CN109713103A - A kind of LED chip - Google Patents
A kind of LED chip Download PDFInfo
- Publication number
- CN109713103A CN109713103A CN201811626985.3A CN201811626985A CN109713103A CN 109713103 A CN109713103 A CN 109713103A CN 201811626985 A CN201811626985 A CN 201811626985A CN 109713103 A CN109713103 A CN 109713103A
- Authority
- CN
- China
- Prior art keywords
- layer
- led chip
- gan layers
- gan
- barrier layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 claims abstract description 38
- 239000000463 material Substances 0.000 claims abstract description 35
- 239000000956 alloy Substances 0.000 claims abstract description 13
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 13
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 229910052709 silver Inorganic materials 0.000 claims abstract description 10
- 229910016570 AlCu Inorganic materials 0.000 claims abstract description 7
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 173
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052681 coesite Inorganic materials 0.000 claims description 9
- 229910052906 cristobalite Inorganic materials 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- 229910052682 stishovite Inorganic materials 0.000 claims description 9
- 229910052905 tridymite Inorganic materials 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000011241 protective layer Substances 0.000 claims description 8
- 229910004541 SiN Inorganic materials 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052593 corundum Inorganic materials 0.000 claims description 6
- 238000002161 passivation Methods 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 6
- 238000010276 construction Methods 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910005887 NiSn Inorganic materials 0.000 claims description 3
- 229910008599 TiW Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 6
- 230000008033 biological extinction Effects 0.000 abstract description 4
- 238000002310 reflectometry Methods 0.000 abstract description 3
- 239000010931 gold Substances 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 210000004209 hair Anatomy 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Landscapes
- Led Devices (AREA)
Abstract
The invention discloses a kind of LED chips, comprising: the N-GaN layer that stacks gradually, quantum well layer and P-GaN layers；Reflecting layer is formed on the P-GaN layer；Barrier layer is formed on the reflecting layer, and the barrier layer covers the reflecting layer；The material of the material layer for the part that the barrier layer is in contact with described P-GaN layers is one of Al, Ag, Zn, AlCu alloy or a variety of.The material layer being in contact in barrier layer with P-GaN layer surface and reflection layer surface is substituted for metal layer with high reflectivity by the present invention; barrier layer is set to can be reduced extinction; the effect in original protection reflecting layer is kept again; it realizes the light emission rate for improving LED chip, and then improves the purpose of the LED chip brightness.
Description
Technical field
The present invention relates to LED chip manufacturing field, in particular to a kind of LED chip.
Background technique
It is sequentially formed on the p-GaN layer surface of existing major part GaN base LED chip and plays the role of ohm of Ohmic contact and connect
Contact layer (usually transparency conducting layer), the reflecting layer for playing the role of reflecting mirror and the cladding reflecting layer and transparency conducting layer
Barrier layer.The laminated construction that the barrier layer is made of Ti, Pt, Au and Ti, wherein p-GaN layer surface and reflection layer surface phase
The material layer of contact is Ti layers, and Ti layers are only had 40% or so to the reflectivity of light, are light absorbent.
The study found that the light that GaN material is issued, can be largely reflected into the another side of LED chip, still by reflecting layer
Having small part light can be more than that the Ti material layer of reflecting layer part is absorbed by the barrier layer, influence the final brightness of LED chip.
Summary of the invention
The object of the present invention is to provide a kind of LED chips and preparation method thereof, reduce the extinction on barrier layer as far as possible, and protect
The effect for holding original protection reflecting layer, to improve the light emission rate of LED chip, and then improves the purpose of the LED chip brightness.
In order to achieve the goal above, the invention is realized by the following technical scheme:
A kind of LED chip, comprising: the N-GaN layer that stacks gradually, quantum well layer and P-GaN layers；Reflecting layer is formed in institute
It states on P-GaN layer；Barrier layer is formed on the reflecting layer, and the barrier layer covers the reflecting layer；The barrier layer and institute
The material for stating the material layer for the part that P-GaN layers are in contact is one of Al, Ag, Zn, AlCu alloy or a variety of.
Further, the thickness range of the material layer for the part that the barrier layer is in contact with described P-GaN layers is 0.01 μ
M~100 μm.
Further, the barrier layer further includes the part for being formed in the barrier layer and being in contact with described P-GaN layers
Protective layer in material layer, the material of the protective layer are one of Ti, TiW, Pt, Ni, Au, Cr or a variety of.
Further, the material of the protective layer is one of Al, Ag, Zn, AlCu alloy or a variety of.
Further, the material in the reflecting layer is Ag, Al or Rh.
Further, further includes: groove, the groove through the barrier layer, the metal layer of high reflectance, reflecting layer,
Described P-GaN layers and quantum well layer and described N-GaN layers of exposure；Insulating layer is formed on the side wall of the barrier layer and groove；
Bonded substrate and the bonded layer in the bonded substrate, the bonded layer are filled described recessed towards the insulating layer
Slot with described N-GaN layers to be electrically connected；Passivation layer covers P-GaN layers described, quantum well layer, N-GaN layers of side wall and described
On insulating layer；And P electrode, it is formed in the side of P-GaN layers described, quantum well layer and N-GaN layers, and pass through the barrier layer
It is electrically connected with described P-GaN layers.
Further, further includes: rough surface is formed in the surface for deviating from the quantum well layer described N-GaN layers.
Further, the insulating layer is that one of SiO2, SiN, SiON, Al2O3, TiO2 are formed by single layer knot
Structure, alternatively, being formed by laminated construction for any combination in SiO2, SiN, SiON, Al2O3, TiO2.
Further, the material of the passivation layer is SiO2.
Further, the bonding layer material is Au, Sn, AuSn alloy or NiSn alloy.
The present invention has following technical effect that
The material layer being in contact in barrier layer with P-GaN layer surface and reflection layer surface is substituted for by the present invention has height anti-
The metal layer for penetrating rate makes barrier layer can be reduced extinction, and keeps the effect in original protection reflecting layer, realizes and improves LED core
The light emission rate of piece, and then improve the purpose of the LED chip brightness.Further, roughening treatment is carried out to the undoped layer
To form rough surface, to improve light emission rate.
Detailed description of the invention
Fig. 1 is the partial structure diagram of LED chip provided by the embodiment of the present invention.
Specific embodiment
A kind of LED chip of the invention is described in more detail below in conjunction with schematic diagram, which show this hairs
A bright preferably embodiment, it should be appreciated that those skilled in the art can modify invention described herein and still realize this hair
Bright advantageous effects.Therefore, following description should be understood as the widely known of those skilled in the art, and be not intended as
Limitation of the present invention.
For clarity, not describing whole features of a practical embodiment.In the following description, it is not described in detail well known function
Energy and structure, because they can make the present invention chaotic due to unnecessary details.It will be understood that in any one embodiment of reality
Exploitation in, it is necessary to make a large amount of implementation details to realize the specific objective of developer, such as according to related system or related quotient
The limitation of industry changes into another embodiment by an embodiment.Additionally, it should think that this development may be multiple
It is miscellaneous and time-consuming, but to those skilled in the art it is only routine work.
To be clearer and more comprehensible the purpose of the present invention, feature, a specific embodiment of the invention is made with reference to the accompanying drawing
Further instruction.It should be noted that attached drawing is all made of very simplified form and using non-accurate ratio, only to side
Just, the purpose of one embodiment of the invention is lucidly aided in illustrating.
As shown in Figure 1, a kind of LED chip provided in this embodiment, comprising: the N-GaN layer 100 that stacks gradually, Quantum Well
101 and P-GaN of layer layer 102；Reflecting layer 200 is formed on the P-GaN layer 102；Barrier layer 300 is formed in the reflecting layer
On 200, the barrier layer 200 covers the reflecting layer 200；The material that the barrier layer 300 is in contact with the P-GaN layer 102
The bed of material is metal layer 31 with high reflectivity.The barrier layer 300 further includes the metal layer 31 for being formed in the high reflectance
On protective layer 32, the material of the protective layer 32 is one of Ti, TiW, Pt, Ni, Au, Cr or a variety of or described guarantor
The material of sheath 32 is also possible to one of Al, Ag, Zn, AlCu alloy or a variety of materials with the metal layer of the high reflectance
Expect identical.The material of the metal layer of the high reflectance is one of Al, Ag, Zn, AlCu alloy or a variety of.The high reflection
The thickness range of the metal layer of rate is 0.01 μm~100 μm.The material in the reflecting layer is Ag, Al or Rh.
The LED chip further include: groove (is shown) in figure, and the groove is through the barrier layer, the gold of high reflectance
Belong to layer, reflecting layer, P-GaN layer and the quantum well layer and described N-GaN layers exposed；Insulating layer (is shown) in figure, is formed in institute
On the side wall for stating barrier layer and groove；Bonded substrate (being shown in figure) and the bonded layer in the bonded substrate, it is described
Bonded layer fills the groove towards the insulating layer to be electrically connected with described N-GaN layers；Passivation layer (is shown) in figure,
It covers on P-GaN layers described, quantum well layer, N-GaN layers of side wall and the insulating layer；And P electrode, it is formed in the P-
GaN layer, quantum well layer and N-GaN layers of side, and pass through the barrier layer and described P-GaN layers electric connection.Rough surface (figure
In show), be formed in described N-GaN layers deviate from the quantum well layer surface.The insulating layer be SiO2, SiN, SiON,
One of Al2O3, TiO2 are formed by single layer structure, alternatively, for any group in SiO2, SiN, SiON, Al2O3, TiO2
Conjunction is formed by laminated construction.The material of the passivation layer is SiO2.
The bonding layer material is Au, Sn, AuSn alloy or NiSn alloy.
In conclusion the present invention is replaced by the material layer that the surface p-GaN in barrier layer is in contact with reflection layer surface
The metal layer for changing high reflectance into makes barrier layer can be reduced extinction, and keeps the effect in original protection reflecting layer, and realization mentions
The light emission rate of high LED chip improves the purpose of the LED chip brightness.Further, the undoped layer is carried out at roughening
Reason forms rough surface and can be improved light emission rate.
It is discussed in detail although the contents of the present invention have passed through above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read above content, for of the invention
A variety of modifications and substitutions all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (10)
1. a kind of LED chip characterized by comprising the N-GaN layer that stacks gradually, quantum well layer and P-GaN layers；
Reflecting layer is formed on the P-GaN layer；
Barrier layer is formed on the reflecting layer, and the barrier layer covers the reflecting layer；
The material of the material layer for the part that the barrier layer is in contact with described P-GaN layers is Al, Ag, in Zn, AlCu alloy
It is one or more.
2. LED chip as described in claim 1, which is characterized in that the part that the barrier layer is in contact with described P-GaN layers
Material layer thickness range be 0.01 μm~100 μm.
3. LED chip as claimed in claim 2, which is characterized in that the barrier layer further include be formed in the barrier layer with
Protective layer in the material layer of the part being in contact P-GaN layers of, the material of the protective layer is Ti, TiW, Pt, Ni, Au,
One of Cr or a variety of.
4. LED chip as claimed in claim 3, which is characterized in that the material of the protective layer is Al, Ag, Zn, AlCu alloy
One of or it is a variety of.
5. LED chip as claimed in claim 4, which is characterized in that the material in the reflecting layer is Ag, Al or Rh.
6. LED chip as claimed in claim 5, which is characterized in that further include:
Groove, the groove run through the barrier layer, the metal layer of high reflectance, reflecting layer, P-GaN layers and the quantum well layer
And described N-GaN layers of exposure；
Insulating layer is formed on the side wall of the barrier layer and groove；
Bonded substrate and the bonded layer in the bonded substrate, the bonded layer fill institute towards the insulating layer
Groove is stated to be electrically connected with described N-GaN layers；
Passivation layer covers on P-GaN layers described, quantum well layer, N-GaN layers of side wall and the insulating layer；And
P electrode is formed in the side of P-GaN layers described, quantum well layer and N-GaN layers, and passes through the barrier layer and the P-
GaN layer is electrically connected.
7. LED chip as claimed in claim 6, which is characterized in that further include:
Rough surface is formed in the surface for deviating from the quantum well layer described N-GaN layers.
8. LED chip as claimed in claim 6, which is characterized in that the insulating layer be SiO2, SiN, SiON, Al2O3,
One of TiO2 is formed by single layer structure, alternatively, for any combination institute shape in SiO2, SiN, SiON, Al2O3, TiO2
At laminated construction.
9. LED chip as claimed in claim 6, which is characterized in that the material of the passivation layer is SiO2.
10. LED chip as claimed in claim 6, which is characterized in that the bonding layer material be Au, Sn, AuSn alloy or
NiSn alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811626985.3A CN109713103B (en) | 2018-12-28 | 2018-12-28 | LED chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811626985.3A CN109713103B (en) | 2018-12-28 | 2018-12-28 | LED chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109713103A true CN109713103A (en) | 2019-05-03 |
| CN109713103B CN109713103B (en) | 2021-03-02 |
Family
ID=66259102
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811626985.3A Expired - Fee Related CN109713103B (en) | 2018-12-28 | 2018-12-28 | LED chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109713103B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115579438A (en) * | 2022-12-09 | 2023-01-06 | 江西兆驰半导体有限公司 | LED chip with inverted silver mirror and preparation method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140057968A (en) * | 2012-11-05 | 2014-05-14 | 엘지이노텍 주식회사 | Light emitting device and light emitting array |
| US20160172543A1 (en) * | 2012-12-07 | 2016-06-16 | Epistar Corporation | Light-emitting element |
| CN106848006A (en) * | 2015-12-03 | 2017-06-13 | 映瑞光电科技(上海)有限公司 | Flip LED chips and preparation method thereof |
| CN107195747A (en) * | 2017-06-01 | 2017-09-22 | 华南理工大学 | A kind of micron-scale flip LED chips and preparation method thereof |
| CN107452848A (en) * | 2012-06-28 | 2017-12-08 | 首尔伟傲世有限公司 | Light emitting diode and its manufacture method and the method for manufacturing light-emitting diode (LED) module |
| CN107863434A (en) * | 2017-11-13 | 2018-03-30 | 佛山市国星半导体技术有限公司 | A kind of highlighted flip LED chips with insulation protection structure and preparation method thereof |
| CN108040503A (en) * | 2015-08-24 | 2018-05-15 | Lg伊诺特有限公司 | Light-emitting component and the light-emitting element package with the light-emitting component |
| US20180190872A1 (en) * | 2016-12-30 | 2018-07-05 | Lextar Electronics Corporation | Electrode and photoelectric semiconductor device using the same |
-
2018
- 2018-12-28 CN CN201811626985.3A patent/CN109713103B/en not_active Expired - Fee Related
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107452848A (en) * | 2012-06-28 | 2017-12-08 | 首尔伟傲世有限公司 | Light emitting diode and its manufacture method and the method for manufacturing light-emitting diode (LED) module |
| KR20140057968A (en) * | 2012-11-05 | 2014-05-14 | 엘지이노텍 주식회사 | Light emitting device and light emitting array |
| US20160172543A1 (en) * | 2012-12-07 | 2016-06-16 | Epistar Corporation | Light-emitting element |
| US20170018684A1 (en) * | 2012-12-07 | 2017-01-19 | Epistar Corporation | Light-emitting element |
| CN108040503A (en) * | 2015-08-24 | 2018-05-15 | Lg伊诺特有限公司 | Light-emitting component and the light-emitting element package with the light-emitting component |
| CN106848006A (en) * | 2015-12-03 | 2017-06-13 | 映瑞光电科技(上海)有限公司 | Flip LED chips and preparation method thereof |
| US20180190872A1 (en) * | 2016-12-30 | 2018-07-05 | Lextar Electronics Corporation | Electrode and photoelectric semiconductor device using the same |
| CN107195747A (en) * | 2017-06-01 | 2017-09-22 | 华南理工大学 | A kind of micron-scale flip LED chips and preparation method thereof |
| CN107863434A (en) * | 2017-11-13 | 2018-03-30 | 佛山市国星半导体技术有限公司 | A kind of highlighted flip LED chips with insulation protection structure and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115579438A (en) * | 2022-12-09 | 2023-01-06 | 江西兆驰半导体有限公司 | LED chip with inverted silver mirror and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109713103B (en) | 2021-03-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7007350B2 (en) | Semiconductor light emitting diode having a reflective structure and its manufacturing method | |
| CN104969365B (en) | Semiconductor light emitting element and manufacturing method thereof | |
| JP5793292B2 (en) | Semiconductor light emitting device | |
| US9123864B2 (en) | Semiconductor light-emitting element | |
| US12080827B2 (en) | Radiation-emitting semiconductor chip | |
| US20190305189A1 (en) | Leds with efficient electrode structures | |
| US8860062B2 (en) | Optoelectronic semiconductor component | |
| US10074767B2 (en) | Light-emitting element | |
| US9466768B2 (en) | Semiconductor light emitting device with a light-reflecting face | |
| JP6558654B2 (en) | Optoelectronic semiconductor chip, optoelectronic semiconductor component, and production method of optoelectronic semiconductor chip | |
| CN103975451A (en) | Method for manufacturing semiconductor light-emitting element | |
| JP3847477B2 (en) | Group III nitride compound semiconductor light emitting device | |
| TW201005987A (en) | Light emitting device and fabrication thereof | |
| KR20130052002A (en) | Method for manufacturing group iii nitride semiconductor light emitting element | |
| CN108475715A (en) | Semiconductor light-emitting elements | |
| CN109713089A (en) | GaN base LED white light thin-film LED and preparation method thereof | |
| JP5608340B2 (en) | Semiconductor light emitting device | |
| CN109713103A (en) | A kind of LED chip | |
| CN116207203B (en) | A light-emitting diode chip | |
| KR101928309B1 (en) | Semiconductor light emitting device manufacturing method | |
| JP2019067841A (en) | Semiconductor light-emitting element and light-emitting device | |
| JP2009200254A (en) | Semiconductor light emitting element | |
| JP5626019B2 (en) | Light emitting device | |
| CN109585429A (en) | Light source module | |
| JP6940739B2 (en) | Light emitting element and manufacturing method of light emitting element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20210302 Termination date: 20211228 |