CN105385357A - Polishing solution for A orientation sapphire polishing, and preparation method thereof - Google Patents
Polishing solution for A orientation sapphire polishing, and preparation method thereof Download PDFInfo
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- CN105385357A CN105385357A CN201510916851.5A CN201510916851A CN105385357A CN 105385357 A CN105385357 A CN 105385357A CN 201510916851 A CN201510916851 A CN 201510916851A CN 105385357 A CN105385357 A CN 105385357A
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- 238000005498 polishing Methods 0.000 title claims abstract description 75
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 36
- 239000010980 sapphire Substances 0.000 title claims abstract description 36
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000002270 dispersing agent Substances 0.000 claims abstract description 10
- 239000000080 wetting agent Substances 0.000 claims abstract description 10
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000008367 deionised water Substances 0.000 claims abstract description 4
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 4
- 239000012530 fluid Substances 0.000 claims description 31
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 238000001914 filtration Methods 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 5
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 4
- -1 polyoxyethylene nonylphenol Polymers 0.000 claims description 4
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Chemical compound [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 claims description 4
- JHJLBTNAGRQEKS-UHFFFAOYSA-M sodium bromide Chemical compound [Na+].[Br-] JHJLBTNAGRQEKS-UHFFFAOYSA-M 0.000 claims description 4
- LPXPTNMVRIOKMN-UHFFFAOYSA-M sodium nitrite Chemical compound [Na+].[O-]N=O LPXPTNMVRIOKMN-UHFFFAOYSA-M 0.000 claims description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- RNMDNPCBIKJCQP-UHFFFAOYSA-N 5-nonyl-7-oxabicyclo[4.1.0]hepta-1,3,5-trien-2-ol Chemical compound C(CCCCCCCC)C1=C2C(=C(C=C1)O)O2 RNMDNPCBIKJCQP-UHFFFAOYSA-N 0.000 claims description 2
- 239000004160 Ammonium persulphate Substances 0.000 claims description 2
- KGWDUNBJIMUFAP-KVVVOXFISA-N Ethanolamine Oleate Chemical compound NCCO.CCCCCCCC\C=C/CCCCCCCC(O)=O KGWDUNBJIMUFAP-KVVVOXFISA-N 0.000 claims description 2
- 229920002582 Polyethylene Glycol 600 Polymers 0.000 claims description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 2
- DPDMMXDBJGCCQC-UHFFFAOYSA-N [Na].[Cl] Chemical compound [Na].[Cl] DPDMMXDBJGCCQC-UHFFFAOYSA-N 0.000 claims description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical group [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims description 2
- 235000019395 ammonium persulphate Nutrition 0.000 claims description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 2
- 235000011187 glycerol Nutrition 0.000 claims description 2
- 229940057847 polyethylene glycol 600 Drugs 0.000 claims description 2
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 2
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 2
- 239000012286 potassium permanganate Substances 0.000 claims description 2
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 claims description 2
- 235000010288 sodium nitrite Nutrition 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 2
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 2
- UEUXEKPTXMALOB-UHFFFAOYSA-J tetrasodium;2-[2-[bis(carboxylatomethyl)amino]ethyl-(carboxylatomethyl)amino]acetate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]C(=O)CN(CC([O-])=O)CCN(CC([O-])=O)CC([O-])=O UEUXEKPTXMALOB-UHFFFAOYSA-J 0.000 claims description 2
- 229960004418 trolamine Drugs 0.000 claims description 2
- 238000012545 processing Methods 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 5
- 230000008901 benefit Effects 0.000 abstract description 4
- 239000003002 pH adjusting agent Substances 0.000 abstract description 3
- 230000008569 process Effects 0.000 abstract description 3
- 238000005461 lubrication Methods 0.000 abstract 1
- 239000007800 oxidant agent Substances 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 238000003672 processing method Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 230000003746 surface roughness Effects 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 239000000693 micelle Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention provides a polishing solution for A orientation sapphire polishing, and a preparation method thereof. The polishing solution comprises, by mass, 92-97 parts of silica sol, 0.01-1 part of an active dispersant, 0.01-1 part of a wetting agent, 0.01-2 parts of a polishing aid, 0.01-1 part of an oxidant, 0.01-2 parts of a pH adjusting agent, and the balance of deionized water. The polishing solution prepared in the invention has the advantages of good removal rate, excellent lubrication effect, good quality of the surface of a processed product in the sapphire polishing processing process, simple processing and preparation method, and facilitation of industrial popularization.
Description
Technical field
The present invention relates to Sapphire Polishing Technology field, especially, relate to the polishing fluid and preparation method thereof of a kind of A to sapphire polishing.
Background technology
Sapphire (Sapphire), also known as white stone, molecular formula is Al
2o
3, be a kind of multi-functional oxide crystal, be hexagonal crystallographic texture, it has excellent optical property, physicals and chemical property.Compared with natural gemstone, the characteristics such as it has, and hardness is high, fusing point is high, light transmission is good, heat conductivity and electrical insulating property excellence, abrasion resistance properties is good, corrosion resistance is stable, are therefore widely used in the fields such as photoelectron, communication, national defence.Sapphire crystal (α-Al
2o
3) be a kind of simple corrdination type oxide crystal of hexagonal system, a lot of characteristic is determined by its crystal orientation.If take germ nucleus as the coordinate system that initial point sets up four axle orientations, then three a axle distributions in hexagonal angle in same level, the hexahedron shape cross section of corresponding crystal, c-axis is perpendicular to three a axle place planes.A to sapphire because its constructional feature is higher to sapphire hardness relative to C.
CMP (ChemicalMechanicalPolishing, chemically machinery polished) technology is the technology that almost uniquely can reach global planarizartion at present, and it combines the advantage of the effects such as chemistry, machinery and hydromeehanics.Application CMP technology both can obtain high polishing speed, can obtain bright and clean even curface again.
Along with the development of science and technology, require that sapphire part must have very high surface quality, therefore require more and more higher to the working accuracy of sapphire crystal and surface integrity.But because A is large to the high and fragility of sapphire hardness, mechanical workout difficulty, the problem low to ubiquity polishing efficiency in sapphire workpiece process at processing A, wafer surface roughness is high, auxiliary material loss is too fast, limits the development of A to sapphire industry.
Summary of the invention
The object of the invention is to provide a kind of A to sapphire polishing polishing fluid, to solve the technical problem that processing A is low to ubiquitous polishing efficiency in sapphire workpiece process, wafer surface roughness is high, auxiliary material loss is too fast.
For achieving the above object, the invention provides a kind of A to sapphire polishing polishing fluid, comprise the component of following weight part:
Silicon sol 92 ~ 97 parts, active dispersing agents are 0.01 ~ 1 part, wetting agent is 0.01 ~ 1 part, help rumbling compound 0.01 ~ 2 part, oxygenant is 0.01 ~ 1 part, pH value regulator 0.01 ~ 2 part, surplus are deionized water.
Preferably, the size of described silicon sol is 80 ~ 150nm, and solid content is 35 ~ 55%, and colloidal property is that spherical, larger silica sol granule particle diameter can increase its grinding to wafer, improves polishing efficiency.
Preferably, described active dispersing agents is that the one or more combination in thanomin, trolamine, polyoxyethylene nonylphenol ether, fatty alcohol-polyoxyethylene ether is prepared from, active dispersing agents can strengthen the uniformity consistency of polishing fluid, make particle be adsorbed as physical adsorption at plane of crystal, be convenient to follow-up cleaning.
Preferably, described wetting agent is that the one or more combination in poly(oxyethylene glycol) 400, Polyethylene Glycol-600, glycerine is prepared from, wetting agent can promote the dissolving of each effective constituent in polishing fluid effectively, and in the course of processing, play the effect suppressing polishing fluid crystallization.
Preferably, described in help rumbling compound to be that one or more combination in sodium-chlor, Repone K, Sodium Bromide, Potassium Bromide, EDETATE SODIUM is prepared from, help rumbling compound can improve the wear resisting property of polishing fluid, reduce plane of crystal roughness.
Preferably, described oxygenant is ammonium persulphate, the one or more combination of hydrogen peroxide, Sodium Nitrite, potassium permanganate, clorox is prepared from, wafer surface can be oxidized to softer zone of oxidation by oxygenant in polishing process, be conducive to abrasive grains in polishing fluid and, to the worn effect of wafer, improve polishing efficiency.
Preferably, described pH value regulator is diethanolamine, Tetramethylammonium hydroxide, tetraethyl ammonium hydroxide, potassium hydroxide, sodium hydroxide one or more combination are prepared from, organic bases, not only as pH adjusting agent, can also serve as buffer reagent, makes the pH value that polishing fluid keeps stable; Potassium hydroxide or sodium hydroxide, as highly basic, can react with wafer to be processed rapidly, play the object strengthening chemical action.
When polishing fluid pH value is too low, in the course of processing, polishing fluid will weaken the chemical action of wafer, reduce polishing efficiency; When polishing fluid pH value is too high, SiO
2micelle will be converted into solubility water liquid, not have grinding; Therefore, polishing fluid is remained in the pH value interval of 9.5 ~ 11, raising polishing efficiency is played an important role.
Present invention also offers the preparation method of a kind of A to the polishing fluid of sapphire polishing, make primarily of following steps:
A, the impurity particle adopted in 500 eye mesh screen filtering systems removal raw materials of silica sol;
B, the silicon sol of 35 ~ 55wt% after above-mentioned filtration to be stirred between rotating speed 60 ~ 120rpm, add active dispersing agents, wetting agent with the flow velocity of 0.5 ~ 2.0L/min successively and help rumbling compound;
C, continue to add oxygenant and pH value regulator with the flow velocity of 0.5 ~ 2.0L/min, and adjust ph to 9.5 ~ 11, obtained finished product polishing fluid after purifying.
The present invention has following beneficial effect:
The invention discloses a kind of A to sapphire polishing polishing fluid and preparation method thereof, remove speed in the course of processing fast, lubricant effect is excellent, and converted products surface quality is good, and preparation for processing is simple, cost is low, be that the A of a kind of high polishing efficiency and low roughness is to sapphire polishing liquid.
Compared to comparative example and existing FujimiS20 polishing fluid, when the polishing fluid that the application obtains carries out product polishing, the average apparent yield of product is made to have brought up to 59.2 ~ 62.2% from 57.1 ~ 57.9%, average rate of cutting has brought up to 1.48 ~ 1.91 μm/h from 1.17 ~ 1.24 μm/h, and surface roughness Ra has been reduced to 0.475 ~ 0.522nm from 0.589 ~ 0.641nm; Not only meet A requirement for rate of cutting and apparent mass in sapphire glossing processing procedure completely, and improve polishing efficiency and quality of finish, save production cost.
Except object described above, feature and advantage, the present invention also has other object, feature and advantage.The present invention is further detailed explanation below.
Embodiment
Below embodiments of the invention are described in detail, but the multitude of different ways that the present invention can limit according to claim and cover is implemented.
Embodiment 1:
Formula (weight percent):
Silicon sol 92 ~ 97 parts, active dispersing agents are 0.01 ~ 1 part, wetting agent is 0.01 ~ 1 part, help rumbling compound 0.01 ~ 2 part, oxygenant is 0.01 ~ 1 part, pH adjusting agent 0.01 ~ 2 part, surplus are deionized water.
Completed by following processing step during preparation:
A, the impurity particle adopted in 500 eye mesh screen filtering systems removal raw materials of silica sol;
B, the silicon sol of 35 ~ 55wt% after above-mentioned filtration to be stirred between rotating speed 60 ~ 120rpm, add active dispersing agents, wetting agent with the flow velocity of 0.5 ~ 2.0L/min successively and help rumbling compound;
C, continue to add oxygenant and pH value regulator with the flow velocity of 0.5 ~ 2.0L/min, and adjust ph to 9.5 ~ 11, obtained finished product polishing fluid after purifying.
Following examples adopt the preparation method identical with embodiment 1, and concrete material and the weight percent of use in its formula are as shown in the table respectively:
The A that above-described embodiment 2-11 and comparative example 1-2 prepares is carried out effect experimental to sapphire polishing liquid, and the polishing condition of experimentation is as follows:
Polishing machine: machine thrown by CJ four-head list
Polished wafer: A is to sapphire intelligent watch cover plate
Polished wafer sheet number: 100pcs
Polishing pad: urethane (slotless)
Polish pressure: 160kg
Lower wall polishing rotating speed: 40rpm
PP polishing rotating speed: 35rpm
Polishing time: 120min
After polishing, ultrasonic cleaning, drying are carried out to polishing sapphire wafer, then measure the thickness of wafer.The thickness difference measuring sapphire wafer with thickness tester asks removal speed, measures the polished wafer of all 100pcs, averages and obtains removing speed; With roughness tester, the polished wafer of 100pcs is measured, average and obtain wafer surface roughness.
The experimental data that each embodiment above-mentioned obtains is as shown in the table:
From the contrast form of above-mentioned experimental result, polishing fluid of the present invention is compared to comparative example and existing FujimiS20 polishing fluid, average apparent yield has brought up to 59.2 ~ 62.2% from 57.1 ~ 57.9%, average rate of cutting has brought up to 1.48 ~ 1.91 μm/h from 1.17 ~ 1.24 μm/h, and surface roughness Ra has been reduced to 0.475 ~ 0.522nm from 0.589 ~ 0.641nm; Not only meet A requirement for rate of cutting and apparent mass in sapphire glossing processing procedure completely, and improve polishing efficiency and quality of finish, save production cost.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. A is to a sapphire polishing polishing fluid, it is characterized in that, comprises the component of following mass parts:
Silicon sol 92 ~ 97 parts, active dispersing agents are 0.01 ~ 1 part, wetting agent is 0.01 ~ 1 part, help rumbling compound 0.01 ~ 2 part, oxygenant is 0.01 ~ 1 part, pH value regulator 0.01 ~ 2 part, surplus are deionized water.
2. A according to claim 1 is to sapphire polishing polishing fluid, it is characterized in that, the size of described silicon sol is 80 ~ 150nm, and solid content is 35 ~ 55%, and colloidal property is spherical.
3. A according to claim 1 is to sapphire polishing polishing fluid, it is characterized in that, described active dispersing agents is that the one or more combination in thanomin, trolamine, polyoxyethylene nonylphenol ether, fatty alcohol-polyoxyethylene ether is prepared from.
4. A according to claim 1 is to sapphire polishing polishing fluid, it is characterized in that, wetting agent is that the one or more combination in poly(oxyethylene glycol) 400, Polyethylene Glycol-600, glycerine is prepared from.
5. A according to claim 1 is to sapphire polishing polishing fluid, it is characterized in that, helps rumbling compound to be that one or more combination in sodium-chlor, Repone K, Sodium Bromide, Potassium Bromide, EDETATE SODIUM is prepared from.
6. A according to claim 1 is to sapphire polishing polishing fluid, it is characterized in that, oxygenant is ammonium persulphate, the one or more combination of hydrogen peroxide, Sodium Nitrite, potassium permanganate, clorox is prepared from.
7. A according to claim 1 is to sapphire polishing polishing fluid, it is characterized in that, described pH value regulator is that the one or more combination in diethanolamine, Tetramethylammonium hydroxide, tetraethyl ammonium hydroxide, potassium hydroxide, sodium hydroxide is prepared from.
8. the A as described in any one of claim 1-7, to a preparation method for the polishing fluid of sapphire polishing, is characterized in that, comprises the following steps:
A, the impurity particle adopted in 500 eye mesh screen filtering systems removal raw materials of silica sol;
B, the silicon sol of 35 ~ 55wt% after above-mentioned filtration to be stirred between rotating speed 60 ~ 120rpm, add active dispersing agents, wetting agent successively with the flow velocity of 0.5 ~ 2.0L/min and help rumbling compound;
C, continue to add oxygenant and pH value regulator with the flow velocity of 0.5 ~ 2.0L/min, and adjust ph to 9.5 ~ 11, obtained finished product polishing fluid after purifying.
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| CN201510916851.5A CN105385357A (en) | 2015-12-11 | 2015-12-11 | Polishing solution for A orientation sapphire polishing, and preparation method thereof |
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| CN201510916851.5A CN105385357A (en) | 2015-12-11 | 2015-12-11 | Polishing solution for A orientation sapphire polishing, and preparation method thereof |
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Cited By (11)
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| CN106584230A (en) * | 2016-09-30 | 2017-04-26 | 惠州市德莱仕科技有限公司 | Glass scratch polishing agent and use method thereof, as well as polishing head for polishing agent |
| CN106700942A (en) * | 2016-11-18 | 2017-05-24 | 合肥师范学院 | Sapphire polishing composition and preparation method thereof |
| CN107189693A (en) * | 2017-05-12 | 2017-09-22 | 江南大学 | A kind of A is to sapphire chemically mechanical polishing polishing fluid and preparation method thereof |
| CN107541145A (en) * | 2017-09-20 | 2018-01-05 | 无锡市恒利弘实业有限公司 | A kind of green polishing Ludox and preparation method thereof |
| CN108219678A (en) * | 2016-12-21 | 2018-06-29 | 蓝思科技（长沙）有限公司 | A kind of diamond grinding fluid and preparation method thereof |
| CN108997940A (en) * | 2018-06-04 | 2018-12-14 | 上海映智研磨材料有限公司 | Chemical mechanical polishing liquid suitable for sapphire polishing |
| WO2019006673A1 (en) * | 2017-07-04 | 2019-01-10 | 深圳市长宏泰科技有限公司 | Polishing agent, stainless steel component, and surface polishing treatment method therefor |
| CN110003798A (en) * | 2019-05-20 | 2019-07-12 | 广东惠尔特纳米科技有限公司 | A kind of polishing fluid and its preparation method and application |
| CN110668451A (en) * | 2019-10-12 | 2020-01-10 | 临汾博利士纳米材料有限公司 | Preparation method of silicon dioxide sol and sapphire chemical mechanical polishing solution |
| CN111662642A (en) * | 2020-07-13 | 2020-09-15 | 万华化学集团股份有限公司 | Sapphire polishing composition and preparation method thereof |
| CN112680113A (en) * | 2020-12-29 | 2021-04-20 | 北京航天赛德科技发展有限公司 | Composition for sapphire double-sided polishing and preparation method and application thereof |
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