CN107994026A - A kind of technique of the protective side wall in the etching of high-aspect-ratio raceway groove hole - Google Patents
A kind of technique of the protective side wall in the etching of high-aspect-ratio raceway groove hole Download PDFInfo
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- CN107994026A CN107994026A CN201711140438.XA CN201711140438A CN107994026A CN 107994026 A CN107994026 A CN 107994026A CN 201711140438 A CN201711140438 A CN 201711140438A CN 107994026 A CN107994026 A CN 107994026A
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- Prior art keywords
- raceway groove
- groove hole
- side wall
- protective film
- stacked structure
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
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- Non-Volatile Memory (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The technique of protective side wall, comprises the following steps in being etched the present invention provides a kind of high-aspect-ratio raceway groove hole：Substrate stacked structure is provided；Etching forms raceway groove hole on the substrate stacked structure；Filling is deposited in the raceway groove hole and forms raceway groove hole side wall stacked structure function film；Protective film is deposited on the surface of the side wall stacked structure, and make it that the thickness in thickness ratio raceway groove bottom hole portion of the protective film at the top of raceway groove hole is big.The thickness in thickness ratio raceway groove bottom hole portion of the present invention process due to protective film at the top of raceway groove hole is big；So that during follow-up dry etching; protective film of the protective film at top particularly at the upper opening of raceway groove hole is more resistant to damage; in the end of a period of dry etching; remain to the residue of protective film; so as to protect the stacked structure function film of raceway groove hole side wall from the bombardment damage of plasma; the yield of raceway groove hole etching technics processing procedure is improved, improves the electric property of device.
Description
Technical field
The present invention relates to improve raceway groove hole etching in field of semiconductor manufacture, more particularly to a kind of 3D NAND flash memory structures
The method of technique.
Background technology
With the development of plane flash memories, the production technology of semiconductor achieves huge progress.But recently
Several years, the development of plane flash memory encountered various challenges：Physics limit, the existing developing technique limit and storage electron density
Limit etc..In this context, to solve the difficulty that runs into of planar flash memory and most ask being produced into for lower unit storage unit
This, a variety of three-dimensional (3D) flash memories structures are come into being, such as 3D NOR (3D or non-) flash memories and 3D NAND
(3D with non-) flash memory.At present, in the evolution of 3D NAND, with the increase of stacking number, prepared to etching, depositing etc.
Technique proposes the requirement of higher.
Wherein, in the etching technics of high-aspect-ratio raceway groove hole, generally use is protected along the technique of side wall deposition protective film
Side wall, for example, in the manufacturing process of 3D NAND, in order to form raceway groove, after channel thin-film deposition, bottom source should be by
Etching is opened, so as to cause in the etching technics of this high-aspect-ratio, it is necessary to deposit some kinds of protective film to protect side
Wall.
In high aspect ratio technique, top protective film is easier the damage that is etched than bottom protective film；Such as showing for Fig. 1
Shown in micro- photo.For another example the schematic diagram of Fig. 2 a, it is shown that the raceway groove hole functional memory cell film 2 of stacked structure 1 deposits one above
Layer protective film 3, the schematic diagram after dry etching is as shown in Figure 2 b, it is seen then that protective film at the top-open of raceway groove hole by
Damage, functional memory cell film is exposed, and protective film above is more serious than following damage.Just due to this reason,
Plasma is by the function film of damaged memory unit, such as makes to produce room in function film, after this causes wet etching
Performance deteriorates, and may cause the failure of electrical property.
Therefore, the depositing operation of protective film how is improved, so that the raceway groove hole for preparing higher yield is this area skill always
Art personnel endeavour the direction of research.
The content of the invention
It is an object of the invention to provide a kind of technique of protective side wall in being etched in high-aspect-ratio raceway groove hole, by protecting
The improvement of cuticula depositing operation, overcomes the drawbacks described above of the prior art, so as to improve the technique of raceway groove hole etching；And then improve ditch
Road hole process rate.
To achieve these goals, the technical solution adopted by the present invention is as follows：
The technique of protective side wall, comprises the following steps in a kind of high-aspect-ratio raceway groove hole etching：
Substrate stacked structure is provided；
Etching forms raceway groove hole on the substrate stacked structure；
Filling is deposited in the raceway groove hole and forms raceway groove hole side wall stacked structure function film；
Protective film is deposited on the surface of the side wall stacked structure, and causes thickness of the protective film at the top of raceway groove hole
Thickness than raceway groove bottom hole portion is big.
Further, the transition gradual from the top to the bottom of the thickness of the protective film causes in raceway groove hole longitudinal cross-section one side
Protective film is in back taper.
Further, depositing operation is controlled so that the thickness of thickness of the protective film at the top of raceway groove hole to raceway groove bottom hole portion
Degree is of substantially equal in the thickness of the remaining protective film after dry etching.
Further, the substrate stacked structure includes the spaced silicon oxide-silicon nitride heap that substrate surface is formed
Laminate film (O/N) and hard mask (HM) above.
Further, the raceway groove hole side wall stacked structure function film is included as barrier layer, accumulation layer and tunnel layer
Oxidenitride oxide structure (ONO).
Compared with prior art, the beneficial effects are mainly as follows：
When depositing protective film, since the thickness in thickness ratio raceway groove bottom hole portion of the protective film at the top of raceway groove hole is big；So that
During follow-up dry etching, the protective film of the protective film at top particularly at the upper opening of raceway groove hole is more resistant to damage, in dry etching
End of a period, remain to the residue of protective film, thus protect the stacked structure function film of raceway groove hole side wall from plasma Hong
Damage is hit, improves the yield of raceway groove hole etching technics processing procedure, improves the electric property of device.
Brief description of the drawings
By reading the detailed description of hereafter preferred embodiment, it is various other the advantages of and benefit it is common for this area
Technical staff will be clear understanding.Attached drawing is only used for showing the purpose of preferred embodiment, and is not considered as to the present invention
Limitation.And in whole attached drawing, identical component is denoted by the same reference numerals.In the accompanying drawings：
Fig. 1, the microphoto for the damage that is etched for protective film of the display in the prior art at the top of raceway groove hole；
Fig. 2 a, to show the layer protecting film that deposits above of raceway groove hole functional memory cell film of prior art stacked structure
Structure diagram；
Fig. 2 b, to show that protective film of the protective film of the prior art after dry etching at the upper opening of raceway groove hole is etched
The structure diagram of damage；
Fig. 3 a, to show deposit above one layer of raceway groove hole functional memory cell film of embodiment of the present invention stacked structure
The structure diagram of protective film；
Fig. 3 b, to show protective film of the protective film of embodiment of the present invention after dry etching at the upper opening of raceway groove hole
Be not etched the structure diagram of damage.
Embodiment
The illustrative embodiments of the disclosure are more fully described below with reference to accompanying drawings.Although this public affairs is shown in attached drawing
The illustrative embodiments opened, it being understood, however, that may be realized in various forms the disclosure without the reality that should be illustrated here
The mode of applying is limited.Conversely, there is provided these embodiments are to be able to be best understood from the disclosure, and can be by this public affairs
The scope opened completely is communicated to those skilled in the art.
For clarity, whole features of practical embodiments are not described.In the following description, it is not described in detail known function
And structure, because they can make the present invention chaotic due to unnecessary details.It will be understood that opening in any practical embodiments
In hair, it is necessary to a large amount of implementation details are made to realize the specific objective of developer, such as according to related system or related business
Limitation, another embodiment is changed into by one embodiment.Additionally, it should think that this development is probably complicated and expends
Time, but it is only to those skilled in the art routine work.
More specifically description is of the invention by way of example referring to the drawings in the following passage.Will according to following explanation and right
Book is sought, advantages and features of the invention will become apparent from.It should be noted that attached drawing is using very simplified form and using non-
Accurately ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
According to the embodiment of the present invention, there is provided the technique of protective side wall in a kind of high-aspect-ratio raceway groove hole etching, including
Following steps：
S100, referring to Fig. 3 a, there is provided substrate stacked structure；The substrate stacked structure includes the mutual of substrate surface formation
Silicon oxide-silicon nitride stacked film (O/N) 100 spaced apart and hard mask (HM) 200 above；
S200, etching forms raceway groove hole 300 on the substrate stacked structure；
S300, in the raceway groove hole deposit filling form raceway groove hole side wall stacked structure function film 400；The raceway groove
Hole side wall stacked structure function film includes the oxidenitride oxide structure as barrier layer, accumulation layer and tunnel layer
(ONO)；
S400, protective film 500 is deposited on the surface of the side wall stacked structure, and the protective film is pushed up in raceway groove hole
The thickness in the thickness ratio raceway groove bottom hole portion in portion is big；The transition gradual from the top to the bottom of the thickness of the protective film causes in raceway groove hole
The protective film of longitudinal cross-section one side is in back taper, and controls depositing operation so that thickness of the protective film at the top of raceway groove hole
Spend to thickness of substantially equal, protection after dry etching in the thickness of the remaining protective film after dry etching in raceway groove bottom hole portion
The form of film is as shown in Figure 3b.
The foregoing is only a preferred embodiment of the present invention, but protection scope of the present invention be not limited thereto,
Any one skilled in the art the invention discloses technical scope in, the change or replacement that can readily occur in,
It should be covered by the protection scope of the present invention.Therefore, protection scope of the present invention should be with the protection model of the claim
Subject to enclosing.
Claims (5)
1. the technique of protective side wall in a kind of high-aspect-ratio raceway groove hole etching, it is characterised in that comprise the following steps：
Substrate stacked structure is provided；
Etching forms raceway groove hole on the substrate stacked structure；
Filling is deposited in the raceway groove hole and forms raceway groove hole side wall stacked structure function film；
Protective film is deposited on the surface of the side wall stacked structure, and causes thickness ratio ditch of the protective film at the top of raceway groove hole
The thickness in road bottom hole portion is big.
2. the technique of protective side wall as claimed in claim 1, it is characterised in that the thickness of the protective film is from the top to the bottom
Gradual transition make it that the protective film in raceway groove hole longitudinal cross-section one side is in back taper.
3. the technique of protective side wall as claimed in claim 1, it is characterised in that control depositing operation so that the protective film
Thickness of the thickness to raceway groove bottom hole portion at the top of raceway groove hole is of substantially equal in the thickness of the remaining protective film after dry etching.
4. the technique of the protective side wall as described in claim 1-3 any one, it is characterised in that the substrate stacked structure bag
Include the spaced silicon oxide-silicon nitride stacked film (O/N) of substrate surface formation and hard mask (HM) above.
5. the technique of the protective side wall as described in claim 1-3 any one, it is characterised in that raceway groove hole side wall stacks
Structure function film includes the oxidenitride oxide structure (ONO) as barrier layer, accumulation layer and tunnel layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711140438.XA CN107994026B (en) | 2017-11-16 | 2017-11-16 | Process for protecting side wall in etching high depth-to-width ratio trench hole |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711140438.XA CN107994026B (en) | 2017-11-16 | 2017-11-16 | Process for protecting side wall in etching high depth-to-width ratio trench hole |
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| CN107994026A true CN107994026A (en) | 2018-05-04 |
| CN107994026B CN107994026B (en) | 2020-07-10 |
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| CN201711140438.XA Active CN107994026B (en) | 2017-11-16 | 2017-11-16 | Process for protecting side wall in etching high depth-to-width ratio trench hole |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109524415A (en) * | 2018-11-14 | 2019-03-26 | 长江存储科技有限责任公司 | The manufacturing method and three-dimensional storage of three-dimensional storage |
| CN110808251A (en) * | 2019-11-12 | 2020-02-18 | 中国科学院微电子研究所 | A kind of channel preparation method of three-dimensional memory |
| WO2020061810A1 (en) * | 2018-09-26 | 2020-04-02 | Yangtze Memory Technologies Co., Ltd. | Step coverage improvement for memory channel layer in 3d nand memory |
| CN111769119A (en) * | 2020-06-08 | 2020-10-13 | 长江存储科技有限责任公司 | Memory manufacturing method and memory |
| CN113725228A (en) * | 2021-08-26 | 2021-11-30 | 长江存储科技有限责任公司 | Three-dimensional memory and manufacturing method thereof |
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| JPH1197414A (en) * | 1997-09-25 | 1999-04-09 | Sony Corp | Plasma etching method for silicon-oxide based insulating film |
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| JPH1197414A (en) * | 1997-09-25 | 1999-04-09 | Sony Corp | Plasma etching method for silicon-oxide based insulating film |
| CN1723549A (en) * | 2002-10-11 | 2006-01-18 | 兰姆研究有限公司 | Method for plasma etching performance enhancement |
| CN103972153A (en) * | 2013-01-31 | 2014-08-06 | 华邦电子股份有限公司 | Contact hole plug manufacture method |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020061810A1 (en) * | 2018-09-26 | 2020-04-02 | Yangtze Memory Technologies Co., Ltd. | Step coverage improvement for memory channel layer in 3d nand memory |
| US10707221B2 (en) | 2018-09-26 | 2020-07-07 | Yangtze Memory Technologies Co., Ltd. | Step coverage improvement for memory channel layer in 3D NAND memory |
| CN109524415A (en) * | 2018-11-14 | 2019-03-26 | 长江存储科技有限责任公司 | The manufacturing method and three-dimensional storage of three-dimensional storage |
| CN109524415B (en) * | 2018-11-14 | 2021-03-30 | 长江存储科技有限责任公司 | Manufacturing method of three-dimensional memory and three-dimensional memory |
| CN110808251A (en) * | 2019-11-12 | 2020-02-18 | 中国科学院微电子研究所 | A kind of channel preparation method of three-dimensional memory |
| CN111769119A (en) * | 2020-06-08 | 2020-10-13 | 长江存储科技有限责任公司 | Memory manufacturing method and memory |
| CN113725228A (en) * | 2021-08-26 | 2021-11-30 | 长江存储科技有限责任公司 | Three-dimensional memory and manufacturing method thereof |
| CN113725228B (en) * | 2021-08-26 | 2023-08-08 | 长江存储科技有限责任公司 | Three-dimensional memory and manufacturing method thereof |
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| Publication number | Publication date |
|---|---|
| CN107994026B (en) | 2020-07-10 |
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