CN108760148B - Absolute pressure type optical fiber Fabry-Perot silicon carbide high-temperature resistant aviation pressure sensor - Google Patents
Absolute pressure type optical fiber Fabry-Perot silicon carbide high-temperature resistant aviation pressure sensor Download PDFInfo
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Abstract
本发明公开了一种绝压式光纤法珀碳化硅耐高温航空压力传感器，该传感器中的传感头采用碳化硅传感膜片和碳化硅基板的全SiC结构，通过直接键合实现真空法珀腔结构；本发明传感器包括有碳化硅传感膜片、碳化硅基板、氧化锆基座、光纤、钼制封装座和钼制封装体；所述SiC传感膜片与SiC基板安装在氧化锆基座的下方，光纤的一端粘接在SiC基板上，氧化锆基座安装在钼制封装座的沉头腔中，钼制封装座的下方螺纹连接有钼制封装体；光纤的另一端穿过钼制封装座上的B中心通孔。本发明适用于航空发动机高温区动态压力和流场特性的原位实时测量，具有微型化、精度高、抗电磁干扰等优点。
The invention discloses an absolute pressure optical fiber Farber silicon carbide high-temperature-resistant aviation pressure sensor. The sensor head in the sensor adopts a full SiC structure of a silicon carbide sensing diaphragm and a silicon carbide substrate, and a vacuum method is realized by direct bonding. Perovskite cavity structure; the sensor of the present invention includes a silicon carbide sensing diaphragm, a silicon carbide substrate, a zirconia base, an optical fiber, a molybdenum packaging seat and a molybdenum packaging body; the SiC sensing diaphragm and the SiC substrate are mounted on the oxide Below the zirconium base, one end of the optical fiber is bonded to the SiC substrate, the zirconia base is installed in the countersunk cavity of the molybdenum package seat, and the molybdenum package body is threadedly connected with the molybdenum package body; the other end of the fiber Through the B center via on the molybdenum package base. The invention is suitable for the in-situ real-time measurement of the dynamic pressure and flow field characteristics in the high temperature region of the aero-engine, and has the advantages of miniaturization, high precision, anti-electromagnetic interference and the like.
Description
Technical Field
The invention relates to a pressure sensor, in particular to an absolute pressure type optical fiber Fabry-Perot silicon carbide high-temperature-resistant pressure sensor, and belongs to the technical field of manufacturing of aviation pressure sensors.
Background
The aircraft engine technology is known as 'pearl on crown' in modern industry, is an important mark of national science and technology, industry, economy and national defense strength, and the performance of the aircraft is determined by the performance of the aircraft. With the development of the aircraft engine towards high supercharging ratio, high turbine inlet temperature, high thrust-weight ratio and high reliability, how to realize the measurement of the dynamic pressure and flow field characteristics of the high temperature region of the aircraft engine under the complicated and changeable conditions so as to further master the change rule of the dynamic pressure and flow field characteristics is very important for realizing the control and regulation of the engine. However, the working temperature of the combustion chamber of the aircraft engine and other areas is higher than 1000 ℃, and the dynamic monitoring of the pressure change cannot be realized by the currently generally adopted indirect measurement mode of arranging the pressure sensor in the low-temperature area. Therefore, a new high temperature resistant pressure sensor capable of stably working in a high temperature environment is urgently needed to be researched and developed.
Disclosure of Invention
In order to adapt to the measurement of the dynamic pressure and the flow field characteristic of a high-temperature region of an aeroengine, the invention designs an absolute pressure type optical fiber Fabry-Perot silicon carbide high-temperature resistant aeronautical pressure sensor. The invention designs a sensing head with an all-SiC structure, the lower surface of a SiC substrate is provided with a blind hole, the internal vacuum degree of a Fabry-Perot cavity is completed by bonding, and the deformation of a sensitive part after bearing pressure is carried out by utilizing a sapphire optical fiber to conduct and modulate signals, so that the sensing head has no requirement on the vacuum degree in the packaging operation environment. The full SiC structure sensing head is prepared by adopting a plasma etching etch-back (DRIE) processing technology. The high-temperature-resistant aviation pressure sensor of the full SiC structure sensing head has the characteristics of high temperature resistance, high precision, high response speed, electromagnetic interference resistance and the like, and can realize in-situ pressure measurement in high-temperature environments with the temperature of over 1000 ℃ in high-temperature regions such as an aircraft engine combustion chamber.
The invention relates to an absolute pressure type optical fiber Fabry-Perot silicon carbide high-temperature resistant aviation pressure sensor, which comprises a sensing head and is characterized in that: the sensing head is of a full SiC structure;
the full SiC structure sensing head is composed of a silicon carbide sensing diaphragm (1) and a silicon carbide substrate (2);
the upper panel A (1A) of the silicon carbide sensing diaphragm (1) is a smooth surface, and the center of the lower panel A (1B) of the SiC sensing diaphragm (1) is provided with a blind hole A (1C);
the upper panel B (2A) of the silicon carbide substrate (2) is a smooth surface, and a blind hole C (2D) is formed in the center of the upper panel B (2A); a blind hole B (2C) is formed in the center of a lower panel B (2B) of the silicon carbide substrate (2);
the interval between the blind hole A (1C) and the blind hole B (2C) is a sensitive part (1D).
The invention discloses an absolute pressure type optical fiber Fabry-Perot silicon carbide high-temperature resistant aviation pressure sensor according to claim 1, which is characterized in that: and a photonic crystal optical microstructure is processed on the panel A (1A) on the SiC sensing diaphragm (1).
The invention discloses an absolute pressure type optical fiber Fabry-Perot silicon carbide high-temperature resistant aviation pressure sensor, which is characterized in that: the pressure-insulating optical fiber Fabry-Perot silicon carbide high-temperature resistant aviation pressure sensor comprises a silicon carbide sensing diaphragm (1), a silicon carbide substrate (2), a zirconia base (3), an optical fiber (4), a molybdenum packaging seat (5) and a molybdenum packaging body (6); the SiC sensing diaphragm (1) and the SiC substrate (2) are arranged below the zirconia base (3), one end of the optical fiber (4) is bonded on the SiC substrate (2), the zirconia base (3) is arranged in a countersunk cavity (5C) of the molybdenum packaging seat (5), and a molybdenum packaging body (6) is in threaded connection with the lower part of the molybdenum packaging seat (5); the other end of the optical fiber (4) passes through a center through hole (5A) B on the molybdenum packaging seat (5);
the SiC sensing diaphragm (1) can cause the deformation of a sensitive part (1D) when a pressure acts on the outside;
the SiC substrate (2) is respectively provided with a cavity and an optical fiber positioning blind hole;
the optical fiber (4) is connected with the SiC substrate (2) and is used for transmitting optical signals.
The absolute pressure type optical fiber Fabry-Perot silicon carbide high-temperature resistant aviation pressure sensor has the following beneficial effects:
① the full SiC sensing head designed by the invention is formed by stacking and directly bonding a silicon carbide sensing diaphragm and a silicon carbide substrate to obtain a vacuum Fabry-Perot cavity and a sensitive part which can deform after being pressed, and the spectral signal is conducted through a sapphire optical fiber to realize pressure measurement in a high-temperature environment.
② the sensor head provided by the invention is a full SiC structure, each part has the same thermal expansion coefficient and thermal conductivity coefficient, thus avoiding the failure condition caused by the difference of the thermal expansion coefficients, and having good reliability and low temperature drift characteristic.
③ the junction of the SiC substrate and the sapphire optical fiber is a blind hole, the vacuum degree in the Fabry-Perot cavity is ensured by the bonding process, and the requirement of vacuum degree on the packaging operation environment is avoided.
④ the invention has simple structure, high measurement accuracy and high anti-interference ability.
Drawings
Fig. 1 is an external structural view of the absolute pressure type optical fiber Fabry-Perot silicon carbide high-temperature resistant aviation pressure sensor.
Fig. 1A is an assembly diagram of a sensing head in the absolute pressure type optical fiber fabry-perot silicon carbide high-temperature resistant aviation pressure sensor.
Fig. 1B is an assembly diagram of a sensing head and a zirconia base of the absolute pressure type optical fiber fabry-perot silicon carbide high-temperature resistant aviation pressure sensor.
Fig. 1C is an exploded view of the absolute pressure type fiber fabry-perot silicon carbide high temperature resistant aircraft pressure sensor of the present invention.
Fig. 2 is an external structure view of the absolute pressure type optical fiber fabry-perot silicon carbide high-temperature resistant aviation pressure sensor without the optical fiber.
Fig. 2A is a cross-sectional view a-a of fig. 2.
Fig. 3 is a top view structural view of the SiC sensing diaphragm of the present invention.
Fig. 3A is a bottom view of the SiC sensing diaphragm of the present invention.
Fig. 3B is a plan view of the silicon carbide substrate of the present invention.
Fig. 3C is a bottom view of the silicon carbide substrate of the present invention.
Fig. 3D is a cross-sectional view of the SiC sensing diaphragm and the silicon carbide substrate of the present invention.
Fig. 4 is an exploded view of another pressure-insulated fiber fabry-perot silicon carbide high-temperature resistant aircraft pressure sensor of the present invention.
Fig. 5 is a structural view of the molybdenum package base of the present invention.
Fig. 5A is another perspective view of the molybdenum package base of the present invention.
Fig. 5B is a bottom view of the molybdenum package base of the present invention.
Fig. 5C is a cross-sectional view of the molybdenum package base of the present invention.
FIG. 6 is a structural view of a zirconia base of the present invention.
Fig. 7(a) to 7(e) are flow charts of processes for manufacturing the SiC sensing diaphragm according to the present invention.
Fig. 8(a) to 8(j) are flowcharts of a process for producing a SiC substrate according to the present invention.
Figure 9 is a graph of the Fabry Perot chamber sensitivity performance with pressure of the present invention.
FIG. 10 is a graph of the sensitivity performance of the present invention for center wavelength versus pressure.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Referring to fig. 1, 1C, 2A and 4, the absolute pressure type optical fiber fabry-perot silicon carbide high temperature resistant aviation pressure sensor of the present invention includes a silicon carbide sensing diaphragm 1, a silicon carbide substrate 2, a zirconia base 3, an optical fiber 4, a molybdenum package base 5 and a molybdenum package body 6. In which a silicon carbide sensing diaphragm 1 and a silicon carbide substrate 2 constitute a sensing head of a full SiC structure as shown in fig. 1A. The SiC sensing diaphragm 1 and the SiC substrate 2 are arranged below the zirconia base plate 3, one end of the optical fiber 4 is bonded on the SiC substrate 2, the zirconia base plate 3 is arranged in a countersunk cavity 5C of the molybdenum packaging seat 5, and a molybdenum packaging body 6 is connected below the molybdenum packaging seat 5 in a threaded manner; the other end of the optical fiber 4 passes through a center through hole 5A of a molybdenum package base 5B. In the invention, the molybdenum package base 5 and the molybdenum package body 6 are used for mounting the sensing head with the full SiC structure on one hand and fixing the sensing head with a part in a high-temperature region of an aircraft engine on the other hand. The optical fiber 4 is connected with the SiC substrate 2 and is used for transmitting optical signals; when pressure is applied to the outside, the SiC sensing diaphragm 1 causes deformation of the sensitive portion 1D.
Silicon carbide sensing diaphragm 1
Referring to fig. 1A, 1C, 2A, 3A, 3D, and 4, the SiC sensing diaphragm 1 has a (circular or rectangular) sheet structure. An upper panel 1A of the SiC sensing diaphragm 1 is a smooth surface, and a blind hole 1C is formed in the center of a lower panel 1B of the SiC sensing diaphragm 1. The spacing thickness between the blind hole A1C and the upper panel A1A is the sensitive part 1D after the SiC sensing diaphragm 1 and the silicon carbide substrate 2 are bonded. In the invention, a micro-nano crystal structure can be processed on the sensitive part 1D in order to improve the sensitivity.
Referring to fig. 3D, the thickness of the sensitive unit 1D of the SiC sensing diaphragm 1 is denoted as h1And the radius of the A blind hole 1C of the SiC sensing diaphragm 1 is recorded as r1Then there is, h1＝10～50μm，r1＝250～1500μm。
In the invention, when a pressure is applied to a sensing unit 1D of the SiC sensing diaphragm 1 from the outside, the sensing unit 1D can cause the deformation of the SiC sensing diaphragm 1 for sensing the outside pressure.
The method for processing the SiC sensing diaphragm 1 comprises the following steps:
(A) manufacturing a SiC sensing diaphragm 1 by adopting an ultrasonic milling and grinding processing technology; the Ultrasonic milling and grinding process refers to the Ultrasonic milling mill-grinding of single-crystal silicon carbide for pressure sensor diaphragmams published in 11, 12.2017, and the author Jiang Yonggang, journal of China. The translation of "Ultrasonic vibration mill-grinding of single-crystal silicon carbide for pressure sensor diaphragmas" is the "Ultrasonic milling technique of single-crystal silicon carbide facing the pressure sensing diaphragm".
(B) Manufacturing a SiC sensing diaphragm 1 by adopting a plasma etching process; in the present invention, a silicon carbide wafer, that is, the first silicon carbide substrate 100 is selected as the substrate for manufacturing the SiC sensing diaphragm 1, an upper portion of the first silicon carbide substrate 100 is denoted as an upper surface 100A, and a lower portion of the first silicon carbide substrate 100 is denoted as a lower surface 100B, and different structures are manufactured on the upper surface 100A and the lower surface 100B, respectively, which will be described, as shown in fig. 7(a) to 7(e), the steps of the plasma etching processing are respectively described:
101, ultrasonically cleaning a first silicon carbide substrate 100 by absolute ethyl alcohol and acetone in sequence, and then cleaning the first silicon carbide substrate by RCA1 and RCA2 solutions to obtain a clean silicon carbide wafer; the RCA1 solution is ammonia water, hydrogen peroxide and deionized water in a ratio of 1:1: 5; the RCA2 solution is hydrochloric acid (mass percentage concentration is 35-38) and hydrogen peroxide and deionized water in a ratio of 1:1: 6.
103, sputtering metal Ni on the AA substrate to be treated by adopting a magnetron sputtering process to form a metal nickel layer 102, namely obtaining the AB substrate to be treated, as shown in fig. 7 (b);
step 104, stripping off the first photoresist configuration 101 by using an organic solvent to obtain an AC matrix to be processed, and a graphical metal Ni mask shown in fig. 7 (c);
105, etching the AC substrate to be processed by utilizing a plasma reactive deep etching processing (DRIE) technology, wherein the used gas component is SF6/O2Etching with the etching power of 500-1000W to obtain an AD substrate to be processed, wherein a first blind hole 103 structure is formed in the AD substrate to be processed as shown in FIG. 7 (d);
and 106, removing the residual metal Ni mask (the first metal nickel layer 102) on the AD substrate to be processed by acid washing to obtain the SiC sensing diaphragm 1, wherein the step is shown in fig. 7 (e).
In the invention, in order to realize the reflection characteristic of the sensitive part, a photonic crystal structure can be processed on the panel 1A on the panel a of the SiC sensing diaphragm 1 to further improve the sensitivity of the sensor.
A photonic crystal structure is designed at a sensitive part 1D of the SiC sensing diaphragm 1:
step a, carrying out ultrasonic cleaning on the AE matrix to be treated after the step 106 by absolute ethyl alcohol and acetone in sequence, and then cleaning in RCA1 and RCA2 solutions to obtain a clean AF matrix to be treated; the RCA1 solution is ammonia water: hydrogen peroxide: deionized water 1:1: 5; the RCA2 solution is hydrochloric acid (mass percentage concentration is 35-38): hydrogen peroxide: deionized water 1:1: 6.
Step b, uniformly spin-coating photoresist on the upper surface 100A of the clean AF matrix to be processed, fully coating the photoresist, performing dot matrix patterned photoetching, removing the photoresist outside the upper panel pattern, and leaving a patterned photoresist configuration to obtain an AG matrix to be processed;
c, sputtering metal Ni on the AG substrate to be treated by adopting a magnetron sputtering process to form a metal nickel layer, thus obtaining an AH substrate to be treated;
d, stripping off the photoresist configuration by using an organic solvent to obtain the AI substrate to be processed with the graphical metal Ni mask;
e, etching the AI substrate to be treated by utilizing a plasma reactive etching (DRIE) processing technology, wherein the used gas component is SF6/O2, the etching power is 300-500W, and etching is carried out to obtain the AJ substrate to be treated;
and f, removing the remaining patterned metal Ni mask on the AJ substrate to be processed by acid washing to obtain the SiC sensing diaphragm 1 with the photonic crystal structure on the upper panel and the blind hole structure on the lower panel.
Referring to fig. 1A, 1C, 2A, 3B, 3C, 3D, and 4, the silicon carbide substrate 2 has a (circular or rectangular) sheet structure. The upper panel 2A of the silicon carbide substrate 2B is a smooth surface, and a blind hole 2D C is formed in the center of the upper panel 2A; one end of the optical fiber 4 is fixed in the blind hole C2D by using high-temperature-resistant ceramic glue; a blind hole (B) 2C is provided in the center of a lower panel (B) 2B of the silicon carbide substrate 2.
Referring to FIG. 3D, the depth of the blind hole 2C in the silicon carbide substrate 2 is denoted by h2Then there is, h2＝20～80μm。
The SiC substrate 2 is processed by:
in the present invention, a silicon carbide wafer, that is, a second silicon carbide substrate 200 is selected as a base material for producing the SiC substrate 2, an upper side of the second silicon carbide substrate 200 is referred to as an upper surface 200A, and a lower side of the second silicon carbide substrate 200 is referred to as a lower surface 200B, and different structures are produced on the upper surface 200A and the lower surface 200B, respectively. The steps of forming the fabry-perot cavity on the lower surface 200B of the silicon carbide wafer 200 shown in fig. 8(a) to 8(e) are:
205, etching the BC substrate to be processed by utilizing a plasma etch back process (DRIE) technology, wherein the gas component is SF6/O2Etching with the etching power of 500-1000W to obtain a BD substrate to be processed, wherein a blind hole 203 structure is formed on the BD substrate to be processed as shown in FIG. 8 (d);
The steps of forming the optical fiber mounting hole in the upper surface 200A of the silicon carbide substrate 200 shown in fig. 8(f) to 8(j) are:
step 207, uniformly spin-coating photoresist on the other surface of the BE substrate to BE processed (i.e., the upper surface 200A of the clean silicon carbide wafer 200) and performing photoetching, removing the photoresist on the periphery of the upper panel, and leaving a third photoresist configuration 204 at the central part to obtain the BF substrate to BE processed, as shown in FIG. 8 (f);
step 208, sputtering metal Ni on the BF matrix to be processed by adopting a magnetron sputtering process to form a third metal nickel layer 205, namely obtaining the BG matrix to be processed, as shown in figure 8 (g);
209, etching the BG substrate to be treated by using a plasma etch back processing (DRIE) technique with a gas composition of SF6/O2Etching with the etching power of 500-1000W to obtain a BH substrate to be processed, wherein a blind hole 206 structure exists on the BH substrate to be processed as shown in FIG. 8 (h);
step 210, removing the residual metal Ni mask (the third metal nickel layer 205) on the BH substrate to be processed by acid washing to obtain a BI substrate to be processed, wherein as shown in fig. 8(i), a blind hole structure on the BI substrate to be processed is a C blind hole 2D of the SiC substrate 2, and the C blind hole 2D is used for realizing the bonding of one end of the optical fiber 4 through high-temperature ceramic glue.
Bonding of the SiC sensor chip 1 to the SiC substrate 2:
step 1: polishing an A upper panel 1A (namely a surface to be bonded) of the SiC sensing diaphragm 1 by using chemical mechanical polishing until the surface roughness is below 2nm to obtain a pretreatment part AA;
polishing a lower panel 2B (namely a surface to be bonded) of the SiC substrate 2B by using chemical mechanical polishing until the surface roughness is less than 2nm to obtain a pretreated BA;
step 2: sequentially ultrasonically cleaning a pretreatment part AA by using deionized water, ethanol and acetone alternately, and drying by using nitrogen to obtain a pretreatment part AB for later use;
sequentially ultrasonically cleaning a pretreatment piece BA by using deionized water, ethanol and acetone alternately, and drying by using nitrogen to obtain a pretreatment piece BB for later use;
each solution is washed for 3 times of 3min alternately; washing with deionized water for 3 times, and cleaning the surface to be bonded of the pretreated part A with Piranha solution, RCA1 and RCA2 standard solutions for 10 min;
and step 3: pretreating the pretreatment piece AB by using a hydrofluoric acid solution for 30min, and removing a primary oxide layer on the surface of the pretreatment piece AB to obtain a pretreatment piece AC;
pretreating a pretreatment piece BB by using a hydrofluoric acid solution for 30min, and removing a native oxide layer on the surface of the pretreatment piece BB to obtain a pretreatment piece BC;
and 4, step 4: placing two surfaces to be bonded of the pretreatment piece AC and the pretreatment piece BC in a hydrofluoric acid solution oppositely, and applying certain pressure to complete the pre-bonding of the pretreatment piece AC and the pretreatment piece BC to obtain a pretreatment piece AD;
and 5: arranging a pretreatment piece AD on the surface of the thermal insulation structure and bonding to obtain a SiC pre-bonded sample piece; controlling the pressure in the vacuum environment to be less than 50Pa by using a vacuum filtration system; the temperature in the thermal insulation structure was controlled to a predetermined temperature of 1100 ℃ using a heater and the SiC pre-bonded sample was loaded with an axial pressure of 50 MPa. And after bonding for 3h, taking out the bonded film after the bonding machine is cooled to room temperature, and bonding the SiC sensing film 1 and the SiC substrate 2 to obtain the full SiC structure sensing head.
In the invention, the SiC sensing diaphragm 1 and the SiC substrate 2 are bonded in a high vacuum environment, so that the B blind hole 2C arranged on the SiC substrate 2 has the characteristics of a Fabry-Perot cavity, and the vacuum degree in the Fabry-Perot cavity is ensured by the high vacuum environment in the bonding process. In addition, no heterogeneous intermediate layer made of other materials and the like exists in the bonding interface between the SiC sensing diaphragm 1 and the SiC substrate 2 in the bond completion process applied by the invention.
Referring to fig. 1C, 2A, 4 and 6, the center of the zirconia base 3 is a C-center through hole 3A through which one end of the optical fiber 4 passes; the lower end of the zirconia base 3 is provided with a rectangular countersunk head cavity 3B, and the rectangular countersunk head cavity 3B is used for placing the SiC substrate 2.
When the pressure sensor designed by the invention is used in a high-temperature environment with the temperature of more than 1000 ℃ in a high-temperature area such as an aircraft engine combustion chamber and the like, the characteristic that the thermal expansion coefficient of the zirconia base 3 is similar to that of the silicon carbide material is utilized, and the failure condition caused by the difference of the thermal expansion coefficients is avoided.
In the present invention, the optical fiber 4 is a sapphire optical fiber. Under the condition that the roughness of the lower surface of the SiC substrate 2 meets the optical coupling, one end of the sapphire optical fiber 4 can be directly fixedly connected with the C blind hole 2D of the SiC substrate 2 through high-temperature-resistant ceramic glue, so that the end face of the sapphire optical fiber 4 is in close contact with the lower surface of the SiC substrate 2. The diameter of the sapphire optical fiber 4 is 125 micrometers, and the optical fiber head is obtained by cutting with an optical fiber cutter, so that the flatness of the optical fiber head is ensured; the end face of the sapphire optical fiber is in close contact with the upper surface of the blind hole of the SiC substrate and is used for transmitting optical signals.
Referring to fig. 1, 1C, 2A, 4, 5A to 5C, the center of the molybdenum package holder 5 is a B center through hole 5A for passing one end of the optical fiber 4; the lower end of the molybdenum packaging seat 5 is provided with an internal thread section 5B; the molybdenum-made packaging seat 5 is internally provided with a countersunk cavity 5C, the countersunk cavity 5C is used for placing the zirconia base 3, and the upper end of the zirconia base 3 is in contact with a top panel 5D of the countersunk cavity.
Referring to fig. 1, 1C, 2A, and 4, the molybdenum package 6 is a multi-segment cylindrical structure. The center of the molybdenum package 6 is a center through hole A6C for air to enter; one end of the molybdenum packaging body 6 is provided with an external thread section 6A and an installation section 6B, the A matching panel 6B1 of the installation section 6B is contacted with the lower panel 1B of the silicon carbide sensing diaphragm 1, and the external thread section 6A is in threaded connection with the internal thread section 5B of the molybdenum packaging seat 5, so that the molybdenum packaging body 6 is fixedly connected with the molybdenum packaging seat 5.
The working principle of the absolute pressure type optical fiber Fabry-Perot silicon carbide high-temperature resistant aviation pressure sensor comprises the following steps:
the sensor is manufactured based on the Fabry-Perot interference principle, a Fabry-Perot interference cavity is formed in a SiC sensing head, and a plurality of beams of reflected light can be generated on the end face of a sapphire optical fiber 5, the lower surface of a SiC sensing diaphragm 1 and the upper surface of a SiC substrate 2 to form interference fringes. The distance between each reflecting surface can be obtained by demodulating and calculating the interference fringes, when the SiC sensing diaphragm 1 is under the action of pressure, the diaphragm deforms, namely the distance between the reflecting surfaces changes, the deformation quantity of the SiC sensing diaphragm can be obtained by demodulating the variation quantity of the distance between the reflecting surfaces, and then the pressure value borne by the SiC sensing diaphragm is calculated, so that the pressure is measured. The schematic view of the measuring device and the measuring principle are shown in fig. 5 and 6.
Example 1
The sensing head with the full SiC structure designed by the invention is applied to the measurement of the dynamic pressure and flow field characteristics of the high-temperature area of the aircraft engine, and a molybdenum packaging seat 5 and a molybdenum packaging body 6 are specially designed for the installation of the sensing head with devices of the high-temperature area of the aircraft engine. The SiC sensing diaphragm 1 and the SiC substrate 2 are arranged below the zirconia base plate 3, one end of the sapphire optical fiber 4 is bonded on the SiC substrate 2, the zirconia base plate 3 is arranged in a countersunk cavity 5C of the molybdenum packaging seat 5, and a molybdenum packaging body 6 is connected below the molybdenum packaging seat 5 in a threaded manner; the other end of the sapphire optical fiber 4 passes through a center through hole 5A of a molybdenum package base 5.
The sensor obtained according to the embodiment 1 is used for measuring the pressure in a high-temperature environment, the environment temperature is 1000 ℃, the measurement range is 0-1 MPa, the length h2 (uncompressed) of the Fabry-Perot cavity is 40.5 mu m, the sensitive part 1D of the SiC sensing diaphragm 1 is bent and deformed after pressure bearing, the length of the Fabry-Perot cavity is reduced, and the measurement result is shown in FIG. 9. In fig. 9, the abscissa is the loading pressure, the ordinate is the length of the fabry-perot cavity, the measurement result of the sensor coincides with a theoretical value, and the mechanical sensitivity is 7.89nm/kPa calculated by dividing the variation of the length of the fabry-perot cavity by the loading pressure value.
A photonic crystal structure is designed at a sensitive part 1D of the SiC sensing diaphragm 1:
step a, carrying out ultrasonic cleaning on the AE matrix to be treated after the step 16 by absolute ethyl alcohol and acetone in sequence, and then cleaning in RCA1 and RCA2 solutions to obtain a clean AF matrix to be treated; the RCA1 solution is ammonia water: hydrogen peroxide: deionized water 1:1: 5; the RCA2 solution is hydrochloric acid (mass percentage concentration is 35-38): hydrogen peroxide: deionized water 1:1: 6.
B, uniformly spin-coating photoresist on an upper panel of the clean AF matrix to be processed, performing dot matrix patterned photoetching, removing the photoresist outside the pattern of the upper panel, and leaving a patterned photoresist configuration to obtain an AG matrix to be processed;
c, sputtering metal Ni on the AG substrate to be treated by adopting a magnetron sputtering process to form a metal nickel layer, thus obtaining an AH substrate to be treated;
d, stripping off the photoresist configuration by using an organic solvent to obtain the AI substrate to be processed with the graphical metal Ni mask;
e, etching the AI substrate to be treated by utilizing a plasma reactive etching (DRIE) processing technology, wherein the used gas component is SF6/O2, the etching power is 300-500W, and etching is carried out to obtain the AJ substrate to be treated;
and f, removing the remaining patterned metal Ni mask on the AJ substrate to be processed by acid washing to obtain the SiC sensing diaphragm 1 with the photonic crystal structure on the upper panel and the blind hole structure on the lower panel.
The SiC sensing diaphragm 1 obtained after step f is applied to a pressure sensor (referred to as an inventive device) and compared with a SiC sensing diaphragm pressure sensor (referred to as a comparative device) of an unprocessed photonic crystal structure, as shown in fig. 10. In fig. 10, the abscissa is the loading pressure, the ordinate is the central wavelength, and the sensitivity of the sensor can be improved due to different reflectivities of the photonic crystal structure to different wavelengths of light, and the sensitivity of the optical demodulation of the device of the invention is improved by more than 2 times compared with that of a contrast device.
The invention relates to an absolute pressure type optical fiber Fabry-Perot silicon carbide high-temperature resistant aviation pressure sensor, wherein a sensing head in the sensor adopts a silicon carbide sensing diaphragm and a full SiC structure sensing head of a silicon carbide substrate.
Claims (5)
Priority Applications (1)
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| CN109904064A (en) * | 2019-01-21 | 2019-06-18 | 中国航空工业集团公司北京长城航空测控技术研究所 | A method for improving the direct bonding strength of silicon carbide |
| CN111077585A (en) * | 2020-01-02 | 2020-04-28 | 广西大学 | Optical fiber sensor capable of adapting to deep sea high-pressure environment |
| CN113514146B (en) * | 2021-04-16 | 2023-09-26 | 中国人民解放军战略支援部队航天工程大学 | An induction plug that can simultaneously measure detonation combustion ion signals and combustion light signals |
| CN113624362B (en) * | 2021-08-16 | 2024-06-07 | 哈尔滨工程大学 | Optical fiber Fabry-Perot interference high-temperature sensor based on silicon carbide microcavity |
| CN118225306A (en) * | 2024-05-23 | 2024-06-21 | 成都凯天电子股份有限公司 | A MEMS high temperature pressure sensor and a method for preparing a sensor chip |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102721492A (en) * | 2012-05-31 | 2012-10-10 | 天津大学 | Optical fiber Fabry-Perot pressure sensor with fiber bragg grating temperature compensation and making method thereof |
| CN103234673A (en) * | 2013-04-27 | 2013-08-07 | 北京航空航天大学 | Pressure sensor micro-nano structure with high stability under high-temperature environment |
| CN103644988A (en) * | 2013-11-25 | 2014-03-19 | 中国航空工业集团公司北京长城计量测试技术研究所 | Optical fiber pressure sensor with temperature measurement function |
| CN103674358A (en) * | 2013-11-25 | 2014-03-26 | 中国航空工业集团公司北京长城计量测试技术研究所 | Method for compensating temperature of diaphragm type fiber F-P (Fabry-Perot) cavity pressure sensor |
| CN205580636U (en) * | 2016-04-07 | 2016-09-14 | 中国航空工业集团公司西安飞机设计研究所 | Aircraft surface pressure detecting system |
| CN205664972U (en) * | 2016-05-16 | 2016-10-26 | 中北大学 | High -temperature pressure sensor |
| CN106323515A (en) * | 2015-07-10 | 2017-01-11 | 成都凯天电子股份有限公司 | Optical fiber F-P cavity stress relief pressure sensor |
| CN106441657A (en) * | 2016-09-20 | 2017-02-22 | 西北工业大学 | Silicon-carbide-based high-temperature pressure sensor on the basis of Fabry-Perot cavity and preparation method of sensor |
| CN107063554A (en) * | 2017-04-01 | 2017-08-18 | 天津大学 | A kind of integrated fiber big pressure sensor and preparation method thereof |
| CN107664548A (en) * | 2017-11-03 | 2018-02-06 | 中国航空工业集团公司北京长城计量测试技术研究所 | A kind of EFPI fibre optic compression sensors and preparation method thereof |
| CN107764441A (en) * | 2017-09-12 | 2018-03-06 | 天津大学 | Pressure sensor F P intracavitary residual pressure measuring systems and method |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7881565B2 (en) * | 2006-05-04 | 2011-02-01 | The Board Of Trustees Of The Leland Stanford Junior University | Device and method using asymmetric optical resonances |
| GB2543984B (en) * | 2011-08-18 | 2017-07-19 | Oxsensis Ltd | Pressure sensor element with cap |
| US9804033B2 (en) * | 2013-04-25 | 2017-10-31 | Sentek Instrument LLC | Sapphire sensor for measuring pressure and temperature |
| CN103557929B (en) * | 2013-11-14 | 2015-11-11 | 北京航空航天大学 | A kind of Fabry-perot optical fiber sound pressure sensor method for making based on graphene film and measuring method, device |
| CN104880267A (en) * | 2015-05-28 | 2015-09-02 | 北京理工大学 | Fiber micro-nano Fabry-Perot interference type pressure sensor and manufacturing method thereof |
| CN105784196B (en) * | 2016-05-20 | 2018-07-13 | 中国电子科技集团公司第四十九研究所 | Reflection type temperature sensing probe based on double-layer photonic crystal film |
| CN106225965B (en) * | 2016-07-04 | 2018-12-21 | 北京航空航天大学 | A kind of micro high sensitivity optical fiber interference type pressure sensor and preparation method thereof |
-
2018
- 2018-07-20 CN CN201810801164.2A patent/CN108760148B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102721492A (en) * | 2012-05-31 | 2012-10-10 | 天津大学 | Optical fiber Fabry-Perot pressure sensor with fiber bragg grating temperature compensation and making method thereof |
| CN103234673A (en) * | 2013-04-27 | 2013-08-07 | 北京航空航天大学 | Pressure sensor micro-nano structure with high stability under high-temperature environment |
| CN103644988A (en) * | 2013-11-25 | 2014-03-19 | 中国航空工业集团公司北京长城计量测试技术研究所 | Optical fiber pressure sensor with temperature measurement function |
| CN103674358A (en) * | 2013-11-25 | 2014-03-26 | 中国航空工业集团公司北京长城计量测试技术研究所 | Method for compensating temperature of diaphragm type fiber F-P (Fabry-Perot) cavity pressure sensor |
| CN106323515A (en) * | 2015-07-10 | 2017-01-11 | 成都凯天电子股份有限公司 | Optical fiber F-P cavity stress relief pressure sensor |
| CN205580636U (en) * | 2016-04-07 | 2016-09-14 | 中国航空工业集团公司西安飞机设计研究所 | Aircraft surface pressure detecting system |
| CN205664972U (en) * | 2016-05-16 | 2016-10-26 | 中北大学 | High -temperature pressure sensor |
| CN106441657A (en) * | 2016-09-20 | 2017-02-22 | 西北工业大学 | Silicon-carbide-based high-temperature pressure sensor on the basis of Fabry-Perot cavity and preparation method of sensor |
| CN107063554A (en) * | 2017-04-01 | 2017-08-18 | 天津大学 | A kind of integrated fiber big pressure sensor and preparation method thereof |
| CN107764441A (en) * | 2017-09-12 | 2018-03-06 | 天津大学 | Pressure sensor F P intracavitary residual pressure measuring systems and method |
| CN107664548A (en) * | 2017-11-03 | 2018-02-06 | 中国航空工业集团公司北京长城计量测试技术研究所 | A kind of EFPI fibre optic compression sensors and preparation method thereof |
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