CN108305922B - Nitride semiconductor structure and semiconductor light emitting element - Google Patents
Nitride semiconductor structure and semiconductor light emitting element Download PDFInfo
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- CN108305922B CN108305922B CN201810344250.5A CN201810344250A CN108305922B CN 108305922 B CN108305922 B CN 108305922B CN 201810344250 A CN201810344250 A CN 201810344250A CN 108305922 B CN108305922 B CN 108305922B
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Abstract
本发明有关于一种氮化物半导体结构及半导体发光元件。该氮化物半导体结构主要于发光层与p型载子阻隔层间配置有一应力控制层，p型载子阻隔层由AlxGa1‑xN表示的材料所构成(0<x<1)，而应力控制层由AlxInyGa1‑x‑yN表示的材料所构成(0<x<1、0<y<1、0<x+y<1)，且发光层具有多个彼此交替堆叠的阱层及阻障层的多重量子阱结构，且每两层阻障层间具有一阱层。该半导体发光元件至少包含如上述的氮化物半导体结构，以及二相配合地提供电能的n型电极与p型电极。由此，应力控制层不仅可改善p型载子阻隔层与发光层因晶格失配所造成晶体质量劣化的问题；同时，更可减低阱层因材料差异所受的压缩应力。
The present invention relates to a nitride semiconductor structure and a semiconductor light-emitting device. The nitride semiconductor structure mainly has a stress control layer disposed between a light-emitting layer and a p-type carrier barrier layer, the p-type carrier barrier layer is composed of a material represented by AlxGa1 -xN (0<x<1), and the stress control layer is composed of a material represented by AlxInyGa1 -x-yN ( 0<x<1, 0<y<1, 0<x+y<1), and the light-emitting layer has a multiple quantum well structure of a plurality of well layers and barrier layers alternately stacked with each other, and there is a well layer between every two barrier layers. The semiconductor light-emitting device at least comprises the nitride semiconductor structure as described above, and an n-type electrode and a p-type electrode that cooperate to provide electrical energy. Therefore, the stress control layer can not only improve the problem of crystal quality degradation caused by lattice mismatch between the p-type carrier barrier layer and the light-emitting layer; at the same time, it can also reduce the compressive stress of the well layer due to material differences.
Description
The present invention is a divisional application of an invention patent application having an application number of 201310029711.7 and an invention name of "nitride semiconductor structure and semiconductor light emitting element" filed on 25.01.2013.
Technical Field
The present invention relates to a nitride semiconductor structure and a semiconductor light emitting device, and more particularly to a nitride semiconductor light emitting device having a structure A disposed between a light emitting layer and a p-type carrier blocking layerlxInyGa1-x-yA nitride semiconductor structure of a stress control layer formed by N materials and a semiconductor light-emitting element belong to the technical field of semiconductors.
Background
In recent years, the application of light emitting diodes has become widespread, and the light emitting diodes have become indispensable important elements in daily life; the light emitting diode is expected to replace the existing lighting equipment and become a solid-state lighting element of a new generation in the future, so that the development of the light emitting diode with high energy conservation, high efficiency and higher power is a future trend; nitride LEDs have become one of the most popular optoelectronic semiconductor materials due to their advantages of small device size, no mercury pollution, high light emission efficiency, and long lifetime, and the emission wavelength of group iii nitrides almost covers the visible light range, making them very promising light emitting diode materials.
Generally, a buffer layer is formed on a substrate, and then an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer are sequentially epitaxially grown on the buffer layer; removing part of the p-type semiconductor layer and part of the light-emitting layer by using a lithography and etching process until part of the n-type semiconductor layer is exposed; then, forming an n-type electrode and a p-type electrode on the exposed part of the n-type semiconductor layer and the p-type semiconductor layer respectively to manufacture a light emitting diode; the light emitting layer is a multiple quantum well structure (MQW) including quantum well layers (wells) and quantum barrier layers (barriers) alternately arranged in a repeating manner, and each quantum well layer in the multiple quantum well structure can quantum mechanically confine electrons and holes due to the quantum well layers having a lower energy gap than the quantum barrier layers, so that the electrons and the holes are injected from the n-type semiconductor layer and the p-type semiconductor layer, respectively, and combined in the quantum well layers to emit photons.
However, the light emitting efficiency of the above-mentioned led is affected by various factors (e.g., current congestion, dislocation, etc.); theoretically, the light emitting efficiency of a light emitting diode depends on the external quantum efficiency and the internal quantum efficiency (internal quantum efficiency) and light extraction efficiency (light-emission efficiency); the so-called internal quantum efficiency is determined by the material properties and quality, as for the light extraction efficiency, the radiation ratio from the inside of the device to the ambient air depends on the loss generated when the radiation leaves the inside of the device, one of the main reasons for the loss is that the semiconductor material forming the surface layer of the device has high refractive index (refractive index), so that the light is not emitted due to total reflection (totalreflection) on the surface of the material, and if the light extraction efficiency is increased, the external quantum efficiency of the semiconductor light emitting device is also increased; therefore, in recent years, many techniques have been developed for improving internal quantum efficiency and light extraction efficiency, such as using Indium Tin Oxide (ITO) as a current transport layer, using a flip-chip (flip-chip) structure, using a Patterned Sapphire Substrate (PSS), and using a Current Block Layer (CBL); in the technology of increasing the internal quantum efficiency, a p-type carrier blocking layer (p-AlGaN) with a high energy gap (band gap) is disposed between the multiple quantum well structure and the p-type semiconductor layer, so that more carriers are confined in the quantum well layer, thereby increasing the probability of electron hole combination, increasing the light emitting efficiency, and further achieving the effect of increasing the brightness of the light emitting diode.
The method of using p-AlGaN as the p-type carrier barrier layer can effectively limit the carriers in the quantum well layer to improve the internal quantum efficiency of the light-emitting diode; however, since the multiple quantum well structure is generally formed by the InGaN quantum well layer and the GaN quantum barrier layer, in essence, the p-type carrier barrier layer of p-AlGaN and the GaN quantum barrier layer have very high lattice mismatch, so that the InGaN quantum well layer is severely affected by compressive stress due to the lattice mismatch, and the compressive stress changes the energy band structure of each quantum well layer, so that electrons and holes in the quantum well layer are spatially separated from each other, resulting in a reduction in the light emitting efficiency of the light emitting diode; furthermore, the compressive stress also degrades the interface characteristics between the adjacent GaN quantum barrier layer and InGaN quantum well layer, thereby losing carriers at the interface and also affecting the light emitting efficiency of the led.
In view of the practical implementation of the conventional nitride semiconductor light emitting diode, there are still many disadvantages, and therefore, the development of a novel nitride semiconductor structure and a semiconductor light emitting device is still one of the problems to be solved in the art.
Disclosure of Invention
In order to solve the above-mentioned problems, it is an object of the present invention to provide a nitride semiconductor structure having an Al layer disposed between a light emitting layer and a p-type carrier blocking layerxInyGa1-x-yThe stress control layer is made of N material to improve the problem of crystal quality deterioration caused by lattice mismatch generated by the p-type carrier barrier layer and the light emitting layer, increase the yield of epitaxy, further reduce the influence of compressive stress on the quantum well layers, and effectively limit the electron holes in each quantum well layer, thereby improving the internal quantum efficiency and enabling the semiconductor light emitting element to obtain good light emitting efficiency.
Another object of the present invention is to provide a semiconductor light emitting device, which at least comprises the above-mentioned nitride semiconductor structure.
In order to achieve the above objects, the present invention provides a nitride semiconductor structure, which has a stress control layer disposed between a light emitting layer and a p-type carrier blocking layer, wherein the light emitting layer has a multiple quantum well structure including a plurality of well layers and barrier layers alternately stacked with each other, and each barrier layer has one of the well layers, and the p-type carrier blocking layer is made of AlxGa1-xN is a material represented by formula (I), wherein 0<x<1, and the stress control layer is AlxInyGa1-x-yN, wherein x and y satisfy 0<x<1、0<y<1、0<x+y<A value of 1.
According to an embodiment of the present invention, preferably, in the nitride semiconductor structure described above, the stress control layer is doped with a concentration of less than 1019cm-3The p-type dopant of (1).
According to the inventionIn the above-described nitride semiconductor structure, the stress control layer is preferably doped with a concentration of less than 1019cm-3N-type dopant of (2).
According to an embodiment of the present invention, preferably, in the nitride semiconductor structure described above, the stress control layer has an indium content equal to or lower than an indium content of a well layer of the multiple quantum well structure.
According to an embodiment of the present invention, preferably, in the nitride semiconductor structure described above, the stress control layer has a thickness of 2 to 15 nm.
According to an embodiment of the present invention, preferably, in the nitride semiconductor structure described above, a thickness of the stress control layer is smaller than a thickness of the well layer of the multiple quantum well structure.
According to an embodiment of the present invention, preferably, in the nitride semiconductor structure described above, the barrier layer is doped with a concentration of 1016-1018cm-3N-type dopant of (2).
The nitride semiconductor structure of the invention is mainly provided with a stress control layer between a light-emitting layer and a p-type carrier barrier layer, the light-emitting layer is provided with a multiple quantum well structure (MQW), the multiple quantum well structure comprises a plurality of well layers and barrier layers which are alternately stacked, and a well layer is arranged between every two barrier layers, wherein, the barrier layer can be doped with 10 concentration16-1018cm-3The n-type dopant in the barrier layer can reduce carrier shielding effect and increase carrier confinement effect, and the p-type carrier barrier layer is formed by the chemical formula AlxGa1-xN is a material represented by formula (I), wherein 0<x<1, and the stress control layer is made of AlxInyGa1-x-yN, wherein x and y satisfy 0<x<1、0<y<1、0<x+y<A value of 1; in addition, the indium content in the stress control layer can be further controlled to ensure that the indium content of the stress control layer is equal to or lower than that of the well layer of the multiple quantum well structure, and further the stress control layer with the energy gap larger than that of the well layer is formed, so that carriers can be limited in the well layer of the multiple quantum well structure to increase the electron contentThe probability of hole recombination promotes the internal quantum efficiency.
Furthermore, the stress control layers are respectively doped with a concentration less than 1019cm-3And a p-type dopant of less than 1019cm-3The thickness of the stress control layer is 2-15nm, preferably, the thickness of the stress control layer is smaller than that of the well layer of the multiple quantum well structure, and the phenomenon of stress accumulation and misalignment dislocation (misf iotatdistrication) can be further avoided through the thin stress control layer.
According to an embodiment of the present invention, the nitride semiconductor structure may further include a substrate, a p-type semiconductor layer and an n-type semiconductor layer; wherein the p-type semiconductor layer is disposed on the p-type carrier blocking layer, and the n-type semiconductor layer is disposed between the light emitting layer and the substrate.
According to an embodiment of the present invention, preferably, in the nitride semiconductor structure described above, the p-type semiconductor layer is doped with a concentration greater than 5 × 1019cm-3And the thickness of the p-type dopant is less than 30 nm.
In an embodiment of the invention, a p-type semiconductor layer may be disposed on the p-type carrier blocking layer, and an n-type semiconductor layer may be disposed between the light emitting layer and the substrate, wherein the p-type semiconductor layer may be doped with a dopant concentration greater than 5 × 1019cm-3And the thickness of the p-type dopant is less than 30 nm.
According to the embodiments of the present invention, preferably, in the above-mentioned nitride semiconductor structure, an n-type carrier blocking layer may be disposed between the light emitting layer and the n-type semiconductor layer, and the n-type carrier blocking layer is formed of AlxGa1-xN is a material represented by formula (I), wherein 0<x<1。
According to an embodiment of the present invention, preferably, in the above-mentioned nitride semiconductor structure, the multiple quantum well structure of the light emitting layer may form the well layer and the barrier layer respectively from InGaN and GaN, and the well layer of InGaN has a lower energy gap than the barrier layer of GaN, so that electrons and holes are more easily confined in the well layer, thereby increasing the recombination probability of electron holes.
According to the present invention, in the above-mentioned nitride semiconductor structure, a superlattice layer may be disposed between the light-emitting layer and the n-type carrier blocking layer, so as to buffer the difference between the light-emitting layer and the n-type carrier blocking layer and reduce the dislocation density thereof.
The present invention also provides a semiconductor light emitting device, which at least comprises:
a substrate;
an n-type semiconductor layer disposed on the substrate;
a light emitting layer disposed on the n-type semiconductor layer, the light emitting layer having a multiple quantum well structure including a plurality of well layers and barrier layers alternately stacked with each other, and one of the well layers between each two of the barrier layers;
a stress control layer disposed on the light emitting layer, the stress control layer being AlxInyGa1-x-yN, wherein x and y satisfy 0<x<1、0<y<1、0<x+y<A value of 1;
a p-type carrier barrier layer disposed on the stress control layer and made of AlxGa1-xN is a material represented by formula (I), wherein 0<x<1；
A p-type semiconductor layer disposed on the p-type carrier barrier layer;
an n-type electrode disposed on the n-type semiconductor layer in ohmic contact; and
and the p-type electrode is arranged on the p-type semiconductor layer in ohmic contact.
The semiconductor light-emitting element at least comprises the nitride semiconductor structure, an n-type electrode and a p-type electrode which are matched with each other to provide electric energy; thus, AlxInyGa1-x-yThe N stress control layer can not only improve the problem of crystal quality deterioration caused by lattice mismatch of the p-type carrier barrier layer and the light emitting layer; meanwhile, the compressive stress of the InGaN quantum well layer due to the material difference can be reduced, so that electrons in the quantum well layer can be reducedAnd the holes are more concentrated in space, so that the electron holes are effectively limited in the quantum well layer, and the internal quantum efficiency is improved.
In addition, the reduction of the compressive stress can also enhance the interface characteristics between the adjacent barrier layers and the well layer, improve the carrier loss at the interface, thereby increasing the internal quantum efficiency and enabling the semiconductor light-emitting element to obtain good light-emitting efficiency.
Drawings
Fig. 1 is a schematic cross-sectional view of a nitride semiconductor structure according to a preferred embodiment of the present invention.
Fig. 2 is a schematic cross-sectional view of a semiconductor light emitting device fabricated by using a nitride semiconductor structure according to a preferred embodiment of the present invention.
Description of reference numerals:
1 substrate 2 buffer layer
3 n-type semiconductor layer 31 n-type electrode
4 n-type carrier barrier layer 5 light-emitting layer
51 well layer 52 barrier layer
6 stress control layer 7p type carrier barrier layer
8 p-type semiconductor layer 81 p-type electrode
9 superlattice layer
Detailed Description
The purpose of the present invention and its structural design and functional advantages will be described in more detail in the following figures and preferred embodiments to provide a more thorough and detailed understanding of the present invention.
First, in the description of the embodiments below, it should be understood that when a layer (or film) or a structure is referred to as being disposed "on" or "under" another substrate, another layer (or film), or another structure, it may be "directly" on the other substrate, layer (or film), or another structure, or be disposed "indirectly" with one or more intervening layers therebetween, where each layer is illustrated in reference to the figures.
Fig. 1 is a schematic cross-sectional view of a nitride semiconductor structure according to a preferred embodiment of the present inventionThe light emitting layer 5 has a multiple quantum well structure (MQW) including multiple well layers 51 and barrier layers 52 alternately stacked, a stress control layer 6 is disposed between the light emitting layer 5 and a p-type carrier barrier layer 7, a well layer 51 is disposed between each two barrier layers 52, and the p-type carrier barrier layer 7 is made of AlxGa1-xN is a material represented by formula (I), wherein 0<x<1, and the stress control layer 6 is made of AlxInyGa1-x-yN, wherein x and y satisfy 0<x<1、0<y<1、0<x+y<A value of 1.
In addition, in the nitride semiconductor structure, the barrier layer 52 is doped with a doping concentration of 1016-1018cm-3And a p-type semiconductor layer 8 disposed on the p-type carrier barrier layer 7, wherein the p-type semiconductor layer 8 is doped with a concentration of more than 5 × 1019cm-3The thickness of the p-type dopant is less than 30nm, and an n-type semiconductor layer 3 is arranged between the light-emitting layer 5 and the substrate 1; furthermore, in the present embodiment, an n-type carrier blocking layer 4 may be disposed between the light-emitting layer 5 and the n-type semiconductor layer 3, wherein the n-type carrier blocking layer 4 is formed of AlxGa1-xN is a material represented by formula (I), wherein 0<x<1; in addition, a superlattice layer (superlattice) 9 is disposed between the light-emitting layer 5 and the n-type carrier blocking layer 4 to buffer the lattice difference between the light-emitting layer 5 and the n-type carrier blocking layer 4 and reduce the dislocation density.
Furthermore, in the present embodiment, the stress control layers 6 are doped with a concentration less than 1019cm-3And a p-type dopant (preferably magnesium) in a concentration of less than 1019cm-3The p-type dopant is used as an acceptor to increase the effective hole concentration, the n-type dopant is used as a donor to improve the crystallization characteristics of the gan semiconductor layer, and the n-type dopant and the p-type dopant are doped simultaneously to generate good photoelectric characteristics, the thickness of the stress control layer 6 is 2-15nm, and preferably, the thickness of the stress control layer 6 is smaller than that of the well layer 51 of the multiple quantum well structure.
The nitride semiconductor structure of the above embodiment is practicalIn practice, the material of the n-type semiconductor layer 3 may be, for example, silicon-doped GaN-based material, the material of the p-type semiconductor layer 8 may be, for example, magnesium-doped GaN-based material, and the multiple quantum well structure of the light emitting layer 5 may preferably include a well layer 51 and a barrier layer 52 formed of InGaN and GaN, respectively; due to the addition of AlxInyGa1-x-yThe stress control layer 6 formed by the N material is positioned between the p-type carrier barrier layer 7 and the light-emitting layer 5, the indium content of the stress control layer 6 is equal to or lower than that of the well layer 51 of the multiple quantum well structure by controlling the indium content in the stress control layer, and then the stress control layer 6 with the energy gap larger than that of the well layer is formed, so that carriers can be limited in the well layer 51 of the multiple quantum well structure, the probability of electron hole combination is increased, the internal quantum efficiency is further improved, and the effect of effectively enhancing the light-emitting efficiency of the semiconductor light-emitting element is achieved; further, Al of the present inventionxInyGa1-x-yThe N stress control layer 6 not only serves as the buffer layer 2 between the p-type carrier blocking layer 7 and the light emitting layer 5, but also has a higher bandgap than GaN due to InGaN containing indium generally having a lower bandgap than GaN and AlGaN containing aluminum; therefore, the stress control layer 6 of the present invention can not only improve the problem of crystal quality degradation caused by lattice mismatch generated by the p-type carrier barrier layer 7 and the light emitting layer 5; meanwhile, the influence of the compressive stress on the quantum well layers 51 can be reduced, so that electrons and holes in the quantum well layers 51 are more spatially gathered, and the electrons and holes are effectively limited in each quantum well layer 51, thereby improving the internal quantum efficiency; in addition, the reduction of the compressive stress also enhances the interface characteristics between the adjacent GaN quantum barrier layer 52 and InGaN quantum well layer 51, improves the carrier loss at the interface, and also increases the internal quantum efficiency.
Referring to fig. 2, the nitride semiconductor structure can be applied to a semiconductor light emitting device, and fig. 2 is a schematic cross-sectional view of a semiconductor light emitting device fabricated by using the nitride semiconductor structure according to a preferred embodiment of the present invention, the semiconductor light emitting device at least includes:
a substrate 1;
an n-type semiconductor layer 3 disposed on the substrate 1; the material of the n-type semiconductor layer 3 may be, for example, silicon-doped gallium nitride series material;
a light emitting layer 5 disposed on the n-type semiconductor layer 3, the light emitting layer 5 having a multiple quantum well structure including a plurality of well layers 51 and barrier layers 52 alternately stacked on each other, and a well layer 51 between each two barrier layers 52; the well layer 51 and the barrier layer 52 can be formed of InGaN and GaN, respectively, so that electrons and holes are more easily confined in the well layer 51, thereby increasing the electron-hole recombination probability and improving the internal quantum efficiency;
a stress control layer 6 disposed on the light emitting layer 5, the stress control layer 6 being made of AlxInyGa1-x-yN, wherein x and y satisfy 0<x<1、0<y<1、0<x+y<A value of 1; in the present embodiment, the stress control layers 6 are doped with a concentration less than 1019cm-3And a p-type dopant (preferably magnesium) in a concentration of less than 1019cm-3The thickness of the n-type dopant (preferably silicon) is 2-15nm, the thickness of the n-type dopant is smaller than that of the well layer 51, and the aluminum ions of the p-type carrier barrier layer 7 can diffuse into the stress control layer 6, so that the indium content of the stress control layer 6 is equal to or lower than that of the well layer 51 of the multiple quantum well structure, and further the stress control layer 6 with an energy gap larger than that of the well layer is formed, so that carriers can be limited in the well layer 51 of the multiple quantum well structure, the electron hole combination probability is increased, and the internal quantum efficiency is improved;
a p-type carrier barrier layer 7 disposed on the stress control layer 6, the p-type carrier barrier layer 7 is made of AlxGa1-xN is a material represented by formula (I), wherein 0<x<1；
A p-type semiconductor layer 8 disposed on the p-type carrier barrier layer 7; the material of the p-type semiconductor layer 8 may be, for example, a magnesium-doped gallium nitride series material;
an n-type electrode 31 disposed on the n-type semiconductor layer 3 in ohmic contact; and
a p-type electrode 81 disposed on the p-type semiconductor layer 8 in ohmic contact; the n-type electrode 31 and the p-type electrode 81 provide electric energy in cooperation, and may be made of the following materials, but not limited to: titanium, aluminum, gold, chromium, nickel, platinum, alloys thereof, and the like; the manufacturing method is well known to those skilled in the art and is not the focus of the present invention, and therefore, the detailed description thereof is omitted.
In addition, an n-type carrier barrier layer 4 can be disposed between the light-emitting layer 5 and the n-type semiconductor layer 3, and the n-type carrier barrier layer 4 is formed by AlxGa1-xN is a material represented by formula (I), wherein 0<x<1, so that carriers can be confined in the quantum well layer 51 to improve the probability of electron hole combination and increase the light emitting efficiency, thereby achieving the effect of improving the brightness of the semiconductor light emitting element; furthermore, a buffer layer 2 is disposed between the substrate 1 and the n-type semiconductor layer 3, the buffer layer 2 is made of AlxGa1-xN is a material represented by formula (I), wherein 0<x<1 for solving the epitaxial dislocation phenomenon caused by the lattice difference between the substrate 1 and the n-type semiconductor layer 3.
Thus, as is apparent from the above description of the nitride semiconductor structure having the stress control layer 6, the semiconductor light emitting element of the present invention is made of AlxInyGa1-x-yThe N stress control layer 6 not only can improve the problem of crystal quality deterioration caused by lattice mismatch between the p-type carrier barrier layer 7 and the light emitting layer 5, so as to increase the yield of epitaxy; meanwhile, the compressive stress on the InGaN quantum well layer 51 due to the material difference can be reduced, so that electrons and holes in the quantum well layer 51 are gathered in space, the electrons and holes are effectively limited in the quantum well layer 51, and the internal quantum efficiency is improved; in addition, the reduction of the compressive stress can also enhance the interface characteristics between the adjacent barrier layer 52 and the well layer 51, improve the carrier loss at the interface, thereby increasing the internal quantum efficiency, so that the semiconductor light emitting device can obtain good light emitting efficiency.
In summary, the nitride semiconductor structure and the semiconductor light emitting device with the stress control layer according to the present invention can achieve the expected operation effect through the embodiments disclosed above.
The drawings and the description are only for the preferred embodiment of the invention, and are not intended to limit the scope of the invention; other equivalent variations or modifications of the features of the invention, which are obvious to those skilled in the art, are also to be considered within the scope of the invention.
Claims (8)
1. A nitride semiconductor structure comprising:
a substrate; and sequentially disposed on the substrate:
an n-type semiconductor layer;
a light emitting layer having a multiple quantum well structure including a plurality of well layers and a plurality of barrier layers alternately stacked with each other, with one of the well layers between each two of the barrier layers;
a stress control layer of AlxInyGa1-x-yN, wherein x and y satisfy 0<x<1、0<y<1、0<x+y<1, wherein the energy gap of the stress control layer is larger than that of the well layers;
a p-type carrier barrier layer made of AlxGa1-xN is a material represented by formula (I), wherein 0<x<1; the p-type carrier blocking layer comprises a GaN-based semiconductor material and contains aluminum; and
a p-type semiconductor layer, wherein the stress control layer is arranged between the light emitting layer and the p-type carrier barrier layer, and the p-type carrier barrier layer is arranged between the p-type semiconductor layer and the stress control layer;
wherein the stress control layer is doped with a p-type dopant for increasing an effective hole concentration and an n-type dopant for improving a crystalline characteristic of the nitride semiconductor.
2. A nitride semiconductor structure comprising:
a substrate; and sequentially disposed on the substrate:
an n-type semiconductor layer;
a light emitting layer including a multiple quantum well structure, wherein the multiple quantum well structure includes a plurality of well layers and a plurality of barrier layers alternately stacked with each other, and one of the well layers is between each two of the barrier layers;
a superlattice layer disposed between the light-emitting layer and the n-type carrier blocking layer; the n-type carrier barrier layer is arranged between the light-emitting layer and the n-type semiconductor layer; the n-type carrier barrier layer 4 is made of AlxGa1-xN is a material represented by formula (I), wherein 0<x<1; a p-type semiconductor layer;
a p-type carrier barrier layer made of AlxGa1-xN is a material represented by formula (I), wherein 0<x<1; the p-type carrier barrier layer comprises a GaN-based semiconductor material and contains aluminum, and is arranged between the light-emitting layer and the p-type semiconductor layer; and
a stress control layer of AlxInyGa1-x-yN, wherein x and y satisfy 0<x<1、0<y<1、0<x+y<A value of 1; the stress control layer comprises a GaN-based semiconductor material and contains indium, and is arranged between the light emitting layer and the p-type carrier barrier layer, wherein the indium concentration in the stress control layer is equal to or less than the indium concentration in the well layers in the multiple quantum well structure;
wherein the stress control layer is doped with a p-type dopant for increasing an effective hole concentration and an n-type dopant for improving a crystalline characteristic of the nitride semiconductor.
3. The nitride semiconductor structure of claim 1 or 2, wherein the stress control layer is doped with a concentration of less than 1019cm-3The p-type dopant of (1).
4. The nitride semiconductor structure of claim 1 or 2, wherein the stress control layer is doped with a concentration of less than 1019cm-3N-type dopant of (2).
5. The nitride semiconductor structure according to claim 1 or 2, wherein the stress control layer has an indium content equal to or lower than that of the well layer of the multiple quantum well structure.
6. The nitride semiconductor structure according to claim 1 or 2, wherein the thickness of the stress control layer is 2-15 nm.
7. The nitride semiconductor structure of claim 1 or 2, wherein the thickness of the stress control layer is less than the thickness of the well layer of the multiple quantum well structure.
8. The nitride semiconductor structure of claim 1 or 2, wherein the barrier layer is doped with a concentration of 1016-1018cm-3N-type dopant of (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810344250.5A CN108305922B (en) | 2013-01-25 | 2013-01-25 | Nitride semiconductor structure and semiconductor light emitting element |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
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| CN201810344250.5A CN108305922B (en) | 2013-01-25 | 2013-01-25 | Nitride semiconductor structure and semiconductor light emitting element |
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| CN201810345115.2A Expired - Fee Related CN108565319B (en) | 2013-01-25 | 2013-01-25 | Nitride semiconductor structure and semiconductor light-emitting element |
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| CN106057997B (en) * | 2016-06-28 | 2018-10-09 | 华灿光电(苏州）有限公司 | A kind of epitaxial wafer and preparation method of yellowish green light-emitting diode |
| CN109545918B (en) * | 2018-09-27 | 2020-11-27 | 华灿光电（浙江）有限公司 | A kind of gallium nitride-based light-emitting diode epitaxial wafer and preparation method thereof |
| US11552217B2 (en) * | 2018-11-12 | 2023-01-10 | Epistar Corporation | Semiconductor device |
| CN109950375B (en) * | 2019-01-31 | 2021-04-02 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and growth method thereof |
| TWI759602B (en) * | 2019-05-24 | 2022-04-01 | 晶元光電股份有限公司 | Semiconductor device |
| CN114964569A (en) * | 2022-05-19 | 2022-08-30 | 电子科技大学 | A quantum well bias and stress sensor |
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| US5777350A (en) * | 1994-12-02 | 1998-07-07 | Nichia Chemical Industries, Ltd. | Nitride semiconductor light-emitting device |
| JP2001185493A (en) * | 1999-12-24 | 2001-07-06 | Toyoda Gosei Co Ltd | Method of manufacturing group III nitride compound semiconductor and group III nitride compound semiconductor device |
| US7755101B2 (en) * | 2005-04-11 | 2010-07-13 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor light emitting device |
| US7462884B2 (en) * | 2005-10-31 | 2008-12-09 | Nichia Corporation | Nitride semiconductor device |
| CN101527341B (en) * | 2008-03-07 | 2013-04-24 | 展晶科技(深圳)有限公司 | III-family nitrogen compound semiconductor light-emitting diode |
| CN101685844A (en) * | 2008-09-27 | 2010-03-31 | 中国科学院物理研究所 | GaN-based Single chip white light emitting diode epitaxial material |
| US20110001126A1 (en) * | 2009-07-02 | 2011-01-06 | Sharp Kabushiki Kaisha | Nitride semiconductor chip, method of fabrication thereof, and semiconductor device |
| JP2011023534A (en) * | 2009-07-15 | 2011-02-03 | Sumitomo Electric Ind Ltd | Nitride-based semiconductor light emitting element |
| CN101740691A (en) * | 2009-12-22 | 2010-06-16 | 苏州纳晶光电有限公司 | High-power gallium nitride based LED with novel structure |
| KR101766719B1 (en) * | 2010-03-25 | 2017-08-09 | 엘지이노텍 주식회사 | Light emitting diode and Light emitting device comprising the same |
| CN102157646A (en) * | 2011-05-03 | 2011-08-17 | 映瑞光电科技(上海)有限公司 | Nitride LED structure and preparation method thereof |
| CN102856449B (en) * | 2012-09-20 | 2014-12-10 | 江苏威纳德照明科技有限公司 | GaN-based semiconductor light-emitting diode and manufacture method thereof |
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| CN103972345A (en) | 2014-08-06 |
| CN108550669A (en) | 2018-09-18 |
| CN103972345B (en) | 2018-05-15 |
| CN108550669B (en) | 2020-10-09 |
| CN108565319B (en) | 2020-10-02 |
| CN108305922A (en) | 2018-07-20 |
| CN108565319A (en) | 2018-09-21 |
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