CN108219678B - Diamond grinding fluid and preparation method thereof - Google Patents
Diamond grinding fluid and preparation method thereof Download PDFInfo
- Publication number
- CN108219678B CN108219678B CN201611194116.9A CN201611194116A CN108219678B CN 108219678 B CN108219678 B CN 108219678B CN 201611194116 A CN201611194116 A CN 201611194116A CN 108219678 B CN108219678 B CN 108219678B
- Authority
- CN
- China
- Prior art keywords
- powder
- grinding fluid
- polycrystalline diamond
- diamond
- parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000010432 diamond Substances 0.000 title claims abstract description 66
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 66
- 238000000227 grinding Methods 0.000 title claims abstract description 42
- 239000012530 fluid Substances 0.000 title claims abstract description 35
- 238000002360 preparation method Methods 0.000 title abstract description 12
- 239000000843 powder Substances 0.000 claims abstract description 46
- 238000000034 method Methods 0.000 claims abstract description 20
- 239000008367 deionised water Substances 0.000 claims abstract description 19
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000002270 dispersing agent Substances 0.000 claims abstract description 18
- 239000003381 stabilizer Substances 0.000 claims abstract description 18
- 239000000080 wetting agent Substances 0.000 claims abstract description 16
- 239000000725 suspension Substances 0.000 claims abstract description 12
- 239000011259 mixed solution Substances 0.000 claims description 18
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical group [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 15
- 239000000243 solution Substances 0.000 claims description 14
- 238000003756 stirring Methods 0.000 claims description 14
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical group OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 5
- 239000001913 cellulose Substances 0.000 claims description 4
- 229920002678 cellulose Polymers 0.000 claims description 4
- 229920001495 poly(sodium acrylate) polymer Polymers 0.000 claims description 4
- NNMHYFLPFNGQFZ-UHFFFAOYSA-M sodium polyacrylate Chemical group [Na+].[O-]C(=O)C=C NNMHYFLPFNGQFZ-UHFFFAOYSA-M 0.000 claims description 4
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 238000010907 mechanical stirring Methods 0.000 claims description 2
- 230000010355 oscillation Effects 0.000 claims description 2
- 238000013019 agitation Methods 0.000 claims 1
- 238000005498 polishing Methods 0.000 abstract description 26
- 229910052594 sapphire Inorganic materials 0.000 abstract description 23
- 239000010980 sapphire Substances 0.000 abstract description 23
- 238000012545 processing Methods 0.000 abstract description 19
- 230000003746 surface roughness Effects 0.000 abstract description 8
- 230000008569 process Effects 0.000 abstract description 6
- 238000005520 cutting process Methods 0.000 abstract description 5
- 239000007788 liquid Substances 0.000 abstract description 5
- 238000003672 processing method Methods 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 12
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 9
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 8
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000002202 Polyethylene glycol Substances 0.000 description 3
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 235000011187 glycerol Nutrition 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 229920002401 polyacrylamide Polymers 0.000 description 3
- 229920001223 polyethylene glycol Polymers 0.000 description 3
- GCLGEJMYGQKIIW-UHFFFAOYSA-H sodium hexametaphosphate Chemical compound [Na]OP1(=O)OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])O1 GCLGEJMYGQKIIW-UHFFFAOYSA-H 0.000 description 3
- 235000019982 sodium hexametaphosphate Nutrition 0.000 description 3
- 239000001577 tetrasodium phosphonato phosphate Substances 0.000 description 3
- 239000005995 Aluminium silicate Substances 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- 235000012211 aluminium silicate Nutrition 0.000 description 2
- 239000000440 bentonite Substances 0.000 description 2
- 229910000278 bentonite Inorganic materials 0.000 description 2
- SVPXDRXYRYOSEX-UHFFFAOYSA-N bentoquatam Chemical compound O.O=[Si]=O.O=[Al]O[Al]=O SVPXDRXYRYOSEX-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000003906 humectant Substances 0.000 description 2
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- AEQDJSLRWYMAQI-UHFFFAOYSA-N 2,3,9,10-tetramethoxy-6,8,13,13a-tetrahydro-5H-isoquinolino[2,1-b]isoquinoline Chemical compound C1CN2CC(C(=C(OC)C=C3)OC)=C3CC2C2=C1C=C(OC)C(OC)=C2 AEQDJSLRWYMAQI-UHFFFAOYSA-N 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229940068918 polyethylene glycol 400 Drugs 0.000 description 1
- 229940051841 polyoxyethylene ether Drugs 0.000 description 1
- 229920000056 polyoxyethylene ether Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000176 sodium gluconate Substances 0.000 description 1
- 235000012207 sodium gluconate Nutrition 0.000 description 1
- 229940005574 sodium gluconate Drugs 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention provides a diamond grinding fluid and a preparation method thereof. The diamond grinding fluid comprises the following components in parts by mass: 2-5 parts of polycrystalline diamond-like powder, 0.02-2 parts of dispersing agent, 0.2-6 parts of wetting agent, 5-30 parts of suspension stabilizer, 0.1-0.5 part of pH value regulator and 60-90 parts of deionized water. According to the invention, the polycrystalline diamond powder with the granularity range of 3-5 μm is selected, and the dispersing agent is added to uniformly disperse the powder in the grinding liquid system, so that the high processing efficiency is achieved, one coarse grinding processing procedure is reduced, and the flatness of the processed product is good. The wetting agent is added to ensure that the grinding fluid is uniformly distributed in the processing process, so that better surface roughness after processing is achieved; and the processing and preparation method is simple, the cost is low, and the diamond grinding fluid for sapphire polishing has high cutting efficiency and low roughness.
Description
Technical Field
The invention relates to the technical field of sapphire polishing, in particular to a diamond grinding fluid and a preparation method thereof.
Background
At present, Sapphire (Sapphire), also called white stone, has a molecular formula of Al2O3The crystal is a multifunctional oxide crystal which has a hexagonal crystal structure, has 9-grade Mohs hardness, is second to diamond and has excellent optical, physical and chemical properties. Compared with natural jewels, it has the features of high hardness, high melting point, high light transmittance, excellent heat conductivity and electric insulating property, good mechanical performance, good wear resistance, stable corrosion resistance, etc. and thus has wide application in photoelectronic, communication, national defense and other fields.
With the development of science and technology, the market demand for optical sapphire lenses with high precision, large caliber and low thickness is increasing. And thus the market demand for various abrasive polishing materials is increasing. The diamond has high hardness, and the grinding fluid prepared by the diamond powder improves the processing efficiency of the sapphire, and the planeness and the scratch degree of the ground product have ideal results. The processing difficulty of polishing in the subsequent process can be reduced, and the yield of the polishing process is improved.
Currently, more and more optical sapphire is used as a window lens. The window sapphire material requires ultra-thin thickness and strict control on machining size tolerance, and requires high machining efficiency in a rough grinding and thinning procedure without obvious scratch and crystal damage, and then better machined surface roughness is achieved after the processing through diamond liquid and a copper disc.
The sapphire processing industry in China has a large gap relative to developed countries such as the United states, Japan and the like, the grinding fluid used for sapphire processing at present can only depend on import, and the domestic stable and mature diamond grinding fluid is less and has low efficiency. Imported products, although effective, are expensive.
Disclosure of Invention
The invention aims to provide a diamond grinding fluid and a preparation method thereof, and aims to solve the problems of low cutting rate, multiple processing procedures, high wafer surface roughness and high cost in the process of processing a sapphire workpiece.
In order to solve the technical problems, the invention provides a diamond grinding fluid which comprises the following components in parts by mass:
2-5 parts of polycrystalline diamond-like powder, 0.02-2 parts of dispersing agent, 0.2-6 parts of wetting agent, 5-30 parts of suspension stabilizer, 0.1-0.5 part of pH value regulator and 60-90 parts of deionized water.
Further, the diamond grinding fluid comprises the following components in parts by mass:
3-4 parts of polycrystalline diamond-like powder, 0.08-1 part of dispersing agent, 0.9-3 parts of wetting agent, 12-20 parts of suspension stabilizer, 0.2-0.4 part of pH value regulator and 70-80 parts of deionized water.
Furthermore, the quasi-polycrystalline diamond powder is 3-5 μm powder, namely the quasi-polycrystalline diamond powder has the particle size of 3-5 μm and the Mohs hardness of 10.
Further, the dispersing agent is one or a mixture of sodium polyacrylate, polyethylene glycol and sodium hexametaphosphate.
Further, the wetting agent is one or a mixture of ethylene glycol, propylene glycol and glycerol.
Further, the suspension stabilizer is one or a mixture of several of polyacrylamide, cellulose, kaolin and bentonite.
Further, the pH value regulator is one or a mixture of sodium hydroxide, potassium hydroxide, triethanolamine, tetramethylammonium hydroxide and EDTA.
Further, the diamond grinding fluid is used for C-direction sapphire polishing.
The invention also discloses a preparation method of the diamond grinding fluid.
The preparation method of the diamond grinding fluid mainly comprises the following steps:
s1, adding diamond powder into deionized water according to a ratio, and uniformly stirring by using an ultrasonic oscillation and mechanical stirring method to obtain a diamond powder solution;
s2, sequentially adding a dispersing agent and a wetting agent into the diamond powder solution at a flow rate of 0.5-2.0L/min, and stirring until the mixture is uniformly mixed to obtain a first mixed solution;
s3, suspending a stabilizer into the mixed solution at a flow rate of 0.5-2.0L/min, and stirring until the stabilizer is uniformly mixed to obtain a second mixed solution;
s4, continuously stirring the second mixed solution for more than 1.5 hours;
s5, adding a pH value regulator into the second mixed solution at a flow rate of 0.5-2.0L/min, and regulating the pH value of the second mixed solution to 8.5-9.5; and obtaining the finished product of the diamond grinding fluid.
Further, in step S1, when the diamond powder is added to the deionized water, the deionized water is stirred at a speed of 400 to 600rpm, and the diamond powder is slowly added.
Further, step S1-5 was performed in an ultrasonic stirred tank.
By adopting the technical scheme, the invention has the following beneficial effects:
the invention discloses a novel high-cutting-rate diamond grinding fluid and a preparation method thereof, wherein polycrystalline diamond powder with the granularity range of 3-5 mu m is selected, and dispersing agent is added to uniformly disperse powder in a grinding fluid system, so that the high processing efficiency is achieved, one coarse grinding processing procedure is reduced, and the flatness of a processed product is good. The wetting agent is added to ensure that the grinding fluid is uniformly distributed in the processing process, so that better surface roughness after processing is achieved; and the processing and preparation method is simple, the cost is low, and the diamond grinding fluid for sapphire polishing has high cutting efficiency and low roughness.
Compared with the comparative example, when the diamond polishing solution prepared by the method is used for polishing a sapphire wafer, the average apparent yield of the product is more than 98%, the average cutting rate is controlled to be 3.8-4 mu m/min, and the surface roughness Ra is less than 5nm, so that the requirements of the sapphire rough polishing process on the polishing rate and the apparent quality are completely met, and the polishing quality is improved; the production cost is saved.
In addition to the objects, features and advantages described above, other objects, features and advantages of the present invention are also provided. The present invention will be described in further detail with reference to examples.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the description in the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a flowchart of a method for preparing a diamond polishing solution according to an embodiment of the present invention.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The invention discloses a diamond grinding fluid which comprises the following components in parts by mass:
2-5 parts of polycrystalline diamond-like powder, 0.02-2 parts of dispersing agent, 0.2-6 parts of wetting agent, 5-30 parts of suspension stabilizer, 0.1-0.5 part of pH value regulator and 60-90 parts of deionized water.
Wherein the quasi-polycrystalline diamond powder is 3-5 μm powder, i.e. the particle size of the quasi-polycrystalline diamond powder is 3-5 μm, and the Mohs hardness is 10. The dispersant is one or more of sodium polyacrylate, polyethylene glycol and sodium hexametaphosphate. The humectant is one or more of ethylene glycol, propylene glycol and glycerol. The suspension stabilizer is one or a mixture of more of polyacrylamide, cellulose, kaolin and bentonite. The pH value regulator is one or a mixture of more of sodium hydroxide, potassium hydroxide, triethanolamine, tetramethylammonium hydroxide and EDTA.
According to the invention, the polycrystalline diamond powder with the granularity range of 3-5 μm is selected, and the dispersing agent is added to uniformly disperse the powder in the grinding liquid system, so that the high processing efficiency is achieved, one coarse grinding processing procedure is reduced, and the flatness of the processed product is good. The wetting agent is added to ensure that the grinding fluid is uniformly distributed in the processing process, so that better surface roughness after processing is achieved; and the processing and preparation method is simple, the cost is low, and the diamond grinding fluid for sapphire polishing has high cutting efficiency and low roughness.
The present invention will be further explained with reference to specific embodiments.
Example 1
The diamond grinding fluid provided by the embodiment comprises the following components in percentage by mass:
3% of polycrystalline diamond-like powder, 0.15% of dispersing agent, 5% of wetting agent, 10% of suspension stabilizer, 0.5% of pH value regulator and the balance of deionized water.
Wherein the quasi-polycrystalline diamond powder is 3.5 μm powder, i.e. the particle size of the quasi-polycrystalline diamond powder is 3.5 μm.
The dispersant is sodium polyacrylate.
The wetting agent is ethylene glycol. The suspension stabilizer is cellulose.
The pH regulator is sodium hydroxide.
Example 2
The diamond grinding fluid provided by the embodiment comprises the following components in percentage by mass:
4% of polycrystalline diamond-like powder, 0.8% of dispersing agent, 2% of wetting agent, 15% of suspension stabilizer, 0.4% of pH value regulator and the balance of deionized water.
Wherein the quasi-polycrystalline diamond powder is 5 μm powder, namely the quasi-polycrystalline diamond powder has a particle size of 5 μm and a Mohs hardness of 10.
The dispersant is a combination of polyethylene glycol and sodium hexametaphosphate.
The humectant is a combination of propylene glycol and glycerin.
The suspension stabilizer is polyacrylamide.
The pH value regulator is triethanolamine.
Comparative example 1
The diamond grinding fluid provided by the embodiment comprises the following components in percentage by mass:
3% of similar polycrystalline diamond powder, 1.2% of fatty alcohol-polyoxyethylene ether, 0.8% of polyethylene glycol 400, 0.5% of sodium gluconate, 0.6% of sodium hydroxide and the balance of deionized water.
Wherein the grain size of the quasi-polycrystalline diamond powder is 3.5 μm.
The specific materials and mass percentages used in the formulations of the above examples are shown in the following table, respectively, with the balance being deionized water.
Example 3
This example provides a method for preparing the diamond slurries of examples 1 and 2.
As shown in fig. 1, the preparation method of the diamond grinding fluid mainly comprises the following steps:
s1, starting an ultrasonic stirring kettle, adding diamond powder into deionized water, and uniformly stirring to obtain a diamond powder solution;
s2, sequentially adding a dispersing agent and a wetting agent into the diamond powder solution at a flow rate of 0.5-2.0L/min, and stirring until the mixture is uniformly mixed to obtain a first mixed solution;
s3, suspending a stabilizer into the mixed solution at a flow rate of 0.5-2.0L/min, and stirring until the stabilizer is uniformly mixed to obtain a second mixed solution;
s4, continuously stirring the second mixed solution for more than 1.5 hours;
s5, adding a pH value regulator into the second mixed solution at a flow rate of 0.5-2.0L/min, and regulating the pH value of the second mixed solution to 8.5-9.5; and obtaining the finished product of the diamond grinding fluid.
In step S1, when the diamond powder is added to the deionized water, the deionized water is stirred at a speed of 400 to 600rpm, and the diamond powder is slowly added.
In addition, comparative example 1 was prepared as a diamond abrasive liquid using the prior art.
The diamond grinding fluid prepared in the above examples 1-2 and comparative example 1 is now subjected to a C-direction sapphire polishing effect experiment, and the same polishing conditions are adopted in the diamond grinding fluid experiment process as follows:
polishing machine: 16B double-sided copper disc machine;
polished wafer: a sapphire wafer;
number of wafers polished: 90 pcs;
grinding a disc: resin copper disc (slotted);
polishing pressure: 320 kg;
lower disc polishing rotation speed: 65 rpm;
polishing rotating speed of the upper disc: 57 rpm;
polishing time: 60 min;
diamond liquid flow rate: 0.5-1 ml/min.
After polishing, carrying out ultrasonic cleaning and drying on the polished sapphire wafer, and detecting the apparent state of the polished sapphire wafer; measuring the thickness difference of the sapphire wafer by using a thickness gauge to calculate the polishing rate, measuring all the polished wafers of 90pcs, and averaging to obtain the polishing rate; the 90pcs polished wafer was measured with a roughness tester and averaged to obtain the wafer surface roughness.
The experimental data obtained for each of the above examples are shown in the following table:
from the comparative table of the above experimental results, it can be seen that:
compared with comparative example 1, when the diamond grinding fluid prepared by the method is used for polishing a sapphire wafer, the average apparent yield of the product is more than 98%, the average polishing rate is controlled to be 3.8-4 mu m/min, and the surface roughness Ra is less than 5nm, so that the requirements of the sapphire polishing process on the polishing rate and the apparent quality are completely met, the polishing quality is improved, and the production cost is saved. In conclusion, the technical effect is outstanding.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (4)
1. The diamond grinding fluid is characterized by comprising the following components in percentage by mass:
3% of quasi-polycrystalline diamond powder, 0.15% of dispersing agent, 5% of wetting agent, 10% of suspension stabilizer, 0.5% of pH value regulator and the balance of deionized water;
wherein the quasi-polycrystalline diamond powder is 3.5 mu m powder, namely the particle size of the quasi-polycrystalline diamond powder is 3.5 mu m;
the dispersing agent is sodium polyacrylate;
the wetting agent is ethylene glycol;
the suspension stabilizer is cellulose;
the pH value regulator is sodium hydroxide.
2. The method for preparing the diamond grinding fluid according to claim 1, which is characterized by mainly comprising the following steps:
s1, adding the quasi-polycrystalline diamond powder into deionized water according to a ratio, and uniformly stirring by using an ultrasonic oscillation and mechanical stirring method to obtain a quasi-polycrystalline diamond powder solution;
s2, sequentially adding a dispersing agent and a wetting agent into the polycrystalline diamond-like powder solution at a flow rate of 0.5-2.0L/min, and stirring until the mixture is uniformly mixed to obtain a first mixed solution;
s3, suspending a stabilizer into the mixed solution at a flow rate of 0.5-2.0L/min, and stirring until the stabilizer is uniformly mixed to obtain a second mixed solution;
s4, continuously stirring the second mixed solution for more than 1.5 hours;
s5, adding a pH value regulator into the second mixed solution at a flow rate of 0.5-2.0L/min, and regulating the pH value of the second mixed solution to 8.5-9.5; and obtaining the finished product of the diamond grinding fluid.
3. The method according to claim 2, wherein in step S1, the polycrystalline diamond-like powder is slowly added to the deionized water by stirring the deionized water at a speed of 400 to 600rpm while the polycrystalline diamond-like powder is added to the deionized water.
4. The method according to claim 2, wherein the step S1-5 is performed in an ultrasonic agitation tank.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611194116.9A CN108219678B (en) | 2016-12-21 | 2016-12-21 | Diamond grinding fluid and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611194116.9A CN108219678B (en) | 2016-12-21 | 2016-12-21 | Diamond grinding fluid and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108219678A CN108219678A (en) | 2018-06-29 |
| CN108219678B true CN108219678B (en) | 2020-09-04 |
Family
ID=62655843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611194116.9A Active CN108219678B (en) | 2016-12-21 | 2016-12-21 | Diamond grinding fluid and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108219678B (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111647356A (en) * | 2020-06-09 | 2020-09-11 | 苏州特鲁利电子材料有限公司 | Diamond polishing solution and preparation method thereof |
| CN112226205A (en) * | 2020-09-29 | 2021-01-15 | 江西庞泰环保股份有限公司 | Preparation method of mechanical grinding slurry |
| CN112658974A (en) * | 2020-12-17 | 2021-04-16 | 江苏集萃精凯高端装备技术有限公司 | YAG wafer grinding method |
| CN112608717A (en) * | 2020-12-17 | 2021-04-06 | 长沙蓝思新材料有限公司 | Coarse grinding fluid and preparation method thereof |
| CN113265201A (en) * | 2021-05-28 | 2021-08-17 | 河南博锐新材料有限公司 | Diamond suspension grinding polishing solution and preparation method thereof |
| CN114015360B (en) * | 2021-11-23 | 2022-07-05 | 浙江奥首材料科技有限公司 | Water-based full-suspension diamond polishing solution for sapphire, preparation method and application thereof |
| CN114231251A (en) * | 2021-12-27 | 2022-03-25 | 河南联合精密材料股份有限公司 | Diamond grinding fluid for coarse grinding of silicon carbide wafer and preparation method thereof |
| CN114736654A (en) * | 2022-04-28 | 2022-07-12 | 浙江奥首材料科技有限公司 | Spherical abrasive, preparation method and application thereof, and sapphire grinding fluid containing spherical abrasive |
| CN114958303A (en) * | 2022-06-20 | 2022-08-30 | 柘城惠丰钻石科技股份有限公司 | Preparation method of diamond grinding fluid for thinning zirconia ceramic mobile phone back plate |
| CN115926747B (en) * | 2022-12-08 | 2024-05-28 | 郑州磨料磨具磨削研究所有限公司 | Concentrated aqueous grinding aid and preparation method thereof |
| CN115746789B (en) * | 2022-12-12 | 2024-03-22 | 郑州磨料磨具磨削研究所有限公司 | Diamond grinding fluid for stable full-suspension grinding and preparation method thereof |
| CN116355537A (en) * | 2023-04-04 | 2023-06-30 | 蘅东光通讯技术(深圳)股份有限公司 | Optical fiber polishing grinding liquid, preparation method and optical fiber polishing grinding process |
| CN118165651B (en) * | 2024-03-12 | 2024-09-24 | 河南路纳尔新材料有限公司 | Corrosion-resistant diamond grinding fluid and preparation method thereof |
Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1439451A (en) * | 2002-11-18 | 2003-09-03 | 长沙矿冶研究院 | Nano-diamond deagglomeration and grading method |
| CN1940003A (en) * | 2005-09-27 | 2007-04-04 | 耐博检测技术(上海)有限公司 | Water-based diamond polishing liquid and its production |
| CN101033374A (en) * | 2007-04-13 | 2007-09-12 | 中国地质大学（武汉） | High-purity nano diamond polishing liquid and preparing method thereof |
| CN101050339A (en) * | 2007-05-17 | 2007-10-10 | 中国地质大学（武汉） | Diamond polishing paste in high purity, and preparation method |
| CN101186804A (en) * | 2007-11-21 | 2008-05-28 | 北京国瑞升科技有限公司 | Water diamond lapping liquid and its preparation method and use |
| CN101469251A (en) * | 2007-12-27 | 2009-07-01 | 深圳市方大国科光电技术有限公司 | Sapphire substrate polishing solution and method for producing the same |
| CN102391789A (en) * | 2011-08-19 | 2012-03-28 | 永州皓志稀土材料有限公司 | A kind of preparation method of nano-diamond polishing liquid |
| CN103525314A (en) * | 2013-10-30 | 2014-01-22 | 湖北三翔超硬材料有限公司 | High-efficiency diamond lubricating cooling polishing solution and preparation method and application thereof |
| CN103965789A (en) * | 2014-04-18 | 2014-08-06 | 烟台恒迪克能源科技有限公司 | Nonmetal suspension polishing solution and preparation method thereof |
| CN104031560A (en) * | 2013-03-07 | 2014-09-10 | 天津市乾宇超硬科技有限公司 | Water-based diamond polishing solution used for crystal processing |
| CN104293205A (en) * | 2013-07-16 | 2015-01-21 | 鸿富锦精密工业（深圳）有限公司 | Water-based diamond polishing solution and preparation method thereof |
| CN105086837A (en) * | 2015-09-18 | 2015-11-25 | 蓝思科技（长沙）有限公司 | Sapphire drilling liquid |
| CN105385357A (en) * | 2015-12-11 | 2016-03-09 | 蓝思科技（长沙）有限公司 | Polishing solution for A orientation sapphire polishing, and preparation method thereof |
| CN105647392A (en) * | 2016-01-29 | 2016-06-08 | 郑州人造金刚石及制品工程技术研究中心有限公司 | Novel water-based nano carbon crystal polishing solution and preparation method thereof |
| CN105647394A (en) * | 2016-02-24 | 2016-06-08 | 湖南皓志科技股份有限公司 | Water-based diamond polishing solution and preparation method thereof |
-
2016
- 2016-12-21 CN CN201611194116.9A patent/CN108219678B/en active Active
Patent Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1439451A (en) * | 2002-11-18 | 2003-09-03 | 长沙矿冶研究院 | Nano-diamond deagglomeration and grading method |
| CN1940003A (en) * | 2005-09-27 | 2007-04-04 | 耐博检测技术(上海)有限公司 | Water-based diamond polishing liquid and its production |
| CN101033374A (en) * | 2007-04-13 | 2007-09-12 | 中国地质大学（武汉） | High-purity nano diamond polishing liquid and preparing method thereof |
| CN101050339A (en) * | 2007-05-17 | 2007-10-10 | 中国地质大学（武汉） | Diamond polishing paste in high purity, and preparation method |
| CN101186804A (en) * | 2007-11-21 | 2008-05-28 | 北京国瑞升科技有限公司 | Water diamond lapping liquid and its preparation method and use |
| CN101469251A (en) * | 2007-12-27 | 2009-07-01 | 深圳市方大国科光电技术有限公司 | Sapphire substrate polishing solution and method for producing the same |
| CN102391789A (en) * | 2011-08-19 | 2012-03-28 | 永州皓志稀土材料有限公司 | A kind of preparation method of nano-diamond polishing liquid |
| CN104031560A (en) * | 2013-03-07 | 2014-09-10 | 天津市乾宇超硬科技有限公司 | Water-based diamond polishing solution used for crystal processing |
| CN104293205A (en) * | 2013-07-16 | 2015-01-21 | 鸿富锦精密工业（深圳）有限公司 | Water-based diamond polishing solution and preparation method thereof |
| CN103525314A (en) * | 2013-10-30 | 2014-01-22 | 湖北三翔超硬材料有限公司 | High-efficiency diamond lubricating cooling polishing solution and preparation method and application thereof |
| CN103965789A (en) * | 2014-04-18 | 2014-08-06 | 烟台恒迪克能源科技有限公司 | Nonmetal suspension polishing solution and preparation method thereof |
| CN105086837A (en) * | 2015-09-18 | 2015-11-25 | 蓝思科技（长沙）有限公司 | Sapphire drilling liquid |
| CN105385357A (en) * | 2015-12-11 | 2016-03-09 | 蓝思科技（长沙）有限公司 | Polishing solution for A orientation sapphire polishing, and preparation method thereof |
| CN105647392A (en) * | 2016-01-29 | 2016-06-08 | 郑州人造金刚石及制品工程技术研究中心有限公司 | Novel water-based nano carbon crystal polishing solution and preparation method thereof |
| CN105647394A (en) * | 2016-02-24 | 2016-06-08 | 湖南皓志科技股份有限公司 | Water-based diamond polishing solution and preparation method thereof |
Non-Patent Citations (3)
| Title |
|---|
| 多晶金刚石固结磨料研磨垫精研石英玻璃的性能探索;朱永伟等;《红外与激光工程》;20161025;第45卷(第10期);1-6 * |
| 纳米金刚石作为抛光材料的应用;王光祖等;《石材》;20110305(第03期);15-19 * |
| 超声波以及分散剂对纳米金刚石在水性介质中分散行为的影响;王沛等;《金刚石与磨料磨具工程》;20150420;第35卷(第02期);16-50 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108219678A (en) | 2018-06-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108219678B (en) | Diamond grinding fluid and preparation method thereof | |
| CN103013345B (en) | Oily diamond grinding liquid and preparation method thereof | |
| CN108587474A (en) | Alumina micro powder polishing solution and preparation method thereof | |
| JP2019110285A (en) | Cmp polishing liquid, preparation method therefor, and application | |
| CN113621346B (en) | Suspension auxiliary agent applied to large-size silicon wafer grinding, preparation method and application thereof | |
| CN110591565B (en) | Alumina polishing solution for sapphire polishing and preparation method thereof | |
| CN105385357A (en) | Polishing solution for A orientation sapphire polishing, and preparation method thereof | |
| CN107987732B (en) | Polishing solution for sapphire plane polishing and preparation method thereof | |
| JP2015007236A (en) | Slurry, polishing liquid set, polishing liquid, and method for polishing substrate by using the slurry, the set, and the liquid | |
| CN105038607A (en) | Effective sapphire fine grinding method and fine grinding solution | |
| CN102516873A (en) | Silicon wafer polishing composition and preparation method thereof | |
| JP2008273780A (en) | Modified silica-based sol and method for preparing the same | |
| CN103965790A (en) | Zr-Al-Ce polishing solution and preparation method thereof | |
| CN105950021A (en) | Aluminum oxide base polishing solution for sapphire substrate polishing and preparation method thereof | |
| CN102757044A (en) | High-cutting-force diamond micro powder and preparation method thereof | |
| CN103450815A (en) | Zirconium oxide polishing liquid for processing optical glass and preparation method thereof | |
| CN108864949B (en) | Rare earth polishing solution for polishing glass and preparation method thereof | |
| CN110668451A (en) | Preparation method of silicon dioxide sol and sapphire chemical mechanical polishing solution | |
| CN112980333A (en) | Method for keeping polishing efficiency of magnetorheological polishing solution, stabilizer and preparation method of stabilizer | |
| CN108949034B (en) | Sapphire chemical mechanical polishing solution and preparation method thereof | |
| CN102517584A (en) | Processing method for high reflectivity acid corrosion chip | |
| CN109536040A (en) | A kind of polishing fluid and preparation method thereof | |
| JP6436018B2 (en) | Polishing slurry for oxide single crystal substrate and method for producing the same | |
| CN117447963A (en) | Silicon carbide wafer grinding fluid and preparation method and application thereof | |
| JP2006205265A (en) | Polishing method and polishing composition |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |