[go: up one dir, main page]

CN107968060A - 用于晶圆刻蚀的反应槽 - Google Patents

用于晶圆刻蚀的反应槽 Download PDF

Info

Publication number
CN107968060A
CN107968060A CN201711166869.3A CN201711166869A CN107968060A CN 107968060 A CN107968060 A CN 107968060A CN 201711166869 A CN201711166869 A CN 201711166869A CN 107968060 A CN107968060 A CN 107968060A
Authority
CN
China
Prior art keywords
guide rod
lifting arm
wafer
reactive tank
wafer etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201711166869.3A
Other languages
English (en)
Other versions
CN107968060B (zh
Inventor
吴良辉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yangtze Memory Technologies Co Ltd
Original Assignee
Yangtze Memory Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yangtze Memory Technologies Co Ltd filed Critical Yangtze Memory Technologies Co Ltd
Priority to CN201711166869.3A priority Critical patent/CN107968060B/zh
Publication of CN107968060A publication Critical patent/CN107968060A/zh
Application granted granted Critical
Publication of CN107968060B publication Critical patent/CN107968060B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)

Abstract

本发明属于半导体技术领域，具体涉及一种用于晶圆刻蚀的反应槽。本发明所述的用于晶圆刻蚀的反应槽，其中包括槽体，所述槽体内设有升降臂、传动单元和导向单元，所述升降臂的内部为中空结构，所述传动单元设于所述升降臂的内部，所述传动单元的输入端与动力源相连，所述传动单元的输出端与所述导向单元的一端相连，所述导向单元的另一端穿过所述升降臂且能够与所述升降臂之间发生转动，所述导向单元穿过所述升降臂的所述另一端用于支撑晶圆并带动所述晶圆进行转动。通过使用本发明所述的用于晶圆刻蚀的反应槽，能够将刻蚀过程中的晶圆进行转动，有效地对晶圆表面进行均匀的刻蚀，提高晶圆表面质量。

Description

用于晶圆刻蚀的反应槽
技术领域
本发明属于半导体技术领域，具体涉及一种用于晶圆刻蚀的反应槽。
背景技术
现有技术中，在湿法工艺晶圆进行刻蚀时，需要将晶圆整体浸泡在晶圆刻蚀反应槽的内部，并固定于晶圆支架上。由于浸泡式清洗机酸槽内的酸液一直是从反应槽的底部进行供应，从反应槽的顶部进行溢出，而在这个过程中，酸液一直在跟晶圆上的膜起反应，所以酸槽顶部的局部浓度会低于酸槽底部的浓度，也就是说酸槽底部的酸液蚀刻率要比酸槽顶部的酸液蚀刻率高。在晶圆蚀刻过程时间较短的时候，晶圆表面的蚀刻不均匀性表现的不是很明显，但当长时间将晶圆浸泡在酸槽溶液中时，这种晶圆表面的蚀刻不均匀性便会凸显出来，具体表现为晶圆底部的蚀刻率高，晶圆顶部的蚀刻率低。
发明内容
本发明的目的是为了解决上述存在的至少一个问题，该目的是通过以下技术方案实现的。
本发明提出了一种用于晶圆刻蚀的反应槽，其中包括槽体，所述槽体内设有升降臂、传动单元和导向单元，所述升降臂的内部为中空结构，所述传动单元设于所述升降臂的内部，所述传动单元的输入端与动力源相连，所述传动单元的输出端与所述导向单元的一端相连，所述导向单元的另一端穿过所述升降臂且能够与所述升降臂之间发生转动，所述导向单元穿过所述升降臂的所述另一端用于支撑晶圆并带动所述晶圆进行转动。
进一步地，所述传动单元包括主动轮和从动轮，所述主动轮和所述从动轮之间通过皮带传动连接，所述主动轮与所述动力源相连，所述从动轮与所述导向单元的所述一端相连。
进一步地，所述主动轮的径向尺寸大于所述从动轮的径向尺寸。
进一步地，所述皮带的表面设有PFA防酸涂层。
进一步地，所述导向单元包括第一导向杆、第二导向杆和第三导向杆，所述第一导向杆的第一端与所述从动轮相连，所述第一导向杆的第二端穿过所述升降臂并能够与所述升降臂之间发生转动，所述第二导向杆和所述第三导向杆的第一端同样设于所述升降臂的内部并能够与所述升降臂之间发生转动，所述第二导向杆和所述第三导向杆的第二端穿过所述升降臂并能够支撑所述晶圆。
进一步地，所述第一导向杆、所述第二导向杆和所述第三导向杆之间设定为等腰三角形，所述第二导向杆和所述第三导向杆处于同一竖直高度且高于所述第一导向杆的高度。
进一步地，所述第一导向杆、所述第二导向杆和所述第三导向杆上均设有密封轴承，所述密封轴承固定连接于所述升降臂上。
进一步地，还包括通气管，所述通气管能够与所述升降臂的内部相通连接，并能够向所述升降臂的内部通入氮气。
进一步地，所述升降臂内通入氮气后的气压为1.1～1.5个标准大气压。
进一步地，所述第一导向杆、所述第二导向杆和所述第三导向杆的外圆周面上设有多个能够支撑所述晶圆的定位槽。
通过使用本发明所述的用于晶圆刻蚀的反应槽，能够将刻蚀过程中的晶圆进行转动，有效地对晶圆表面进行均匀的刻蚀，提高晶圆表面质量。
附图说明
通过阅读下文优选实施方式的详细描述，各种其他的优点和益处对于本领域普通技术人员将变得清楚明了。附图仅用于示出优选实施方式的目的，而并不认为是对本发明的限制。而且在整个附图中，用相同的参考符号表示相同的部件。在附图中：
图1为本发明实施例的内部结构的正面结构示意图；
图2为图1中实施例的内部结构的侧面结构剖视图；
图3为图1中实施例的升降臂的内部结构示意图。
附图中各标记表示如下：
100：槽体；
10：升降臂；
20：传动单元、21：主动轮、22：传动轮、23：皮带；
30：导向单元、31：第一导向杆、32：第二导向杆、33：第三导向杆；
40：密封轴承；
50：导向杆连接架。
具体实施方式
下面将参照附图更详细地描述本公开的示例性实施方式。虽然附图中显示了本公开的示例性实施方式，然而应当理解，可以以各种形式实现本公开而不应被这里阐述的实施方式所限制。相反，提供这些实施方式是为了能够更透彻地理解本公开，并且能够将本公开的范围完整的传达给本领域的技术人员。
图1为本发明实施例的内部结构的正面结构示意图。图2为图1中实施例的内部结构的侧面结构剖视图。图3为图1中实施例的升降臂的内部结构示意图。如图所示，本实施例中的用于晶圆刻蚀的反应槽，包括槽体100，槽体100内设有升降臂10、传动单元20和导向单元30，升降臂10的内部为中空结构，传动单元20设于升降臂10的内部，传动单元20的输入端与动力源相连，传动单元20的输出端与导向单元30的一端相连，导向单元30的另一端穿过升降臂10且能够与升降臂10之间发生转动，导向单元30穿过升降臂10的另一端用于支撑晶圆200并带动晶圆200进行转动。
如图2所示，传动单元20包括主动轮21和从动轮22。主动轮21和从动轮22之间通过皮带23传动连接，主动轮21与动力源相连，从动轮22与导向单元30的一端相连。
主动轮21与动力源的输出端相连，通过动力源带动主动轮21转动。主动轮21的转动通过皮带23传动带动从动轮22转动，从而带动导向单元30共同转动。
进一步地，根据晶圆200在酸槽过程中的刻蚀要求，需要调整导向单元30的转动速率。本实施例中，主动轮21的径向尺寸大于从动轮22的径向尺寸，从而将动力源的转速降低后传至导向单元30。导向单元30的转速应保证在晶圆200刻蚀过程中，导向单元30上的晶圆200至少能够转动一周。
进一步地，皮带23的表面设有PFA防酸涂层。
当导向单元30与升降臂10之间的密封效果变差，升降臂10内混入酸溶液时，为了防止酸液腐蚀皮带23，在皮带23的表面设有PFA防酸涂层，提高设备的使用安全性和可靠性。
如图3所示，本实施例中的导向单元30包括第一导向杆31、第二导向杆32和第三导向杆33。第一导向杆31的第一端与从动轮22相连，第一导向杆31的第二端穿过升降臂10并能够与升降臂10之间发生转动，第二导向杆32和第三导向杆33的第一端同样设于升降臂10的内部并能够与升降臂10之间发生转动，第二导向杆32和第三导向杆33的第二端穿过升降臂10并能够支撑晶圆200。
本实施例中，第一导向杆31、第二导向杆32和第三导向杆33的第一端均为图2中所示位置的左端，第一导向杆31、第二导向杆32和第三导向杆33的第二端均为图2中所示位置的右端。晶圆200能够被支撑于第一导向杆31、第二导向杆32和第三导向杆33之间，第一导向杆31随从动轮22进行转动，作为晶圆200转动的动力输出轴。当晶圆200转动时，由于晶圆200表面与第二导向杆32和第三导向杆33之间存在一定的摩擦力，且第二导向杆32和第三导向杆33能够与升降臂10之间发生转动，因此晶圆200转动的同时能够带动第二导向杆32和第三导向杆33共同转动。
进一步地，为了更好的完成对晶圆200的支撑和转动，第一导向杆31、第二导向杆32和第三导向杆33之间设定为等腰三角形。第二导向杆32和第三导向杆33处于同一竖直高度且高于第一导向杆31的高度。
将第一导向杆31、第二导向杆32和第三导向杆33之间设定为等腰三角形，第一导向杆31低于第二导向杆32和第三导向杆33，有利于晶圆200在转动过程中的受力均匀，使晶圆200表面的刻蚀更加均匀。
进一步地，由于第一导向杆31、第二导向杆32和第三导向杆33伸出升降臂10的部分过长，在转动过程中容易发生晃动。为了保证晶圆200刻蚀的均匀性和可靠性，第一导向杆31、第二导向杆32和第三导向杆33的第二端均联接于导向杆固定架50上。如图1所示，导向杆固定架50的顶部设有能够分别与第一导向杆31、第二导向杆32和第三导向杆33的第二端相互配合的轴承，第一导向杆31、第二导向杆32和第三导向杆33的第二端穿过该轴承，从而将第一导向杆31、第二导向杆32和第三导向杆33之间的相互位置进行固定，并能够实现第一导向杆31、第二导向杆32和第三导向杆33的转动。
如图2所示，本实施例中的第一导向杆31、第二导向杆32和第三导向杆22上均设有密封轴承40，密封轴承40固定连接于升降臂10上。
第一导向杆31、第二导向杆32和第三导向杆33穿过密封轴承40，从而完成第一导向杆31、第二导向杆32和第三导向杆33的顺利转动。
在本实施例中，由于第一导向杆31、第二导向杆32和第三导向杆33长期处于酸溶液中，为了提高设备的可靠性，在第一导向杆31、第二导向杆32和第三导向杆33的表面均涂有防腐蚀涂层。并且主动轮21、从动轮22以及密封轴承40上均涂有与第一导向杆31、第二导向杆32和第三导向杆32的表面一样的防腐蚀涂层。
进一步地，本实施例中的升降臂10上还设有通气管。通气管能够与升降臂10的内部相通连接，并能够将向升降臂10的内部通入氮气。
为了防止密封轴承40与升降臂10之间存在密封不足，造成酸溶液进入到升降臂10的内部腐蚀皮带23，通过通气管向升降臂10内部通入氮气。即使密封轴承40与升降臂10之间密封性较差，升降臂10内通入氮气后存在的气压也能够阻止酸溶液进入到升降臂10的内部，提高设备的可靠性。进一步地，本实施例中升降臂10内通入氮气后的气压为1.1～1.5个标准大气压。
进一步地，为了能够带动晶圆200的转动，第一导向杆31、第二导向杆32和第三导向杆33的外圆周面上设有多个能够固定支撑晶圆200的定位槽。定位槽的设置能够使第一导向杆31、第二导向杆32和第三导向杆33带动晶圆200进行转动，同时又能够防止每一个导向杆上的晶圆200之间发生窜动，影响晶圆200刻蚀的质量。
通过使用本发明所述的用于晶圆刻蚀的反应槽，能够将刻蚀过程中的晶圆进行转动，有效地对晶圆表面进行均匀的刻蚀，提高晶圆表面质量。
以上所述，仅为本发明较佳的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到的变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以所述权利要求的保护范围为准。

Claims (10)

1.一种用于晶圆刻蚀的反应槽，其特征在于，包括槽体，所述槽体内设有升降臂、传动单元和导向单元，所述升降臂的内部为中空结构，所述传动单元设于所述升降臂的内部，所述传动单元的输入端与动力源相连，所述传动单元的输出端与所述导向单元的一端相连，所述导向单元的另一端穿过所述升降臂且能够与所述升降臂之间发生转动，所述导向单元穿过所述升降臂的所述另一端用于支撑晶圆并带动所述晶圆进行转动。
2.根据权利要求1所述的用于晶圆刻蚀的反应槽，其特征在于，所述传动单元包括主动轮和从动轮，所述主动轮和所述从动轮之间通过皮带传动连接，所述主动轮与所述动力源相连，所述从动轮与所述导向单元的所述一端相连。
3.根据权利要求2所述的用于晶圆刻蚀的反应槽，其特征在于，所述主动轮的径向尺寸大于所述从动轮的径向尺寸。
4.根据权利要求2所述的用于晶圆刻蚀的反应槽，其特征在于，所述皮带的表面设有PFA防酸涂层。
5.根据权利要求2-4中任一项所述的用于晶圆刻蚀的反应槽，其特征在于，所述导向单元包括第一导向杆、第二导向杆和第三导向杆，所述第一导向杆的第一端与所述从动轮相连，所述第一导向杆的第二端穿过所述升降臂并能够与所述升降臂之间发生转动，所述第二导向杆和所述第三导向杆的第一端同样设于所述升降臂的内部并能够与所述升降臂之间发生转动，所述第二导向杆和所述第三导向杆的第二端穿过所述升降臂并能够支撑所述晶圆。
6.根据权利要求5所述的用于晶圆刻蚀的反应槽，其特征在于，所述第一导向杆、所述第二导向杆和所述第三导向杆之间设定为等腰三角形，所述第二导向杆和所述第三导向杆处于同一竖直高度且高于所述第一导向杆的高度。
7.根据权利要求6所述的用于晶圆刻蚀的反应槽，其特征在于，所述第一导向杆、所述第二导向杆和所述第三导向杆上均设有密封轴承，所述密封轴承固定连接于所述升降臂上。
8.根据权利要求5所述的用于晶圆刻蚀的反应槽，其特征在于，还包括通气管，所述通气管能够与所述升降臂的内部相通连接，并能够向所述升降臂的内部通入氮气。
9.根据权利要求8所述的用于晶圆刻蚀的反应槽，其特征在于，所述升降臂内通入氮气后的气压为1.1～1.5个标准大气压。
10.根据权利要求5所述的用于晶圆刻蚀的反应槽，其特征在于，所述第一导向杆、所述第二导向杆和所述第三导向杆的外圆周面上设有多个能够支撑所述晶圆的定位槽。
CN201711166869.3A 2017-11-21 2017-11-21 用于晶圆刻蚀的反应槽 Active CN107968060B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201711166869.3A CN107968060B (zh) 2017-11-21 2017-11-21 用于晶圆刻蚀的反应槽

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201711166869.3A CN107968060B (zh) 2017-11-21 2017-11-21 用于晶圆刻蚀的反应槽

Publications (2)

Publication Number Publication Date
CN107968060A true CN107968060A (zh) 2018-04-27
CN107968060B CN107968060B (zh) 2020-05-12

Family

ID=62001439

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201711166869.3A Active CN107968060B (zh) 2017-11-21 2017-11-21 用于晶圆刻蚀的反应槽

Country Status (1)

Country Link
CN (1) CN107968060B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110364421A (zh) * 2019-07-17 2019-10-22 武汉新芯集成电路制造有限公司 一种湿法刻蚀设备及湿法刻蚀方法
US20200006093A1 (en) * 2018-06-29 2020-01-02 Taiwan Semiconductor Manufacturing Co., Ltd. Wet bench structure
CN110931401A (zh) * 2020-01-02 2020-03-27 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） 晶圆片盒旋转装置及片盒旋转升降设备

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61214436A (ja) * 1985-03-20 1986-09-24 Toshiba Corp 半導体ウエハの食刻方法及び食刻装置
CN1191385A (zh) * 1997-02-21 1998-08-26 佳能株式会社 晶片处理装置、晶片处理方法和半导体衬底制备方法
EP0694957B1 (en) * 1994-07-29 2001-11-07 STMicroelectronics S.r.l. Method for wet processing of semiconductor wafers
US20030181042A1 (en) * 2002-03-19 2003-09-25 Taiwan Semiconductor Manufacturing Co., Ltd. Etching uniformity in wet bench tools
KR20050051292A (ko) * 2003-11-27 2005-06-01 주식회사 실트론 웨이퍼 세정장치 및 세정방법
KR20060078261A (ko) * 2004-12-31 2006-07-05 동부일렉트로닉스 주식회사 습식 식각 장치
WO2012005344A1 (ja) * 2010-07-08 2012-01-12 株式会社エクサ ウエハ分離装置、ウエハ分離搬送装置、ウエハ分離方法、ウエハ分離搬送方法及び太陽電池用ウエハ分離搬送方法
US20120175343A1 (en) * 2011-01-12 2012-07-12 Siltronic Corporation Apparatus and method for etching a wafer edge
CN103212551A (zh) * 2013-04-02 2013-07-24 苏州海铂晶体有限公司 一种用于晶片的超声波清洗装置
CN103219273A (zh) * 2013-03-14 2013-07-24 上海华力微电子有限公司 一种提湿法刻蚀承托装置和方法
CN203118916U (zh) * 2012-12-31 2013-08-07 上海新阳半导体材料股份有限公司 晶圆处理装置
CN204088282U (zh) * 2014-09-23 2015-01-07 浙江昊能光电有限公司 一种多晶硅片清洗机自动提篮装置
CN204361059U (zh) * 2014-12-23 2015-05-27 冠礼控制科技（上海）有限公司 硅片自旋转及振荡机构
CN105336649A (zh) * 2015-11-27 2016-02-17 上海广奕电子科技股份有限公司 一种晶圆腐蚀装置

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61214436A (ja) * 1985-03-20 1986-09-24 Toshiba Corp 半導体ウエハの食刻方法及び食刻装置
EP0694957B1 (en) * 1994-07-29 2001-11-07 STMicroelectronics S.r.l. Method for wet processing of semiconductor wafers
CN1191385A (zh) * 1997-02-21 1998-08-26 佳能株式会社 晶片处理装置、晶片处理方法和半导体衬底制备方法
US20030181042A1 (en) * 2002-03-19 2003-09-25 Taiwan Semiconductor Manufacturing Co., Ltd. Etching uniformity in wet bench tools
KR20050051292A (ko) * 2003-11-27 2005-06-01 주식회사 실트론 웨이퍼 세정장치 및 세정방법
KR20060078261A (ko) * 2004-12-31 2006-07-05 동부일렉트로닉스 주식회사 습식 식각 장치
WO2012005344A1 (ja) * 2010-07-08 2012-01-12 株式会社エクサ ウエハ分離装置、ウエハ分離搬送装置、ウエハ分離方法、ウエハ分離搬送方法及び太陽電池用ウエハ分離搬送方法
US20120175343A1 (en) * 2011-01-12 2012-07-12 Siltronic Corporation Apparatus and method for etching a wafer edge
CN203118916U (zh) * 2012-12-31 2013-08-07 上海新阳半导体材料股份有限公司 晶圆处理装置
CN103219273A (zh) * 2013-03-14 2013-07-24 上海华力微电子有限公司 一种提湿法刻蚀承托装置和方法
CN103212551A (zh) * 2013-04-02 2013-07-24 苏州海铂晶体有限公司 一种用于晶片的超声波清洗装置
CN204088282U (zh) * 2014-09-23 2015-01-07 浙江昊能光电有限公司 一种多晶硅片清洗机自动提篮装置
CN204361059U (zh) * 2014-12-23 2015-05-27 冠礼控制科技（上海）有限公司 硅片自旋转及振荡机构
CN105336649A (zh) * 2015-11-27 2016-02-17 上海广奕电子科技股份有限公司 一种晶圆腐蚀装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200006093A1 (en) * 2018-06-29 2020-01-02 Taiwan Semiconductor Manufacturing Co., Ltd. Wet bench structure
US11961745B2 (en) 2018-06-29 2024-04-16 Taiwan Semiconductor Manufacturing Co., Ltd. Wet bench structure
US12074041B2 (en) * 2018-06-29 2024-08-27 Taiwan Semiconductor Manufacturing Co., Ltd. Wet bench structure
CN110364421A (zh) * 2019-07-17 2019-10-22 武汉新芯集成电路制造有限公司 一种湿法刻蚀设备及湿法刻蚀方法
CN110364421B (zh) * 2019-07-17 2022-02-25 武汉新芯集成电路制造有限公司 一种湿法刻蚀设备及湿法刻蚀方法
CN110931401A (zh) * 2020-01-02 2020-03-27 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） 晶圆片盒旋转装置及片盒旋转升降设备
CN110931401B (zh) * 2020-01-02 2022-06-03 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） 晶圆片盒旋转装置及片盒旋转升降设备

Also Published As

Publication number Publication date
CN107968060B (zh) 2020-05-12

Similar Documents

Publication Publication Date Title
CN107968060A (zh) 用于晶圆刻蚀的反应槽
CN108325930B (zh) 一种升降式硅片清洗辅助装置及其清洗方法
JP2008198741A (ja) 基板処理方法および基板処理装置
CN109360801B (zh) 一种去除硅片边缘氧化膜的装置及方法
US10381233B2 (en) Method and apparatus for substrate processing
JP2000183010A (ja) 基板処理装置
US10699895B2 (en) Substrate processing method
CN107946229A (zh) 用于晶圆刻蚀的升降装置
US20160256901A1 (en) Substrate processing method and substrate processing apparatus
CN203360279U (zh) 基板减薄固定工具及基板减薄装置
CN103094171B (zh) 一种磁悬浮晶圆旋转系统
CN105401195B (zh) 一种复杂零件阳极化的夹持方法和夹持装置
JPH11145099A (ja) 基板処理装置
CN104723345A (zh) 一种应用于晶圆传输机器人的可翻转末端组件
TW202044512A (zh) 基板處理裝置以及基板處理方法
CN209319784U (zh) 一种六轴机器人关节用的传动装置
US20230096580A1 (en) Substrate processing apparatus
CN204204827U (zh) 一种湿法清洗槽的活动晶圆夹具
CN219793091U (zh) 一种用于真空物理气相沉积设备的防漏气旋转主轴
CN221108226U (zh) 一种粘胶纤维用黄化设备
CN105603503B (zh) 行星式转动溶液法晶体生长装置
US20230099910A1 (en) Substrate processing apparatus
CN221921868U (zh) 坩埚提升装置及单晶炉
CN210129495U (zh) 一种半导体晶圆传送装置
JP2004080054A (ja) 基板処理装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant