CN115589134B - E-type inverter cascade resonance driving structure and design method - Google Patents
E-type inverter cascade resonance driving structure and design method Download PDFInfo
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
- H02M1/0058—Transistor switching losses by employing soft switching techniques, i.e. commutation of transistors when applied voltage is zero or when current flow is zero
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
- H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
- H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2176—Class E amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The invention discloses a cascade resonance driving structure of an E-type inverter and a design method, and belongs to the technical field of radio frequency power amplifiers. The structure provided by the invention comprises: the system comprises a first-stage class-E inverter and a second-stage class-E inverter, wherein the output of the first-stage class-E inverter is connected with the drain and source of a MOS tube of the second-stage class-E inverter. The first-stage class E inverter completes load matching and realizes driving through the input impedance matching circuit, and the second-stage class E inverter completes load matching and realizes radio frequency output through the output impedance matching circuit. In order to optimize the performance of the circuit structure, a design method of a cascade resonance driving structure of an E-type inverter is provided, so that the circuit can stably operate, and the efficiency of the circuit is improved.
Description
Technical Field
The invention belongs to the technical field of radio frequency power amplifiers, and particularly relates to a cascaded resonance driving structure of an E-type inverter and a design method.
Background
The radio frequency power supply is an important device in the semiconductor manufacturing process flow, and relates to an ion implantation process and a film deposition process. The radio frequency power supply can output alternating current with the frequency of several MHz to tens of MHz, and the power level can reach 1kW to 10kW generally. A key part of the radio frequency power supply is the power amplifier. Under the condition of high switching frequency, the switching loss of the power amplifier is large, the class E inverter realizes soft switching through passive element resonance, has smaller switching loss, and is widely applied to radio frequency power supplies nowadays.
However, in high-power applications, the input capacitance of the MOS transistor is large, and the driving frequency is high, so that the driving is difficult to design. Under the frequency of several MHz to tens MHz, the switching period is 10 ns-1000 ns, and in order to realize traditional square wave driving, large current charge and discharge are required to be carried out on an input capacitor, and the common square wave driving method is difficult to realize. So the scholars have proposed the concept of resonant driving, with sinusoidal voltages to achieve radio frequency driving. In order to accurately design the driving power and the element parameters of the resonance driving circuit, the input impedance of the MOS tube needs to be accurately measured. However, at high frequencies, the values of the input impedance and the values in the data book are far from each other, and are affected by parasitic parameters such as parasitic capacitance, parasitic inductance, parasitic resistance, and the like. When the operating state (such as drain-source voltage and switching frequency) of the MOS transistor is changed, the input impedance of the MOS transistor is also changed, which makes the input impedance more difficult to measure.
In FIG. 6, an ideal E-type inverter is shown, wherein a switching frequency f and a DC input voltage V are designed CC The output power is P O The quality factor of the series resonance is Q L ＝ωL 0 /R 0 ＝1/ωC 0 R 0 The parameters of all elements in fig. 6 can be uniquely determined. Actual load Z L Often with R 0 Not equal, so it is necessary to design an impedance matching network as shown in FIG. 7 to match Z L Matching to Z DS ＝R 0 +jx, making the two circuits equivalent. In addition, under the influence of the on-resistance and the output capacitance of the MOS tube, the parameters of the class E inverter can not realize soft switching under ideal conditions, and when the drain-source voltage is not reduced to 0 due to resonance, the switch is turned on, so that the voltage suddenly drops to 0. In practical applications, therefore, it is necessary to find the appropriate shunt capacitance C again 1 And drain-source impedance Z DS The MOS tube can realize soft switching.
Currently, application number US07454614, patent name Driver for a high efficiency, high frequency Class-D power amplifier, is used to solve the problem of radio frequency driving, and a driver of a class D power amplifier is proposed, which uses transformer coupling to implement a sinusoidal driving signal that two MOS transistors of the class D power amplifier differ by 180 °, and the driver can use a class E power amplifier and a class D power amplifier to provide a sinusoidal wave. The patent describes a cascade resonance driving structure and a design method of an E-type inverter, the E-type inverter is used for driving the E-type inverter, and an optimization scheme and a design method of the structure are provided in combination with the basic requirement of the E-type inverter on actual operation.
Disclosure of Invention
Aiming at the problems, the invention provides a cascade resonance driving structure of an E-type inverter, and driving power can be flexibly adjusted through parameters of an adjusting element. In order to optimize the performance of the circuit structure, a design method of a cascade resonance driving structure of an E-type inverter is provided, so that the circuit can stably operate, and the efficiency of the circuit is improved.
The invention provides a cascade resonance driving structure of an E-class inverter, which comprises a first-stage E-class inverter and a second-stage E-class inverter:
the first stage E-type inverter comprises a direct current input voltage source V CC1 Radio frequency choke RFC1 and MOS tube S 1 Drive circuit, parallel capacitor C 1 An input impedance matching circuit;
the second-stage class E inverter comprises a direct-current input voltage source V CC2 Radio frequency choke RFC2, MOS tube S 2 Parallel capacitor C 2 Output impedance matching circuit and load R L ；
DC input voltage source V CC1 Through the RF choke RFC1 and the MOS tube S 1 Is connected with the drain electrode of the transistor; drive circuit with duty ratio of 0.5 and MOS tube S 1 Is connected with the grid electrode of the MOS tube S 1 Switching on and off at corresponding switching frequencies; parallel capacitor C 1 And MOS tube S 1 The drain and the source are connected; the input impedance matching network is connected with the MOS tube S of the second-stage E-type inverter 2 Gate-source and parallel capacitance C of (C) 1 Between, DC input voltage source V CC2 Through RF choke RFC2 and MOS tube S 2 Is connected with the drain electrode of the transistor; parallel capacitor C 2 And MOS tube S 2 The drain and the source are connected; the output impedance matching network is connected with the load R L And a parallel capacitor C 2 Between them; parallel capacitor C 1 Comprises MOS tube S 1 A parasitic output capacitor and a drain-source external parallel capacitor, a parallel capacitor C 2 Comprises MOS tube S 2 A parasitic output capacitance of the capacitor (B) and a parallel capacitance externally connected with the drain and the source.
The invention provides a design method of a cascade resonance driving structure of an E-type inverter, which comprises the following design steps:
step 2, designing an output impedance matching network of the second-stage class E inverter, wherein the matching network loads R with the impedance of 50 omega L Matching to Z DS2 ；
Step 3: MOS tube S for measuring second-stage E-type inverter 2 Input impedance Z of (2) in ；
Step 4: calculating to enable MOS tube S of second-stage E-type inverter 2 The driving power required by saturated conduction is the driving voltage of the second-stage class E inverter is sinusoidal voltage for the cascade resonance driving structure provided by the invention; assume MOS tube S 2 Sinusoidal voltage V at saturated conduction Cg Is of amplitude V m And only the input resistor r is arranged in the driving circuit g The output power of the first stage class E inverter should be designed as:
wherein C is g And r g The input capacitor and the input resistor are respectively the drain-source electrode input capacitor and the input resistor of the MOS transistor of the second-stage class E inverter; angular frequency ω=2pi f, f being the switching frequency;
step 5: the output power of the first-stage class E inverter is known as P Driver The direct current input voltage source is V CC1 The working frequency is f; finding the optimal parallel capacitance C of the first-stage class E inverter 1 And drain-source impedance Z DS1 MOS tube S for first-stage E-type inverter 1 Realizing a soft switch;
step 6: designing the input impedance matching network of the first-stage class E inverter to enable Z in Matching to Z DS1 。
As a further improvement of the invention, the parameters of the optimal parallel capacitance and drain-source impedance in the step 1 and the step 5 should be finely tuned according to the vicinity of the circuit parameters of the basic class E inverter structure until soft switching is realized; the circuit parameters based on the basic structure of the class E inverter are determined according to the following formula:
assume that the output power of the class E inverter is P O The DC input voltage is V CC The working frequency of the whole circuit is f; calculating parameters of the class E inverter under ideal switching conditions:
ω＝2πf
Z DS ＝R 0 +j1.1525R 0
wherein ω is angular frequency; r is R 0 Z is the load under the basic structure of the class E inverter DS Is drain-source impedance under the basic structure of the class E inverter, C 1 The parallel capacitor is a parallel capacitor under the basic structure of the class E inverter;
as a further improvement of the present invention, the method for measuring the input impedance of the class E inverter in the step 3 is as follows:
MOS tube S for E-type inverter through input impedance matching network 2 Is injected with radio frequency power, the gate voltage vg and the gate current ig are measured, and v is analyzed respectively g And i g The amplitude and phase of the fundamental component of (2) are respectively denoted as V g And I g Input impedance Z in ＝V g /I g 。
The working principle of the circuit of the invention is as follows:
the class E inverter realizes the soft switching of the MOS tube through the action of the MOS tube and the resonance of the element, and converts direct-current input power into alternating-current output power, and the frequency of the output voltage is consistent with the switching frequency; the first-stage class E inverter can provide driving voltage for the second-stage class E inverter when in operation; the driving power of the second-stage class-E inverter can be flexibly adjusted by adjusting the parameters of the first-stage class-E inverter, so that the driving voltage is improved.
The beneficial effects are that:
the invention provides a cascade resonance driving structure for a high-power output class-E inverter, wherein a first-stage class-E inverter MOS tube and a second-stage class-E inverter MOS tube can realize soft switching, and the first-stage class-E inverter can output specific alternating current power and inject the specific alternating current power into the second-stage class-E inverter MOS tube S 2 Reliably drive MOS tube S 2 The second-stage class E inverter can work normally, and high-power radio frequency output is realized.
Drawings
Fig. 1 is a schematic diagram of a cascade resonance driving structure of an E-type inverter according to the present invention;
fig. 2 is a schematic diagram of a design method of a cascade resonance driving structure of an E-type inverter according to the present invention;
FIG. 3 is a schematic diagram of measuring input impedance of a class E inverter according to the present invention;
FIG. 4 is a schematic diagram of an impedance matching network design in a class E inverter cascade resonant drive configuration;
FIG. 5 is a schematic diagram of a cascade resonant drive configuration for an n-stage class E inverter;
FIG. 6 is a basic structure of a class E inverter under ideal switching conditions in the prior art;
fig. 7 is an equivalent circuit of a class E inverter under ideal switching conditions in the prior art.
Detailed Description
The invention is described in further detail below with reference to the attached drawings and detailed description:
the invention provides a cascade resonance driving structure of an E-type inverter for high-power output, which comprises a first-stage E-type inverter and a second-stage E-type inverter, wherein the output of the first-stage E-type inverter is connected with the drain and source of a MOS (metal oxide semiconductor) tube of the second-stage E-type inverter. The first-stage class E inverter completes load matching and realizes driving through the input impedance matching circuit, and the second-stage class E inverter completes load matching and realizes radio frequency output through the output impedance matching circuit. In order to optimize the performance of the circuit structure, a design method of a cascade resonance driving structure of an E-type inverter is provided, so that the circuit can stably operate, and the efficiency of the circuit is improved.
As shown in fig. 6, the basic structure of the class E inverter under ideal switching conditions in the prior art comprises a dc input voltage source V CC Radio frequency choke RFC, MOS tube S, parallel capacitor C 1 Series resonance L 0 C 0 Series reactor jX and load R 0 The operating frequency of the circuit is ω=2pi f. The inductance of the rf choke is large and the dc input voltage source can be seen as outputting dc current through RFC. Series resonance L 0 C 0 Quality factor Q of (2) L ＝ωL 0 /R＝1/ωC 0 R is large enough that the current i on the load R Can be regarded as a standard sinusoidal current. Under ideal switching conditions, the design output power is P O If the following conditions are satisfied:
ω＝2πf (1)
Z DS ＝R 0 +j1.1525R 0 (3)
when the MOS tube is turned off, the current I 0 And i R To capacitor C 1 And the charging and discharging are carried out, so that the drain-source voltage is reduced to 0 when the MOS tube is opened, and soft switching is realized, so that the E-type inverter has high efficiency.
In practical use, as shown in FIG. 7, the load Z L Often with R 0 Are not equal, and therefore it is necessary to design the impedance network such that Z L Matching to Z DS . In addition, in practical application, due to the influence of on-resistance and parasitic capacitance of the MOS transistor, the parameters under ideal switching conditions often cannot realize soft switching, and needs toThe circuit element parameters are optimized.
In high-power radio frequency output application, the input capacitance of the MOS tube is generally large, and the driving is difficult to realize by a conventional square wave. The invention provides a cascade resonance driving structure of an E-class inverter, as shown in figure 1, wherein the output of a first-stage E-class inverter is connected with the gate source of a MOS tube of a second-stage E-class inverter, and the output is the MOS tube S 2 Providing a sinusoidal drive voltage. MOS tube S of second-stage E-type inverter 2 Input impedance Z of (2) in Is the load of the first stage class E inverter. In order to realize soft switching of the first-stage class E inverter and drive the MOS tube S 2 The input impedance Z needs to be accurately measured in Thus, the impedance matching circuit can be accurately designed.
The design steps of the cascaded resonant driving circuit of the class E inverter are shown in fig. 2, and the second class E inverter is designed first and then the first class E inverter is designed. The design steps are set forth in detail below:
step 2, designing an output impedance matching network of the second-stage class E inverter, wherein the matching network loads R with the impedance of 50 omega L Matching to Z DS2 ；
Step 3: MOS tube S for measuring second-stage E-type inverter 2 Input impedance Z of (2) in ；
Step 4: calculating to enable MOS tube S of second-stage E-type inverter 2 The driving power required by saturated conduction is the driving voltage of the second-stage class E inverter is sinusoidal voltage for the cascade resonance driving structure provided by the invention; assume MOS tube S 2 Sinusoidal voltage V at saturated conduction Cg Is of amplitude V m And only the input resistor r is arranged in the driving circuit g The output power of the first stage class E inverter should be designed as:
wherein C is g And r g The input capacitor and the input resistor are respectively the drain-source electrode input capacitor and the input resistor of the MOS transistor of the second-stage class E inverter; angular frequency ω=2pi f, f being the switching frequency;
step 5: the output power of the first-stage class E inverter is known as P Driver The direct current input voltage source is V CC1 The working frequency is f; finding the optimal parallel capacitance C of the first-stage class E inverter 1 And drain-source impedance Z DS1 MOS tube S for first-stage E-type inverter 1 Realizing a soft switch;
step 6: designing the input impedance matching network of the first-stage class E inverter to enable Z in Matching to Z DS1 。
The optimal parallel capacitor and drain-source impedance parameters in the step 1 and the step 5 should be finely adjusted according to the vicinity of the circuit parameters of the basic E-type inverter structure until soft switching is realized;
the principle of measuring the input impedance of the class E inverter is shown in FIG. 3, and the input impedance matching network is used for leading the input impedance to the MOS tube S of the class E inverter 2 Is injected with radio frequency power, the gate voltage vg and the gate current ig are measured, and v is analyzed respectively g And i g The amplitude and phase of the fundamental component of (2) are respectively denoted as V g And I g Input impedance Z in ＝V g /I g 。
The impedance matching network is generally a method of performing impedance transformation using a structure in which elements such as an inductor, a capacitor, and a transformer are connected in series and parallel. There are numerous passive networks that can achieve the impedance matching effect of the present invention, and the design of the impedance matching network will now be described by way of example with reference to fig. 4. The input impedance matching network in FIG. 4 causes an input impedance Z in Matching to Z DS1 Capacitance C 3 ，C 4 And inductance L 1 ，L 2 The following should be satisfied:
output impedance matching network matches load R to Z DS2 Capacitance C 5 、C 6 And inductance L 3 The following should be satisfied:
by the design method of the embodiment of the cascade resonance driving structure of the two-stage E-type inverter, the third-stage E-type inverter and the n-th-stage E-type inverter can be continuously designed according to the actual situation, and the cascade resonance driving is realized by adopting the cascade scheme of the n-stage E-type inverter as shown in fig. 5.
The above description is only of the preferred embodiment of the present invention, and is not intended to limit the present invention in any other way, but is intended to cover any modifications or equivalent variations according to the technical spirit of the present invention, which fall within the scope of the present invention as defined by the appended claims.
Claims (2)
- The design method of the E-class inverter cascade resonance driving structure comprises a first-stage E-class inverter and a second-stage E-class inverter:the first stage E-type inverter comprises a direct current input voltage source V CC1 Radio frequency choke RFC1 and MOS tube S 1 Drive circuit, parallel capacitor C 1 And an input impedance matching circuit;the second-stage class E inverter comprises a direct-current input voltage source V CC2 Radio frequency choke RFC2, MOS tube S 2 Parallel capacitor C 2 Output impedance matching circuit and load R L ；DC input voltage source V CC1 Through the RF choke RFC1 and the MOS tube S 1 Is connected with the drain electrode of the transistor; drive circuit with duty ratio of 0.5 and MOS tube S 1 Is connected with the grid electrode of the MOS tube S 1 Switching on and off at corresponding switching frequencies; parallel capacitor C 1 And MOS tube S 1 The drain and the source are connected; the input impedance matching network is connected with the MOS tube S of the second-stage E-type inverter 2 Gate-source and parallel capacitance C of (C) 1 Between them; DC input voltage source V CC2 Through RF choke RFC2 and MOS tube S 2 Is connected with the drain electrode of the transistor; parallel capacitor C 2 And MOS tube S 2 The drain and the source are connected; the output impedance matching network is connected with the load R L And a parallel capacitor C 2 Between them; parallel capacitor C 1 Comprises MOS tube S 1 A parasitic output capacitor and a drain-source external parallel capacitor, a parallel capacitor C 2 Comprises MOS tube S 2 A parasitic output capacitance of (a) and a parallel capacitance externally connected with a drain and a source:the design method of the circuit structure is as follows, and is characterized in that:step 1, knowing the output power of the second stage class E inverter as P O The direct current input voltage source is V CC2 The working frequency is f; finding the optimal parallel capacitance C of the second-stage class E inverter 2 And drain-source impedance Z DS2 MOS tube S for making second-stage E-type inverter 2 Realizing a soft switch;step 2, designing an output impedance matching network of the second-stage class E inverter, wherein the matching network loads R with the impedance of 50 omega L Matching to Z DS2 ；Step 3: MOS tube S for measuring second-stage E-type inverter 2 Input impedance Z of (2) in ；Step 4: calculating to enable MOS tube S of second-stage E-type inverter 2 The driving power required by saturated conduction is that for the cascade resonant driving structure, the driving voltage of the second-stage E-type inverter is sinusoidal; MOS tube S 2 Sinusoidal voltage V at saturated conduction Cg Is of amplitude V m And only the input resistor r is arranged in the driving circuit g The output power of the first stage class E inverter should be designed as:
wherein C is g And r g The input capacitor and the input resistor are respectively the drain-source electrode input capacitor and the input resistor of the MOS transistor of the second-stage class E inverter; angular frequency ω=2pi f, f being the switching frequency;step 5:the output power of the first-stage class E inverter is known as P Driver The direct current input voltage source is V CC1 The working frequency is f; finding the optimal parallel capacitance C of the first-stage class E inverter 1 And drain-source impedance Z DS1 MOS tube S for first-stage E-type inverter 1 Realizing a soft switch;step 6: designing the input impedance matching network of the first-stage class E inverter to enable Z in Matching to Z DS1 。 - 2. The method for designing a cascade resonance driving structure of a class E inverter according to claim 1, wherein:the method for measuring the input impedance of the class-E inverter in the step 3 is as follows:MOS tube S for E-type inverter through input impedance matching network 2 Is injected with radio frequency power, the gate voltage vg and the gate current ig are measured, and v is analyzed respectively g And i g The amplitude and phase of the fundamental component of (2) are respectively denoted as V g And I g Input impedance Z in ＝V g /I g 。
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| CN115589134A (en) | 2023-01-10 |
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