CN109860366A - Flip LED chips - Google Patents
Flip LED chips Download PDFInfo
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- CN109860366A CN109860366A CN201811627021.0A CN201811627021A CN109860366A CN 109860366 A CN109860366 A CN 109860366A CN 201811627021 A CN201811627021 A CN 201811627021A CN 109860366 A CN109860366 A CN 109860366A
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Abstract
The invention discloses a kind of flip LED chips, comprising: flip LED chips ontology；And it is arranged at intervals on the odd number strip through-hole on the flip LED chips ontology front；Wherein, a strip through-hole in odd number strip through-hole is center strip through-hole, its central axes for passing through the flip LED chips ontology, the central strip through-hole includes the first plug through-hole, outer expanding structure and through the outer expanding structure and the strip groove portion that connect with the first plug through-hole, the first plug through-hole is used to form N electrode structure, and the outer expanding structure includes thimble region.The present invention solves the problems, such as that electric leakage failure occur in flip LED chips caused by puncturing the insulating protective layer on the flip LED chips central strip through-hole due to thimble.
Description
Technical field
The present invention relates to LED chip manufacturing technology fields, more particularly to a kind of flip LED chips.
Background technique
Light emitting diode (Light Emitting Diode, LED) is a kind of semiconductor solid-state luminescent device, utilizes half
Conductor PN junction electroluminescent principle is made.LED component is low, small in size with cut-in voltage, response is fast, stability is good, the service life is long,
The good photoelectric properties such as pollution-free, therefore have more and more extensively in fields such as outdoor room lighting, backlight, display, traffic instructions
General application.
In general LED chip is divided into horizontal structure (positive cartridge chip) and inverted structure (flip-chip) two types；It is right
In chip, in use, thimble can withstand on center region (thimble region, and its centered on chip, the radius of chip
≤ 50 microns of range), for positive cartridge chip, thimble is the back side for withstanding on positive cartridge chip, since the back side of positive cartridge chip is lining
Bottom surface, therefore thimble will not stab positive cartridge chip, positive cartridge chip can not fail.
For flip-chip, thimble can withstand on the front of flip-chip, since the front of flip-chip is with work knot
The one side of structure, thimble can stab the work structuring surface of flip-chip, so that flip-chip fails.
For being equipped with the flip-chip of even number strip through-hole (N-type or P-type electrode), since strip through-hole avoids thimble
The center region being located at, i.e. thimble can be withstood between two adjacent strip through-holes, thus without appearance since thimble can pierce
The broken protective layer at the Mesa table top of the positive strip through-hole of flip-chip, so that the problem of the chip failure.
However, for the flip-chip for being equipped with odd number strip through-hole, one of strip through-hole can pass through thimble position
In center region, i.e. thimble can withstand on the strip through-hole structure, thus will appear since thimble can be punctured positioned at upside-down mounting
Protective layer at the Mesa table top of the strip through-hole of chip front side, so that the problem of flip-chip electric leakage failure.
Summary of the invention
The purpose of the present invention is to provide a kind of flip LED chips, will be located on the strip through-hole of chip intermediate region
It is equipped with the outer expanding structure that diameter is greater than the diameter in thimble region by the part in thimble region, so that on the outer expanding structure
Mesa table top is in except thimble region, and thimble is avoided to stab the insulating protective layer at Mesa table top, avoids upside-down mounting to realize
The purpose of LED chip electric leakage failure.
In order to achieve the goal above, the invention is realized by the following technical scheme:
A kind of flip LED chips, comprising: flip LED chips ontology；And it is arranged at intervals on the flip LED chips sheet
Odd number strip through-hole on body front；Wherein, a strip through-hole in odd number strip through-hole is center strip through-hole,
By the central axes of the flip LED chips ontology, the central strip through-hole include the first plug through-hole, outer expanding structure and
Through the outer expanding structure and the strip groove portion that connect with the first plug through-hole, the first plug through-hole is used for shape
At N electrode structure, the outer expanding structure includes thimble region.
Further, the thimble region is that thimble of the flip LED chips used in packaging process pierces
Region.
Further, the outer expanding structure is round or oval, or is one of round, ellipse and other
The combined shaped of shape.
Further, when the outer expanding structure is round, diameter range is 100 μm~200 μm.
Further, the depth bounds of the outer expanding structure are 0.1 μm~10 μm.
Further, the flip LED chips ontology includes: substrate；Be sequentially formed in N-GaN layer on the substrate,
Multiple quantum well layer and P-GaN layers；And it is sequentially formed in transparency conducting layer on the P-GaN layer, reflecting layer, metal coating
Layer and insulating protective layer；Wherein, the odd number strip through-hole is formed in the insulating protective layer.
Further, flip LED chips ontology front includes the firstth area, the secondth area and insulation layer, the insulation layer
Between firstth area and the secondth area, to be dielectrically separated from firstth area and the secondth area.
The strip groove portion is located in firstth area, and the outer expanding structure is located in the insulation layer, and described
One plug through-hole is located in secondth area.
In addition to each strip through-hole of the central strip through-hole includes a strip groove section and the first plug through hole section, institute
It states strip groove section and is connected to the first plug through hole section, strip groove intersegmental part surface and the first plug through hole section
Sidewall surfaces be covered with the insulating protective layer；The strip groove section is located in firstth area and insulation layer, and described
One plug through hole section is located in secondth area.
Further, further includes: be arranged at intervals in firstth area and between the adjacent strip through-hole
Second plug through-hole is formed with the insulating protective layer in the sidewall surfaces of the second plug through-hole；
Several third plug through-holes being arranged at intervals in secondth area, the side wall of each third plug through-hole
The insulating protective layer is formed on surface.
The P electrode structure sheaf being formed on firstth area surface, it is logical that the P electrode structure sheaf fills second plug
Hole forms P electrode structure, and it is electrically connected with the coat of metal.
The N electrode structure sheaf being formed on secondth area surface, it is logical that the N electrode structure sheaf fills the central strip
The the first plug through hole section and third plug of the first plug through-hole in hole and other strip through-holes in addition to central strip through-hole
Through-hole forms N electrode structure, is electrically connected with the N electrode layer.
Further, the insulating protective layer is the single layer structure of one of SiO2, SiNx, SiO2, SiNx composition, or
Person, the insulating protective layer are several alternate groups in SiO2, SiNx, SiO2, SiNx into laminated construction.
Further, the coat of metal is the single layer knot of one of Cr, Au, Pt, Ni, Ti, TiW alloy composition
Structure, alternatively, the coat of metal is several alternate groups in Cr, Au, Pt, Ni, Ti, TiW alloy into laminated construction；It is described
The material of bright conductive layer is ITO or ZnO；The material in the reflecting layer is Ag or Al.
The present invention has following technical effect that
The structure that extends out of central strip through-hole of the invention includes thimble region, i.e. the diameter < central strip in thimble region
The Mesa table top (the 2nd Mesa table top) of the diameter of outer expanding structure on through-hole, the outer expanding structure is located at thimble region
Outside, so that thimble thorn is protected less than the insulation on the Mesa table top of the outer expanding structure when using the flip LED chips
Sheath solves upside-down mounting caused by the insulating protective layer punctured on the flip LED chip center strip through-hole due to thimble
There is the problem of electric leakage failure in LED chip.And the flip LED chips in the present embodiment are equipped with odd number strip through-hole and can make down
It fills LED chip current distribution more evenly, improves light extraction efficiency.
Detailed description of the invention
Fig. 1 is a kind of top view for flip LED chips that one embodiment of the invention provides；
Fig. 2 is a kind of flow chart of the forming method for flip LED chips that one embodiment of the invention provides；
Fig. 3 a~Fig. 3 f is respectively the schematic diagram of the section structure of the chip in forming method shown in Fig. 2 along the direction A-A.
Specific embodiment
A specific embodiment of the invention is described in more detail below in conjunction with schematic diagram.According to following description and
Claims, advantages and features of the invention will become apparent from.It should be noted that attached drawing is all made of very simplified form and
Using non-accurate ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
As shown in Figure 1, a kind of flip LED chips provided in this embodiment, comprising: flip LED chips ontology, interval setting
Odd number strip through-hole (CT) on the flip LED chips ontology positive (work structuring surface), wherein in odd number
One strip through-hole is located on the center line of the flip LED chips ontology, and in the flip LED chips ontology
The heart, therefore, define the strip through-hole be center strip through-hole 800, the central strip through-hole 800 include: outer expanding structure 801,
First plug through-hole 803 and through the strip groove portion that the outer expanding structure 801 is connect with the first plug through-hole 803
802, as an example, the plan view shape in the strip groove portion 802 be rectangle, the outer expanding structure 801 by rectangle middle part
Expand outward and formed, when the outer expanding structure 801 is rounded, is arranged with the flip LED chips ontology with central axes.Institute
Outer expanding structure 801 is stated with Mesa table top, on the Mesa table top and 801 inner surface of outer expanding structure and strip it is recessed
Insulating protective layer is covered in the sidewall surfaces of the inner surface of groove portion 802 and the first plug through-hole 803.Insulation is covered with to protect
The range of the diameter D3 of the circular outer expanding structure 801 of sheath is 100 μm~200 μm, the outer expanding structure 801
Depth bounds be 0.1 μm~10 μm, the diameter D3 of the outer expanding structure 801 is greater than the diameter in thimble region, i.e., described outer
Expanding structure 801 includes thimble region, so that the Mesa table top of outer expanding structure 801 is in except thimble region, thimble is pierced not
To the Mesa table top, that is, avoids thimble and stab insulating protective layer at Mesa table top, avoid flip LED chips to realize
The purpose of electric leakage failure.
The thimble is the thimble for being used to encapsulate the bonder of chip, that is, is exactly to exist for encapsulating the user of such chip
When using such chip, for being equipped with thimble below the board of the bonder in packaging process, it is equipped with and inhales above board
Mouth, the chip for needing to encapsulate need to be placed on board, and by the center of the upward plunger tip piece of thimble, then suction nozzle moves down suction
The attached chip, is transferred on the substrate for being used to support the chip, starts to be packaged the chip on the substrate later
Process, but should not as limit, such as: the thimble can also be the thimble in other subsequent production processes or test step.
In the present embodiment, the outer expanding structure 801 is rounded, but should not be as limit, such as the outer reaming knot
Structure is ellipse, or the combined shaped for one of round, ellipse with other shapes, as long as the outer expanding structure packet
The thimble region is contained, so that the thimble in subsequent handling is pierced less than the insulating protective layer on the outer expanding structure.
In the present embodiment, flip LED chips ontology front is divided into the first area 10, the second area 12 and insulation
Area 11, the insulation layer 11 is between firstth area 10 and the second area 12, for being dielectrically separated from firstth area 10 and
Two areas 12.The strip groove portion 802 is located in firstth area 10, and the outer expanding structure 801 is located at the insulation layer 11
Interior, the first plug through-hole 803 is located in secondth area 12.In addition to other strip through-hole knots of the central strip through-hole
Structure is identical, and each strip through-hole includes a strip groove section and the first plug through hole section, and the strip groove section is connected to institute
The first plug through hole section is stated, strip groove intersegmental part surface is covered with the insulating protective layer, the first plug through-hole
The sidewall surfaces of section are covered with the insulating protective layer, and the strip groove section is located in firstth area and insulation layer, described
First plug through hole section is located in secondth area.
The flip LED chips front further includes being arranged at intervals in firstth area 10 and being located at the adjacent strip
The second plug through-hole 900 between through-hole is formed with the insulation protection in the sidewall surfaces of the second plug through-hole 900
Layer；Several third plug through-holes 804 being arranged at intervals in secondth area 12, each third plug through-hole 804
The insulating protective layer is formed in sidewall surfaces.P electrode structure sheaf, the P electrode knot are covered on firstth area surface
Structure layer fills the formation P electrode structure of the second plug through-hole 900 and the coat of metal of the flip LED chips ontology is electrically connected
It connects；N electrode structure sheaf is covered on secondth area surface, the N electrode structure sheaf fills the central strip through-hole 800
The first plug through-hole 803 and other strip through-holes in addition to central strip through-hole the first plug through hole section and third plug
Through-hole 804 forms N electrode structure and is electrically connected with the N electrode layer of the flip LED chips ontology.
Odd number strip through-hole can make flip LED chips current distribution more evenly, improve light extraction efficiency.
In the present embodiment, the flip LED chips ontology includes: substrate, the N-GaN being sequentially formed on the substrate
Layer, multiple quantum well layer and P-GaN layers；Transparency conducting layer, reflecting layer and the metal coating being sequentially formed on the P-GaN layer
Layer；The insulating protective layer being covered on P-GaN layers described, coat of metal, N-GaN layers and N electrode layer.The odd number
Strip through-hole is formed in the insulating protective layer.The material of the insulating protective layer is in SiO2, SiNx, SiO2, SiNx
A kind of single layer structure of composition, alternatively, being several alternate groups in SiO2, SiNx, SiO2, SiNx into laminated construction.
Based on the above embodiment, the present invention also provides a kind of forming methods of above-mentioned flip LED chips, as shown in Fig. 2, this
A kind of forming method for flip LED chips that embodiment provides, comprising:
Step S1, substrate is provided, sequentially forms N-GaN layers, multiple quantum well layer and P-GaN layers over the substrate.
Step S2, exposed portion N-GaN layers of the first opening is formed in described P-GaN layers and multiple quantum well layer.
Step S3, transparency conducting layer is formed on P-GaN layers described, to transparent at the top of first opening sidewalls
Conductive layer carve, and forms the second opening.
Step S4, reflecting layer and coat of metal are successively formed on the transparency conducting layer, second opening runs through
The reflecting layer and coat of metal.
Step S5, N electrode layer is formed on the N-GaN layer in first opening.
Step S6, in the N electrode layer surface, the inner surface of the second opening, metal coating layer surface and the first opening
Insulating protective layer is formed on surface, forms the as outer reaming after the insulating protective layer on the inner surface of second opening
Structure.Diameter < second opening diameter of the outer expanding structure of the diameter < of first opening described in the diameter < in thimble region.
The part by thimble region in the strip N electrode structure for being located at chip intermediate region is equipped with diameter and is greater than top
The outer expanding structure of needle regional diameter avoids pushing up so that the Mesa table top in the strip N electrode structure is in except thimble region
Needle stabs the insulating protective layer at Mesa table top, to avoid flip LED chips electric leakage failure.
It is institute in the manufacturing process of flip LED chips provided in an embodiment of the present invention referring specifically to attached drawing 3a~Fig. 3 f
State the schematic diagram of the section structure of the outer expanding structure along A-A direction shown in Fig. 1 of central strip through-hole.
As shown in Figure 3a, substrate 100 is provided；In the present embodiment, the material of the substrate 100 is sapphire
(Al2O3).But the present invention does not limit the material of the substrate 100, material is also possible to such as spinelle
(MgAl2O4), other substrates such as SiC, ZnS, ZnO or GaAs.
After this, N-GaN layer 200, multiple quantum well layer 210 (MQW), P-GaN are sequentially formed on the substrate 100
Layer 220.
The N-GaN layer 200, multiple quantum well layer 210 (MQW), P-GaN layer 220 are the necessary knot of flip LED chip
Structure, therefore the present invention, to N-GaN layer 200, the function of multiple quantum well layer 210 (MQW), P-GaN layer 220 does not repeat.
Specifically, the N-GaN layer 200 in the present embodiment, multiple quantum well layer 210 (MQW), P-GaN layer 220 can be with
It is sequentially formed on the substrate 100 by epitaxy technique, and N-GaN layer 200, multiple quantum well layer 210 (MQW), P-GaN
Layer 220 may be single layer or multilayered structure.
For example, the P-GaN layer 220 can be by be sequentially formed on multiple quantum well layer 210 the In-GaN for mixing Mg,
It mixes the P-GaN of Mg and mixes the Al-GaN composition of Mg, the multiple quantum well layer 210 can be by InGaN layer and GaN layer alternating
The quantum well structure constituted is stacked, the N-GaN layer 200 can be to be made of the GaN layer for mixing Si.
It should be understood that the N-GaN layer 200, multiple quantum well layer 210 (MQW), the material of P-GaN layer 220
It is only an example with structure, the present invention is not limited in any way this.
As shown in Figure 3b, multiple exposed portion N-GaN layers are formed in the P-GaN layer 220 and multiple quantum well layer 210
200 the first opening 230, and then form the first Mesa table top of flip LED chips；And at least one described first opening
230 are located at the center of the substrate 100, are arranged with the substrate 100 with center line, and the diameter of first opening 230 is
D1.The first Mesa table top exposes N-GaN layer 200 and exists to be subsequently formed the N electrode layer being electrically connected with N-GaN layer 200
In the present embodiment, 220 material of part P-GaN layer and 210 material of multiple quantum well layer can be removed by the way of plasma etching,
To form first opening 230.The anisotropy of this etching mode is stronger, and the first 230 edges of opening of formation are more whole
Together, thus first opening 230 size be more easier to control.Specifically can using boron trichloride gas and chlorine as etc. from
Sub- etching gas, carrier gas of the argon gas as etching gas.In the present embodiment, first opening 230 is in long strip.
It should be understood that being of the invention using etching gas used by dry etching and dry etching
One example, the present invention are not construed as limiting to how to form first opening 230, other etching modes such as wet etching is equivalent
Sample can be used for being formed first opening 230.
As shown in Figure 3c, transparency conducting layer 300 is formed on the P-GaN layer 220, to close to first opening 230
The transparency conducting layer 300 of top side wall carve, and forms the second opening 310, and the diameter of second opening 310 is D2, and
D2 > D1.Second opening 310 is in circular hole.
In the present embodiment, can form the transparency conducting layer 300 of tin indium oxide (ITO) material, this material it is transparent
The light transmittance with higher of conductive layer 300, that is to say, that transmitance is relatively high in its visible light wave range, therefore can substantially not
The light that Quantum Well issues is kept off, the loss of light is reduced.
In addition, the transparency conducting layer 300 of the indium tin oxide material generally has relatively small resistance sizes, Jin Erbang
When flip LED chips being helped to work, the electric current in the P electrode layer on the transparency conducting layer 300 is subsequently formed in transparency conducting layer
It spreads apart and on 300, be conducive to achieve the purpose that current expansion in this way, and then prevent the generation of electric current congestion phenomenon, incrementss
Sub- efficiency, this is further conducive to the working performance for promoting flip LED chips.The transparency conducting layer 300 is between the P-GaN
Between layer 220 and the reflecting layer being subsequently formed, it can be used for being electrically connected the P-GaN layer 220 and reflecting layer.
But whether the present invention to necessarily being formed the transparency conducting layer 300 of indium tin oxide material and being not construed as limiting, in the present invention
Other embodiments in, other transparent and conductive materials, such as zinc oxide and/or tin indium oxide can also be used.
In the present embodiment, the transparency conducting layer 300, the party can be formed using magnetron sputtering deposition (Sputter)
Formula is easier to control the transparency conducting layer 300 of formation.But the present invention is not construed as limiting its generation type, other shapes
Its other party such as (Reactive Plasma Deposition, RPD) and electron beam evaporation plating is deposited at technique such as reaction and plasma
Formula can be equally used for forming the transparency conducting layer 300.
The step of forming second opening 310 includes being initially formed the covering P-GaN layer 220 and N- GaN layer 200
Transparency conducting layer 300, later, by exposure development define it is described second opening 310 position, be exposure mask to institute using photoresist
It states transparency conducting layer 300 to perform etching, removal is located at first 230 top side walls of opening and is located at first opening 230
Transparency conducting layer 300 on the N-GaN layer of bottom is to form second opening 310.
It should be understood that be an example of the invention using carving method is returned, how the present invention is to forming institute
It states the second opening 310 to be not construed as limiting, other etching modes such as wet etching etc. can be equally used for forming second opening
310。
As shown in Figure 3d, reflecting layer 400 and coat of metal 500 are successively formed on the transparency conducting layer.
The reflecting layer 400 and coat of metal 500 cover the transparency conducting layer 300, exposed part P-GaN layers
220 and N-GaN layer 200 passes through negative-working photoresist-electron beam evaporation plating (or magnetron sputtering deposition or other physical vapour deposition (PVD)s
Mode)-removing (LIFT_OFF) technique, the reflecting layer 400 and coat of metal 500 are formed, and then form flip LED
2nd Mesa table top of chip, i.e., described second opening 310 run through the reflecting layer 400 and coat of metal 500.Described second
Mesa table top exposes P-GaN layer 220, and the 2nd Mesa table top is the outer reaming for being as subsequently formed central strip N electrode
The Mesa table top of structure.
The reflecting layer 400 is the P electrode layer of single layer or laminated construction, can be used for receiving and reflecting the multiple quantum wells
The light that layer 210 is issued towards P electrode layer direction.In the present embodiment, the P electrode layer for forming laminated construction transparent is led described
Silver-colored (Ag) layer and titanium-tungsten (TiW alloy) layer or aluminium (Al) layer are sequentially formed in electric layer 300, the silver layer and titanium tungsten are closed
Golden (TiW alloy) layer collectively forms the P electrode layer of the laminated construction.The coat of metal 500 is chromium (Cr), golden (Au),
The single layer structure of one of platinum (Pt), nickel (Ni), titanium (Ti), TiW alloy composition, alternatively, being Cr, Au, Pt, Ni, Ti, TiW
Several alternate groups in alloy are at laminated construction.The coat of metal 500 can be used for protecting the reflecting layer 400.
Coat of metal (conductive protecting layer) 500 is formed on the reflecting layer 400.The coat of metal 500 is used for
The reflecting layer 400 of formation is protected, is conducive to the influence for making P electrode be not readily susceptible to subsequent process steps in this way, in turn
Guarantee the smooth and smooth of reflecting layer 400, and then is conducive to make the light reflectivity of P electrode not to be affected as far as possible.
Specifically, the coat of metal 500 in the present embodiment is formed on the reflecting layer 400.
In the present embodiment, the coat of metal 500 is that laminated construction specifically can sequentially form layers of chrome, platinum
Layer, titanium layer, layer gold and nickel layer are to constitute the coat of metal 500, wherein platinum layer and titanium layer chemical property are more stable, main
Play the role of protecting reflecting layer 400；Layers of chrome primarily serves adhesive attraction, that is to say, that for increasing reflecting layer 400 and gold
Belong to the adhesiveness between protective layer 500；Layer gold and nickel layer play the role of protecting other materials layer in coat of metal 500.
In the present embodiment, when forming the coat of metal 500 of laminated construction, nickel layer can be eventually formed, that is,
It says, in the coat of metal 500 of entire laminated construction, nickel layer is located at most surface layer.It is such to be advantageous in that, the material properties of nickel
It is relatively stable, it is not easy to be corroded, the surface layer using nickel as the coat of metal 500 of laminated construction is conducive to make metal coating
Layer 500 is not easy to be affected in other subsequent steps.But whether the present invention is necessary for more to the coat of metal 500
Layer structure is not construed as limiting.
In addition, in the present embodiment, it can be using electron beam evaporation plating, magnetron sputtering deposition or other physical vapour deposition (PVD)s
Mode form the coat of metal 500.But the present invention is not construed as limiting to how to form the coat of metal 500.
As shown in Figure 3 e, N electrode layer 700 is formed on the N-GaN layer 200 in first opening 230.
N electrode layer 700 in the present embodiment can be single layer identical with above-mentioned reflecting layer 400 or laminated construction,
And the material of the N electrode layer 700 can be aluminium, and the work function between this material and N-GaN layer 200 is smaller, no
It is easy to cause gesture between N electrode layer 700, N-GaN layer 200 because work function difference is larger between N electrode layer 700, N-GaN layer 200
The operating voltage for building the flip LED chips that height increases and then results in increases.
But the material of the N electrode layer 700 is also possible to material identical with above-mentioned reflecting layer 400, the present invention is to this
It is not construed as limiting.
In the present embodiment, the N electrode layer 700 should not contact the side wall of first opening 230, that is to say, that position
N electrode layer 700 and first in the first opening 230 are open between 230 side wall with spacing 701.It is such to be advantageous in that
The flip LED chips to be formed can be further prevented to leak electricity to a certain extent.Between the reflecting layer 400 and N electrode layer 700
It does not contact, it is short-circuit between reflecting layer 400 and N electrode layer 700 to prevent.
It should be noted that the step of forming reflecting layer 400 and N electrode layer 700 sequence is in no particular order, or can be same
The reflecting layer 400 and N electrode layer 700 are formed simultaneously in one step.
As shown in Figure 3 e, on 700 surface of N electrode layer, the inner surface of the second opening 310,500 surface of coat of metal
It is open on 230 inner surfaces with first and forms insulating protective layer 600, form the insulation on the inner surface of second opening 310
It is the outer expanding structure 801 shown in FIG. 1 after protective layer 600.In the N-GaN layer 200, N electrode layer 700, P-GaN layers
220, insulating protective layer (insulative reflective layer) 600 is covered on coat of metal 500, etches second opening, 310 upper areas
The insulating protective layer 600, with it is described second opening 310 in insulating protective layer 600 in formed depth be 0.1 μm~
10 μm of outer expanding structure 801.The diameter of the outer expanding structure 801 is D3, and the range of D3 is 100 μm~200 μm.
Wherein, the diameter < D1 < D3 < D2 in thimble region.The Mesa table top (second of the i.e. described outer expanding structure 801
Mesa table top) it is located at thimble region exterior, so that thimble is pierced less than the outer reaming knot when using the flip LED chips
Insulating protective layer 600 on the Mesa table top of structure 801 solves and leads to since thimble punctures the flip LED chips central strip
There is the problem of electric leakage failure in flip LED chips caused by protective layer on hole.And the flip LED chips in the present embodiment are set
There is odd number strip through-hole that can make flip LED chips current distribution more evenly, improves light extraction efficiency.
In the present embodiment, the insulating protective layer 600 can also be one of SiO2, SiNx, SiO2, SiNx composition
Single layer structure, alternatively, being several alternate groups in SiO2, SiNx, SiO2, SiNx into laminated construction.Insulating protective layer 600 can
It is formed by the way of reaction and plasma deposition.
After forming the insulating protective layer 600, it will be formed in the insulating protective layer 600 in subsequent step and institute
The P electrode structure of the electrical connection of P electrode layer 400 is stated, and the N electrode structure being electrically connected with N electrode layer 700 (is not shown in Fig. 3 f
Out).Therefore the insulating protective layer 600 plays the role of electric isolation P electrode structure and N electrode structure.In addition, by
It is located above the multiple quantum well layer 210 in the insulating protective layer 600, that is to say, that in flip LED chips work of the invention
When making, the multiple quantum well layer 210 will be by the insulating protective layer 600 towards the light that the direction far from the substrate 100 issues
Reflection, and then the external world is transmitted through from substrate 100.This is conducive to the light transmittance for increasing flip LED chips of the invention.
The above is only a preferred embodiment of the present invention, does not play the role of any restrictions to the present invention.Belonging to any
Those skilled in the art, in the range of not departing from technical solution of the present invention, to the invention discloses technical solution and
Technology contents make the variation such as any type of equivalent replacement or modification, belong to the content without departing from technical solution of the present invention, still
Within belonging to the scope of protection of the present invention.
Claims (10)
1. a kind of flip LED chips characterized by comprising
Flip LED chips ontology；And
The odd number strip through-hole being arranged at intervals on the flip LED chips ontology front；
Wherein, a strip through-hole in odd number strip through-hole is center strip through-hole, passes through the flip LED chips sheet
The central axes of body, the central strip through-hole include the first plug through-hole, outer expanding structure and run through the outer expanding structure simultaneously
The strip groove portion connecting with the first plug through-hole, the first plug through-hole is used to form N electrode structure, described to extend out
Pore structure includes thimble region.
2. flip LED chips as described in claim 1, which is characterized in that the thimble region is that the flip LED chips exist
The region that thimble used in packaging process pierces.
3. flip LED chips described in claim 1, which is characterized in that the outer expanding structure is round or oval, or
Combined shaped for one of round, ellipse with other shapes.
4. flip LED chips as claimed in claim 1 or 2, which is characterized in that straight when the outer expanding structure is round
Diameter range is 100 μm~200 μm.
5. flip LED chips as claimed in claim 4, which is characterized in that the depth bounds of the outer expanding structure are 0.1 μm
~10 μm.
6. flip LED chips as claimed in claim 5, which is characterized in that the flip LED chips ontology includes:
Substrate；
It is sequentially formed in N-GaN layer on the substrate, multiple quantum well layer and P-GaN layers；And
Transparency conducting layer, reflecting layer, coat of metal and the insulating protective layer being sequentially formed on the P-GaN layer；
Wherein, the odd number strip through-hole is formed in the insulating protective layer.
7. flip LED chips as claimed in claim 5, which is characterized in that flip LED chips ontology front includes first
Area, the secondth area and insulation layer, the insulation layer is between firstth area and the secondth area, to be dielectrically separated from firstth area
With the secondth area；
The strip groove portion is located in firstth area, and the outer expanding structure is located in the insulation layer, and described first inserts
Bolt throughhole is located in secondth area；
In addition to each strip through-hole of the central strip through-hole includes a strip groove section and the first plug through hole section, the item
Shape groove segment is connected to the first plug through hole section, the side on strip groove intersegmental part surface and the first plug through hole section
Wall surface is covered with the insulating protective layer；The strip groove section is located in firstth area and insulation layer, and described first inserts
Bolt throughhole section is located in secondth area.
8. flip LED chips as claimed in claim 6, which is characterized in that further include:
It is arranged at intervals on the second plug through-hole in firstth area and between the adjacent strip through-hole, described second
The insulating protective layer is formed in the sidewall surfaces of plug through-hole；
Several third plug through-holes being arranged at intervals in secondth area, the sidewall surfaces of each third plug through-hole
On be formed with the insulating protective layer；
The P electrode structure sheaf being formed on firstth area surface, the P electrode structure sheaf fill the second plug through-hole shape
At P electrode structure, and it is electrically connected with the coat of metal；
The N electrode structure sheaf being formed on secondth area surface, the N electrode structure sheaf fill the central strip through-hole
The the first plug through hole section and third plug through-hole of first plug through-hole and other strip through-holes in addition to central strip through-hole
N electrode structure is formed, is electrically connected with the N electrode layer.
9. flip LED chips as claimed in claim 7, which is characterized in that the insulating protective layer be SiO2, SiNx, SiO2,
The single layer structure of one of SiNx composition, alternatively, the insulating protective layer is several friendships in SiO2, SiNx, SiO2, SiNx
For composition laminated construction.
10. flip LED chips as claimed in claim 8, which is characterized in that the coat of metal be Cr, Au, Pt, Ni,
The single layer structure of one of Ti, TiW alloy composition, alternatively, the coat of metal is Cr, Au, Pt, Ni, Ti, TiW alloy
In several alternate groups at laminated construction；The material of the transparency conducting layer is ITO or ZnO；The material in the reflecting layer is
Ag or Al.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811627021.0A CN109860366A (en) | 2018-12-28 | 2018-12-28 | Flip LED chips |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811627021.0A CN109860366A (en) | 2018-12-28 | 2018-12-28 | Flip LED chips |
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| Publication Number | Publication Date |
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| CN109860366A true CN109860366A (en) | 2019-06-07 |
Family
ID=66893093
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811627021.0A Pending CN109860366A (en) | 2018-12-28 | 2018-12-28 | Flip LED chips |
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| CN113903836A (en) * | 2021-09-07 | 2022-01-07 | 厦门三安光电有限公司 | Flip-chip light emitting diode and light emitting device |
| CN115394895A (en) * | 2022-09-07 | 2022-11-25 | 厦门三安光电有限公司 | Flip-chip light emitting diode and lighting device |
| CN115513349A (en) * | 2022-09-02 | 2022-12-23 | 福建兆元光电有限公司 | A High Brightness LED Flip Chip Structure |
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