CN108540117A - A kind of high power PIN RF switch driving circuits - Google Patents
A kind of high power PIN RF switch driving circuits Download PDFInfo
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- CN108540117A CN108540117A CN201810208460.1A CN201810208460A CN108540117A CN 108540117 A CN108540117 A CN 108540117A CN 201810208460 A CN201810208460 A CN 201810208460A CN 108540117 A CN108540117 A CN 108540117A
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- mosfet driver
- power pin
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- door
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- 230000005611 electricity Effects 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 230000001934 delay Effects 0.000 abstract description 3
- 238000004088 simulation Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/20—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Electronic Switches (AREA)
Abstract
The invention belongs to RF switch driving circuit technical fields, disclose a kind of high power PIN RF switch driving circuits, including one and door, a NOT gate and a downside mosfet driver；It is used to access TTL with the signal input part of the signal input part NAND gate of door and controls level, is connected with the output end of door with an input terminal of downside mosfet driver, the output end of NOT gate is connected with another input terminal of downside mosfet driver；With door it is used to that downside mosfet driver will to be supplied to after external TTL control level delays, NOT gate is used to after negating external TTL control level be supplied to downside mosfet driver, downside mosfet driver U3 to be used to generate control voltage required when high power PIN RF switches channel switches according to input signal；This high power PIN RF switch driving circuits disclosed by the invention have the advantages that integrated level is high, circuit is simple, level conversion speed is fast, are easily achieved, are stable and reliable for performance, is of low cost.
Description
Technical field
The invention belongs to RF switch actuation techniques fields, and in particular to a kind of high power PIN RF switch driving circuits.
Background technology
RF switch has channel handoff functionality, particularly suitable for multiple antennas, multi-channel radio frequency communication system.In recent years
Come, with the rapid development of radar and communication system, RF switch is widely applied.In existing engineering design, Gao Gong
Rate PIN RF switches are generally designed by the way of the combination of resistance, NPN triodes and PMOS field-effect tube into horizontal drive circuit.
Due to the influence of discrete component parasitic capacitance and inductance, this traditional driving circuit cannot achieve PIN RF switches channel
Between be switched fast.In addition, traditional driving circuit integrated level built using discrete electronic device is low, in driving multichannel
When RF switch matrix, a large amount of discrete component is needed, the printed board space for occupying bigger is not only needed, can also cause circuit
Reliability it is low.
Invention content
For the disadvantages described above or Improvement requirement of the prior art, the present invention provides a kind of drives of high power PIN RF switches
Dynamic circuit, it is slow-footed its object is to solve existing high power PIN RF switch driving circuits poor reliability, level conversion
Technical problem.
To achieve the above object, according to one aspect of the present invention, a kind of high power PIN RF switches driving electricity is provided
Road, including one and door, a NOT gate and a downside mosfet driver；
Wherein, access TTL control level is used to the signal input part of the signal input part NAND gate of door, it is defeated with door
Outlet is connected with an input terminal of downside mosfet driver, the output end of NOT gate and downside mosfet driver another
Input terminal is connected.
Preferably, above-mentioned high power PIN RF switch driving circuits, including one and door U1, a NOT gate U2, one is low
Side mosfet driver U3；
Wherein, level, the ends GND ground connection are controlled for accessing TTL with signal input part A, B of door U1, VCC is terminated into+5V
Power supply；Output end Y is connected with an input terminal INA of downside mosfet driver U3；
Wherein, for accessing TTL control level, the ends NC and GND are grounded the signal input part A of NOT gate U2, VCC terminate into
+ 5V power supplys；The output end of NOT gate U2 is connected with another input terminal INB of downside mosfet driver U3.
Preferably, above-mentioned high power PIN RF switch driving circuits, downside mosfet driver U3 include that a reverse phase is defeated
OutletWith an in-phase output end OUTB, reversed-phase outputOutput high-power PIN RF switches channel switches
The first required control voltage V1, the second required control of in-phase output end OUTB output high-power PIN RF switches channel switching
VCC access+28V the voltages of voltage V2 processed, the downside mosfet driver U3；
Wherein, it is used to the INA of downside mosfet driver U3 will be supplied to defeated after external TTL control level delays with door U1
Enter pin, NOT gate U2 is used to after negating external TTL control level be supplied to the INB input pipes of downside mosfet driver U3
Foot, downside mosfet driver U3 include a reversed-phase outputWith an in-phase output end OUTB, for exporting height
Power P IN RF switches channel the first control voltage V1 required when switching, the second control voltage V2.
Preferably, above-mentioned high power PIN RF switch driving circuits, the logic gate electricity with the preferred TI semiconductor companies of door
Road SN74AHCT1G08.
Preferably, above-mentioned high power PIN RF switch driving circuits, the logic gate electricity of the preferred TI semiconductor companies of NOT gate
Road SN74AHC1G04.
Preferably, above-mentioned high power PIN RF switch driving circuits, the preferred IXYS companies of downside mosfet driver U3
IXDF604.
In general, through the invention it is contemplated above technical scheme is compared with the prior art, can obtain down and show
Beneficial effect：
This high power PIN RF switch driving circuits provided by the invention drive using with door, NOT gate and downside MOSFET
Dynamic device realizes that high, circuit is simply, level conversion speed is fast with integrated level, is easily achieved, is stable and reliable for performance, is of low cost
The advantages of.
Description of the drawings
Fig. 1 is traditional high power PIN RF switch driver circuit schematic diagrams built using discrete electronic device；
Fig. 2 is according to high power PIN RF switch driver circuit schematic diagrams provided in an embodiment of the present invention；
Fig. 3 is that control the signal period in TTL be 100us, under the conditions of duty ratio 50%, traditional PI N RF switches driving electricity
The simulation result on road；
Fig. 4 is that control the signal period in TTL be 100us, under the conditions of duty ratio 50%, simulation result of the invention；
Fig. 5 is that control the signal period in TTL be 10us, under the conditions of duty ratio 50%, traditional PI N RF switch driving circuits
Simulation result；
Fig. 6 is that control the signal period in TTL be 10us, under the conditions of duty ratio 50%, simulation result of the invention.
Fig. 7 is that control the signal period in TTL be 200ns, under the conditions of duty ratio 50%, simulation result of the invention.
In all the appended drawings, same reference numeral represents identical technical characteristic, specifically, U1 be with door, U2 be it is non-
Door, U3 are downside mosfet driver.
Specific implementation mode
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in the various embodiments of the present invention described below
It does not constitute a conflict with each other and can be combined with each other.
In existing engineering design, high power PIN RF switches generally use discrete NPN triodes and PMOS field-effect tube
The mode of combination is designed into horizontal drive circuit, and circuit diagram is as shown in Figure 1；It is this to be built using discrete electronic device
Driving circuit has the defects of poor reliability, level conversion speed is slow.
In view of the above-mentioned defects in the prior art, a kind of high power PIN RF switch driving circuits provided by the present invention, packet
Include one and door, a NOT gate, a downside mosfet driver；
It is used to access TTL with the signal input part of the signal input part NAND gate of door and controls level, the output end with door
It is connected with an input terminal of downside mosfet driver, the output end of NOT gate and another input of downside mosfet driver
End is connected.
As shown in Fig. 2, being a kind of electricity of one embodiment of high power PIN RF switch driving circuits provided by the invention
Lu Tu, including one and door U1, NOT gate a U2, a downside mosfet driver U3；
Level, the ends GND ground connection are controlled for accessing TTL with signal input part A, B of door U1, VCC is terminated into+5V power supplys；
Output end Y is connected with an input terminal INA of downside mosfet driver U3；
The signal input part A of NOT gate U2 is grounded for accessing TTL control level, the ends NC and GND, and VCC is terminated into+5V electricity
Source；The output end of NOT gate U2 is connected with another input terminal INB of downside mosfet driver U3；
Downside mosfet driver U3 includes a reversed-phase outputWith an in-phase output end OUTB, reverse phase is defeated
OutletOutput control voltage V1, in-phase output end OUTB output controls voltage V2, the VCC of downside mosfet driver U3
Access+28V voltages；
Wherein, it is used to the INA of downside mosfet driver U3 will be supplied to defeated after external TTL control level delays with door U1
Enter pin, NOT gate U2 is used to after negating external TTL control level be supplied to the INB input pipes of downside mosfet driver U3
Foot, downside mosfet driver U3 include a reversed-phase outputWith an in-phase output end OUTB, for exporting height
Power P IN RF switches channel control voltage V1, V2 required when switching；
At control voltage V1, V2 of downside mosfet driver U3 outputs, the switching control of high power PIN RF switches channel
Logic processed is as shown in table 1 below；
1 SPDT high power PIN RF switches channel switch control logic of table
| On off state | V1 | V2 |
| RFC-RF1 is connected；RFC-RF2 is disconnected | 0V | +28V@50mA |
| RFC-RF1 is disconnected；RFC-RF2 is connected | +28V@50mA | 0V |
In the present embodiment, the logic gates SN74AHCT1G08 with the preferred TI semiconductor companies of door U1, NOT gate U2 are preferred
The IXDF604 of the preferred IXYS companies of the logic gates SN74AHC1G04 of TI semiconductor companies, downside mosfet driver U3.
This high power PIN RF switch driving circuits that embodiment provides, have that integrated level is high, circuit is simple, level
Conversion speed is fast, the advantages that being easily achieved, is stable and reliable for performance, is of low cost.
The simulation curve of conventional high power PIN RF switch driving circuits as shown in figs. 3 and 5, embodiment provide Gao Gong
The simulation curve of rate PIN RF switch driving circuits is shown in Fig. 4, Fig. 6 and Fig. 7.It can be seen from Fig. 3 and Fig. 4 electricity is controlled in TTL
When flat switch speed is slower, what two kinds of driving circuits can be realized between SPDT high power PIN RF switches channel normal cuts
It changes, but the rising edge of conventional high power PIN RF switch driving circuits and failing edge are respectively 1.4us and 3.6us, and it is of the invention
The rising edge and failing edge of the high power PIN RF switch driving circuits of offer are only respectively 10.5ns and 8.6ns.By Fig. 5, figure
6 and Fig. 7 can be seen that conventional high power PIN RF switch driving circuits, be 10us or so in TTL control level switch speeds,
It just cannot achieve the normal switching between SPDT high power PIN RF switches channel, and high power provided in an embodiment of the present invention
PIN RF switch driving circuits can still realize SPDT high powers PIN when TTL control level switch speeds are 200ns
Normal switching between RF switch channel.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, all within the spirits and principles of the present invention made by all any modification, equivalent and improvement etc., should all include
Within protection scope of the present invention.
Claims (6)
1. a kind of high power PIN RF switch driving circuits, which is characterized in that including one and door, a NOT gate and one it is low
Side mosfet driver；
The signal input part with the signal input part NAND gate of door is used to access TTL control level, the output end with door
It is connected with an input terminal of downside mosfet driver, the output end of NOT gate and another input of downside mosfet driver
End is connected.
2. high power PIN RF switch driving circuits as described in claim 1, which is characterized in that
The signal input part A and input terminal B with door is terminated for accessing TTL control level, the ends GND ground connection, VCC into+5V
Power supply；Output end Y is connected with an input terminal INA of downside mosfet driver；
The signal input part A of the NOT gate is grounded for accessing TTL control level, the ends NC and GND, and VCC is terminated into+5V electricity
Source；The output end of NOT gate is connected with another input terminal INB of downside mosfet driver.
3. high power PIN RF switch driving circuits as claimed in claim 1 or 2, which is characterized in that the downside MOSFET
Driver includes a reversed-phase outputWith an in-phase output end OUTB, reversed-phase outputOutput high-power
The first control voltage V1 needed for the switching of PIN RF switches channel, in-phase output end OUTB output high-power PIN RF switches are logical
The second control voltage V2 needed for road switching, the VCC access+28V voltages of the downside mosfet driver.
4. high power PIN RF switch driving circuits as claimed in claim 1 or 2, which is characterized in that described preferably to be patrolled with door
Collect gate circuit SN74AHCT1G08.
5. high power PIN RF switch driving circuits as claimed in claim 4, which is characterized in that NOT gate preferred logic door electricity
Road SN74AHC1G04.
6. high power PIN RF switch driving circuits as described in claim 4 or 5, which is characterized in that downside MOSFET drivings
Device U3 preferably uses IXDF604.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810208460.1A CN108540117A (en) | 2018-03-14 | 2018-03-14 | A kind of high power PIN RF switch driving circuits |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810208460.1A CN108540117A (en) | 2018-03-14 | 2018-03-14 | A kind of high power PIN RF switch driving circuits |
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| Publication Number | Publication Date |
|---|---|
| CN108540117A true CN108540117A (en) | 2018-09-14 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810208460.1A Pending CN108540117A (en) | 2018-03-14 | 2018-03-14 | A kind of high power PIN RF switch driving circuits |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110739928A (en) * | 2019-10-16 | 2020-01-31 | 广东圣大电子有限公司 | ultrashort wave pilot frequency power combiner |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6369316A (en) * | 1986-09-11 | 1988-03-29 | Matsushita Electric Ind Co Ltd | High voltage drive circuit |
| EP1662659A2 (en) * | 2004-11-26 | 2006-05-31 | Fujitsu Limited | Selector circuit |
| US7358763B2 (en) * | 2000-07-31 | 2008-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of an electric circuit |
| US8466710B2 (en) * | 2010-09-21 | 2013-06-18 | Green Solution Technology Co., Ltd. | Circuit for restraining shoot through current |
| CN106208631A (en) * | 2016-08-30 | 2016-12-07 | 苏州泰思特电子科技有限公司 | Arbitrarily pulsewidth MOSFET electrical switch drive circuit |
| CN106209044A (en) * | 2016-08-30 | 2016-12-07 | 苏州泰思特电子科技有限公司 | MOSFET electrical switch drive circuit |
| CN107147378A (en) * | 2017-07-03 | 2017-09-08 | 中国工程物理研究院流体物理研究所 | Dual-pulse power supply and double-exposure photoelectricity framing camera |
-
2018
- 2018-03-14 CN CN201810208460.1A patent/CN108540117A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6369316A (en) * | 1986-09-11 | 1988-03-29 | Matsushita Electric Ind Co Ltd | High voltage drive circuit |
| US7358763B2 (en) * | 2000-07-31 | 2008-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of an electric circuit |
| EP1662659A2 (en) * | 2004-11-26 | 2006-05-31 | Fujitsu Limited | Selector circuit |
| US8466710B2 (en) * | 2010-09-21 | 2013-06-18 | Green Solution Technology Co., Ltd. | Circuit for restraining shoot through current |
| CN106208631A (en) * | 2016-08-30 | 2016-12-07 | 苏州泰思特电子科技有限公司 | Arbitrarily pulsewidth MOSFET electrical switch drive circuit |
| CN106209044A (en) * | 2016-08-30 | 2016-12-07 | 苏州泰思特电子科技有限公司 | MOSFET electrical switch drive circuit |
| CN107147378A (en) * | 2017-07-03 | 2017-09-08 | 中国工程物理研究院流体物理研究所 | Dual-pulse power supply and double-exposure photoelectricity framing camera |
Non-Patent Citations (2)
| Title |
|---|
| GUITARHUA: "如何选用MOSFET驱动器", 《百度在线，HTTP://WWW.360DOC2.NET/WXARTICLENEW/472868536.HTML》 * |
| IXYS: "IXD_604—4-Ampere Dual Low-Side", 《IXDF604数据手册：HTTP://WWW.360DOC2.NET/WXARTICLENEW/472868536.HTML》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110739928A (en) * | 2019-10-16 | 2020-01-31 | 广东圣大电子有限公司 | ultrashort wave pilot frequency power combiner |
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