CN108239746A - In the method that semiconductor component surfaces form diamond like carbon layer - Google Patents
In the method that semiconductor component surfaces form diamond like carbon layer Download PDFInfo
- Publication number
- CN108239746A CN108239746A CN201611225555.1A CN201611225555A CN108239746A CN 108239746 A CN108239746 A CN 108239746A CN 201611225555 A CN201611225555 A CN 201611225555A CN 108239746 A CN108239746 A CN 108239746A
- Authority
- CN
- China
- Prior art keywords
- carbon layer
- diamond
- semiconductor component
- component surfaces
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 44
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 40
- 239000010432 diamond Substances 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 230000007704 transition Effects 0.000 claims abstract description 17
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 230000003678 scratch resistant effect Effects 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000007737 ion beam deposition Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The method for forming diamond like carbon layer in semiconductor component surfaces of the present invention, including：An intermediate metal is formed on the surface of semiconductor element；A metal-carbide transition zone is formed on the intermediate metal；And form a diamond like carbon layer on the metal-carbide transition zone.Thus obtained diamond like carbon layer has good film-substrate cohesion, high compactness, the scratch resistant wearability of high rigidity and low thermal coefficient of expansion.
Description
Technical field
The present invention relates to thin film materials art more particularly to a kind of form diamond like carbon layer in semiconductor component surfaces
Method.
Background technology
In recent years, due to the development of microelectric technique, many electronic components are needed also to meet resistance to grinding antifriction and be resisted
Corrosive nature requirement.For example, on the Touch Screen of the equipment such as mobile phone, tablet, it usually needs cover layer protecting film to improve
It is hardness, scratch resistant wear-resisting.Existing diamond-like (Diamond-like Carbon, DLC) film is due in Young's modulus, hardness, steady
Qualitative, coefficient of thermal expansion, electric conductivity etc. do well, thus extensively using with improve the load carrying of component,
Stability and working life.
But the preparation process of DLC is various at present, the DLC different properties that various techniques are made and most of technique
The DLC made is loosely organized, and corrosion resistance is poor.For example, United States Patent (USP) No.6,280,834 disclose one kind in vapour
Vehicle glass substrate surface uses ion beam depositing-chemical vapour deposition technique (Ion Beam Deposition, Chemical
Vapor Deposition, IBD-CVD) method prepare DLC film method, use C2H2Gas uses IBD side as ion source
Method deposits DLC, and the DLC film of preparation contains more hydrogen, the high rigidity SP of acquisition3Tetrahedral amorphous carbon film (ta-C) structure of key
Ratio is not high, and hardness only has 10-30Gpa, it is impossible to play good scratch resistant wearability.
It would therefore be highly desirable to a kind of improved method for forming diamond like carbon layer in semiconductor component surfaces, above-mentioned to overcome
Defect.
Invention content
It is an object of the present invention to provide it is a kind of semiconductor component surfaces formed diamond like carbon layer method,
With good film-substrate cohesion, high compactness, the scratch resistant wearability of high rigidity and low thermal coefficient of expansion.
To achieve the above objectives, the present invention provides a kind of method for forming diamond like carbon layer in semiconductor component surfaces,
Including：An intermediate metal is formed on the surface of semiconductor element；A metal-carbide transition is formed on the intermediate metal
Layer；And form a diamond like carbon layer on the metal-carbide transition zone.
Preferably, the diamond like carbon layer is formed by magnetron sputtering.
Include preferably, forming the diamond like carbon layer：The pulse power for connecting the cathode of carbon target is set as power 2kW
~5kW, voltage 900V~950V, electric current 2A-5A.
Preferably, bias supply, which is set as bias supply, is set as pulse width 0.8us~1us, pulse frequency 300kHz
~350kHz, voltage 25V~30V, electric current 0.2A~0.5A.
Include preferably, forming the intermediate metal：Pulse width 0.8us~1us, pulse frequency 10kHz~
50kHz, voltage 50V~60V, electric current 0.2A~0.5A.
Preferably, the intermediate metal is Ti metal layers, the metal-carbide transition zone is TiC layer.
Preferably, it further includes cleaning before the intermediate metal is formed and dries the semiconductor.
Include preferably, forming the intermediate metal：The argon gas of predetermined amount of flow is passed through into vacuum chamber and connects metal
Target.
Include preferably, forming the diamond like carbon layer：The methane gas of predetermined amount of flow is passed through into vacuum chamber.
Compared with prior art, intermediate metal of the invention, metal-carbide transition and diamond like carbon layer respectively according to
The secondary surface for being formed in semiconductor element, therefore, layer body covering even compact, the film-substrate cohesion between layer body are improved, thus
Manufactured diamond like carbon layer has high compactness, the scratch resistant wearability of high rigidity and low thermal coefficient of expansion.
Specific embodiment
As described above, essence of the invention is that provide a kind of side that diamond like carbon layer is formed in semiconductor component surfaces
Method, it is scratch resistant resistance to good film-substrate cohesion, high compactness, high rigidity between the diamond like carbon layer and element surface of formation
Mill property and low thermal coefficient of expansion.
One embodiment that the method for diamond like carbon layer is formed in semiconductor component surfaces of the present invention includes following step
Suddenly：
An intermediate metal is formed on the surface of semiconductor element；
A metal-carbide transition zone is formed on intermediate metal；And
A diamond like carbon layer is formed on metal-carbide transition zone.
Since intermediate metal and metal-carbide transition zone are respectively formed at diamond like carbon layer and semiconductor component surfaces
Between, transition zone covering even compact, therefore film-substrate cohesion improves, thus manufactured diamond like carbon layer has high fine and close
Property, the scratch resistant wearability of high rigidity and low thermal coefficient of expansion.
Specifically, the intermediate metal, metal-carbide transition zone and diamond like carbon layer are formed by magnetron sputtering mode.
Here is the preferred embodiment of the present invention, and this method includes the following steps：
Cleaning step is cleaned using cleaning agent combination ultrasonic wave.Such as by electronic component be placed in equipped with acetone,
IPA, deionized water sink in, carry out vibration washing 5 minutes using ultrasonic wave, temperature is 25 degree.The scavenging period and temperature
It can be adjusted according to the type of electronic component.
Drying steps：Electronic component is air-dried or dried.
The step of sputtering forms intermediate metal and metal-carbide transition zone, illustrates below.
Specifically, by the electronic component merging vacuum chamber after drying, vacuum chamber is vacuumized, controls vacuum chamber
Interior vacuum degree is less than 8E-5Torr.Argon gas is passed through into vacuum chamber, opens the DC power supply for being connected to Ti metallic targets, keeps Ti
Target flapper closure, vacuum cavity stable gas pressure set voltage 460-520V, plasma in 4E-3Torr, opening DC power supply
Rear electric current is lighted as 0.5A.5 minutes plasma cleans are carried out to electronic component under setting herein.It is noted that vacuum
The time of the vacuum degree of chamber, the voltage and current for setting DC power supply and plasma clean can be adjusted according to actual conditions
It is whole.
Then, under conditions of above-mentioned setting, Ti target baffles are opened, open simultaneously the bias supply of connection sample base,
Voltage is set as 50V~60V, current indication 0.2A~0.5A, pulse width 0.8us~1.0us, pulse frequency for 10kHz~
50kHz, e.g. 10kHz.The lower sputtering of setting herein 10-15 minutes, forms Ti intermediate metals.
Then, it is passed through methane reaction gas to vacuum chamber so that stable gas pressure is in 4~4.5E-3Torr, under setting herein
Sputtering 10-15 minutes, obtains TiC transition zones.
It should be noted that the intermediate metal in the present embodiment is Ti, metal-carbide transition zone is TiC, but at other
Can be other metals such as chromium (Cr), copper (Cu) and its metal carbides in embodiment.
The step of sputtering forms diamond like carbon layer.Specifically, the DC power supply of connection Ti targets is closed, is protected into vacuum chamber
It holds and is passed through methane, open the high energy pulse power supply of connection carbon target, the ON/OFF time is set as 30us/170us, and power setting is
2kW~5kW, voltage 900V~950V, electric current 2A~5A, the bias supply for connecting sample are set as pulse width 0.8us at this time
~1us, pulse frequency 300kHz~350kHz, voltage 25V~30V, electric current 0.2A~0.5A, the lower sputtering 1.5- of setting herein
2.0 hours, obtain diamond like carbon layer.
Preferably, after diamond like carbon layer formation, close the cathode power of connection target and connect sample base
Bias supply closes argon gas and methane, and heat dissipation is filled with nitrogen after twenty minutes, takes out electronic component.
Preferably, also there is cleaning step：With acetone, IPA, deionized water by sputter terminate electronic component be placed in it is super
Sound sink is respectively washed 5 minutes, and temperature is 25 degree.
There is uniform good compactness by the diamond like carbon layer that high energy pulse formula magnetron sputtering is prepared, from
And improve the corrosion resistance of component.
Above disclosed is only presently preferred embodiments of the present invention, cannot limit the right of the present invention with this certainly
Range, therefore the equivalent variations made according to scope of the present invention patent, are still within the scope of the present invention.
Claims (9)
1. in the method that semiconductor component surfaces form diamond like carbon layer, which is characterized in that including：
An intermediate metal is formed on the surface of semiconductor element；
A metal-carbide transition zone is formed on the intermediate metal；And
A diamond like carbon layer is formed on the metal-carbide transition zone.
2. the method for forming diamond like carbon layer in semiconductor component surfaces as described in claim 1, it is characterised in that：It is described
Diamond like carbon layer is formed by magnetron sputtering.
3. the method for forming diamond like carbon layer in semiconductor component surfaces as claimed in claim 2, which is characterized in that formed
The diamond like carbon layer includes：The pulse power for connecting the cathode of carbon target is set as power 2kW~5kW, and voltage 900V~
950V, electric current 2A-5A.
4. the method for forming diamond like carbon layer in semiconductor component surfaces as claimed in claim 3, it is characterised in that：It is formed
The diamond like carbon layer includes：Bias supply is set as bias supply and is set as pulse width 0.8us~1us, pulse frequency
300kHz~350kHz, voltage 25V~30V, electric current 0.2A~0.5A.
5. the method for forming diamond like carbon layer in semiconductor component surfaces as described in claim 1, which is characterized in that formed
The intermediate metal includes：Pulse width 0.8us~1us, pulse frequency 10kHz~50kHz, voltage 50V~60V, electric current
0.2A~0.5A.
6. the method for forming diamond like carbon layer in semiconductor component surfaces as described in claim 1, it is characterised in that：It is described
Intermediate metal is Ti metal layers, and the metal-carbide transition zone is TiC layer.
7. the method for forming diamond like carbon layer in semiconductor component surfaces as described in claim 1, it is characterised in that：In shape
Cleaning is further included before into the intermediate metal and dries the semiconductor.
8. the method for forming diamond like carbon layer in semiconductor component surfaces as claimed in claim 5, which is characterized in that formed
The intermediate metal includes：The argon gas of predetermined amount of flow is passed through into vacuum chamber and connects metallic target.
9. the method for forming diamond like carbon layer in semiconductor component surfaces as claimed in claim 3, which is characterized in that formed
The diamond like carbon layer includes：The methane gas of predetermined amount of flow is passed through into vacuum chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611225555.1A CN108239746A (en) | 2016-12-27 | 2016-12-27 | In the method that semiconductor component surfaces form diamond like carbon layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611225555.1A CN108239746A (en) | 2016-12-27 | 2016-12-27 | In the method that semiconductor component surfaces form diamond like carbon layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108239746A true CN108239746A (en) | 2018-07-03 |
Family
ID=62702428
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611225555.1A Pending CN108239746A (en) | 2016-12-27 | 2016-12-27 | In the method that semiconductor component surfaces form diamond like carbon layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108239746A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102286719A (en) * | 2011-07-21 | 2011-12-21 | 中国第一汽车股份有限公司 | Surface wear-resistance coating applied to automobile aluminum alloy movement friction pair |
| CN104193422A (en) * | 2014-09-05 | 2014-12-10 | 中国科学院上海硅酸盐研究所 | Silicon carbide ceramic mold core for glass modeling and preparation method thereof |
-
2016
- 2016-12-27 CN CN201611225555.1A patent/CN108239746A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102286719A (en) * | 2011-07-21 | 2011-12-21 | 中国第一汽车股份有限公司 | Surface wear-resistance coating applied to automobile aluminum alloy movement friction pair |
| CN104193422A (en) * | 2014-09-05 | 2014-12-10 | 中国科学院上海硅酸盐研究所 | Silicon carbide ceramic mold core for glass modeling and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Mattox | Handbook of physical vapor deposition (PVD) processing | |
| Er et al. | The corrosion protection ability of TiAlN coatings produced with CA-PVD under superimposed pulse bias | |
| CN102443763B (en) | Covering element with anti-fingerprint coating and preparation method thereof | |
| CN106756849A (en) | A kind of PCB with transition metal boride coating micro- brills and preparation method thereof | |
| US8372524B2 (en) | Coated article | |
| CN107937873B (en) | Carbon-doped transition metal boride coating, carbon-transition metal boride composite coating, preparation method and application thereof, and cutting tool | |
| JPH06507210A (en) | Surface treatment and deposition method for forming titanium nitride on carbonaceous materials | |
| Polini et al. | Recent Advances in the Deposition of Diamond Coatings on Co‐Cemented Tungsten Carbides | |
| CN109852943A (en) | The preparation method and product of nuclear-used zirconium alloy surface C rN coating | |
| CN104141109B (en) | Method for in-situ synthesis of composite TiC-DLC coating on surface of titanium | |
| CN102517539A (en) | Method for improving bonding strength of interface between hard coating and substrate | |
| CN100537805C (en) | Wear-resistant and corrosion-resistant spare part and surface treatment process thereof | |
| CN103628024A (en) | Technology for depositing titanium nitride film on surface of 4Cr13 stainless steel vernier caliper | |
| CN107400874B (en) | Method for preparing diamond film on surface of stainless steel | |
| CN108239746A (en) | In the method that semiconductor component surfaces form diamond like carbon layer | |
| CN102808160B (en) | Shell and preparation method thereof | |
| CN102465258A (en) | Coated part and preparation method thereof | |
| CN101768722A (en) | Preparation method of hydrogen-containing nano-structure CNx gradient film | |
| CN103045998A (en) | Product containing CrNiTiAlN quinary coating and preparation method thereof | |
| CN209024637U (en) | A kind of nitridation titanium compound film | |
| CN110923650A (en) | DLC coating and preparation method thereof | |
| CN207176061U (en) | A kind of physical vapour deposition (PVD) Ta C coatings and the workpiece provided with the coating | |
| CN109666887A (en) | A kind of TiAlN hard coat and its preparation method and application | |
| Sun et al. | Achieving ultra‐low friction of a‐C: H film grown on 9Cr18Mo steel for industrial application via programmable high power pulse magnetron sputtering | |
| Sanchette et al. | Single cycle plasma nitriding and hard coating deposition in a cathodic arc evaporation device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180703 |