CN108170197A - A kind of high-precision high-order compensation band gap reference circuit - Google Patents
A kind of high-precision high-order compensation band gap reference circuit Download PDFInfo
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- CN108170197A CN108170197A CN201711373706.2A CN201711373706A CN108170197A CN 108170197 A CN108170197 A CN 108170197A CN 201711373706 A CN201711373706 A CN 201711373706A CN 108170197 A CN108170197 A CN 108170197A
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Classifications
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is DC
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
The invention discloses a kind of high-precision high-order compensation band gap reference circuits；Including resistance R2, R1 and two triodes there are one amplifier, by resistance R2, R1 and two triodes, there are one amplifiers to constitute single order benchmark nuclear structure, and size, the precision of compensation electric current and reference voltage are adjusted by resistance R3, R4, R5；The band gap reference of this secondary design uses high-order temperature compensated technology different from the past, it not only further reduced temperature coefficient, and employ novel benchmark nuclear structure, its voltage accuracy and resolution ratio is allow to accomplish very high so that it can apply in the high-precision adc in Internet of things system.
Description
Technical field
The present invention relates to IC design fields, are especially a kind of high-precision high-order compensation band gap reference circuit.
Background technology
Band-gap reference circuit is widely used in analog circuit, digital circuit and Digital Analog Hybrid Circuits, band-gap reference electricity
The precision of potential source plays a crucial role whole system with stability.Traditional band-gap reference circuit is due to usually adopting
With single order tc compensation, temperature coefficient is (20~100) * 10-6/ DEG C, it is difficult to obtain relatively low temperature coefficient.
Traditional single order band-gap reference circuit is generally divided into two major class：Voltage-mode benchmark and current-mode benchmark, it is substantially former
Reason is as follows：
Common bandgap voltage reference is by PTAT voltage (Proportional to Absolute Temperature
Voltage it) is formed with CTAT voltage (Complementary to Absolute TemperatureVoltage) two parts,
As shown in Figure 1.CTAT voltage can be obtained by BJT pipes, and PTAT voltage can be by being biased under different current densities
Two V of BJT pipesBEDifference realize.BJT pipe △ VBERelational expression is as follows：
With △ VBEDivided by resistance R can be obtained by a PTAT current source：
And the V of a BJT pipeBERelationship between absolute temperature T can use formula (3) to represent：
VG(Tr) it is bandgap voltage reference of the semi-conducting material under reference temperature；Q is the charge of an electronics；N is work
Skill constant；K is Boltzmann constant；T is absolute temperature；ICIt is collector current；VBE(Tr) it is the base stage under reference temperature
With emitter pressure difference.Last higher order term very little in formula (3), can ignore, this has just obtained required CTAT voltage.Cause
This, the output voltage of benchmark can be represented with formula (4)：
VBER=VBE+KΔVBE(4)
Due to CTAT voltage VBEWith negative temperature coefficient, and PTAT voltage △ VBEWith positive temperature coefficient, as long as therefore K
Selection is suitable, so that it may so that VBERTemperature coefficient be zero.
We have ignored V in above-mentioned analysisBEHigher order term, so this limits conventional first order band to a certain extent
The temperature coefficient of gap benchmark can not possibly accomplish it is very low, so in order to further reduce the temperature coefficient of reference voltage, present benefit
Technology is repaid generally using compensation methodes such as segmented compensation, second-order temperature compensation, to improve the stability of band gap reference.
The temperature coefficient of traditional single order band gap reference is generally higher, and stability is poor, and existing second-order temperature is mended
Although the technology of repaying can reduce temperature coefficient, precision, the resolution ratio of its reference voltage are generally poor, power supply rejection ratio PSRR
Also it is universal relatively low, and in the society of this current Internet of Things high speed development, many Transmission systems are to analog-digital converter (ADC)
Resolution requirement is higher and higher, and to realize a high-resolution ADC, it is necessary to which there are one high-precision a reference sources.
Invention content
Therefore, in order to solve above-mentioned deficiency, the present invention provides a kind of high-precision high-order compensation band gap benchmark electricity herein
Road；The band gap reference of this secondary design uses high-order temperature compensated technology different from the past, not only further reduced temperature
Coefficient, and novel benchmark nuclear structure is employed, its voltage accuracy and resolution ratio is allow to accomplish very high so that it can answer
In the high-precision adc in Internet of things system.
The invention is realized in this way a kind of high-precision high-order compensation band gap reference circuit of construction, including resistance R2,
There are one amplifiers for R1 and two triode, and single order is constituted there are one amplifier by resistance R2, R1 and two triodes
Benchmark nuclear structure, it is characterised in that：The high-order compensation band gap reference circuit further includes resistance R3, R4, R5, by resistance R3,
R4, R5 compensate size, the precision of electric current and reference voltage to adjust；
Corresponding compensating current generating circuit is；Compensating current generating circuit have triode Q1, Q2, Q3, Q4, Q5,
Q6, Q7, Q8, the electric current of this compensation is an order current, and the process specifically generated is as follows；
The structure of Q1, Q2, Q3, Q4 composition generates the electric current of a positive temperature coefficient：
VBE1+VBE4=VBE2+VBE3+I1R1 (5)
It is N to set the number that the number of Q1 and Q4 is 1, Q2 and Q3, is thus had：
2VBE1=2VBE2+I1R1 (6)
The electric current I of a positive temperature coefficient is obtained1, next also need to obtain the electric current of a negative temperature coefficient, scheme
In, wherein, such a electric current can be obtained by the combination of triode Q5 and resistance R2：
Because VBE5It is the voltage of a negative temperature coefficient, so I2It is the electric current of a negative temperature coefficient；The two positive temperature
It crosses later in A points by a series of current mirror mirror images with Negative temperature coefficient current, at this time I3For the sum of three electric currents；
Finally obtain the final reference voltage V through overcompensationREFEquation be：
ICTTo compensate electric current, wherein, by adjusting each related coefficient, we can eliminate single order item in equation and band refers to
Several higher order terms, last remaining part are：
Due under the reference temperature set, VG(Tr) it is certain value, so from the above equation, we can see that final reference voltage
The definite value temperature independent for one, and specific size and precision can be by adjusting R4And R5To adjust.
The invention has the advantages that：The present invention provides a kind of high-precision high-order compensation band gap reference circuit；With tradition
Single order compared with second order band-gap reference circuit, the design employs a kind of novel high-order temperature compensated technology, effectively disappears
In addition to the temperature higher order term in reference voltage, temperature coefficient is reduced, and compared with other high-order band-gap references, the design
Benchmark nuclear power line structure realize final reference voltage size and precision is adjustable, can apply in Internet of things system
In high precision, in high-resolution analog-digital converter.
Description of the drawings
Fig. 1 is band-gap reference principle schematic；
Fig. 2 is benchmark core electrical block diagram of the present invention；
Fig. 3 is compensating current generating circuit schematic diagram of the present invention；
Fig. 4 is present invention compensation current curve schematic diagram；
Fig. 5 is V of the present inventionBEMiddle temperature higher order term curve synoptic diagram.
Specific embodiment
Below in conjunction with attached drawing 1- Fig. 5, the present invention is described in detail, to the technical solution in the embodiment of the present invention into
Row clearly and completely describes, it is clear that described embodiment is only the reality of part of the embodiment of the present invention rather than whole
Apply example.Based on the embodiments of the present invention, those of ordinary skill in the art are obtained without making creative work
Every other embodiment, shall fall within the protection scope of the present invention.
The present invention provides a kind of high-precision high-order compensation band gap reference circuit herein by improving, as follows
It realizes；
The circuit structure of the present invention is as shown in Figure 2 and Figure 3；Wherein, nuclear power line structure on the basis of Fig. 2, by resistance R2, R1 and
Two triodes constitute traditional single order benchmark nuclear structure there are one amplifier, are then used for adjusting by resistance R3, R4, R5
Reorganize and bring up the size for repaying electric current and reference voltage, precision to full strength.
Wherein, Fig. 3 is compensating current generating circuit, and electric current of this compensation is an order current, the original specifically generated
Reason is as follows.
The structure of Q1, Q2, Q3, Q4 composition generates the electric current of a positive temperature coefficient：
VBE1+VBE4=VBE2+VBE3+I1R1 (5)
It is N that we, which can set the number that the number of Q1 and Q4 is 1, Q2 and Q3, is thus had：
2VBE1=2VBE2+I1R1 (6)
So we have just obtained the electric current I of a positive temperature coefficient1It is, following that we also need to obtain a negative temperature
The electric current of coefficient, the in the figure combination of Q5 and R2 can obtain such a electric current：
Because VBE5It is the voltage of a negative temperature coefficient, so I2It is the electric current of a negative temperature coefficient.The two positive temperature
It crosses later in A points by a series of current mirror mirror images with Negative temperature coefficient current, at this time I3For the sum of three electric currents, this three
A electric current is respectively the positive temperature coefficient electric current I obtained by mirror image4With a Negative temperature coefficient current I5, there are one three poles
The base current of pipe Q8, our very littles that can control of this base current, so can be ignored herein, such base
I in sheet3For the electric current of positive temperature coefficient and the sum of the electric current of a negative temperature coefficient, it is noted herein that this subzero temperature
The electric current of coefficient is the difference V of the base stage and emitter voltage by triodeBEIt generates, so per se with higher order term, but this
Higher order term very little can equally be ignored here.So we can control the size of two electric currents, make their single order Xiang Wen
Degree ingredient is cancelled out each other, and can be obtained by a temperature independent electric current I in this way3, M1Also just into a source follower,
The voltage of A points changes with B point voltage changes, and the voltage approximation of B points is constant here, so the voltage of A points is equally approximate
It is constant.
For a triode, base emitter voltage VBEIn the case of constant, collector current becomes with temperature
Exponentially function, specific curve are as shown in Figure 4 for the situation of change.And VBEIn temperature higher order term
Curve it is as shown in Figure 5, it can be seen that the situation of change of two curves is approximate consistent, so we can adjust
Related coefficient namely compensates electric current to offset V with this collector currentBEIn higher order term.
Finally we can obtain the final reference voltage V through overcompensation according to fig. 2REFEquation be：
ICTTo compensate electric current, wherein, by adjusting each related coefficient, we can eliminate single order item in equation and band refers to
Several higher order terms, last remaining part are：
Due under the reference temperature set, VG(Tr) it is certain value, so from the above equation, we can see that final reference voltage
The definite value temperature independent for one, and specific size and precision can be by adjusting R4And R5To adjust.
By above description, of the invention compared with traditional single order and second order band-gap reference circuit, the design employs one
The novel high-order temperature compensated technology of kind, has effectively eliminated the temperature higher order term in reference voltage, has reduced temperature coefficient,
And compared with other high-order band-gap references, the benchmark nuclear power line structure of the design realize final reference voltage size and
Precision is adjustable, can apply high-precision in Internet of things system, in high-resolution analog-digital converter.
The foregoing description of the disclosed embodiments enables professional and technical personnel in the field to realize or use the present invention.
A variety of modifications of these embodiments will be apparent for those skilled in the art, it is defined herein
General Principle can realize in other embodiments without departing from the spirit or scope of the present invention.Therefore, originally
Invention is not intended to be limited to the embodiments shown herein, and is to fit to special with principles disclosed herein and novelty
The consistent most wide range of point.
Claims (1)
1. a kind of high-precision high-order compensation band gap reference circuit, including resistance R2, R1 and two triodes, there are one amplify
Device constitutes single order benchmark nuclear structure by resistance R2, R1 and two triodes there are one amplifier, it is characterised in that：It is described
High-order compensation band gap reference circuit further includes resistance R3, R4, R5, and compensation electric current and benchmark electricity are adjusted by resistance R3, R4, R5
Size, the precision of pressure；
Corresponding compensating current generating circuit is；Compensating current generating circuit have triode Q1, Q2, Q3, Q4, Q5, Q6, Q7,
Q8, the electric current of this compensation is an order current, and the process specifically generated is as follows；
The structure of Q1, Q2, Q3, Q4 composition generates the electric current of a positive temperature coefficient：
VBE1+VBE4=VBE2+VBE3+I1R1 (5)
It is N to set the number that the number of Q1 and Q4 is 1, Q2 and Q3, is thus had：
2VBE1=2VBE2+I1R1 (6)
The electric current I of a positive temperature coefficient is obtained1, next also need to obtain the electric current of a negative temperature coefficient, in the figure its
In, such a electric current can be obtained by the combination of triode Q5 and resistance R2：
Because VBE5It is the voltage of a negative temperature coefficient, so I2It is the electric current of a negative temperature coefficient；The two just mild subzero temperatures
Coefficient current crosses by a series of current mirror mirror images in A points later, at this time I3For the sum of three electric currents；
Finally obtain the final reference voltage V through overcompensationREFEquation be：
ICTTo compensate electric current, wherein, by adjusting each related coefficient, we can eliminate single order item in equation and with index
Higher order term, last remaining part are：
Due under the reference temperature set, VG(Tr) it is certain value, so from the above equation, we can see that final reference voltage is one
Temperature independent definite value, and specific size and precision can be by adjusting R4And R5To adjust.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109491440A (en) * | 2018-12-26 | 2019-03-19 | 深圳南云微电子有限公司 | A kind of reference circuits |
| CN112034233A (en) * | 2020-08-31 | 2020-12-04 | 国网山东省电力公司电力科学研究院 | A high-precision alternating current testing device and method |
| CN112747830A (en) * | 2020-12-29 | 2021-05-04 | 广东高云半导体科技股份有限公司 | Temperature detection method and temperature sensing device |
| CN112947668A (en) * | 2021-05-13 | 2021-06-11 | 上海类比半导体技术有限公司 | Band-gap reference voltage generation circuit with high-order temperature compensation |
| CN113485512A (en) * | 2021-07-26 | 2021-10-08 | 大连理工大学 | Low-power-consumption improved band-gap reference temperature reading circuit |
| CN113721694A (en) * | 2021-08-05 | 2021-11-30 | 西安交通大学 | Self-compensating band gap reference source structure based on curvature function and application thereof |
| CN114237339A (en) * | 2021-12-01 | 2022-03-25 | 重庆吉芯科技有限公司 | Band-gap reference voltage circuit and compensation method of band-gap reference voltage |
| CN116466787A (en) * | 2023-04-14 | 2023-07-21 | 江苏润石科技有限公司 | High-precision band-gap reference circuit with adjustable output voltage |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112034233A (en) * | 2020-08-31 | 2020-12-04 | 国网山东省电力公司电力科学研究院 | A high-precision alternating current testing device and method |
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| CN112947668A (en) * | 2021-05-13 | 2021-06-11 | 上海类比半导体技术有限公司 | Band-gap reference voltage generation circuit with high-order temperature compensation |
| CN113485512A (en) * | 2021-07-26 | 2021-10-08 | 大连理工大学 | Low-power-consumption improved band-gap reference temperature reading circuit |
| CN113485512B (en) * | 2021-07-26 | 2022-03-25 | 大连理工大学 | Low-power-consumption improved band-gap reference temperature reading circuit |
| CN113721694A (en) * | 2021-08-05 | 2021-11-30 | 西安交通大学 | Self-compensating band gap reference source structure based on curvature function and application thereof |
| CN114237339A (en) * | 2021-12-01 | 2022-03-25 | 重庆吉芯科技有限公司 | Band-gap reference voltage circuit and compensation method of band-gap reference voltage |
| WO2023097857A1 (en) * | 2021-12-01 | 2023-06-08 | 重庆吉芯科技有限公司 | Bandgap reference voltage circuit and bandgap reference voltage compensation method |
| CN116466787A (en) * | 2023-04-14 | 2023-07-21 | 江苏润石科技有限公司 | High-precision band-gap reference circuit with adjustable output voltage |
| CN116466787B (en) * | 2023-04-14 | 2023-12-12 | 江苏润石科技有限公司 | High-precision band-gap reference circuit with adjustable output voltage |
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Application publication date: 20180615 |