CN109713099A

CN109713099A - A kind of graphical sapphire substrate structure and its manufacture craft

Info

Publication number: CN109713099A
Application number: CN201811611738.6A
Authority: CN
Inventors: 冯磊; 徐平; 王杰; 陈欢
Original assignee: Xiangneng Hualei Optoelectrical Co Ltd
Current assignee: Xiangneng Hualei Optoelectrical Co Ltd
Priority date: 2018-12-27
Filing date: 2018-12-27
Publication date: 2019-05-03
Anticipated expiration: 2038-12-27
Also published as: CN109713099B

Abstract

The invention provides a patterned sapphire substrate structure, comprising a sapphire substrate, an aluminum nitride film layer and an aluminum oxide nano-microstructure; an aluminum nitride film layer, an aluminum oxide dielectric layer and a mask are designed on the upper surface of the sapphire substrate The multi-layer structure of the film pattern layer realizes pattern transfer through the nano-imprint technology, and selectively etches the mask pattern layer and the aluminum oxide dielectric layer by the dry etching process, and etches the required pattern depth and shape. The aluminum nitride film is exposed between the aluminum oxide nano-microstructures, forming a patterned sapphire substrate with aluminum oxide nano-microstructures; the patterned sapphire substrate with aluminum oxide nano-microstructures not only retains the three-dimensional growth in epitaxial growth Advantages, and take advantage of the close lattice coefficients of aluminum nitride and GaN materials, further improving the quality of GaN growth and the luminous efficiency of LEDs.

Description

A kind of graphical sapphire substrate structure and its manufacture craft

Technical field

The present invention relates to field of semiconductor manufacture, particularly, are related to a kind of graphical sapphire substrate structure and its production Technique.

Background technique

LED is a kind of semiconducting solid luminescent device, specific energy conservation, service life length, high luminous efficiency and other features, and is being produced Be not related to the harmful substances such as mercury in use process, waste and old lamps and lanterns pollution on the environment can be greatly decreased, be green light source. And in LED component, Sapphire Substrate is LED semiconductor using most wide substrate material, and using sapphire as the technology of substrate In route, in order to improve GaN epitaxy quality and improve semiconductor lighting devices output power, a micron pattern is generallyd use at present Change Sapphire Substrate technology, the bullet of periodic arrangement is produced by the sapphire substrate surface in extension, utilizes indigo plant The high characteristic of the upper conical inclined-plane potential energy of jewel patterned substrate, control epitaxial growth parameters grow the GaN of better quality；With receiving The rise of rice stamping technique, when patterned sapphire substrate upgrades to nanoscale, the optical output power of LED component can be mentioned Height, although the Sapphire Substrate of nano-patterning is with the obvious advantage in luminous intensity, in GaN epitaxy growth course exist compared with More growth cavities, influence GaN epitaxial film quality, are unfavorable for application of the LED component under current state.Therefore, anxious in the industry It needs a kind of in the upper new technique for preferably improving epitaxial growth quality and luminous efficiency of Sapphire Substrate processing.

Summary of the invention

It is an object of that present invention to provide a kind of graphical sapphire substrate structure and its manufacture crafts, to solve background technique The problem of.

To achieve the above object, the present invention provides a kind of graphical sapphire substrate structures, including Sapphire Substrate, nitrogen Change aluminum film layer and aluminium oxide nano micro-structure；The aluminum nitride thin film layer is arranged on a sapphire substrate, and aluminium nitride film Layer is equipped with aluminium oxide nano micro-structure.

Preferably, the aluminum nitride thin film layer with a thickness of 20-200nm.

Preferably, the aluminium oxide nano micro-structure in the aluminum nitride thin film layer equidistantly arranges.

Preferably, the shape of the aluminium oxide nano micro-structure includes cylindrical, rectangular and zigzag.

A kind of manufacture craft of graphical sapphire substrate structure, comprising the following steps:

1) one layer of aluminium nitride film is sputtered on clean sapphire plane substrate；

2) one layer of alumina medium layer is deposited in aluminum nitride thin film layer；The alumina medium layer with a thickness of 100- 1000nm。

3) one layer of nano impression glue of spin coating on alumina medium layer, through nano-imprint process on alumina medium layer Form mask pattern layer；

4) dry method etch technology, selective etch mask pattern layer and alumina medium layer are used, and then in aluminum nitride thin Aluminium oxide nano micro-structure is etched on film layer interface, that is, the graphical sapphire substrate with aluminium oxide nano micro-structure is made Structure.

Preferably, the method for the aluminum nitride thin film layer sputtered in the step 1) is physical vaporous deposition.

Preferably, deposition of aluminium oxide dielectric layer in the step 2) specifically: using the technology of atomic layer deposition, in temperature For 120 DEG C -180 DEG C and N₂Under conditions of atmosphere, reaction is carried out using trimethyl aluminium and deionized water and generates unformed oxidation Aluminium medium crystallizing layer；Unformed alumina medium crystallizing layer crystallizes alumina layer by high-temperature heat treatment.

Preferably, the high-temperature heat treatment specifically: the Sapphire Substrate for generating unformed alumina crystal is put into heat High-temperature heat treatment is carried out in processing equipment, heat treatment temperature is 1400-1600 DEG C；Heat treatment time is 1-3H；It is heat-treated atmosphere For nitrogen.

Preferably, the aluminium oxide nano micro-structure is cylinder, wherein a height of 100- of aluminium oxide nano micro-structure 1000nm, diameter 100-500nm；And the inter-pattern space distance between aluminium oxide nano micro-structure is 100-1000nm.

The invention has the following advantages:

The present invention provides a kind of graphical sapphire substrate structures, including Sapphire Substrate, aluminum nitride thin film layer and oxygen Change aluminium nano-micro structure；The graphical sapphire substrate of this aluminium oxide nano micro-structure is effectively played three in epitaxial growth The advantage of growth is tieed up, the presence of three dimensional growth can largely reduce the generation of dislocation, and the source of dislocation is mainly at the beginning of GaN film Phase causes the dislocation density of the GaN finally grown up to reduce, and improves the quality of GaN, simultaneous oxidation aluminium nano-micro structure is not by nitrogen Change aluminum film layer cladding, has greatly played aluminium nitride and the close advantage of GaN material lattice coefficient, compensated for outside initial stage GaN Prolong the situation for growing cavity in growth course, further improves the quality of GaN growth and the luminous efficiency of LED；GaN exists simultaneously The potential energy for aoxidizing aluminium surface is relatively high, and when GaN growth is not easy in oxidation aluminium surface deposition, it is ensured that GaN growth it is smooth Degree is high.

The present invention provides a kind of manufacture crafts of graphical sapphire substrate structure, pass through the method for physical vapour deposition (PVD) Surface sputters aluminum nitride thin film layer on a sapphire substrate, deposits oxygen in aluminum nitride thin film layer using the method for atomic layer deposition Change aluminium dielectric layer, and be coated with one layer of nano impression glue on alumina medium layer, pattern is realized by nano-imprint process technology Transfer, with dry etching process selective etch mask pattern layer and alumina medium layer, etches the graphics depth and shape of needs Looks, and expose aluminium nitride film between patterned aluminium oxide nano micro-structure, form the figure with aluminium oxide nano micro-structure Shape Sapphire Substrate；The manufacture craft of one of present invention graphical sapphire substrate structure is simple, and the figure made Change Sapphire Substrate architecture quality is good and luminous efficiency is high；It is very suitable to large batch of graphical sapphire substrate structure system Make, and the nano-micro structure of various shapes can be produced according to actual needs, it is practical.

Other than objects, features and advantages described above, there are also other objects, features and advantages by the present invention. Below with reference to figure, the present invention is described in further detail.

Detailed description of the invention

The attached drawing constituted part of this application is used to provide further understanding of the present invention, schematic reality of the invention It applies example and its explanation is used to explain the present invention, do not constitute improper limitations of the present invention.In the accompanying drawings:

Fig. 1 is to prepare a micron Principle of Process schematic diagram of patterned substrate structure A in the prior art；

Fig. 2 is the Principle of Process schematic diagram that nano-patterned substrate structure C is prepared in comparative example 2；

Fig. 3 is a kind of fabrication processing figure of graphical sapphire substrate structure D in the embodiment of the present invention；

Fig. 4 is the Principle of Process schematic diagram that graphical sapphire substrate structure D is prepared in the embodiment of the present invention；

Wherein, 301, Sapphire Substrate, 302, aluminum nitride thin film layer, 303, alumina medium layer, 304, mask pattern layer, 305, sapphire nano-micro structure, 306, aluminium oxide nano micro-structure.

Specific embodiment

The embodiment of the present invention is described in detail below in conjunction with attached drawing, but the present invention can be limited according to claim Fixed and covering multitude of different ways is implemented.

Embodiment 1:

Referring to Fig. 3 to Fig. 4, a kind of graphical sapphire substrate structure is provided in the present embodiment, including Sapphire Substrate, Aluminum nitride thin film layer and aluminium oxide nano micro-structure；The aluminum nitride thin film layer is arranged on a sapphire substrate, and aluminum nitride thin Film layer is equipped with aluminium oxide nano micro-structure.

The aluminum nitride thin film layer with a thickness of 20-200nm.

Aluminium oxide nano micro-structure in the aluminum nitride thin film layer equidistantly arranges.

The shape of the aluminium oxide nano micro-structure includes cylindrical, rectangular and zigzag.

1) method of physical vapour deposition (PVD) is used to sputter a layer thickness on clean sapphire plane substrate as 20- The aluminium nitride film of 200nm, the specific equipment used is PVD vacuum coating equipment, and when plated film, PVD vacuum coating equipment splashes Penetrating power is 2000-3000W, and sputtering target material temperature is 400-600 DEG C.

2) the alumina medium layer of one layer of 100-1000nm is deposited in aluminum nitride thin film layer；Specifically: utilize atomic layer The technology of deposition is 120 DEG C -180 DEG C and N in temperature₂Under conditions of atmosphere, carried out using trimethyl aluminium and deionized water anti- Unformed alumina medium crystallizing layer should be generated；The Sapphire Substrate for generating unformed alumina medium crystallizing layer is put into simultaneously High-temperature heat treatment is carried out in Equipment for Heating Processing into the alumina medium layer of crystallization；Heat treatment temperature is 1400-1600 DEG C, at heat The reason time is 1-3H.

3) one layer of nano impression glue of spin coating on alumina medium layer, through nano-imprint process on alumina medium layer Form mask pattern layer；The mask pattern layer with a thickness of 100-200nm.

4) dry method etch technology is used, by ICP etching machine selective etch mask pattern layer and alumina medium layer, into And a height of 100-1000nm equidistantly arranged and diameter are etched on aluminium nitride film bed boundary as the oxidation of 100-500nm Aluminium nano-micro structure, and the spacing between aluminium oxide nano micro-structure is 100-1000nm (between aluminium oxide nano micro-structure Inter-pattern space distance is 100-1000nm)；The graphical sapphire substrate structure D with aluminium oxide nano micro-structure is made.

In a kind of graphical sapphire substrate structure D of the present embodiment production, aluminum nitride thin film layer is 100nm；Exposure mask Graph layer with a thickness of 100nm；A height of 300nm of aluminium oxide nano micro-structure, diameter 300nm, and the micro- knot of aluminium oxide nano Spacing between structure is 500nm.

A kind of manufacture craft of graphical sapphire substrate structure, is existed by the method for physical vapour deposition (PVD) in the present embodiment Sapphire Substrate upper surface sputter aluminum nitride thin film layer, using the method for atomic layer deposition in aluminum nitride thin film layer deposited oxide Aluminium dielectric layer, and one layer of nano impression glue is coated on alumina medium layer, realize that pattern turns by nano-imprint process technology It moves, with dry etching process selective etch mask pattern layer and alumina medium layer, etches the graphics depth and pattern of needs, And expose aluminium nitride film between patterned aluminium oxide nano micro-structure, being formed has the graphical of aluminium oxide nano micro-structure Sapphire Substrate；The manufacture craft of one of present invention graphical sapphire substrate structure is simple, and the graphical indigo plant made Jewel substrat structure is high-quality and luminous efficiency is high；It is very suitable to large batch of graphical sapphire substrate structure fabrication, and The nano-micro structure of various shapes can be produced according to actual needs, it is practical.

The graphical sapphire substrate D with aluminium oxide nano micro-structure in the present embodiment, that is, remain in LED extension Three dimensional growth advantage in growth, and aluminium nitride and the close feature of GaN material lattice coefficient have been played, it is raw that GaN can be effectively improved The luminous efficiency of long quality and LED.

Comparative example 1:

Referring to Fig. 1, this comparative example is with embodiment difference: comparative example 1 forms mask pattern on a sapphire substrate Layer, by dry method etch technology selective etch mask pattern layer and Sapphire Substrate, directly etches on a sapphire substrate The micrometer structure of periodic arrangement (equidistant arrangement), forms micron-sized graphical sapphire substrate structure A.

Comparative example 2:

Referring to Fig. 1, this comparison column are with embodiment 1 with point: comparative example 2 is served as a contrast referring to the basis of comparative example 1 in sapphire Mask pattern layer is formed on bottom, it is precious by nano-imprint process and dry method etch technology selective etch mask pattern layer and indigo plant Stone lining bottom directly etches the nano-micro structure of periodic arrangement on a sapphire substrate, forms graphical sapphire substrate knot Structure B.

Comparative example 3:

Referring to fig. 2, this comparison column are with embodiment 1 with point: comparative example 3 is being formed with nanometer with the basis of comparative example 2 One layer of aluminium nitride film is sputtered on the graphical sapphire substrate of micro-structure, forms graphical sapphire substrate structure C.

The performance comparison table of table 1 embodiment 1 and the resulting graphical sapphire substrate structure of comparative example 1-2

As known from Table 1:

In conjunction with case 1 compared with comparative example 1-3, technical solution of the present invention effect is substantially better than the prior art:

A kind of LED epitaxial quality that graphical sapphire substrate structure is grown of the present invention and LED luminous efficiency are obviously high In comparative example.

In four kinds of graphical sapphire substrate structures, the epitaxial crystallization of the substrate D growth of the present embodiment is best in quality；Substrate In structure A and substrat structure B, although can be by carrying out three using the high characteristic of the upper conical inclined-plane potential energy of patterned sapphire substrate Dimension growth, but there is a situation where growth cavity in GaN epitaxy growth course, GaN epitaxial film quality is influenced, LED is unfavorable for Application of the device under current state improves LED luminous efficiency；Aluminium nitride film is increased in the present embodiment substrat structure D, And be etched on aluminium nitride film not by aluminium nitride film coated aluminum oxide nano-micro structure, greatly played aluminium nitride and The close advantage of GaN material lattice coefficient compensates for the situation that cavity is grown in initial stage GaN epitaxy growth course, simultaneous oxidation Three dimensional growth on aluminium nano-micro structure can remain, and the presence of three dimensional growth can largely reduce the generation of dislocation, and Dislocation source mainly at GaN initial stage, reduces the dislocation density of GaN primary growth, improves LED luminous efficiency；GaN exists simultaneously The potential energy for aoxidizing aluminium surface is relatively high, and when GaN growth is not easy in oxidation aluminium surface deposition, it is ensured that GaN growth it is smooth Degree is high；Whole surface in substrat structure C due to patterned substrate is all deposited with aluminium nitride film, and GaN is in aluminium nitride film table Growth is exactly simple two dimension accumulation on face, without three dimensional growth, increases the generation of dislocation density, and GaN in two-dimensional growth The growth characteristics of direction selection are destroyed, and are easy by flow field airflow influence on special aluminium nitride film, the surface GaN of formation is also compared It is coarse.

The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.

Claims

1. a patterned sapphire substrate structure, is characterized in that, comprises sapphire substrate, aluminum nitride film layer and aluminum oxide nano-microstructure; Described aluminum nitride film layer is arranged on the sapphire substrate, and aluminum nitride film Alumina nanostructures are arranged on the thin film layer.

2 . The patterned sapphire substrate structure according to claim 1 , wherein the thickness of the aluminum nitride thin film layer is 20-200 nm. 3 .

3 . The patterned sapphire substrate structure according to claim 1 , wherein the aluminum oxide nanostructures on the aluminum nitride film layer are arranged at equal intervals. 4 .

4 . The patterned sapphire substrate structure according to claim 1 , wherein the shape of the alumina nano-microstructures includes cylindrical, square and zigzag. 5 .

5. A fabrication process of the patterned sapphire substrate structure according to any one of claims 1-4, characterized in that, comprising the following steps:

1) Sputtering a layer of aluminum nitride film on a clean sapphire planar substrate;

2) depositing an aluminum oxide dielectric layer on the aluminum nitride film layer;

3) spin coating a layer of nano-imprint glue on the alumina dielectric layer, and form a mask pattern layer on the alumina dielectric layer through a nano-imprint process;

4) Using a dry etching process, the mask pattern layer and the aluminum oxide dielectric layer are selectively etched, and then the aluminum oxide nano-microstructure is etched on the interface of the aluminum nitride film layer, that is, the aluminum oxide nano-microstructure is made. Patterned sapphire substrate structure.

6 . The manufacturing process of a patterned sapphire substrate structure according to claim 5 , wherein the method for sputtering the aluminum nitride thin film layer in the step 1) is a physical vapor deposition method. 7 .

7 . The fabrication process of a patterned sapphire substrate structure according to claim 5 , wherein the deposition of the aluminum oxide dielectric layer in the step 2) is as follows: at a temperature of 120° C.-180° C. and N ₂ Under the condition of the atmosphere, trimethyl aluminum and deionized water are used to react to form an amorphous alumina dielectric crystal layer; the amorphous aluminum oxide dielectric crystal layer is crystallized by high temperature heat treatment.

8 . The manufacturing process of a patterned sapphire substrate structure according to claim 7 , wherein the high temperature heat treatment is specifically: placing the sapphire substrate that generates amorphous alumina crystals into a heat treatment equipment for high temperature treatment. 9 . Heat treatment, the heat treatment temperature is 1400-1600 ℃; the heat treatment time is 1-3H.

9 . The manufacturing process of a patterned sapphire substrate structure according to claim 8 , wherein the alumina nano-microstructure is cylindrical, wherein the height of the alumina nano-structure is 100-1000 nm, 10 . The diameter is 100-500 nm; and the pattern gap distance between the alumina nanostructures is 100-1000 nm.