[go: up one dir, main page]

CN109444770A - A kind of magnetostriction materials and the compound low resistance resonant mode magnetoelectricity sensing unit of quartz tuning-fork - Google Patents

A kind of magnetostriction materials and the compound low resistance resonant mode magnetoelectricity sensing unit of quartz tuning-fork Download PDF

Info

Publication number
CN109444770A
CN109444770A CN201811380206.6A CN201811380206A CN109444770A CN 109444770 A CN109444770 A CN 109444770A CN 201811380206 A CN201811380206 A CN 201811380206A CN 109444770 A CN109444770 A CN 109444770A
Authority
CN
China
Prior art keywords
quartz tuning
fork
magnetostrictive layer
tuning fork
magnetoelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201811380206.6A
Other languages
Chinese (zh)
Inventor
卞雷祥
李大威
朱志伟
贾云飞
戎晓力
王明洋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanjing University of Science and Technology
Original Assignee
Nanjing University of Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanjing University of Science and Technology filed Critical Nanjing University of Science and Technology
Priority to CN201811380206.6A priority Critical patent/CN109444770A/en
Publication of CN109444770A publication Critical patent/CN109444770A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Magnetic Variables (AREA)

Abstract

The present invention proposes a kind of magnetostriction materials and the compound low resistance resonant mode magnetoelectricity sensing unit of quartz tuning-fork, include magnetostrictive layer and quartzy sound, the quartz tuning-fork is mounted on magnetostrictive layer, two of the quartz tuning-fork are interdigital to be parallel to each other, when deformation occurs under magnetic fields for magnetostrictive layer, the deformation, which is transferred to quartz tuning-fork, makes that resonance occurs to quartz tuning-fork, and two interdigital direction of vibration are opposite；An interdigital end secure bond with magnetostrictive layer in two interdigital engaging portions of the quartz tuning-fork and magnetostrictive layer secure bond or the quartz tuning-fork.The present invention is small in size, easy to make, at low cost, can be used for the high-sensitivity measurement in magnetic field.

Description

A kind of magnetostriction materials are sensitive with the compound low resistance resonant mode magnetoelectricity of quartz tuning-fork Unit
Technical field
The invention belongs to magnetoelectricity sensitive technology fields, and in particular to a kind of magnetostriction materials and high q-factor quartz tuning-fork are multiple Close low resistance resonant mode magnetoelectricity sensing unit.
Background technique
The magnetic field physical quantity basic as one, accurately measures it and is of great significance.Traditional magnetic field sensor Mainly there are Hall sensor, fluxgate sensor, superconducting quantum interference device (SQUID), giant magnetic impedance sensor, electromagnetic induction sensor, magnetic Quick diode Magnetic Sensor, magnetic sensitive transistor Magnetic Sensor etc..
Magnetostriction/piezo-electricity composite material has huge magnetoelectric effect, has in fields such as Magnetic Sensor, magneto-electric transducers wide General application prospect.Magnetoelectric effect is found to be present in single-phase magnetoelectric material Cr earliest2O3In, but its magnetoelectric effect is very micro- It is weak.Researchers' proposition is compound in a certain way with piezoelectric material by magnetostriction materials, and being obtained using product effect has magnetic It is compound, folded that particle mixed phase has been developed in magnetostriction/piezo-electricity composite material research process in the composite material of electrical effect Layer is compound, lateral compound, embedded a variety of complex methods such as compound.Magnetostriction/piezo-electricity composite material passes through magnetic-machine-thermocouple It closes, when excitation field frequency is close to its resonance frequency, magnetoelectric effect can be been significantly enhanced.Magnetoelectricity under this resonant state The characteristic that effect is significantly increased has a wide range of applications in magnetoelectric transducer and field of transducer.Theory analysis table It is bright, effective mechanical quality factor (Q value) of the magnetoelectric voltage coefficient of resonant mode magnetoelectricity composite magnetic field sensor and composite material at Direct ratio.On this basis, researchers are prepared for various resonant mode magnetic electric compound materials in succession.In fact, magnetostriction and pressure Under electric material lamination complex method, coupled between magnetostrictive layer and piezoelectric layer by straining realization, due to magnetostriction materials Itself there is the damping of high magnetomechanical, magnetostriction/Piezoelectric anisotropy structure effective Q value is limited.According to phenomenological theory and technology magnetic Change process influences since different magnetic field acts on lower domain motion characteristic, is difficult to find a kind of while having high pressure magnetic coefficient, high Q Value and magnetoelastic internal friction do not have the magnetostriction materials of dependence to magnetic field.Fortunately, there is the piezoelectric material of many high q-factor such as Quartz crystal, ZnO, AlN etc..
Summary of the invention
In view of this, the present invention proposes that a kind of low-loss, the resonant mode magnetoelectricity sensing unit of high q-factor, and magnetoelectricity are sensitive single Elementary volume is small, easy to make, at low cost, can be used for the high-sensitivity measurement in magnetic field.
In order to solve the above technical problem, the present invention provides a kind of magnetostriction materials and the compound low resistance of quartz tuning-fork are humorous Vibration formula magnetoelectricity sensing unit, comprising magnetostrictive layer and quartzy sound, the quartz tuning-fork is mounted on magnetostrictive layer, the stone Two of English tuning fork are interdigital to be parallel to each other, and when deformation occurs under magnetic fields for magnetostrictive layer, the deformation is transferred to stone English tuning fork makes that resonance occurs to quartz tuning-fork, and two interdigital direction of vibration are opposite.
Preferably, two interdigital engaging portions of the quartz tuning-fork and magnetostrictive layer secure bond.
Preferably, the magnetostrictive layer is strip, the region of the secure bond, which is located at, states magnetostrictive layer side The middle part in face.
Preferably, the engaging portion formation plane that the quartz tuning-fork two is interdigital, the plane whole and magnetostrictive layer In conjunction with.
Preferably, an interdigital end secure bond with magnetostrictive layer in the quartz tuning-fork.
Preferably, the magnetostrictive layer is the interdigital shape in strip, end shape and size and quartz tuning-fork Shape and size are adapted, and an interdigital side in the quartz tuning-fork is all in conjunction with the end of magnetostrictive layer.
Preferably, the quartz tuning-fork is fixed on magnetostrictive layer by epoxy resin AB glue.
Preferably, the magnetostrictive layer is cut by one of Terfenol-D, FeGa alloy or FeCo alloy material It cuts.
Preferably, the magnetostrictive layer polarizes along longitudinal direction.
Compared with prior art, the present invention its remarkable advantage is:
(1) the magnetostriction materials proposed by the invention magnetoelectricity sensing unit structure compound with quartz tuning-fork is simple, body Product is small, and quartz tuning-fork is to obtain after commercial crystal oscillator removes package casing, at low cost, suitable for mass production.
(2) in magnetostriction materials proposed by the invention and the compound magnetoelectricity sensing unit of quartz tuning-fork, quartz tuning-fork Two it is interdigital be parallel to each other, due to two interdigital direction of vibration on the contrary, the ess-strain and torque phase of bottom bond area It mutually offsets, is actually formed stress/strain decoupling region；The present invention will decouple region fixed to magnetostriction materials, magnetostriction Damping is isolated, and this compound resonant mode magnetoelectricity sensing unit has high Q value.
Detailed description of the invention
Fig. 1 is a kind of embodiment schematic diagram of magnetoelectricity sensing unit of the present invention.
Fig. 2 is the another embodiment schematic diagram of magnetoelectricity sensing unit of the present invention.
Specific embodiment
It is readily appreciated that, technical solution according to the present invention, in the case where not changing connotation of the invention, this field Those skilled in the art can imagine numerous embodiments of the invention.Therefore, following specific embodiments and attached drawing are only To the exemplary illustration of technical solution of the present invention, and it is not to be construed as whole of the invention or is considered as to the technology of the present invention side The limitation or restriction of case.
Magnetostriction materials proposed by the present invention and the compound low resistance resonant mode magnetoelectricity sensing unit of quartz tuning-fork include magnetic Stretchable layer, quartz tuning-fork are caused, it is using epoxy resin AB glue that quartz tuning-fork is Nian Jie with magnetostrictive layer compound.The magnetoelectricity is sensitive single Magnetic-machine-electricity conversion process of member can regard a forced vibration process as.Under action of alternating magnetic field, magnetostriction materials due to Magnetostrictive effect and occur it is flexible form mechanical force, magnetostriction mechanical force is transmitted to quartz tuning-fork and forces tuning fork vibration, After the acquisition and processing of back-end circuit, electric signal is formed.When the frequency of alternating magnetic field is consistent with the resonance frequency of quartz tuning-fork, The Oscillation Amplitude of quartz tuning-fork is maximum.Since the piezomagnetic coefficient of magnetostriction materials changes with the variation of bias magnetic field, Correspondingly, under different bias magnetic field effects, the magnetostrictive force on quartz tuning-fork is transmitted to regard to different, the output of tuning fork is electric Stream can also generate variation.The magnetostriction materials use the material with magnetostrictive effect to cut, and such as super mangneto is stretched Compression material Terfenol-D, FeGa alloy, FeCo alloy etc., polarization direction polarizes along longitudinal direction.The present invention uses quartz tuning-fork, tool There is the low-loss advantage of high q-factor, can be used for the highly sensitive detection in magnetic field.
Embodiment 1
In conjunction with Fig. 1, the magnetostriction materials and the compound magnetoelectricity sensing unit of quartz tuning-fork are by magnetostrictive layer 1 and stone English tuning fork 2 forms.When preparing magnetoelectricity sensing unit, the stress/strain of quartz tuning-fork is decoupled by region using epoxy resin AB glue It is bonded in the center of magnetostrictive layer, stands 24 hours, reaches working strength to the solid cooling of epoxide resin AB gelling.
The magnetostrictive layer 1 is cut using the material with magnetostrictive effect, such as giant magnetostrictive material Terfenol-D, FeGa alloy, FeCo alloy etc..
The quartz tuning-fork 2 is made using the quartz plate of X cut type, and two of quartz tuning-fork are interdigital to be parallel to each other, by In two interdigital direction of vibration on the contrary, the ess-strain and torque of bottom bond area are cancelled out each other, to form stress/answer Become decoupling region, cancels out each other, be lost minimum in decoupling regional stress/strain.The present embodiment will decouple region and be fixed to mangneto Stretchable layer, it is minimum on the influence of the Q value of magnetoelectricity sensing unit, and quartz tuning-fork Q value with higher, it is at low cost, it is suitble to batch raw It produces.
The magnetoelectricity sensing unit under action of alternating magnetic field, stretched due to magnetostrictive effect by magnetostriction materials Contracting, magnetostrictive force is transmitted to quartz tuning-fork and forces tuning fork vibration, magnetic-machine-electricity conversion process of the device can regard as one by Compel vibration processes, when the frequency of alternating magnetic field is consistent with the resonance frequency of quartz tuning-fork, the Oscillation Amplitude of quartz tuning-fork is maximum. Since the piezomagnetic coefficient of magnetostrictive layer changes with the variation of bias magnetic field, correspondingly, under different bias magnetic field effects, The magnetostrictive force on quartz tuning-fork is transmitted to regard to different, the output electric current of tuning fork can also generate variation, measure different inclined The current output value for setting quartz tuning-fork under magnetic fields can achieve the purpose that magnetic field detection by theoretical formula conversion.
Embodiment 2
Fig. 2 is the another embodiment of magnetoelectricity sensing unit of the present invention, and the magnetostrictive layer and quartz tuning-fork are compound Magnetoelectricity sensing unit be made of magnetostrictive layer 1, quartz tuning-fork 2.Unlike the first embodiment, a fork of quartz tuning-fork Finger is secured entirely on magnetostriction materials one end (left or right), that is, is fixed on the end of magnetostrictive layer 1.In alternating magnetic field It acts on lower magnetostrictive layer 1 and generates and stretch, magnetostrictive force, which is transmitted on quartz tuning-fork 2, forces quartz tuning-fork to generate vibration, magnetic Magnetic-machine-electricity conversion process of electric sensing unit can regard a forced vibration process as.When the frequency and quartz of alternating excitation magnetic field When the resonance frequency of tuning fork is consistent, the Oscillation Amplitude of quartz tuning-fork reaches maximum.Different bias magnetic fields act on lower magnetostriction material Expect that the magnetostrictive force generated is different, correspondingly, the power being transmitted on quartz tuning-fork is different and generates different electric current output.
The present invention uses interdigital work compound in the quartz tuning-fork resonator and magnetostriction materials of beam mode, stone Two of English tuning fork are interdigital to be parallel to each other, due to two interdigital direction of vibration on the contrary, the ess-strain of bottom bond area and Torque is cancelled out each other, and stress/strain decoupling region is actually formed.Have benefited from the decoupling-structure and complex method of tuning fork resonator, Magnetostriction damping is isolated, and this compound resonant mode magnetoelectricity sensing unit has high Q value, and magnetoelectricity is imitated under resonant state It should be enhanced.

Claims (9)

1.一种磁致伸缩材料与石英音叉复合低阻尼谐振式磁电敏感单元，其特征在于，包含磁致伸缩层和石英音，所述石英音叉安装在磁致伸缩层上，所述石英音叉的两根叉指相互平行，当磁致伸缩层在磁场作用下发生形变时，所述形变传递至石英音叉使至石英音叉发生谐振，且两根叉指的振动方向相反。1. a magnetostrictive material and a quartz tuning fork composite low damping resonance type magnetoelectric sensitive unit, it is characterized in that, comprise magnetostrictive layer and quartz tone, described quartz tuning fork is installed on the magnetostrictive layer, described quartz tuning fork The two fingers are parallel to each other. When the magnetostrictive layer is deformed under the action of the magnetic field, the deformation is transmitted to the quartz tuning fork to resonate, and the vibration directions of the two fingers are opposite. 2.如权利要求1所述的磁电敏感单元，其特征在于，所述石英音叉两根叉指的结合部与磁致伸缩层固定结合。2 . The magnetoelectric sensitive unit according to claim 1 , wherein the joint portion of the two fingers of the quartz tuning fork is fixedly combined with the magnetostrictive layer. 3 . 3.如权利要求2所述的磁电敏感单元，其特征在于，所述磁致伸缩层为长条形，所述固定结合的区域位于述磁致伸缩层一侧面的中部。3 . The magnetoelectric sensitive unit according to claim 2 , wherein the magnetostrictive layer is in the shape of a long strip, and the fixedly combined region is located in the middle of one side surface of the magnetostrictive layer. 4 . 4.如权利要求2所述的磁电敏感单元，其特征在于，所述石英音叉两根叉指的结合部形成平面，所述平面全部与磁致伸缩层结合。4 . The magnetoelectric sensitive unit according to claim 2 , wherein the joint portion of the two fingers of the quartz tuning fork forms a plane, and the plane is all combined with the magnetostrictive layer. 5 . 5.如权利要求1所述的磁电敏感单元，其特征在于，所述石英音叉中的一根叉指与磁致伸缩层的端部固定结合。5 . The magnetoelectric sensitive unit according to claim 1 , wherein one finger of the quartz tuning fork is fixedly combined with the end of the magnetostrictive layer. 6 . 6.如权利要求5所述的磁电敏感单元，其特征在于，所述磁致伸缩层为长条形，其端部形状和大小与石英音叉中的叉指的形状和大小相适应，所述石英音叉中的一根叉指的侧面全部与磁致伸缩层的端部结合。6. The magneto-electric sensitive unit according to claim 5, wherein the magnetostrictive layer is a long strip, and the shape and size of its end are adapted to the shape and size of the fingers in the quartz tuning fork, so the The side surfaces of one finger in the quartz tuning fork are all combined with the end of the magnetostrictive layer. 7.如权利要求1至6中任意一项所述的磁电敏感单元，其特征在于，所述石英音叉通过环氧树脂AB胶固定在磁致伸缩层上。7 . The magnetoelectric sensitive unit according to claim 1 , wherein the quartz tuning fork is fixed on the magnetostrictive layer by epoxy resin AB glue. 8 . 8.如权利要求1至6中任意一项所述的磁电敏感单元，其特征在于，所述磁致伸缩层由Terfenol-D、FeGa合金或者FeCo合金中的一种材料切割而成。8 . The magnetoelectric sensitive unit according to claim 1 , wherein the magnetostrictive layer is cut from a material selected from Terfenol-D, FeGa alloy or FeCo alloy. 9 . 9.如权利要求1至6中任意一项所述的磁电敏感单元，其特征在于，所述磁致伸缩层沿纵向极化。9. The magnetoelectric sensitive unit according to any one of claims 1 to 6, wherein the magnetostrictive layer is longitudinally polarized.
CN201811380206.6A 2018-11-20 2018-11-20 A kind of magnetostriction materials and the compound low resistance resonant mode magnetoelectricity sensing unit of quartz tuning-fork Pending CN109444770A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811380206.6A CN109444770A (en) 2018-11-20 2018-11-20 A kind of magnetostriction materials and the compound low resistance resonant mode magnetoelectricity sensing unit of quartz tuning-fork

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201811380206.6A CN109444770A (en) 2018-11-20 2018-11-20 A kind of magnetostriction materials and the compound low resistance resonant mode magnetoelectricity sensing unit of quartz tuning-fork

Publications (1)

Publication Number Publication Date
CN109444770A true CN109444770A (en) 2019-03-08

Family

ID=65552596

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811380206.6A Pending CN109444770A (en) 2018-11-20 2018-11-20 A kind of magnetostriction materials and the compound low resistance resonant mode magnetoelectricity sensing unit of quartz tuning-fork

Country Status (1)

Country Link
CN (1) CN109444770A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110118947A (en) * 2019-04-19 2019-08-13 华中科技大学 A kind of magnetic sensing device
CN110118946A (en) * 2019-04-19 2019-08-13 华中科技大学 A kind of resonant mode Magnetic Sensor
CN111504442A (en) * 2020-04-27 2020-08-07 天津恒立远大仪表股份有限公司 Tuning fork switch probe structure
CN112213671A (en) * 2020-09-16 2021-01-12 中国科学院合肥物质科学研究院 A device and method for measuring magnetostrictive effect

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101609130A (en) * 2009-07-14 2009-12-23 重庆大学 Magnetostrictive material and quartz tuning fork composite magnetic sensor using connecting rod
CN101609131A (en) * 2009-07-14 2009-12-23 重庆大学 Magnetostrictive material, high magnetic permeability material and quartz tuning fork composite magnetic sensor
CN103698407A (en) * 2013-12-16 2014-04-02 杭州浙大精益机电技术工程有限公司 Magnetostrictive twist guided wave sensor for rail bottom defect detection
CN205562088U (en) * 2016-05-03 2016-09-07 成都皆为科技有限公司 Quartzy resonance power of integral type is sensing element and dynamometry module frequently
CN108205118A (en) * 2016-12-19 2018-06-26 南京理工大学 A kind of mode of resonance Magnetic Sensor sensing unit and numerical frequency output Magnetic Sensor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101609130A (en) * 2009-07-14 2009-12-23 重庆大学 Magnetostrictive material and quartz tuning fork composite magnetic sensor using connecting rod
CN101609131A (en) * 2009-07-14 2009-12-23 重庆大学 Magnetostrictive material, high magnetic permeability material and quartz tuning fork composite magnetic sensor
CN103698407A (en) * 2013-12-16 2014-04-02 杭州浙大精益机电技术工程有限公司 Magnetostrictive twist guided wave sensor for rail bottom defect detection
CN205562088U (en) * 2016-05-03 2016-09-07 成都皆为科技有限公司 Quartzy resonance power of integral type is sensing element and dynamometry module frequently
CN108205118A (en) * 2016-12-19 2018-06-26 南京理工大学 A kind of mode of resonance Magnetic Sensor sensing unit and numerical frequency output Magnetic Sensor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110118947A (en) * 2019-04-19 2019-08-13 华中科技大学 A kind of magnetic sensing device
CN110118946A (en) * 2019-04-19 2019-08-13 华中科技大学 A kind of resonant mode Magnetic Sensor
CN111504442A (en) * 2020-04-27 2020-08-07 天津恒立远大仪表股份有限公司 Tuning fork switch probe structure
CN112213671A (en) * 2020-09-16 2021-01-12 中国科学院合肥物质科学研究院 A device and method for measuring magnetostrictive effect
CN112213671B (en) * 2020-09-16 2023-11-03 中国科学院合肥物质科学研究院 A device and method for measuring magnetostrictive effect

Similar Documents

Publication Publication Date Title
CN109444770A (en) A kind of magnetostriction materials and the compound low resistance resonant mode magnetoelectricity sensing unit of quartz tuning-fork
CN101430369B (en) Self-generating broadband laminated magneto-inducible piezoelectric effect AC magnetic field sensor and manufacturing method
Ogi et al. Elastic, anelastic, and piezoelectric coefficients of langasite: Resonance ultrasound spectroscopy with laser-Doppler interferometry
CN102937705B (en) Direct-current magnetic sensor with composite structure
CN101504446B (en) Thin film type structural magnetofluid-sonic surface wave integrated magnetic transducer
CN206178120U (en) Reduce magnetism electric sensor sensing element of vibration noise
Guo et al. A resonance-bending mode magnetoelectric-coupling equivalent circuit
Li et al. Wide-bandwidth high-sensitivity magnetoelectric effect of magnetostrictive/piezoelectric composites under adjustable bias voltage
Cai et al. Finite element analysis and optimization of acoustically actuated magnetoelectric microantennas
Zhou et al. Symmetric relationships between direct and converse magnetoelectric effects in laminate composites
Lu et al. Large self-biased magnetoelectric properties in heterostructure of graded-magnetostrictive layers and a Rosen-type piezoelectric transformer
Fetisov et al. Magnetoelectric effect in amorphous FeNiSiC ferromagnet-piezoelectric planar structures
CN106199462A (en) A kind of magnetoelectric transducer sensing element reducing vibration noise
CN110988756A (en) Differential resonant magnetic sensor adopting double-magnetostrictive-unit magnetic circuit structure
Huang et al. MEMS surface acoustic wave resonator based on AlN/Si/Fe–Co–Si–B structure for magnetic field sensing
Bian et al. Composite Magnetoelectric Transducer of Terfenol-D and Pb (Zr, Ti) O $ _ {3} $ Plates Bonded on an Elastic Substrate
Wu et al. Highly sensitive magneto-mechano-electric magnetic field sensor based on torque effect
Bian et al. Magnetoelectric performances in composite of piezoelectric ceramic and ferromagnetic constant-elasticity alloy
Wu et al. Self-biased magnetoelectric sensor operating in d 36 face-shear mode
CN110389386A (en) High-Q magnetoelectric metamaterial structures for geomagnetic field measurements
Chen et al. Modeling of magnetic sensor based on BAW magnetoelectric coupling micro-heterostructure
CN110391330A (en) Composite magnetoelectric transducer unit based on magnetostrictive force coupling
Perov et al. Resonant magnetoelectric interaction in asymmetric bimorphous ferromagnetic-ferroelectric structure
Chen et al. Enhanced magnetoelectric effects in laminate composites ofTerfenol-D/Pb (Zr, TiO) 3 with high-permeability FeCuNbSiB ribbon
Wang et al. Multiferroic Magnetic Sensor Based on AlN and Al 0.7 Sc 0.3 N thin film $ S$

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
CB03 Change of inventor or designer information
CB03 Change of inventor or designer information

Inventor after: Bian Leixiang

Inventor after: Li Dawei

Inventor after: Zhu Zhiwei

Inventor after: Jia Yunfei

Inventor after: Rong Xiaoli

Inventor before: Bian Leixiang

Inventor before: Li Dawei

Inventor before: Zhu Zhiwei

Inventor before: Jia Yunfei

Inventor before: Rong Xiaoli

Inventor before: Wang Mingyang

RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20190308