CN109856425B - Monolithic integrated triaxial acceleration sensor and manufacturing process thereof - Google Patents
Monolithic integrated triaxial acceleration sensor and manufacturing process thereof Download PDFInfo
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Abstract
The invention discloses a monolithic integrated triaxial acceleration sensor and a manufacturing process thereof, wherein a microelectronic machining technology method is adopted, 4 double-L-shaped beams, two mass blocks and a middle double-beam are used as elastic elements, the two mass blocks convert perceived acceleration information (a x、ay、az) into elastic element deformation, so that the output electric signals of 3 Wheatstone bridge structures formed by 12 piezoresistors at the root of the elastic element are changed, and the detection of acceleration (a x、ay、az) in three directions can be respectively realized; and by optimizing the sizes of the 4 double-L-shaped beams, the two mass blocks and the middle double beam, the last three detection circuits are preferable to have better consistency in detecting the corresponding acceleration.
Description
Technical Field
The invention relates to the technical field of sensors, in particular to an acceleration sensor, and particularly relates to a monolithic integrated triaxial acceleration sensor and a manufacturing process thereof.
Background
With rapid development of science and technology, the sensor technology is paid attention to, and is widely applied to the fields of modern industry, automobile electronics, aerospace, deep sea detection and the like.
In the related art, sensors for detecting triaxial acceleration include a capacitive triaxial acceleration sensor, a piezoelectric triaxial acceleration sensor, a piezoresistive triaxial acceleration sensor, and the like. In order to realize simultaneous measurement of acceleration in three directions in space, three-axis acceleration detection is performed by combining and packaging corresponding sensitive units.
However, in the triaxial acceleration sensor disclosed in the prior art, due to certain differences of the sensitive units in all directions, the sensor has the problem of inconsistent characteristics such as sensitivity, measuring range, accuracy and the like in the process of simultaneously measuring the accelerations in three directions in space. In particular, in the prior art sensor, the sensitivity in the x, y directions is too low, while the sensitivity in the z direction is too high.
Disclosure of Invention
In order to solve the above problems, the present inventors have made intensive studies, by using a micro-electro-mechanical processing (MEMS) method, using 4 double-L beams, two mass blocks, and a double beam in the middle of the two beams as elastic elements, the two mass blocks (m 1、m2) converting the perceived acceleration information (a x、ay、az) into deformation of the elastic elements, causing the output electric signals (V xout1、Vxout2、Vyout1、Vyout2、Vzout1、Vzout2) of the 3 wheatstone bridge structures composed of 12 piezoresistors at the root of the elastic elements to change, and thus realizing detection of acceleration (a x、ay、az) in three directions, respectively; the invention is completed by optimizing the sizes of the 4 double L-shaped beams and the middle double beams of the two mass blocks, and preferably, the last three detection circuits have better consistency in detecting the corresponding accelerations.
The invention provides a monolithic integrated triaxial acceleration sensor, which is specifically characterized in that:
(1) The utility model provides a monolithic integrated triaxial acceleration sensor, wherein, the sensor uses the SOI piece as the carrier, the SOI piece includes device silicon 1 and substrate silicon 2, wherein the central point of sensor is etched there is unsettled structure, unsettled structure includes first quality piece m1, second quality piece m2, first intermediate beam ZL1, second intermediate beam ZL2 and four L type roof beams, wherein, split four L type roof beams along vertical, form eight L trabeculae, be first L trabecula L1, second L trabecula L2, third L trabecula L3, fourth L trabecula L4, fifth L trabecula L5, sixth L trabecula L6, seventh L trabecula L7 and eighth L trabecula L8 respectively.
(2) The monolithically integrated triaxial acceleration sensor according to the above (1), wherein the first mass m1 and the second mass m2 are located at the center of the suspended structure, preferably, the first mass m1 and the second mass m2 are symmetrically arranged along the x-direction center line or the y-direction center line of the sensor.
(3) The monolithically integrated triaxial acceleration sensor according to the above (1) or (2), wherein the first and second intermediate beams ZL1 and ZL2 are disposed between the first and second masses m1 and m2 for connecting the first and second masses m1 and m2;
Preferably, the first middle beam ZL1 and the second middle beam ZL2 are symmetrically arranged along the y-direction central line or the x-direction central line of the sensor, and are perpendicular to the first mass block m1 and the second mass block m 2;
more preferably, the thickness of the first intermediate beam ZL1 and the second intermediate beam ZL2 is equal to the thickness of the device silicon.
(4) The monolithically integrated triaxial acceleration sensor according to one of the above (1) to (3), wherein,
A side surface of the first mass block m1 facing away from the first middle beam ZL1 and the second middle beam ZL2 is connected with the second L trabecula L2, the seventh L trabecula L7, the fourth L trabecula L4 and the eighth L trabecula L8; and/or
And one side surface of the second mass block m2, which is opposite to the first middle beam ZL1 and the second middle beam ZL2, is connected with the first L-shaped trabecula L1, the fifth L-shaped trabecula L5, the third L-shaped trabecula L3 and the sixth L-shaped trabecula L6.
(5) The monolithically integrated triaxial acceleration sensor according to one of the above (1) to (4), wherein x-direction first piezoresistor R x1, x-direction second piezoresistor R x2, x-direction third piezoresistor R x3 and x-direction fourth piezoresistor R x4, which are parallel to each other, are provided at the root portions of the first L-trabecula L1, the second L-trabecula L2, the third L-trabecula L3 and the fourth L-trabecula L4, respectively;
Preferably, one end of the x-direction first piezoresistor R x1 is connected with one end of the x-direction second piezoresistor R x2, and the connection part forms an x-axis first output voltage V xout1; one end of the x-direction third piezoresistor R x3 is connected with one end of the x-direction fourth piezoresistor R x4, and an x-axis second output voltage V xout2 is formed at the connection part;
More preferably, the other end of the x-direction first piezoresistor R x1 and the other end of the x-direction fourth piezoresistor R x4 are commonly connected to the power supply V DD, and the other end of the x-direction second piezoresistor R x2 and the other end of the x-direction third piezoresistor R x3 are grounded.
(6) The monolithically integrated triaxial acceleration sensor according to one of the above (1) to (5), wherein y-direction first piezoresistor R y1, y-direction second piezoresistor R y2, y-direction third piezoresistor R y3 and y-direction fourth piezoresistor R y4 parallel to each other are provided at the root portions of the fifth L trabecula L5, sixth L trabecula L6, seventh L trabecula L7 and eighth L trabecula L8;
Preferably, one end of the y-direction first piezoresistor R y1 is connected with one end of the y-direction second piezoresistor R y2, and the connection part forms a y-axis first output voltage V yout1; one end of the y-direction third piezoresistor R y3 is connected with one end of the y-direction fourth piezoresistor R y4, and a y-axis second output voltage V yout2 is formed at the connection part;
More preferably, the other end of the y-direction first piezoresistor R y1 and the other end of the y-direction fourth piezoresistor R y4 are commonly connected to the power supply V DD, and the other end of the y-direction second piezoresistor R y2 and the other end of the y-direction third piezoresistor R y3 are grounded.
(7) The monolithically integrated triaxial acceleration sensor according to one of the above (1) to (6), wherein,
The root parts of the first middle beam ZL1, which are connected with the first mass block m1 and the second mass block m2, are respectively provided with a first z-direction piezoresistor R z1 and a second z-direction piezoresistor R z2 which are perpendicular to each other; and/or
The root parts of the second intermediate beam ZL2, which are connected with the first mass block m1 and the second mass block m2, are respectively provided with a z-direction fourth piezoresistor R z4 and a z-direction third piezoresistor R z3 which are perpendicular to each other.
(8) The monolithic integrated triaxial acceleration sensor according to any one of (1) to (7) above, wherein one end of the z-direction first varistor R z1 is connected to one end of the z-direction second varistor R z2, and the connection forms a z-axis first output voltage V zout1; one end of the z-direction third piezoresistor R z3 is connected with one end of the z-direction fourth piezoresistor R z4, and a z-axis second output voltage V zout2 is formed at the connection part;
Preferably, the other end of the z-direction first piezoresistor R z1 and the other end of the z-direction fourth piezoresistor R z4 are commonly connected to the power supply V DD, and the other end of the z-direction second piezoresistor R z2 and the other end of the z-direction third piezoresistor R z3 are grounded to GND.
(9) A process for manufacturing the monolithically integrated triaxial acceleration sensor according to one of the above (1) to (8), wherein the process is performed as follows:
Step 1, cleaning an SOI (silicon on insulator) sheet (shown in FIG. 4A), performing primary oxidation on the upper surface of the device silicon 1, and growing a SiO 2 layer serving as an insulating medium layer;
Step 2, cleaning the SOI sheet, depositing an nc-Si: H (p -) film on an nc-Si: H (p -) window by adopting a plasma chemical vapor deposition (PECVD) in-situ doping process, performing one-time photoetching, and etching to form an nc-Si: H (p -) film piezoresistor;
Step 3, cleaning the SOI wafer, performing secondary photoetching, performing ion implantation on the upper surface of the SOI wafer device silicon 1, and performing p + type doping, wherein the implantation dosage is preferably 5E14cm -2 to 5E15cm -2;
Step 4, cleaning the SOI wafer, and performing high-temperature annealing treatment to form 12 piezoresistors (Rx1、Rx2、Rx3、Rx4、Ry1、Ry2、Ry3、Ry4、Rz1、Rz2、Rz3、Rz4)( as shown in FIG. 4B);
Step 5, cleaning the SOI wafer, performing secondary oxidation, and growing a SiO 2 layer on the upper surface of the SOI wafer device silicon 1 by a chemical vapor deposition method to serve as an insulating medium layer;
Step 6, three times of photoetching, namely, BOE corroding the SiO 2 layer to form a contact hole;
step 7, cleaning the SOI sheet, and growing a metal Al layer on the upper surface of the device silicon 1 by magnetron sputtering to form a metal electrode layer;
Step 8, photoetching for four times, and corroding the metal Al layer to form a metal electrode;
Step 9, cleaning the silicon wafer, and growing a SiO 2 layer on the upper surface of the device silicon 1 by chemical vapor deposition, wherein the thickness is preferably 3000-5000 nm and the SiO 2 layer is used as a passivation layer;
step 10, photoetching for five times, corroding the passivation layer to form a pressure welding spot;
Step 11, cleaning the silicon wafer, and performing alloying treatment to form ohmic contact (shown in fig. 4C);
Step 12, six times of photoetching, namely etching the oxide layer at the bottom of the substrate silicon 2 by BOE, and etching the substrate silicon by a deep groove etching technology (ICP) to the position of the silicon dioxide layer 3;
Step 13, seven times of photoetching, namely BOE etching the front oxide layer of the device silicon 1, etching the device silicon 1 by a deep groove etching technology (ICP) until the silicon dioxide layer 3 is etched, and releasing L-shaped trabecular structures (L1, L2, L3, L4, L5, L6, L7 and L8) (shown in figure 4D);
And 14, bonding the SOI sheet and the glass sheet with the overload protection structure by a bonding process, so as to realize the overload protection function.
(10) The manufacturing process according to the above (9), wherein,
The device silicon 1 of the SOI sheet is <100> crystal orientation single crystal silicon, the conductivity type is n type, preferably, the resistivity of the device silicon 1 of the SOI sheet is 0.01-10Ω -cm, preferably 0.1-1Ω -cm; and/or
In step 3, the thickness of the deposited nc-Si: H (p -) film is 50 to 120nm, preferably 60 to 100nm; and/or
In step 5, the high temperature annealing treatment is performed as follows: vacuum-treating at 600-1200deg.C for 20-50 min, preferably at 800-1000deg.C for 30-40 min; and/or
In step 12, the alloying treatment proceeds as follows: the treatment is carried out at 350 to 500℃for 10 to 50min, preferably at 400 to 450℃for 20 to 40min, more preferably at 420℃for 30min.
Drawings
FIG. 1 shows a schematic top view of a monolithically integrated triaxial sensor according to the present invention;
FIG. 2 shows a schematic bottom view of a monolithically integrated triaxial sensor according to the present invention;
Fig. 3A to 3B show equivalent circuit diagrams of the monolithically integrated triaxial sensor according to the present invention, wherein fig. 3A is when there is no acceleration, and fig. 3B is when there is acceleration;
FIGS. 4A-4D are process diagrams illustrating the fabrication process of the present invention;
FIG. 5 shows a schematic top view of a monolithically integrated triaxial acceleration sensor employed in a comparative experimental example;
Fig. 6 shows a schematic bottom view of a monolithically integrated triaxial acceleration sensor employed in the comparative experimental example.
Description of the reference numerals
1-Device silicon; 2-substrate silicon; a 3-silicon dioxide layer; m 1-a first mass; m 2-a second mass; ZL 1-first intermediate beam; ZL 2-second intermediate beam; l1-a first L trabecula; l2-second L trabeculae; l3-third L trabeculae; l4-fourth L trabeculae; l5-fifth L trabeculae; l6-sixth L trabeculae; l7-seventh L trabeculae; l8-eighth L trabeculae; r x1 -x is directed to the first piezoresistor; r x2 -x is directed to the second piezoresistor; R x3 -x is directed to a third piezoresistor; r x4 -x is directed to a fourth piezoresistor; v xout1 -x axis first output voltage; v xout2 -x axis second output voltage; R y1 -y is directed to the first piezoresistor; r y2 -y is directed to a second piezoresistor; r y3 -y is directed to a third piezoresistor; r y4 -y is directed to a fourth piezoresistor; V yout1 -y axis first output voltage; v yout2 -y axis second output voltage; r z1 -z direction first piezoresistor; r z2 -z direction second piezoresistor; R z3 -z direction third piezoresistor; r z4 -z direction fourth piezoresistor; v zout1 -z axis first output voltage; v zout2 -z axis second output voltage; V DD -power supply; GND-ground.
Detailed Description
The features and advantages of the present invention will become more apparent and clear from the following detailed description of the invention.
In one aspect, as shown in fig. 1-2, the sensor uses an SOI sheet as a carrier, the SOI sheet includes a device silicon 1 and a substrate silicon 2, a suspended structure is etched at a center position of the sensor, the suspended structure includes a first mass block m1, a second mass block m2, a first middle beam ZL1, a second middle beam ZL2 and four L-shaped beams, wherein the four L-shaped beams are split longitudinally to form eight L-shaped beams, which are a first L-shaped beam L1, a second L-shaped beam L2, a third L-shaped beam L3, a fourth L-shaped beam L4, a fifth L-shaped beam L5, a sixth L-shaped beam L6, a seventh L-shaped beam L7 and an eighth L-shaped beam L8, respectively.
The four L-shaped beams are split to form eight L-shaped trabeculae, so that the sensitivity in the x-axis direction and the y-axis direction can be obviously improved, the sensitivity in the x-axis direction and the y-axis direction is almost close to the sensitivity in the z-axis direction, and the sensitivity consistency in each direction of x, y and z is promoted.
According to a preferred embodiment of the invention, the thickness of the device silicon 1 is 20-50 μm and the thickness of the substrate silicon 2 is 420-550 μm.
In a further preferred embodiment, the thickness of the device silicon 1 is 30-40 μm and the thickness of the substrate silicon 2 is 420-550 μm, for example 450-525 μm.
According to a preferred embodiment of the invention, as shown in fig. 1-2, the first mass m1 and the second mass m2 are located in the center of the suspended structure.
In a further preferred embodiment, as shown in fig. 1-2, the first mass m1 and the second mass m2 are symmetrically arranged along the x-direction centerline or the y-direction centerline of the sensor.
In a further preferred embodiment, the thickness of the first mass m1 and the second mass m2 is equal to the maximum thickness of the sensor.
According to a preferred embodiment of the present invention, as shown in fig. 1-2, the first intermediate beam ZL1 and the second intermediate beam ZL2 are disposed between the first mass block m1 and the second mass block m2, and are used for connecting the first mass block m1 and the second mass block m2.
In a further preferred embodiment, as shown in fig. 1-2, the first intermediate beam ZL1 and the second intermediate beam ZL2 are symmetrically arranged along the y-direction centerline or the x-direction centerline of the sensor, and are perpendicular to the first mass m1 and the second mass m 2.
In a still further preferred embodiment, the thickness of the first and second intermediate beams ZL1, ZL2 is equal to the thickness of the device silicon.
In this way, the first and second intermediate beams ZL1 and ZL2 are provided on the device silicon as the SOI sheet.
According to a preferred embodiment of the invention, as shown in fig. 1-2, the side of the first mass m1 facing away from the first intermediate beam ZL1 and the second intermediate beam ZL2 is connected to the second L trabeculae L2, the seventh L trabeculae L7, the fourth L trabeculae L4 and the eighth L trabeculae L8.
In a further preferred embodiment, as shown in fig. 1-2, a side of the second mass m2 facing away from the first intermediate beam ZL1 and the second intermediate beam ZL2 is connected to the first L-shaped trabeculae L1, the fifth L-shaped trabeculae L5, the third L-shaped trabeculae L3 and the sixth L-shaped trabeculae L6.
Thus, the suspended structure is formed.
According to a preferred embodiment of the present invention, as shown in fig. 1, x-direction first piezoresistor R x1, x-direction second piezoresistor R x2, x-direction third piezoresistor R x3 and x-direction fourth piezoresistor R x4 are respectively provided in the root portions of the first L trabecula L1, the second L trabecula L2, the third L trabecula L3 and the fourth L trabecula L4 in parallel with each other.
In a further preferred embodiment, as shown in fig. 1 and fig. 3A-3B, one end of the x-direction first piezoresistor R x1 is connected to one end of the x-direction second piezoresistor R x2, and the connection forms an x-axis first output voltage V xout1; one end of the x-direction third piezoresistor R x3 is connected with one end of the x-direction fourth piezoresistor R x4, and the connection part forms an x-axis second output voltage V xout2.
In a further preferred embodiment, as shown in fig. 1 and 3A-3B, the other end of the x-direction first varistor R x1 and the other end of the x-direction fourth varistor R x4 are commonly connected to a power supply V DD, and the other end of the x-direction second varistor R x2 and the other end of the x-direction third varistor R x3 are grounded.
Thus, the four piezoresistors at the root of the first L-trabecula L1, the second L-trabecula L2, the third L-trabecula L3 and the fourth L-trabecula L4 form a Wheatstone bridge for detecting acceleration in the x-direction.
According to a preferred embodiment of the present invention, as shown in fig. 1, y-direction first piezoresistor R y1, y-direction second piezoresistor R y2, y-direction third piezoresistor R y3 and y-direction fourth piezoresistor R y4 are provided in parallel to each other at the root of the fifth L trabecula L5, sixth L trabecula L6, seventh L trabecula L7 and eighth L trabecula L8.
In a further preferred embodiment, as shown in fig. 1 and 3A-3B, one end of the y-direction first varistor R y1 is connected to one end of the y-direction second varistor R y2, and the connection forms a y-axis first output voltage V yout1; one end of the y-direction third piezoresistor R y3 is connected with one end of the y-direction fourth piezoresistor R y4, and the connection part forms a y-axis second output voltage V yout2.
In a further preferred embodiment, as shown in fig. 1 and 3A-3B, the other end of the y-direction first varistor R y1 and the other end of the y-direction fourth varistor R y4 are commonly connected to a power supply V DD, and the other ends of the y-direction second varistor R y2 and the y-direction third varistor R y3 are grounded.
Thus, the four piezoresistors at the root of the fifth L-trabecular L5, the sixth L-trabecular L6, the seventh L-trabecular L7 and the eighth L-trabecular L8 form a Wheatstone bridge for detecting the acceleration in the y-direction.
According to a preferred embodiment of the present invention, as shown in fig. 1, the first intermediate beam ZL1 is provided with a first piezo-resistor R z1 and a second piezo-resistor R z2 perpendicular to each other at the root connected to the first mass block m1 and the second mass block m 2.
In a further preferred embodiment, as shown in fig. 1, the second intermediate beam ZL2 is provided with a z-direction fourth varistor R z4 and a z-direction third varistor R z3 perpendicular to each other at the root portions connected to the first mass block m1 and the second mass block m2, respectively.
In a further preferred embodiment, as shown in fig. 1, the z-direction first varistor R z1 is disposed perpendicular to the z-direction fourth varistor R z4, and the z-direction second varistor R z2 is disposed perpendicular to the z-direction third varistor R z3.
The four piezoresistors (the first piezoresistor R z1 in the z direction, the second piezoresistor R z2 in the z direction, the third piezoresistor R z3 in the z direction, and the fourth piezoresistor R z4 in the z direction) provided on the first intermediate beam ZL1 and the second intermediate beam ZL2 are used for detecting the acceleration in the z axis direction.
According to a preferred embodiment of the present invention, as shown in fig. 1 and 3A-3B, one end of the z-direction first piezoresistor R z1 is connected to one end of the z-direction second piezoresistor R z2, and the connection forms a z-axis first output voltage V zout1; one end of the third z-direction piezoresistor R z3 is connected with one end of the fourth z-direction piezoresistor R z4, and a second z-axis output voltage V zout2 is formed at the connection position.
In a further preferred embodiment, as shown in fig. 1 and 3A-3B, the other end of the z-direction first varistor R z1 and the other end of the z-direction fourth varistor R z4 are commonly connected to a power source V DD, and the other end of the z-direction second varistor R z2 and the other end of the z-direction third varistor R z3 are grounded to GND.
Thus, the four piezoresistors disposed on the first intermediate beam ZL1 and the second intermediate beam ZL2 form a wheatstone bridge for detecting the acceleration in the z direction.
According to a preferred embodiment of the invention, the 12 piezoresistors are all nano-silicon thin film resistors nc-Si: H (p -).
The 12 piezoresistors comprise an x-direction first piezoresistor R x1, an x-direction second piezoresistor R x2, an x-direction third piezoresistor R x3, an x-direction fourth piezoresistor R x4, a y-direction first piezoresistor R y1, a y-direction second piezoresistor R y2, a y-direction third piezoresistor R y3, a y-direction fourth piezoresistor R y4, a z-direction first piezoresistor R z1, a z-direction second piezoresistor R z2, a z-direction third piezoresistor R z3 and a z-direction fourth piezoresistor R z4.
In the present invention, it is preferable to use a nano-silicon thin film varistor in which the nano-silicon (nc-Si: H) thin film is a novel nano-electronic material composed of a large number of fine silicon grains (several nanometers in size) and grain boundaries surrounding it. The nano silicon (nc-Si: H) film has a high piezoresistive coefficient, the piezoresistive coefficient is higher than that of monocrystalline silicon material and polycrystalline silicon, which is about 4-6 times that of monocrystalline silicon, and can realize high-sensitivity pressure-sensitive test.
According to a preferred embodiment of the present invention, the ratio of the length of the first mass m1 or the length of the second mass m2 to the side length of the SOI sheet is (0.5 to 0.65): 1.
In a further preferred embodiment, the ratio of the width of the first mass m1 or the width of the second mass m2 to the side length of the SOI sheet is (0.2 to 0.3): 1.
In the present invention, the SOI wafer preferably has a square cross section.
According to a preferred embodiment of the present invention, the ratio of the length of the first intermediate beam ZL1 or the length of the second intermediate beam ZL2 to the side length of the SOI sheet is (0.05 to 0.1): 1.
In a further preferred embodiment, the ratio of the width of the first intermediate beam ZL1 or the width of the second intermediate beam ZL2 to the side length of the SOI sheet is (0.05 to 0.2): 1.
In the invention, the sensitivity in the z-axis direction is reduced by re-adjusting the size of the mass block and the intermediate beam relative to the sensor. In addition, 4L Liang Cafen are formed into 8 trabeculae before, so that under the same acceleration effect, the stress distribution of the root of the L beam is improved, the sensitivity of the x axis and the y axis is effectively improved, and the sensitivity of the x axis and the y axis is improved, and meanwhile, the sensitivity of the z axis is reduced, so that the sensitivity of the x axis, the y axis and the z axis tends to be consistent.
According to a preferred embodiment of the invention, the sensor further comprises a glass sheet having a hollow groove structure.
In a further preferred embodiment, the glass sheet is bonded to the substrate silicon 2 of the SOI sheet.
In a still further preferred embodiment, the glass sheet is a borosilicate glass sheet having a thickness of (0.5 to 1 μm).
In this way, the complex process of thinning the masses is avoided, but instead bonding with a glass sheet having grooves is employed so that the first mass and the second mass can move freely within the grooves.
The second aspect of the invention provides a manufacturing process of the monolithic integrated triaxial acceleration sensor according to the first aspect of the invention, which is performed as follows:
Step 1, cleaning an SOI (silicon on insulator) sheet (shown in FIG. 4A), performing primary oxidation on the upper surface of the device silicon 1, and growing a SiO 2 layer serving as an insulating medium layer;
Step 2, cleaning the SOI sheet, depositing an nc-Si: H (p -) film on an nc-Si: H (p -) window by adopting a plasma chemical vapor deposition (PECVD) in-situ doping process, performing one-time photoetching, and etching to form an nc-Si: H (p -) film piezoresistor;
Step 3, cleaning the SOI wafer, performing secondary photoetching, performing ion implantation on the upper surface of the SOI wafer device silicon 1, and performing p + type doping, wherein the implantation dosage is preferably 5E14cm -2 to 5E15cm -2;
Step 4, cleaning the SOI wafer, and performing high-temperature annealing treatment to form 12 piezoresistors (Rx1、Rx2、Rx3、Rx4、Ry1、Ry2、Ry3、Ry4、Rz1、Rz2、Rz3、Rz4)( as shown in FIG. 4B);
Step 5, cleaning the SOI wafer, performing secondary oxidation, and growing a SiO 2 layer on the upper surface of the SOI wafer device silicon 1 by a chemical vapor deposition method to serve as an insulating medium layer;
Step 6, three times of photoetching, namely, BOE corroding the SiO 2 layer to form a contact hole;
step 7, cleaning the SOI sheet, and growing a metal Al layer on the upper surface of the device silicon 1 by magnetron sputtering to form a metal electrode layer;
Step 8, photoetching for four times, and corroding the metal Al layer to form a metal electrode;
Step 9, cleaning the silicon wafer, and growing a SiO 2 layer on the upper surface of the device silicon 1 by chemical vapor deposition, wherein the thickness is preferably 3000-5000 nm and the SiO 2 layer is used as a passivation layer;
step 10, photoetching for five times, corroding the passivation layer to form a pressure welding spot (pad);
Step 11, cleaning the silicon wafer, and performing alloying treatment to form ohmic contact (shown in fig. 4C);
Step 12, six times of photoetching, namely etching the oxide layer at the bottom of the substrate silicon 2 by BOE, and etching the substrate silicon by a deep groove etching technology (ICP) to the position of the silicon dioxide layer 3;
Step 13, seven times of photoetching, namely BOE etching the front oxide layer of the device silicon 1, etching the device silicon 1 by a deep groove etching technology (ICP) until the silicon dioxide layer 3 is etched, and releasing L-shaped trabecular structures (L1, L2, L3, L4, L5, L6, L7 and L8) (shown in figure 4D);
And 14, bonding the SOI sheet and the glass sheet with the overload protection structure by a bonding process, so as to realize the overload protection function.
According to a preferred embodiment of the present invention, the device silicon 1 of the SOI wafer is single crystal silicon with <100> crystal orientation and the conductivity type is n-type.
In a further preferred embodiment, the resistivity of the device silicon 1 of the SOI sheet is 0.01 to 10Ω·cm, preferably 0.1 to 1Ω·cm.
In a still further preferred embodiment, the device silicon 1 of the SOI wafer has a thickness of 20-50 μm, for example 30-40 μm.
According to a preferred embodiment of the present invention, the thickness of the substrate silicon 2 of the SOI sheet is 420-550 μm.
In a further preferred embodiment, the thickness of the substrate silicon 2 of the SOI sheet is 450 to 525 μm.
In a still further preferred embodiment, the thickness of the substrate silicon 2 of the SOI wafer is 475 to 500 μm.
According to a preferred embodiment of the invention, in step 1 and step 6, the thickness of the grown SiO 2 layer is 200-600nm.
In a further preferred embodiment, in step 1 and step 6, the thickness of the grown SiO 2 layer is 300-500nm.
According to a preferred embodiment of the invention, in step 3, the deposited nc-Si: H (p -) film has a thickness of 50 to 120nm.
In a further preferred embodiment, in step 3, the deposited nc-Si: H (p -) film has a thickness of 60 to 100nm.
According to a preferred embodiment of the present invention, in step 8, the thickness of the grown metallic Al layer is 500 to 1000nm.
In a further preferred embodiment, in step 8, the thickness of the grown metallic Al layer is 600-800 nm.
According to a preferred embodiment of the present invention, in step 5, the high temperature annealing treatment is performed as follows: vacuum processing at 600-1200 deg.c for 20-50 min.
In a further preferred embodiment, in step 5, the high temperature annealing treatment is performed as follows: vacuum processing at 800-1000 deg.c for 30-40 min.
According to a preferred embodiment of the invention, in step 12, the alloying treatment is performed as follows: treating at 350-500 deg.c for 10-50 min.
In a further preferred embodiment, in step 12, the alloying treatment is performed as follows: treating at 400-450 deg.c for 20-40 min.
In a still further preferred embodiment, in step 12, the alloying treatment is performed as follows: treating at 420 ℃ for 30min.
According to a preferred embodiment of the invention, the glass sheet is a hollow groove structure.
Thus, after the glass sheet with the hollow groove structure is bonded with the SOI sheet processed in the steps 1-13, the first mass block and the second mass block can move. In this way, handling of the SOI wafer is avoided, and thus, complex SOI wafer handling is avoided with simple glass wafer bonding.
In a further preferred embodiment, the glass sheet is bonded to the substrate silicon 2 of the SOI sheet.
In a still further preferred embodiment, the glass sheet is a borosilicate glass sheet having a thickness of (0.5 to 1 μm).
According to a third aspect of the invention, there is provided a monolithically integrated triaxial acceleration sensor obtained according to the manufacturing process according to the second aspect of the invention.
The invention has the beneficial effects that:
(1) According to the monolithic integrated triaxial acceleration sensor, 4 double-L-shaped beams, 12 piezoresistors, a double beam in the middle of a mass block and two mass blocks are effectively combined and monolithically integrated to respectively form three pairs of test circuits, so that triaxial acceleration (a x、ay、az) detection is realized;
(2) According to the monolithic integrated triaxial acceleration sensor, 4L-shaped beams are split to form eight L-shaped trabeculae, so that the sensitivity in the x-axis direction and the y-axis direction is remarkably improved, and the sensitivity consistency in the x, y and z directions is promoted;
(3) The monolithic integrated triaxial acceleration sensor is simple in structure, and the miniaturization and integration of a chip are realized;
(4) The manufacturing process is simple, easy to realize and suitable for large-scale industrial application.
Experimental example
The characteristic test system of the acceleration sensor is built by adopting a standard vibration table (Dongling ESS-050), a programmable linear direct current power supply (RIGOL DP 832A), a digital universal meter (Agilent 34410A), an oscilloscope (Agilent DSO-X4145A) and other instruments, the characteristic test is carried out on the monolithic integrated triaxial acceleration sensor (shown in figure 1) provided by the invention, and the sensitivity characteristics and the like of the monolithic integrated triaxial acceleration sensor are analyzed.
When the power supply voltage is 5.0V, the sensitivity of the X-axis direction acceleration sensor of the sensor is 0.85mV/g, the sensitivity of the Y-axis direction acceleration sensor is 0.84mV/g, and the sensitivity of the Z-axis direction acceleration sensor is 0.82mV/g.
It can be seen that the sensor can detect triaxial acceleration, and the sensitivity of the obtained three directions of x, y and z is nearly identical.
Comparative experimental example
The characteristic test system of the acceleration sensor is built by adopting a standard vibration table (Dongling ESS-050), a programmable linear direct current power supply (RIGOL DP 832A), a digital universal meter (Agilent 34410A), an oscilloscope (Agilent DSO-X4145A) and other instruments, the characteristic test is carried out on the monolithic integrated triaxial acceleration sensor shown in figures 5-6, and the sensitivity characteristic and the like of the monolithic integrated triaxial acceleration sensor are analyzed. In fig. 5 to 6, the 4L-shaped beams are not split.
When the power supply voltage is 5.0V, the sensitivity of the x-axis direction acceleration sensor of the sensor shown in fig. 5-6 is 0.60mV/g, the sensitivity of the y-axis direction acceleration sensor is 0.74mV/g, and the sensitivity of the z-axis direction acceleration sensor is 2.60mV/g.
It can be seen that the sensors shown in fig. 5 to 6 can detect triaxial acceleration, and the sensitivity in the x, y and z directions obtained singly is uniform and very poor.
The invention has been described in detail in connection with the specific embodiments and exemplary examples thereof, but such description is not to be construed as limiting the invention. It will be understood by those skilled in the art that various equivalent substitutions, modifications or improvements may be made to the technical solution of the present invention and its embodiments without departing from the spirit and scope of the present invention, and these fall within the scope of the present invention. The scope of the invention is defined by the appended claims.
Claims (10)
1. The monolithic integrated triaxial acceleration sensor is characterized in that the sensor takes an SOI (silicon on insulator) sheet as a carrier, the SOI sheet comprises device silicon (1) and substrate silicon (2), a suspended structure is etched at the center of the sensor, the suspended structure comprises a first mass block (m 1), a second mass block (m 2), a first middle beam (ZL 1), a second middle beam (ZL 2) and four L-shaped beams, wherein the four L-shaped beams are split longitudinally to form eight L-shaped beams, namely a first L-shaped beam (L1), a second L-shaped beam (L2), a third L-shaped beam (L3), a fourth L-shaped beam (L4), a fifth L-shaped beam (L5), a sixth L-shaped beam (L6), a seventh L-shaped beam (L7) and an eighth L-shaped beam (L8);
the first middle beam (ZL 1) and the second middle beam (ZL 2) are arranged between the first mass block (m 1) and the second mass block (m 2) and are used for connecting the first mass block (m 1) and the second mass block (m 2);
The first middle beam (ZL 1) and the second middle beam (ZL 2) are symmetrically arranged along the y-direction central line or the x-direction central line of the sensor and are perpendicular to the first mass block (m 1) and the second mass block (m 2);
One side surface of the first mass block (m 1) facing away from the first middle beam (ZL 1) and the second middle beam (ZL 2) is connected with the second L trabecula (L2), the seventh L trabecula (L7), the fourth L trabecula (L4) and the eighth L trabecula (L8);
And one side surface of the second mass block (m 2) facing away from the first middle beam (ZL 1) and the second middle beam (ZL 2) is connected with the first L trabecula (L1), the fifth L trabecula (L5), the third L trabecula (L3) and the sixth L trabecula (L6).
2. The monolithically integrated triaxial acceleration sensor according to claim 1, characterized in, that the first mass (m 1) and the second mass (m 2) are located in the center of the suspended structure, the first mass (m 1) and the second mass (m 2) being symmetrically arranged along the x-direction centerline or the y-direction centerline of the sensor.
3. The monolithically integrated triaxial acceleration sensor according to claim 1, characterized in, that,
The thickness of the first intermediate beam (ZL 1) and the second intermediate beam (ZL 2) is equal to the thickness of the device silicon.
4. The monolithically integrated triaxial acceleration sensor according to claim 1, characterized in that x-direction first piezoresistors (R x1), x-direction second piezoresistors (R x2), x-direction third piezoresistors (R x3) and x-direction fourth piezoresistors (R x4) parallel to each other are provided at the root portions of the first L-trabecula (L1), the second L-trabecula (L2), the third L-trabecula (L3) and the fourth L-trabecula (L4), respectively;
the roots of the fifth L trabecula (L5), the sixth L trabecula (L6), the seventh L trabecula (L7) and the eighth L trabecula (L8) are provided with a y-direction first piezoresistor (R y1), a y-direction second piezoresistor (R y2), a y-direction third piezoresistor (R y3) and a y-direction fourth piezoresistor (R y4) which are parallel to each other.
5. The monolithically integrated triaxial acceleration sensor according to claim 4,
One end of the x-direction first piezoresistor (R x1) is connected with one end of the x-direction second piezoresistor (R x2), and an x-axis first output voltage (V xout1) is formed at the connection part; one end of the x-direction third piezoresistor (R x3) is connected with one end of the x-direction fourth piezoresistor (R x4), and an x-axis second output voltage (V xout2) is formed at the connection part;
The other end of the x-direction first piezoresistor (R x1) and the other end of the x-direction fourth piezoresistor (R x4) are commonly connected with a power supply (V DD), and the other end of the x-direction second piezoresistor (R x2) and the other end of the x-direction third piezoresistor (R x3) are grounded.
6. The monolithically integrated triaxial acceleration sensor according to claim 4,
One end of the y-direction first piezoresistor (R y1) is connected with one end of the y-direction second piezoresistor (R y2), and a y-axis first output voltage (V yout1) is formed at the connection part; one end of the y-direction third piezoresistor (R y3) is connected with one end of the y-direction fourth piezoresistor (R y4), and a y-axis second output voltage (V yout2) is formed at the connection part;
The other end of the y-direction first piezoresistor (R y1) and the other end of the y-direction fourth piezoresistor (R y4) are commonly connected with a power supply (V DD), and the other end of the y-direction second piezoresistor (R y2) and the other end of the y-direction third piezoresistor (R y3) are grounded.
7. The monolithically integrated triaxial acceleration sensor according to one of the claims 1 to 6, characterized in, that,
The root part of the first middle beam (ZL 1) connected with the first mass block (m 1) and the second mass block (m 2) is respectively provided with a first z-direction piezoresistor (R z1) and a second z-direction piezoresistor (R z2) which are perpendicular to each other;
the second middle beam (ZL 2) is respectively provided with a z-direction fourth piezoresistor (R z4) and a z-direction third piezoresistor (R z3) which are perpendicular to each other at the root part connected with the first mass block (m 1) and the second mass block (m 2).
8. The monolithically integrated triaxial acceleration sensor according to claim 7, characterized in, that one end of the z-direction first piezo-resistor (R z1) is connected to one end of the z-direction second piezo-resistor (R z2), where a z-axis first output voltage (V zout1) is formed; one end of the z-direction third piezoresistor (R z3) is connected with one end of the z-direction fourth piezoresistor (R z4), and a z-axis second output voltage (V zout2) is formed at the connection part;
The other end of the z-direction first piezoresistor (R z1) and the other end of the z-direction fourth piezoresistor (R z4) are commonly connected with a power supply (V DD), and the other end of the z-direction second piezoresistor (R z2) and the other end of the z-direction third piezoresistor (R z3) are Grounded (GND).
9. A process for manufacturing a monolithically integrated triaxial acceleration sensor according to one of the claims 1 to 8, characterized in, that the process is performed as follows:
Step 1, cleaning an SOI (silicon on insulator) sheet, performing primary oxidation on the upper surface of device silicon (1), and growing a SiO 2 layer serving as an insulating medium layer;
Step 2, cleaning the SOI sheet, depositing an nc-Si: H (p -) film on an nc-Si: H (p -) window by adopting a plasma chemical vapor deposition in-situ doping process, performing one-time photoetching, and etching to form an nc-Si: H (p -) film piezoresistor;
Step 3, cleaning the SOI wafer, carrying out secondary photoetching, carrying out ion implantation on the upper surface of the SOI wafer device silicon (1), and carrying out p + type doping, wherein the implantation dosage is 5E14cm -2 to 5E15cm -2;
Step 4, cleaning the SOI sheet, and performing high-temperature annealing treatment to form 12 piezoresistors;
step 5, cleaning the SOI wafer, performing secondary oxidation, and growing a SiO 2 layer on the upper surface of the SOI wafer device silicon (1) by a chemical vapor deposition method to serve as an insulating medium layer;
Step 6, three times of photoetching, namely, BOE corroding the SiO 2 layer to form a contact hole;
step 7, cleaning the SOI sheet, and growing a metal Al layer on the upper surface of the device silicon (1) by magnetron sputtering to form a metal electrode layer;
Step 8, photoetching for four times, and corroding the metal Al layer to form a metal electrode;
Step 9, cleaning the silicon wafer, and growing a SiO 2 layer on the upper surface of the device silicon (1) by chemical vapor deposition, wherein the thickness of the SiO 2 layer is 3000-5000 nm and the SiO 2 layer is used as a passivation layer;
step 10, photoetching for five times, corroding the passivation layer to form a pressure welding spot;
Step 11, cleaning the silicon wafer, and performing alloying treatment to form ohmic contact;
Step 12, six times of photoetching, namely BOE etching the oxide layer at the bottom of the substrate silicon (2), and etching the substrate silicon by a deep groove etching technology until the silicon dioxide layer (3) is etched;
Step 13, seven times of photoetching, namely etching the front oxide layer of the device silicon (1) by using a BOE (boron oxide) etching technology, etching the device silicon (1) to the silicon dioxide layer (3), and releasing 8L trabecular structures;
And 14, bonding the SOI sheet and the glass sheet with the overload protection structure by a bonding process, so as to realize the overload protection function.
10. The manufacturing process according to claim 9, wherein,
The device silicon (1) of the SOI sheet is <100> crystal orientation monocrystalline silicon, the conductivity type is n type, and the resistivity of the device silicon (1) of the SOI sheet is 0.01-10Ω & cm;
in the step 3, the thickness of the deposited nc-Si: H (p -) film is 50-120 nm;
In step 5, the high temperature annealing treatment is performed as follows: treating for 20-50 min in a vacuum environment at 600-1200 ℃;
in step 12, the alloying treatment proceeds as follows: treating at 350-500 ℃ for 10-50 min.
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