CN108233926A - A kind of hyperfrequency buffer input signal device - Google Patents
A kind of hyperfrequency buffer input signal device Download PDFInfo
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Abstract
Description
技术领域technical field
本发明涉及模拟集成电路设计领域,具体设计一种超高频的输入信号缓冲器,可应用于超高速ADC输入缓冲器。The invention relates to the field of analog integrated circuit design, specifically designs an ultra-high-frequency input signal buffer, which can be applied to an ultra-high-speed ADC input buffer.
背景技术Background technique
对于低速ADC而言,可以不用缓冲器,或者用闭环运放的方式。而对于超高速ADC而言,如果不采用缓冲器,封装的寄生电感会使得输入信号质量变差;而且对于高速高带宽应用的开环运放,稳定性是很难保证的。高频输入信号直接输入到ADC芯片内部会导致信号严重失真并且输入信号驱动能力不足,需要在提高输入信号的驱动能力的同时保证较好的线性度,输入信号缓冲器是至关重要的模块之一。缓冲器输出用于采样保持(S/H)电路和比较器电路,由于工艺角和温度变化,开环结构的源随器的输出共模将会漂移,会导致比较器输入共模发生漂移而不正常工作。For low-speed ADCs, buffers may not be used, or closed-loop operational amplifiers may be used. For ultra-high-speed ADCs, if no buffer is used, the parasitic inductance of the package will deteriorate the quality of the input signal; and for open-loop operational amplifiers for high-speed and high-bandwidth applications, stability is difficult to guarantee. Directly inputting high-frequency input signals into the ADC chip will cause severe signal distortion and insufficient drive capability of the input signal. It is necessary to improve the drive capability of the input signal while ensuring better linearity. The input signal buffer is one of the most important modules. one. The buffer output is used for sample and hold (S/H) circuits and comparator circuits. Due to process angle and temperature changes, the output common mode of the source follower of the open-loop structure will drift, which will cause the input common mode of the comparator to drift. not working properly.
源随器作为模数转换器的缓冲器,具有单位增益的特点,其输出阻抗低,结合模数转换器的采样电容,可以达到高宽带的目的,同时驱动大的电容负载,并提供高质量的输入信号。As the buffer of the analog-to-digital converter, the source follower has the characteristics of unity gain, and its output impedance is low. Combined with the sampling capacitor of the analog-to-digital converter, it can achieve the purpose of high bandwidth, drive large capacitive loads at the same time, and provide high-quality input signal.
发明内容Contents of the invention
针对上述提及问题,本发明提出了一种超高频输入信号缓冲器,用于对输入信号进行缓冲,增大输入信号驱动能力的同时不损坏信号,尤其适用于超高速ADC。In view of the problems mentioned above, the present invention proposes an ultra-high frequency input signal buffer for buffering input signals, increasing the drive capability of the input signal without damaging the signal, and is especially suitable for ultra-high-speed ADCs.
本发明的技术方案为:Technical scheme of the present invention is:
一种超高频输入信号缓冲器,包括主缓冲电路、副缓冲电路、运算放大器电路、电容耦合电路和阻抗匹配电路,A UHF input signal buffer, comprising a main buffer circuit, a secondary buffer circuit, an operational amplifier circuit, a capacitive coupling circuit and an impedance matching circuit,
所述副缓冲电路由所述主缓冲电路复制生成,所述副缓冲电路的整体尺寸为所述主缓冲电路的整体尺寸按比例缩小;The secondary buffer circuit is generated by copying the main buffer circuit, and the overall size of the secondary buffer circuit is proportionally reduced to the overall size of the main buffer circuit;
所述主缓冲电路的输入端通过所述电容耦合电路后连接输入信号,其输出端作为所述超高频输入信号缓冲器的输出端;The input end of the main buffer circuit is connected to the input signal after passing through the capacitive coupling circuit, and its output end is used as the output end of the UHF input signal buffer;
所述运算放大器电路的正向输入端连接基准电压VREF,其负向输入端连接所述副缓冲电路的输出端,其输出端连接所述副缓冲电路的输入端并通过所述阻抗匹配电路后连接所述主缓冲电路的输入端。The positive input terminal of the operational amplifier circuit is connected to the reference voltage VREF, the negative input terminal is connected to the output terminal of the secondary buffer circuit, and the output terminal is connected to the input terminal of the secondary buffer circuit and passed through the impedance matching circuit. connected to the input of the main buffer circuit.
具体的,所述副缓冲电路的整体尺寸为所述主缓冲电路的整体尺寸的最小比例。Specifically, the overall size of the secondary buffer circuit is the minimum ratio of the overall size of the main buffer circuit.
具体的,所述输入信号为差分信号,所述主缓冲电路和副缓冲电路为双端输入和双端输出,所述运算放大器电路包括第一运算放大器Amp1和第二运算放大器Amp2,所述电容耦合电路包括第一电容C1和第二电容C2,所述阻抗匹配电路包括第一电阻R1和第二电阻R2,Specifically, the input signal is a differential signal, the main buffer circuit and the secondary buffer circuit are double-ended input and double-ended output, the operational amplifier circuit includes a first operational amplifier Amp1 and a second operational amplifier Amp2, and the capacitor The coupling circuit includes a first capacitor C1 and a second capacitor C2, and the impedance matching circuit includes a first resistor R1 and a second resistor R2,
所述差分信号分别通过第一电容C1和第二电容C2连接所述主缓冲电路的正向输入端和负向输入端;The differential signal is respectively connected to the positive input terminal and the negative input terminal of the main buffer circuit through the first capacitor C1 and the second capacitor C2;
第一电阻R1和第二电阻R2串联并接在所述主缓冲电路的正向输入端和负向输入端之间,其串联点连接所述副缓冲电路的正向输入端和负向输入端以及第一运算放大器Amp1和第二运算放大器Amp2的输出端;The first resistor R1 and the second resistor R2 are connected in series and in parallel between the positive input terminal and the negative input terminal of the main buffer circuit, and their series point is connected to the positive input terminal and the negative input terminal of the secondary buffer circuit And the output terminals of the first operational amplifier Amp1 and the second operational amplifier Amp2;
第一运算放大器Amp1和第二运算放大器的正向输入端连接基准电压VREF,它们的负向输入端分别连接所述副缓冲电路的正向输出端和负向输出端。The positive input terminals of the first operational amplifier Amp1 and the second operational amplifier are connected to the reference voltage VREF, and their negative input terminals are respectively connected to the positive output terminal and the negative output terminal of the auxiliary buffer circuit.
具体的,所述主缓冲电路包括第一NMOS管NM1A、第二NMOS管NM1B、第三NMOS管NM2A、第四NMOS管NM2B、第三电容C1A、第四电容C1B、第三电阻R1A、第四电阻R1B、第一电流源I1A和第二电流源I1B,Specifically, the main buffer circuit includes a first NMOS transistor NM1A, a second NMOS transistor NM1B, a third NMOS transistor NM2A, a fourth NMOS transistor NM2B, a third capacitor C1A, a fourth capacitor C1B, a third resistor R1A, a fourth resistor R1B, first current source I1A and second current source I1B,
第一NMOS管NM1A的栅极作为所述主缓冲电路的正向输入端并通过第三电容C1A后连接第三NMOS管NM2A的栅极,其漏极连接第三NMOS管NM2A的源极,其源极作为所述主缓冲电路的正向输出端并通过第一电流源I1A后接地;第三NMOS管NM2A的漏极连接电源电压VDD,其栅极通过第三电阻R1A后连接其漏极;The gate of the first NMOS transistor NM1A is used as the positive input terminal of the main buffer circuit and is connected to the gate of the third NMOS transistor NM2A after passing through the third capacitor C1A, and its drain is connected to the source of the third NMOS transistor NM2A, which The source is used as the positive output terminal of the main buffer circuit and grounded after passing through the first current source I1A; the drain of the third NMOS transistor NM2A is connected to the power supply voltage VDD, and its gate is connected to the drain after passing through the third resistor R1A;
第二NMOS管NM1B的栅极作为所述主缓冲电路的负向输入端并通过第四电容C1B后连接第四NMOS管NM2B的栅极,其漏极连接第四NMOS管NM2B的源极,其源极作为所述主缓冲电路的负向输出端并通过第二电流源I1B后接地;第四NMOS管NM2B的漏极连接电源电压VDD,其栅极通过第四电阻R1B后连接其漏极;The gate of the second NMOS transistor NM1B serves as the negative input terminal of the main buffer circuit and is connected to the gate of the fourth NMOS transistor NM2B after passing through the fourth capacitor C1B, and its drain is connected to the source of the fourth NMOS transistor NM2B, which The source serves as the negative output terminal of the main buffer circuit and is grounded after passing through the second current source I1B; the drain of the fourth NMOS transistor NM2B is connected to the power supply voltage VDD, and its gate is connected to the drain after passing through the fourth resistor R1B;
第一NMOS管NM1A、第二NMOS管NM1B、第三NMOS管NM2A和第四NMOS管NM2B均为深N阱器件。The first NMOS transistor NM1A, the second NMOS transistor NM1B, the third NMOS transistor NM2A and the fourth NMOS transistor NM2B are all deep N-well devices.
本发明的有益效果为:The beneficial effects of the present invention are:
1、主缓冲电路中采用开环源随器结构,源随器输出阻抗很小,带宽可以做得很大。1. The main buffer circuit adopts an open-loop source follower structure, the output impedance of the source follower is very small, and the bandwidth can be made large.
2、主缓冲电路输入端共模电平VCM由副缓冲(Replica Buffer)电路经共模反馈控制产生,副缓冲电路是主缓冲电路按比例复制生成,优选最小比例,副缓冲电路的静态工作点与主缓冲电路相同且工作在直流DC状态,反馈环路的稳定性可以得到保证,缓冲器输出共模电平VCM稳定。2. The common-mode level VCM at the input end of the main buffer circuit is generated by the common-mode feedback control of the replica buffer circuit. The replica buffer circuit is generated by replicating the main buffer circuit in proportion. The minimum ratio is preferred. The static operating point of the replica buffer circuit The same as the main buffer circuit and works in the DC state, the stability of the feedback loop can be guaranteed, and the buffer output common mode level VCM is stable.
3、主缓冲电路中通过源随器和电容,将输入信号耦合到源随器的漏端,避免了短沟道器件的沟道调制效应,提高输出信号线性度。3. In the main buffer circuit, the input signal is coupled to the drain of the source follower through the source follower and the capacitor, which avoids the channel modulation effect of the short channel device and improves the linearity of the output signal.
4、主缓冲电路和副缓冲电路中所用到的NMOS管均用深N阱器件,衬源短接,消除了衬底偏置效应的影响。4. The NMOS transistors used in the main buffer circuit and the auxiliary buffer circuit all use deep N-well devices, and the substrate source is shorted to eliminate the influence of the substrate bias effect.
附图说明Description of drawings
图1为本发明提出的一种超高频输入信号缓冲器的结构示意图。FIG. 1 is a schematic structural diagram of a UHF input signal buffer proposed by the present invention.
图2为实施例中输入信号为差分信号且应用于超高速ADC的结构框图。FIG. 2 is a structural block diagram of an embodiment in which the input signal is a differential signal and applied to an ultra-high-speed ADC.
图3为实施例中主缓冲电路、副缓冲电路和阻抗匹配电路的结构示意图。Fig. 3 is a schematic structural diagram of the main buffer circuit, the secondary buffer circuit and the impedance matching circuit in the embodiment.
图4为本发明提出的一种超高频输入信号缓冲器-3dB带宽仿真图。Fig. 4 is a simulation diagram of -3dB bandwidth of a UHF input signal buffer proposed by the present invention.
图5为本发明提出的一种超高频输入信号缓冲器的无杂散动态范围SFDR随输入信号频率Fin变化的仿真结果。FIG. 5 is a simulation result of the spurious-free dynamic range SFDR of a UHF input signal buffer proposed by the present invention changing with the frequency Fin of the input signal.
具体实施方式Detailed ways
下面结合附图和具体实施例详细描述本发明。The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.
本发明提出的一种超高频输入信号缓冲器,提供强大的输入信号驱动,可以驱动大的电容负载并提供高质量的输入信号。本发明采用源随器和电容,将输入信号耦合到源随器的漏端,避免了短沟道器件的沟道调制效应,提高输出信号线性度;主缓冲器采用开环源随器,具有单位增益和输出阻抗低等特点,达到高带宽的目的;源随器的输出共模随工艺角和温度的变化而变化,采用Replica共模反馈的方式为主缓冲器提供共模,实现缓冲器的输出共模的稳定。本发明可应用于超高速时间交织ADC的输入信号缓冲器。An ultra-high frequency input signal buffer proposed by the invention provides powerful input signal drive, can drive large capacitive loads and provides high-quality input signals. The invention uses a source follower and a capacitor to couple the input signal to the drain of the source follower, avoiding the channel modulation effect of the short-channel device and improving the linearity of the output signal; the main buffer adopts an open-loop source follower, which has The characteristics of unity gain and low output impedance achieve the purpose of high bandwidth; the output common mode of the source follower changes with the change of process angle and temperature, and the common mode of the main buffer is provided by the way of Replica common mode feedback to realize the buffer output common-mode stability. The invention can be applied to an input signal buffer of an ultra-high-speed time-interleaved ADC.
如图1所示为本发明提出的一种超高频输入信号缓冲器的结构示意图,包括主缓冲(Buffer)电路、副缓冲(Replica Buffer)电路、运算放大器电路、电容耦合电路和阻抗匹配电路,副缓冲电路由主缓冲电路复制生成,副缓冲电路的整体尺寸为主缓冲电路的整体尺寸按比例缩小;主缓冲电路的输入端通过电容耦合电路后连接输入信号,其输出端作为超高频输入信号缓冲器的输出端;运算放大器电路的正向输入端连接基准电压VREF,其负向输入端连接副缓冲电路的输出端,其输出端连接副缓冲电路的输入端并通过阻抗匹配电路后连接主缓冲电路的输入端,副缓冲电路为主缓冲电路提供共模电平VCM。As shown in Figure 1, it is a schematic structural diagram of a UHF input signal buffer proposed by the present invention, including a main buffer (Buffer) circuit, a secondary buffer (Replica Buffer) circuit, an operational amplifier circuit, a capacitive coupling circuit and an impedance matching circuit , the sub-buffer circuit is generated by duplicating the main buffer circuit, and the overall size of the sub-buffer circuit is reduced in proportion to the overall size of the main buffer circuit; the input terminal of the main buffer circuit is connected to the input signal after passing through the capacitive coupling circuit, and its output terminal is used as a UHF The output terminal of the input signal buffer; the positive input terminal of the operational amplifier circuit is connected to the reference voltage VREF, its negative input terminal is connected to the output terminal of the secondary buffer circuit, and its output terminal is connected to the input terminal of the secondary buffer circuit and passed through the impedance matching circuit. Connected to the input end of the main buffer circuit, the secondary buffer circuit provides the common mode level VCM to the main buffer circuit.
实施例中,副缓冲电路的整体尺寸为主缓冲电路的整体尺寸的最小比例,管子数目减少,使得功耗和芯片面积减小,达到最优效果。In the embodiment, the overall size of the secondary buffer circuit is the smallest ratio of the overall size of the main buffer circuit, and the number of tubes is reduced, so that the power consumption and chip area are reduced, achieving the optimal effect.
本发明还可以适用于输入信号为差分信号的情况,如图2所示,主缓冲电路和副缓冲电路为双端输入和双端输出,运算放大器电路包括第一运算放大器Amp1和第二运算放大器Amp2,电容耦合电路包括第一电容C1和第二电容C2,阻抗匹配电路包括第一电阻R1和第二电阻R2,差分信号分别通过第一电容C1和第二电容C2连接主缓冲电路的正向输入端(即VP节点)和负向输入端(即VN节点);第一电阻R1和第二电阻R2串联并接在主缓冲电路的正向输入端和负向输入端之间,其串联点连接副缓冲电路的正向输入端和负向输入端以及第一运算放大器Amp1和第二运算放大器Amp2的输出端;第一运算放大器Amp1和第二运算放大器的正向输入端连接基准电压VREF,它们的负向输入端分别连接副缓冲电路的正向输出端和负向输出端。The present invention can also be applicable to the situation that the input signal is a differential signal, as shown in Figure 2, the main buffer circuit and the secondary buffer circuit are double-ended input and double-ended output, and the operational amplifier circuit includes the first operational amplifier Amp1 and the second operational amplifier Amp2, the capacitive coupling circuit includes the first capacitor C1 and the second capacitor C2, the impedance matching circuit includes the first resistor R1 and the second resistor R2, and the differential signal is respectively connected to the positive side of the main buffer circuit through the first capacitor C1 and the second capacitor C2 Input terminal (ie VP node) and negative input terminal (ie VN node); the first resistor R1 and the second resistor R2 are connected in series between the positive input terminal and the negative input terminal of the main buffer circuit, the series connection point Connect the positive input terminal and the negative input terminal of the secondary buffer circuit and the output terminals of the first operational amplifier Amp1 and the second operational amplifier Amp2; the positive input terminals of the first operational amplifier Amp1 and the second operational amplifier are connected to the reference voltage VREF, Their negative input terminals are respectively connected to the positive output terminal and the negative output terminal of the secondary buffer circuit.
如图3为一些实施例中主缓冲电路、副缓冲电路和阻抗匹配电路的结构示意图,主缓冲电路包括第一NMOS管NM1A、第二NMOS管NM1B、第三NMOS管NM2A、第四NMOS管NM2B、第三电容C1A、第四电容C1B、第三电阻R1A、第四电阻R1B、第一电流源I1A和第二电流源I1B,第一NMOS管NM1A的栅极作为所述主缓冲电路的正向输入端并通过第三电容C1A后连接第三NMOS管NM2A的栅极,其漏极连接第三NMOS管NM2A的源极,其源极作为所述主缓冲电路的正向输出端并通过第一电流源I1A后接地;第三NMOS管NM2A的漏极连接电源电压VDD,其栅极通过第三电阻R1A后连接其漏极;第二NMOS管NM1B、第四NMOS管NM2B、第四电容C1B、第四电阻R1B和第二电流源I1B根据第一NMOS管NM1A、第三NMOS管NM2A、第三电容C1A、第三电阻R1A、第一电流源I1A镜像复制形成,第二NMOS管NM1B的栅极作为所述主缓冲电路的负向输入端并通过第四电容C1B后连接第四NMOS管NM2B的栅极,其漏极连接第四NMOS管NM2B的源极,其源极作为所述主缓冲电路的负向输出端并通过第二电流源I1B后接地;第四NMOS管NM2B的漏极连接电源电压VDD,其栅极通过第四电阻R1B后连接其漏极。Figure 3 is a schematic structural diagram of the main buffer circuit, the secondary buffer circuit and the impedance matching circuit in some embodiments, the main buffer circuit includes a first NMOS transistor NM1A, a second NMOS transistor NM1B, a third NMOS transistor NM2A, and a fourth NMOS transistor NM2B , the third capacitor C1A, the fourth capacitor C1B, the third resistor R1A, the fourth resistor R1B, the first current source I1A and the second current source I1B, the gate of the first NMOS transistor NM1A is used as the positive direction of the main buffer circuit The input terminal is connected to the gate of the third NMOS transistor NM2A after passing through the third capacitor C1A, and its drain is connected to the source of the third NMOS transistor NM2A, and its source is used as the positive output terminal of the main buffer circuit and passed through the first The current source I1A is then grounded; the drain of the third NMOS transistor NM2A is connected to the power supply voltage VDD, and its gate is connected to the drain after passing through the third resistor R1A; the second NMOS transistor NM1B, the fourth NMOS transistor NM2B, the fourth capacitor C1B, The fourth resistor R1B and the second current source I1B are formed by mirroring the first NMOS transistor NM1A, the third NMOS transistor NM2A, the third capacitor C1A, the third resistor R1A, and the first current source I1A, and the gate of the second NMOS transistor NM1B Serve as the negative input terminal of the main buffer circuit and connect to the gate of the fourth NMOS transistor NM2B after passing through the fourth capacitor C1B, its drain is connected to the source of the fourth NMOS transistor NM2B, and its source serves as the main buffer circuit The negative output end of the NMOS transistor NM2B is grounded after passing through the second current source I1B; the drain of the fourth NMOS transistor NM2B is connected to the power supply voltage VDD, and the gate thereof is connected to the drain after passing through the fourth resistor R1B.
副缓冲电路包括第五NMOS管NM3A、第六NMOS管NM3B、第七NMOS管NM4A、第八NMOS管NM4B、第五电容C2A、第六电容C2B、第五电阻R2A、第六电阻R2B、第三电流源I2A和第四电流源I2B,第五NMOS管NM3A的栅极作为副缓冲电路的正向输入端并通过第五电容C2A后连接第七NMOS管NM4A的栅极,其漏极连接第七NMOS管NM4A的源极,其源极作为副缓冲电路的正向输出端并通过第三电流源I2A后接地;第七NMOS管NM4A的漏极连接电源电压VDD,其栅极通过第五电阻R2A后连接其漏极;第六NMOS管NM3B的栅极作为副缓冲电路的负向输入端并通过第六电容C2B后连接第八NMOS管NM4B的栅极,其漏极连接第八NMOS管NM4B的源极,其源极作为副缓冲电路的负向输出端并通过第四电流源I2B后接地;第八NMOS管NM4B的漏极连接电源电压VDD,其栅极通过第六电阻R2B后连接其漏极。第一运算放大器Amp1的正向输入端连接基准电压VREF,其负向输入端连接第五NMOS管NM3A的源极,其输出端连接第五NMOS管NM3A的栅极;第二运算放大器Amp2的正向输入端连接基准电压VREF,其负向输入端连接第六NMOS管NM3B的源极,其输出端连接第六NMOS管NM3B的栅极,第一运算放大器Amp1和第二运算放大器Amp2的输出端分别通过阻抗匹配电路中的第一电阻R1和第二电阻R2后连接到主缓冲电路的正向输入端和负向输入端,为主缓冲电路提供共模偏置电压。The secondary buffer circuit includes fifth NMOS transistor NM3A, sixth NMOS transistor NM3B, seventh NMOS transistor NM4A, eighth NMOS transistor NM4B, fifth capacitor C2A, sixth capacitor C2B, fifth resistor R2A, sixth resistor R2B, third The current source I2A and the fourth current source I2B, the gate of the fifth NMOS transistor NM3A is used as the positive input terminal of the secondary buffer circuit and is connected to the gate of the seventh NMOS transistor NM4A after passing through the fifth capacitor C2A, and its drain is connected to the seventh NMOS transistor NM4A. The source of the NMOS transistor NM4A is used as the positive output terminal of the secondary buffer circuit and grounded after passing through the third current source I2A; the drain of the seventh NMOS transistor NM4A is connected to the power supply voltage VDD, and its gate passes through the fifth resistor R2A Then connect its drain; the gate of the sixth NMOS transistor NM3B is used as the negative input terminal of the secondary buffer circuit and is connected to the gate of the eighth NMOS transistor NM4B after passing through the sixth capacitor C2B, and its drain is connected to the gate of the eighth NMOS transistor NM4B The source, its source is used as the negative output terminal of the secondary buffer circuit and grounded after passing through the fourth current source I2B; the drain of the eighth NMOS transistor NM4B is connected to the power supply voltage VDD, and its gate is connected to its drain after passing through the sixth resistor R2B pole. The positive input end of the first operational amplifier Amp1 is connected to the reference voltage VREF, its negative input end is connected to the source electrode of the fifth NMOS transistor NM3A, and its output end is connected to the gate of the fifth NMOS transistor NM3A; the positive input end of the second operational amplifier Amp2 Connect the reference voltage VREF to the input terminal, its negative input terminal is connected to the source of the sixth NMOS transistor NM3B, its output terminal is connected to the gate of the sixth NMOS transistor NM3B, the output terminals of the first operational amplifier Amp1 and the second operational amplifier Amp2 The positive and negative input terminals of the main buffer circuit are respectively connected to the positive input terminal and the negative input terminal of the main buffer circuit through the first resistor R1 and the second resistor R2 in the impedance matching circuit to provide a common mode bias voltage for the main buffer circuit.
主缓冲电路中,第一NMOS管NM1A、第二NMOS管NM1B、第三NMOS管NM2A和第四NMOS管NM2B构成源随器的主要输入对管,副缓冲电路,第五NMOS管NM3A、第六NMOS管NM3B、第七NMOS管NM4A和第八NMOS管NM4B构成源随器的主要输入对管,为解决了传统源随器存在的非理想因素,主缓冲电路和副缓冲电路中的NMOS管均为深N阱器件,消除了衬底偏置效应的影响。主缓冲电路中采用开环源随器结构,源随器输出阻抗很小,带宽可以做得很大。In the main buffer circuit, the first NMOS transistor NM1A, the second NMOS transistor NM1B, the third NMOS transistor NM2A, and the fourth NMOS transistor NM2B constitute the main input pair of the source follower, the secondary buffer circuit, the fifth NMOS transistor NM3A, the sixth The NMOS transistor NM3B, the seventh NMOS transistor NM4A and the eighth NMOS transistor NM4B constitute the main input pair of the source follower. In order to solve the non-ideal factors of the traditional source follower, the NMOS transistors in the main buffer circuit and the auxiliary buffer circuit are both For deep N-well devices, the influence of substrate bias effect is eliminated. The main buffer circuit adopts an open-loop source follower structure, the output impedance of the source follower is very small, and the bandwidth can be made very large.
主缓冲电路中,通过第三电容C1A、第四电容C1B、第三NMOS管NM2A和第四NMOS管NM2B将输入信号耦合到节点N1A(即第三NMOS管NM2A的源端)和节点N1B(即第四NMOS管NM2B的源端),使得第一NMOS管NM1A漏源电压恒定不变,第三NMOS管NM1B的漏源电压也恒定不变,减小了沟调效应的影响,提高了线性度。In the main buffer circuit, the input signal is coupled to the node N1A (that is, the source end of the third NMOS transistor NM2A) and the node N1B (that is, the The source terminal of the fourth NMOS transistor NM2B), so that the drain-source voltage of the first NMOS transistor NM1A is constant, and the drain-source voltage of the third NMOS transistor NM1B is also constant, which reduces the influence of the channel modulation effect and improves the linearity .
为了克服输出共模随温度和工艺的变化,本发明提出了Replica Buffer共模反馈方式,即副缓冲电路,给主缓冲(Buffer)电路提供共模电压VCM,将主缓冲电路按比例复制得到副缓冲(Replica Buffer)电路用于共模反馈,那么主缓冲电路和副缓冲电路的静态工作点一致且副缓冲电路工作在直流DC状态,稳定性可以很好的得到满足,功耗也较低,通过共模反馈的使用,解决了因为工艺角和温度变化使得输出共模变化的问题,保证后续模数转化器中比较器能够正常工作。In order to overcome the change of the output common mode with temperature and process, the present invention proposes the Replica Buffer common mode feedback mode, that is, the secondary buffer circuit, which provides the common mode voltage VCM to the main buffer (Buffer) circuit, and replicates the main buffer circuit in proportion to obtain the secondary buffer circuit. The buffer (Replica Buffer) circuit is used for common-mode feedback, then the static operating points of the main buffer circuit and the secondary buffer circuit are the same, and the secondary buffer circuit works in the DC state, the stability can be well satisfied, and the power consumption is also low. Through the use of common-mode feedback, the problem of output common-mode changes due to process angle and temperature changes is solved, and the comparator in the subsequent analog-to-digital converter can work normally.
本实施例中将本发明提出的超高频输入信号缓冲器应用于超高速ADC,如图2所示,将第一电容C1和第二电容C2串联在超高速ADC芯片外部,将主缓冲电路、副缓冲电路、阻抗匹配电路和运算放大器电路集成在超高速ADC芯片内部;本实施例采用开环源随器结构,提高缓冲器带宽;开环结构的源随器输出共模会发生偏移,采用Replica共模反馈的方式为主缓冲器提供共模,实现缓冲器的输出共模的稳定;在主Buffer电路中,采用叠层源随器和电容,将输入信号耦合到源随器的漏端,避免了短沟道器件的沟调效应。源随器输入馆都采用深N阱器件,消除了衬底偏置效应。本电路中仅有MOS管、电容CAP和电阻R,工艺实现简单。本发明适用于半导体集成电路的输入信号缓冲结构,尤其是输入信号频率很高时,解决了增大输入信号驱动;提高输入信号线性度;提高开环输出共模电压稳定性等问题。本实施例的仿真结果如图4和图5所示,对于应用于超高速ADC的输入信号缓冲器,-3dB带宽为12GHz;在负载为1.5pF、输入信号频率为1.5GHz、输入信号峰峰值Vpp为800mV时,无杂散动态范围SFDR为75.91dB,适用于12bit超高速ADC设计要求。In this embodiment, the ultra-high-frequency input signal buffer proposed by the present invention is applied to an ultra-high-speed ADC. As shown in FIG. 2, the first capacitor C1 and the second capacitor C2 are connected in series outside the ultra-high-speed ADC chip, and the main buffer circuit , sub-buffer circuit, impedance matching circuit and operational amplifier circuit are integrated in the ultra-high-speed ADC chip; this embodiment adopts an open-loop source follower structure to improve the buffer bandwidth; the source follower output common mode of the open-loop structure will shift , the common mode of the main buffer is provided by the way of Replica common mode feedback to realize the stability of the output common mode of the buffer; in the main buffer circuit, the stacked source follower and capacitor are used to couple the input signal to the source follower The drain terminal avoids the channel modulation effect of short channel devices. The source-follower input halls all use deep N-well devices, which eliminates the substrate bias effect. There are only MOS transistors, capacitor CAP and resistor R in this circuit, and the process is simple to realize. The invention is suitable for the input signal buffer structure of the semiconductor integrated circuit, especially when the frequency of the input signal is very high, and solves the problems of increasing the drive of the input signal, improving the linearity of the input signal, and improving the stability of the open-loop output common-mode voltage. The simulation results of this embodiment are shown in Figure 4 and Figure 5, for the input signal buffer applied to the ultra-high speed ADC, the -3dB bandwidth is 12GHz; when the load is 1.5pF, the input signal frequency is 1.5GHz, When Vpp is 800mV, the spurious-free dynamic range SFDR is 75.91dB, which is suitable for 12bit ultra-high-speed ADC design requirements.
以上实例仅为本发明的优选例子而已,本发明的使用并不局限于该实例,凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。The above example is only a preferred example of the present invention, and the use of the present invention is not limited to this example. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention should be included in the present invention. within the scope of protection.
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