大器的技术领域。The invention relates to a current injection type E class power amplifier, which belongs to the technical field of radio frequency power amplifiers.

背景技术Background technique

自从Sokal等人于1975年提出E类功率放大器以来,人们关于它已做了大量研究。如附图1所示,理想的E类功放电路由一个作为开关的有源器件,一个射频扼流圈,与开关并联的充放电电容,一个谐振网络和一个负载组成。对于任意一个负载电阻R,在理想100%的漏极效率前提下,其输出功率由电源电压唯一决定,如公式(1)所示:Since Sokal et al. proposed the Class E power amplifier in 1975, a lot of research has been done on it. As shown in Figure 1, an ideal class E power amplifier consists of an active device as a switch, an RF choke coil, a charge and discharge capacitor connected in parallel with the switch, a resonant network and a load. For any load resistance R, under the premise of ideal 100% drain efficiency, its output power is uniquely determined by the supply voltage, as shown in formula (1):

然而在实际情况中,由于晶体管开关非理想性和寄生效应,以及在片无源器件的低Q值,使得输出效率难以达到理想100%,进而使得电路优化后输出功率会低于理论计算值,因此公式1所得到的输出功率是E类网络所能输出的极限功率值。However, in practice, due to the non-ideality and parasitic effects of transistor switching, as well as the low Q value of on-chip passive devices, it is difficult for the output efficiency to reach the ideal 100%, and the output power after circuit optimization will be lower than the theoretical calculation value. Therefore, the output power obtained by formula 1 is the limit power value that the class E network can output.

从E类设计公式可以看出,为了增强E类功率放大器的输出功率,可以通过升高电源电压的方式提升输出功率,但在深亚微米极CMOS工艺中,升高电源电压会使充当有源开关的晶体管很容易被击穿,尤其E类的漏极输出电压会达到最高3.562Vcc,;虽然可以通过增加晶体管宽长比的方式来减小导通电阻损耗,进而逼近最大输出功率,但在射频频率下,晶体管尺寸增加会带来严重的寄生电容问题,其中栅极寄生电容会降低功率放大器开关的转换速度,而增加的漏极寄生电容会还会超过理想运行下所需要的充放电电容,导致电路工作偏离E类最佳工作状态,功率和效率降低;Peter Haldi等人虽然采取了在片合成技术来增加输出功率,避免晶体管寄生和高电压可靠性问题,但在片变压器多采用无源结构,成倍的增加了芯片面积,提高了设计成本,而且CMOS工艺本身材料的低Q值,又会进一步增加不必要的功率损耗。It can be seen from the class E design formula that in order to enhance the output power of the class E power amplifier, the output power can be increased by increasing the power supply voltage, but in the deep submicron CMOS process, increasing the power supply voltage will act as an active The transistor of the switch is easily broken down, especially the drain output voltage of class E will reach a maximum of 3.562V cc ; although the on-resistance loss can be reduced by increasing the aspect ratio of the transistor, thereby approaching the maximum output power, but At RF frequencies, transistor size increases create serious parasitic capacitance problems, where gate parasitic capacitance reduces the switching speed of the PA switch, and the increased drain parasitic capacitance can exceed the charge and discharge required for ideal operation Capacitance, causing circuit work to deviate from the best working state of class E, reducing power and efficiency; although Peter Haldi and others adopted on-chip synthesis technology to increase output power and avoid transistor parasitics and high-voltage reliability problems, on-chip transformers are mostly used. The passive structure doubles the chip area and increases the design cost, and the low Q value of the material of the CMOS process itself will further increase unnecessary power loss.

综上,E类功放最大输出功率有一个极限值,要想提高输出功率,就需要增加电源电压。然而,在纳米CMOS工艺下,电源电压受限,从而限制最大输出功率。因此更多研究放在给定电源的前提下,如何减少损耗去逼近理想E类功放。尽管减少了损耗,但只能逼近而无法突破理论上的最大输出功率,同时增加功放管的宽长比等技术,在减少的损耗的同时,却又降低了功放管的工作速度。To sum up, the maximum output power of class E power amplifier has a limit value. In order to increase the output power, it is necessary to increase the power supply voltage. However, under the nano-CMOS process, the supply voltage is limited, thus limiting the maximum output power. Therefore, more research is placed on how to reduce the loss to approach the ideal class E power amplifier under the premise of a given power supply. Although the loss is reduced, it can only approach and cannot break through the theoretical maximum output power. At the same time, technologies such as increasing the width to length ratio of the power amplifier tube reduce the loss while reducing the working speed of the power amplifier tube.

发明内容SUMMARY OF THE INVENTION

本发明所要解决的技术问题在于克服现有技术的不足,提供一种电流注入式E类功率放大器,解决传统E类功率放大器输出功率受限于电源电压限制的问题,在不提升电源电压和改变最优负载电阻前提下,通过辅助电流定向注入技术提高输出功率。The technical problem to be solved by the present invention is to overcome the deficiencies of the prior art and provide a current injection type E-type power amplifier, which solves the problem that the output power of the traditional E-type power amplifier is limited by the power supply voltage limit, without increasing the power supply voltage and changing the Under the premise of the optimal load resistance, the output power is improved by the auxiliary current directional injection technology.

本发明具体采用以下技术方案解决上述技术问题:The present invention specifically adopts the following technical solutions to solve the above-mentioned technical problems:

一种电流注入式E类功率放大器,包括:电流源、射频扼流圈、由共源共栅的两个NMOS管组成的开关电路、包含泻放通路的辅助电流注入电路、无源匹配电路、负载电阻;由直流偏置信号接入电流源,且电流源经射频扼流圈连接至开关电路;所述开关电路接入输入开关信号后分别连接至辅助电流注入电路、无源匹配电路;所述辅助电流注入电路分别接入直流输入电流、注入控制信号、泄放控制信号,且辅助电流注入电路经无源匹配电路连接至功率放大器的输出端,所述功率放大器的输出端连接负载电阻;所述开关电路根据输入开关信号电平高低来控制其中一个NMOS管的导通和关断,同时辅助注入电流电路在该NMOS管关断时根据注入控制信号的高电平控制将直流输入电流同功率放大器产生的输出电流一并向负载电阻注入,同时根据泻放控制信号此时的低电平控制关闭泻放通路,及在该NMOS管导通时根据注入控制信号的低电平控制停止向负载电阻注入电流,同时根据泻放控制信号的高电平控制打开泻放通路,其中输入开关信号、注入控制信号、泄放控制信号均来自一组差分信号,以实现对电流注入周期的控制。A current injection type E power amplifier, comprising: a current source, a radio frequency choke coil, a switch circuit composed of two NMOS transistors with cascodes, an auxiliary current injection circuit including a discharge path, a passive matching circuit, load resistance; the DC bias signal is connected to the current source, and the current source is connected to the switch circuit through the radio frequency choke; the switch circuit is connected to the auxiliary current injection circuit and the passive matching circuit after being connected to the input switch signal; The auxiliary current injection circuit is respectively connected to the DC input current, the injection control signal, and the discharge control signal, and the auxiliary current injection circuit is connected to the output end of the power amplifier through the passive matching circuit, and the output end of the power amplifier is connected to the load resistance; The switch circuit controls the turn-on and turn-off of one of the NMOS transistors according to the level of the input switch signal, while the auxiliary injection current circuit controls the DC input current to the same level according to the high level of the injection control signal when the NMOS tube is turned off. The output current generated by the power amplifier is injected into the load resistor at the same time, and the bleeder path is closed according to the low level control of the bleeder control signal at this time, and when the NMOS transistor is turned on, it is controlled to stop the bleeder according to the low level of the injection control signal. The load resistor injects current, and at the same time, the bleeder path is opened according to the high level control of the bleeder control signal. The input switch signal, the injection control signal, and the bleeder control signal all come from a set of differential signals to control the current injection cycle.

进一步地,作为本发明的一种优选技术方案:所述开关电路包括NMOS管M1、NMOS管M2、隔直电容C1,其中NMOS管M1的栅极经隔直电容C1接入输入开关信号PA_SIGNAL,及NMOS管M1的栅极同时连接直流偏置电压PA_BIAS,NMOS管M1的漏极连接NMOS管M2的源级且NMOS管M1的源极接地;所述NMOS管M2的漏级经射频扼流圈连接至电流源,且NMOS管M2的栅极连接电流源后接地。Further, as a preferred technical solution of the present invention, the switch circuit includes an NMOS transistor M 1 , an NMOS transistor M 2 , and a DC blocking capacitor C 1 , wherein the gate of the NMOS transistor M 1 is connected through the DC blocking capacitor C 1 . The input switch signal PA_SIGNAL, and the gate of the NMOS transistor M1 are connected to the DC bias voltage PA_BIAS at the same time, the drain of the NMOS transistor M1 is connected to the source of the NMOS transistor M2 and the source of the NMOS transistor M1 is grounded; the NMOS transistor The drain stage of M 2 is connected to the current source through a radio frequency choke coil, and the gate of the NMOS transistor M 2 is connected to the current source and then grounded.

进一步地,作为本发明的一种优选技术方案:所述电流源包括PMOS管M3、滤波电阻R1和滤波电容C2,其中PMOS管M3的源极连接电源,其栅极连接直流偏置信号CSIN且其漏极分别连接射频扼流圈、滤波电阻R1的一端;所述滤波电阻R1的另一端分别连接至NMOS管M2的栅极、滤波电容C2的一端,且滤波电容C2的另一端接地。Further, as a preferred technical solution of the present invention: the current source includes a PMOS transistor M 3 , a filter resistor R 1 and a filter capacitor C 2 , wherein the source of the PMOS transistor M 3 is connected to the power supply, and the gate of the PMOS transistor M 3 is connected to the DC bias Set the signal CSIN and its drain is connected to the radio frequency choke coil and one end of the filter resistor R1 respectively ; the other end of the filter resistor R1 is respectively connected to the gate of the NMOS transistor M2 and one end of the filter capacitor C2 , and the filter The other end of capacitor C2 is grounded.

进一步地,作为本发明的一种优选技术方案:所述辅助电流注入电路包括由NMOS管M31、NMOS管M32构成的第一级电流镜像、由PMOS管M33、PMOS管M34构成的第二级电流镜像、由NMOS管M35和NMOS管M36构成的电流注入和泻放对管、第一限流电阻R2;其中,NMOS管M31的漏极和栅极短接后接入直流输入电流,且NMOS管M31的栅极与NMOS管M32的栅极连接,及二者源级均接地;所述PMOS管M33的漏极与NMOS管M32的漏极连接,同时PMOS管M33的栅极和漏极短接后接入PMOS管M34的栅极,且PMOS管M33的源极与PMOS管M34的源极均连接电源VDD;所述PMOS管M34的漏极分别连接NMOS管M35的漏极、NMOS管M36的漏极;所述NMOS管M35的栅极连接注入控制信号,且其源级连接开关电路;所述NMOS管M36的栅极连接泄放控制信号,及其源级连接第一限流电阻R2的一端,所述第一限流电阻R2的另一端接地。Further, as a preferred technical solution of the present invention: the auxiliary current injection circuit includes a first-level current mirror composed of an NMOS transistor M 31 and an NMOS transistor M 32 , a first-level current mirror composed of a PMOS transistor M 33 and a PMOS transistor M 34 . The second-level current mirror, the current injection and discharge pair composed of the NMOS transistor M 35 and the NMOS transistor M 36 , and the first current limiting resistor R 2 ; wherein the drain and the gate of the NMOS transistor M 31 are short-circuited and then connected to A DC input current is input, and the gate of the NMOS transistor M31 is connected to the gate of the NMOS transistor M32 , and the source stages of both are grounded; the drain of the PMOS transistor M33 is connected to the drain of the NMOS transistor M32 , At the same time, the gate and drain of the PMOS transistor M33 are short-circuited and then connected to the gate of the PMOS transistor M34 , and the source of the PMOS transistor M33 and the source of the PMOS transistor M34 are both connected to the power supply VDD; the PMOS transistor M34 is connected to the power supply VDD; The drain of 34 is respectively connected to the drain of the NMOS transistor M35 and the drain of the NMOS transistor M36 ; the gate of the NMOS transistor M35 is connected to the injection control signal, and its source is connected to the switch circuit; the NMOS transistor M36 Its gate is connected to the bleeder control signal, and its source is connected to one end of the first current limiting resistor R2 , and the other end of the first current limiting resistor R2 is grounded .

进一步地,作为本发明的一种优选技术方案:还包括用于产生输入开关信号的高低压转换及驱动电路,以及用于产生注入控制信号、泄放控制信号的驱动电路。Further, as a preferred technical solution of the present invention, it also includes a high-low voltage conversion and driving circuit for generating the input switch signal, and a driving circuit for generating the injection control signal and the discharge control signal.

进一步地,作为本发明的一种优选技术方案:所述高低压转换及驱动电路由若干组反相器串联构成,其中每组反相器由一个PMOS管和NMOS管组成,该PMOS管和NMOS管的栅极短接后连接整形信号,且两者漏极相连后将PMOS管的源极连接电源及NMOS管的源极接地,并将PMOS管和NMOS管的漏极相连且作为后一组反相器中PMOS管和NMOS管的栅极短接后的连接端;以及,将最后一组的反相器中PMOS管和NMOS管的漏极相连后作为输入开关信号的输出端。Further, as a preferred technical solution of the present invention: the high-low voltage conversion and drive circuit is composed of several groups of inverters in series, wherein each group of inverters is composed of a PMOS tube and an NMOS tube, and the PMOS tube and NMOS tube are composed of After the gate of the tube is short-circuited, the shaping signal is connected, and the drains of the two are connected, and then the source of the PMOS tube is connected to the power supply and the source of the NMOS tube is grounded, and the drain of the PMOS tube and the NMOS tube are connected as the latter group. The connection terminal after the gates of the PMOS tube and the NMOS tube in the inverter are short-circuited; and the drain of the PMOS tube and the NMOS tube in the last group of inverters is connected as the output terminal of the input switch signal.

进一步地,作为本发明的一种优选技术方案:所述无源匹配电路包括电容C3、电感L1和电容C4,其中电容C3的一端连接辅助电流注入电路且另一端连接电感L1的一端;所述电感L1的另一端分别连接电容C4的一端和功率放大器的输出端PAOUT,且电容C4的另一端接地。Further, as a preferred technical solution of the present invention: the passive matching circuit includes a capacitor C 3 , an inductor L 1 and a capacitor C 4 , wherein one end of the capacitor C 3 is connected to the auxiliary current injection circuit and the other end is connected to the inductor L 1 One end of the inductance L1 ; the other end of the inductance L1 is respectively connected to one end of the capacitor C4 and the output end PAOUT of the power amplifier, and the other end of the capacitor C4 is grounded.

本发明采用上述技术方案,能产生如下技术效果:The present invention adopts the above-mentioned technical scheme, and can produce the following technical effects:

本发明的电流注入式E类功率放大器,在开关电路的NMOS管M1导通时,关闭注入电流,使得注入电流不会流入晶体管,产生额外功耗;在NMOS管M1关断时,开启注入电流,同时在辅助注入电流电路向电源支路加入PMOS管组成的电流源,增加交流阻抗,使得直流输入电流同功率放大器产生的输出电流一并定向流入负载;E类功率放大器的输入开关信号,注入注入控制信号和泻放控制信号均来自同一组差分信号,经过驱动电路完成输出信号差分匹配,达到理想注入切换效果。In the current injection type E power amplifier of the present invention, when the NMOS transistor M1 of the switching circuit is turned on, the injection current is turned off, so that the injected current does not flow into the transistor, resulting in extra power consumption; when the NMOS transistor M1 is turned off, it is turned on . Inject current, and at the same time add a current source composed of PMOS transistors to the power supply branch in the auxiliary injection current circuit to increase the AC impedance, so that the DC input current and the output current generated by the power amplifier are directed into the load; the input switch signal of the class E power amplifier , the injection injection control signal and the discharge control signal come from the same group of differential signals, and the output signal differential matching is completed through the drive circuit to achieve the ideal injection switching effect.

本发明可改善传统E类功率放大器输出功率受限于击穿电压限制,而无法提高电源电压,同时在注入节点和电源之间的通路中增加电流源,保证注入电流定向流入负载电阻,可有效提高E类功放的输出功率,而不影响E类的基本结构和工作方式。The present invention can improve the output power of the traditional class E power amplifier, which is limited by the breakdown voltage, and cannot increase the power supply voltage. At the same time, a current source is added in the path between the injection node and the power supply to ensure that the injected current flows into the load resistance directionally, which can effectively Improve the output power of class E power amplifier without affecting the basic structure and working mode of class E.

附图说明Description of drawings

图1为现有技术中理想E类功放示意图。FIG. 1 is a schematic diagram of an ideal class E power amplifier in the prior art.

图2为本发明电流注入式E类功率放大器的原理示意图。FIG. 2 is a schematic diagram of the principle of the current injection type E power amplifier of the present invention.

图3为本发明电流注入式E类功率放大器的电路结构图。FIG. 3 is a circuit structure diagram of a current injection type E power amplifier of the present invention.

图4为本发明的辅助电流注入电路结构图。FIG. 4 is a structural diagram of an auxiliary current injection circuit of the present invention.

图5为本发明中输入开关信号所采用的高低压转换及驱动电路的电路结构图。FIG. 5 is a circuit structure diagram of a high-low voltage conversion and driving circuit used for inputting switching signals in the present invention.

图6为本发明中注入控制信号采用的驱动电路的电路结构图。FIG. 6 is a circuit structure diagram of a driving circuit used for injecting control signals in the present invention.

图7为本发明中泄放控制信号采用的驱动电路的电路结构图。FIG. 7 is a circuit structure diagram of a driving circuit adopted for the discharge control signal in the present invention.

具体实施方式Detailed ways

下面结合说明书附图对本发明的实施方式进行描述。Embodiments of the present invention will be described below with reference to the accompanying drawings.

如图2和3所示,本发明设计了一种电流注入式E类功率放大器,主要包括:电流源、射频扼流圈RF-Choke、由共源共栅的两个NMOS管组成的开关电路、包含泻放通路的辅助电流注入电路、无源匹配电路、负载电阻;由直流偏置信号接入电流源,且电流源经射频扼流圈连接至开关电路;所述开关电路接入输入开关信号后分别连接至辅助电流注入电路、无源匹配电路;所述辅助电流注入电路分别接入直流输入电流、注入控制信号、泄放控制信号,且辅助电流注入电路经无源匹配电路连接至功率放大器的输出端PAOUT,该输出端PAOUT连接实际的负载电阻。As shown in Figures 2 and 3, the present invention designs a current injection type E power amplifier, which mainly includes: a current source, a radio frequency choke coil RF-Choke, and a switch circuit composed of two cascode NMOS transistors , Auxiliary current injection circuit, passive matching circuit, load resistance including discharge path; connected to the current source by the DC bias signal, and the current source is connected to the switch circuit through the radio frequency choke; the switch circuit is connected to the input switch After the signal, it is respectively connected to the auxiliary current injection circuit and the passive matching circuit; the auxiliary current injection circuit is respectively connected to the DC input current, the injection control signal and the discharge control signal, and the auxiliary current injection circuit is connected to the power supply through the passive matching circuit. The output terminal PAOUT of the amplifier is connected to the actual load resistance.

具体地,如图3所示,所述开关电路,包括NMOS管M1、NMOS管M2、输入开关信号隔直电容C1;所述电流源包括PMOS管M3、滤波电阻R1和滤波电容C2;其中,NMOS管M1的栅极经隔直电容C1接入输入开关信号PA_SIGNAL,及NMOS管M1的栅极同时连接直流偏置电压PA_BIAS,NMOS管M1的漏极连接NMOS管M2的源级,且NMOS管M1的源极接地;所述NMOS管M2的漏级经射频扼流圈RF-Choke连接至电流源中PMOS管M3的漏极;PMOS管M3的源极连接电源Vcc,其栅极连接直流偏置信号CSIN,且PMOS管M3的漏极还连接至滤波电阻R1的一端;所述滤波电阻R1的另一端分别连接至NMOS管M2的栅极、滤波电容C2的一端,且滤波电容C2的另一端接地。其中,PMOS管M3漏极输出电压经过滤波电阻R1和滤波电容C2滤波后接共栅NMOS管M2的栅极作为电压自偏置直流信号。Specifically, as shown in FIG. 3 , the switch circuit includes an NMOS transistor M 1 , an NMOS transistor M 2 , and an input switch signal DC blocking capacitor C 1 ; the current source includes a PMOS transistor M 3 , a filter resistor R 1 and a filter Capacitor C 2 ; wherein, the gate of the NMOS transistor M 1 is connected to the input switch signal PA_SIGNAL through the DC blocking capacitor C 1 , and the gate of the NMOS transistor M 1 is connected to the DC bias voltage PA_BIAS at the same time, and the drain of the NMOS transistor M 1 is connected to The source stage of the NMOS tube M2 , and the source of the NMOS tube M1 is grounded; the drain stage of the NMOS tube M2 is connected to the drain of the PMOS tube M3 in the current source through the radio frequency choke coil RF-Choke; the PMOS tube The source of M3 is connected to the power supply Vcc, the gate of the M3 is connected to the DC bias signal CSIN, and the drain of the PMOS transistor M3 is also connected to one end of the filter resistor R1 ; the other ends of the filter resistor R1 are respectively connected to the NMOS The gate of the tube M 2 , one end of the filter capacitor C 2 , and the other end of the filter capacitor C 2 is grounded. The output voltage of the drain of the PMOS transistor M3 is filtered by the filter resistor R1 and the filter capacitor C2 and then connected to the gate of the common - gate NMOS transistor M2 as a voltage self-biased DC signal.

如图4所示,所述辅助电流注入电路的电路主要包括:由NMOS管M31、NMOS管M32构成的第一级电流镜像、由PMOS管M33、PMOS管M34构成的第二级电流镜像、由NMOS管M35和NMOS管M36构成的电流注入与泻放对管,及第一限流电阻R2;其中,NMOS管M31的漏极和栅极短接后接入直流输入电流IBIAS,且NMOS管M31的栅极与NMOS管M32的栅极连接,及二者源级均接地;所述PMOS管M33的漏极与NMOS管M32的漏极连接,同时PMOS管M33的栅极和漏极短接后接入PMOS管M34的栅极,且PMOS管M33的源极与PMOS管M34的源极均连接电源VDD;所述PMOS管M34的漏极分别连接NMOS管M35的漏极、NMOS管M36的漏极;所述NMOS管M35的栅极连接注入控制信号INJECT_SIGNAL,且其源级连接开关电路;所述NMOS管M36的栅极连接泄放控制信号DISCHARGR_SIGNAL,及其源级连接第一限流电阻R2的一端,所述第一限流电阻R2的另一端接地。由注入控制信号INJECT_SIGNAL控制注入电流的注入端开启和注入端关闭,由泄放控制信号DISCHARGR_SIGNAL控制泻放电流端的关闭和开启,并且输入开关信号、注入控制信号、泄放控制信号均来自一组差分信号,以实现对注入电流注入周期的精确控制。As shown in FIG. 4 , the circuit of the auxiliary current injection circuit mainly includes: a first-stage current mirror composed of NMOS transistors M 31 and NMOS transistors M 32 , and a second-stage current mirror composed of PMOS transistors M 33 and PMOS transistors M 34 . Current mirror, current injection and discharge pair tube composed of NMOS tube M35 and NMOS tube M36 , and first current limiting resistor R2 ; wherein, the drain and gate of NMOS tube M31 are short-circuited and connected to direct current The current IBIAS is input, and the gate of the NMOS transistor M31 is connected to the gate of the NMOS transistor M32 , and the sources of both are grounded; the drain of the PMOS transistor M33 is connected to the drain of the NMOS transistor M32, and at the same time The gate and drain of the PMOS transistor M33 are short-circuited and then connected to the gate of the PMOS transistor M34 , and the source of the PMOS transistor M33 and the source of the PMOS transistor M34 are both connected to the power supply VDD; the PMOS transistor M34 The drain of the NMOS transistor M35 is respectively connected to the drain of the NMOS transistor M35 and the drain of the NMOS transistor M36; the gate of the NMOS transistor M35 is connected to the injection control signal INJECT_SIGNAL , and its source is connected to the switch circuit; the NMOS transistor M36 Its gate is connected to the bleeder control signal DISCHARGR_SIGNAL, and its source is connected to one end of the first current limiting resistor R2 , and the other end of the first current limiting resistor R2 is grounded . The injection control signal INJECT_SIGNAL controls the opening and closing of the injection end of the injection current, and the discharge control signal DISCHARGR_SIGNAL controls the closing and opening of the discharge current end, and the input switch signal, injection control signal, and discharge control signal are all from a set of differential signal to achieve precise control of the injection current injection period.

所述无源匹配电路的电路,如图3所示,主要包括电容C3、电感L1和电容C4,其中电容C3的一端连接辅助电流注入电路中NMOS管M35的源极和NMOS管M2的漏极,且另一端连接电感L1的一端;所述电感L1的另一端分别连接电容C4的一端和功率放大器的输出端PAOUT,输出端PAOUT连接实际负载电阻,且电容C4的另一端接地。The circuit of the passive matching circuit, as shown in FIG. 3 , mainly includes a capacitor C 3 , an inductor L 1 and a capacitor C 4 , wherein one end of the capacitor C 3 is connected to the source of the NMOS transistor M 35 in the auxiliary current injection circuit and the NMOS The drain of the tube M2 , and the other end is connected to one end of the inductance L1 ; the other end of the inductance L1 is respectively connected to one end of the capacitor C4 and the output end PAOUT of the power amplifier, the output end PAOUT is connected to the actual load resistance, and the capacitance The other end of C 4 is grounded.

本发明的功率放大器,还包括用于产生输入开关信号的高低压转换及驱动电路,及用于产生注入控制信号、泄放控制信号的驱动电路。其中,所述高低压转换及驱动电路由若干组反相器串联构成,本实施例中采用七组反相器串联的结构,其中每组反相器由一个PMOS管和NMOS管组成,该PMOS管和NMOS管的栅极短接后连接需要整形的信号,且两者漏极相连后PMOS管的源极连接电源及NMOS管的源极接地,并将PMOS管和NMOS管的漏极相连且作为后一组反相器中PMOS管和NMOS管的栅极短接后的连接端;以及,将最后一组的反相器中PMOS管和NMOS管的漏极相连后作为输入开关信号的输出端。The power amplifier of the present invention further includes a high-low voltage conversion and driving circuit for generating the input switch signal, and a driving circuit for generating the injection control signal and the discharge control signal. Wherein, the high-low voltage conversion and driving circuit is composed of several groups of inverters in series. In this embodiment, a structure of seven groups of inverters is used in series, wherein each group of inverters is composed of a PMOS transistor and an NMOS transistor. After the gate of the tube and the NMOS tube are short-circuited, the signal that needs to be shaped is connected, and after the drains of the two are connected, the source of the PMOS tube is connected to the power supply and the source of the NMOS tube is grounded, and the drain of the PMOS tube and the NMOS tube are connected and As the connection terminal after the gates of the PMOS tube and the NMOS tube in the latter group of inverters are short-circuited; and, after connecting the drains of the PMOS tube and the NMOS tube in the last group of inverters as the output of the input switch signal end.

如图5所示,为本发明中输入开关信号采用的高低压转换及驱动电路的电路结构,其由七组反相器串联形成,其中M0、M01、M5、M7、M9、M11、M13分别是各反相器中的PMOS管,M4、M41、M6、M8、M10、M12、M14分别是各反相器中NMOS管。具体的,第一组反相器中PMOS管M0的栅极和NMOS管M4的栅极短接后连接整形信号INJP,且PMOS管M0的源极连接电源OVDD,NMOS管M4的源极接地,且PMOS管M0和NMOS管M4的漏极相连并作为连接端连接下一组反相器中PMOS管M01的栅极和NMOS管M41的栅极,依次类推,可得出7组反相器串联的结构,并将最后一组反相器中PMOS管M13和NMOS管M14的漏极相连后作为输入开关信号PA_SIGNAL的输出端。其中,七级反相器中的前两级反相器组成的高低压转换电路,后五级反相器组成的驱动整形电路,两级反相器组成的高低压转换电路PMOS管尺寸为3比1逐级递减,NMOS管尺寸1:1逐级相同,五组驱动整形电路逐级尺寸成2倍关系递增。五组反相器逐级对输入信号进行整形,整形后的开关信号接近理想开关的方波信号,经过五级推挽式的放大,信号功率增强,达到驱动效果。As shown in FIG. 5, it is the circuit structure of the high and low voltage conversion and driving circuit used for the input switch signal in the present invention, which is formed by seven groups of inverters connected in series, wherein M0, M01, M5, M7, M9, M11, M13 are respectively It is the PMOS tube in each inverter, and M4, M41, M6, M8, M10, M12, and M14 are the NMOS tubes in each inverter. Specifically, the gate of the PMOS transistor M0 and the gate of the NMOS transistor M4 in the first group of inverters are short-circuited and then connected to the shaping signal INJP, and the source of the PMOS transistor M0 is connected to the power supply OVDD, and the source of the NMOS transistor M4 is grounded. And the drains of the PMOS transistor M0 and the NMOS transistor M4 are connected and used as the connecting terminal to connect the gate of the PMOS transistor M01 and the gate of the NMOS transistor M41 in the next group of inverters, and so on, it can be concluded that 7 groups of inverters are connected in series structure, and connect the drains of the PMOS transistor M13 and the NMOS transistor M14 in the last group of inverters as the output end of the input switch signal PA_SIGNAL. Among them, the high and low voltage conversion circuit composed of the first two stages of inverters in the seven-stage inverter, the drive shaping circuit composed of the last five stages of inverters, and the high and low voltage conversion circuit composed of two stages of inverters The size of the PMOS tube is 3 The ratio of 1 decreases step by step, the size of the NMOS tube is the same step by step at 1:1, and the size of the five groups of drive shaping circuits increases by 2 times. Five groups of inverters shape the input signal step by step, and the shaped switching signal is close to the square wave signal of the ideal switch. After five stages of push-pull amplification, the signal power is enhanced to achieve the driving effect.

如图6所示,为本发明中注入控制信号采用的驱动电路的电路结构,其由四组反相器串联组成,其中M15、M17、M19、M21为各反相器中的PMOS管,M16、M18、M20、M22分别是各反相器中NMOS管。具体的,第一组反相器中PMOS管M15的栅极和NMOS管M26的栅极短接后连接整形信号INJP,且PMOS管M15的源极连接电源VDD,NMOS管M16的源极接地,且PMOS管M15和NMOS管M16的漏极相连并作为连接端连接下一组反相器中PMOS管M17的栅极和NMOS管M18的栅极,依次类推,可得出4组反相器串联的结构,并将最后一组反相器中PMOS管M21和NMOS管M22的漏极相连后作为输出端,以输出注入控制信号INJECT_SIGNAL。其中,四组反相器组成的驱动整形电路逐级尺寸也成2倍关系递增。As shown in FIG. 6, it is the circuit structure of the driving circuit used for injecting control signals in the present invention, which is composed of four groups of inverters connected in series, wherein M15, M17, M19, and M21 are PMOS tubes in each inverter, and M16 , M18, M20, and M22 are NMOS tubes in each inverter respectively. Specifically, the gate of the PMOS transistor M15 and the gate of the NMOS transistor M26 in the first group of inverters are short-circuited and then connected to the shaping signal INJP, and the source of the PMOS transistor M15 is connected to the power supply VDD, and the source of the NMOS transistor M16 is grounded. And the drains of the PMOS transistor M15 and the NMOS transistor M16 are connected and used as the connection terminal to connect the gate of the PMOS transistor M17 and the gate of the NMOS transistor M18 in the next group of inverters, and so on, it can be concluded that 4 groups of inverters are connected in series structure, and connect the drains of the PMOS transistor M21 and the NMOS transistor M22 in the last group of inverters as an output terminal to output the injection control signal INJECT_SIGNAL. Among them, the size of the drive shaping circuit composed of four groups of inverters is also increased by 2 times.

如图7所示,为本发明中泄放控制信号采用的驱动电路的电路结构,其由四组反相器串联组成,M23、M25、M27、M29分别是各反相器中的PMOS管,M24、M26、M28、M30分别是各反相器中NMOS管。其连接与注入控制信号采用的高低压转换驱动电路的电路相同,最终输出泄放控制信号DISCHARG_SIGNAL。其中,四组反相器组成的驱动整形电路逐级尺寸也成2倍关系递增。As shown in FIG. 7, it is the circuit structure of the driving circuit used for the discharge control signal in the present invention, which is composed of four groups of inverters connected in series. M23, M25, M27, and M29 are the PMOS tubes in each inverter, respectively. M24, M26, M28, and M30 are NMOS tubes in each inverter respectively. Its connection is the same as the circuit of the high-low voltage conversion drive circuit used for the injection control signal, and finally outputs the discharge control signal DISCHARG_SIGNAL. Among them, the size of the drive shaping circuit composed of four groups of inverters is also increased by 2 times.

本发明的工作原理是:所述开关电路根据输入开关信号电平高低来控制其中一个NMOS管的导通和关断,同时辅助注入电流电路在该NMOS管关断时根据注入控制信号的高电平控制将直流输入电流同功率放大器产生的输出电流一并向负载电阻注入,同时根据泻放控制信号此时的低电平关闭泻放通路,及在该NMOS管开启时根据注入控制信号的低电平控制停止向负载电阻注入电流,同时根据泻放控制信号的高电平打开泻放通路,其中输入开关信号、注入控制信号、泄放控制信号均来自一组差分信号,以实现对注入电流注入周期的控制。The working principle of the present invention is as follows: the switch circuit controls the turn-on and turn-off of one of the NMOS transistors according to the level of the input switch signal, while the auxiliary injection current circuit is based on the high level of the injection control signal when the NMOS transistor is turned off. The level control injects the DC input current together with the output current generated by the power amplifier into the load resistor, and at the same time closes the bleeder path according to the low level of the bleeder control signal at this time, and when the NMOS tube is turned on, according to the low level of the injection control signal. The level control stops injecting current into the load resistor, and at the same time opens the bleeder path according to the high level of the bleeder control signal, wherein the input switch signal, injection control signal, and bleeder control signal are all from a set of differential signals to realize the injection current. Injection cycle control.

所述NMOS管M1的输入开关信号、注入与泻放控制信号均相关,且来自同一组差分输入信号,其中NMOS管M1的输入开关信号与注入控制信号输入均来自于差分正端信号,泻放控制信号来自差分负端信号,以达到注入电流在NMOS管M1关断周期内精确向负载电阻注入电流的目的,同时在NMOS管M1开启时关断注入电流,同时打开泻放电流通路,使多余电流顺利流出,防止切换瞬间高压击穿NMOS管M35,具体控制过程如下: The input switch signal, injection and discharge control signals of the NMOS transistor M1 are all related and come from the same group of differential input signals, wherein the input switch signal and the injection control signal input of the NMOS transistor M1 are all from the differential positive terminal signal, The discharge control signal comes from the differential negative terminal signal, so as to achieve the purpose of accurately injecting current into the load resistor during the off period of the NMOS transistor M1, and at the same time, the injection current is turned off when the NMOS transistor M1 is turned on , and the discharge current is turned on at the same time. circuit, so that the excess current can flow out smoothly and prevent the high-voltage breakdown of the NMOS tube M 35 at the moment of switching. The specific control process is as follows:

(1)开关晶体管关断期间:根据E类开关工作模式原理,如图3所示,在输入开关信号使NMOS管M1关断时,射频扼流圈RF-Choke储存的电荷经匹配电路向负载电阻充电,辅助电流注入电路根据注入控制信号INJECT_SIGNAL此时的高电平使NMOS管M35导通,将直流输入电流输出至NMOS管M2的漏端,同时泻放控制信号DISCHARG_SIGNAL此时转换为低电平使NMOS管M36关断,电流泻放通路关闭。当注入电流进入NMOS管M2漏极后,E类自身漏极输出电流合并直流输入电流一起经匹配电路向负载电阻注入。(1) During the off period of the switching transistor: According to the principle of the E-type switching operating mode, as shown in Figure 3 , when the input switch signal turns off the NMOS tube M1, the charge stored in the RF choke coil RF-Choke is transferred to the matching circuit through the matching circuit. The load resistor is charged, and the auxiliary current injection circuit turns on the NMOS transistor M35 according to the high level of the injection control signal INJECT_SIGNAL at this time, and outputs the DC input current to the drain of the NMOS transistor M2 , while the discharge control signal DISCHARG_SIGNAL is converted at this time. For the low level, the NMOS transistor M36 is turned off, and the current discharge path is closed. When the injected current enters the drain of the NMOS transistor M 2 , the output current of the E-type self-drain combined with the DC input current is injected into the load resistor through the matching circuit.

(2)开关晶体管导通期间:在输入开关信号使NMOS管M1导通时,辅助电流注入电路根据注入控制信号INJECT_SIGNAL此时的低电平使注入电流停止向NMOS管M2漏极注入,注入截止,使得注入电流不会流向NMOS管M2,E类功率放大器继续保持传统工作状态。同时泻放控制信号DISCHARG_SIGNAL此时转换为高电平,泻放通路开启,泻放管中NMOS M36导通,使得电流顺利流出,避免电流注入和截止瞬间产生高电压击穿NMOS管M35。并且,辅助电流注入电路中加入第一限流电阻R2进一步减小泻放电流值,使得泻放通路PMOS管M34和M36的漏极电压远离击穿电压值。( 2 ) During the conduction period of the switching transistor: when the input switch signal turns on the NMOS tube M1, the auxiliary current injection circuit stops the injection current to the drain of the NMOS tube M2 according to the low level of the injection control signal INJECT_SIGNAL at this time, The injection is turned off, so that the injection current does not flow to the NMOS transistor M 2 , and the class E power amplifier continues to maintain the traditional working state. At the same time, the discharge control signal DISCHARG_SIGNAL is converted to a high level at this time, the discharge path is opened, and the NMOS M 36 in the discharge tube is turned on, so that the current flows out smoothly, and the high voltage breakdown of the NMOS tube M 35 at the moment of current injection and cut-off is avoided. In addition, the first current limiting resistor R2 is added to the auxiliary current injection circuit to further reduce the discharge current value, so that the drain voltages of the discharge path PMOS transistors M34 and M36 are far away from the breakdown voltage value.

(3)电流注入电路控制过程:NMOS管M31和M32在开关晶体管关断和导通的整个周期内保持直流输入电流IBIAS第一级镜像,PMOS管M33和M34保持直流输入电流第二级镜像,使得直流输入电流最终镜像到PMOS管M34的漏极,以及注入控制NMOS管M35和泻放控制管M36的漏极。电流注入NMOS管M35栅极等待与功放输入开关信号同频率且相位相反的控制信号,控制信号电平的高低控制注入NMOS管M35的注入和截止,同时电流泻放NMOS管M36栅极等待与输入开关信号同频率且相位相同的控制信号,控制信号电平的高低控制泻放NMOS管M36的导通和关断。第一限流电阻R2降低泻放通路导通时的泻放电流,使得PMOS管M34以及NMOS管M36的漏极电压在电流泻放时处于可靠性电压范围内。(3) Current injection circuit control process: NMOS transistors M 31 and M 32 maintain the first-level mirror image of the DC input current IBIAS during the entire period when the switching transistor is turned off and on, and the PMOS transistors M 33 and M 34 maintain the first-level mirror of the DC input current. Secondary mirroring, so that the DC input current is finally mirrored to the drain of the PMOS transistor M34 , and the drains of the injection control NMOS transistor M35 and the discharge control transistor M36 . The gate of the current injection NMOS tube M35 waits for a control signal with the same frequency and opposite phase as the power amplifier input switch signal. The level of the control signal controls the injection and cut-off of the NMOS tube M35 , and the current discharges the gate of the NMOS tube M36 . Waiting for a control signal with the same frequency and phase as the input switch signal, the level of the control signal controls the on and off of the discharge NMOS transistor M36 . The first current limiting resistor R2 reduces the discharge current when the discharge path is turned on, so that the drain voltages of the PMOS transistor M34 and the NMOS transistor M36 are within a reliable voltage range when the current is discharged.

因此,本发明依据E类电路工作特点,当开关关断时,利用辅助电流注入电路和E类本身转换电流一起向负载充电,开关导通则停止电流注入,注入同时加入PMOS电流源使得注入电流定向流入负载。最终,本次发明在不提升电源电压和降低最优负载阻抗、改变E类工作模式的前提下提高了E类功率放大器的输出功率。Therefore, according to the working characteristics of the E-class circuit, the present invention uses the auxiliary current injection circuit and the E-class itself to convert the current to charge the load when the switch is turned off. When the switch is turned on, the current injection is stopped, and the PMOS current source is added at the same time to make the injection current. Directional flow into the load. Finally, the present invention improves the output power of the class-E power amplifier without increasing the power supply voltage, reducing the optimal load impedance, and changing the class-E working mode.

综上,本发明采用电流定向注入式技术可以在不增加电源电压和变化E类最优负载的前提下,提升输出功率;在功率放大器开关关断半个周期内注入电流,加入PMOS电流源使得注入电流定向流入负载;在功率放大器开关开启半个周期停止注入,保证晶体管不消耗多余能量。从而在保证E类开关模式工作的前提下,通过外部注入方式提升功率。可以避免由于CMOS工艺中MOS管击穿电压过低,输出功率受限于电源电压的情况。其功率提升采用外部注入方式,不打破传统E类结构和工作方式,同时突破理论输出功率极限值。To sum up, the present invention adopts the current directional injection technology to improve the output power without increasing the power supply voltage and changing the optimal load of class E; injecting current during the half cycle of the power amplifier switch off, adding a PMOS current source makes The injection current flows into the load directionally; the injection is stopped in the half cycle of the power amplifier switch on to ensure that the transistor does not consume excess energy. Therefore, on the premise of ensuring the operation of the class E switch mode, the power is increased by an external injection method. It can avoid the situation that the output power is limited by the power supply voltage because the breakdown voltage of the MOS transistor in the CMOS process is too low. Its power boost adopts the external injection method, which does not break the traditional E-class structure and working method, and breaks through the theoretical output power limit value at the same time.

上面结合附图对本发明的实施方式作了详细说明,但是本发明并不限于上述实施方式,在本领域普通技术人员所具备的知识范围内,还可以在不脱离本发明宗旨的前提下做出各种变化。The embodiments of the present invention have been described in detail above in conjunction with the accompanying drawings, but the present invention is not limited to the above-mentioned embodiments, and can also be made within the scope of knowledge possessed by those of ordinary skill in the art without departing from the purpose of the present invention. Various changes.

Claims (7)

1.一种电流注入式E类功率放大器,其特征在于,包括:电流源、射频扼流圈、由共源共栅的两个NMOS管组成的开关电路、包含泻放通路的辅助电流注入电路、无源匹配电路、负载电阻;由直流偏置信号接入电流源,且电流源经射频扼流圈连接至开关电路;所述开关电路接入输入开关信号后分别连接至辅助电流注入电路、无源匹配电路;所述辅助电流注入电路分别接入直流输入电流、注入控制信号、泄放控制信号,且辅助电流注入电路经无源匹配电路连接至功率放大器的输出端,所述功率放大器的输出端连接负载电阻;所述开关电路根据输入开关信号电平高低来控制其中一个NMOS管的导通和关断,同时辅助注入电流电路在该NMOS管关断时根据注入控制信号的高电平控制将直流输入电流同功率放大器产生的输出电流一并向负载电阻注入,同时根据泻放控制信号此时的低电平控制关闭泻放通路,及在该NMOS管导通时根据注入控制信号的低电平控制停止向负载电阻注入电流,同时根据泻放控制信号的高电平控制打开泻放通路,其中输入开关信号、注入控制信号、泄放控制信号均来自一组差分信号,以实现对电流注入周期的控制。1. A current injection type E-class power amplifier is characterized in that, comprising: a current source, a radio frequency choke coil, a switch circuit composed of two NMOS tubes of a cascode, an auxiliary current injection circuit comprising a discharge path , passive matching circuit, load resistance; the DC bias signal is connected to the current source, and the current source is connected to the switch circuit through the radio frequency choke; the switch circuit is connected to the auxiliary current injection circuit, A passive matching circuit; the auxiliary current injection circuit is respectively connected to the DC input current, the injection control signal, and the discharge control signal, and the auxiliary current injection circuit is connected to the output end of the power amplifier through the passive matching circuit, and the power amplifier is connected to the output end of the power amplifier. The output end is connected to the load resistor; the switch circuit controls the on and off of one of the NMOS transistors according to the level of the input switch signal, and the auxiliary injection current circuit is based on the high level of the injection control signal when the NMOS transistor is turned off Control to inject the DC input current together with the output current generated by the power amplifier into the load resistor, and at the same time control to close the bleeder path according to the low level of the bleeder control signal at this time, and when the NMOS transistor is turned on, according to the injection control signal. The low-level control stops injecting current into the load resistor, and at the same time, the bleeder path is opened according to the high-level control of the bleeder control signal. Control of the current injection period. 2.根据权利要求1所述电流注入式E类功率放大器,其特征在于:所述开关电路包括NMOS管M1、NMOS管M2、隔直电容C1,其中NMOS管M1的栅极经隔直电容C1接入输入开关信号PA_SIGNAL,及NMOS管M1的栅极同时连接直流偏置电压PA_BIAS,NMOS管M1的漏极连接NMOS管M2的源级且NMOS管M1的源极接地;所述NMOS管M2的漏级经射频扼流圈连接至电流源,且NMOS管M2的栅极连接电流源后接地。2 . The current injection type E power amplifier according to claim 1 , wherein the switch circuit comprises an NMOS transistor M 1 , an NMOS transistor M 2 , and a DC blocking capacitor C 1 , wherein the gate of the NMOS transistor M 1 is connected through a The DC blocking capacitor C1 is connected to the input switch signal PA_SIGNAL , the gate of the NMOS transistor M1 is connected to the DC bias voltage PA_BIAS at the same time, the drain of the NMOS transistor M1 is connected to the source of the NMOS transistor M2 and the source of the NMOS transistor M1 The electrode is grounded; the drain stage of the NMOS transistor M2 is connected to the current source through a radio frequency choke coil, and the gate of the NMOS transistor M2 is connected to the current source and then grounded. 3.根据权利要求2所述电流注入式E类功率放大器,其特征在于:所述电流源包括PMOS管M3、滤波电阻R1和滤波电容C2,其中PMOS管M3的源极连接电源,其栅极连接直流偏置信号CSIN且其漏极分别连接射频扼流圈、滤波电阻R1的一端;所述滤波电阻R1的另一端分别连接至NMOS管M2的栅极、滤波电容C2的一端,且滤波电容C2的另一端接地。3. The current injection type E power amplifier according to claim 2, wherein the current source comprises a PMOS transistor M 3 , a filter resistor R 1 and a filter capacitor C 2 , wherein the source of the PMOS transistor M 3 is connected to a power supply , its gate is connected to the DC bias signal CSIN and its drain is connected to the radio frequency choke coil and one end of the filter resistor R 1 respectively; the other end of the filter resistor R 1 is respectively connected to the gate of the NMOS tube M 2 and the filter capacitor One end of C2, and the other end of the filter capacitor C2 is grounded. 4.根据权利要求1所述电流注入式E类功率放大器,其特征在于:所述辅助电流注入电路包括由NMOS管M31、NMOS管M32构成的第一级电流镜像、由PMOS管M33、PMOS管M34构成的第二级电流镜像、由NMOS管M35和NMOS管M36构成的电流注入和泻放对管、第一限流电阻R2;其中,NMOS管M31的漏极和栅极短接后接入直流输入电流,且NMOS管M31的栅极与NMOS管M32的栅极连接,及二者源级均接地;所述PMOS管M33的漏极与NMOS管M32的漏极连接,同时PMOS管M33的栅极和漏极短接后接入PMOS管M34的栅极,且PMOS管M33的源极与PMOS管M34的源极均连接电源VDD;所述PMOS管M34的漏极分别连接NMOS管M35的漏极、NMOS管M36的漏极;所述NMOS管M35的栅极连接注入控制信号,且其源级连接开关电路;所述NMOS管M36的栅极连接泄放控制信号,及其源级连接第一限流电阻R2的一端,所述第一限流电阻R2的另一端接地。4 . The current injection type E power amplifier according to claim 1 , wherein the auxiliary current injection circuit comprises a first-stage current mirror composed of an NMOS transistor M 31 and an NMOS transistor M 32 , and a PMOS transistor M 33 . , the second-level current mirror formed by the PMOS tube M34 , the current injection and discharge pair tube formed by the NMOS tube M35 and the NMOS tube M36 , and the first current limiting resistor R2 ; wherein, the drain of the NMOS tube M31 After being short-circuited with the gate, the DC input current is connected, and the gate of the NMOS tube M31 is connected to the gate of the NMOS tube M32 , and the source stages of both are grounded; the drain of the PMOS tube M33 is connected to the NMOS tube. The drain of M32 is connected, while the gate and drain of the PMOS transistor M33 are short-circuited and then connected to the gate of the PMOS transistor M34 , and the source of the PMOS transistor M33 and the source of the PMOS transistor M34 are both connected to the power supply VDD; the drain of the PMOS transistor M34 is respectively connected to the drain of the NMOS transistor M35 and the drain of the NMOS transistor M36 ; the gate of the NMOS transistor M35 is connected to the injection control signal, and its source is connected to the switch circuit ; The gate of the NMOS transistor M36 is connected to the discharge control signal, and its source is connected to one end of the first current limiting resistor R2, and the other end of the first current limiting resistor R2 is grounded . 5.根据权利要求1所述电流注入式E类功率放大器,其特征在于:还包括用于产生输入开关信号的高低压转换及驱动电路,以及用于产生注入控制信号、泄放控制信号的驱动电路。5. The current injection type class E power amplifier according to claim 1, characterized in that: further comprising a high-low voltage conversion and driving circuit for generating the input switch signal, and a driving circuit for generating the injection control signal and the discharge control signal circuit. 6.根据权利要求5所述电流注入式E类功率放大器,其特征在于:所述高低压转换及驱动电路由若干组反相器串联构成,其中每组反相器由一个PMOS管和NMOS管组成,该PMOS管和NMOS管的栅极短接后连接整形信号,且两者漏极相连后将PMOS管的源极连接电源及NMOS管的源极接地,并将PMOS管和NMOS管的漏极相连且作为后一组反相器中PMOS管和NMOS管的栅极短接后的连接端;以及,将最后一组的反相器中PMOS管和NMOS管的漏极相连后作为输入开关信号的输出端。6 . The current injection type E power amplifier according to claim 5 , wherein the high-low voltage conversion and driving circuit is composed of several groups of inverters connected in series, wherein each group of inverters is composed of a PMOS transistor and an NMOS transistor. 7 . The gate of the PMOS tube and the NMOS tube are short-circuited and then connected to the shaping signal, and after the drains of the two are connected, the source of the PMOS tube is connected to the power supply and the source of the NMOS tube is grounded, and the drain of the PMOS tube and the NMOS tube are connected to the ground. The poles are connected and used as the connection terminal after the gates of the PMOS tube and the NMOS tube in the latter group of inverters are short-circuited; and, the drain of the PMOS tube and the NMOS tube in the last group of inverters are connected as an input switch. signal output. 7.根据权利要求1所述电流注入式E类功率放大器,其特征在于:所述无源匹配电路包括电容C3、电感L1和电容C4,其中电容C3的一端连接辅助电流注入电路且另一端连接电感L1的一端;所述电感L1的另一端分别连接电容C4的一端和功率放大器的输出端PAOUT,且电容C4的另一端接地。7. The current injection type E power amplifier according to claim 1, wherein the passive matching circuit comprises a capacitor C 3 , an inductor L 1 and a capacitor C 4 , wherein one end of the capacitor C 3 is connected to the auxiliary current injection circuit The other end is connected to one end of the inductor L1 ; the other end of the inductor L1 is connected to one end of the capacitor C4 and the output end PAOUT of the power amplifier respectively, and the other end of the capacitor C4 is grounded.
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