CN109702910B - Ultra-precise semiconductor material for electronics and communication industries - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 238000004891 communication Methods 0.000 title claims abstract description 12
- 238000005498 polishing Methods 0.000 claims abstract description 54
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 31
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Abstract
The invention relates to an ultra-precise semiconductor material used in the electronic and communication industries, the preparation process of the ultra-precise semiconductor material comprises the following steps: (1) firstly, cutting a semiconductor material into a wafer by utilizing cutting equipment; (2) fixing the wafer to a support with an adhesive; (3) grinding the wafer fixed on the support on a grinder; (4) polishing the wafer fixed on the support; (5) and carrying out surface cleaning treatment on the polished wafer. The ultra-precise semiconductor material has lower roughness and higher processing quality, can avoid the risk of wafer damage, is suitable for epitaxial growth, and can be widely applied to the industries of electronics, communication, energy and the like.
Description
Technical Field
The present invention relates to an ultra-precise semiconductor material used in the electronic and communication industries.
Background
At present, the artificial crystal material is widely applied to the fields of industry, medical treatment, national defense, aerospace, scientific research and the like along with the rapid development of the photoelectric technology, and the material characteristics of the artificial crystal material, such as the organization structure, the electrical characteristics, the optical characteristics and the like, can be generally changed in the application due to different use fields and the length of the use time, and finally can cause great adverse effects on the service life and the functional characteristics of components.
With the continuous development of scientific technology, the requirements of window materials on functions such as photoelectric characteristics and the like are gradually improved, and the requirements of people on the window materials tend to be multifunctional, intelligent and high-speed, so that the requirements on the performance of optical window materials are higher and higher, and the performance of optical glass windows in the traditional sense cannot reach the existing practical application standard. Sapphire (alpha-Al)2O3) The single crystal has excellent electrical insulation, light transmission, chemical inertness, wear resistance, high hardness, high melting point (2040 ℃) and other unique excellent material properties, so that the single crystal can be widely applied to optical windows in the fields of aerospace, microelectronics, photoelectron industry and the like as an optical material, particularly sapphire glass has the advantages of extremely high hardness, structural strength, wear resistance, low material specific gravity and the like, and has great advantages in the aspects of weight reduction in the military industry and aerospace industry. In addition, the application of sapphire to some civilian window members such as high-end mobile phone windows, camera lenses, scanners, projector protection prisms, etc. is also expanding.
However, when the sapphire wafer is used as a substrate material, a window material, or other ultra-precise surface components having a high requirement for surface quality, the surface quality thereof has a great influence on functional characteristics and optical characteristics thereof, and thus has a very high requirement for the surface quality of a sapphire single crystal in practical applications. For example, in the military industry or aerospace field, sapphire wafers are sometimes used as window materials in harsh working environments, and the quality of the surface quality of the sapphire wafers is directly related to the integrity and accuracy of detection information; in the civil field, the sapphire wafer can be used as a window material to replace various surface mirrors and panels, for example, a common apple mobile phone adopts sapphire single crystal as a Home key, a volume key, a front camera and a rear camera, and the like, and the sapphire wafer is required to have high surface flatness and small subsurface damage in the applications, and the processing requirement of global planarization is also required. However, because sapphire crystals have the characteristics of high hardness, large brittleness, stable chemical properties and the like, the sapphire crystals are difficult to grind and polish, have long processing time, and are easy to crush, edge breakage and the like in the processing process. Therefore, the method has important scientific significance and application prospect in efficiently processing the ultra-smooth sapphire wafer without subsurface damage.
The sapphire single crystal has excellent physical and mechanical properties, theoretically, the material use characteristics of the sapphire single crystal are in the optimal state when no impurity is doped, and the density value of the sapphire single crystal is 3.987g/cm3However, in real life there is no single crystal sapphire of one hundred percent purity, which has a density of about 3.95g/cm in the presence of some impurities3～4.10g/cm3In general, when the density value exceeds the range in the actual weighing calculation, it indicates that the sapphire single crystal has internal damage and defects such as micropores, gaps, and microcracks. Because the sapphire single crystal has anisotropy, different crystal orientation structures are obtained when the sapphire single crystal is cut in different directions according to the crystal lattice type of the sapphire single crystal, and the sapphire single crystal can be divided into A-direction sapphire, C-direction sapphire and R-direction sapphire respectively, wherein the physical and chemical properties of the sapphire in different crystal orientations are greatly different, and the functions are different. Growing a semiconductor material on the C-direction sapphire mainly serving as a substrate; the A-direction sapphire is applied to window materials due to excellent optical performance and high insulation, and is mainly used for window materials in the fields of aerospace, military industry and the like at present; while R-oriented sapphire is mainly used in microelectronic integrated circuits. The mechanical property of the single crystal sapphire changes correspondingly along with the change of the temperature, and particularly under the condition of higher temperature, the mechanical property of the sapphire is rapidly reducedLike this, the elastic modulus of the material generally decreases steadily with increasing temperature. The good thermal property is an important reason that the sapphire single crystal is superior to other window substrate materials and is widely applied, the main thermal property of the sapphire single crystal is closely related to the thermal vibration of the crystal orientation in the structure of the sapphire single crystal, and the light damage resistance threshold of the sapphire is generally increased along with the increase of specific heat. Generally, the thermal conductivity and the thermal expansion rate of a sapphire single crystal are main indexes for evaluating the cooling efficiency, and the rapid heat dissipation of the crystal is realized by cooling the surface of the crystal.
In order to improve the material removal rate and the surface quality of the single crystal sapphire, different energy field forms such as mechanical energy, chemical energy, composite energy, special energy fields and the like are relied on by various polishing technologies. At present, the ultra-precision processing method for sapphire at home and abroad mainly comprises chemical mechanical polishing, ion beam polishing, float polishing, magneto-rheological polishing, laser polishing and the like. At present, many methods are used for polishing sapphire single crystals, however, different polishing processes have respective defects, the surface of a polished part can be precisely processed by pure mechanical grinding and polishing to meet the global planarization requirement, and when crystal surface materials, particularly crystals with high hardness, are removed only by abrasive particles, the polishing efficiency is extremely low, and scratches are easily formed on the surface. Chemical polishing can improve the surface processing efficiency of a polished wafer, but the limit of its own processing conditions makes it difficult to achieve the effect of global planarization of the surface of the polished wafer, and since the chemical action is strong, pitting corrosion is likely to occur on the surface, and haze is formed. The current newer polishing technologies such as laser beam and ion beam polishing are not only difficult to achieve global planarization of the polished sample, but also the application of the polishing sample is not promoted due to the immaturity of the technology. Chemical mechanical polishing is used as a polishing technology for global planarization, can obtain a good polishing effect, obtains an ultra-smooth surface, and is applied to polishing of a plurality of materials.
However, how to further improve the material removal rate and surface quality of single crystal sapphire has been the focus of research and development in this field.
Disclosure of Invention
In order to solve the technical problem that the material removal rate and the surface quality of sapphire in the prior art need to be further improved, the invention provides the following technical scheme:
an ultra-precise semiconductor material used in the electronic and communication industries is prepared by the following steps:
(1) firstly, cutting a semiconductor material into a wafer with the thickness of 100-200 mu m by using cutting equipment;
(2) securing the wafer to a support with an adhesive, wherein the support is a rigid plate;
(3) grinding the wafer fixed on the support on a grinder;
(4) polishing the wafer fixed on the support;
(5) and carrying out surface cleaning treatment on the polished wafer.
The surface cleaning treatment comprises the steps of sequentially using a dewaxing cleaning agent, acetone, absolute ethyl alcohol and deionized water for ultrasonic cleaning, and then drying the sample by using cold air.
Wherein, the basic parameters of the polishing treatment are as follows: the pressure is 300 g/square centimeter, the upper disc rotating speed is 60rpm/min, the lower disc rotating speed is 140rpm/min, the polishing liquid flow rate is 70ml/min, the temperature is 25 ℃, and the polishing time is 2 hours.
The polishing solution for polishing treatment comprises the following components: 2 to 4 weight percent of silicon oxide particles with the particle size of 6 to 10nm, 20 to 30 weight percent of silicon oxide particles with the particle size of 30 to 80nm, 6 to 8 weight percent of silicon oxide particles with the particle size of 120 to 140nm, 0.1 weight percent of surfactant, 1 weight percent of sodium sulfate, sodium hydroxide and the balance of water. The pH of the polishing solution is 9.5-10.5.
Wherein the surfactant is formed by compounding acrylic acid-acrylate-sulfonate copolymer and beta-naphthol polyoxyethylene ether according to the mass ratio of 1: 1.
Preferably, the semiconductor material is sapphire.
The technical scheme of the invention has the following beneficial effects:
(1) the combination of 2 to 4 weight percent of silicon oxide particles with the particle size of 6 to 10nm, 20 to 30 weight percent of silicon oxide particles with the particle size of 30 to 80nm, and 6 to 8 weight percent of silicon oxide particles with the particle size of 120 to 140nm, and a surfactant with the mass ratio of 1:1 of acrylic acid-acrylate-sulfonate copolymer to beta-naphthol polyoxyethylene ether can improve the removal rate of sapphire and reduce the roughness of the surface of a wafer.
(2) The ultra-precise semiconductor material has lower roughness and higher processing quality, can avoid the risk of wafer damage, is suitable for epitaxial growth, and can be widely applied to the industries of electronics, communication, energy and the like.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be further described in detail with reference to the following examples and comparative examples.
Example 1
An ultra-precise semiconductor material used in the electronic and communication industries is prepared by the following steps:
(1) firstly, cutting a semiconductor material into a wafer with the thickness of 100-200 mu m by using cutting equipment;
(2) securing the wafer to a support with an adhesive, wherein the support is a rigid plate;
(3) grinding the wafer fixed on the support on a grinder;
(4) polishing the wafer fixed on the support;
(5) and carrying out surface cleaning treatment on the polished wafer.
The surface cleaning treatment comprises the steps of sequentially using a dewaxing cleaning agent, acetone, absolute ethyl alcohol and deionized water for ultrasonic cleaning, and then drying the sample by using cold air.
Wherein, the basic parameters of the polishing treatment are as follows: the pressure is 300 g/square centimeter, the upper disc rotating speed is 60rpm/min, the lower disc rotating speed is 140rpm/min, the polishing liquid flow rate is 70ml/min, the temperature is 25 ℃, and the polishing time is 2 hours.
The polishing solution for polishing treatment comprises the following components: 3 wt% of silica particles with a particle size of 8nm, 25 wt% of silica particles with a particle size of 50nm, 7 wt% of silica particles with a particle size of 130nm, 0.1 wt% of surfactant, 1 wt% of sodium sulfate, sodium hydroxide, and the balance of water. The pH of the polishing solution was 9.9.
Wherein the surfactant is formed by compounding acrylic acid-acrylate-sulfonate copolymer and beta-naphthol polyoxyethylene ether according to the mass ratio of 1: 1.
Wherein the semiconductor material is sapphire.
Example 2
An ultra-precise semiconductor material used in the electronic and communication industries is prepared by the following steps:
(1) firstly, cutting a semiconductor material into a wafer with the thickness of 100-200 mu m by using cutting equipment;
(2) securing the wafer to a support with an adhesive, wherein the support is a rigid plate;
(3) grinding the wafer fixed on the support on a grinder;
(4) polishing the wafer fixed on the support;
(5) and carrying out surface cleaning treatment on the polished wafer.
The surface cleaning treatment comprises the steps of sequentially using a dewaxing cleaning agent, acetone, absolute ethyl alcohol and deionized water for ultrasonic cleaning, and then drying the sample by using cold air.
Wherein, the basic parameters of the polishing treatment are as follows: the pressure is 300 g/square centimeter, the upper disc rotating speed is 60rpm/min, the lower disc rotating speed is 140rpm/min, the polishing liquid flow rate is 70ml/min, the temperature is 25 ℃, and the polishing time is 2 hours.
The polishing solution for polishing treatment comprises the following components: 2 wt% of silicon oxide particles with the particle size of 6nm, 20 wt% of silicon oxide particles with the particle size of 30nm, 6 wt% of silicon oxide particles with the particle size of 120nm, 0.1 wt% of surfactant, 1 wt% of sodium sulfate, sodium hydroxide and the balance of water. The pH of the polishing solution was 9.5.
Wherein the surfactant is formed by compounding acrylic acid-acrylate-sulfonate copolymer and beta-naphthol polyoxyethylene ether according to the mass ratio of 1: 1.
Wherein the semiconductor material is sapphire.
Example 3
An ultra-precise semiconductor material used in the electronic and communication industries is prepared by the following steps:
(1) firstly, cutting a semiconductor material into a wafer with the thickness of 100-200 mu m by using cutting equipment;
(2) securing the wafer to a support with an adhesive, wherein the support is a rigid plate;
(3) grinding the wafer fixed on the support on a grinder;
(4) polishing the wafer fixed on the support;
(5) and carrying out surface cleaning treatment on the polished wafer.
The surface cleaning treatment comprises the steps of sequentially using a dewaxing cleaning agent, acetone, absolute ethyl alcohol and deionized water for ultrasonic cleaning, and then drying the sample by using cold air.
Wherein, the basic parameters of the polishing treatment are as follows: the pressure is 300 g/square centimeter, the upper disc rotating speed is 60rpm/min, the lower disc rotating speed is 140rpm/min, the polishing liquid flow rate is 70ml/min, the temperature is 25 ℃, and the polishing time is 2 hours.
The polishing solution for polishing treatment comprises the following components: 4 wt% of silica particles with a particle size of 10nm, 30 wt% of silica particles with a particle size of 80nm, 8 wt% of silica particles with a particle size of 140nm, 0.1 wt% of surfactant, 1 wt% of sodium sulfate, sodium hydroxide, and the balance of water. The pH of the polishing solution is 9.5-10.5.
Wherein the surfactant is formed by compounding acrylic acid-acrylate-sulfonate copolymer and beta-naphthol polyoxyethylene ether according to the mass ratio of 1: 1.
Wherein the semiconductor material is sapphire.
Comparative examples 1 to 5
Comparative example 1
Comparative example 1 the same as example 1 except that 7 wt% of silica particles having a particle size of 130nm were not added and the surfactant was sodium polyacrylate.
Comparative example 2
Comparative example 1 was the same as example 1 except that 7 wt% of silica particles having a particle size of 130nm was not added, and 7 wt% of silica particles having a particle size of 100nm was added.
Comparative example 3
Comparative example 3 was the same as example 1 except that 7 wt% of silica particles having a particle size of 130nm was not added, but 7 wt% of silica particles having a particle size of 160nm was added.
Comparative example 4
The surfactant in comparative example 4 was an acrylic acid-acrylate-sulfonate copolymer.
Comparative example 5
The surfactant in comparative example 5 was beta-naphthol polyoxyethylene ether.
The following table details the composition of the large particle silica and the surfactant in examples 1 to 3 and comparative examples 1 to 5.
To verify the removal rate and surface quality of examples 1 to 3 and comparative examples 1 to 5, the removal rate was calculated by measuring the weight difference before and after polishing with a balance, and the surface roughness Ra was characterized with an atomic force microscope, and the results were as follows:
| numbering | Removal rate μm/h | Surface roughness Ra (nm) |
| Example 1 | 8.5 | 0.0543 |
| Example 2 | 8.4 | 0.0536 |
| Example 3 | 8.7 | 0.0551 |
| Comparative example 1 | 7.2 | 0.0672 |
| Comparative example 2 | 7.9 | 0.0726 |
| Comparative example 3 | 8.2 | 0.0765 |
| Comparative example 4 | 7.4 | 0.0618 |
| Comparative example 5 | 7.5 | 0.0614 |
The results show that (1) on the basis of 2 to 4 weight percent of silicon oxide particles with the particle size of 6 to 10nm and 20 to 30 weight percent of silicon oxide particles with the particle size of 30 to 80nm, the removal rate can be improved by further adding 6 to 8 weight percent of silicon oxide particles with the particle size of 120 to 140nm, but the roughness of the surface can be improved; (2) compared with the traditional surfactant (such as polycarboxylate and the like), the surfactant with the mass ratio of the acrylic acid-acrylate-sulfonate copolymer to the beta-naphthol polyoxyethylene ether being 1:1 can promote the dispersion of polishing particles and further reduce the surface roughness. (3) The combination of 2 to 4 weight percent of silicon oxide particles with the particle size of 6 to 10nm, 20 to 30 weight percent of silicon oxide particles with the particle size of 30 to 80nm, and 6 to 8 weight percent of silicon oxide particles with the particle size of 120 to 140nm, and a surfactant with the mass ratio of 1:1 of acrylic acid-acrylate-sulfonate copolymer to beta-naphthol polyoxyethylene ether can improve the removal rate of sapphire and reduce the roughness of the surface of a wafer. (4) The ultra-precise semiconductor material has lower roughness and higher processing quality, can avoid the risk of wafer damage, is suitable for epitaxial growth, and can be widely applied to the industries of electronics, communication, energy and the like.
Claims (2)
1. An ultra-precise semiconductor material used in the electronic and communication industries is characterized in that the preparation process of the ultra-precise semiconductor material comprises the following steps:
(1) firstly, cutting a semiconductor material into a wafer with the thickness of 100-200 mu m by using cutting equipment;
(2) fixing the wafer to a support with an adhesive;
(3) grinding the wafer fixed on the support on a grinder;
(4) polishing the wafer fixed on the support;
(5) carrying out surface cleaning treatment on the polished wafer;
the polishing solution for polishing treatment consists of the following components: 2 to 4 weight percent of silicon oxide particles with the particle size of 6 to 10nm, 20 to 30 weight percent of silicon oxide particles with the particle size of 30 to 80nm, 6 to 8 weight percent of silicon oxide particles with the particle size of 120 to 140nm, 0.1 weight percent of surfactant, 1 weight percent of sodium sulfate, sodium hydroxide and the balance of water, wherein the pH value of the polishing solution is 9.5 to 10.5;
the surfactant is formed by compounding acrylic acid-acrylate-sulfonate copolymer and beta-naphthol polyoxyethylene ether according to the mass ratio of 1: 1;
the semiconductor material is sapphire;
the basic parameters of the polishing process are as follows: the pressure is 300 g/square centimeter, the upper disc rotating speed is 60rpm/min, the lower disc rotating speed is 140rpm/min, the polishing liquid flow rate is 70ml/min, the temperature is 25 ℃, and the polishing time is 2 hours;
the surface cleaning treatment comprises the steps of sequentially using a dewaxing cleaning agent, acetone, absolute ethyl alcohol and deionized water for ultrasonic cleaning, and then drying the sample by using cold air.
2. The ultra-precise semiconductor material of claim 1, wherein the support is a rigid flat plate.
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| CN1833816A (en) * | 2005-11-23 | 2006-09-20 | 周海 | Nano-glass supersmooth processing technique of sapphire crystal sheet |
| CN101747841A (en) * | 2008-12-05 | 2010-06-23 | 安集微电子（上海）有限公司 | Chemical-mechanical polishing solution |
| CN101857775B (en) * | 2010-06-13 | 2013-11-06 | 北京国瑞升科技有限公司 | Lithium niobate crystal polishing solution and preparation method thereof |
| CN102343547A (en) * | 2011-10-20 | 2012-02-08 | 天津理工大学 | Thermochemistry mechanical polishing method of sapphire substrate material and polishing solution |
| CN103897605A (en) * | 2012-12-27 | 2014-07-02 | 天津西美半导体材料有限公司 | Sapphire substrate polishing solution for single-sided polishing machine |
| CN104669106B (en) * | 2015-02-10 | 2017-01-25 | 盐城工学院 | Large-size A-oriented sapphire mobile phone screen double-sided grinding and double-sided polishing efficient ultra-precision processing method |
| CN104893587A (en) * | 2015-03-09 | 2015-09-09 | 江苏中晶科技有限公司 | Efficient C-oriented sapphire polishing solution and preparation method thereof |
| CN106271900A (en) * | 2016-08-31 | 2017-01-04 | 天通银厦新材料有限公司 | A kind of sapphire glossing |
| CN106346317A (en) * | 2016-09-12 | 2017-01-25 | 天津华海清科机电科技有限公司 | Method for processing and preparing sapphire wafer |
| CN107378654B (en) * | 2017-09-26 | 2019-03-22 | 天通控股股份有限公司 | A kind of polishing method of lithium tantalate wafer |
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