CN101740691A - High-power gallium nitride based LED with novel structure - Google Patents
High-power gallium nitride based LED with novel structure Download PDFInfo
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- CN101740691A CN101740691A CN200910264672A CN200910264672A CN101740691A CN 101740691 A CN101740691 A CN 101740691A CN 200910264672 A CN200910264672 A CN 200910264672A CN 200910264672 A CN200910264672 A CN 200910264672A CN 101740691 A CN101740691 A CN 101740691A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 121
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 104
- BDVZHDCXCXJPSO-UHFFFAOYSA-N indium(3+) oxygen(2-) titanium(4+) Chemical compound [O-2].[Ti+4].[In+3] BDVZHDCXCXJPSO-UHFFFAOYSA-N 0.000 claims abstract description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 230000004888 barrier function Effects 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000002161 passivation Methods 0.000 claims abstract description 15
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 10
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 10
- 239000000956 alloy Substances 0.000 claims description 21
- 229910045601 alloy Inorganic materials 0.000 claims description 21
- 239000004411 aluminium Substances 0.000 claims description 21
- 229910052782 aluminium Inorganic materials 0.000 claims description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 21
- 230000000903 blocking effect Effects 0.000 claims description 19
- 238000010276 construction Methods 0.000 claims description 3
- 238000002347 injection Methods 0.000 abstract description 6
- 239000007924 injection Substances 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 229910002704 AlGaN Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 description 11
- 238000003466 welding Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
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- 230000000873 masking effect Effects 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
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- 230000005641 tunneling Effects 0.000 description 1
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Abstract
The invention relates to a gallium nitride based light-emitting diode, in particular to a high-power gallium nitride based light-emitting diode structure; the high-power gallium nitride based light-emitting diode comprises a substrate, an N-type gallium nitride layer arranged on the substrate, a AlGaN cavity barrier layer arranged on a high table top of the N-type gallium nitride layer, an asymmetrical multiple quantum well active layer arranged on the cavity barrier layer, a P-type gallium nitride layer arranged on the asymmetrical multiple quantum well active layer, a P+-InGaN conducting layer arranged on the P-type gallium nitride layer, and an indium titanium oxide electrode layer which is arranged on the P+-InGaN conducting layer from bottom to top; a silicon dioxide passivation layer is arranged on the top surface of the whole light-emitting diode and the side surface connected to the high and low table tops, an N electrode is arranged on the lower table top of the N-type gallium nitride layer, and a P-electrode is arranged in the middle of the indium titanium oxide electrode layer. The light-emitting diode structure can improve the injection efficiency of the cavity and improve the photoelectric conversion efficiency.
Description
Technical field
The present invention relates to a kind of gallium nitride based light emitting diode, relate in particular to a kind of structure of high power gallium nitride LED.
Background technology
Lighting LED has remarkable advantages such as life-span length, energy-saving and environmental protection, be considered to the revolution of lighting technology again after incandescent lamp, fluorescent lamp, be the focus that semiconductor and lighting field are researched and developed and industry is paid close attention in the world at present, have great application prospect.
Existing gallium nitride based light emitting diode, its traditional structure is for being substrate with the sapphire, then in a side of Sapphire Substrate, on successively from descending a n type gallium nitride contact layer, an InGaN luminescent layer, a P type gallium nitride contact layer are set respectively, at last, on P type gallium nitride contact layer and n type gallium nitride contact layer, a positive electrode and negative electrode are set respectively.Gallium nitride based light emitting diode under this traditional structure, its luminescent layer mainly are with InGaN (In
xGa
1-xN, x=0～1) be multiple quantum trap (Multi-quantum Well) structure of potential well (Potential Well), electronics and hole discharge photon in the potential well combination.
But GaN base LED does not also enter the general illumination field at present, and one of them main cause is that along with operating current increases, present GaN base LED luminous efficiency can sharply descend.This has limited the development of large-power light-emitting diodes greatly.
The N-type active layer that adopts is one of LED structure the most commonly used at present, owing in the middle of active area and the P-GaN layer AlGaN electronic barrier layer is arranged, it has also limited the injection of hole to active area in block electrons, and this is particularly evident under big electric current.Simultaneously, because the GaN series material is the polar semiconductor material, under the effect of internal electric field, electronics occupies in single quantum well near p district one side, the hole occupies near n district one side, and owing to the effect of electronic barrier layer, hole and electronics mainly occupy in close last quantum well in p district, this just makes electron-hole recombinations luminous mainly is in the end to carry out in a quantum well, is restricting photoelectric conversion efficiency to a great extent.
For example, application number is that 200910111881.3 Chinese patent application prospectus discloses a kind of epitaxial structure and the preparation method of conventional diode GaN based multi-quantum well super light-emitting diode (SLED) of realizing higher light-emitting efficiency and power output by laser, be provided with Sapphire Substrate, epitaxial growth multilayer hetero-structure on Sapphire Substrate, multilayer hetero-structure is provided with low temperature GaN resilient coating from bottom to top, N type GaN contact electrode layer, N type AlGaN/GaN superlattice light limiting layer, N type GaN ducting layer, the InGaN/GaN multiple quantum well active layer, P type AlGaN electronic barrier layer, P type GaN ducting layer, P type AlGaN/GaN superlattice light limiting layer, P type GaN layer and P type InGaN/AlGaN superlattice contact electrode layer, on N type GaN contact electrode layer, be provided with N type electrode, on P type InGaN/AlGaN superlattice contact electrode layer, be provided with P type electrode.
In order to improve the injection efficiency in hole, improve photoelectric conversion efficiency, need design new LED structure.
Summary of the invention
The object of the invention provides a kind of high-power gallium nitride based light-emitting diode (LED) of new structure.
For achieving the above object, the concrete technical scheme of the present invention is that a kind of high-power gallium nitride based light-emitting diode (LED) of new structure comprises:
Substrate, n type gallium nitride (n-GaN) layer, aluminium gallium nitride alloy (AlGaN) barrier layer, InGaN/gallium nitride (InGaN/GaN) multiple quantum well active layer, P type gallium nitride (p-GaN) layer, P
+-InGaN (P
+-InGaN) conductive layer, indium oxide titanium (ITO) electrode layer, silicon dioxide (SiO
2) passivation layer, P electrode and N electrode, it is characterized in that wherein, described aluminium gallium nitride alloy barrier layer is a hole blocking layer; Described InGaN/gallium nitride multiple quantum well active layer is asymmetric multiple quantum well active layer, and trap is roomy in the described asymmetric multiple quantum well active layer reduces from bottom to top gradually for a short time; Described n type gallium nitride layer is the high low platform scalariform, has high table top and low table; Described N electrode is arranged on the low table of n type gallium nitride layer;
Described high-power gallium nitride based light-emitting diode structure from bottom to top is: substrate, be arranged on n type gallium nitride layer on the substrate, be arranged on aluminium gallium nitride alloy hole blocking layer on the high table top of n type gallium nitride layer, be arranged on asymmetric multiple quantum well active layer on the hole blocking layer, be arranged on P type gallium nitride layer on the asymmetric multiple quantum well active layer, be arranged on the P on the P type gallium nitride layer
+-InGaN conductive layer, be arranged on P
+Indium oxide titanium electrode layer on the-InGaN conductive layer; Described P electrode is arranged in the middle of the indium oxide titanium electrode layer;
Described silicon dioxide passivation layer is arranged on the upper surface and side surface of whole light-emitting diode, and particularly, silicon dioxide passivation layer is arranged on the low table of surface, n type gallium nitride layer of indium oxide titanium electrode layer and indium oxide titanium electrode layer, P
+The side of-InGaN conductive layer, P type gallium nitride layer, asymmetric multiple quantum well active layer, aluminium gallium nitride alloy hole blocking layer.
In the technique scheme, aluminium gallium nitride alloy (AlGaN) barrier layer is positioned on the n type gallium nitride layer (n-GaN), under InGaN/gallium nitride multiple quantum well active layer; And aluminium gallium nitride alloy (AlGaN) barrier layer is a hole blocking layer, can be selected from: undope or aluminium gallium nitride alloy layer that low concentration n type mixes; Therefore, active area is positioned at the p zone position of pn knot, realizes that the hole is injected with the source region effectively.
In the technique scheme, described InGaN/gallium nitride multiple quantum well active layer adopts asymmetric sandwich construction, and trap is wide to be reduced to 2nm gradually by 3nm from bottom to top; Described InGaN/sub-active layer of gallium nitride volume is a 3-5 quantum well; Asymmetric active area structure makes that the hole is better injected in the active area downwards, and simultaneously, electronics also mainly is distributed in the following quantum, increases the radiation recombination of electron hole, improves luminous efficiency.
In the technique scheme, P
+-InGaN (p
+-InGaN) conductive layer is positioned at above P type gallium nitride (p-GaN) layer, and carry out high concentration p type and mix, thickness is 5-10nm; P type electrode layer adopts indium oxide titanium (ITO) electrode layer and P
+-InGaN (p
+-InGaN) conductive layer contact; p
+-InGaN/ITO tunnel junctions improves the injection in hole, makes the hole better be injected into active area.Simultaneously, tunnel junctions makes electric current evenly distribute at the p-GaN layer.
Because the technique scheme utilization, the present invention compared with prior art has following advantage:
1. the present invention is by being placed on hole blocking layer between active area and the n district, and blocking hole spreads to n-GaN, and like this, active area is located in the p district, and the hole can well be injected into active area; Simultaneously, the effective mass of electronics is little, concentration is high, and the electronics on barrier layer stops the device influence less.
2. the present invention is by to the design of the asymmetric Multiple Quantum Well of active layer, because the thickness of quantum well reduces from bottom to top gradually, the hole energy level can be little and reduce along with the trap reductions in the quantum well, above the energy level in hole can be lower in the quantum well, the easier downward diffusion in hole.
3. the present invention is by designing the asymmetric Multiple Quantum Well of active layer, the not only easier downward diffusion in hole reduces electronics simultaneously and upwards is injected into p-GaN, makes polyelectron more occupy in below the quantum, can increase the overlapping of electronics and hole wave function like this, improve luminous efficiency.
4. the present invention can make electric current planar evenly distribute so that the hole is tunneling to p-GaN better by the design of design p+-InGaN/ITO conductive layer simultaneously, improves the injection efficiency in hole.
Description of drawings
Fig. 1 be among the embodiment on n-GaN layer 2 generalized section of growth AlGaN hole blocking layer 3;
Fig. 2 be among the embodiment on AlGaN hole blocking layer 3 growth asymmetric Multiple Quantum Well active area 4 generalized section;
Fig. 3 is grow successively on asymmetric Multiple Quantum Well active area 4 among the embodiment p-GaN layer 5 and p
+The generalized section of-InGaN layer 6;
Fig. 4 is at p among the embodiment
+PECVD deposits the SiO of a layer thickness 500nm on the-InGaN layer 6
2The schematic diagram of masking layer 7;
Fig. 5 is at SiO among the embodiment
2On coat photoresist, with photoetching and wet etching method, at SiO
2Masking layer 7 carves the schematic diagram of strip n-GaN electrode shape 8;
Fig. 6 passes through among the embodiment after the ICP dry etching, forms the schematic diagram of the low table 9 of n-GaN electrode on electrode zone 8;
Fig. 7 adopts wet method to remove residue SiO among the embodiment
2Masking layer 7, the schematic diagram after the cleaning;
Fig. 8 is a deposited by electron beam evaporation among the embodiment, at p
+The schematic diagram of preparation ITO nesa coating on the-InGaN layer 6;
Fig. 9 is the ITO layer 11 that keeps the p-GaN zone among the embodiment, etches away the schematic diagram of remaining ITO;
Figure 10 is PECVD deposition one deck SiO among the embodiment
2The schematic diagram of passivation layer 12, this passivation layer effectively prevents P, the electric leakage between the N electrode;
Figure 11 is photoetching and erode away p-GaN and n-GaN electrode metal pressure welding zone among the embodiment, at the above-mentioned zone electron beam evaporation, obtains the schematic diagram of p-GaN metal electrode pressure welding area electrode 13 and n-GaN metal electrode pressure welding area electrode 14.
Embodiment
Below in conjunction with drawings and Examples the present invention is further described:
Step 1: successively at substrate 1 epitaxial growth n-GaN layer 2, AlGaN layer 3 (with reference to Fig. 1);
Step 2: growth active layer 4 above AlGaN layer 3, wherein to control in the active area trap wide by regulating growth time, makes that trap is wide from bottom to top to reduce (with reference to Fig. 2) from 3nm gradually to 2nm;
Step 3: p-GaN layer 5 and p successively grow on active layer 4
+-InGaN conductive layer 6 (with reference to Fig. 3);
Step 4: at p
+Adopt method deposition one deck masking layer 7 of PECVD on the-InGaN layer 6; This masking layer material is SiO
2(with reference to Fig. 4);
Step 5: on masking layer 7, coat photoresist,, on masking layer 7, carve the n-GaN electrode zone 8 (with reference to Fig. 5) of bar shaped with the method for photoetching and wet etching;
Step 6: remove remaining photoresist, adopt ICP dry etching method etching on n-GaN electrode zone 8, form low table 9 as n-GaN electrode zone (with reference to Fig. 6);
Step 7: erode residue SiO with hydrofluoric acid solution
2Masking layer cleans (with reference to Fig. 7);
Step 8: with the method for photoetching, electron beam evaporation, preparation nesa coating ITO peels off and obtains transparency electrode 11 (with reference to Fig. 9) on p-GaN layer 6;
Step 9: with PECVD deposition one deck SiO
2Passivation layer 12, this passivation layer effectively prevents P, the electric leakage between the N electrode (with reference to Figure 10);
Step 10: adopt photoresist, with the method for photoetching and wet etching, at SiO
2Carve p-GaN electrode pressure welding zone and n-GaN electrode pressure welding zone on the passivation layer 12, evaporate step by step with electron beam simultaneously, obtain in p-GaN electrode pressure welding district 13 and n-GaN electrode pressure welding district 14 in P-GaN electrode pressure welding zone and n-GaN electrode pressure welding zone;
Step 11: scribing, encapsulation, test, finish the making of device.
The high-power gallium nitride based light-emitting diode that obtains comprises:
Substrate, n type gallium nitride (n-GaN) layer, aluminium gallium nitride alloy (AlGaN) barrier layer, InGaN/gallium nitride (InGaN/GaN) multiple quantum well active layer, P type gallium nitride (p-GaN) layer, P
+-InGaN (P
+-InGaN) conductive layer, indium oxide titanium (ITO) electrode layer, silicon dioxide (SiO
2) passivation layer, P electrode and N electrode, it is characterized in that wherein, described aluminium gallium nitride alloy barrier layer is a hole blocking layer; Described InGaN/gallium nitride multiple quantum well active layer is asymmetric multiple quantum well active layer, and trap is roomy in the described asymmetric multiple quantum well active layer reduces from bottom to top gradually for a short time; Described n type gallium nitride layer is the high low platform scalariform, has high table top and low table; Described N electrode is arranged on the low table of n type gallium nitride layer;
Described high-power gallium nitride based light-emitting diode structure from bottom to top is: substrate, be arranged on n type gallium nitride layer on the substrate, be arranged on aluminium gallium nitride alloy hole blocking layer on the high table top of n type gallium nitride layer, be arranged on asymmetric multiple quantum well active layer on the hole blocking layer, be arranged on P type gallium nitride layer on the asymmetric multiple quantum well active layer, be arranged on the P on the P type gallium nitride layer
+-InGaN conductive layer, be arranged on P
+Indium oxide titanium electrode layer on the-InGaN conductive layer; Described P electrode is arranged in the middle of the indium oxide titanium electrode layer;
Described silicon dioxide passivation layer is arranged on the upper surface and side surface of whole light-emitting diode, and particularly, silicon dioxide passivation layer is arranged on the low table of surface, n type gallium nitride layer of indium oxide titanium electrode layer and indium oxide titanium electrode layer, P
+The side of-InGaN conductive layer, P type gallium nitride layer, asymmetric multiple quantum well active layer, aluminium gallium nitride alloy hole blocking layer.
Wherein, aluminium gallium nitride alloy (AlGaN) barrier layer is positioned on the n type gallium nitride layer (n-GaN), under InGaN/gallium nitride multiple quantum well active layer; And aluminium gallium nitride alloy (AlGaN) barrier layer is a hole blocking layer, can be selected from: undope or aluminium gallium nitride alloy layer that low concentration n type mixes; Therefore, active area is positioned at the p zone position of pn knot, realizes that the hole is injected with the source region effectively.
Wherein, described InGaN/gallium nitride multiple quantum well active layer adopts asymmetric sandwich construction, and trap is wide to be reduced to 2nm gradually by 3nm from bottom to top; Described InGaN/sub-active layer of gallium nitride volume is a 3-5 quantum well; Asymmetric active area structure makes that the hole is better injected in the active area downwards, and simultaneously, electronics also mainly is distributed in the following quantum, increases the radiation recombination of electron hole, improves luminous efficiency.
Wherein, P
+-InGaN (p
+-InGaN) conductive layer is positioned at above P type gallium nitride (p-GaN) layer, and carry out high concentration p type and mix, thickness is 5-10nm; P type electrode layer adopts indium oxide titanium (ITO) electrode layer and P
+-InGaN (p
+-InGaN) conductive layer contacts P
+-InGaN/ITO tunnel junctions improves the injection in hole, makes the hole better be injected into active area.Simultaneously, tunnel junctions makes electric current evenly distribute at the p-GaN layer.
More than said specific embodiment; purpose of the present invention, scheme and beneficial effect have been carried out further instruction; institute is understood that; more than invention only is concrete enforcement of the present invention; be not limited to the present invention; all within design of the present invention and principle, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. the high-power gallium nitride based light-emitting diode of a new structure comprises:
Substrate, n type gallium nitride layer, aluminium gallium nitride alloy barrier layer, InGaN/gallium nitride multiple quantum well active layer, P type gallium nitride layer, P
+-InGaN conductive layer, indium oxide titanium electrode layer, silicon dioxide passivation layer, P electrode and N electrode is characterized in that, wherein, described aluminium gallium nitride alloy barrier layer is a hole blocking layer; Described InGaN/gallium nitride multiple quantum well active layer is asymmetric multiple quantum well active layer, and trap is roomy in the described asymmetric multiple quantum well active layer reduces from bottom to top gradually for a short time; Described n type gallium nitride layer is the high low platform scalariform, has high table top and low table; Described N electrode is arranged on the low table of n type gallium nitride layer; Described P electrode is arranged in the middle of the indium oxide titanium electrode layer;
Described high-power gallium nitride based light-emitting diode structure from bottom to top is: substrate, be arranged on n type gallium nitride layer on the substrate, be arranged on aluminium gallium nitride alloy hole blocking layer on the high table top of n type gallium nitride layer, be arranged on asymmetric multiple quantum well active layer on the hole blocking layer, be arranged on P type gallium nitride layer on the asymmetric multiple quantum well active layer, be arranged on the P on the P type gallium nitride layer
+-InGaN conductive layer, be arranged on P
+Indium oxide titanium electrode layer on the-InGaN conductive layer;
Described silicon dioxide passivation layer is arranged on the top surface and side surface of whole light-emitting diode.
2. high-power gallium nitride based light-emitting diode according to claim 1 is characterized in that the aluminium gallium nitride alloy barrier layer is a hole blocking layer, is positioned on the n type gallium nitride layer, under InGaN/gallium nitride multiple quantum well active layer.
3. high-power gallium nitride based light-emitting diode according to claim 1 is characterized in that, the aluminium gallium nitride alloy barrier layer is selected from: undope or aluminium gallium nitride alloy layer that low concentration n type mixes.
4. high-power gallium nitride based light-emitting diode according to claim 1 is characterized in that, described InGaN/gallium nitride multiple quantum well active layer adopts asymmetric sandwich construction, and trap is wide to be reduced to 2nm gradually by 3nm from bottom to top.
5. high-power gallium nitride based light-emitting diode according to claim 1 is characterized in that, described InGaN/sub-active layer of gallium nitride volume is a 3-5 quantum well.
6. high-power gallium nitride based light-emitting diode according to claim 1 is characterized in that P
+-InGaN conductive layer is positioned at above the P type gallium nitride layer, described P
+-InGaN conductive layer high concentration p type mixes, and thickness is 5-10nm.
7. high-power gallium nitride based light-emitting diode according to claim 1 is characterized in that, p type electrode layer adopts indium oxide titanium electrode layer and P
+The contact of-InGaN conductive layer.
8. high-power gallium nitride based light-emitting diode according to claim 1 is characterized in that, silicon dioxide passivation layer is arranged on the low table of surface, n type gallium nitride layer of indium oxide titanium electrode layer and indium oxide titanium electrode layer, P
+The side of-InGaN conductive layer, P type gallium nitride layer, asymmetric multiple quantum well active layer, aluminium gallium nitride alloy hole blocking layer.
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| CN102376840B (en) * | 2010-08-06 | 2013-09-11 | 台湾积体电路制造股份有限公司 | Light-emitting diode and method for manufacturing light-emitting diode |
| CN102376840A (en) * | 2010-08-06 | 2012-03-14 | 台湾积体电路制造股份有限公司 | Light emitting diode and method for manufacturing light emitting diode |
| CN102856462A (en) * | 2011-06-30 | 2013-01-02 | Lg伊诺特有限公司 | Light emitting device and lighting system with the same |
| US9293669B2 (en) | 2011-06-30 | 2016-03-22 | Lg Innotek Co., Ltd. | Light emitting device and lighting system with the same |
| CN102623606A (en) * | 2012-03-31 | 2012-08-01 | 中国科学院半导体研究所 | Gallium nitride-based light-emitting diode with silver nanowire transparent electrode and manufacturing method thereof |
| US9859462B2 (en) | 2012-12-06 | 2018-01-02 | Genesis Photonics Inc. | Semiconductor structure |
| CN103035797A (en) * | 2012-12-11 | 2013-04-10 | 东南大学 | Complete forbidden band photonic crystal structure, preparation method of the same and luminous diode |
| CN108550669B (en) * | 2013-01-25 | 2020-10-09 | 新世纪光电股份有限公司 | Nitride semiconductor structure and semiconductor light-emitting element |
| CN108305922A (en) * | 2013-01-25 | 2018-07-20 | 新世纪光电股份有限公司 | Nitride semiconductor structure and semiconductor light emitting element |
| CN108565319B (en) * | 2013-01-25 | 2020-10-02 | 新世纪光电股份有限公司 | Nitride semiconductor structure and semiconductor light-emitting element |
| CN108565319A (en) * | 2013-01-25 | 2018-09-21 | 新世纪光电股份有限公司 | Nitride semiconductor structure and semiconductor light-emitting elements |
| CN108550669A (en) * | 2013-01-25 | 2018-09-18 | 新世纪光电股份有限公司 | Nitride semiconductor structure and semiconductor light emitting element |
| CN103151435B (en) * | 2013-01-30 | 2015-05-06 | 东南大学 | Gallium nitride base light-emitting diode with composite potential barrier |
| CN103151435A (en) * | 2013-01-30 | 2013-06-12 | 东南大学 | Gallium nitride base light-emitting diode with composite potential barrier |
| CN103178172A (en) * | 2013-02-28 | 2013-06-26 | 溧阳市宏达电机有限公司 | High-brightness light-emitting diode of step structure |
| CN103165769A (en) * | 2013-02-28 | 2013-06-19 | 溧阳市宏达电机有限公司 | High-brightness light emitting diode (LED) |
| CN103178172B (en) * | 2013-02-28 | 2015-07-15 | 溧阳市宏达电机有限公司 | High-brightness light-emitting diode of step structure |
| CN103165769B (en) * | 2013-02-28 | 2015-05-13 | 溧阳市宏达电机有限公司 | Manufacture method of light emitting diode (LED) |
| CN105206721A (en) * | 2015-10-29 | 2015-12-30 | 天津三安光电有限公司 | Light emitting diode |
| US10319879B2 (en) | 2016-03-08 | 2019-06-11 | Genesis Photonics Inc. | Semiconductor structure |
| CN107546305A (en) * | 2016-06-29 | 2018-01-05 | 晶能光电（江西）有限公司 | A kind of GaN base light emitting epitaxial structure |
| US10229977B2 (en) | 2016-09-19 | 2019-03-12 | Genesis Photonics Inc. | Nitrogen-containing semiconductor device |
| US10468549B2 (en) | 2016-09-19 | 2019-11-05 | Genesis Photonics Inc. | Semiconductor device containing nitrogen |
| CN111194484A (en) * | 2017-10-23 | 2020-05-22 | 三星电子株式会社 | Light-emitting diode and method of making the same |
| EP3652792A4 (en) * | 2017-10-23 | 2020-07-08 | Samsung Electronics Co., Ltd. | LIGHT-EMITTING DIODE AND PRODUCTION METHOD THEREFOR |
| CN111194484B (en) * | 2017-10-23 | 2023-11-03 | 三星电子株式会社 | Light emitting diode and manufacturing method thereof |
| CN107895746A (en) * | 2017-12-05 | 2018-04-10 | 青岛海信宽带多媒体技术有限公司 | The laser chip of MQW containing aluminium and its manufacture method, laser aid |
| CN110521010A (en) * | 2019-06-25 | 2019-11-29 | 京东方科技集团股份有限公司 | Light emitting diode and preparation method thereof, display device |
| WO2020258033A1 (en) * | 2019-06-25 | 2020-12-30 | 京东方科技集团股份有限公司 | Light emitting diode and manufacturing method therefor, and display device |
| US11870011B2 (en) | 2019-06-25 | 2024-01-09 | Beijing Boe Technology Development Co., Ltd. | Light-emitting diode and method of manufacturing the same, and display device |
| CN111403563A (en) * | 2020-03-27 | 2020-07-10 | 厦门乾照光电股份有限公司 | Light-emitting diode with PIPN structure and preparation method thereof |
| CN113345989A (en) * | 2021-05-31 | 2021-09-03 | 河北工业大学 | Micro ultraviolet light emitting diode chip for ultraviolet communication |
| CN113659055A (en) * | 2021-09-09 | 2021-11-16 | 广西师范大学 | A device for improving LED luminous efficiency based on surface plasmon |
| WO2023207727A1 (en) * | 2022-04-27 | 2023-11-02 | 华为技术有限公司 | Light-emitting chip, display module, electronic device and processing method for light-emitting chip |
| CN116154066A (en) * | 2023-04-19 | 2023-05-23 | 江西兆驰半导体有限公司 | Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode |
| CN116154066B (en) * | 2023-04-19 | 2023-06-23 | 江西兆驰半导体有限公司 | Light-emitting diode epitaxial wafer and preparation method thereof, light-emitting diode |
| CN116825920A (en) * | 2023-08-17 | 2023-09-29 | 河源市众拓光电科技有限公司 | Vertical structure LED chip and preparation method thereof |
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